| 1 |
Demonstration of a broad band spectral head-mounted display with freeform mirrors
|
2014-06-02 |
| 2 |
Evaluation of subcortical grey matter abnormalities in patients with MRI-negative cortical epilepsy determined through structural and tensor magnetic resonance imaging
|
2014-05-14 |
| 3 |
Thermal stability and folding kinetics analysis of disordered protein, securin
|
2014-03-01 |
| 4 |
A Fully Integrated 8-Channel Closed-Loop Neural-Prosthetic CMOS SoC for Real-Time Epileptic Seizure Control
|
2014-01-01 |
| 5 |
Through Diffusion Tensor Magnetic Resonance Imaging to Evaluate the Original Properties of Neural Pathways of Patients with Partial Seizures and Secondary Generalization by Individual Anatomic Reference Atlas
|
2014-01-01 |
| 6 |
The Photocatalytic Activity and Compact Layer Characteristics of TiO2 Films Prepared Using Radio Frequency Magnetron Sputtering
|
2014-01-01 |
| 7 |
Intelligent patent recommendation system for innovative design collaboration
|
2013-11-01 |
| 8 |
A Simple ICI Suppression Method Utilizing Cyclic Prefix for OFDM Systems in the Presence of Phase Noise
|
2013-11-01 |
| 9 |
Synthesis of Neisseria meningitidis Serogroup W135 Capsular Oligosaccharides for Immunogenicity Comparison and Vaccine Development
|
2013-08-26 |
| 10 |
Investigation the Electroplating Behavior of Self Formed CuMn Barrier |
2013-08-01 |
| 11 |
Effects of crystallization mechanism on the electrical characteristics of green continuous-wave-laser-crystallized polycrystalline silicon thin film transistors
|
2013-07-29 |
| 12 |
The aspect ratio effect on plasmonic properties and biosensing of bonding mode in gold elliptical nanoring arrays
|
2013-06-17 |
| 13 |
Slab Thickness Dependence of Localized Surface Plasmon Resonance Behavior in Gold Nanorings
|
2013-06-01 |
| 14 |
A CMOS Power-Efficient Low-Noise Current-Mode Front-End Amplifier for Neural Signal Recording
|
2013-04-01 |
| 15 |
Synthesis of large surface area carbon xerogels for electrochemical double layer capacitors
|
2013-02-01 |
| 16 |
Wide Tunning Range 60 GHz VCO and 40 GHz DCO Using Single Variable Inductor
|
2013-02-01 |
| 17 |
High-performance polycrystalline silicon thin-film transistors prepared via the laser crystallization of the prepatterned channel layer on the bottom-gate structure
|
2013-02-01 |
| 18 |
High-Performance Polycrystalline-Silicon Nanowire Thin-Film Transistors With Location-Controlled Grain Boundary via Excimer Laser Crystallization
|
2012-11-01 |
| 19 |
Method of compensating for pixel migration in volume holographic optical disc (VHOD)
|
2012-09-10 |
| 20 |
High Sensitivity of Dry-Type Nanowire Sensors With High-k Dielectrics for pH Detection via Capillary Atomic Force Microscope Tip Coating Technique
|
2012-09-01 |
| 21 |
A Novel Polysilicon Field-Enhanced Nanowire Thin-Film Transistor with the TiN-Hafnia-Nitride-Vacuum-Silicon (THNVAS) Structure for Nonvolatile Memory Applications |
2012-07-01 |
| 22 |
High-Performance Polycrystalline Silicon Thin-Film Transistors with Two-Dimensional Location Control of the Grain Boundary via Excimer Laser Crystallization |
2012-07-01 |
| 23 |
High-Performance Excimer-Laser-Crystallized Polycrystalline Silicon Thin-Film Transistors with the Pre-Patterned Recessed Channel
|
2012-06-01 |
| 24 |
Reliability improvement of InGaZnO thin film transistors encapsulated under nitrogen ambient
|
2012-04-09 |
| 25 |
Electron dephasing in homogeneous and inhomogeneous indium tin oxide thin films |
2012-03-05 |
| 26 |
Synthesis of new acetal aza-cage compounds via ozonolysis of bis-endo-diol- and diacylnorbornene derivatives
|
2012-03-04 |
| 27 |
Plasmonic Coupling in Gold Nanoring Dimers: Observation of Coupled Bonding Mode
|
2012-03-01 |
| 28 |
Gate-all-around polycrystalline-silicon thin-film transistors with self-aligned grain-growth nanowire channels
|
2012-02-27 |
| 29 |
Susceptor Coupling for the Uniformity and Dopant Activation Efficiency in Implanted Si Under Fixed-Frequency Microwave Anneal
|
2012-02-01 |
| 30 |
A patent quality analysis for innovative technology and product development
|
2012-01-01 |
| 31 |
Efficient reduction of graphene oxide catalyzed by copper
|
2012-01-01 |
| 32 |
Growth selectivity of hexagonal-boron nitride layers on Ni with various crystal orientations
|
2012-01-01 |
| 33 |
Responses of Rabbit Retinal Ganglion Cells to Subretinal Electrical Stimulation Using a Silicon-Based Microphotodiode Array
|
2011-12-01 |
| 34 |
Investigation of the Galvanic Effect between RuN Barriers and Cu Seed Layers
|
2011-12-01 |
| 35 |
A CMOS Bio-Inspired 2-D Motion Direction Sensor Based on a Direction Computation Method Derived From the Directionally Selective Ganglion Cells in the Retina
|
2011-12-01 |
| 36 |
Direct observation of two-color pulse dynamics in passively synchronized Er and Yb mode-locked fiber lasers
|
2011-11-21 |
