1 |
Mechanism of High Temperature Retention Property (up to 200 degrees C) in ZrO2-Based Memory Device With Inserting a ZnO Thin Layer |
2014-10-01 |
2 |
Compact Ga-Doped ZnO Nanorod Thin Film for Making High-Performance Transparent Resistive Switching Memory |
2014-10-01 |
3 |
A novel strongly correlated electronic thin-film laser energy/power meter based on anisotropic Seebeck effect
|
2014-09-01 |
4 |
High energy density asymmetric pseudocapacitors fabricated by graphene/carbon nanotube/MnO2 plus carbon nanotubes nanocomposites electrode
|
2014-08-01 |
5 |
Resistive switching characteristics of Pt/CeOx/TiN memory device
|
2014-06-01 |
6 |
On the Origin of Anomalous OffCurrent Under Hot Carrier Stress in p-Channel DDDMOS Transistors With STI Structure
|
2014-06-01 |
7 |
Hydrothermal Formation of Tungsten Trioxide Nanowire Networks on Seed-Free Substrates and Their Properties in Electrochromic Device
|
2014-05-01 |
8 |
Investigation of abnormal negative threshold voltage shift under positive bias stress in input/output n-channel metal-oxide-semiconductor field-effect transistors with TiN/HfO2 structure using fast I-V measurement
|
2014-03-17 |
9 |
Switching mechanism of double forming process phenomenon in ZrOx/HfOy bilayer resistive switching memory structure with large endurance
|
2014-02-10 |
10 |
Forming-free bipolar resistive switching in nonstoichiometric ceria films
|
2014-01-27 |
11 |
Electrophoretic fabrication and pseudocapacitive properties of graphene/manganese oxide/carbon nanotube nanocomposites
|
2013-12-01 |
12 |
High-k shallow traps observed by charge pumping with varying discharging times
|
2013-11-07 |
13 |
A high-performance laser energy meter based on anisotropic Seebeck effect in a strongly correlated electronic thin film
|
2013-11-01 |
14 |
Abnormal threshold voltage shift under hot carrier stress in Ti1-xNx/HfO2 p-channel metal-oxide-semiconductor field-effect transistors
|
2013-09-28 |
15 |
Resistive switching behavior of sol-gel deposited TiO2 thin films under different heating ambience
|
2013-09-01 |
16 |
Characterization of environment-dependent hysteresis in indium gallium zinc oxide thin film transistors
|
2013-09-01 |
17 |
Unipolar resistive switching behavior in Pt/HfO2/TiN device with inserting ZrO2 layer and its 1 diode-1 resistor characteristics
|
2013-07-15 |
18 |
Unipolar Resistive Switching in ZrO2 Thin Films
|
2013-04-01 |
19 |
Investigation of extra traps measured by charge pumping technique in high voltage zone in p-channel metal-oxide-semiconductor field-effect transistors with HfO2/metal gate stacks
|
2013-01-07 |
20 |
Investigation of an anomalous hump in gate current after negative-bias temperature-instability in HfO2/metal gate p-channel metal-oxide-semiconductor field-effect transistors
|
2013-01-07 |
21 |
Improved Resistive Switching Characteristics by Al2O3 Layers Inclusion in HfO2-Based RRAM Devices
|
2013-01-01 |
22 |
Investigation of Lateral Trap Position by Random Telegraph Signal Analysis in Moderate Inversion in n-Channel MOSFETs
|
2013-01-01 |
23 |
Anomalous Gate Current Hump after Dynamic Negative Bias Stress and Negative-Bias Temperature-Instability in p-MOSFETs with HfxZr1-xO2 and HfO2/Metal Gate Stacks
|
2013-01-01 |
24 |
Analysis of anomalous traps measured by charge pumping technique in HfO2/metal gate n-channel metal-oxide-semiconductor field-effect transistors
|
2012-12-03 |
25 |
Electrical Properties and Reliability of ZnO-Based Nanorod Current Emitters
|
2012-07-01 |
26 |
"Field Emission Properties and Reliability of ZnO Nanorod, Nanopagoda, and Nanotip Current Emitters" |
2012-07-01 |
27 |
Unipolar Resistive Switching Characteristics of a ZrO2 Memory Device With Oxygen Ion Conductor Buffer Layer
|
2012-06-01 |
28 |
A study on low-power, nanosecond operation and multilevel bipolar resistance switching in Ti/ZrO2/Pt nonvolatile memory with 1T1R architecture
|
2012-06-01 |
29 |
ZnO nanorods grown on polymer substrates as UV photodetectors
|
2012-05-01 |
30 |
