Improvement of high speed performance for 10-Gb/s 850-nm VCSELs using InGaAsP/InGaP strain-compensated MQWs
| dc.citation.epage | 226 | en_US |
| dc.citation.spage | 221 | en_US |
| dc.citation.volume | 5364 | en_US |
| dc.contributor.author | Chang, YS | en_US |
| dc.contributor.author | Kuo, HC | en_US |
| dc.contributor.author | Lai, FI | en_US |
| dc.contributor.author | Chang, YA | en_US |
| dc.contributor.author | Laih, LH | en_US |
| dc.contributor.author | Wang, SC | en_US |
| dc.contributor.department | 光電工程學系 | zh_TW |
| dc.contributor.department | Department of Photonics | en_US |
| dc.date.accessioned | 2014-12-08T15:25:45Z | |
| dc.date.available | 2014-12-08T15:25:45Z | |
| dc.date.issued | 2004 | en_US |
| dc.description.abstract | We present in this paper the MOCVD growth and characterization of high performance 850nm InGaAsP/InGaP strain-compensated MQWs vertical-cavity surface-emitting lasers (VCSELs). These VCSELs exhibit superior characteristics, with threshold currents similar to0.4 mA, and slope efficiencies similar to 0.6 mW/mA. The threshold current change is less than 0.2 mA and the slope efficiency drops by less than similar to30% when the substrate temperature is raised from room temperature to 85degreesC. These VCSELs also demonstrate high speed modulation bandwidth up to 12.5Gbit/s from 25degreesC to 85degreesC. | en_US |
| dc.identifier.doi | 10.1117/12.530055 | en_US |
| dc.identifier.isbn | 0-8194-5272-6 | en_US |
| dc.identifier.issn | 0277-786X | en_US |
| dc.identifier.journal | VERTICAL-CAVITY SURFACE-EMITTING LASERS VIII | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1117/12.530055 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/18178 | |
| dc.identifier.wosnumber | WOS:000222822200025 | |
| dc.language.iso | en_US | en_US |
| dc.subject | MOCVD | en_US |
| dc.subject | InGaAsP | en_US |
| dc.subject | VCSELs | en_US |
| dc.subject | strain-compensated | en_US |
| dc.subject | high speed | en_US |
| dc.title | Improvement of high speed performance for 10-Gb/s 850-nm VCSELs using InGaAsP/InGaP strain-compensated MQWs | en_US |
| dc.type | Proceedings Paper | en_US |