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The Effect of Surface Passivation on the Electrical Performance of AlG aN/GaNHEMTs with Slant Field Plates

dc.citation.woscount0en_US
dc.contributor.authorHsu, Heng-Tungen_US
dc.contributor.authorLin, Yueh-Chinen_US
dc.contributor.authorHuang, Lu-Cheen_US
dc.contributor.authorChang, Chia-Huaen_US
dc.contributor.authorHsieh, Ting-Enen_US
dc.contributor.authorItoh, Yasushien_US
dc.contributor.authorChang, Edward Yien_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.department國際半導體學院zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.contributor.departmentInternational College of Semiconductor Technologyen_US
dc.date.accessioned2017-04-21T06:49:23Z
dc.date.available2017-04-21T06:49:23Z
dc.date.issued2016en_US
dc.identifier.isbn978-1-5090-1964-9en_US
dc.identifier.journal2016 COMPOUND SEMICONDUCTOR WEEK (CSW) INCLUDES 28TH INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE & RELATED MATERIALS (IPRM) & 43RD INTERNATIONAL SYMPOSIUM ON COMPOUND SEMICONDUCTORS (ISCS)en_US
dc.identifier.urihttps://ir.lib.nycu.edu.tw/handle/11536/134547
dc.identifier.wosnumberWOS:000392285400095en_US
dc.language.isoen_USen_US
dc.titleThe Effect of Surface Passivation on the Electrical Performance of AlG aN/GaNHEMTs with Slant Field Platesen_US
dc.typeProceedings Paperen_US

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