1 |
Demonstration of a broad band spectral head-mounted display with freeform mirrors |
2014-06-02 |
2 |
Evaluation of subcortical grey matter abnormalities in patients with MRI-negative cortical epilepsy determined through structural and tensor magnetic resonance imaging |
2014-05-14 |
3 |
Thermal stability and folding kinetics analysis of disordered protein, securin |
2014-03-01 |
4 |
A Fully Integrated 8-Channel Closed-Loop Neural-Prosthetic CMOS SoC for Real-Time Epileptic Seizure Control |
2014-01-01 |
5 |
Through Diffusion Tensor Magnetic Resonance Imaging to Evaluate the Original Properties of Neural Pathways of Patients with Partial Seizures and Secondary Generalization by Individual Anatomic Reference Atlas |
2014-01-01 |
6 |
The Photocatalytic Activity and Compact Layer Characteristics of TiO2 Films Prepared Using Radio Frequency Magnetron Sputtering |
2014-01-01 |
7 |
Intelligent patent recommendation system for innovative design collaboration |
2013-11-01 |
8 |
A Simple ICI Suppression Method Utilizing Cyclic Prefix for OFDM Systems in the Presence of Phase Noise |
2013-11-01 |
9 |
Synthesis of Neisseria meningitidis Serogroup W135 Capsular Oligosaccharides for Immunogenicity Comparison and Vaccine Development |
2013-08-26 |
10 |
Investigation the Electroplating Behavior of Self Formed CuMn Barrier |
2013-08-01 |
11 |
Effects of crystallization mechanism on the electrical characteristics of green continuous-wave-laser-crystallized polycrystalline silicon thin film transistors |
2013-07-29 |
12 |
The aspect ratio effect on plasmonic properties and biosensing of bonding mode in gold elliptical nanoring arrays |
2013-06-17 |
13 |
Slab Thickness Dependence of Localized Surface Plasmon Resonance Behavior in Gold Nanorings |
2013-06-01 |
14 |
A CMOS Power-Efficient Low-Noise Current-Mode Front-End Amplifier for Neural Signal Recording |
2013-04-01 |
15 |
Synthesis of large surface area carbon xerogels for electrochemical double layer capacitors |
2013-02-01 |
16 |
Wide Tunning Range 60 GHz VCO and 40 GHz DCO Using Single Variable Inductor |
2013-02-01 |
17 |
High-performance polycrystalline silicon thin-film transistors prepared via the laser crystallization of the prepatterned channel layer on the bottom-gate structure |
2013-02-01 |
18 |
High-Performance Polycrystalline-Silicon Nanowire Thin-Film Transistors With Location-Controlled Grain Boundary via Excimer Laser Crystallization |
2012-11-01 |
19 |
Method of compensating for pixel migration in volume holographic optical disc (VHOD) |
2012-09-10 |
20 |
High Sensitivity of Dry-Type Nanowire Sensors With High-k Dielectrics for pH Detection via Capillary Atomic Force Microscope Tip Coating Technique |
2012-09-01 |
21 |
A Novel Polysilicon Field-Enhanced Nanowire Thin-Film Transistor with the TiN-Hafnia-Nitride-Vacuum-Silicon (THNVAS) Structure for Nonvolatile Memory Applications |
2012-07-01 |
22 |
High-Performance Polycrystalline Silicon Thin-Film Transistors with Two-Dimensional Location Control of the Grain Boundary via Excimer Laser Crystallization |
2012-07-01 |
23 |
High-Performance Excimer-Laser-Crystallized Polycrystalline Silicon Thin-Film Transistors with the Pre-Patterned Recessed Channel |
2012-06-01 |
24 |
Reliability improvement of InGaZnO thin film transistors encapsulated under nitrogen ambient |
2012-04-09 |
25 |
Electron dephasing in homogeneous and inhomogeneous indium tin oxide thin films |
2012-03-05 |
26 |
Synthesis of new acetal aza-cage compounds via ozonolysis of bis-endo-diol- and diacylnorbornene derivatives |
2012-03-04 |
27 |
Plasmonic Coupling in Gold Nanoring Dimers: Observation of Coupled Bonding Mode |
2012-03-01 |
28 |
Gate-all-around polycrystalline-silicon thin-film transistors with self-aligned grain-growth nanowire channels |
2012-02-27 |
29 |
Susceptor Coupling for the Uniformity and Dopant Activation Efficiency in Implanted Si Under Fixed-Frequency Microwave Anneal |
2012-02-01 |
30 |
A patent quality analysis for innovative technology and product development |
2012-01-01 |
31 |
Efficient reduction of graphene oxide catalyzed by copper |
2012-01-01 |
32 |
Growth selectivity of hexagonal-boron nitride layers on Ni with various crystal orientations |
2012-01-01 |
33 |
Responses of Rabbit Retinal Ganglion Cells to Subretinal Electrical Stimulation Using a Silicon-Based Microphotodiode Array |
2011-12-01 |
34 |
Investigation of the Galvanic Effect between RuN Barriers and Cu Seed Layers |
2011-12-01 |
35 |
A CMOS Bio-Inspired 2-D Motion Direction Sensor Based on a Direction Computation Method Derived From the Directionally Selective Ganglion Cells in the Retina |
2011-12-01 |
36 |
Direct observation of two-color pulse dynamics in passively synchronized Er and Yb mode-locked fiber lasers |