| 37 |
Plasmonic Green Nanolaser Based on a Metal-Oxide-Semiconductor Structure
|
2011-10-01 |
| 38 |
Electrical conduction processes in ZnO in a wide temperature range 20-500 K
|
2011-09-15 |
| 39 |
Direct Formation of Wafer Scale Graphene Thin Layers on Insulating Substrates by Chemical Vapor Deposition
|
2011-09-01 |
| 40 |
A 78 similar to 102 GHz Front-End Receiver in 90 nm CMOS Technology
|
2011-09-01 |
| 41 |
The Design of a K-Band 0.8-V 9.2-mW Phase-Locked Loop
|
2011-08-01 |
| 42 |
Novel Dielectric-Engineered Trapping-Charge Poly-Si-TFT Memory With a TiN-Alumina-Nitride-Vacuum-Silicon Structure
|
2011-08-01 |
| 43 |
The Design of Double-Positive-Feedback Voltage-Controlled Oscillator
|
2011-07-01 |
| 44 |
Amorphous-Layer Regrowth and Activation of P and As Implanted Si by Low-Temperature Microwave Annealing
|
2011-07-01 |
| 45 |
Crosswise ridge micromixers with split and recombination helical flows
|
2011-05-15 |
| 46 |
Dopant Activation in Single-Crystalline Germanium by Low-Temperature Microwave Annealing
|
2011-02-01 |
| 47 |
An Intelligent System for Automated Binary Knowledge Document Classification and Content Analysis |
2011-01-01 |
| 48 |
Probing the binding kinetics of proinflammatory cytokine-antibody interactions using dual color fluorescence cross correlation spectroscopy
|
2011-01-01 |
| 49 |
High Tensile Stress with Minimal Dopant Diffusion by Low Temperature Microwave Anneal |
2011-01-01 |
| 50 |
Effect of Annealing on the Microstructure and Electrical Property of RuN Thin Films
|
2011-01-01 |
| 51 |
Efficient and color-saturated inverted bottom-emitting organic light-emitting devices with a semi-transparent metal-assisted electron injection layer
|
2011-01-01 |
| 52 |
Free-electronlike diffusive thermopower of indium tin oxide thin films
|
2010-12-15 |
| 53 |
Improvement in RF performance of 40-nm InAs-channel based HEMTs using Pt gate sinking with two-step recess processes technology
|
2010-12-01 |
| 54 |
Templated fabrication of nanostructured Ni brush for hydrogen evolution reaction
|
2010-10-01 |
| 55 |
Temperature dependence of resistance and thermopower of thin indium tin oxide films
|
2010-09-30 |
| 56 |
Stability Analysis of Autonomous Ratio-Memory Cellular Nonlinear Networks for Pattern Recognition
|
2010-08-01 |
| 57 |
Evaluation on carbon nanocapsules for supercapacitors using a titanium cavity electrode
|
2010-08-01 |
| 58 |
RF Performance Improvement of Metamorphic High-Electron Mobility Transistor Using (In(x)Ga(1-x)As)(m)/(InAs)(n) Superlattice-Channel Structure for Millimeter-Wave Applications |
2010-07-01 |
| 59 |
An Integrated CMOS Front-End Receiver with a Frequency Tripler for V-Band Applications
|
2010-06-01 |
| 60 |
Design and Analysis of a CMOS Ratio-Memory Cellular Nonlinear Network (RMCNN) Requiring No Elapsed Time
|
2010-06-01 |
| 61 |
RmpA Regulation of Capsular Polysaccharide Biosynthesis in Klebsiella pneumoniae CG43
|
2010-06-01 |
| 62 |
Nanoscale p-MOS Thin-Film Transistor With TiN Gate Electrode Fabricated by Low-Temperature Microwave Dopant Activation
|
2010-05-01 |
| 63 |
New Miniaturized Dual-Mode Dual-Band Ring Resonator Bandpass Filter With Microwave C-Sections
|
2010-02-01 |
| 64 |
Induction of HSPA4 and HSPA14 by NBS1 overexpression contributes to NBS1-induced in vitro metastatic and transformation activity
|
2010-01-06 |
| 65 |
Synthesis and Characterization of La(0.6)Ca(0.4)Co(0.8)Ru(0.2)O(3) for Oxygen Reduction Reaction in an Alkaline Electrolyte |
2010-01-01 |
| 66 |
TRANSMISSION ZERO DESIGN GRAPH FOR DUAL-MODE DUAL-BAND FILTER WITH PERIODIC STEPPED-IMPEDANCE RING RESONATOR |
2010-01-01 |
| 67 |
DC and RF Performance Improvement of 70 nm Quantum Well Field Effect Transistor by Narrowing Source-Drain Spacing Technology
|
2010-01-01 |
| 68 |
Flexible inverted bottom-emitting organic light-emitting devices with a semi-transparent metal-assisted electron-injection layer |
2010-01-01 |
| 69 |
45-nm Planar Bulk-CMOS 23-GHz LNAs With High-Q Above-IC Inductors
|
2010-01-01 |
| 70 |
A New Charge-Trap-Engineered Memory Device with Silicon-Oxide-Nitride-Vacuum-Silicon (SONVAS) Structure for LTPS-TFT-Based Applications |
2010-01-01 |
| 71 |
A Novel Transmission-Line Deembedding Technique for RF Device Characterization
|
2009-12-01 |
| 72 |
A 3-10 GHz CMOS UWB Low-Noise Amplifier With ESD Protection Circuits
|
2009-11-01 |
| 73 |
A Low-Power K-Band CMOS Current-Mode Up-Conversion Mixer Integrated with VCO
|
2009-10-01 |
| 74 |
Strong green photoluminescence from In(x)Ga(1-x)N/GaN nanorod arrays |
2009-09-28 |
| 75 |
Design of 24-GHz 0.8-V 1.51-mW Coupling Current-Mode Injection-Locked Frequency Divider With Wide Locking Range
|
2009-08-01 |
| 76 |
High-Performance Slow-Wave Transmission Lines With Optimized Slot-Type Floating Shields
|
2009-08-01 |
| 77 |
