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曾俊元

曾俊元 Tseng, Tseung-Yuen

電子郵件／E-mail：tseng@cc.nctu.edu.tw

服務單位／Department：電機學院 ／ 電子工程學系及電子研究所

著作期間／Publish Period：1970-01-01 - 2014-10-01

著作統計／Statistics

Article（271）
Books（7）
Others（18）
Patents（8）
Plan（53）
Proceedings Paper（49）
Thesis（164）

Article

序號
No.		 標題
Title		 著作日期
Date
1 Mechanism of High Temperature Retention Property (up to 200 degrees C) in ZrO2-Based Memory Device With Inserting a ZnO Thin Layer 2014-10-01
2 Compact Ga-Doped ZnO Nanorod Thin Film for Making High-Performance Transparent Resistive Switching Memory 2014-10-01
3 A novel strongly correlated electronic thin-film laser energy/power meter based on anisotropic Seebeck effect
 2014-09-01
4 High energy density asymmetric pseudocapacitors fabricated by graphene/carbon nanotube/MnO2 plus carbon nanotubes nanocomposites electrode
 2014-08-01
5 Resistive switching characteristics of Pt/CeOx/TiN memory device
 2014-06-01
6 On the Origin of Anomalous OffCurrent Under Hot Carrier Stress in p-Channel DDDMOS Transistors With STI Structure
 2014-06-01
7 Hydrothermal Formation of Tungsten Trioxide Nanowire Networks on Seed-Free Substrates and Their Properties in Electrochromic Device
 2014-05-01
8 Investigation of abnormal negative threshold voltage shift under positive bias stress in input/output n-channel metal-oxide-semiconductor field-effect transistors with TiN/HfO2 structure using fast I-V measurement
 2014-03-17
9 Switching mechanism of double forming process phenomenon in ZrOx/HfOy bilayer resistive switching memory structure with large endurance
 2014-02-10
10 Forming-free bipolar resistive switching in nonstoichiometric ceria films
 2014-01-27
11 Electrophoretic fabrication and pseudocapacitive properties of graphene/manganese oxide/carbon nanotube nanocomposites
 2013-12-01
12 High-k shallow traps observed by charge pumping with varying discharging times
 2013-11-07
13 A high-performance laser energy meter based on anisotropic Seebeck effect in a strongly correlated electronic thin film
 2013-11-01
14 Abnormal threshold voltage shift under hot carrier stress in Ti1-xNx/HfO2 p-channel metal-oxide-semiconductor field-effect transistors
 2013-09-28
15 Resistive switching behavior of sol-gel deposited TiO2 thin films under different heating ambience
 2013-09-01
16 Characterization of environment-dependent hysteresis in indium gallium zinc oxide thin film transistors
 2013-09-01
17 Unipolar resistive switching behavior in Pt/HfO2/TiN device with inserting ZrO2 layer and its 1 diode-1 resistor characteristics
 2013-07-15
18 Unipolar Resistive Switching in ZrO2 Thin Films
 2013-04-01
19 Investigation of extra traps measured by charge pumping technique in high voltage zone in p-channel metal-oxide-semiconductor field-effect transistors with HfO2/metal gate stacks
 2013-01-07
20 Investigation of an anomalous hump in gate current after negative-bias temperature-instability in HfO2/metal gate p-channel metal-oxide-semiconductor field-effect transistors
 2013-01-07
21 Improved Resistive Switching Characteristics by Al2O3 Layers Inclusion in HfO2-Based RRAM Devices
 2013-01-01
22 Investigation of Lateral Trap Position by Random Telegraph Signal Analysis in Moderate Inversion in n-Channel MOSFETs
 2013-01-01
23 Anomalous Gate Current Hump after Dynamic Negative Bias Stress and Negative-Bias Temperature-Instability in p-MOSFETs with HfxZr1-xO2 and HfO2/Metal Gate Stacks
 2013-01-01
24 Analysis of anomalous traps measured by charge pumping technique in HfO2/metal gate n-channel metal-oxide-semiconductor field-effect transistors
 2012-12-03
25 Electrical Properties and Reliability of ZnO-Based Nanorod Current Emitters
 2012-07-01
26 "Field Emission Properties and Reliability of ZnO Nanorod, Nanopagoda, and Nanotip Current Emitters" 2012-07-01
27 Unipolar Resistive Switching Characteristics of a ZrO2 Memory Device With Oxygen Ion Conductor Buffer Layer
 2012-06-01
28 A study on low-power, nanosecond operation and multilevel bipolar resistance switching in Ti/ZrO2/Pt nonvolatile memory with 1T1R architecture
 2012-06-01
29 ZnO nanorods grown on polymer substrates as UV photodetectors
 2012-05-01
30 Fabrication and resistive switching characteristics of high compact Ga-doped ZnO nanorod thin film devices
 2012-04-13
31 Resistive switching characteristics of nickel silicide layer embedded HfO2 film
 2012-03-12
32 Bottom Electrode Modification of ZrO2 Resistive Switching Memory Device with Au Nanodots
 2012-02-01
33 Oxygen-Adsorption-Induced Anomalous Capacitance Degradation in Amorphous Indium-Gallium-Zinc-Oxide Thin-Film-Transistors under Hot-Carrier Stress
 2012-01-01
34 Robust unipolar resistive switching of Co nano-dots embedded ZrO(2) thin film memories and their switching mechanism 2012-01-01
35 Surface states related the bias stability of amorphous In-Ga-Zn-O thin film transistors under different ambient gasses
 2011-12-30
36 Forming-free resistive switching behaviors in Cr-embedded Ga(2)O(3) thin film memories 2011-12-01
37 Nitric Acid Oxidized ZrO(2) as the Tunneling Oxide of Cobalt Silicide Nanocrystal Memory Devices 2011-09-01
38 Investigation for coexistence of dual resistive switching characteristics in DyMn(2)O(5) memory devices 2011-08-29
39 Low-Power and Highly Reliable Multilevel Operation in ZrO(2) 1T1R RRAM 2011-08-01
40 Environment-dependent thermal instability of sol-gel derived amorphous indium-gallium-zinc-oxide thin film transistors
 2011-04-11
41 High Device Yield of Resistive Switching Characteristics in Oxygen-Annealed SrZrO(3) Memory Devices 2011-04-01
42 Dopant Activation in Single-Crystalline Germanium by Low-Temperature Microwave Annealing
 2011-02-01
43 H(2)O-Assisted O(2) Adsorption in Sol-Gel Derived Amorphous Indium Gallium Zinc Oxide Thin Film Transistors 2011-01-01
44 Influence of H(2)O Dipole on Subthreshold Swing of Amorphous Indium-Gallium-Zinc-Oxide Thin Film Transistors 2011-01-01
45 Influence of Nanocrystals on Resistive Switching Characteristic in Binary Metal Oxides Memory Devices 2011-01-01
46 Electrophoretic Fabrication and Characterizations of Manganese Oxide/Carbon Nanotube Nanocomposite Pseudocapacitors
 2011-01-01
47 Controllable oxygen vacancies to enhance resistive switching performance in a ZrO(2)-based RRAM with embedded Mo layer 2010-12-10
48 Multilevel resistive switching in Ti/Cu(x)O/Pt memory devices 2010-12-01
49 Hydrogen Gas Sensors Using ZnO-SnO(2) Core-Shell Nanostructure 2010-12-01
50 Size-dependent field-emission characteristics of ZnO nanowires grown by porous anodic aluminum oxide templates assistance
 2010-10-01
51 Formation of the distributed NiSiGe nanocrystals nonvolatile memory formed by rapidly annealing in N(2) and O(2) ambient 2010-10-01
52 Effects of Vanadium Doping on Resistive Switching Characteristics and Mechanisms of SrZrO(3)-Based Memory Films 2010-08-01
53 High-speed and localized resistive switching characteristics of double-layer SrZrO(3) memory devices 2010-07-28
54 Bias-induced oxygen adsorption in zinc tin oxide thin film transistors under dynamic stress
 2010-06-28
55 Second Phase and Defect Formation in Bi(0.5)Na(0.5-x)K(x)TiO(3) Ceramics 2010-06-01
56 Correlation of Microstructures and Conductivities of Ferroelectric Ceramics Using Complex Impedance Spectroscopy
 2010-06-01
57 Charge storage characteristics of high density Mo nanocrystal embedded in silicon oxide and silicon nitride
 2010-02-24
58 Ti-Induced Recovery Phenomenon of Resistive Switching in ZrO(2) Thin Films 2010-01-01
59 High Density Ni Nanocrystals Formed by Coevaporating Ni and SiO(2) Pellets for the Nonvolatile Memory Device Application 2010-01-01
60 Nitric Acid Oxidation of Si for the Tunneling Oxide Application on CoSi(2) Nanocrystals Nonvolatile Memory 2010-01-01