2011-11-21 |
37 |
Plasmonic Green Nanolaser Based on a Metal-Oxide-Semiconductor Structure |
2011-10-01 |
38 |
Electrical conduction processes in ZnO in a wide temperature range 20-500 K |
2011-09-15 |
39 |
Direct Formation of Wafer Scale Graphene Thin Layers on Insulating Substrates by Chemical Vapor Deposition |
2011-09-01 |
40 |
A 78 similar to 102 GHz Front-End Receiver in 90 nm CMOS Technology |
2011-09-01 |
41 |
The Design of a K-Band 0.8-V 9.2-mW Phase-Locked Loop |
2011-08-01 |
42 |
Novel Dielectric-Engineered Trapping-Charge Poly-Si-TFT Memory With a TiN-Alumina-Nitride-Vacuum-Silicon Structure |
2011-08-01 |
43 |
The Design of Double-Positive-Feedback Voltage-Controlled Oscillator |
2011-07-01 |
44 |
Amorphous-Layer Regrowth and Activation of P and As Implanted Si by Low-Temperature Microwave Annealing |
2011-07-01 |
45 |
Crosswise ridge micromixers with split and recombination helical flows |
2011-05-15 |
46 |
Dopant Activation in Single-Crystalline Germanium by Low-Temperature Microwave Annealing |
2011-02-01 |
47 |
An Intelligent System for Automated Binary Knowledge Document Classification and Content Analysis |
2011-01-01 |
48 |
Probing the binding kinetics of proinflammatory cytokine-antibody interactions using dual color fluorescence cross correlation spectroscopy |
2011-01-01 |
49 |
High Tensile Stress with Minimal Dopant Diffusion by Low Temperature Microwave Anneal |
2011-01-01 |
50 |
Effect of Annealing on the Microstructure and Electrical Property of RuN Thin Films |
2011-01-01 |
51 |
Efficient and color-saturated inverted bottom-emitting organic light-emitting devices with a semi-transparent metal-assisted electron injection layer |
2011-01-01 |
52 |
Free-electronlike diffusive thermopower of indium tin oxide thin films |
2010-12-15 |
53 |
Improvement in RF performance of 40-nm InAs-channel based HEMTs using Pt gate sinking with two-step recess processes technology |
2010-12-01 |
54 |
Templated fabrication of nanostructured Ni brush for hydrogen evolution reaction |
2010-10-01 |
55 |
Temperature dependence of resistance and thermopower of thin indium tin oxide films |
2010-09-30 |
56 |
Stability Analysis of Autonomous Ratio-Memory Cellular Nonlinear Networks for Pattern Recognition |
2010-08-01 |
57 |
Evaluation on carbon nanocapsules for supercapacitors using a titanium cavity electrode |
2010-08-01 |
58 |
RF Performance Improvement of Metamorphic High-Electron Mobility Transistor Using (In(x)Ga(1-x)As)(m)/(InAs)(n) Superlattice-Channel Structure for Millimeter-Wave Applications |
2010-07-01 |
59 |
An Integrated CMOS Front-End Receiver with a Frequency Tripler for V-Band Applications |
2010-06-01 |
60 |
Design and Analysis of a CMOS Ratio-Memory Cellular Nonlinear Network (RMCNN) Requiring No Elapsed Time |
2010-06-01 |
61 |
RmpA Regulation of Capsular Polysaccharide Biosynthesis in Klebsiella pneumoniae CG43 |
2010-06-01 |
62 |
Nanoscale p-MOS Thin-Film Transistor With TiN Gate Electrode Fabricated by Low-Temperature Microwave Dopant Activation |
2010-05-01 |
63 |
New Miniaturized Dual-Mode Dual-Band Ring Resonator Bandpass Filter With Microwave C-Sections |
2010-02-01 |
64 |
Induction of HSPA4 and HSPA14 by NBS1 overexpression contributes to NBS1-induced in vitro metastatic and transformation activity |
2010-01-06 |
65 |
Synthesis and Characterization of La(0.6)Ca(0.4)Co(0.8)Ru(0.2)O(3) for Oxygen Reduction Reaction in an Alkaline Electrolyte |
2010-01-01 |
66 |
TRANSMISSION ZERO DESIGN GRAPH FOR DUAL-MODE DUAL-BAND FILTER WITH PERIODIC STEPPED-IMPEDANCE RING RESONATOR |
2010-01-01 |
67 |
DC and RF Performance Improvement of 70 nm Quantum Well Field Effect Transistor by Narrowing Source-Drain Spacing Technology |
2010-01-01 |
68 |
Flexible inverted bottom-emitting organic light-emitting devices with a semi-transparent metal-assisted electron-injection layer |
2010-01-01 |
69 |
45-nm Planar Bulk-CMOS 23-GHz LNAs With High-Q Above-IC Inductors |
2010-01-01 |
70 |
A New Charge-Trap-Engineered Memory Device with Silicon-Oxide-Nitride-Vacuum-Silicon (SONVAS) Structure for LTPS-TFT-Based Applications |
2010-01-01 |
71 |
A Novel Transmission-Line Deembedding Technique for RF Device Characterization |
2009-12-01 |
72 |
A 3-10 GHz CMOS UWB Low-Noise Amplifier With ESD Protection Circuits |
2009-11-01 |
73 |
A Low-Power K-Band CMOS Current-Mode Up-Conversion Mixer Integrated with VCO |
2009-10-01 |
74 |
Strong green photoluminescence from In(x)Ga(1-x)N/GaN nanorod arrays |
2009-09-28 |
75 |
Design of 24-GHz 0.8-V 1.51-mW Coupling Current-Mode Injection-Locked Frequency Divider With Wide Locking Range |
2009-08-01 |
76 |
High-Performance Slow-Wave Transmission Lines With Optimized Slot-Type Floating Shields |
2009-08-01 |
77 |
