Observation of a dominant EL2-like mid-gap trap in In0.12Ga0.88As/GaAs superlattice grown at low temperature by molecular beam epitaxy
| dc.citation.epage | 6422 | en_US |
| dc.citation.issue | 11 | en_US |
| dc.citation.spage | 6421 | en_US |
| dc.citation.volume | 38 | en_US |
| dc.citation.woscount | 0 | |
| dc.contributor.author | Chen, JF | en_US |
| dc.contributor.author | Wang, PY | en_US |
| dc.contributor.author | Wang, JS | en_US |
| dc.contributor.author | Wong, HZ | en_US |
| dc.contributor.department | 電子物理學系 | zh_TW |
| dc.contributor.department | Department of Electrophysics | en_US |
| dc.date.accessioned | 2014-12-08T15:46:07Z | |
| dc.date.available | 2014-12-08T15:46:07Z | |
| dc.date.issued | 1999-11-01 | en_US |
| dc.description.abstract | Admittance spectroscopy is used to study a low-temperature (LT)-grown relaxed In0.12Ga0.88As/GaAs p-i-n superlattice. The capacitance-frequency spectra show two step-like trapping effects which are explained by the existence of two traps (E-a = 0.73 eV, sigma = 4.6 x 10(-11) cm(2) and E-a = 0.75 eV, sigma = 3.7 x 10(-15) cm(2)) in the LT-grown superlattice region. These two traps are the dominating defects observed in deep-level transient spectroscopy with one being a majority trap and the other being a minority trap. The emission parameters and photo-capacitance quenching effect for the 0.75 eV trap agree with those known for EL2 defects, suggesting that the EL2 defect is strongly enhanced in InGaAs/GaAs by LT growth. | en_US |
| dc.identifier.issn | 0021-4922 | en_US |
| dc.identifier.journal | JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/31014 | |
| dc.identifier.wosnumber | WOS:000084041800047 | |
| dc.language.iso | en_US | en_US |
| dc.subject | In0.12Ga0.88As/GaAs superlattice | en_US |
| dc.subject | low-temperature MBE growth | en_US |
| dc.subject | deep levels | en_US |
| dc.title | Observation of a dominant EL2-like mid-gap trap in In0.12Ga0.88As/GaAs superlattice grown at low temperature by molecular beam epitaxy | en_US |
| dc.type | Article | en_US |