61 Effects of Ti top electrode thickness on the resistive switching behaviors of rf-sputtered ZrO(2) memory films 2009-09-14
62 The structural and optical properties of ZnO nanowire arrays prepared by hydrothermal synthesis method
 2009-07-01
63 Nanotip fabrication of zinc oxide nanorods and their enhanced field emission properties
 2009-03-25
64 Cobalt nanodots formed by annealing the CoSiO layer for the application of the nonvolatile memory
 2009-03-09
65 Electrical and optical properties of ZnO:Al thin films grown by magnetron sputtering
 2009-03-01
66 NiSiGe nanocrystals for nonvolatile memory devices
 2009-02-09
67 Improved reliability of Mo nanocrystal memory with ammonia plasma treatment
 2009-02-09
68 Charge Storage Characteristics of Mo Nanocrystal Memory Influenced by Ammonia Plasma Treatment
 2009-01-01
69 Improvement of Charge-Storage Characteristics of Mo Nanocrystal Memory by Double-Layer Structure
 2009-01-01
70 Enhancement of NiSi-Based Nanocrystal Formation by Incorporating Ge Elements for Nonvolatile Memory Devices
 2009-01-01
71 Charge storage characteristics of Mo nanocrystal dependence on Mo oxide reduction
 2008-12-01
72 Improvement of resistive switching characteristics in SrZrO3 thin films with embedded Cr layer
 2008-10-01
73 Preparation and Characterizations of ZnO Nanotubes by Acidic Etching Nanowires 2008-09-01
74 Optical Properties of Ce-Doped ZnO Nanowires Directionally Grown by Hydrothermal Method 2008-09-01
75 Formation of Core/Shell-Type ZnO/CeO(2) Nanorods and CeO(2) Nanotube Arrays by Aqueous Synthesis and Wet-Etching 2008-06-01
76 Formation of cobalt-silicide nanocrystals in Ge-doped dielectric layer for the application on nonvolatile memory
 2008-04-14
77 Electrical properties and fatigue behaviors of ZrO(2) resistive switching thin films 2008-01-01
78 Formation of Mo silicide nanodot memory by rapid thermal annealing dual electron-gun evaporated Mo-Si layer 2008-01-01
79 Voltage-polarity-independent and high-speed resistive switching properties of v-doped SrZrO3 thin films
 2007-12-01
80 Modified resistive switching behavior of ZrO2 memory films based on the interface layer formed by using Ti top electrode
 2007-11-01
81 Well-aligned ternary Cd1-xZnxS nanowire Arrays and their composition-dependent field emission properties
 2007-09-13
82 SrTiO3-SiO2 oxide films for possible high-k gate dielectric applications
 2007-07-31
83 Effect of top electrode material on resistive switching properties of ZrO2 film memory devices
 2007-05-01
84 Resistance switching properties of sol-gel derived SrZrO3 based memory thin films
 2007-04-07
85 Resistive switching mechanisms of V-doped SrZrO3 memory films
 2006-09-01
86 Formation of germanium nanocrystals embedded in silicon-oxygen-nitride layer
 2006-07-31
87 Field-emission triode of low-temperature synthesized ZnO nanowires
 2006-05-01
88 Electrical properties of resistance switching V-doped SrZrO3 films on textured LaNiO3 bottom electrodes
 2006-03-21
89 Effect of phosphorus dopant on photoluminescence and field-emission characteristics of Mg0.1Zn0.9O nanowires
 2006-01-15
90 Electrical characterizations of a controllable field emission triode based on low temperature synthesized ZnO nanowires
 2006-01-14
91 Gate-controlled ZnO nanowires for field-emission device application
 2006-01-01
92 A fabrication of germanium nanocrystal embedded in silicon-oxygen-nitride layer 2006-01-01
93 High-performance hydrogenated amorphous-Si TFT for AMLCD and AMOLED applications
 2005-10-01
94 Surface chemical and leakage current density characteristics of nanocrystalline Ag-Ba0.5Sr0.5TiO3 thin films
 2005-09-01
95 Single-crystalline MgxZn1-xO (0 <= x <= 0.25) nanowires on glass substrates obtained by a hydrothermal method: growth, structure and electrical characteristics
 2005-08-01
96 Dielectric and electrical properties of SrTiO(3+/-y)-(SiO2)(x) thin films
 2005-07-21
97 ZnO nanowires hydrothermally grown on PET polymer substrates and their characteristics 2005-07-01
98 Bistable resistive switching of a sputter-deposited Cr-doped SrZrO3 memory film
 2005-06-01
99 Low temperature synthesized Sn doped indium oxide nanowires
 2005-04-01
100 Electrical degradation of N-channel poly-Si TFT under AC stress 2005-01-01
101 Characteristics and electrochemical performance of supercapacitors with manganese oxide-carbon nanotube nanocomposite electrodes
 2005-01-01
102 Effects of oxygen plasma ashing on barrier dielectric SiCN film 2005-01-01
103 Fabrication of vertical ZnO nanowires on silicon(100) with epitaxial ZnO buffer layer 2004-11-01
104 Effect of Sn dopant on the properties of ZnO nanowires
 2004-08-21
105 Dielectric characteristics of nanocrystalline Ag-Ba0.5Sr0.5TiO3 composite thin films
 2004-08-16
106 Effect of atmosphere on growth of single crystal zinc oxide nanowires
 2004-08-01
107 Memory properties of metal/ferroelectric/semiconductor and metal/ferroelectric/insulator/semiconductor structures using rf sputtered ferroelectric Sr0.8Bi2.5Ta1.2Nb0.8O9 thin films
 2004-07-01
108 Deep depletion phenomenon of SrTiO3 gate dielectric capacitor
 2004-05-15
109 Method to improve chemical-mechanical-planarization polishing rate of low-k methyl-silsesquiazane for ultralarge scale integrated interconnect application
 2004-05-01
110 Field emission and photofluorescent characteristics of zinc oxide nanowires synthesized by a metal catalyzed vapor-liquid-solid process
 2004-04-01
111 Electrical and dielectric behavior of fluorite-like Sr0.8Bi2.6Ta2O9 thin films pyrolyzed and thermally annealed at 450 degrees C
 2004-02-15
112 Preferentially oriented ferroelectric Pb(Zr0.53Ti0.47)O(3)thin films on (110)BaRuO3/Ru/SiO2/Si substrates 2004-01-01
113 Pattern profile distortion and stress evolution in nanoporous organosilicates after photoresist stripping 2004-01-01
114 CMP of low-k methylsilsesquiazane with oxygen plasma treatment for multilevel interconnect applications 2004-01-01
115 Studies on ferroelectric properties of sol-gel derived Pb(Zr0.53Ti0.47)O-3 using Ba0.5Sr0.5RuO3 as the conductive electrodes
 2004-01-01
116 Electrical and dielectric properties of low-temperature crystallized Sr0.8Bi2.6Ta2O9+x thin films on Ir/SiO2/Si substrates
 2003-12-20
117 Improvement in retention time of metal-ferroelectric-metal-insulator-semiconductor structures using MgO doped Ba0.7Sr0.3TiO3 insulator layer
 2003-08-04
118 Moisture-induced material instability of porous organosilicate glass 2003-04-01
119 Electrical and dielectric properties of (Ba0.5Sr0.5)TiO3 thin films prepared by a hydroxide-alkoxide precursor-based sol-gel method
 2003-01-02
120 Device Modeling of ferroelectric memory field-effect transistor for the application of ferroelectric random access memory
 2003-01-01
121 Copper-catalyzed ZnO nanowires on silicon (100) grown by vapor-liquid-solid process
 2003-01-01
122 Effects of nitridation of silicon and repeated spike heating on the electrical properties of SrTiO3 gate dielectrics
 2002-12-02
123 Device modeling of ferroelectric memory field-effect transistor (FeMFET)
 2002-10-01
124 An improved two-frequency method of capacitance measurement for SrTiO3 as high-k gate dielectric
 2002-09-01
125 Dependence of luminescence efficiency on dopant concentration and sintering temperature in the erbium-doped Ba0.7Sr0.3TiO3 thin films
 2002-08-15
126 Characterization of porous silicate for ultra-low k dielectric application
 2002-07-01
127 Microwave penetration depth measurement for high T-c superconductors by dielectric resonators
 2002-06-01
128 Deep electron trapping centers in Te-doped (AlxGa1-x)(0.5)In0.5P (x=0.5) layers grown by metal-organic chemical vapor deposition
 2002-06-01
129 Enhanced ferroelectric properties of Pb(Zr0.53Ti0.47)O-3 thin films on SrRuO3/Ru/SiO2/Si substrates