A Phase-Locked Loop With Injection-Locked Frequency Multiplier in 0.18-mu m CMOS for V-Band Applications
|
2009-07-01 |
| 78 |
A 1 V 23 GHz Low-Noise Amplifier in 45 nm Planar Bulk-CMOS Technology With High-Q Above-IC Inductors
|
2009-05-01 |
| 79 |
Synthesis of La(0.6)Ca(0.4)Co(0.8)Ir(0.2)O(3) perovskite for bi-functional catalysis in an alkaline electrolyte |
2009-04-15 |
| 80 |
Evidence for beta-lactoglobulin involvement in vitamin D transport in vivo- role of the gamma-turn (Leu-Pro-Met) of beta-lactoglobulin in vitamin D binding
|
2009-04-01 |
| 81 |
AUTOMATIC PATENT DOCUMENT SUMMARIZATION FOR COLLABORATIVE KNOWLEDGE SYSTEMS AND SERVICES
|
2009-03-01 |
| 82 |
Current-mode design techniques in low-voltage 24-GHz RF CMOS receiver front-end
|
2009-03-01 |
| 83 |
The Design and Analysis of a CMOS Low-Power Large-Neighborhood CNN With Propagating Connections
|
2009-02-01 |
| 84 |
A 1-V RF-CMOS LNA design utilizing the technique of capacitive feedback matching network
|
2009-01-01 |
| 85 |
A Novel Metamorphic High Electron Mobility Transistors with (In(x)Ga(1-x)As)(m)/(InAs)(n) Superlattice Channel Layer for Millimeter-Wave Applications |
2009-01-01 |
| 86 |
Dual-Band Rat-Race Coupler With Arbitrary Power Divisions Using Microwave C-Sections |
2009-01-01 |
| 87 |
A Novel LTPS-TFT-Based Charge-Trapping Memory Device with Field-Enhanced Nanowire Structure |
2009-01-01 |
| 88 |
The Design of Low LO-Power 60-GHz CMOS Quadrature-Balanced Self-Switching Current-Mode Mixer
|
2008-10-01 |
| 89 |
Design and analysis of CMOS subharmonic injection-locked frequency triplers
|
2008-08-01 |
| 90 |
Mechanical alloying preparation of La0.6Ca0.4CoIr0.25O3.5-delta as a bifunctional electrocatalyst in alkaline electrolyte |
2008-01-01 |
| 91 |
The design of integrated 3-GHz to 11-GHz CMOS transmitter for full-band ultra-wideband (UWB) applications |
2008-01-01 |
| 92 |
A 1.5-V 3 similar to 10-GHz 0.18-mu m CMOS Frequency Synthesizer for MB-OFDM UWB Applications |
2008-01-01 |
| 93 |
Modified resistive switching behavior of ZrO2 memory films based on the interface layer formed by using Ti top electrode
|
2007-11-01 |
| 94 |
A neuromorphic chip that imitates the ON brisk transient ganglion cell set in the retinas of rabbits
|
2007-09-01 |
| 95 |
Design and analysis of a millimeter-wave direct injection-locked frequency divider with large frequency locking range
|
2007-08-01 |
| 96 |
Fabrication of a miniature CMOS-based optical biosensor
|
2007-06-15 |
| 97 |
Effect of top electrode material on resistive switching properties of ZrO2 film memory devices
|
2007-05-01 |
| 98 |
Microstructure and recording mechanism of Ge/Au bilayer media for write-once optical disc
|
2007-04-09 |
| 99 |
Structural and optical properties of ZnMgO nanostructures formed by Mg in-diffused ZnO nanowires
|
2007-04-01 |
| 100 |
A 24-GHz CMOS current-mode power amplifier with high PAE and output power
|
2007-01-01 |
| 101 |
A CMOS expansion/contraction motion sensor with a retinal processing circuit for Z-motion detection applications
|
2007-01-01 |
| 102 |
Silver-carbon nanocapsule electrocatalyst for oxygen reduction reaction
|
2007-01-01 |
| 103 |
Bistable resistive switching in Al2O3 memory thin films
|
2007-01-01 |
| 104 |
Photodissociation dynamics of fluorobenzene (C6H5F) at 157 and 193 nm: Branching ratios and distributions of kinetic energy
|
2006-10-14 |
| 105 |
Band gap engineering and stimulated emission of ZnMgO nanowires
|
2006-07-03 |
| 106 |
Direct observation of structure effect on ferromagnetism in Zn1-xCoxO nanowires |
2006-06-01 |
| 107 |
Discovery of different types of inhibition between the human and Thermotoga maritima alpha-fucosidases by fuconojirimycin-based derivatives
|
2006-05-09 |
| 108 |
Design and fabrication of a photosensing nanodevice structure with CdSe and Au nanoparticles on a silicon chip
|
2006-05-01 |
| 109 |
Luminescence of selective area growth of epitaxial ZnO nanowires and random-growth-oriented nanobelts
|
2006-03-14 |
| 110 |
Orbital susceptibilities of PbSe quantum dots
|
2006-02-14 |
| 111 |
A poly-Si thin-film transistor with the in situ vacuum gaps under the T-shaped-gated electrode |
2006-01-01 |
| 112 |
The substrate effect on the in-plane orientation of vertically well-aligned ZnO nanorods grown on ZnO buffer layers
|
2005-12-01 |
| 113 |
Optimal design of CMOS pseudoactive pixel sensor (PAPS) structure for low-dark-current and large-array-size imager applications
|
2005-10-01 |
| 114 |
Photodissociation dynamics of formyl fluoride (HFCO) at 193 nm: Branching ratios and distributions of kinetic energy
|
2005-08-15 |
| 115 |
The design of wideband and low-power CMOS active polyphase filter and its application in RF double-quadrature receivers
|
2005-05-01 |
| 116 |
Stimulated emission and lasing of random-growth oriented ZnO nanowires
|
2005-03-15 |
| 117 |
