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Photoluminescence From InN Nanorod Arrays with a Critical Size

dc.citation.woscount0en_US
dc.contributor.authorChang, K. -Y.en_US
dc.contributor.authorLiu, Y. -S.en_US
dc.contributor.authorGwo, S.en_US
dc.contributor.authorAhn, H.en_US
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentDepartment of Photonicsen_US
dc.date.accessioned2019-04-02T06:04:21Z
dc.date.available2019-04-02T06:04:21Z
dc.date.issued2013-01-01en_US
dc.description.abstractAbnormal temperature dependence of peak energy and bandwidth of photoluminescence spectra was observed for InN nanorods with a diameter <30 nm, which is of the same order of the thickness of surface electron accumulation layer.en_US
dc.identifier.journal2013 CONFERENCE ON LASERS AND ELECTRO-OPTICS PACIFIC RIM (CLEO-PR)en_US
dc.identifier.urihttps://ir.lib.nycu.edu.tw/handle/11536/150631
dc.identifier.wosnumberWOS:000334176100470en_US
dc.language.isoen_USen_US
dc.titlePhotoluminescence From InN Nanorod Arrays with a Critical Sizeen_US
dc.typeProceedings Paperen_US

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