 2002-05-20
130 A method to characterize the dielectric and interfacial properties of metal-insulator-semiconductor structures by microwave measurement
 2002-04-15
131 Dielectric tunability of barium strontium titanate films prepared by a sol-gel method
 2002-04-03
132 Electrical and dielectric behavior of MgO doped Ba0.7Sr0.3TiO3 thin films on Al2O3 substrate
 2002-03-11
133 Generalized interconnect delay time and crosstalk models: I. Applications of interconnect optimization design
 2001-12-01
134 Generalized interconnect delay time and crosstalk models: II. Crosstalk-induced delay time deterioration and worst crosstalk models
 2001-12-01
135 The effects of low-pressure rapid thermal post-annealing on the properties of (Ba,Sr)TiO3 thin films deposited by liquid source misted chemical deposition
 2001-12-01
136 Deep hole traps created by gamma-ray irradiation of GaInP
 2001-12-01
137 Application of on-wafer TRL calibration on the measurement of microwave properties of Ba0.5Sr0.5TiO3 thin films
 2001-11-01
138 Gamma-ray induced deep electron traps in GaInP
 2001-09-01
139 Thermal-treatment induced deep electron traps in AlInP
 2001-08-01
140 Elimination of dielectric degradation for chemical-mechanical planarization of low-k hydrogen silisesquioxane
 2001-05-01
141 Effects of ceramic processing parameters on the microstructure and dielectric properties of (Ba1-xCax)(Ti0.99-y, ZryMn0.01)O-3 sintered in a reducing atmosphere
 2001-02-01
142 The effect of oxygen-to-argon ratio on the electrical and reliability characteristics of sputtered Sr0.8Bi2.5Ta1.2Nb0.9O9+x thin films
 2000-08-22
143 Sintering BaTi4O9/Ba2Ti9O20-based ceramics by glass addition
 2000-07-01
144 Effects of calcination temperature and A/B ratio on the dielectric properties of (Ba,Ca)(Ti,Zr,Mn)O-3 for multilayer ceramic capacitors with nickel electrodes
 2000-06-01
145 Study of linear and nonlinear optical properties of distorted Ti-O-6 perovskite structure in BaxSr1-xTiO3
 2000-06-01
146 Surface modification of Dy2O3-Nb2O5 dope mix for dielectric materials in aqueous dispersion
 2000-06-01
147 Dielectric relaxation and defect analysis of Ta2O5 thin films
 2000-05-21
148 Effect of bottom electrodes on resistance degradation and breakdown of (Ba, Sr)TiO3 thin films
 2000-03-01
149 Effects of A/B cation ratio on the microstructure and lifetime of (Ba1-xCax)(z)(Ti0.99-y ZryMn0.01)O-3 (BCTZM) sintered in reducing atmosphere
 2000-03-01
150 Electrical properties of Ta2O5 thin films deposited on Cu
 2000-02-01
151 Structure-related optical properties of rapid thermally annealed Ba0.7Sr0.3TiO3 thin films
 1999-11-01
152 Preparation of aluminum film on phosphor screen for field emission display
 1999-10-15
153 Effect of oxygen to argon ratio on defects and electrical conductivities in Ba0.47Sr0.53TiO3 thin-film capacitors
 1999-09-07
154 Effect of bottom electrode materials on the electrical and reliability characteristics of (Ba, Sr)TiO3 capacitors
 1999-09-01
155 Mixing macro and micro flowtime estimation model: wafer fab example
 1999-07-20
156 Analysis of AC electrical response for radio-frequency sputtered (Ba0.5Sr0.5)TiO3 thin film
 1999-06-01
157 Promotion of phase transformation and single-phase formation in silver-doped Tl-Ba-Ca-Cu-O superconducting thin films
 1999-05-01
158 Ba(Ti0.8Sn0.2)O-3 thin films prepared by radio-frequency magnetron sputtering for dynamic random access memory applications 1999-05-01
159 Electrical properties of Ta2O5 thin films deposited on Ta
 1999-04-26
160 Short-duration rapid-thermal-annealing processing of tantalum oxide thin films
 1999-03-01
161 Electron paramagnetic resonance and luminescence study of sol-gel derived YAG : Cr powder
 1999-03-01
162 Electrical properties of rapid thermal-enhanced low pressure chemical vapor deposited Ta2O5 thin films 1999-03-01
163 Involvement of scattered UV light in the generation of photoluminescence in powdered phosphor screens
 1999-02-21
164 Effect of bottom electrode materials and annealing treatments on the electrical characteristics of Ba0.47Sr0.53TiO3 film capacitors
 1999-02-01
165 Formation behavior of high-T-c Tl-based superconductors
 1999-02-01
166 Effect of bismuth content on the properties of Sr0.8BixTa1.2 Nb0.9O9+y ferroelectric thin films
 1999-01-15
167 Optical and structural properties of (Ba, Sr)TiO3 thin films grown by radio-frequency magnetron sputtering
 1999-01-01
168 Effect of bottom electrodes on dielectric relaxation and defect analysis of (Ba0.47Sr0.53)TiO3 thin film capacitors
 1998-11-01
169 Effect of LiCl on the crystallization behavior and luminescence of Y3Al5O12 : Tb
 1998-11-01
170 Preparation and characteristics of Bi-Pb-Sr-Ca-Cu-O superconducting films by spray pyrolysis and post-annealing
 1998-10-15
171 Phase development and activation energy of the Y2O3-Al2O3 system by a modified sol-gel process
 1998-09-30
172 Preparation and electronic properties of YBa2Cu3Ox films with controlled oxygen stoichiometries
 1998-08-01
173 Conduction mechanism and temperature-dependent current-voltage in (Ba, Sr)TiO3 thin films
 1998-08-01
174 Conduction mechanisms in amorphous and crystalline Ta2O5 thin films 1998-05-01
175 Electrical characteristics of (Pb,Sr)TiO3 positive temperature coefficient ceramics
 1998-05-01
176 Sr0.8Bi2.5Ta1.2Nb0.9O9+x ferroelectric thin films prepared by two-target off-axis radio frequency magnetron sputtering 1998-04-06
177 Correlation of grain boundary characteristics with electrical properties in ZnO-glass varistors 1998-02-01
178 Highly oriented (Zr0.7Sn0.3)TiO4 thin films grown by rf magnetron sputtering
 1998-02-01
179 Electrical properties of O-2 and N-2 annealed (Ba,Sr)TiO3 thin films
 1998-01-01
180 Effect of oxygen to argon ratio on properties of (Ba,Sr)TiO3 thin films prepared by radio-frequency magnetron sputtering 1997-10-01
181 Structural and electrical properties of cerium dioxide films grown by RF magnetron sputtering
 1997-10-01
182 Characterization of yttria-stabilized zirconia thin films grown by planar magnetron sputtering
 1997-08-28
183 Off-axis unbalanced magnetron sputtering of YBa2Cu3O7 thin films
 1997-07-01
184 Electronic defect and trap-related current of (Ba0.4Sr0.6)TiO3 thin films 1997-05-15
185 Influence of crystal structure on the fatigue properties of Pb1-xLax(Zr-y,Ti-z)O-3 thin films prepared by pulsed-laser deposition technique
 1997-05-01
186 Effective microwave surface impedance of superconducting films in the mixed state
 1997-05-01
187 Effects of spinel phase formation in the calcination process on the characteristics of ZnO-glass varistors
 1997-04-01
188 Resistive response to a microwave field in high temperature superconducting crystals
 1997-03-15
189 A-axis YBCO thin films deposited by DC magnetron sputtering
 1997-01-01
190 Growth and fatigue properties of pulsed laser deposited Pb1-xLax(ZryTiz)O-3 thin films with [001] preferred orientation 1996-12-01
191 Preparation and characterization of PLZT thin films by sol-gel processing 1996-12-01
192 The interaction between a single vortex and a columnar defect in the superconducting multilayers
 1996-10-01
193 Degradation phenomena of multilayer ZnO-glass varistors studied by deep level transient spectroscopy 1996-09-16
194 Microstructure and crystal phases of praseodymium oxides in zinc oxide varistor ceramics 1996-09-01
195 Grain-boundary surface states of (Ba, Pb)TiO3 positive temperature coefficient ceramics doped with different additives and its influence on electrical properties
 1996-09-01
196 AC permeability of the flux-line liquid in the anisotropic high-T-c superconducting crystals
 1996-09-01
197 Interaction between a two-dimensional pancake vortex and a circular nonsuperconducting defect 1996-07-01
198 Microwave response of superconducting platelet crystals 1996-07-01
