Study of trap states in polyfluorene based devices by using TSC technique
| dc.citation.epage | 7213 | en_US |
| dc.citation.issue | 20 | en_US |
| dc.citation.spage | 7209 | en_US |
| dc.citation.volume | 516 | en_US |
| dc.contributor.author | Renaud, C. | en_US |
| dc.contributor.author | Huang, C. H. | en_US |
| dc.contributor.author | Lee, C. W. | en_US |
| dc.contributor.author | Le Rendu, P. | en_US |
| dc.contributor.author | Nguyen, T. P. | en_US |
| dc.contributor.department | 應用化學系 | zh_TW |
| dc.contributor.department | Department of Applied Chemistry | en_US |
| dc.date.accessioned | 2014-12-08T15:42:40Z | |
| dc.date.available | 2014-12-08T15:42:40Z | |
| dc.date.issued | 2008-08-30 | en_US |
| dc.description.abstract | The trap states in poly(9,9-dihexylfluorene-co-N,N-di(9,9-dihexyl-2-fluorenyl)-N-phenylamine) (PF-N-Ph) based light emitting diodes have been investigated by using the thermally stimulated current (TSC) technique in the temperature range of 90-320 K. The studied structure consisted of indium-tin-oxide/polyethylene-dioxythiophene: polystyrene-sulfonate/PF-N-Ph/Al. Four traps centers denoted as A, B, C, and D trap types have been identified with densities in the range of 10(16)-10(17) cm(-3). Study of the dependence of TSC characteristics on the device polarity suggested that the A, C and D type traps are electron traps while the B type traps are hole traps. They can be described by Gaussian distributions centered on mean trap levels. (c) 2008 Elsevier B.V. All rights reserved. | en_US |
| dc.identifier.doi | 10.1016/j.tsf.2007.12.063 | en_US |
| dc.identifier.issn | 0040-6090 | en_US |
| dc.identifier.journal | THIN SOLID FILMS | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1016/j.tsf.2007.12.063 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/28954 | |
| dc.identifier.wosnumber | WOS:000258603900099 | |
| dc.language.iso | en_US | en_US |
| dc.subject | traps | en_US |
| dc.subject | polyfluorene derivative | en_US |
| dc.subject | thermally stimulated currents | en_US |
| dc.title | Study of trap states in polyfluorene based devices by using TSC technique | en_US |
| dc.type | Article; Proceedings Paper | en_US |