1. 目前位置：
張國明

張國明 Chang, Kow-Ming

電子郵件／E-mail：kmchang@cc.nctu.edu.tw

服務單位／Department：電機學院 ／ 電子工程學系及電子研究所

著作期間／Publish Period：1984 - 2014-10-01

著作統計／Statistics

Article（101）
Others（2）
Patents（8）
Plan（25）
Proceedings Paper（37）
Thesis（185）

Article

序號
No.		 標題
Title		 著作日期
Date
1 High-Mobility InGaZnO TFTs Using Atmospheric Pressure Plasma Jet Technique and 248-nm Excimer Laser Annealing 2014-10-01
2 Multianalyte biosensor based on pH-sensitive ZnO electrolyte-insulator-semiconductor structures
 2014-05-14
3 Investigation of LaAlO3/ZrO2/a-InGaZnO thin-film transistors using atmospheric pressure plasma jet
 2014-04-24
4 Effects of N-2 and O-2 annealing on the multianalyte biosensing characteristics of CeO2-based electrolyte-insulator-semiconductor structures
 2014-04-01
5 Electrical properties of SiGe nanowire following fluorine/nitrogen plasma treatment
 2014-01-15
6 Enhancement of the light-scattering ability of Ga-doped ZnO thin films using SiOx nano-films prepared by atmospheric pressure plasma deposition system
 2013-12-02
7 Effect of ITO electrode with different oxygen contents on the electrical characteristics of HfOx RRAM devices
 2013-09-01
8 Using SiOx nano-films to enhance GZO Thin films properties as front electrodes of a-Si solar cells
 2013-07-01
9 Sensitivity enhancement in SiGe-on-insulator nanowire biosensor fabricated by top surface passivation
 2012-08-01
10 Roles of Amino Acids in the Escherichia coli Octaprenyl Diphosphate Synthase Active Site Probed by Structure-Guided Site-Directed Mutagenesis
 2012-04-24
11 Characteristics of IGZO TFT Prepared by Atmospheric Pressure Plasma Jet Using PE-ALD Al2O3 Gate Dielectric
 2012-04-01
12 Resistive switching characteristics of multilayered (HfO2/Al2O3)(n) n=19 thin film
 2012-02-01
13 Resistance Switching in Ni/HfOx/Ni Nonvolatile Memory Device with CF4/O-2 Plasma Post-treatment
 2012-01-01
14 Transparent conductive indium-doped zinc oxide films prepared by atmospheric pressure plasma jet
 2011-05-31
15 Study of release speeds and bacteria inhibiting capabilities of drug delivery membranes fabricated via electrospinning by observing bacteria growth curves
 2011-03-01
16 Investigation on the abnormal resistive switching induced by ultraviolet light exposure based on HfOx film
 2010-12-01
17 Effect of ultraviolet light exposure on a HfO(x) RRAM device 2010-10-01
18 Geometric Variability of Nanoscale Interconnects and Its Impact on the Time-Dependent Breakdown of Cu/Low-k Dielectrics
 2010-09-01
19 Excellent combination of strength and ductility in an Fe-9Al-28Mn-1.8C alloy
 2010-07-01
20 Development of an Ion Sensitive Field Effect Transistor Based Urea Biosensor with Solid State Reference Systems
 2010-06-01
21 A Novel pH-dependent Drift Improvement Method for Zirconium Dioxide Gated pH-Ion Sensitive Field Effect Transistors
 2010-05-01
22 Development of FET-Type Reference Electrodes for pH-ISFET Applications
 2010-01-01
23 A novel design of a CPW-fed single square-loop antenna for circular polarization
 2008-09-01
24 A novel technique for measuring pico-scale flow rate of a liquid solution using a microchannel
 2008-03-28
25 The First-aid strip of copolymer, produced by electrospinning 2008-01-01
26 The anti-ultraviolet nano-fibers formed during electrospinning 2008-01-01
27 Thermoelastic coupled modeling for a thermal bimorph actuator
 2007-10-01
28 Novel low-temperature polysilicon thin-film transistors with a self-aligned gate and raised source/drain formed by the damascene process
 2007-09-01
29 Effect of channel-width widening on a poly-Si thin-film transistor structure in the linear region
 2007-09-01
30 A novel design of a microstrip-fed shorted square-ring slot antenna for circular polarization
 2007-07-01
31 Characteristics of zirconium oxide gate ion-sensitive field-effect transistors
 2007-07-01
32 Design of low-temperature CMOS-process compatible membrane fabricated with sacrificial aluminum layer for thermally isolated applications
 2007-03-15
33 Mesa etching characterization of InSb for high density image array applications
 2007-01-01