199 High-frequency vortex response of anisotropic type-II superconductors 1996-07-01
200 Microwave surface impedances of BCS superconducting thin films
 1996-06-01
201 Interdiffusion of multilayer ferroelectric thin films using YBa2Cu3O7-x as an intermediate layer 1996-05-15
202 Fabrication and microstructure of the dc-magnetron-sputtered YBa2Cu3O7-x superconducting thin films 1996-04-01
203 AC response of the vortex liquid in the high-T-c superconducting cylinder
 1996-04-01
204 On the off stoichiometry of cerium oxide thin films deposited by RF sputtering
 1996-04-01
205 Vortex response to the ac field in anisotropic high-T-c superconductors
 1996-03-01
206 Effects of oxygen-argon mixing on the electrical and physical properties of ZrTiO4 films sputtered on silicon at low temperature 1995-12-15
207 Modification on the surface of superconducting YBa2Cu3O7-x films by microwave plasma-enhanced pulsed laser deposition 1995-12-15
208 DEGRADATION PHENOMENA DUE TO IMPULSE-CURRENT IN ZINC-OXIDE VARISTORS 1995-10-01
209 PRESSURE EFFECT ON YBA2CU3O7 THIN-FILM GROWTH IN OFF-AXIS RADIO-FREQUENCY MAGNETRON SPUTTERING
 1995-09-01
210 EFFECTS OF SUBSTRATE-TEMPERATURE AND OXYGEN PARTIAL-PRESSURE ON THE PROPERTIES OF SPUTTERED ZIRCONIUM TITANATE THIN-FILMS
 1995-09-01
211 CHARACTERISTIC ANALYSIS OF ZNO VARISTORS MADE WITH SPHERICAL PRECIPITATION POWDERS
 1995-07-01
212 GROWTH AND FERROELECTRICITY OF EPITAXIAL-LIKE BATIO3 FILMS ON SINGLE-CRYSTAL MGO, SRTIO3, AND SILICON SUBSTRATES SYNTHESIZED BY PULSED-LASER DEPOSITION 1995-06-15
213 GROWTH OF EPITAXIAL-LIKE (SR0.5BA0.5)NB2O6 FERROELECTRIC-FILMS
 1995-05-15
214 OPTICAL-PROPERTIES OF ZRTIO4 FILMS GROWN BY RADIOFREQUENCY MAGNETRON SPUTTERING 1995-05-01
215 INFLUENCE OF PROCESSING PARAMETERS ON THE MICROSTRUCTURE AND ELECTRICAL-PROPERTIES OF MULTILAYER-CHIP ZNO VARISTORS 1995-04-01
216 THE EFFECTS OF ND2O3 ADDITIVES AND AL2O3-SIO2-TIO2 SINTERING AIDS ON THE ELECTRICAL-RESISTIVITY OF (BA,SR)TIO3 PTCR CERAMICS
 1995-04-01
217 PARAMAGNETIC MEISSNER EFFECT OF HIGH-TEMPERATURE GRANULAR SUPERCONDUCTORS - INTERPRETATION BY ANISOTROPIC AND ISOTROPIC MODELS 1995-02-01
218 DOUBLE RESONANT BEHAVIOR OF MICROSTRIP RING-RESONATOR IN TL-BASED HIGH T-C SUPERCONDUCTING FILMS 1994-12-19
219 ELECTRICAL-PROPERTIES OF MULTILAYER-CHIP ZNO VARISTORS IN A MOIST-AIR ENVIRONMENT 1994-11-01
220 GROWTH PARAMETER EFFECT IN SUPERCONDUCTING YBA2CU4O8 THIN-FILMS BY DC MAGNETRON SPUTTERING 1994-11-01
221 INVESTIGATION OF RESISTIVITY AND PERMITTIVITY FOR (BA,PB)TIO3 PTCR CERAMICS 1994-09-01
222 GROWTH-BEHAVIOR OF Y1BA2CU3O7-X SUPERCONDUCTING THIN-FILMS USING LASER-ABLATION TECHNIQUE
 1994-07-01
223 GROWTH OF HIGHLY ORIENTED ZRTIO(4) THIN-FILMS BY RADIOFREQUENCY MAGNETRON SPUTTERING
 1994-06-13
224 ANALYSIS OF THE AC ELECTRICAL RESPONSE FOR (BA,PB)TIO3 POSITIVE TEMPERATURE-COEFFICIENT CERAMICS
 1994-06-01
225 PREPARATION AND CHARACTERIZATION OF TL-BA-CA-CU-O SUPERCONDUCTING FILMS BY SPRAY-PYROLYSIS AND TL-DIFFUSION TECHNIQUE 1994-01-01
226 THE ROLE OF DRYING-CONTROL CHEMICAL ADDITIVES ON THE PREPARATION OF SOL-GEL DERIVED PLZT THIN-FILMS 1993-12-15
227 CALCULATIONS AND MODELING OF GRAIN-BOUNDARY ACCEPTOR STATES FOR (BA,PB)TIO3 POSITIVE TEMPERATURE-COEFFICIENT CERAMICS 1993-09-01
228 INFLUENCE OF SINTERING PROFILE ON THE RESISTIVITY OF LOW-CURIE-POINT PTCR CERAMICS 1993-08-01
229 INFLUENCE OF SINTERING TEMPERATURE ON ELECTRICAL-PROPERTIES OF ZNO VARISTORS 1993-07-01
230 INTERPRETATION OF THE ANOMALOUS FIELD-COOLED-MAGNETIZATION BEHAVIOR OF HIGH-TEMPERATURE GRANULAR SUPERCONDUCTORS AT LOW MAGNETIC-FIELD 1993-07-01
231 EFFECT OF AG2O ADDITIVE ON MICROSTRUCTURE AND SUPERCONDUCTIVITY OF THE TL2BA2CA2CU3OY COMPOUND 1993-06-21
232 SUPERCONDUCTING PROPERTIES OF ORIENTED YBA2CU3O7-X FILMS ON MGO AND SRTIO3 SUBSTRATES 1993-05-01
233 BOLOMETRIC RESPONSE OF SUPERCONDUCTING YBA2CU3O7-X MICROBRIDGES 1992-12-15
234 THE EFFECT OF GRAIN-BOUNDARIES ON THE ELECTRICAL-PROPERTIES OF ZINC OXIDE-BASED VARISTOR 1992-11-01
235 FLUX MOTION DEPENDENCE OF RESISTIVE PROPERTIES IN SUPERCONDUCTING YBA2CU3O7-X THIN-FILMS 1992-08-01
236 COPPER VALENCY OF SUPERCONDUCTING PHASES IN THE PB-DOPED BI-SR-CA-CU-O SYSTEM 1992-07-01
237 PHASE IDENTIFICATION AND ELECTRICAL-PROPERTIES IN ZNO-GLASS VARISTORS 1992-06-01
238 CHARACTERISTICS OF THE HIGH-TC SUPERCONDUCTING BI-PB-SR-CA-CU OXIDES DERIVED FROM AN ETHYLENEDIAMINETETRAACETIC ACID PRECURSOR 1992-01-01
239 INFLUENCE OF COOLING RATE ON ELECTRICAL-PROPERTIES OF ZINC OXIDE-BASED VARISTORS
 1992-01-01
240 BOLOMETRIC YBA2CU3O7-X INFRARED DETECTOR
 1991-09-12
241 PREPARATION OF FINE-GRAINED BATIO3 1991-06-01
242 EFFECT OF INORGANIC ELECTROLYTES ON THE RHEOLOGICAL PROPERTIES OF THE AQUEOUS YTTRIUM-OXIDE COLLOIDAL ZIRCONIA BINDER SOLS SYSTEM 1991-04-01
243 EFFECT OF CA2PBO4 ADDITIONS ON THE FORMATION OF THE 110-K PHASE IN BI-PB-SR-CA-CU-O SUPERCONDUCTING CERAMICS 1991-02-11
244 FABRICATION OF HIGH-CURIE-POINT BARIUM-LEAD TITANATE PTCR CERAMICS 1990-09-01
245 HUMIDITY-SENSITIVITY CHARACTERISTICS OF CATIO3 POROUS CERAMICS 1990-08-01
246 PREPARATION AND PROPERTIES OF GEL-DERIVED HIGH-TC YBA2CU3O7-X SUPERCONDUCTOR 1990-07-01
247 ELECTRICAL-PROPERTIES OF TIO2-K2TI6O13 POROUS CERAMIC HUMIDITY SENSOR 1990-07-01
248 SYNTHESIS OF HIGH-TC SUPERCONDUCTING BI-PBSR-CA-CU-O CERAMICS PREPARED BY AN ULTRASTRUCTURE PROCESSING VIA THE OXALATE ROUTE 1990-07-01
249 FORMATION OF HIGH-TC SUPERCONDUCTING BI-PB-SR-CA-CU OXIDE-FILMS BY SPRAY PYROLYSIS OF AN OXALATE SUSPENSION 1990-04-01
250 PREPARATION OF BI0.7PB0.3SR1.0CA1.0CU1.8OY HIGH-TC SUPERCONDUCTOR BY THE CITRATE METHOD
 1990-04-01
251 AC ELECTRICAL-PROPERTIES OF HIGH-CURIE-POINT BARIUM LEAD TITANATE PTCR CERAMICS 1990-02-01
252 THE EFFECT OF COOLING RATE ON THE POSITIVE TEMPERATURE COEFFICIENT RESISTIVITY CHARACTERISTICS OF LANTHANUM-DOPED BA0.8SR0.2TIO3 CERAMICS 1989-12-01
253 ENHANCED DENSIFICATION OF PURE ALUMINA WITH ALUMINA SOL MIXING 1989-11-01
254 ZERO RESISTANCE AT 125-K IN BI(PB)-SR-CA-CU-O SUPERCONDUCTOR 1989-11-01
255 MICROSTRUCTURE AND PROPERTIES OF NI-ZN FERRITES SINTERED FROM SLIP CAST COLLOIDALLY PRECIPITATED PARTICLES
 1989-11-01
256 RHEOLOGICAL PROPERTIES OF THE AQUEOUS ZIRCONIA COLLOIDAL ZIRCONIA BINDER SOL SYSTEM 1989-08-01
257 ANALYSIS OF THE DC AND AC PROPERTIES OF K2O-DOPED POROUS BA0.5SR0.5TIO3 CERAMIC HUMIDITY SENSOR 1989-08-01
258 PREPARATION OF HOMOGENEOUSLY GRAINED MN-ZN FERRITES 1989-07-01
259 PREPARATION OF HIGH-TC SUPERCONDUCTING OXIDE IN THE BI-SR-CA-CU-O SYSTEM BY OXALATE GEL PROCESSING 1989-07-01
260 ELECTRICAL-PROPERTIES OF K2O-DOPED BA0.5SR0.5TIO3 CERAMIC HUMIDITY SENSOR
 1989-06-01
261 PREPARATION OF FINE-GRAINED NI-ZN FERRITES 1989-03-01
262 SYNTHESIS OF HIGH-TC YBA2CU3O7-X SUPERCONDUCTORS AT A LOW ANNEALING TEMPERATURE FROM A GLASS PRECURSOR
 1989-01-01
263 HUMIDITY-SENSITIVE ELECTRICAL-PROPERTIES OF BA0.5SR0.5TIO3 POROUS CERAMICS 1988-07-01
264 THERMODYNAMIC PROPERTIES OF IRON DOPED BETA''-ALUMINA BY EMF-MEASUREMENTS WITH BETA-ALUMINA ELECTROLYTES 1988-07-01
265 THE POSITIVE TEMPERATURE-COEFFICIENT OF RESISTIVITY OF LANTHANUM-DOPED BA0.8SR0.2TIO3 CERAMICS AS A FUNCTION OF BARIUM EXCESS
 1988-02-01
266 IRON-DOPED BETA''-ALUMINA COULOMETER 1988-01-01
267 IMPROVING THE MICROSTRUCTURE OF ISOTROPIC BARIUM FERRITE OBTAINED VIA THE COLLOIDAL FILTRATION ROUTE 1987-03-01
268 PHASE-TRANSFORMATIONS OF GEL-DERIVED MAGNESIA PARTIALLY-STABILIZED ZIRCONIAS 1987-03-01
269 VARIOUS ATMOSPHERE EFFECTS ON SINTERING OF COMPACTS OF SIO2 MICROSPHERES 1986-10-01
270 SINTERABILITY OF IRON-DOPED BETA''-ALUMINA POWDERS OBTAINED BY GEL-DERIVED AND SOLUTION-DRYING PROCESSES 1986-04-01
271 Analysis of an anomalous hump in gate current after dynamic negative bias stress in HfxZr1-xO2/metal gate p-channel metal-oxide-semiconductor field-effect transistors
 1970-01-01