Fabrication and resistive switching characteristics of high compact Ga-doped ZnO nanorod thin film devices
|
2012-04-13 |
31 |
Resistive switching characteristics of nickel silicide layer embedded HfO2 film
|
2012-03-12 |
32 |
Bottom Electrode Modification of ZrO2 Resistive Switching Memory Device with Au Nanodots
|
2012-02-01 |
33 |
Oxygen-Adsorption-Induced Anomalous Capacitance Degradation in Amorphous Indium-Gallium-Zinc-Oxide Thin-Film-Transistors under Hot-Carrier Stress
|
2012-01-01 |
34 |
Robust unipolar resistive switching of Co nano-dots embedded ZrO(2) thin film memories and their switching mechanism |
2012-01-01 |
35 |
Surface states related the bias stability of amorphous In-Ga-Zn-O thin film transistors under different ambient gasses
|
2011-12-30 |
36 |
Forming-free resistive switching behaviors in Cr-embedded Ga(2)O(3) thin film memories |
2011-12-01 |
37 |
Nitric Acid Oxidized ZrO(2) as the Tunneling Oxide of Cobalt Silicide Nanocrystal Memory Devices |
2011-09-01 |
38 |
Investigation for coexistence of dual resistive switching characteristics in DyMn(2)O(5) memory devices |
2011-08-29 |
39 |
Low-Power and Highly Reliable Multilevel Operation in ZrO(2) 1T1R RRAM |
2011-08-01 |
40 |
Environment-dependent thermal instability of sol-gel derived amorphous indium-gallium-zinc-oxide thin film transistors
|
2011-04-11 |
41 |
High Device Yield of Resistive Switching Characteristics in Oxygen-Annealed SrZrO(3) Memory Devices |
2011-04-01 |
42 |
Dopant Activation in Single-Crystalline Germanium by Low-Temperature Microwave Annealing
|
2011-02-01 |
43 |
H(2)O-Assisted O(2) Adsorption in Sol-Gel Derived Amorphous Indium Gallium Zinc Oxide Thin Film Transistors |
2011-01-01 |
44 |
Influence of H(2)O Dipole on Subthreshold Swing of Amorphous Indium-Gallium-Zinc-Oxide Thin Film Transistors |
2011-01-01 |
45 |
Influence of Nanocrystals on Resistive Switching Characteristic in Binary Metal Oxides Memory Devices |
2011-01-01 |
46 |
Electrophoretic Fabrication and Characterizations of Manganese Oxide/Carbon Nanotube Nanocomposite Pseudocapacitors
|
2011-01-01 |
47 |
Controllable oxygen vacancies to enhance resistive switching performance in a ZrO(2)-based RRAM with embedded Mo layer |
2010-12-10 |
48 |
Multilevel resistive switching in Ti/Cu(x)O/Pt memory devices |
2010-12-01 |
49 |
Hydrogen Gas Sensors Using ZnO-SnO(2) Core-Shell Nanostructure |
2010-12-01 |
50 |
Size-dependent field-emission characteristics of ZnO nanowires grown by porous anodic aluminum oxide templates assistance
|
2010-10-01 |
51 |
Formation of the distributed NiSiGe nanocrystals nonvolatile memory formed by rapidly annealing in N(2) and O(2) ambient |
2010-10-01 |
52 |
Effects of Vanadium Doping on Resistive Switching Characteristics and Mechanisms of SrZrO(3)-Based Memory Films |
2010-08-01 |
53 |
High-speed and localized resistive switching characteristics of double-layer SrZrO(3) memory devices |
2010-07-28 |
54 |
Bias-induced oxygen adsorption in zinc tin oxide thin film transistors under dynamic stress
|
2010-06-28 |
55 |
Second Phase and Defect Formation in Bi(0.5)Na(0.5-x)K(x)TiO(3) Ceramics |
2010-06-01 |
56 |
Correlation of Microstructures and Conductivities of Ferroelectric Ceramics Using Complex Impedance Spectroscopy
|
2010-06-01 |
57 |
Charge storage characteristics of high density Mo nanocrystal embedded in silicon oxide and silicon nitride
|
2010-02-24 |
58 |
Ti-Induced Recovery Phenomenon of Resistive Switching in ZrO(2) Thin Films |
2010-01-01 |
59 |
High Density Ni Nanocrystals Formed by Coevaporating Ni and SiO(2) Pellets for the Nonvolatile Memory Device Application |
2010-01-01 |
60 |
Nitric Acid Oxidation of Si for the Tunneling Oxide Application on CoSi(2) Nanocrystals Nonvolatile Memory |
2010-01-01 |
61 |
Effects of Ti top electrode thickness on the resistive switching behaviors of rf-sputtered ZrO(2) memory films |
2009-09-14 |
62 |
The structural and optical properties of ZnO nanowire arrays prepared by hydrothermal synthesis method
|
2009-07-01 |
63 |