A Phase-Locked Loop With Injection-Locked Frequency Multiplier in 0.18-mu m CMOS for V-Band Applications |
2009-07-01 |
78 |
A 1 V 23 GHz Low-Noise Amplifier in 45 nm Planar Bulk-CMOS Technology With High-Q Above-IC Inductors |
2009-05-01 |
79 |
Synthesis of La(0.6)Ca(0.4)Co(0.8)Ir(0.2)O(3) perovskite for bi-functional catalysis in an alkaline electrolyte |
2009-04-15 |
80 |
Evidence for beta-lactoglobulin involvement in vitamin D transport in vivo- role of the gamma-turn (Leu-Pro-Met) of beta-lactoglobulin in vitamin D binding |
2009-04-01 |
81 |
AUTOMATIC PATENT DOCUMENT SUMMARIZATION FOR COLLABORATIVE KNOWLEDGE SYSTEMS AND SERVICES |
2009-03-01 |
82 |
Current-mode design techniques in low-voltage 24-GHz RF CMOS receiver front-end |
2009-03-01 |
83 |
The Design and Analysis of a CMOS Low-Power Large-Neighborhood CNN With Propagating Connections |
2009-02-01 |
84 |
A 1-V RF-CMOS LNA design utilizing the technique of capacitive feedback matching network |
2009-01-01 |
85 |
A Novel Metamorphic High Electron Mobility Transistors with (In(x)Ga(1-x)As)(m)/(InAs)(n) Superlattice Channel Layer for Millimeter-Wave Applications |
2009-01-01 |
86 |
Dual-Band Rat-Race Coupler With Arbitrary Power Divisions Using Microwave C-Sections |
2009-01-01 |
87 |
A Novel LTPS-TFT-Based Charge-Trapping Memory Device with Field-Enhanced Nanowire Structure |
2009-01-01 |
88 |
The Design of Low LO-Power 60-GHz CMOS Quadrature-Balanced Self-Switching Current-Mode Mixer |
2008-10-01 |
89 |
Design and analysis of CMOS subharmonic injection-locked frequency triplers |
2008-08-01 |
90 |
Mechanical alloying preparation of La0.6Ca0.4CoIr0.25O3.5-delta as a bifunctional electrocatalyst in alkaline electrolyte |
2008-01-01 |
91 |
The design of integrated 3-GHz to 11-GHz CMOS transmitter for full-band ultra-wideband (UWB) applications |
2008-01-01 |
92 |
A 1.5-V 3 similar to 10-GHz 0.18-mu m CMOS Frequency Synthesizer for MB-OFDM UWB Applications |
2008-01-01 |
93 |
Modified resistive switching behavior of ZrO2 memory films based on the interface layer formed by using Ti top electrode |
2007-11-01 |
94 |
A neuromorphic chip that imitates the ON brisk transient ganglion cell set in the retinas of rabbits |
2007-09-01 |
95 |
Design and analysis of a millimeter-wave direct injection-locked frequency divider with large frequency locking range |
2007-08-01 |
96 |
Fabrication of a miniature CMOS-based optical biosensor |
2007-06-15 |
97 |
Effect of top electrode material on resistive switching properties of ZrO2 film memory devices |
2007-05-01 |
98 |
Microstructure and recording mechanism of Ge/Au bilayer media for write-once optical disc |
2007-04-09 |
99 |
Structural and optical properties of ZnMgO nanostructures formed by Mg in-diffused ZnO nanowires |
2007-04-01 |
100 |
A 24-GHz CMOS current-mode power amplifier with high PAE and output power |
2007-01-01 |
101 |
A CMOS expansion/contraction motion sensor with a retinal processing circuit for Z-motion detection applications |
2007-01-01 |
102 |
Silver-carbon nanocapsule electrocatalyst for oxygen reduction reaction |
2007-01-01 |
103 |
Bistable resistive switching in Al2O3 memory thin films |
2007-01-01 |
104 |
Photodissociation dynamics of fluorobenzene (C6H5F) at 157 and 193 nm: Branching ratios and distributions of kinetic energy |
2006-10-14 |
105 |
Band gap engineering and stimulated emission of ZnMgO nanowires |
2006-07-03 |
106 |
Direct observation of structure effect on ferromagnetism in Zn1-xCoxO nanowires |
2006-06-01 |
107 |
Discovery of different types of inhibition between the human and Thermotoga maritima alpha-fucosidases by fuconojirimycin-based derivatives |
2006-05-09 |
108 |
Design and fabrication of a photosensing nanodevice structure with CdSe and Au nanoparticles on a silicon chip |
2006-05-01 |
109 |
Luminescence of selective area growth of epitaxial ZnO nanowires and random-growth-oriented nanobelts |
2006-03-14 |
110 |
Orbital susceptibilities of PbSe quantum dots |
2006-02-14 |
111 |
A poly-Si thin-film transistor with the in situ vacuum gaps under the T-shaped-gated electrode |
2006-01-01 |
112 |
The substrate effect on the in-plane orientation of vertically well-aligned ZnO nanorods grown on ZnO buffer layers |
2005-12-01 |
113 |
Optimal design of CMOS pseudoactive pixel sensor (PAPS) structure for low-dark-current and large-array-size imager applications |
2005-10-01 |
114 |
Photodissociation dynamics of formyl fluoride (HFCO) at 193 nm: Branching ratios and distributions of kinetic energy |
2005-08-15 |
115 |
The design of wideband and low-power CMOS active polyphase filter and its application in RF double-quadrature receivers |
2005-05-01 |
116 |
Stimulated emission and lasing of random-growth oriented ZnO nanowires |
2005-03-15 |
117 |