Books

序號
No.		 標題
Title		 著作日期
Date
1 Nonvolatile memory : materials, devices and applications 2012
2 Nonvolatile memory : materials, devices and applications 2012
3 Handbook of nanoceramics and their based nanodevices. synthesis and processing 2009
4 Handbook of nanoceramics and their based nanodevices. Nanocomposites 2009
5 Handbook of nanoceramics and their based nanodevices. Characterization and properties 2009
6 Handbook of nanoceramics and their based nanodevices. Electronic applications 2009
7 Handbook of nanoceramics and their based nanodevices. Sensors, fuel cells, and biomedical applicatio 2009

Others

序號
No.		 標題
Title		 著作日期
Date
1 Overview of emerging nonvolatile memory technologies 2014-09-25
2 Low-Temperature Microwave Annealing Processes for Future IC Fabrication-A Review
 2014-03-01
3 One-dimensional ZnO nanostructures: fabrication, optoelectronic properties, and device applications
 2013-10-01
4 Growth, dielectric properties, and memory device applications of ZrO2 thin films
 2013-03-15
5 USING DECISION ANALYSIS METHOD TO EVALUATE THE EFFECTIVENESS OF SIMILAR FUNCTION MEDICAL MATERIALS IN HOSPITAL 2012-11-01
6 USING DECISION ANALYSIS METHOD TO EVALUATE THE EFFECTIVENESS OF SIMILAR FUNCTION MEDICAL MATERIALS IN HOSPITAL 2012-11-01
7 One-Dimensional ZnO Nanostructures 2012-06-01
8 One-dimensional semiconductor nanostructures as absorber layers in solar cells 2005-11-01
9 Direct Patterning of low-k hydrogen silsesquioxane using X-ray exposure technology (vol 6, pg G69, 2003)
 2003-07-01
10 Progress in the developments of (Ba,Sr)TiO3 (BST) thin films for Gigabit era DRAMs
 2000-08-15
11 Preparation and properties of tantalum pentoxide (Ta2O5) thin films for ultra large scale integrated circuits (ULSIs) application - A review
 1999-03-01
12 GROWTH OF CEO2 FILMS ON SAPPHIRE AND MGO BY RF MAGNETRON SPUTTERING 1995-07-01
13 EFFECT OF SOAKING TIME ON THE TEMPERATURE-COEFFICIENT OF RESISTIVITY OF SEMICONDUCTING BARIUM-TITANATE PTCR CERAMICS 1994-09-01
14 PREPARATION AND AC ELECTRICAL RESPONSE ANALYSIS FOR (BA,PB)TIO3 PTCR CERAMICS 1993-03-01
15 INSITU GROWTH OF SUPERCONDUCTING YBA2CU3O7-X THIN-FILMS 1991-09-01
16 ELECTRICAL-PROPERTIES OF POROUS TITANIA CERAMIC HUMIDITY SENSORS 1989-08-01
17 PROCESSING AND APPLICATIONS OF LANTHANUM-DOPED BA0.8SR0.2TIO3 PTCR CERAMICS 1988-01-01
18 EFFECT OF MILLING ON THE CAST MICROSTRUCTURE AND SINTERING BEHAVIOR OF MGO PARTIALLY-STABILIZED ZRO2 1987-05-01

Patents

序號
No.		 標題
Title		 著作日期
Date
1 電阻式隨存記憶體之製作方法
 2011-07-16
2 Gate controlled field emission triode and process for fabricating the same
 2009-08-13
3 閘極控制場發射三極元件及該元件之製作方法
 2009-03-21
4 閘極控制場發射三極元件及該元件之製作方法
 2008-01-01
5 Gate controlled field emission triode and process for fabricating the same
 2007-12-13
6 一種鈣鈦礦薄膜電容結構及其製造方法
 2004-11-01
7 一種鈣鈦礦薄膜電容結構及其製造方法 2004-06-01
8 一種鐵電層電極結構及製造方法
 2004-05-01