Nanotip fabrication of zinc oxide nanorods and their enhanced field emission properties
|
2009-03-25 |
64 |
Cobalt nanodots formed by annealing the CoSiO layer for the application of the nonvolatile memory
|
2009-03-09 |
65 |
Electrical and optical properties of ZnO:Al thin films grown by magnetron sputtering
|
2009-03-01 |
66 |
NiSiGe nanocrystals for nonvolatile memory devices
|
2009-02-09 |
67 |
Improved reliability of Mo nanocrystal memory with ammonia plasma treatment
|
2009-02-09 |
68 |
Charge Storage Characteristics of Mo Nanocrystal Memory Influenced by Ammonia Plasma Treatment
|
2009-01-01 |
69 |
Improvement of Charge-Storage Characteristics of Mo Nanocrystal Memory by Double-Layer Structure
|
2009-01-01 |
70 |
Enhancement of NiSi-Based Nanocrystal Formation by Incorporating Ge Elements for Nonvolatile Memory Devices
|
2009-01-01 |
71 |
Charge storage characteristics of Mo nanocrystal dependence on Mo oxide reduction
|
2008-12-01 |
72 |
Improvement of resistive switching characteristics in SrZrO3 thin films with embedded Cr layer
|
2008-10-01 |
73 |
Preparation and Characterizations of ZnO Nanotubes by Acidic Etching Nanowires |
2008-09-01 |
74 |
Optical Properties of Ce-Doped ZnO Nanowires Directionally Grown by Hydrothermal Method |
2008-09-01 |
75 |
Formation of Core/Shell-Type ZnO/CeO(2) Nanorods and CeO(2) Nanotube Arrays by Aqueous Synthesis and Wet-Etching |
2008-06-01 |
76 |
Formation of cobalt-silicide nanocrystals in Ge-doped dielectric layer for the application on nonvolatile memory
|
2008-04-14 |
77 |
Electrical properties and fatigue behaviors of ZrO(2) resistive switching thin films |
2008-01-01 |
78 |
Formation of Mo silicide nanodot memory by rapid thermal annealing dual electron-gun evaporated Mo-Si layer |
2008-01-01 |
79 |
Voltage-polarity-independent and high-speed resistive switching properties of v-doped SrZrO3 thin films
|
2007-12-01 |
80 |
Modified resistive switching behavior of ZrO2 memory films based on the interface layer formed by using Ti top electrode
|
2007-11-01 |
81 |
Well-aligned ternary Cd1-xZnxS nanowire Arrays and their composition-dependent field emission properties
|
2007-09-13 |
82 |
SrTiO3-SiO2 oxide films for possible high-k gate dielectric applications
|
2007-07-31 |
83 |
Effect of top electrode material on resistive switching properties of ZrO2 film memory devices
|
2007-05-01 |
84 |
Resistance switching properties of sol-gel derived SrZrO3 based memory thin films
|
2007-04-07 |
85 |
Resistive switching mechanisms of V-doped SrZrO3 memory films
|
2006-09-01 |
86 |
Formation of germanium nanocrystals embedded in silicon-oxygen-nitride layer
|
2006-07-31 |
87 |
Field-emission triode of low-temperature synthesized ZnO nanowires
|
2006-05-01 |
88 |
Electrical properties of resistance switching V-doped SrZrO3 films on textured LaNiO3 bottom electrodes
|
2006-03-21 |
89 |
Effect of phosphorus dopant on photoluminescence and field-emission characteristics of Mg0.1Zn0.9O nanowires
|
2006-01-15 |
90 |
Electrical characterizations of a controllable field emission triode based on low temperature synthesized ZnO nanowires
|
2006-01-14 |
91 |
Gate-controlled ZnO nanowires for field-emission device application
|
2006-01-01 |
92 |
A fabrication of germanium nanocrystal embedded in silicon-oxygen-nitride layer |
2006-01-01 |
93 |
High-performance hydrogenated amorphous-Si TFT for AMLCD and AMOLED applications
|
2005-10-01 |
94 |
Surface chemical and leakage current density characteristics of nanocrystalline Ag-Ba0.5Sr0.5TiO3 thin films
|
2005-09-01 |
95 |
Single-crystalline MgxZn1-xO (0 <= x <= 0.25) nanowires on glass substrates obtained by a hydrothermal method: growth, structure and electrical characteristics
|
2005-08-01 |
96 |
Dielectric and electrical properties of SrTiO(3+/-y)-(SiO2)(x) thin films
|
2005-07-21 |
97 |
ZnO nanowires hydrothermally grown on PET polymer substrates and their characteristics |
2005-07-01 |
98 |
Bistable resistive switching of a sputter-deposited Cr-doped SrZrO3 memory film
|
2005-06-01 |
99 |