Analysis and design of a CMOS angular velocity- and direction-selective rotation sensor with a retinal processing circuit
|
2004-12-01 |
| 118 |
Molecular elimination in photolysis of fluorobenzene at 193 nm: Internal energy of HF determined with time-resolved Fourier-transform spectroscopy
|
2004-11-08 |
| 119 |
A new CMOS pixel structure for low-dark-current and large-array-size still imager applications
|
2004-11-01 |
| 120 |
A low-photocuffent CMOS retinal focal-plane sensor with a pseudo-BJT smoothing network and an adaptive current Schmitt trigger for scanner applications
|
2004-08-01 |
| 121 |
Detection of serum uric acid using the optical polymeric enzyme biochip system
|
2004-07-15 |
| 122 |
The design of a novel complementary metal oxide semiconductor detection system for biochemical luminescence
|
2004-05-15 |
| 123 |
Photolysis of oxalyl chloride (ClCO)(2) at 193 nm: Emission of CO(v <= 6, J <= 60) detected with time-resolved Fourier-transform spectroscopy
|
2004-04-15 |
| 124 |
Implantable neuromorphic vision chips
|
2004-03-18 |
| 125 |
A 5-GHz CMOS double-quadrature receiver front-end with single-stage quadrature generator
|
2004-03-01 |
| 126 |
Design, optimization, and performance analysis of new photodiode structures for CMOS active-pixel-sensor (APS) imager applications
|
2004-02-01 |
| 127 |
New current-mode wave-pipelined architectures for high-speed analog-to-digital converters
|
2004-01-01 |
| 128 |
Analysis and design of a new SRAM memory cell based on vertical lambda bipolar transistor
|
2003-09-01 |
| 129 |
CMOS chip as luminescent sensor for biochemical reactions
|
2003-06-01 |
| 130 |
New high-speed low-power current-mode CMOS sense amplifier
|
2003-05-01 |
| 131 |
Photolysis of oxalyl chloride (ClCO)(2) at 248 nm: Emission of CO(v '<= 3, J '<= 51) detected with time-resolved Fourier transform spectroscopy
|
2003-04-10 |
| 132 |
A CMOS Focal-Plane Motion Sensor With BJT-Based Retinal Smoothing Network and Modified Correlation-Based Algorithm
|
2002-12-01 |
| 133 |
A learnable cellular neural network structure with ratio memory for image processing
|
2002-12-01 |
| 134 |
Substrate-triggered ESD clamp devices for use in power-rail ESD clamp circuits
|
2002-05-01 |
| 135 |
A 2-V low-power CMOS direct-conversion quadrature modulator with integrated quadrature voltage-controlled oscillator and RF amplifier for GHz RF transmitter applications
|
2002-02-01 |
| 136 |
New CMOS 2V low-power IF fully differential Rm-C bandpass amplifier for RF wireless receivers
|
2001-12-01 |
| 137 |
Effect of montmorillonite on thermal and moisture absorption properties of polyimide of different chemical structures
|
2001-08-15 |
| 138 |
Synthesis of novel acetal thia-cage compounds
|
2001-06-29 |
| 139 |
In the blink of a silicon eye
|
2001-05-01 |
| 140 |
On-chip ESD protection design by using polysilicon diodes in CMOS process
|
2001-04-01 |
| 141 |
A new compact neuron-bipolar junction transistor (nu BJT) cellular neural network (CNN) structure with programmable large neighborhood symmetric templates for image processing
|
2001-01-01 |
| 142 |
The design of a 2-V 900-MHz CMOS bandpass amplifier |
2001-01-01 |
| 143 |
ESD protection design on analog pin with very low input capacitance for high-frequency or current-mode applications
|
2000-08-01 |
| 144 |
Fused-ring and linking group effects of proton donors and accepters on simple H-bonded liquid crystals
|
2000-08-01 |
| 145 |
A new observation of band-to-band tunneling induced hot-carrier stress using charge-pumping technique
|
2000-03-01 |
| 146 |
A new charge-pumping technique for profiling the interface-states and oxide-trapped charges in MOSFET's
|
2000-02-01 |
| 147 |
An improved BJT-based silicon retina with tunable image smoothing capability
|
1999-06-01 |
| 148 |
A new quasi-2-D model for hot-carrier band-to-band tunneling current
|
1999-06-01 |
| 149 |
A new I-V model considering the impact-ionization effect initiated by the DIGBL current for the intrinsic n-channel poly-Si TFT's
|
1999-04-01 |
| 150 |
A novel transient simulation for 3-D multilevel interconnections on complex topography
|
1999-04-01 |
| 151 |
Synthesis of pentaoxa[5]peristylanes
|
1999-03-05 |
| 152 |
A 2-D velocity- and direction-selective sensor with BJT-based silicon retina and temporal zero-crossing detector
|
1999-02-01 |
| 153 |
A new true-single-phase-clocking BiCMOS dynamic pipelined logic family for high-speed, low-voltage pipelined system applications
|
1999-01-01 |
| 154 |
An analytical grain-barrier height model and its characterization for intrinsic poly-Si thin-film transistor
|
1998-10-01 |
| 155 |
A 1.5-V differential cross-coupled bootstrapped BiCMOS logic for low-voltage applications |
1998-10-01 |
| 156 |
An efficient transient modeling for 3-D multilevel interconnections in a stratified dielectric medium
|
1998-10-01 |
| 157 |
