Contact resistance reduction on layered MoS2 by Ar plasma pre-treatment
| dc.citation.epage | 53 | en_US |
| dc.citation.spage | 52 | en_US |
| dc.citation.woscount | 0 | en_US |
| dc.contributor.author | Ho, Yen-Teng | en_US |
| dc.contributor.author | Chu, Yung-Ching | en_US |
| dc.contributor.author | Jong, Chao An | en_US |
| dc.contributor.author | Chen, Hung-Yi | en_US |
| dc.contributor.author | Lin, Meng-Wei | en_US |
| dc.contributor.author | Zhang, Ming | en_US |
| dc.contributor.author | Chien, Po-Yen | en_US |
| dc.contributor.author | Tu, Yung-Yi | en_US |
| dc.contributor.author | Woo, Jason | en_US |
| dc.contributor.author | Chang, Edward Yi | en_US |
| dc.contributor.department | 材料科學與工程學系 | zh_TW |
| dc.contributor.department | Department of Materials Science and Engineering | en_US |
| dc.date.accessioned | 2017-04-21T06:48:46Z | |
| dc.date.available | 2017-04-21T06:48:46Z | |
| dc.date.issued | 2016 | en_US |
| dc.description.abstract | The effect of resistance (Rc) reduction of Ti/Au contact on MoS2 by ICP Ar plasma pretreatment is presented. The lowest Rc of 1.72 ohm-cm was achieved with the ICP treatment condition of 50W (ICP) /2W (chuck) for 10 sec. Compared with the contact without treatment (19.6 ohm-cm), the Rc improves over 10 times, demonstrating the advantage of Ar plasma pre-treatment on MoS2 contact. | en_US |
| dc.identifier.isbn | 978-1-5090-0726-4 | en_US |
| dc.identifier.journal | 2016 IEEE SILICON NANOELECTRONICS WORKSHOP (SNW) | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/134673 | |
| dc.identifier.wosnumber | WOS:000391250500022 | en_US |
| dc.language.iso | en_US | en_US |
| dc.title | Contact resistance reduction on layered MoS2 by Ar plasma pre-treatment | en_US |
| dc.type | Proceedings Paper | en_US |
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