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Optical characterization of ZnMnO thin films on c-Al2O3

dc.citation.epage101en_US
dc.citation.issue1en_US
dc.citation.spage98en_US
dc.citation.volume53en_US
dc.contributor.authorLin, H. J.en_US
dc.contributor.authorLin, D. Y.en_US
dc.contributor.authorWu, J. S.en_US
dc.contributor.authorChou, W. C.en_US
dc.contributor.authorYang, C. S.en_US
dc.contributor.authorWang, J. S.en_US
dc.contributor.authorLo, W. H.en_US
dc.contributor.department電子物理學系zh_TW
dc.contributor.departmentDepartment of Electrophysicsen_US
dc.date.accessioned2014-12-08T15:43:11Z
dc.date.available2014-12-08T15:43:11Z
dc.date.issued2008-07-01en_US
dc.description.abstractVarious optical measurement technologies have been used to characterize ZnMnO thin films with different Mn compositions grown by molecular beam epitaxy (MBE) on c-Al2O3 substrates. The lattice constant and the crystalization quality have been evaluated by using X-ray diffraction (XRD). Photoluminescence (PL) has been used to reveal the neutral-donor-bound exciton ((DX)-X-0) and to check the film's quality. Defect-related absorption signatures, in addition to near-band-edge absorption, due to the zinc vacancy and the donor-acceptor pair (DAP) have been found in the surface photovoltage spectra (SPS). Free excitonic transitions and their phonon-assisted replicas have been observed in the reflectance spectra. Our experimental results not only unveil specific optical transition energies but also indicate a rapid material deterioration when Mn incorporation goes beyond a certain amount to cause manganese segregation.en_US
dc.identifier.issn0374-4884en_US
dc.identifier.journalJOURNAL OF THE KOREAN PHYSICAL SOCIETYen_US
dc.identifier.urihttps://ir.lib.nycu.edu.tw/handle/11536/29231
dc.identifier.wosnumberWOS:000257664700020
dc.language.isoen_USen_US
dc.subjectZnMnOen_US
dc.subjectX-ray diffractionen_US
dc.subjectphotoluminescenceen_US
dc.subjectreflectanceen_US
dc.titleOptical characterization of ZnMnO thin films on c-Al2O3en_US
dc.typeArticle; Proceedings Paperen_US

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