High-performance CMOS buffered gate modulation input (BGMI) readout circuits for IR FPA
|
1998-08-01 |
| 158 |
A parallel structure for CMOS four-quadrant analog multipliers and its application to a 2-GHz RF downconversion mixer
|
1998-06-01 |
| 159 |
Multiple-cell square-type layout design for output transistors in submicron CMOS technology to save silicon area
|
1998-06-01 |
| 160 |
Computer-generated holographic diffuser for color mixing
|
1998-05-15 |
| 161 |
Electron-phonon scattering times in crystalline disordered titanium alloys between 3 and 15 K |
1998-05-01 |
| 162 |
A novel modeling technique for efficiently computing 3-D capacitances of VLSI multilevel interconnections BFEM
|
1998-01-01 |
| 163 |
A new simulation model for plasma ashing process-induced oxide degradation in MOSFET
|
1998-01-01 |
| 164 |
Synthesis of 3,11-dioxatetracyclo[6.3.0.0(2,6).0(5,9)]undecanes and 3,5,7-trioxapentacyclo[7.2.1.0(2,8).0(4,11).0(6,10)]dodecane |
1997-12-01 |
| 165 |
A new method for extracting the channel-length reduction and the gate-voltage-dependent series resistance of counter-implanted p-MOSFET's
|
1997-12-01 |
| 166 |
A new method for extracting the counter-implanted channel profile of enhancement-mode p-MOSFET's
|
1997-12-01 |
| 167 |
Focal-plane-arrays and CMOS readout techniques of infrared imaging systems
|
1997-08-01 |
| 168 |
A new cryogenic CMOS readout structure for infrared focal plane array
|
1997-08-01 |
| 169 |
A novel charge-pumping method for extracting the lateral distributions of interface-trap and effective oxide-trapped charge densities in MOSFET devices
|
1997-05-01 |
| 170 |
The pentaoxa[5] peristylanes. A novel oxa-cage system
|
1997-04-07 |
| 171 |
The design of rotation-invariant pattern recognition using the silicon retina
|
1997-04-01 |
| 172 |
The threshold-voltage model of MOSFET devices with localized interface charge
|
1997-03-01 |
| 173 |
Ozonolysis of 2-endo-7-anti-diacylnorbornenes. A new entry for the synthesis of 2,4,6,13-tetraoxapentacyclo[5.5.1.0(3,11).0(5,9).0(8,12)]tridecanes
|
1997-02-17 |
| 174 |
The design of a 3-V 900-MHz CMOS bandpass amplifier
|
1997-02-01 |
| 175 |
A gate-coupled PTLSCR/NTLSCR ESD protection circuit for deep-submicron low-voltage CMOS IC's
|
1997-01-01 |
| 176 |
Low-temperature characteristics of well-type guard rings in epitaxial CMOS
|
1996-12-01 |
| 177 |
Capacitor-couple ESD protection circuit for deep-submicron low-voltage CMOS ASIC
|
1996-09-01 |
| 178 |
A CMOS ratio-independent and gain-insensitive algorithmic analog-to-digital converter
|
1996-08-01 |
| 179 |
Synthesis of tetraacetal tetraoxa-cage compounds with alkyl substituents at different sites of the oxa-cage skeleton |
1996-06-01 |
| 180 |
A new extraction algorithm for the metallurgical channel length of conventional and LDD MOSFET's
|
1996-06-01 |
| 181 |
A novel two-step etching process for reducing plasma-induced oxide damage
|
1996-05-01 |
| 182 |
The design of CMOS continuous-time VHF current and voltage-mode lowpass filters with Q-enhancement circuits
|
1996-05-01 |
| 183 |
Design techniques for VHF/UHF high-Q tunable bandpass filters using simple CMOS inverter-based transresistance amplifiers
|
1996-05-01 |
| 184 |
Complementary-LVTSCR ESD protection circuit for submicron CMOS VLSI/ULSI
|
1996-04-01 |
| 185 |
Synthesis of novel triacetal trioxa-cage compounds by ozonolysis of bicyclo[2.2.1]heptenes and bicyclo[2.2.2]octenes |
1996-04-01 |
| 186 |
A design strategy for short gate length SOI MESFETs
|
1996-03-01 |
| 187 |
A novel method for extracting the metallurgical channel length of MOSFET's using a single device
|
1996-03-01 |
| 188 |
Analog electronic cochlea design using multiplexing switched-capacitor circuits
|
1996-01-01 |
| 189 |
CMOS current-mode neural associative memory design with on-chip learning
|
1996-01-01 |
| 190 |
Synthesis of novel triacetal oxa-cage compounds |
1996-01-01 |
| 191 |
A 2-D ANALYTIC MODEL FOR THE THRESHOLD-VOLTAGE OF FULLY DEPLETED SHORT GATE-LENGTH SI-SOI MESFETS
|
1995-12-01 |
| 192 |
A CMOS CURRENT-MODE DESIGN OF MODIFIED LEARNING-VECTOR-QUANTIZATION NEURAL NETWORKS |
1995-09-01 |
| 193 |
A NEW SIMPLIFIED THRESHOLD-VOLTAGE MODEL FOR N-MOSFETS WITH NONUNIFORMLY DOPED SUBSTRATE AND ITS APPLICATION TO MOSFETS MINIATURIZATION
|
1995-08-01 |
| 194 |
A NEW STRUCTURE OF THE 2-D SILICON RETINA
|
1995-08-01 |
| 195 |
COMPLEMENTARY-SCR ESD PROTECTION CIRCUIT WITH INTERDIGITATED FINGER-TYPE LAYOUT FOR INPUT PADS OF SUBMICRON CMOS ICS
|
1995-07-01 |
| 196 |
A SIMPLE AND ACCURATE SIMULATION TECHNIQUE FOR FLASH EEPROM WRITING AND ITS RELIABILITY ISSUE
|
1995-07-01 |
| 197 |
A NEW CONSTANT-FIELD SCALING THEORY FOR MOSFETS
|
1995-07-01 |
| 198 |
MODELING THE POSITIVE-FEEDBACK REGENERATIVE PROCESS OF CMOS LATCHUP BY A POSITIVE TRANSIENT POLE METHOD .1. THEORETICAL DERIVATION
|
1995-06-01 |
| 199 |