Low temperature synthesized Sn doped indium oxide nanowires
|
2005-04-01 |
100 |
Electrical degradation of N-channel poly-Si TFT under AC stress |
2005-01-01 |
101 |
Characteristics and electrochemical performance of supercapacitors with manganese oxide-carbon nanotube nanocomposite electrodes
|
2005-01-01 |
102 |
Effects of oxygen plasma ashing on barrier dielectric SiCN film |
2005-01-01 |
103 |
Fabrication of vertical ZnO nanowires on silicon(100) with epitaxial ZnO buffer layer |
2004-11-01 |
104 |
Effect of Sn dopant on the properties of ZnO nanowires
|
2004-08-21 |
105 |
Dielectric characteristics of nanocrystalline Ag-Ba0.5Sr0.5TiO3 composite thin films
|
2004-08-16 |
106 |
Effect of atmosphere on growth of single crystal zinc oxide nanowires
|
2004-08-01 |
107 |
Memory properties of metal/ferroelectric/semiconductor and metal/ferroelectric/insulator/semiconductor structures using rf sputtered ferroelectric Sr0.8Bi2.5Ta1.2Nb0.8O9 thin films
|
2004-07-01 |
108 |
Deep depletion phenomenon of SrTiO3 gate dielectric capacitor
|
2004-05-15 |
109 |
Method to improve chemical-mechanical-planarization polishing rate of low-k methyl-silsesquiazane for ultralarge scale integrated interconnect application
|
2004-05-01 |
110 |
Field emission and photofluorescent characteristics of zinc oxide nanowires synthesized by a metal catalyzed vapor-liquid-solid process
|
2004-04-01 |
111 |
Electrical and dielectric behavior of fluorite-like Sr0.8Bi2.6Ta2O9 thin films pyrolyzed and thermally annealed at 450 degrees C
|
2004-02-15 |
112 |
Preferentially oriented ferroelectric Pb(Zr0.53Ti0.47)O(3)thin films on (110)BaRuO3/Ru/SiO2/Si substrates |
2004-01-01 |
113 |
Pattern profile distortion and stress evolution in nanoporous organosilicates after photoresist stripping |
2004-01-01 |
114 |
CMP of low-k methylsilsesquiazane with oxygen plasma treatment for multilevel interconnect applications |
2004-01-01 |
115 |
Studies on ferroelectric properties of sol-gel derived Pb(Zr0.53Ti0.47)O-3 using Ba0.5Sr0.5RuO3 as the conductive electrodes
|
2004-01-01 |
116 |
Electrical and dielectric properties of low-temperature crystallized Sr0.8Bi2.6Ta2O9+x thin films on Ir/SiO2/Si substrates
|
2003-12-20 |
117 |
Improvement in retention time of metal-ferroelectric-metal-insulator-semiconductor structures using MgO doped Ba0.7Sr0.3TiO3 insulator layer
|
2003-08-04 |
118 |
Moisture-induced material instability of porous organosilicate glass |
2003-04-01 |
119 |
Electrical and dielectric properties of (Ba0.5Sr0.5)TiO3 thin films prepared by a hydroxide-alkoxide precursor-based sol-gel method
|
2003-01-02 |
120 |
Device Modeling of ferroelectric memory field-effect transistor for the application of ferroelectric random access memory
|
2003-01-01 |
121 |
Copper-catalyzed ZnO nanowires on silicon (100) grown by vapor-liquid-solid process
|
2003-01-01 |
122 |
Effects of nitridation of silicon and repeated spike heating on the electrical properties of SrTiO3 gate dielectrics
|
2002-12-02 |
123 |
Device modeling of ferroelectric memory field-effect transistor (FeMFET)
|
2002-10-01 |
124 |
An improved two-frequency method of capacitance measurement for SrTiO3 as high-k gate dielectric
|
2002-09-01 |
125 |
Dependence of luminescence efficiency on dopant concentration and sintering temperature in the erbium-doped Ba0.7Sr0.3TiO3 thin films
|
2002-08-15 |
126 |
Characterization of porous silicate for ultra-low k dielectric application
|
2002-07-01 |
127 |
Microwave penetration depth measurement for high T-c superconductors by dielectric resonators
|
2002-06-01 |
128 |
Deep electron trapping centers in Te-doped (AlxGa1-x)(0.5)In0.5P (x=0.5) layers grown by metal-organic chemical vapor deposition
|
2002-06-01 |
129 |
Enhanced ferroelectric properties of Pb(Zr0.53Ti0.47)O-3 thin films on SrRuO3/Ru/SiO2/Si substrates
|
2002-05-20 |
130 |
A method to characterize the dielectric and interfacial properties of metal-insulator-semiconductor structures by microwave measurement
|
2002-04-15 |
131 |