Analysis and design of a CMOS angular velocity- and direction-selective rotation sensor with a retinal processing circuit |
2004-12-01 |
118 |
Molecular elimination in photolysis of fluorobenzene at 193 nm: Internal energy of HF determined with time-resolved Fourier-transform spectroscopy |
2004-11-08 |
119 |
A new CMOS pixel structure for low-dark-current and large-array-size still imager applications |
2004-11-01 |
120 |
A low-photocuffent CMOS retinal focal-plane sensor with a pseudo-BJT smoothing network and an adaptive current Schmitt trigger for scanner applications |
2004-08-01 |
121 |
Detection of serum uric acid using the optical polymeric enzyme biochip system |
2004-07-15 |
122 |
The design of a novel complementary metal oxide semiconductor detection system for biochemical luminescence |
2004-05-15 |
123 |
Photolysis of oxalyl chloride (ClCO)(2) at 193 nm: Emission of CO(v <= 6, J <= 60) detected with time-resolved Fourier-transform spectroscopy |
2004-04-15 |
124 |
Implantable neuromorphic vision chips |
2004-03-18 |
125 |
A 5-GHz CMOS double-quadrature receiver front-end with single-stage quadrature generator |
2004-03-01 |
126 |
Design, optimization, and performance analysis of new photodiode structures for CMOS active-pixel-sensor (APS) imager applications |
2004-02-01 |
127 |
New current-mode wave-pipelined architectures for high-speed analog-to-digital converters |
2004-01-01 |
128 |
Analysis and design of a new SRAM memory cell based on vertical lambda bipolar transistor |
2003-09-01 |
129 |
CMOS chip as luminescent sensor for biochemical reactions |
2003-06-01 |
130 |
New high-speed low-power current-mode CMOS sense amplifier |
2003-05-01 |
131 |
Photolysis of oxalyl chloride (ClCO)(2) at 248 nm: Emission of CO(v '<= 3, J '<= 51) detected with time-resolved Fourier transform spectroscopy |
2003-04-10 |
132 |
A CMOS Focal-Plane Motion Sensor With BJT-Based Retinal Smoothing Network and Modified Correlation-Based Algorithm |
2002-12-01 |
133 |
A learnable cellular neural network structure with ratio memory for image processing |
2002-12-01 |
134 |
Substrate-triggered ESD clamp devices for use in power-rail ESD clamp circuits |
2002-05-01 |
135 |
A 2-V low-power CMOS direct-conversion quadrature modulator with integrated quadrature voltage-controlled oscillator and RF amplifier for GHz RF transmitter applications |
2002-02-01 |
136 |
New CMOS 2V low-power IF fully differential Rm-C bandpass amplifier for RF wireless receivers |
2001-12-01 |
137 |
Effect of montmorillonite on thermal and moisture absorption properties of polyimide of different chemical structures |
2001-08-15 |
138 |
Synthesis of novel acetal thia-cage compounds |
2001-06-29 |
139 |
In the blink of a silicon eye |
2001-05-01 |
140 |
On-chip ESD protection design by using polysilicon diodes in CMOS process |
2001-04-01 |
141 |
A new compact neuron-bipolar junction transistor (nu BJT) cellular neural network (CNN) structure with programmable large neighborhood symmetric templates for image processing |
2001-01-01 |
142 |
The design of a 2-V 900-MHz CMOS bandpass amplifier |
2001-01-01 |
143 |
ESD protection design on analog pin with very low input capacitance for high-frequency or current-mode applications |
2000-08-01 |
144 |
Fused-ring and linking group effects of proton donors and accepters on simple H-bonded liquid crystals |
2000-08-01 |
145 |
A new observation of band-to-band tunneling induced hot-carrier stress using charge-pumping technique |
2000-03-01 |
146 |
A new charge-pumping technique for profiling the interface-states and oxide-trapped charges in MOSFET's |
2000-02-01 |
147 |
An improved BJT-based silicon retina with tunable image smoothing capability |
1999-06-01 |
148 |
A new quasi-2-D model for hot-carrier band-to-band tunneling current |
1999-06-01 |
149 |
A new I-V model considering the impact-ionization effect initiated by the DIGBL current for the intrinsic n-channel poly-Si TFT's |
1999-04-01 |
150 |
A novel transient simulation for 3-D multilevel interconnections on complex topography |
1999-04-01 |
151 |
Synthesis of pentaoxa[5]peristylanes |
1999-03-05 |
152 |
A 2-D velocity- and direction-selective sensor with BJT-based silicon retina and temporal zero-crossing detector |
1999-02-01 |
153 |
A new true-single-phase-clocking BiCMOS dynamic pipelined logic family for high-speed, low-voltage pipelined system applications |
1999-01-01 |
154 |
An analytical grain-barrier height model and its characterization for intrinsic poly-Si thin-film transistor |
1998-10-01 |
155 |
A 1.5-V differential cross-coupled bootstrapped BiCMOS logic for low-voltage applications |
1998-10-01 |
156 |
An efficient transient modeling for 3-D multilevel interconnections in a stratified dielectric medium |
1998-10-01 |
157 |