Plan

序號
No.		 標題
Title		 著作日期
Date
1 微電子工程學門研究發展及推動規劃小組計畫 2014
2 錳氧化物奈米複合材料與新穎三維碳奈米結構修飾電極製備及其應用於可撓式非對稱型超高電容器系統之研究 2014
3 新穎透明電阻式記憶體元件於高密度與低功率消耗的非揮發性記憶體應用 2014
4 前瞻高能量超高電容器整合製程及其應用平台開發( I ) 2014
5 高效能軟性之全固態薄膜型電致變色元件系統開發 (I) 2013
6 錳氧化物奈米複合材料與新穎三維碳奈米結構修飾電極製備及其應用於可撓式非對稱型超高電容器系統之研究 2013
7 微電子工程學門研究發展及推動規劃小組計畫 2013
8 新穎透明電阻式記憶體元件於高密度與低功率消耗的非揮發性記憶體應用 2013
9 奈米碳管陣列與錳氧化物奈米複合物超高電容器的製作與特性 2012
10 大面積高效能之薄膜型全固態電致色變元件系統開發 (II) 2012
11 非揮發性氧化鋯電阻式記憶元件於結構、特性與製程整合之相依性 2012
12 微電子工程學門研究發展及推動規劃小組計畫 2012
13 非揮發性氧化鋯電阻式記憶元件於結構、特性與製程整合之相依性 2011
14 奈米碳管陣列與錳氧化物奈米複合物超高電容器的製作與特性 2011
15 大面積高效能之薄膜型全固態電致色變元件系統開發(I) 2011
16 奈米碳管陣列與錳氧化物奈米複合物超高電容器的製作與特性 2010
17 非揮發性氧化鋯電阻式記憶元件於結構、特性與製程整合之相依性 2010
18 低成本高性能高可靠度先進氧化鋅奈米線場發射元件之研究
 2010
19 低成本高性能高可靠度先進氧化鋅奈米線場發射元件之研究
 2009
20 新世代電阻式非揮發性記憶元件之製作與特性研究 2009
21 新世代電阻式非揮發性記憶元件之製作與特性研究 2008
22 Investigations on Advanced ZnO Nanowires-Based Field Emission Devices with Low Cost, High Performance and High Reliability 2008
23 新世代電阻式非揮發性記憶元件之製作與特性研究 2007
24 高介電常數鈦酸鍶基閘極氧化物及元件的製作、結構與特性研究(III) 2006
25 一維與二維的氧化鋅奈米材料之製作、結構與特性研究(III) 2006
26 高介電常數鈦酸鍶基閘極氧化物及元件的製作、結構與特性研究(II)
 2005
27 奈米複合電磁波吸波材之研製
 2005
28 一維與二維的氧化鋅奈米材料之製作、結構與特性研究(II) 2005
29 一維與二維的氧化鋅奈米材料之製作、結構與特性研究(I)
 2004
30 高介電常數鈦酸鍶基閘極氧化物及元件的製作、結構與特性研究(I)
 2004
31 金屬膜表面特性對電極材料附著力的影響研究
 2004
32 金屬膜表面特性對電極材料附著力的影響研究(II) 2003
33 正型氧化鋅奈米棒和薄膜/積層膜的製備和它們性質的探討
 2003
34 新世代鐵電非揮發性記憶元件(III)
 2003
35 金屬膜表面特性對電極材料附著力的影響研究
 2002
36 12吋矽晶圓半導體CVD製程設備及BST介電薄膜成長研究---子計畫III:利用CVD法成長BST薄膜與特性分析(III) 2002
37 新世代鐵電非揮發性記憶元件(II)
 2002
38 新世代鐵電非揮發性記憶元件(I) 2001
39 12吋矽晶圓半導體CVD製程設備及BST介電薄膜成長研究---子計畫Ⅲ：利用CVD法成長BST薄膜與特性分析(II) 2001
40 12吋矽晶圓半導體CVD製程設備及BST介電薄膜成長研究---子計畫IV：利用CVD法成長BST薄膜與特性分析(I)
 2000
41 SBT鐵電薄膜製備與特性的分析(IV)
 2000
42 SBT鐵電薄膜製備與特性的分析(III) 2000
43 12吋矽晶圓半導體CVD製程設備及BST介電薄膜成長研究---子計畫三：利用CVD法成長BST薄膜與特性分析(II) 2000
44 8吋晶圓半導體LPCVD製程設備之研發---子計劃IV：利用LPCVD法成長Ta/sub 2/O/sub 5/薄膜與特性分析(III) 1999
45 SBT鐵電薄膜製備與特性的分析(II) 1999
46 薄膜超導元件的研製與特性探討-----子計畫II：高溫超導陶瓷薄膜在電子元件的物理與技術(III) 1997
47 8吋矽晶圓半導體LPCVD製程設備之研發---子計畫四：利用LPCVD法成長Ta/sub 2/O/sub 5/薄膜與特性分析(I) 1997
48 積層式氧化鋅變阻器衰化現象之研究 1996
49 薄膜超導元件的研制與特性探討---子計畫三：高溫超導陶瓷薄膜在電子元件的物理與技術(II) 1996
50 氧化鋅基積層式變阻器之製備與電性 1995
51 薄膜超導元件的研製與特性探討---子計畫二：高溫超導陶瓷薄膜在電子元件的物理與技術 1995
52 高溫超普反射式相位移器 1994
53 高溫超導陶瓷薄膜在電子元件的物理與技術 1994

Proceedings Paper

序號
No.		 標題
Title		 著作日期
Date
1 Electrochromic Properties of Tunsgten Trioxide Nanostructures 2013-01-01
2 ZnO Nanostructures for Sensor Applications 2012-01-01
3 Investigation of Random Telegraph Signal with PD SOI MOSFETs
 2012-01-01
4 Improved resistive switching properties of Ti/ZrO(2)/Pt memory devices for RRAM application 2011-07-01
5 Microstructures and electrical properties of lead-based PBZNZT and lead-free BNKT piezoelectric ceramics using microwave sintering
 2011-05-01
6 Effect of Top Electrode Material on Resistive Switching Characteristics in MnO2 Nonvolatile Memory Devices
 2011-01-01
7 Effects of Post-Deposition Annealing Atmosphere and Duration on Sol-Gel Derived Amorphous Indium-Zinc-Oxide Thin Film Transistors
 2011-01-01
8 The Impact of Active Layer Pre-Treatment on Bias Stress Stability of Sol-gel Derived Amorphous Indium-Gallium-Zinc-Oxide Thin Film Transistor
 2011-01-01
9 Highly Stable SrZrO3 Bipolar Resistive Switching Memory by Ti Modulation Layer
 2010-01-01
10 Nonpolar Bistable Resistive Switching Behaviors of Bismuth Titanate Oxide Thin Film
 2009-01-01
11 Characteristics of SrTiO(3) Insulated Layer in SBT Ferroelectric Thin Films 2009-01-01
12 Reproducible resistive switching behavior in sputtered CeO(2) polycrystalline films 2008-12-25
13 Effect of thermal treatment on resistive switching characteristics in Pt/Ti/Al(2)O(3)/Pt devices 2008-12-25
14 Current status of resistive nonvolatile memories
 2008-12-01
15 Resistive switching properties of sol-gel derived Mo-doped SrZrO3 thin films
 2007-12-15
16 Structural and optical properties of Al-doped ZnO nanowires synthesized by hydrothermal method
 2007-12-03
17 Stable resistive switching behaviors of sputter deposited V-doped SrZrO3 thin films
 2007-12-03
18 Memory effect of RF sputtered ZrO2 thin films
 2007-12-03
19 Resistive switching properties of SrZrO(3)-based memory films
 2007-04-01
20 Preparation and properties of perovskite thin films for resistive nonvolatile memory applications
 2007-01-01
21 Study on degradation of crystallized laterally grown poly-Si TFT under Dynamic Stress 2007-01-01
22 Effect of alumina doping on structural, electrical, and optical properties of sputtered ZnO thin films
 2006-11-25
23 Memory effect of sol-gel derived V-doped SrZrO3 thin films
 2006-01-03
24 Study on etching profile of nanoporous silica
 2004-12-22
25 Study on the effect of electron beam curing on low-K porous organosilicate glass (OSG) material
 2004-12-22
26 Cu-penetration induced breakdown mechanism for a-SiCN
 2004-12-22
27 Investigation of the electrical properties and reliability of amorphous SiCN
 2004-01-30
28 Correlation between deep depletion and current-voltage saturation of SrTiO3 gate dielectric capacitor
 2004-01-01
29 Electrical properties of sputter deposited SrTiO3 gate dielectrics
 2004-01-01
30 Variation of electrical properties of Sro(0.8)Bi(2+x)Ta(2)O(9+delta) ferroelectric thin films with bismuth content 2003-01-01
31 Electrical properties of metal-ferroelectric-insulator-semiconductor using sol-gel derived SrBi2Ta2O9 film and ultra-thin Si3N4 buffer layer
 2002-12-02
32 The novel pattern method of low-k hybrid-organic-siloxane-polymer film using X-ray exposure
 2002-12-02
33 A model of non-homogeneous damped electromagnetic wave and heat equation in ferrite materials
 2002-02-01
34 A novel method to characterize the dielectric and interfacial properties of Ba0.5Sr0.5TiO3 (BST)/Si by microwave measurement 2002-01-01
35 Sol-gel derived (Ba0.5Sr0.5)TiO3 thin films and their electrical and dielectric properties
 2001-01-01
36 Properties and reliability of Ta2O5 thin films deposited on Ta 1999-01-01
37 (Ba,Sr)TiO3 thin films: Preparation, properties and reliability 1999-01-01
38 Microwave properties of YBa2Cu3O7-x deposited on MgO substrates
 1997-08-01
39 Resonant rutherford backscattering studies of cerium oxide thin films deposited by RF sputtering
 1997-06-01
40 The effect of grain boundary impedance on the power loss of Mn-Zn ferrites over 1 MHz 1997-03-01
41 Effects of oxygen content on the penetration depth of pulsed laser deposited YBCO thin films 1996-04-01
42 Effects of oxygen content on the penetration depth in YBCO thin films 1996-01-01
43 Luminescent properties of sol-gel prepared Y3Al5O12:Tb thin films 1996-01-01
44 THE INVESTIGATION OF ER-DOPED GLASSES BY 2-STEP HYDROLYSIS WITH N,N-DIMETHYL FORMAMIDE
 1994-01-01
45 BOLOMETRIC RESPONSE OF SUPERCONDUCTING YBA2CU3O7-X MICROBRIDGES 1993-12-01
46 BOLOMETRIC RESPONSE OF HIGH-TEMPERATURE SUPERCONDUCTING THIN-FILMS 1993-12-01
47 STUDY OF LOSS MECHANISMS OF MN-ZN FERRITES IN THE FREQUENCY FROM 1 MHZ TO 10 MHZ
 1993-11-01
48 TRANSITION PHENOMENA OF YBA2CU3O7-X THIN-FILMS ON MGO AND SRTIO3 SUBSTRATES 1991-12-01
49 ANISOTROPIC AC-SUSCEPTIBILITY RESPONSE OF A MELT-TEXTURED YBCO SUPERCONDUCTOR 1991-12-01

