深次微米多晶矽鍺閘極金氧半電晶體之研製
| dc.contributor.author | 黃調元 | en_US |
| dc.contributor.author | TIAO-YUANHUANG | en_US |
| dc.contributor.department | 交通大學電子工程研究所 | zh_TW |
| dc.date.accessioned | 2014-12-13T10:46:17Z | |
| dc.date.available | 2014-12-13T10:46:17Z | |
| dc.date.issued | 2000 | en_US |
| dc.description.sponsorship | 行政院國家科學委員會 | zh_TW |
| dc.identifier.govdoc | NSC89-2215-E009-038 | zh_TW |
| dc.identifier.uri | https://www.grb.gov.tw/search/planDetail?id=720337&docId=135307 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/100704 | |
| dc.language.iso | zh_TW | en_US |
| dc.title | 深次微米多晶矽鍺閘極金氧半電晶體之研製 | zh_TW |
| dc.title | Fabrication and Charazterization of Deep Submicron MOS Transistor with Poly-SiGe Gate | en_US |
| dc.type | Plan | en_US |