High-performance CMOS buffered gate modulation input (BGMI) readout circuits for IR FPA |
1998-08-01 |
158 |
A parallel structure for CMOS four-quadrant analog multipliers and its application to a 2-GHz RF downconversion mixer |
1998-06-01 |
159 |
Multiple-cell square-type layout design for output transistors in submicron CMOS technology to save silicon area |
1998-06-01 |
160 |
Computer-generated holographic diffuser for color mixing |
1998-05-15 |
161 |
Electron-phonon scattering times in crystalline disordered titanium alloys between 3 and 15 K |
1998-05-01 |
162 |
A novel modeling technique for efficiently computing 3-D capacitances of VLSI multilevel interconnections BFEM |
1998-01-01 |
163 |
A new simulation model for plasma ashing process-induced oxide degradation in MOSFET |
1998-01-01 |
164 |
Synthesis of 3,11-dioxatetracyclo[6.3.0.0(2,6).0(5,9)]undecanes and 3,5,7-trioxapentacyclo[7.2.1.0(2,8).0(4,11).0(6,10)]dodecane |
1997-12-01 |
165 |
A new method for extracting the channel-length reduction and the gate-voltage-dependent series resistance of counter-implanted p-MOSFET's |
1997-12-01 |
166 |
A new method for extracting the counter-implanted channel profile of enhancement-mode p-MOSFET's |
1997-12-01 |
167 |
Focal-plane-arrays and CMOS readout techniques of infrared imaging systems |
1997-08-01 |
168 |
A new cryogenic CMOS readout structure for infrared focal plane array |
1997-08-01 |
169 |
A novel charge-pumping method for extracting the lateral distributions of interface-trap and effective oxide-trapped charge densities in MOSFET devices |
1997-05-01 |
170 |
The pentaoxa[5] peristylanes. A novel oxa-cage system |
1997-04-07 |
171 |
The design of rotation-invariant pattern recognition using the silicon retina |
1997-04-01 |
172 |
The threshold-voltage model of MOSFET devices with localized interface charge |
1997-03-01 |
173 |
Ozonolysis of 2-endo-7-anti-diacylnorbornenes. A new entry for the synthesis of 2,4,6,13-tetraoxapentacyclo[5.5.1.0(3,11).0(5,9).0(8,12)]tridecanes |
1997-02-17 |
174 |
The design of a 3-V 900-MHz CMOS bandpass amplifier |
1997-02-01 |
175 |
A gate-coupled PTLSCR/NTLSCR ESD protection circuit for deep-submicron low-voltage CMOS IC's |
1997-01-01 |
176 |
Low-temperature characteristics of well-type guard rings in epitaxial CMOS |
1996-12-01 |
177 |
Capacitor-couple ESD protection circuit for deep-submicron low-voltage CMOS ASIC |
1996-09-01 |
178 |
A CMOS ratio-independent and gain-insensitive algorithmic analog-to-digital converter |
1996-08-01 |
179 |
Synthesis of tetraacetal tetraoxa-cage compounds with alkyl substituents at different sites of the oxa-cage skeleton |
1996-06-01 |
180 |
A new extraction algorithm for the metallurgical channel length of conventional and LDD MOSFET's |
1996-06-01 |
181 |
A novel two-step etching process for reducing plasma-induced oxide damage |
1996-05-01 |
182 |
The design of CMOS continuous-time VHF current and voltage-mode lowpass filters with Q-enhancement circuits |
1996-05-01 |
183 |
Design techniques for VHF/UHF high-Q tunable bandpass filters using simple CMOS inverter-based transresistance amplifiers |
1996-05-01 |
184 |
Complementary-LVTSCR ESD protection circuit for submicron CMOS VLSI/ULSI |
1996-04-01 |
185 |
Synthesis of novel triacetal trioxa-cage compounds by ozonolysis of bicyclo[2.2.1]heptenes and bicyclo[2.2.2]octenes |
1996-04-01 |
186 |
A design strategy for short gate length SOI MESFETs |
1996-03-01 |
187 |
A novel method for extracting the metallurgical channel length of MOSFET's using a single device |
1996-03-01 |
188 |
Analog electronic cochlea design using multiplexing switched-capacitor circuits |
1996-01-01 |
189 |
CMOS current-mode neural associative memory design with on-chip learning |
1996-01-01 |
190 |
Synthesis of novel triacetal oxa-cage compounds |
1996-01-01 |
191 |
A 2-D ANALYTIC MODEL FOR THE THRESHOLD-VOLTAGE OF FULLY DEPLETED SHORT GATE-LENGTH SI-SOI MESFETS |
1995-12-01 |
192 |
A CMOS CURRENT-MODE DESIGN OF MODIFIED LEARNING-VECTOR-QUANTIZATION NEURAL NETWORKS |
1995-09-01 |
193 |
A NEW SIMPLIFIED THRESHOLD-VOLTAGE MODEL FOR N-MOSFETS WITH NONUNIFORMLY DOPED SUBSTRATE AND ITS APPLICATION TO MOSFETS MINIATURIZATION |
1995-08-01 |
194 |
A NEW STRUCTURE OF THE 2-D SILICON RETINA |
1995-08-01 |
195 |
COMPLEMENTARY-SCR ESD PROTECTION CIRCUIT WITH INTERDIGITATED FINGER-TYPE LAYOUT FOR INPUT PADS OF SUBMICRON CMOS ICS |
1995-07-01 |
196 |
A SIMPLE AND ACCURATE SIMULATION TECHNIQUE FOR FLASH EEPROM WRITING AND ITS RELIABILITY ISSUE |
1995-07-01 |
197 |
A NEW CONSTANT-FIELD SCALING THEORY FOR MOSFETS |
1995-07-01 |
198 |
MODELING THE POSITIVE-FEEDBACK REGENERATIVE PROCESS OF CMOS LATCHUP BY A POSITIVE TRANSIENT POLE METHOD .1. THEORETICAL DERIVATION |
1995-06-01 |
199 |
