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電子所連德軒教授開拓超薄層半導體閾值電壓調變新技術

dc.citation.issue59期en_US
dc.contributor.author秘書處zh_TW
dc.date.accessioned2023-10-17T23:24:20Z
dc.date.available2023-10-17T23:24:20Z
dc.date.issued2023-10-16en_US
dc.description.abstract電子研究所連德軒教授研究團隊與台積電共同成功克服超薄層半導體中閾值電壓(VT)調變的技術挑戰,引入光熱合併方法,並結合紫外...zh_TW
dc.identifier.journal陽明交大電子報zh_TW
dc.identifier.journalNYCU E-NEWSen_US
dc.identifier.urihttps://enews.nycu.edu.tw/w/nycuenews059/focus_23101119474202425en_US
dc.identifier.urihttps://ir.lib.nycu.edu.tw/handle/11536/161706
dc.language.isozh_TWen_US
dc.publisher國立陽明交通大學zh_TW
dc.publisherNational Yang Ming Chiao Tung Universityen_US
dc.title電子所連德軒教授開拓超薄層半導體閾值電壓調變新技術zh_TW
dc.typeHistorical Newsen_US

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