Characteristics of 4H-SiC RF MOSFETs on a Semi-insulating Substrate
| dc.citation.epage | 173 | en_US |
| dc.citation.issue | 6 | en_US |
| dc.citation.volume | 35 | en_US |
| dc.contributor.author | Wu, Tian-Li | en_US |
| dc.contributor.author | Huang, Chih-Fang | en_US |
| dc.contributor.author | Cheng, Chun-Hu | en_US |
| dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
| dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
| dc.date.accessioned | 2014-12-08T15:23:24Z | |
| dc.date.available | 2014-12-08T15:23:24Z | |
| dc.date.issued | 2011 | en_US |
| dc.description.abstract | This study has provided considerable insight into the impact of device down scaling on the characteristics of RF devices. This type of RF devices, featuring a thin p-layer based on a semi-insulating substrate, is free from the unwanted parasitic effects resulting from traditional conducting substrates. We fabricated 4H-SiC RF MOSFETs with f(T)/f(MAX) of 0.7/1.5 GHz and, in so doing, identified the key issues associated with short channel effects, influencing device mobility and the RF characteristics of RF MOSFETs on a semi-insulating substrate. | en_US |
| dc.identifier.isbn | 978-1-60768-217-2 | en_US |
| dc.identifier.issn | 1938-5862 | en_US |
| dc.identifier.journal | WIDE BANDGAP SEMICONDUCTOR MATERIALS AND DEVICES 12 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/16395 | |
| dc.identifier.wosnumber | WOS:000305936300020 | |
| dc.language.iso | en_US | en_US |
| dc.title | Characteristics of 4H-SiC RF MOSFETs on a Semi-insulating Substrate | en_US |
| dc.type | Proceedings Paper | en_US |