Electron-beam Evaporation of Distinctive Indium-tin-oxide Nanorods for Enhanced Light Extraction from InGaN/GaN Light Emitting Diodes

Abstract

In this paper, we present a novel and mass-producible technique to fabricate indium-tin-oxide (ITO) nanorods arrays on InGaN/GaN light em itting diodes (LEDs) surface to be served as an omnidirectional transparent conductive layer. The characteristics nanorods, prepared by the electron-beam evaporation with an obliquely incident nitrogen flux on an ITO glass, demonstrate high optical tran smittance ( T>95%) for a broad wavelength ranging from 350 to 900 nm. The light output power of an InGaN/GaN LED with incorporated ITO nanorods increases by 35.1 % at an injection current of 350 mA, compared to a conventional LED. The higher efficiency is attributed to the better transmission and gradient refractive index resulted from the fabricated ITO nanorod on the surface.