MODELING THE POSITIVE-FEEDBACK REGENERATIVE PROCESS OF CMOS LATCHUP BY A POSITIVE TRANSIENT POLE METHOD .2. QUANTITATIVE-EVALUATION |
1995-06-01 |
200 |
CMOS CURRENT-MODE IMPLEMENTATION OF SPATIOTEMPORAL PROBABILISTIC NEURAL NETWORKS FOR SPEECH RECOGNITION |
1995-06-01 |
201 |
A CMOS TRANSISTOR-ONLY 8-B 4.5-MS/S PIPELINED ANALOG-TO-DIGITAL CONVERTER USING FULLY-DIFFERENTIAL CURRENT-MODE CIRCUIT TECHNIQUES |
1995-05-01 |
202 |
A NOVEL EXTRACTION TECHNIQUE FOR THE EFFECTIVE CHANNEL-LENGTH OF MOSFET DEVICES |
1995-05-01 |
203 |
A NEW GATE CURRENT SIMULATION TECHNIQUE CONSIDERING SI/SIO2 INTERFACE-TRAP GENERATION |
1995-04-01 |
204 |
LATERAL TITANIUM SILICIDE GROWTH AND ITS SUPPRESSION USING THE A-SI/TI BILAYER STRUCTURE |
1995-03-01 |
205 |
THE EFFECTS OF IMPURITY BANDS ON THE ELECTRICAL CHARACTERISTICS OF METAL-SEMICONDUCTOR OHMIC CONTACTS |
1995-01-01 |
206 |
NEW DESIGN TECHNIQUES FOR A COMPLEMENTARY METAL-OXIDE-SEMICONDUCTOR CURRENT READOUT INTEGRATED-CIRCUIT FOR INFRARED DETECTOR ARRAYS |
1995-01-01 |
207 |
REALIZATIONS OF HIGH-ORDER SWITCHED-CAPACITOR FILTERS USING MULTIPLEXING TECHNIQUE |
1994-12-01 |
208 |
A 10-B 225-MHZ CMOS DIGITAL-TO-ANALOG CONVERTER (DAC) WITH THRESHOLD-VOLTAGE COMPENSATED CURRENT SOURCES |
1994-11-01 |
209 |
NEW DESIGN METHODOLOGY AND NEW DIFFERENTIAL LOGIC-CIRCUITS FOR THE IMPLEMENTATION OF TERNARY LOGIC SYSTEMS IN CMOS-VLSI WITHOUT PROCESS MODIFICATION |
1994-06-01 |
210 |
A SELF-CONSISTENT CHARACTERIZATION METHODOLOGY FOR SCHOTTKY-BARRIER DIODES AND OHMIC CONTACTS |
1994-04-01 |
211 |
TRANSIENT ANALYSIS OF SUBMICRON CMOS LATCHUP WITH A PHYSICAL CRITERION |
1994-02-01 |
212 |
A CHARACTERIZATION TECHNIQUE FOR THE DEGRADATION CHARACTERISTICS OF TI/SI SCHOTTKY-BARRIER DIODES AND OHMIC CONTACTS AFTER THERMAL SILICIDATION |
1994-02-01 |
213 |
CMOS ON-CHIP ELECTROSTATIC DISCHARGE PROTECTION CIRCUIT USING 4-SCR STRUCTURES WITH LOW ESD-TRIGGER VOLTAGE |
1994-01-01 |
214 |
NOVEL CHARACTERISTICS OF THE POLYSILICON HIGH-LOW-EMITTER (PHL-EMITTER) BIPOLAR-TRANSISTOR HIGH-CURRENT GAIN AND ZERO ACTIVATION-ENERGY |
1994-01-01 |
215 |
A NOVEL PHL-EMITTER BIPOLAR-TRANSISTOR - FABRICATION AND CHARACTERIZATION |
1993-10-01 |
216 |
A NEW 2D ANALYTIC THRESHOLD-VOLTAGE MODEL FOR FULLY DEPLETED SHORT-CHANNEL SOI MOSFETS |
1993-09-01 |
217 |
THE DESIGN OF FULLY DIFFERENTIAL CMOS OPERATIONAL-AMPLIFIERS WITHOUT EXTRA COMMON-MODE FEEDBACK-CIRCUITS |
1993-09-01 |
218 |
A NEW GRID-GENERATION METHOD FOR 2-D SIMULATION OF DEVICES WITH NONPLANAR SEMICONDUCTOR SURFACE |
1993-09-01 |
219 |
DESIGN AND APPLICATION OF PIPELINED DYNAMIC CMOS TERNARY LOGIC AND SIMPLE TERNARY DIFFERENTIAL LOGIC |
1993-08-01 |
220 |
A NEW IV MODEL FOR SHORT GATE-LENGTH MESFETS |
1993-04-01 |
221 |
ANALYSIS AND DESIGN OF A NEW RACE-FREE 4-PHASE CMOS LOGIC |
1993-01-01 |
222 |
A NEW OXIDATION-RESISTANT COSI2 PROCESS FOR SELF-ALIGNED SILICIDATION (SALICIDE) TECHNOLOGY |
1993-01-01 |
223 |
A NEW METHODOLOGY FOR 2-DIMENSIONAL NUMERICAL-SIMULATION OF SEMICONDUCTOR-DEVICES |
1992-12-01 |
224 |
HIGH-PRECISION CURVATURE-COMPENSATED CMOS BAND-GAP VOLTAGE AND CURRENT REFERENCES |
1992-09-01 |
225 |
NEW FAST FIXED-DELAY SIZING ALGORITHM FOR HIGH-PERFORMANCE CMOS COMBINATIONAL LOGIC-CIRCUITS AND ITS APPLICATIONS |
1992-09-01 |
226 |
THE PROCESS WINDOW OF A-SI/TI BILAYER METALLIZATION FOR AN OXIDATION-RESISTANT AND SELF-ALIGNED TISI2 PROCESS |
1992-08-01 |
227 |
A NEW 2-DIMENSIONAL MODEL FOR THE POTENTIAL DISTRIBUTION OF SHORT GATE-LENGTH MESFETS AND ITS APPLICATIONS |
1992-08-01 |
228 |
PHYSICAL MODEL FOR CHARACTERIZING AND SIMULATING A FLOTOX EEPROM DEVICE |
1992-05-01 |
229 |
A NEW ON-CHIP ESD PROTECTION CIRCUIT WITH DUAL PARASITIC SCR STRUCTURES FOR CMOS VLSI |
1992-03-01 |
230 |
A NEW SIMPLIFIED 2-DIMENSIONAL MODEL FOR THE THRESHOLD VOLTAGE OF MOSFETS WITH NONUNIFORMLY DOPED SUBSTRATE |
1991-06-01 |
231 |
A NEW METHODOLOGY FOR DEVELOPING A FAST 2-DIMENSIONAL MOSFET DEVICE SIMULATOR |
1991-06-01 |
232 |
EFFICIENT TECHNIQUES IN THE SIZING AND CONSTRAINED OPTIMIZATION OF CMOS COMBINATIONAL LOGIC-CIRCUITS |
1991-05-01 |
233 |
NEW PHYSICAL TIMING MODELS OF BIPOLAR NONSATURATION LOGIC USING CURRENT DOMAIN ANALYSIS TECHNIQUE |
1991-04-01 |
234 |
PHYSICAL TIMING MODELS AND DESIGN METHODOLOGY OF BIPOLAR NONTHRESHOLD LOGIC-CIRCUITS |
1990-12-01 |
235 |
REALIZATIONS OF IIR/FIR AND N-PATH FILTERS USING A NOVEL SWITCHED-CAPACITOR TECHNIQUE |
1990-10-01 |
236 |
DELAY MODELS AND SPEED IMPROVEMENT TECHNIQUES FOR RC TREE INTERCONNECTIONS AMONG SMALL-GEOMETRY CMOS INVERTERS |
1990-10-01 |
237 |
AN ANALYTIC SATURATION MODEL FOR DRAIN AND SUBSTRATE CURRENTS OF CONVENTIONAL AND LDD MOSFETS |
1990-07-01 |
238 |
EXCELLENT THERMAL-STABILITY OF COBALT ALUMINUM-ALLOY SCHOTTKY CONTACTS ON GAAS SUBSTRATES |
1990-07-01 |
239 |
MOS DEVICE PARAMETER OPTIMIZATION BASED ON TRANSIENT TRAJECTORY CONSIDERATIONS |