Dielectric tunability of barium strontium titanate films prepared by a sol-gel method
|
2002-04-03 |
132 |
Electrical and dielectric behavior of MgO doped Ba0.7Sr0.3TiO3 thin films on Al2O3 substrate
|
2002-03-11 |
133 |
Generalized interconnect delay time and crosstalk models: I. Applications of interconnect optimization design
|
2001-12-01 |
134 |
Generalized interconnect delay time and crosstalk models: II. Crosstalk-induced delay time deterioration and worst crosstalk models
|
2001-12-01 |
135 |
The effects of low-pressure rapid thermal post-annealing on the properties of (Ba,Sr)TiO3 thin films deposited by liquid source misted chemical deposition
|
2001-12-01 |
136 |
Deep hole traps created by gamma-ray irradiation of GaInP
|
2001-12-01 |
137 |
Application of on-wafer TRL calibration on the measurement of microwave properties of Ba0.5Sr0.5TiO3 thin films
|
2001-11-01 |
138 |
Gamma-ray induced deep electron traps in GaInP
|
2001-09-01 |
139 |
Thermal-treatment induced deep electron traps in AlInP
|
2001-08-01 |
140 |
Elimination of dielectric degradation for chemical-mechanical planarization of low-k hydrogen silisesquioxane
|
2001-05-01 |
141 |
Effects of ceramic processing parameters on the microstructure and dielectric properties of (Ba1-xCax)(Ti0.99-y, ZryMn0.01)O-3 sintered in a reducing atmosphere
|
2001-02-01 |
142 |
The effect of oxygen-to-argon ratio on the electrical and reliability characteristics of sputtered Sr0.8Bi2.5Ta1.2Nb0.9O9+x thin films
|
2000-08-22 |
143 |
Sintering BaTi4O9/Ba2Ti9O20-based ceramics by glass addition
|
2000-07-01 |
144 |
Effects of calcination temperature and A/B ratio on the dielectric properties of (Ba,Ca)(Ti,Zr,Mn)O-3 for multilayer ceramic capacitors with nickel electrodes
|
2000-06-01 |
145 |
Study of linear and nonlinear optical properties of distorted Ti-O-6 perovskite structure in BaxSr1-xTiO3
|
2000-06-01 |
146 |
Surface modification of Dy2O3-Nb2O5 dope mix for dielectric materials in aqueous dispersion
|
2000-06-01 |
147 |
Dielectric relaxation and defect analysis of Ta2O5 thin films
|
2000-05-21 |
148 |
Effect of bottom electrodes on resistance degradation and breakdown of (Ba, Sr)TiO3 thin films
|
2000-03-01 |
149 |
Effects of A/B cation ratio on the microstructure and lifetime of (Ba1-xCax)(z)(Ti0.99-y ZryMn0.01)O-3 (BCTZM) sintered in reducing atmosphere
|
2000-03-01 |
150 |
Electrical properties of Ta2O5 thin films deposited on Cu
|
2000-02-01 |
151 |
Structure-related optical properties of rapid thermally annealed Ba0.7Sr0.3TiO3 thin films
|
1999-11-01 |
152 |
Preparation of aluminum film on phosphor screen for field emission display
|
1999-10-15 |
153 |
Effect of oxygen to argon ratio on defects and electrical conductivities in Ba0.47Sr0.53TiO3 thin-film capacitors
|
1999-09-07 |
154 |
Effect of bottom electrode materials on the electrical and reliability characteristics of (Ba, Sr)TiO3 capacitors
|
1999-09-01 |
155 |
Mixing macro and micro flowtime estimation model: wafer fab example
|
1999-07-20 |
156 |
Analysis of AC electrical response for radio-frequency sputtered (Ba0.5Sr0.5)TiO3 thin film
|
1999-06-01 |
157 |
Promotion of phase transformation and single-phase formation in silver-doped Tl-Ba-Ca-Cu-O superconducting thin films
|
1999-05-01 |
158 |
Ba(Ti0.8Sn0.2)O-3 thin films prepared by radio-frequency magnetron sputtering for dynamic random access memory applications |
1999-05-01 |
159 |
Electrical properties of Ta2O5 thin films deposited on Ta
|
1999-04-26 |
160 |
Short-duration rapid-thermal-annealing processing of tantalum oxide thin films
|
1999-03-01 |
161 |
Electron paramagnetic resonance and luminescence study of sol-gel derived YAG : Cr powder
|
1999-03-01 |
162 |
Electrical properties of rapid thermal-enhanced low pressure chemical vapor deposited Ta2O5 thin films |
1999-03-01 |
163 |
Involvement of scattered UV light in the generation of photoluminescence in powdered phosphor screens
|
1999-02-21 |
164 |
Effect of bottom electrode materials and annealing treatments on the electrical characteristics of Ba0.47Sr0.53TiO3 film capacitors
