Flexible non-volatile memory
| dc.citation.patentcountry | USA | zh_TW |
| dc.citation.patentnumber | 08673727 | zh_TW |
| dc.contributor.author | Liu Po-Tsun | en_US |
| dc.contributor.author | Fan Yang-Shun | en_US |
| dc.date.accessioned | 2014-12-16T06:13:53Z | |
| dc.date.available | 2014-12-16T06:13:53Z | |
| dc.date.issued | 2014-03-18 | en_US |
| dc.description.abstract | A manufacturing method for manufacturing a flexible non-volatile memory is provided. The manufacturing method comprises the steps outlined below. A flexible substrate is provided. A planarization layer is formed on the flexible substrate. A metal bottom electrode layer is deposited on the planarization layer. A mask is formed to define a plurality of patterns. An AZTO layer having a plurality of electrically independent AZTO cells is deposited on the metal bottom electrode layer corresponding to the patterns. A top electrode layer is deposited on the AZTO layer corresponding to the AZTO cells to form a plurality of non-volatile memory cells. | zh_TW |
| dc.identifier.govdoc | H01L021/20 | zh_TW |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/104401 | |
| dc.language.iso | zh_TW | en_US |
| dc.title | Flexible non-volatile memory | zh_TW |
| dc.type | Patents | en_US |