34 A novel four-mask-step low-temperature polysilicon thin-film transistor with self-aligned raised source/drain (SARSD)
 2007-01-01
35 A novel design of a CPW-fed square slot antenna with broadband circular polarization
 2006-12-01
36 Study of a circularly polarized CPW-fed inductive square slot antenna
 2006-08-01
37 Robust ultrathin oxynitride with high nitrogen diffusion barrier near its surface formed by NH3 nitridation of chemical oxide and reoxidation with O-2
 2006-06-01
38 Wet etching characterization of InSb for thermal imaging applications
 2006-03-01
39 Reoxidation behavior of high-nitrogen oxynitride films after O(2) and N(2)O treatment 2005-05-01
40 A simple 2D analytical threshold voltage model for fully depleted short-channel silicon-on-insulator MOSFETs
 2004-12-01
41 A new small-signal MOSFET model and parameter extraction method for RF IC's application
 2004-09-01
42 Highly reliable GaN-based light-emitting diodes formed by p-In0.1Ga0.9N-ITO structure
 2004-08-01
43 High-performance RSD poly-Si TFTs with a new ONO gate dielectric
 2004-06-01
44 Performance and reliability of low-temperature polysilicon TFT with a novel stack gate dielectric and stack optimization using PECVD nitrous oxide plasma
 2004-01-01
45 The changing effect of N-2/O-2 gas flow rate ratios on ultrathin nitrogen-enriched oxynitride gate dielectrics
 2004-01-01
46 1.0 nm oxynitride dielectrics prepared by RTP in mixtures of N-2 and O-2 ambient 2004-01-01
47 Low-temperature poly-Si thin-film transistor with a N2O-plasma ONO multilayer gate dielectric 2004-01-01
48 An alternative process for silicon nanowire fabrication with SPL and wet etching system
 2004-01-01
49 Electrical characteristics of low temperature polysilicon TFT with a novel TEOS/oxynitride stack gate dielectric
 2003-08-01
50 A new BlueRing scatternet topology for Bluetooth with its formation, routing, and maintenance protocols
 2003-06-01
51 EEG alpha blocking correlated with perception of inner light during Zen meditation 2003-01-01
52 Electrical properties of SiN/GaN MIS diodes formed by ECR-CVD
 2002-09-01
53 The variation of ohmic contacts and surface characteristics on p-GaN induced by reactive ion etching
 2002-07-01
54 Anomalous variations of OFF-state leakage current in poly-Si TFT under static stress
 2002-05-01
55 Hot carrier induced degradation in the low temperature processed polycrystalline silicon thin film transistors using the dynamic stress
 2002-04-01
56 Characterization of the novel polysilicon TFT with a subgate coupling structure
 2002-04-01
57 Using NH3 plasma pretreatment to improve the characteristics of organic spin-on low-k materials for copper metallization
 2001-11-01
58 Enhanced degradation in polycrystalline silicon thin-film transistors under dynamic hot-carrier stress
 2001-10-01
59 Thickness and stress polarity effects on the reliability of the low thermal budget polyoixdes
 2001-10-01
60 A novel high-performance poly-silicon thin film transistor with a self-aligned thicker sub-gate oxide near the drain/source regions
 2001-10-01
61 A method to characterize n(+)-polysilicon/oxide interface traps in ultrathin oxides 2001-06-01
62 The effect of the growth temperature on polyoxide by rapid thermal processing
 2001-03-01
63 A novel process and thermodynamic mechanisms of air gap formation for ULSI application
 2000-11-01
64 Reactive ion pretreatment technique to improve the ashing resistance of low dielectric constant high carbon content polymer
 2000-07-01
65 A novel pretreatment technology for organic low-dielectric material to suppress copper diffusion and improve ashing resistance
 2000-06-01
66 Using NH3 plasma treatment to improve the characteristics of hydrogen silsesquioxane for copper interconnection application
 2000-05-01
67 Influence of sheet resistance on N2O-grown polyoxide
 2000-04-01
68 Electrical characteristics of polyoxide prepared by N-2 preannealing 2000-01-01
69 Suppression of copper diffusion through barrier metal-free hydrogen silsesquioxane dielectrics by NH3 plasma treatment 1999-12-01
70 Comparison of the characteristics of polyoxides grown by thermal, rapid thermal oxidation, and tetraethylorthosilicate deposition methods