|
1999-02-01 |
165 |
Formation behavior of high-T-c Tl-based superconductors
|
1999-02-01 |
166 |
Effect of bismuth content on the properties of Sr0.8BixTa1.2 Nb0.9O9+y ferroelectric thin films
|
1999-01-15 |
167 |
Optical and structural properties of (Ba, Sr)TiO3 thin films grown by radio-frequency magnetron sputtering
|
1999-01-01 |
168 |
Effect of bottom electrodes on dielectric relaxation and defect analysis of (Ba0.47Sr0.53)TiO3 thin film capacitors
|
1998-11-01 |
169 |
Effect of LiCl on the crystallization behavior and luminescence of Y3Al5O12 : Tb
|
1998-11-01 |
170 |
Preparation and characteristics of Bi-Pb-Sr-Ca-Cu-O superconducting films by spray pyrolysis and post-annealing
|
1998-10-15 |
171 |
Phase development and activation energy of the Y2O3-Al2O3 system by a modified sol-gel process
|
1998-09-30 |
172 |
Preparation and electronic properties of YBa2Cu3Ox films with controlled oxygen stoichiometries
|
1998-08-01 |
173 |
Conduction mechanism and temperature-dependent current-voltage in (Ba, Sr)TiO3 thin films
|
1998-08-01 |
174 |
Conduction mechanisms in amorphous and crystalline Ta2O5 thin films |
1998-05-01 |
175 |
Electrical characteristics of (Pb,Sr)TiO3 positive temperature coefficient ceramics
|
1998-05-01 |
176 |
Sr0.8Bi2.5Ta1.2Nb0.9O9+x ferroelectric thin films prepared by two-target off-axis radio frequency magnetron sputtering |
1998-04-06 |
177 |
Correlation of grain boundary characteristics with electrical properties in ZnO-glass varistors |
1998-02-01 |
178 |
Highly oriented (Zr0.7Sn0.3)TiO4 thin films grown by rf magnetron sputtering
|
1998-02-01 |
179 |
Electrical properties of O-2 and N-2 annealed (Ba,Sr)TiO3 thin films
|
1998-01-01 |
180 |
Effect of oxygen to argon ratio on properties of (Ba,Sr)TiO3 thin films prepared by radio-frequency magnetron sputtering |
1997-10-01 |
181 |
Structural and electrical properties of cerium dioxide films grown by RF magnetron sputtering
|
1997-10-01 |
182 |
Characterization of yttria-stabilized zirconia thin films grown by planar magnetron sputtering
|
1997-08-28 |
183 |
Off-axis unbalanced magnetron sputtering of YBa2Cu3O7 thin films
|
1997-07-01 |
184 |
Electronic defect and trap-related current of (Ba0.4Sr0.6)TiO3 thin films |
1997-05-15 |
185 |
Influence of crystal structure on the fatigue properties of Pb1-xLax(Zr-y,Ti-z)O-3 thin films prepared by pulsed-laser deposition technique
|
1997-05-01 |
186 |
Effective microwave surface impedance of superconducting films in the mixed state
|
1997-05-01 |
187 |
Effects of spinel phase formation in the calcination process on the characteristics of ZnO-glass varistors
|
1997-04-01 |
188 |
Resistive response to a microwave field in high temperature superconducting crystals
|
1997-03-15 |
189 |
A-axis YBCO thin films deposited by DC magnetron sputtering
|
1997-01-01 |
190 |
Growth and fatigue properties of pulsed laser deposited Pb1-xLax(ZryTiz)O-3 thin films with [001] preferred orientation |
1996-12-01 |
191 |
Preparation and characterization of PLZT thin films by sol-gel processing |
1996-12-01 |
192 |
The interaction between a single vortex and a columnar defect in the superconducting multilayers
|
1996-10-01 |
193 |
Degradation phenomena of multilayer ZnO-glass varistors studied by deep level transient spectroscopy |
1996-09-16 |
194 |
Microstructure and crystal phases of praseodymium oxides in zinc oxide varistor ceramics |
1996-09-01 |
195 |
Grain-boundary surface states of (Ba, Pb)TiO3 positive temperature coefficient ceramics doped with different additives and its influence on electrical properties
|
1996-09-01 |
196 |
AC permeability of the flux-line liquid in the anisotropic high-T-c superconducting crystals
|
1996-09-01 |
197 |
Interaction between a two-dimensional pancake vortex and a circular nonsuperconducting defect |
1996-07-01 |
198 |
Microwave response of superconducting platelet crystals |
1996-07-01 |
199 |
High-frequency vortex response of anisotropic type-II superconductors |
1996-07-01 |
200 |
