高頻功率氮化銦鋁/氮化鎵高電子遷移率電晶體技術開發與研究
| dc.contributor.author | 張翼 | zh_TW |
| dc.contributor.author | CHANG EDWARD YI | en_US |
| dc.contributor.department | 國立交通大學材料科學與工程學系（所） | zh_TW |
| dc.date.accessioned | 2016-03-29T00:01:08Z | |
| dc.date.available | 2016-03-29T00:01:08Z | |
| dc.date.issued | 2016 | en_US |
| dc.description.sponsorship | 科技部 | zh_TW |
| dc.identifier.govdoc | MOST104-2221-E009-055-MY2 | zh_TW |
| dc.identifier.uri | https://www.grb.gov.tw/search/planDetail?id=11712966&docId=477315 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/130823 | |
| dc.language.iso | zh_TW | en_US |
| dc.title | 高頻功率氮化銦鋁/氮化鎵高電子遷移率電晶體技術開發與研究 | zh_TW |
| dc.title | Development of InAlN/GaN Hemt for High Power and High Frequency Applications | en_US |
| dc.type | Plan | en_US |
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