金屬閘極金氧半場效電晶體關鍵技術(II)
| dc.contributor.author | 崔秉鉞 | en_US |
| dc.contributor.author | Bing-YueTsui | en_US |
| dc.contributor.department | 交通大學電子工程系 | zh_TW |
| dc.date.accessioned | 2014-12-13T10:34:34Z | |
| dc.date.available | 2014-12-13T10:34:34Z | |
| dc.date.issued | 2002 | en_US |
| dc.description.sponsorship | 行政院國家科學委員會 | zh_TW |
| dc.identifier.govdoc | NSC91-2215-E009-018 | zh_TW |
| dc.identifier.uri | https://www.grb.gov.tw/search/planDetail?id=736722&docId=139408 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/92843 | |
| dc.language.iso | zh_TW | en_US |
| dc.title | 金屬閘極金氧半場效電晶體關鍵技術(II) | zh_TW |
| dc.title | Key Technologies of Metal Gate MOSFET (II) | en_US |
| dc.type | Plan | en_US |