1990-05-01 |
240 |
A QUASI-2-DIMENSIONAL ANALYTICAL MODEL FOR THE TURN-ON CHARACTERISTICS OF POLYSILICON THIN-FILM TRANSISTORS |
1990-03-01 |
241 |
THE EFFECT OF GATE ELECTRODES USING TUNGSTEN SILICIDES AND OR POLYSILICON ON THE DIELECTRIC CHARACTERISTICS OF VERY THIN OXIDES |
1990-03-01 |
242 |
A NEW ALGORITHM FOR STEADY-STATE 2-D NUMERICAL-SIMULATION OF MOSFETS |
1990-02-01 |
243 |
REALIZATIONS OF IIR FIR AND N-PATH FILTERS USING A NOVEL SWITCHED-CAPACITOR TECHNIQUE |
1990-01-01 |
244 |
ANALYSIS AND MODELING OF INITIAL DELAY TIME AND ITS IMPACT ON PROPAGATION DELAY OF CMOS LOGIC GATES |
1989-10-01 |
245 |
A NEW GENERAL-METHOD TO MODEL SIGNAL TIMING OF E D NMOS LOGIC |
1989-10-01 |
246 |
A NEW CRITERION FOR TRANSIENT LATCHUP ANALYSIS IN BULK CMOS |
1989-07-01 |
247 |
A NEW TWIN-WELL CMOS PROCESS USING NITRIDIZED-OXIDE-LOCOS (NOLOCOS) ISOLATION TECHNOLOGY |
1989-07-01 |
248 |
PHYSICAL TIMING MODELS OF SMALL-GEOMETRY CMOS INVERTERS AND MULTI-INPUT NAND NOR GATES AND THEIR APPLICATIONS |
1989-06-01 |
249 |
CMOS NONTHRESHOLD LOGIC (NTL) AND CASCODE NONTHRESHOLD LOGIC (CNTL) FOR HIGH-SPEED APPLICATIONS |
1989-06-01 |
250 |
AN IMPROVED PROPAGATION-DELAY-TIME FORMULA FOR THE SUB-MICRON N-MOS INVERTER |
1989-06-01 |
251 |
NOVEL DYNAMIC CMOS LOGIC FREE FROM PROBLEMS OF CHARGE SHARING AND CLOCK SKEW |
1989-05-01 |
252 |
THE EFFECT OF LAYOUT, SUBSTRATE WELL BIASES, AND TRIGGERING SOURCE LOCATION ON LATCHUP TRIGGERING CURRENTS IN BULK CMOS CIRCUITS |
1989-04-01 |
253 |
COBALT SILICIDE INTERCONNECTION FROM A SI/W/CO TRILAYER STRUCTURE |
1989-01-01 |
254 |
LOW-POWER DYNAMIC TERNARY LOGIC |
1988-12-01 |
255 |
A NEW EXPERIMENTAL-METHOD TO DETERMINE THE SATURATION VOLTAGE OF A SMALL-GEOMETRY MOSFET |
1988-09-01 |
256 |
A NEW LATERAL GROWTH FREE FORMATION TECHNIQUE FOR TITANIUM SILICIDE USING THE SI/W/TI TRILAYER STRUCTURE |
1988-09-01 |
257 |
INTEGRAL-EQUATION SOLUTION FOR HYPERBOLIC HEAT-CONDUCTION WITH SURFACE RADIATION |
1988-05-01 |
258 |
TIMING MACROMODELS FOR CMOS STATIC SET RESET LATCHES AND THEIR APPLICATIONS |
1988-05-01 |
259 |
A NEW METHOD FOR DETERMINING THE TERMINAL SERIES RESISTANCES AND HIGH-INJECTION COEFFICIENT OF BIPOLAR-TRANSISTORS IN CMOS INTEGRATED-CIRCUITS FOR COMPUTER-AIDED CIRCUIT MODELING |
1988-05-01 |
260 |
GENERAL EXPERIMENTAL-METHOD OF PARAMETER EXTRACTION FOR CMOS TIMING MACROMODELS |
1988-04-01 |
261 |
THE EFFECTS OF THERMAL SILICIDATION ON THE CURRENT TRANSPORT CHARACTERISTICS OF TI/(111)SI SCHOTTKY-BARRIER CONTACTS |
1988-01-01 |
262 |
A NEW APPROACH TO ANALYTICALLY SOLVING THE TWO-DIMENSIONAL POISSON EQUATION AND ITS APPLICATION IN SHORT-CHANNEL MOSFET MODELING |
1987-09-01 |
263 |
A SIMPLIFIED COMPUTER-ANALYSIS FOR NORMAL-WELL GUARD RING EFFICIENCY IN CMOS CIRCUITS |
1987-08-01 |
264 |
THE DIELECTRIC RELIABILITY OF INTRINSIC THIN SIO2-FILMS THERMALLY GROWN ON A HEAVILY DOPED SI SUBSTRATE - CHARACTERIZATION AND MODELING |
1987-07-01 |
265 |
TRANSPORT-PROPERTIES OF THERMAL OXIDE-FILMS GROWN ON POLYCRYSTALLINE SILICON - MODELING AND EXPERIMENTS |
1987-07-01 |
266 |
AN ANALYTIC IV MODEL FOR LIGHTLY DOPED DRAIN (LDD) MOSFET DEVICES |
1987-06-01 |
267 |
SUPERIOR CHARACTERISTICS OF THERMAL OXIDE LAYERS GROWN ON AMORPHOUS-SILICON FILMS |
1987-04-27 |
268 |
THE DISTORTION OF THE INTERFACE-STATE SPECTRUM DUE TO NONEQUILIBRIUM OCCUPANCY OF THE INTERFACE STATES AT THE METAL-SEMICONDUCTOR INTERFACE |
1987-04-15 |
269 |
THE EFFECTS OF THERMAL NITRIDATION CONDITIONS ON THE RELIABILITY OF THIN NITRIDED OXIDE-FILMS |
1987-04-01 |
270 |
A NEW STRUCTURE-ORIENTED MODEL FOR WELL RESISTANCE IN CMOS LATCHUP STRUCTURES |
1987-04-01 |
271 |
A SIMPLE INTERFACIAL-LAYER MODEL FOR THE NONIDEAL IV AND C-V CHARACTERISTICS OF THE SCHOTTKY-BARRIER DIODE |
1987-04-01 |
272 |
THE ANALYSIS AND DESIGN OF CMOS MULTIDRAIN LOGIC AND STACKED MULTIDRAIN LOGIC |
1987-02-01 |
273 |
A SIMPLE TECHNIQUE FOR MEASURING THE INTERFACE-STATE DENSITY OF THE SCHOTTKY-BARRIER DIODES USING THE CURRENT-VOLTAGE CHARACTERISTICS |
1987-01-01 |
274 |
A CHARACTERIZATION MODEL FOR CONSTANT CURRENT STRESSED VOLTAGE-TIME CHARACTERISTICS OF THIN THERMAL OXIDES GROWN ON SILICON SUBSTRATE |
1986-12-01 |
275 |
A NEW OXIDATION-RESISTANT SELF-ALIGNED TISI2 PROCESS |
1986-11-01 |
276 |
AN ENVIRONMENT-INSENSITIVE TRILAYER STRUCTURE FOR TITANIUM SILICIDE FORMATION |
1986-11-01 |
277 |
A CHARACTERIZATION MODEL FOR RAMP-VOLTAGE-STRESSED IV CHARACTERISTICS OF THIN THERMAL OXIDES GROWN ON SILICON SUBSTRATE |
1986-10-01 |
278 |
CORRELATIONS BETWEEN CMOS LATCH-UP CHARACTERISTICS AND SUBSTRATE STRUCTURE PARAMETERS |
1986-10-01 |
279 |
AN EFFICIENT METHOD FOR CALCULATING THE DC TRIGGERING CURRENTS IN CMOS LATCH-UP |
1986-05-01 |
280 |
A NEW ANALYTICAL 3-DIMENSIONAL MODEL FOR SUBSTRATE RESISTANCE IN CMOS LATCHUP STRUCTURES |