MODELING THE POSITIVE-FEEDBACK REGENERATIVE PROCESS OF CMOS LATCHUP BY A POSITIVE TRANSIENT POLE METHOD .2. QUANTITATIVE-EVALUATION
|
1995-06-01 |
| 200 |
CMOS CURRENT-MODE IMPLEMENTATION OF SPATIOTEMPORAL PROBABILISTIC NEURAL NETWORKS FOR SPEECH RECOGNITION |
1995-06-01 |
| 201 |
A CMOS TRANSISTOR-ONLY 8-B 4.5-MS/S PIPELINED ANALOG-TO-DIGITAL CONVERTER USING FULLY-DIFFERENTIAL CURRENT-MODE CIRCUIT TECHNIQUES
|
1995-05-01 |
| 202 |
A NOVEL EXTRACTION TECHNIQUE FOR THE EFFECTIVE CHANNEL-LENGTH OF MOSFET DEVICES
|
1995-05-01 |
| 203 |
A NEW GATE CURRENT SIMULATION TECHNIQUE CONSIDERING SI/SIO2 INTERFACE-TRAP GENERATION
|
1995-04-01 |
| 204 |
LATERAL TITANIUM SILICIDE GROWTH AND ITS SUPPRESSION USING THE A-SI/TI BILAYER STRUCTURE
|
1995-03-01 |
| 205 |
THE EFFECTS OF IMPURITY BANDS ON THE ELECTRICAL CHARACTERISTICS OF METAL-SEMICONDUCTOR OHMIC CONTACTS
|
1995-01-01 |
| 206 |
NEW DESIGN TECHNIQUES FOR A COMPLEMENTARY METAL-OXIDE-SEMICONDUCTOR CURRENT READOUT INTEGRATED-CIRCUIT FOR INFRARED DETECTOR ARRAYS
|
1995-01-01 |
| 207 |
REALIZATIONS OF HIGH-ORDER SWITCHED-CAPACITOR FILTERS USING MULTIPLEXING TECHNIQUE
|
1994-12-01 |
| 208 |
A 10-B 225-MHZ CMOS DIGITAL-TO-ANALOG CONVERTER (DAC) WITH THRESHOLD-VOLTAGE COMPENSATED CURRENT SOURCES
|
1994-11-01 |
| 209 |
NEW DESIGN METHODOLOGY AND NEW DIFFERENTIAL LOGIC-CIRCUITS FOR THE IMPLEMENTATION OF TERNARY LOGIC SYSTEMS IN CMOS-VLSI WITHOUT PROCESS MODIFICATION |
1994-06-01 |
| 210 |
A SELF-CONSISTENT CHARACTERIZATION METHODOLOGY FOR SCHOTTKY-BARRIER DIODES AND OHMIC CONTACTS
|
1994-04-01 |
| 211 |
TRANSIENT ANALYSIS OF SUBMICRON CMOS LATCHUP WITH A PHYSICAL CRITERION |
1994-02-01 |
| 212 |
A CHARACTERIZATION TECHNIQUE FOR THE DEGRADATION CHARACTERISTICS OF TI/SI SCHOTTKY-BARRIER DIODES AND OHMIC CONTACTS AFTER THERMAL SILICIDATION |
1994-02-01 |
| 213 |
CMOS ON-CHIP ELECTROSTATIC DISCHARGE PROTECTION CIRCUIT USING 4-SCR STRUCTURES WITH LOW ESD-TRIGGER VOLTAGE |
1994-01-01 |
| 214 |
NOVEL CHARACTERISTICS OF THE POLYSILICON HIGH-LOW-EMITTER (PHL-EMITTER) BIPOLAR-TRANSISTOR HIGH-CURRENT GAIN AND ZERO ACTIVATION-ENERGY |
1994-01-01 |
| 215 |
A NOVEL PHL-EMITTER BIPOLAR-TRANSISTOR - FABRICATION AND CHARACTERIZATION |
1993-10-01 |
| 216 |
A NEW 2D ANALYTIC THRESHOLD-VOLTAGE MODEL FOR FULLY DEPLETED SHORT-CHANNEL SOI MOSFETS
|
1993-09-01 |
| 217 |
THE DESIGN OF FULLY DIFFERENTIAL CMOS OPERATIONAL-AMPLIFIERS WITHOUT EXTRA COMMON-MODE FEEDBACK-CIRCUITS |
1993-09-01 |
| 218 |
A NEW GRID-GENERATION METHOD FOR 2-D SIMULATION OF DEVICES WITH NONPLANAR SEMICONDUCTOR SURFACE
|
1993-09-01 |
| 219 |
DESIGN AND APPLICATION OF PIPELINED DYNAMIC CMOS TERNARY LOGIC AND SIMPLE TERNARY DIFFERENTIAL LOGIC
|
1993-08-01 |
| 220 |
A NEW IV MODEL FOR SHORT GATE-LENGTH MESFETS
|
1993-04-01 |
| 221 |
ANALYSIS AND DESIGN OF A NEW RACE-FREE 4-PHASE CMOS LOGIC
|
1993-01-01 |
| 222 |
A NEW OXIDATION-RESISTANT COSI2 PROCESS FOR SELF-ALIGNED SILICIDATION (SALICIDE) TECHNOLOGY |
1993-01-01 |
| 223 |
A NEW METHODOLOGY FOR 2-DIMENSIONAL NUMERICAL-SIMULATION OF SEMICONDUCTOR-DEVICES
|
1992-12-01 |
| 224 |
HIGH-PRECISION CURVATURE-COMPENSATED CMOS BAND-GAP VOLTAGE AND CURRENT REFERENCES |
1992-09-01 |
| 225 |
NEW FAST FIXED-DELAY SIZING ALGORITHM FOR HIGH-PERFORMANCE CMOS COMBINATIONAL LOGIC-CIRCUITS AND ITS APPLICATIONS
|
1992-09-01 |
| 226 |
THE PROCESS WINDOW OF A-SI/TI BILAYER METALLIZATION FOR AN OXIDATION-RESISTANT AND SELF-ALIGNED TISI2 PROCESS
|
1992-08-01 |
| 227 |
A NEW 2-DIMENSIONAL MODEL FOR THE POTENTIAL DISTRIBUTION OF SHORT GATE-LENGTH MESFETS AND ITS APPLICATIONS
|
1992-08-01 |
| 228 |
PHYSICAL MODEL FOR CHARACTERIZING AND SIMULATING A FLOTOX EEPROM DEVICE |
1992-05-01 |
| 229 |
A NEW ON-CHIP ESD PROTECTION CIRCUIT WITH DUAL PARASITIC SCR STRUCTURES FOR CMOS VLSI
|
1992-03-01 |
| 230 |
A NEW SIMPLIFIED 2-DIMENSIONAL MODEL FOR THE THRESHOLD VOLTAGE OF MOSFETS WITH NONUNIFORMLY DOPED SUBSTRATE
|
1991-06-01 |
| 231 |
A NEW METHODOLOGY FOR DEVELOPING A FAST 2-DIMENSIONAL MOSFET DEVICE SIMULATOR |
1991-06-01 |
| 232 |
EFFICIENT TECHNIQUES IN THE SIZING AND CONSTRAINED OPTIMIZATION OF CMOS COMBINATIONAL LOGIC-CIRCUITS
|
1991-05-01 |
| 233 |
NEW PHYSICAL TIMING MODELS OF BIPOLAR NONSATURATION LOGIC USING CURRENT DOMAIN ANALYSIS TECHNIQUE |
1991-04-01 |
| 234 |
PHYSICAL TIMING MODELS AND DESIGN METHODOLOGY OF BIPOLAR NONTHRESHOLD LOGIC-CIRCUITS |
1990-12-01 |
| 235 |
REALIZATIONS OF IIR/FIR AND N-PATH FILTERS USING A NOVEL SWITCHED-CAPACITOR TECHNIQUE
|
1990-10-01 |
| 236 |
DELAY MODELS AND SPEED IMPROVEMENT TECHNIQUES FOR RC TREE INTERCONNECTIONS AMONG SMALL-GEOMETRY CMOS INVERTERS
|
1990-10-01 |
| 237 |
AN ANALYTIC SATURATION MODEL FOR DRAIN AND SUBSTRATE CURRENTS OF CONVENTIONAL AND LDD MOSFETS
|
1990-07-01 |
| 238 |
EXCELLENT THERMAL-STABILITY OF COBALT ALUMINUM-ALLOY SCHOTTKY CONTACTS ON GAAS SUBSTRATES |
1990-07-01 |
| 239 |
MOS DEVICE PARAMETER OPTIMIZATION BASED ON TRANSIENT TRAJECTORY CONSIDERATIONS |
