A Fully Integrated Ultra-Low Insertion Loss T/R Switch for 802.11b/g/n Application in 90 nm CMOS Process
| dc.citation.epage | 1360 | en_US |
| dc.citation.issue | 5 | en_US |
| dc.citation.spage | 1352 | en_US |
| dc.citation.volume | 44 | en_US |
| dc.contributor.author | Kidwai, Adil A. | en_US |
| dc.contributor.author | Fu, Chang-Tsung | en_US |
| dc.contributor.author | Jensen, Jonathan C. | en_US |
| dc.contributor.author | Taylor, Stewart S. | en_US |
| dc.contributor.department | 交大名義發表 | zh_TW |
| dc.contributor.department | National Chiao Tung University | en_US |
| dc.date.accessioned | 2014-12-08T15:40:33Z | |
| dc.date.available | 2014-12-08T15:40:33Z | |
| dc.date.issued | 2009-05-01 | en_US |
| dc.description.abstract | A 30 dBm ultra-low insertion loss CMOS transmit-receive switch fully integrated with an 802.11b/g/n transceiver front-end is demonstrated. The switch achieves an insertion loss of 0.4 dB in transmit mode and 0.1 dB in receive mode. The entire receiver chain from antenna to baseband output achieves a measured noise figure of 3.6 dB at 2.4 GHz. The switch has a P(1dB) greater than 30 dBm by employing a substrate isolation technique without using deep n-well technology. The switch employs a 1.2 V supply and occupies 0.02 mm(2) of die area. | en_US |
| dc.identifier.doi | 10.1109/JSSC.2009.2015813 | en_US |
| dc.identifier.issn | 0018-9200 | en_US |
| dc.identifier.journal | IEEE JOURNAL OF SOLID-STATE CIRCUITS | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1109/JSSC.2009.2015813 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/27676 | |
| dc.identifier.wosnumber | WOS:000265936600004 | |
| dc.language.iso | en_US | en_US |
| dc.subject | CMOS | en_US |
| dc.subject | T/R switch | en_US |
| dc.subject | transceiver | en_US |
| dc.subject | wireless LAN | en_US |
| dc.title | A Fully Integrated Ultra-Low Insertion Loss T/R Switch for 802.11b/g/n Application in 90 nm CMOS Process | en_US |
| dc.type | Article; Proceedings Paper | en_US |