1986-04-01 |
281 |
AN ANALYTIC THRESHOLD-VOLTAGE MODEL FOR SHORT-CHANNEL ENHANCEMENT MODE N-CHANNEL MOSFETS WITH DOUBLE BORON CHANNEL IMPLANTATION |
1986-04-01 |
282 |
AN EFFICIENT TWO-DIMENSIONAL MODEL FOR CMOS LATCHUP ANALYSIS |
1986-04-01 |
283 |
SUPERIOR CHARACTERISTICS OF NITRIDIZED THERMAL OXIDE GROWN ON POLYCRYSTALLINE SILICON |
1986-01-13 |
284 |
THE LAMBDA-BIPOLAR PHOTOTRANSISTOR ANALYSIS AND APPLICATIONS |
1985-12-01 |
285 |
AN ACCURATE AND ANALYTIC THRESHOLD-VOLTAGE MODEL FOR SMALL-GEOMETRY MOSFETS WITH SINGLE-CHANNEL ION-IMPLANTATION IN VLSI |
1985-12-01 |
286 |
AN ACCURATE MOBILITY MODEL FOR THE I-V-CHARACTERISTICS OF N-CHANNEL ENHANCEMENT-MODE MOSFETS WITH SINGLE-CHANNEL BORON IMPLANTATION |
1985-12-01 |
287 |
A NEW THRESHOLD-VOLTAGE MODEL FOR SMALL-GEOMETRY BURIED-CHANNEL MOSFETS |
1985-12-01 |
288 |
MOBILITY MODELS FOR THE IV CHARACTERISTICS OF BURIED-CHANNEL MOSFETS |
1985-01-01 |
289 |
AN EFFICIENT TIMING MODEL FOR CMOS COMBINATIONAL LOGIC GATES |
1985-01-01 |
290 |
A NEW APPROACH TO MODEL CMOS LATCHUP |
1985-01-01 |
291 |
A SIMPLE PUNCHTHROUGH VOLTAGE MODEL FOR SHORT-CHANNEL MOSFETS WITH SINGLE CHANNEL IMPLANTATION IN VLSI |
1985-01-01 |
292 |
A NEW METHOD FOR COMPUTER-AIDED OPTIMIZATION OF SOLAR-CELL STRUCTURES |
1985-01-01 |
293 |
A STRUCTURE-ORIENTED MODEL FOR DETERMINING THE SUBSTRATE SPREADING RESISTANCE IN BULK CMOS LATCH-UP PATHS AND ITS APPLICATION IN HOLDING CURRENT PREDICTION |
1985-01-01 |
294 |
THE METAL-INSULATOR-SEMICONDUCTOR-SWITCH (MISS) DEVICE USING THERMAL NITRIDE FILM AS THE TUNNELING INSULATOR |
1984-01-01 |
295 |
AN ANALYTIC AND ACCURATE MODEL FOR THE THRESHOLD VOLTAGE OF SHORT CHANNEL MOSFETS IN VLSI |
1984-01-01 |
296 |
A NEW DYNAMIC RANDOM-ACCESS MEMORY CELL USING A BIPOLAR MOS COMPOSITE STRUCTURE |
1983-01-01 |
297 |
A NEW COMPUTER-AIDED SIMULATION-MODEL FOR POLYCRYSTALLINE SILICON FILM RESISTORS |
1983-01-01 |
298 |
A NEW INTERNAL OVERVOLTAGE PROTECTION STRUCTURE FOR THE BIPOLAR POWER TRANSISTOR |
1983-01-01 |
299 |
A NEW HIGH-POWER VOLTAGE-CONTROLLED DIFFERENTIAL NEGATIVE-RESISTANCE DEVICE - THE LAMBDA-BIPOLAR POWER TRANSISTOR |
1983-01-01 |
300 |
THE EFFECT OF THE MINORITY-CARRIER DISTRIBUTION ON THE THRESHOLD VOLTAGE OF A MOSFET |
1983-01-01 |
301 |
A COMPUTER-AIDED SIMULATION-MODEL FOR THE IV CHARACTERISTIC OF M-N-P SILICON SCHOTTKY-BARRIER DIODES PRODUCED BY USE OF LOW-ENERGY ARSENIC-ION IMPLANTATION |
1983-01-01 |
302 |
OXIDATION RESISTANCE CHARACTERISTICS OF SILICON THERMAL NITRIDE FILMS |
1983-01-01 |
303 |
TEMPERATURE COEFFICIENTS OF THE OPEN-CIRCUIT VOLTAGE OF P-N-JUNCTION SOLAR-CELLS |
1982-01-01 |
304 |
GROWTH-KINETICS OF SILICON THERMAL NITRIDATION |
1982-01-01 |
305 |
INTERFACIAL LAYER-THERMIONIC-DIFFUSION THEORY FOR THE SCHOTTKY-BARRIER DIODE |
1982-01-01 |
306 |
DOPING AND TEMPERATURE DEPENDENCES OF MINORITY-CARRIER DIFFUSION LENGTH AND LIFETIME DEDUCED FROM THE SPECTRAL RESPONSE MEASUREMENTS OF P-N-JUNCTION SOLAR-CELLS |
1982-01-01 |
307 |
THE BIAS-DEPENDENT PHOTOELECTRIC BARRIER HEIGHT OF THE SCHOTTKY DIODES |
1981-01-01 |
308 |
THE NEW GENERAL REALIZATION-THEORY OF FET-LIKE INTEGRATED VOLTAGE-CONTROLLED NEGATIVE DIFFERENTIAL RESISTANCE DEVICES |
1981-01-01 |
309 |
CHARACTERIZATIONS AND DESIGN CONSIDERATIONS OF LAMBDA BIPOLAR-TRANSISTOR (LBT) |
1981-01-01 |
310 |
AN ANALYTICAL MODEL FOR HIGH-LOW-EMITTER (HLE) SOLAR-CELLS IN CONCENTRATED SUNLIGHT |
1981-01-01 |
311 |
BARRIER HEIGHT ENHANCEMENT OF THE SCHOTTKY-BARRIER DIODE USING A THIN UNIFORMLY-DOPED SURFACE-LAYER |
1981-01-01 |
312 |
INTERFACIAL LAYER THEORY OF THE SCHOTTKY-BARRIER DIODES |
1980-01-01 |
313 |
BARRIER HEIGHT REDUCTION OF THE SCHOTTKY-BARRIER DIODE USING A THIN HIGHLY DOPED SURFACE-LAYER |
1980-01-01 |
314 |
CURRENT GAIN OF THE BIPOLAR-TRANSISTOR |
1980-01-01 |
315 |
AN ANALYSIS AND THE FABRICATION TECHNOLOGY OF THE LAMBDA BIPOLAR-TRANSISTOR |
1980-01-01 |
316 |
GENERALIZED THEORY AND REALIZATION OF A VOLTAGE-CONTROLLED NEGATIVE-RESISTANCE MOS DEVICE (LAMBDA-MOSFET) |
1980-01-01 |
317 |
THEORETICAL AND EXPERIMENTAL CHARACTERIZATION OF THE DUAL-BASE TRANSISTOR (DUBAT) |
1980-01-01 |
318 |
CURRENT GAIN OF HIGH-LOW JUNCTION EMITTER BIPOLAR-TRANSISTOR STRUCTURE WITH UNIFORMLY DOPED PROFILES |
1980-01-01 |
319 |
THE OPEN-CIRCUIT VOLTAGE OF BACK-SURFACE-FIELD (BSF) P-N-JUNCTION SOLAR-CELLS IN CONCENTRATED SUNLIGHT |
1980-01-01 |
320 |
A NEW PHOTO-SENSITIVE VOLTAGE-CONTROLLED DIFFERENTIAL NEGATIVE-RESISTANCE DEVICE - THE LAMBDA-BIPOLAR PHOTO-TRANSISTOR |
1980-01-01 |
321 |
ON THE FORWARD CURRENT-VOLTAGE CHARACTERISTICS OF P+-N-N+(N+-P-P+) EPITAXIAL DIODES |
1980-01-01 |
322 |
INTEGRATED ALPHA-TYPE DIFFERENTIAL NEGATIVE-RESISTANCE MOSFET DEVICE |
1979-01-01 |
323 |
NEW INTEGRATED VOLTAGE-CONTROLLED NEGATIVE-RESISTANCE DEVICE LAMBDA MOSFET |
1979-01-01 |