Thesis

序號
No.		 標題
Title		 著作日期
Date
1 高可靠度特性的過渡金屬氧化物電阻式記憶體製作與特性研究 2014
2 氧化鋯電阻式記憶體之單極性電阻切換特性研究及其應用 2013
3 非揮發性氧化鋯電阻式記憶體於鎢電極之結構與特性研究 2013
4 奈米碳基/錳氧化物複合電極材料於超高電容器之應用研究 2013
5 先進High-k/Metal Gate之金氧半場效電晶體 電性分析與可靠度研究 2013
6 石墨烯/氧化鎢奈米複合型材料 於電致變色元件之應用研究 2013
7 氧化鋯電阻式記憶體搭配氧化鎢之雙極性與自我限流特性研究 2013
8 具交叉結構二氧化鉿電阻式記憶體之可靠度與非線性特性研究 2013
9 奈米碳管/鈷氧化物複合電極材料於超高電容器之應用研究 2013
10 45度線性極化高增益毫米波微帶天線陣列 2012
11 控制氧空缺或氧離子分佈於過渡金屬氧化物薄膜之電阻式記憶體元件的影響 2012
12 利用後續沉積退火處理來提升雙層氧化物結構之電阻式記憶體轉態特性 2012
13 水熱法合成氧化鎢奈米束狀結構應用於可撓式基板之電致變色元件研究 2012
14 高緻密鎵摻雜氧化鋅奈米柱薄膜應用於全透明高效能電阻式非揮發性記憶體特性 2012
15 鋯酸鍶基電阻式記憶元件特性與機制之研究 2011
16 前瞻電阻式轉態記憶體元件之製作與特性研究 2011
17 氧化鋯電阻式記憶元件搭配場效電晶體之特性研究 2011
18 非晶態金屬氧化物薄膜電晶體之環境敏感性與可靠度 2011
19 二元金屬氧化物電阻式記憶元件之界面效應研究 2011
20 一維氧化鋅奈米結構之製備及其應用 2011
21 以水熱法製備氧化鎢奈米線網狀結構之電致變色元件研究 2011
22 Interface Engineering in Binary Metal Oxide Based Resistive Random Access Memory (RRAM) Devices 2010
23 利用金屬嵌入層改善氧化鋯之單極性電阻轉換特性之研究 2010
24 以氧化鋯製備雙層結構電阻式記憶體於單極性電阻轉態特性之研究 2010
25 鎵摻雜尖狀氧化鋅奈米柱陣列的場發射與光學特性之研究
 2010
26 奈米點記憶體元件之製作及其電性特性研究
 2009
27 奈米碳管與錳氧化物奈米複合物超高電容器的製作與其特性之研究
 2009
28 High k / Metal Gate 金氧半場效電晶體 2009
29 氧化鋯電阻式記憶體搭配電晶體之電阻轉換特性研究 2009
30 以氧化鈣摻雜氧化鋯層於單極性電阻轉態效應之研究 2009
31 利用氮化鈦底電極改善溶膠凝膠法製備之鈦酸鉍薄膜電阻轉態特性之研究 2008
32 鈦上電極對濺鍍法製備之氧化鋯薄膜於電阻式轉換記憶元件之研究
 2008
33 鈦上電極對濺鍍法製備之鋯酸鍶薄膜其雙極性電阻轉換特性之研究 2008
34 利用熱氧化法製備氧化銅薄膜於電阻式轉態記憶體之研究
 2008
35 不同電極對濺鍍法製備之氧化鋁薄膜於電阻式轉換記憶體之研究 2008
36 奈米點應用於先進非揮發性記憶體之製作與特性研究
 2008
37 利用擴散摻雜改善鋯酸鍶薄膜記憶體之電阻轉態特性研究 2007
38 鈦上電極與鉬金屬嵌入層對濺鍍法製備之氧化鋯材料於電阻轉換記憶元件之研究 2007
39 尖狀氧化鋅奈米柱陣列之製備與場發射特性之研究
 2007
40 釩摻雜與快速熱退火應用於以濺鍍法製備之鋯酸鍶記憶體元件電阻轉換特性研究
 2007
41 利用金屬嵌入層提升溶膠凝膠法製備之鈦酸鉍薄膜電阻轉態特性
 2007
42 電阻式隨機存取記憶元件之製作、改良與特性研究 2007
43 溶膠凝膠法製備鈦酸鉍薄膜之雙穩態導電率轉換記憶體元件
 2006
44 The Analytical Models and Optimization Designs for VLSI Interconnection
 2006
45 鋯酸鍶基電阻轉換記憶元件之特性研究
 2006
46 利用濺鍍法製備氧化鋁薄膜記憶體元件 2006
47 以濺鍍法製備氧化鋯材料作為雙穩態電阻轉換記憶體之特性研究 2006
48 以濺鍍法製備之鋯酸鍶記憶體元件具有無電壓極性之電阻轉換特性研究
 2006
49 以濺鍍法製備氮摻雜二氧化鈦薄膜物性及光學特性之研究
 2006
50 以溶膠法製備之多重結構的鋯酸鍶記憶體元件之電阻轉換特性研究 2006
51 利用酸式蝕刻氧化鋅奈米線製備氧化鋅奈米管
 2006
52 一維氧化鋅/二氧化鈦核殼結構奈米線之光學與場發射特性研究
 2006
53 奈米碳管、氧化鋅奈米線及其相關元件之特性及應用研究
 2005
54 含鍺摻雜氮化矽薄膜在非揮發性記憶體應用之研究
 2005
55 利用水熱法製備氧化鋁摻雜氧化鋅奈米線及其性質的探討
 2005
56 AAO輔助生成一維氧化鋅奈米陣列之特性研究
 2005
57 釩摻雜鋯酸鍶記憶體薄膜之雙穩態電阻轉換特性
 2005
58 鈣鈦礦結構薄膜應用於半導體記憶體之特性研究 2004
59 氧化鋅奈米結構製作及特性分析之探討
 2004
60 四極射頻金氧半電晶體於雙埠量測下的去寄生效應方法與參數萃取之研究
 2004
61 使用溶膠凝膠法製備之鈣鈦礦結構氧化物薄膜之雙穩態導電率轉換記憶體元件 2004
62 Bistable Conductivity Switching Memory Devices Using Perovskite Oxide Thin Films By Sputtering Method 2004
63 氧化鋯在雙穩態電阻切換式記憶體的特性探討
 2004
64 交流濺鍍法製備之氧化鋅透明導電薄膜之電性及光學性質探討
 2004
65 用有機金屬沉積法製作鐵電薄膜與介電薄膜之電性與物性研究
 2004
66 低介電常數材料在多層導體連線系統上之製程整合研究
 2004
67 薄膜電晶體主動式矩陣面板之陣列技術研究
 2004
68 薄膜電晶體應用在塑膠基板上之研究
 2003
69 正型氧化鋅薄膜之製備及電學性質之研究
 2003
70 Bistable Conductivity Switching Memory Devices Using Perovskite Oxide Thin Films 2003
71 氧化鋅奈米線之製備及特性研究 2002
72 鈦酸鍶閘極氧化層之深空乏層現象與應用在鐵電記憶體之研究 2002
73 有機金屬合成製備之鉭酸鍶鉍薄膜在非揮發性鐵電記憶體之研究 2002
74 液態霧化源沉積系統製備鈦酸鍶鋇薄膜之特性 2001
75 鐵電記憶元件製程及特性之研究 2001
