The impact of inner pickup on ESD robustness of multi-finger NMOS in nanoscale CMOS technology
| dc.citation.epage | 632 | en_US |
| dc.citation.spage | 631 | en_US |
| dc.contributor.author | Ker, Ming-Dou | en_US |
| dc.contributor.author | Hsu, Hsin-Chyh | en_US |
| dc.contributor.department | 電機學院 | zh_TW |
| dc.contributor.department | College of Electrical and Computer Engineering | en_US |
| dc.date.accessioned | 2014-12-08T15:24:49Z | |
| dc.date.available | 2014-12-08T15:24:49Z | |
| dc.date.issued | 2006 | en_US |
| dc.description.abstract | The impact of pickup structure on ESD robustness of multi-finger MOSFET devices in the nanoscale CMOS process is investigated in this work with 1.2-V and 2.5-V devices in a 130-nm CMOS process. The multi-finger MOSFET device without the pickup structure inserted into its source region can sustain a much higher ESD level and more compact layout area for I/O cells. | en_US |
| dc.identifier.isbn | 0-7803-9498-4 | en_US |
| dc.identifier.journal | 2006 IEEE International Reliability Physics Symposium Proceedings - 44th Annual | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/17253 | |
| dc.identifier.wosnumber | WOS:000240855800112 | |
| dc.language.iso | en_US | en_US |
| dc.subject | electrostatic discharge (ESD) | en_US |
| dc.subject | multi-finger MOSFET | en_US |
| dc.subject | layout | en_US |
| dc.subject | pickup structure | en_US |
| dc.title | The impact of inner pickup on ESD robustness of multi-finger NMOS in nanoscale CMOS technology | en_US |
| dc.type | Proceedings Paper | en_US |