Effects of thermal stabilities for the ultra thin chromium layers applied on (Ba,Sr)TiO3 thin films
| dc.citation.epage | 187 | en_US |
| dc.citation.spage | 183 | en_US |
| dc.citation.volume | 61 | en_US |
| dc.contributor.author | Kuo, MW | en_US |
| dc.contributor.author | Shye, DC | en_US |
| dc.contributor.author | Chiou, BS | en_US |
| dc.contributor.author | Chen, JS | en_US |
| dc.contributor.author | Cheng, HC | en_US |
| dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
| dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
| dc.date.accessioned | 2014-12-08T15:39:46Z | |
| dc.date.available | 2014-12-08T15:39:46Z | |
| dc.date.issued | 2004 | en_US |
| dc.description.abstract | This work reports the temperature-electric properties for the (Ba,Sr)TiO3(BST) thin film capacitor using the multi-film structure of BST/ultra-thin-chromium(Cr) layer/BST. The BST(200 nm)/Cr(1-3 nm)/BST(200 nm) multi-films reveal excellent properties in the thermal stabilities of dielectric property, low leakage current and less power dissipation. | en_US |
| dc.identifier.doi | 10.1080/10584580490459224 | en_US |
| dc.identifier.issn | 1058-4587 | en_US |
| dc.identifier.journal | INTEGRATED FERROELECTRICS | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1080/10584580490459224 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/27161 | |
| dc.identifier.wosnumber | WOS:000222470500030 | |
| dc.language.iso | en_US | en_US |
| dc.subject | BST (77.84.-s) | en_US |
| dc.subject | thermal stability (68.60.Dv) | en_US |
| dc.subject | dielectric property (77.55.+f) | en_US |
| dc.title | Effects of thermal stabilities for the ultra thin chromium layers applied on (Ba,Sr)TiO3 thin films | en_US |
| dc.type | Article; Proceedings Paper | en_US |