1990-05-01 |
| 240 |
A QUASI-2-DIMENSIONAL ANALYTICAL MODEL FOR THE TURN-ON CHARACTERISTICS OF POLYSILICON THIN-FILM TRANSISTORS
|
1990-03-01 |
| 241 |
THE EFFECT OF GATE ELECTRODES USING TUNGSTEN SILICIDES AND OR POLYSILICON ON THE DIELECTRIC CHARACTERISTICS OF VERY THIN OXIDES |
1990-03-01 |
| 242 |
A NEW ALGORITHM FOR STEADY-STATE 2-D NUMERICAL-SIMULATION OF MOSFETS |
1990-02-01 |
| 243 |
REALIZATIONS OF IIR FIR AND N-PATH FILTERS USING A NOVEL SWITCHED-CAPACITOR TECHNIQUE
|
1990-01-01 |
| 244 |
ANALYSIS AND MODELING OF INITIAL DELAY TIME AND ITS IMPACT ON PROPAGATION DELAY OF CMOS LOGIC GATES
|
1989-10-01 |
| 245 |
A NEW GENERAL-METHOD TO MODEL SIGNAL TIMING OF E D NMOS LOGIC
|
1989-10-01 |
| 246 |
A NEW CRITERION FOR TRANSIENT LATCHUP ANALYSIS IN BULK CMOS
|
1989-07-01 |
| 247 |
A NEW TWIN-WELL CMOS PROCESS USING NITRIDIZED-OXIDE-LOCOS (NOLOCOS) ISOLATION TECHNOLOGY
|
1989-07-01 |
| 248 |
PHYSICAL TIMING MODELS OF SMALL-GEOMETRY CMOS INVERTERS AND MULTI-INPUT NAND NOR GATES AND THEIR APPLICATIONS |
1989-06-01 |
| 249 |
CMOS NONTHRESHOLD LOGIC (NTL) AND CASCODE NONTHRESHOLD LOGIC (CNTL) FOR HIGH-SPEED APPLICATIONS
|
1989-06-01 |
| 250 |
AN IMPROVED PROPAGATION-DELAY-TIME FORMULA FOR THE SUB-MICRON N-MOS INVERTER |
1989-06-01 |
| 251 |
NOVEL DYNAMIC CMOS LOGIC FREE FROM PROBLEMS OF CHARGE SHARING AND CLOCK SKEW |
1989-05-01 |
| 252 |
THE EFFECT OF LAYOUT, SUBSTRATE WELL BIASES, AND TRIGGERING SOURCE LOCATION ON LATCHUP TRIGGERING CURRENTS IN BULK CMOS CIRCUITS |
1989-04-01 |
| 253 |
COBALT SILICIDE INTERCONNECTION FROM A SI/W/CO TRILAYER STRUCTURE
|
1989-01-01 |
| 254 |
LOW-POWER DYNAMIC TERNARY LOGIC |
1988-12-01 |
| 255 |
A NEW EXPERIMENTAL-METHOD TO DETERMINE THE SATURATION VOLTAGE OF A SMALL-GEOMETRY MOSFET |
1988-09-01 |
| 256 |
A NEW LATERAL GROWTH FREE FORMATION TECHNIQUE FOR TITANIUM SILICIDE USING THE SI/W/TI TRILAYER STRUCTURE
|
1988-09-01 |
| 257 |
INTEGRAL-EQUATION SOLUTION FOR HYPERBOLIC HEAT-CONDUCTION WITH SURFACE RADIATION |
1988-05-01 |
| 258 |
TIMING MACROMODELS FOR CMOS STATIC SET RESET LATCHES AND THEIR APPLICATIONS
|
1988-05-01 |
| 259 |
A NEW METHOD FOR DETERMINING THE TERMINAL SERIES RESISTANCES AND HIGH-INJECTION COEFFICIENT OF BIPOLAR-TRANSISTORS IN CMOS INTEGRATED-CIRCUITS FOR COMPUTER-AIDED CIRCUIT MODELING |
1988-05-01 |
| 260 |
GENERAL EXPERIMENTAL-METHOD OF PARAMETER EXTRACTION FOR CMOS TIMING MACROMODELS |
1988-04-01 |
| 261 |
THE EFFECTS OF THERMAL SILICIDATION ON THE CURRENT TRANSPORT CHARACTERISTICS OF TI/(111)SI SCHOTTKY-BARRIER CONTACTS |
1988-01-01 |
| 262 |
A NEW APPROACH TO ANALYTICALLY SOLVING THE TWO-DIMENSIONAL POISSON EQUATION AND ITS APPLICATION IN SHORT-CHANNEL MOSFET MODELING
|
1987-09-01 |
| 263 |
A SIMPLIFIED COMPUTER-ANALYSIS FOR NORMAL-WELL GUARD RING EFFICIENCY IN CMOS CIRCUITS |
1987-08-01 |
| 264 |
THE DIELECTRIC RELIABILITY OF INTRINSIC THIN SIO2-FILMS THERMALLY GROWN ON A HEAVILY DOPED SI SUBSTRATE - CHARACTERIZATION AND MODELING
|
1987-07-01 |
| 265 |
TRANSPORT-PROPERTIES OF THERMAL OXIDE-FILMS GROWN ON POLYCRYSTALLINE SILICON - MODELING AND EXPERIMENTS
|
1987-07-01 |
| 266 |
AN ANALYTIC IV MODEL FOR LIGHTLY DOPED DRAIN (LDD) MOSFET DEVICES
|
1987-06-01 |
| 267 |
SUPERIOR CHARACTERISTICS OF THERMAL OXIDE LAYERS GROWN ON AMORPHOUS-SILICON FILMS |
1987-04-27 |
| 268 |
THE DISTORTION OF THE INTERFACE-STATE SPECTRUM DUE TO NONEQUILIBRIUM OCCUPANCY OF THE INTERFACE STATES AT THE METAL-SEMICONDUCTOR INTERFACE |
1987-04-15 |
| 269 |
THE EFFECTS OF THERMAL NITRIDATION CONDITIONS ON THE RELIABILITY OF THIN NITRIDED OXIDE-FILMS
|
1987-04-01 |
| 270 |
A NEW STRUCTURE-ORIENTED MODEL FOR WELL RESISTANCE IN CMOS LATCHUP STRUCTURES
|
1987-04-01 |
| 271 |
A SIMPLE INTERFACIAL-LAYER MODEL FOR THE NONIDEAL IV AND C-V CHARACTERISTICS OF THE SCHOTTKY-BARRIER DIODE |
1987-04-01 |
| 272 |
THE ANALYSIS AND DESIGN OF CMOS MULTIDRAIN LOGIC AND STACKED MULTIDRAIN LOGIC
|
1987-02-01 |
| 273 |
A SIMPLE TECHNIQUE FOR MEASURING THE INTERFACE-STATE DENSITY OF THE SCHOTTKY-BARRIER DIODES USING THE CURRENT-VOLTAGE CHARACTERISTICS |
1987-01-01 |
| 274 |
A CHARACTERIZATION MODEL FOR CONSTANT CURRENT STRESSED VOLTAGE-TIME CHARACTERISTICS OF THIN THERMAL OXIDES GROWN ON SILICON SUBSTRATE |
1986-12-01 |
| 275 |
A NEW OXIDATION-RESISTANT SELF-ALIGNED TISI2 PROCESS
|
1986-11-01 |
| 276 |
AN ENVIRONMENT-INSENSITIVE TRILAYER STRUCTURE FOR TITANIUM SILICIDE FORMATION
|
1986-11-01 |
| 277 |
A CHARACTERIZATION MODEL FOR RAMP-VOLTAGE-STRESSED IV CHARACTERISTICS OF THIN THERMAL OXIDES GROWN ON SILICON SUBSTRATE |
1986-10-01 |
| 278 |
CORRELATIONS BETWEEN CMOS LATCH-UP CHARACTERISTICS AND SUBSTRATE STRUCTURE PARAMETERS |
1986-10-01 |
| 279 |
AN EFFICIENT METHOD FOR CALCULATING THE DC TRIGGERING CURRENTS IN CMOS LATCH-UP |
1986-05-01 |
| 280 |
A NEW ANALYTICAL 3-DIMENSIONAL MODEL FOR SUBSTRATE RESISTANCE IN CMOS LATCHUP STRUCTURES
