新式結構與高介電常數閘極介電層在複晶矽薄膜電晶體之應用(II)
| dc.contributor.author | 雷添福 | en_US |
| dc.contributor.author | LEI TAN-FU | en_US |
| dc.contributor.department | 國立交通大學電子工程學系及電子研究所 | zh_TW |
| dc.date.accessioned | 2014-12-13T10:48:43Z | |
| dc.date.available | 2014-12-13T10:48:43Z | |
| dc.date.issued | 2009 | en_US |
| dc.description.sponsorship | 行政院國家科學委員會 | zh_TW |
| dc.identifier.govdoc | NSC98-2221-E009-004 | zh_TW |
| dc.identifier.uri | https://www.grb.gov.tw/search/planDetail?id=1902016&docId=315104 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/101429 | |
| dc.language.iso | zh_TW | en_US |
| dc.title | 新式結構與高介電常數閘極介電層在複晶矽薄膜電晶體之應用(II) | zh_TW |
| dc.title | The Study of New Structure and High-K Gate Dielectric for Poly-Si TFTs Application(II) | en_US |
| dc.type | Plan | en_US |
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