Microwave surface impedances of BCS superconducting thin films
|
1996-06-01 |
201 |
Interdiffusion of multilayer ferroelectric thin films using YBa2Cu3O7-x as an intermediate layer |
1996-05-15 |
202 |
Fabrication and microstructure of the dc-magnetron-sputtered YBa2Cu3O7-x superconducting thin films |
1996-04-01 |
203 |
AC response of the vortex liquid in the high-T-c superconducting cylinder
|
1996-04-01 |
204 |
On the off stoichiometry of cerium oxide thin films deposited by RF sputtering
|
1996-04-01 |
205 |
Vortex response to the ac field in anisotropic high-T-c superconductors
|
1996-03-01 |
206 |
Effects of oxygen-argon mixing on the electrical and physical properties of ZrTiO4 films sputtered on silicon at low temperature |
1995-12-15 |
207 |
Modification on the surface of superconducting YBa2Cu3O7-x films by microwave plasma-enhanced pulsed laser deposition |
1995-12-15 |
208 |
DEGRADATION PHENOMENA DUE TO IMPULSE-CURRENT IN ZINC-OXIDE VARISTORS |
1995-10-01 |
209 |
PRESSURE EFFECT ON YBA2CU3O7 THIN-FILM GROWTH IN OFF-AXIS RADIO-FREQUENCY MAGNETRON SPUTTERING
|
1995-09-01 |
210 |
EFFECTS OF SUBSTRATE-TEMPERATURE AND OXYGEN PARTIAL-PRESSURE ON THE PROPERTIES OF SPUTTERED ZIRCONIUM TITANATE THIN-FILMS
|
1995-09-01 |
211 |
CHARACTERISTIC ANALYSIS OF ZNO VARISTORS MADE WITH SPHERICAL PRECIPITATION POWDERS
|
1995-07-01 |
212 |
GROWTH AND FERROELECTRICITY OF EPITAXIAL-LIKE BATIO3 FILMS ON SINGLE-CRYSTAL MGO, SRTIO3, AND SILICON SUBSTRATES SYNTHESIZED BY PULSED-LASER DEPOSITION |
1995-06-15 |
213 |
GROWTH OF EPITAXIAL-LIKE (SR0.5BA0.5)NB2O6 FERROELECTRIC-FILMS
|
1995-05-15 |
214 |
OPTICAL-PROPERTIES OF ZRTIO4 FILMS GROWN BY RADIOFREQUENCY MAGNETRON SPUTTERING |
1995-05-01 |
215 |
INFLUENCE OF PROCESSING PARAMETERS ON THE MICROSTRUCTURE AND ELECTRICAL-PROPERTIES OF MULTILAYER-CHIP ZNO VARISTORS |
1995-04-01 |
216 |
THE EFFECTS OF ND2O3 ADDITIVES AND AL2O3-SIO2-TIO2 SINTERING AIDS ON THE ELECTRICAL-RESISTIVITY OF (BA,SR)TIO3 PTCR CERAMICS
|
1995-04-01 |
217 |
PARAMAGNETIC MEISSNER EFFECT OF HIGH-TEMPERATURE GRANULAR SUPERCONDUCTORS - INTERPRETATION BY ANISOTROPIC AND ISOTROPIC MODELS |
1995-02-01 |
218 |
DOUBLE RESONANT BEHAVIOR OF MICROSTRIP RING-RESONATOR IN TL-BASED HIGH T-C SUPERCONDUCTING FILMS |
1994-12-19 |
219 |
ELECTRICAL-PROPERTIES OF MULTILAYER-CHIP ZNO VARISTORS IN A MOIST-AIR ENVIRONMENT |
1994-11-01 |
220 |
GROWTH PARAMETER EFFECT IN SUPERCONDUCTING YBA2CU4O8 THIN-FILMS BY DC MAGNETRON SPUTTERING |
1994-11-01 |
221 |
INVESTIGATION OF RESISTIVITY AND PERMITTIVITY FOR (BA,PB)TIO3 PTCR CERAMICS |
1994-09-01 |
222 |
GROWTH-BEHAVIOR OF Y1BA2CU3O7-X SUPERCONDUCTING THIN-FILMS USING LASER-ABLATION TECHNIQUE
|
1994-07-01 |
223 |
GROWTH OF HIGHLY ORIENTED ZRTIO(4) THIN-FILMS BY RADIOFREQUENCY MAGNETRON SPUTTERING
|
1994-06-13 |
224 |
ANALYSIS OF THE AC ELECTRICAL RESPONSE FOR (BA,PB)TIO3 POSITIVE TEMPERATURE-COEFFICIENT CERAMICS
|
1994-06-01 |
225 |
PREPARATION AND CHARACTERIZATION OF TL-BA-CA-CU-O SUPERCONDUCTING FILMS BY SPRAY-PYROLYSIS AND TL-DIFFUSION TECHNIQUE |
1994-01-01 |
226 |
THE ROLE OF DRYING-CONTROL CHEMICAL ADDITIVES ON THE PREPARATION OF SOL-GEL DERIVED PLZT THIN-FILMS |
1993-12-15 |
227 |
CALCULATIONS AND MODELING OF GRAIN-BOUNDARY ACCEPTOR STATES FOR (BA,PB)TIO3 POSITIVE TEMPERATURE-COEFFICIENT CERAMICS |
1993-09-01 |
228 |
INFLUENCE OF SINTERING PROFILE ON THE RESISTIVITY OF LOW-CURIE-POINT PTCR CERAMICS |
1993-08-01 |
229 |
INFLUENCE OF SINTERING TEMPERATURE ON ELECTRICAL-PROPERTIES OF ZNO VARISTORS |
1993-07-01 |
230 |
INTERPRETATION OF THE ANOMALOUS FIELD-COOLED-MAGNETIZATION BEHAVIOR OF HIGH-TEMPERATURE GRANULAR SUPERCONDUCTORS AT LOW MAGNETIC-FIELD |
1993-07-01 |
231 |
EFFECT OF AG2O ADDITIVE ON MICROSTRUCTURE AND SUPERCONDUCTIVITY OF THE TL2BA2CA2CU3OY COMPOUND |
1993-06-21 |
232 |
SUPERCONDUCTING PROPERTIES OF ORIENTED YBA2CU3O7-X FILMS ON MGO AND SRTIO3 SUBSTRATES |
1993-05-01 |
233 |
BOLOMETRIC RESPONSE OF SUPERCONDUCTING YBA2CU3O7-X MICROBRIDGES |
1992-12-15 |
234 |
THE EFFECT OF GRAIN-BOUNDARIES ON THE ELECTRICAL-PROPERTIES OF ZINC OXIDE-BASED VARISTOR |
