等價位氮化物元件結構製備與相關物理特性研究(I)
| dc.contributor.author | 陳衛國 | en_US |
| dc.contributor.author | WEI-KUOCHEN | en_US |
| dc.contributor.department | 國立交通大學電子物理學系 | zh_TW |
| dc.date.accessioned | 2014-12-13T10:35:45Z | |
| dc.date.available | 2014-12-13T10:35:45Z | |
| dc.date.issued | 2001 | en_US |
| dc.description.sponsorship | 行政院國家科學委員會 | zh_TW |
| dc.identifier.govdoc | NSC90-2112-M009-044 | zh_TW |
| dc.identifier.uri | https://www.grb.gov.tw/search/planDetail?id=639691&docId=119715 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/93578 | |
| dc.language.iso | zh_TW | en_US |
| dc.subject | 等價位氮化物 | zh_TW |
| dc.subject | 特性 | zh_TW |
| dc.subject | 元件 | zh_TW |
| dc.subject | Isoelectronic nitride | en_US |
| dc.subject | Characterization | en_US |
| dc.subject | Device | en_US |
| dc.title | 等價位氮化物元件結構製備與相關物理特性研究(I) | zh_TW |
| dc.title | Characterizations and Fabrications of Isoelectronic Doped Nitride Device Structures(I) | en_US |
| dc.type | Plan | en_US |
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