|
1986-04-01 |
| 281 |
AN ANALYTIC THRESHOLD-VOLTAGE MODEL FOR SHORT-CHANNEL ENHANCEMENT MODE N-CHANNEL MOSFETS WITH DOUBLE BORON CHANNEL IMPLANTATION |
1986-04-01 |
| 282 |
AN EFFICIENT TWO-DIMENSIONAL MODEL FOR CMOS LATCHUP ANALYSIS |
1986-04-01 |
| 283 |
SUPERIOR CHARACTERISTICS OF NITRIDIZED THERMAL OXIDE GROWN ON POLYCRYSTALLINE SILICON |
1986-01-13 |
| 284 |
THE LAMBDA-BIPOLAR PHOTOTRANSISTOR ANALYSIS AND APPLICATIONS
|
1985-12-01 |
| 285 |
AN ACCURATE AND ANALYTIC THRESHOLD-VOLTAGE MODEL FOR SMALL-GEOMETRY MOSFETS WITH SINGLE-CHANNEL ION-IMPLANTATION IN VLSI |
1985-12-01 |
| 286 |
AN ACCURATE MOBILITY MODEL FOR THE I-V-CHARACTERISTICS OF N-CHANNEL ENHANCEMENT-MODE MOSFETS WITH SINGLE-CHANNEL BORON IMPLANTATION |
1985-12-01 |
| 287 |
A NEW THRESHOLD-VOLTAGE MODEL FOR SMALL-GEOMETRY BURIED-CHANNEL MOSFETS |
1985-12-01 |
| 288 |
MOBILITY MODELS FOR THE IV CHARACTERISTICS OF BURIED-CHANNEL MOSFETS |
1985-01-01 |
| 289 |
AN EFFICIENT TIMING MODEL FOR CMOS COMBINATIONAL LOGIC GATES
|
1985-01-01 |
| 290 |
A NEW APPROACH TO MODEL CMOS LATCHUP
|
1985-01-01 |
| 291 |
A SIMPLE PUNCHTHROUGH VOLTAGE MODEL FOR SHORT-CHANNEL MOSFETS WITH SINGLE CHANNEL IMPLANTATION IN VLSI
|
1985-01-01 |
| 292 |
A NEW METHOD FOR COMPUTER-AIDED OPTIMIZATION OF SOLAR-CELL STRUCTURES |
1985-01-01 |
| 293 |
A STRUCTURE-ORIENTED MODEL FOR DETERMINING THE SUBSTRATE SPREADING RESISTANCE IN BULK CMOS LATCH-UP PATHS AND ITS APPLICATION IN HOLDING CURRENT PREDICTION |
1985-01-01 |
| 294 |
THE METAL-INSULATOR-SEMICONDUCTOR-SWITCH (MISS) DEVICE USING THERMAL NITRIDE FILM AS THE TUNNELING INSULATOR |
1984-01-01 |
| 295 |
AN ANALYTIC AND ACCURATE MODEL FOR THE THRESHOLD VOLTAGE OF SHORT CHANNEL MOSFETS IN VLSI |
1984-01-01 |
| 296 |
A NEW DYNAMIC RANDOM-ACCESS MEMORY CELL USING A BIPOLAR MOS COMPOSITE STRUCTURE
|
1983-01-01 |
| 297 |
A NEW COMPUTER-AIDED SIMULATION-MODEL FOR POLYCRYSTALLINE SILICON FILM RESISTORS |
1983-01-01 |
| 298 |
A NEW INTERNAL OVERVOLTAGE PROTECTION STRUCTURE FOR THE BIPOLAR POWER TRANSISTOR
|
1983-01-01 |
| 299 |
A NEW HIGH-POWER VOLTAGE-CONTROLLED DIFFERENTIAL NEGATIVE-RESISTANCE DEVICE - THE LAMBDA-BIPOLAR POWER TRANSISTOR
|
1983-01-01 |
| 300 |
THE EFFECT OF THE MINORITY-CARRIER DISTRIBUTION ON THE THRESHOLD VOLTAGE OF A MOSFET |
1983-01-01 |
| 301 |
A COMPUTER-AIDED SIMULATION-MODEL FOR THE IV CHARACTERISTIC OF M-N-P SILICON SCHOTTKY-BARRIER DIODES PRODUCED BY USE OF LOW-ENERGY ARSENIC-ION IMPLANTATION |
1983-01-01 |
| 302 |
OXIDATION RESISTANCE CHARACTERISTICS OF SILICON THERMAL NITRIDE FILMS
|
1983-01-01 |
| 303 |
TEMPERATURE COEFFICIENTS OF THE OPEN-CIRCUIT VOLTAGE OF P-N-JUNCTION SOLAR-CELLS |
1982-01-01 |
| 304 |
GROWTH-KINETICS OF SILICON THERMAL NITRIDATION
|
1982-01-01 |
| 305 |
INTERFACIAL LAYER-THERMIONIC-DIFFUSION THEORY FOR THE SCHOTTKY-BARRIER DIODE |
1982-01-01 |
| 306 |
DOPING AND TEMPERATURE DEPENDENCES OF MINORITY-CARRIER DIFFUSION LENGTH AND LIFETIME DEDUCED FROM THE SPECTRAL RESPONSE MEASUREMENTS OF P-N-JUNCTION SOLAR-CELLS |
1982-01-01 |
| 307 |
THE BIAS-DEPENDENT PHOTOELECTRIC BARRIER HEIGHT OF THE SCHOTTKY DIODES |
1981-01-01 |
| 308 |
THE NEW GENERAL REALIZATION-THEORY OF FET-LIKE INTEGRATED VOLTAGE-CONTROLLED NEGATIVE DIFFERENTIAL RESISTANCE DEVICES
|
1981-01-01 |
| 309 |
CHARACTERIZATIONS AND DESIGN CONSIDERATIONS OF LAMBDA BIPOLAR-TRANSISTOR (LBT) |
1981-01-01 |
| 310 |
AN ANALYTICAL MODEL FOR HIGH-LOW-EMITTER (HLE) SOLAR-CELLS IN CONCENTRATED SUNLIGHT |
1981-01-01 |
| 311 |
BARRIER HEIGHT ENHANCEMENT OF THE SCHOTTKY-BARRIER DIODE USING A THIN UNIFORMLY-DOPED SURFACE-LAYER |
1981-01-01 |
| 312 |
INTERFACIAL LAYER THEORY OF THE SCHOTTKY-BARRIER DIODES |
1980-01-01 |
| 313 |
BARRIER HEIGHT REDUCTION OF THE SCHOTTKY-BARRIER DIODE USING A THIN HIGHLY DOPED SURFACE-LAYER |
1980-01-01 |
| 314 |
CURRENT GAIN OF THE BIPOLAR-TRANSISTOR |
1980-01-01 |
| 315 |
AN ANALYSIS AND THE FABRICATION TECHNOLOGY OF THE LAMBDA BIPOLAR-TRANSISTOR
|
1980-01-01 |
| 316 |
GENERALIZED THEORY AND REALIZATION OF A VOLTAGE-CONTROLLED NEGATIVE-RESISTANCE MOS DEVICE (LAMBDA-MOSFET) |
1980-01-01 |
| 317 |
THEORETICAL AND EXPERIMENTAL CHARACTERIZATION OF THE DUAL-BASE TRANSISTOR (DUBAT) |
1980-01-01 |
| 318 |
CURRENT GAIN OF HIGH-LOW JUNCTION EMITTER BIPOLAR-TRANSISTOR STRUCTURE WITH UNIFORMLY DOPED PROFILES |
1980-01-01 |
| 319 |
THE OPEN-CIRCUIT VOLTAGE OF BACK-SURFACE-FIELD (BSF) P-N-JUNCTION SOLAR-CELLS IN CONCENTRATED SUNLIGHT |
1980-01-01 |
| 320 |
A NEW PHOTO-SENSITIVE VOLTAGE-CONTROLLED DIFFERENTIAL NEGATIVE-RESISTANCE DEVICE - THE LAMBDA-BIPOLAR PHOTO-TRANSISTOR |
1980-01-01 |
| 321 |
ON THE FORWARD CURRENT-VOLTAGE CHARACTERISTICS OF P+-N-N+(N+-P-P+) EPITAXIAL DIODES |
1980-01-01 |
| 322 |
INTEGRATED ALPHA-TYPE DIFFERENTIAL NEGATIVE-RESISTANCE MOSFET DEVICE
|
1979-01-01 |
| 323 |
NEW INTEGRATED VOLTAGE-CONTROLLED NEGATIVE-RESISTANCE DEVICE LAMBDA MOSFET |
1979-01-01 |