1992-11-01 |
235 |
FLUX MOTION DEPENDENCE OF RESISTIVE PROPERTIES IN SUPERCONDUCTING YBA2CU3O7-X THIN-FILMS |
1992-08-01 |
236 |
COPPER VALENCY OF SUPERCONDUCTING PHASES IN THE PB-DOPED BI-SR-CA-CU-O SYSTEM |
1992-07-01 |
237 |
PHASE IDENTIFICATION AND ELECTRICAL-PROPERTIES IN ZNO-GLASS VARISTORS |
1992-06-01 |
238 |
CHARACTERISTICS OF THE HIGH-TC SUPERCONDUCTING BI-PB-SR-CA-CU OXIDES DERIVED FROM AN ETHYLENEDIAMINETETRAACETIC ACID PRECURSOR |
1992-01-01 |
239 |
INFLUENCE OF COOLING RATE ON ELECTRICAL-PROPERTIES OF ZINC OXIDE-BASED VARISTORS
|
1992-01-01 |
240 |
BOLOMETRIC YBA2CU3O7-X INFRARED DETECTOR
|
1991-09-12 |
241 |
PREPARATION OF FINE-GRAINED BATIO3 |
1991-06-01 |
242 |
EFFECT OF INORGANIC ELECTROLYTES ON THE RHEOLOGICAL PROPERTIES OF THE AQUEOUS YTTRIUM-OXIDE COLLOIDAL ZIRCONIA BINDER SOLS SYSTEM |
1991-04-01 |
243 |
EFFECT OF CA2PBO4 ADDITIONS ON THE FORMATION OF THE 110-K PHASE IN BI-PB-SR-CA-CU-O SUPERCONDUCTING CERAMICS |
1991-02-11 |
244 |
FABRICATION OF HIGH-CURIE-POINT BARIUM-LEAD TITANATE PTCR CERAMICS |
1990-09-01 |
245 |
HUMIDITY-SENSITIVITY CHARACTERISTICS OF CATIO3 POROUS CERAMICS |
1990-08-01 |
246 |
PREPARATION AND PROPERTIES OF GEL-DERIVED HIGH-TC YBA2CU3O7-X SUPERCONDUCTOR |
1990-07-01 |
247 |
ELECTRICAL-PROPERTIES OF TIO2-K2TI6O13 POROUS CERAMIC HUMIDITY SENSOR |
1990-07-01 |
248 |
SYNTHESIS OF HIGH-TC SUPERCONDUCTING BI-PBSR-CA-CU-O CERAMICS PREPARED BY AN ULTRASTRUCTURE PROCESSING VIA THE OXALATE ROUTE |
1990-07-01 |
249 |
FORMATION OF HIGH-TC SUPERCONDUCTING BI-PB-SR-CA-CU OXIDE-FILMS BY SPRAY PYROLYSIS OF AN OXALATE SUSPENSION |
1990-04-01 |
250 |
PREPARATION OF BI0.7PB0.3SR1.0CA1.0CU1.8OY HIGH-TC SUPERCONDUCTOR BY THE CITRATE METHOD
|
1990-04-01 |
251 |
AC ELECTRICAL-PROPERTIES OF HIGH-CURIE-POINT BARIUM LEAD TITANATE PTCR CERAMICS |
1990-02-01 |
252 |
THE EFFECT OF COOLING RATE ON THE POSITIVE TEMPERATURE COEFFICIENT RESISTIVITY CHARACTERISTICS OF LANTHANUM-DOPED BA0.8SR0.2TIO3 CERAMICS |
1989-12-01 |
253 |
ENHANCED DENSIFICATION OF PURE ALUMINA WITH ALUMINA SOL MIXING |
1989-11-01 |
254 |
ZERO RESISTANCE AT 125-K IN BI(PB)-SR-CA-CU-O SUPERCONDUCTOR |
1989-11-01 |
255 |
MICROSTRUCTURE AND PROPERTIES OF NI-ZN FERRITES SINTERED FROM SLIP CAST COLLOIDALLY PRECIPITATED PARTICLES
|
1989-11-01 |
256 |
RHEOLOGICAL PROPERTIES OF THE AQUEOUS ZIRCONIA COLLOIDAL ZIRCONIA BINDER SOL SYSTEM |
1989-08-01 |
257 |
ANALYSIS OF THE DC AND AC PROPERTIES OF K2O-DOPED POROUS BA0.5SR0.5TIO3 CERAMIC HUMIDITY SENSOR |
1989-08-01 |
258 |
PREPARATION OF HOMOGENEOUSLY GRAINED MN-ZN FERRITES |
1989-07-01 |
259 |
PREPARATION OF HIGH-TC SUPERCONDUCTING OXIDE IN THE BI-SR-CA-CU-O SYSTEM BY OXALATE GEL PROCESSING |
1989-07-01 |
260 |
ELECTRICAL-PROPERTIES OF K2O-DOPED BA0.5SR0.5TIO3 CERAMIC HUMIDITY SENSOR
|
1989-06-01 |
261 |
PREPARATION OF FINE-GRAINED NI-ZN FERRITES |
1989-03-01 |
262 |
SYNTHESIS OF HIGH-TC YBA2CU3O7-X SUPERCONDUCTORS AT A LOW ANNEALING TEMPERATURE FROM A GLASS PRECURSOR
|
1989-01-01 |
263 |
HUMIDITY-SENSITIVE ELECTRICAL-PROPERTIES OF BA0.5SR0.5TIO3 POROUS CERAMICS |
1988-07-01 |
264 |
THERMODYNAMIC PROPERTIES OF IRON DOPED BETA''-ALUMINA BY EMF-MEASUREMENTS WITH BETA-ALUMINA ELECTROLYTES |
1988-07-01 |
265 |
THE POSITIVE TEMPERATURE-COEFFICIENT OF RESISTIVITY OF LANTHANUM-DOPED BA0.8SR0.2TIO3 CERAMICS AS A FUNCTION OF BARIUM EXCESS
|
1988-02-01 |
266 |
IRON-DOPED BETA''-ALUMINA COULOMETER |
1988-01-01 |
267 |
IMPROVING THE MICROSTRUCTURE OF ISOTROPIC BARIUM FERRITE OBTAINED VIA THE COLLOIDAL FILTRATION ROUTE |
1987-03-01 |
268 |
PHASE-TRANSFORMATIONS OF GEL-DERIVED MAGNESIA PARTIALLY-STABILIZED ZIRCONIAS |
1987-03-01 |
269 |
VARIOUS ATMOSPHERE EFFECTS ON SINTERING OF COMPACTS OF SIO2 MICROSPHERES |
1986-10-01 |
270 |
SINTERABILITY OF IRON-DOPED BETA''-ALUMINA POWDERS OBTAINED BY GEL-DERIVED AND SOLUTION-DRYING PROCESSES |
1986-04-01 |
271 |
Analysis of an anomalous hump in gate current after dynamic negative bias stress in HfxZr1-xO2/metal gate p-channel metal-oxide-semiconductor field-effect transistors
|
1970-01-01 |