76 鈦酸鍶作為閘極氧化層之電性與電容量測模型之研究 2001
77 具有低介電係數阻障介電層的研究 2001
78 鐵電記憶元件的低溫製程及電流遲滯研究 2001
79 鐵電薄膜介電特性之新型態量測方法與鐵電記憶場效電晶體之元件模型 2001
80 磷化鋁鎵銦材料成長、製程與缺陷分析 2001
81 添加錳對鈦酸鍶鋇薄膜的微觀結構與介電特性的影響 2000
82 濺鍍鈦酸鍶鋇薄膜的電學及微波性質研究 2000
83 濺鍍鉭鈮酸鍶鉍鐵電薄膜特性 2000
84 以溶凝膠法製備鈦酸鍶鋇薄膜之電學及光激光特性分析 2000
85 銪鏑共摻鋁酸鍶系長餘輝螢光體之溶膠/凝膠合成、雜質摻雜與其餘輝與熱發光特性之研究 2000
86 快速加熱低壓化學氣相沈積氧化鉭薄膜電容的底電極材料分析 1999
87 用於微波可調式相位移位器的鈦酸鍶鋇薄膜製備與電性 1999
88 多孔性低介電常數材料之特性研究. 1999
89 鉭鈮酸鍶鉍薄膜的鐵電性質 1999
90 磁控濺鍍氧化鏑與鉭鈮酸鍶鉍鐵電薄膜製備及其性質研究 1998
91 鈦酸鍶鋇薄膜之特性與可靠度研究 1998
92 錳鎳銅薄膜電阻的製備和性質 1998
93 快速加熱低壓化學氣相沈積氧化鉭薄膜之製備與電性 1998
94 交流濺鍍高介電係數氧化物鈦酸鍶鋇和鉭鈮酸鍶鉍薄膜在記憶體電容器之研究 1998
95 溶膠-凝膠法合成釔-鋁氧化物之相變化及其發光與電子自旋共振光譜之研究 1998
96 鉭鈮酸鍶鉍鐵電薄膜的性質 1998
97 場發射顯示器用高亮度用螢光面板的研究 1998
98 交流濺鍍高介電係數氧化物薄膜之電學及光學性質研究 1998
99 濺鍍鈦酸鍶鋇介電薄膜與氧化鋅變阻器的製備與基本性質之研究 1997
100 正溫度電阻係數熱敏電阻器的製程與電性 1997
101 磁控濺鍍氧化物薄膜之製備與其性質之探討 1996
102 反應式磁控濺鍍二氧化釕之成長與性質 1996
103 低溫燒結BME-Z5U鈦酸鋇陶瓷電容器之研究 1996
104 積層式氧化鋅變阻器之製備及氧化鋅變阻器晶界特性與電性關係之研究 1996
105 物理氣相傳輸法成長之硒化鋅單晶的製備及特性研究 1995
106 釔鋇銅氧高溫超導薄膜之場效特性研究 1995
107 攙雜Nb元素之Z5U-BME陶瓷電容器的介電和電學性質之研究 1995
108 以交流磁控濺鍍成長介電薄膜與薄膜基本特性之研究 1995
109 高溫超導材料研製及其微波性質探討 1995
110 各向異性高溫超導之微波及交流響應之研究 1995
111 釔鋇銅氧高溫超導薄膜之微波特性研究 1994
112 攙雜不同附加物下鈦酸鉛鋇正溫度係數電阻之晶界受體態的探討 1994
113 摻雜鐠之氧化鋅變阻器的電學性質與微觀結構研究 1994
114 摻雜稀土元素之Z5U-BME陶瓷電容器的製備和特性研究 1994
115 富含氧化釔陶瓷殼模之低溫燒成研究 1994
116 釔鋇銅氧高溫超導體之製程和磁性研究 1993
117 釔鋇銅氧高溫超導體添加銀的磁性研究 1993
118 空氣中燒結之鈦酸鍶變阻器電學性質的研究 1993
119 以溶膠-凝膠法製備PLT鐵電薄膜及其電性之研究 1993
120 釔鋇銅氧高溫超導薄膜製備及其紅外線偵測之研究 1993
121 BME-Z5U 鈦酸鋇陶瓷電容器製程之研究 1993
122 Z5U-BME陶瓷電容器之製備與特性研究 1993
123 高居里點之鈦酸鉛鋇正溫度係數電阻陶瓷的電氣特性 1993
124 氧化鋅變阻器電學性質之研究 1992
125 高溫超導體之順磁邁斯納效應及微波元件特性研究 1992
126 以反應性交流磁控濺鍍系統成長碳化鈦薄膜之研究 1992
127 釔鋇銅氧高溫超導薄膜製作及其紅外線偵測之研究 1992
128 積層式氧化鋅變阻器之製備與電性研究 1992
129 PLZT鐵電性薄膜之溶膠-凝膠製程和特性研究 1992
130 Ambient-pressure preparation and characterizations of bulk and thin film of superconducting YBa□Cu□O□ 1992
131 正溫度係數熱敏電阻鈦酸鋇陶瓷之電性研究與微結構分析 1991
132 反應性交流高頻濺散法及碳化鈦鍍膜之研究 1991
133 Ultrasonic piezlectric microphone 1991
134 溶膠-凝膠法製備PLZT薄膜及特性研究 1991
135 釔鋇銅氧高溫超導薄膜的功率損失及紅外線偵測性質研究 1991
136 添加物對於PMN 陶瓷介電材料特性影響之研究 1990
137 燒程度輿添加劑對錳鋅鐵氧磁體性質之影響 1990
138 添加玻璃之氧化鋅變阻器之製備與電性研究 1990
139 化學共沈法製備錳鋅鐵氧磁體 1990
140 利用共沉粉末製備氧化鋅變阻器之研究 1990
141 添加物對於PMN陶瓷介電材料特性影響之研究 1990
142 單簧式鋯鈦酸鉛之製作及在超音波空中換能之應用 1989
143 Tl-Ca-Ba-Cu-O超導薄膜及弱聯結約瑟夫森微橋式接合之製備與特性之研究 1989
144 鈦酸鉛鋇正溫度係數電阻之特性分析 1989
145 釔鋇銅氧高溫超導薄膜製作及其在紅外線偵測方面之應用 1989
146 鋯膠液混合氧化釔粉末之陶瓷殼模的製備 1989
147 多孔性鈦酸鋇鍶基陶瓷溼度感測器的電氣特性 1988
148 降溫速率對鑭加成鈦酸鋇基正溫度電阻係數的影響效應 1988
149 添加銀的高溫超導材料釔鋇銅氧化物的電學性質 1988
150 鈦酸鉛鋇正溫度係數電阻之特性研究 1988
151 降溫速率對鑭加成鈦酸鋇基正溫度電阻係數的影響效應 1988
152 顯微結構對快速鋰離子導驗的電學特性之影響 1987
153 細晶粒鎳鋅鐵氧磁體之製備及電性與磁性之研究 1987
154 錳鋅鐵氧磁體顯微結構與磁性、電性之關係 1987
155 氧化鋯質材之顯微結構對機械和電學性質之影響 1986
156 鈦酸鋇基正溫度電阻係數陶瓷感測器 1986
157 酊酸鋇基正溫度電阻係數陶瓷感測器 1986
158 不同添加物與燒結氣氛對錳鋅陶氧磁體特性與細微結構的影響 1985
159 鋇鐵氧磁體的顯微結構及特性之製程控制 1985
160 積層式氧化鋅變阻器之製備與電性研究 1984
161 不同氣氛對模型二氧化矽片的燒結影響 1984
162 氧化鋯質耐火材料之製備 1984
163 衍自凝膠之氧化鎂部分穩定化氧化鋯的相變態與燒結 1984
164 加鐵β”氧化鋁的燒結及梅思堡效應研究 1984
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