 1999-10-01
71 Suppression of fluorine penetration by use of in situ stacked chemical vapor deposited tungsten film
 1999-08-01
72 Barrier characteristics of chemical vapor deposited amorphous-like tungsten silicide with in situ nitrogen plasma treatment
 1999-07-01
73 A novel technology to form air gap for ULSI application
 1999-04-01
74 Thermal stability of amorphous-like WNx/W bilayered diffusion barrier for chemical vapor deposited-tungsten/p(+)-Si contact system
 1999-03-01
75 Three electrodes touch-mode capacitive pressure sensor
 1998-12-01
76 Characteristics of N2O-grown polyoxide by the recrystallized-polysilicon method 1998-12-01
77 The characteristics of chemical vapor deposited amorphous-like tungsten film as a gate electrode
 1998-09-01
78 The relaxation phenomena of positive charges in thin gate oxide during Fowler-Nordheim tunneling stress
 1998-08-01
79 A new simple and reliable method to form a textured Si surface for the fabrication of a tunnel oxide film
 1998-05-01
80 Low-frequency noise characteristics of hot carrier-stressed buried-channel pMOSFETs
 1998-03-01
81 Amorphouslike chemical vapor deposited tungsten diffusion barrier for copper metallization and effects of nitrogen addition 1997-08-01
82 Effect of adding Ar on the thermal stability of chemical vapor deposited fluorinated silicon oxide using an indirect fluorinating precursor
 1997-05-12
83 Leakage performance and breakdown mechanism of silicon-rich oxide and fluorinated oxide prepared by electron cyclotron resonance chemical vapor deposition
 1997-05-01
84 Nitridation of fine grain chemical vapor deposited tungsten film as diffusion barrier for aluminum metallization 1997-04-15
85 Suppression of fluorine impurity in blanket chemical vapor deposited tungsten film for via fills with a novel two-step deposition technique
 1997-04-01
86 SiH4-WF6 gas-phase nucleated tungsten as an adhesion layer in blanket chemical vapor deposition for ultralarge scale integration
 1997-03-01
87 Characteristics of selective chemical vapor deposition of tungsten on aluminum with a vapor phase precleaning technology
 1997-01-01
88 The influence of precleaning process on the gate oxide film fabricated by electron cyclotron resonance plasma oxidation
 1997-01-01
89 Highly selective etching for polysilicon and etch-induced damage to gate oxide with halogen-bearing electron-cyclotron-resonance plasma 1996-09-01
90 Influences of damage and contamination from reactive ion etching on selective tungsten deposition in a low-pressure chemical-vapor-deposition reactor 1996-09-01
91 Influences of deposition temperature on thermal stability and moisture resistance of chemical vapor deposited fluorinated silicon oxide by using indirect fluorinating precursor
 1996-08-26
92 Dry etching of polysilicon with high selectivity using a chlorine-based plasma in an ECR reactor
 1996-07-01
93 Effects of gas ratio on electrical properties of electron-cyclotron-resonance nitride films grown at room temperature 1996-06-01
94 STRUCTURAL EFFECT ON BAND-TRAP-BAND TUNNELING INDUCED DRAIN LEAKAGE IN N-MOSFETS
 1995-12-01
95 A FIBEROPTIC REFLECTIVE DISPLACEMENT MICROMETER
 1995-06-01
96 ACTIVITY-COEFFICIENTS OF ELECTRONS AND HOLES IN DEGENERATE SEMICONDUCTORS WITH NONUNIFORM COMPOSITION
 1994-03-01
97 NEW PHYSICAL FORMULATION OF THE THERMIONIC EMISSION CURRENT AT THE HETEROJUNCTION INTERFACE
 1993-07-01
98 2 NEW GENERALIZED EQUATIONS FOR MINORITY-CARRIER TRANSPORT IN BIPOLAR-TRANSISTORS WITH HEAVILY DOPED BASE AND NONUNIFORM BAND-STRUCTURE
 1992-06-01
99 BAND DISCONTINUITIES - A SIMPLE ELECTROCHEMICAL APPROACH
 1990-04-01
100 ACTIVITY-COEFFICIENTS OF ELECTRONS AND HOLES IN SEMICONDUCTORS WITH NONUNIFORM COMPOSITION .1. NONDEGENERATE
 1988-11-01
101 A CONSISTENT MODEL FOR CARRIER TRANSPORT IN HEAVILY DOPED SEMICONDUCTOR-DEVICES
 1988-08-01

Others

序號
No.		 標題
Title		 著作日期
Date
1 Field Dependence of Porous Low-k Dielectric Breakdown as Revealed by the Effects of Line Edge Roughness on Failure Distributions
 2011-03-01
2 A CONSISTENT MODEL FOR SEMICONDUCTOR HETEROJUNCTIONS IN EQUILIBRIUM 1989-06-01

Patents

序號
No.		 標題
Title		 著作日期
Date
1 堆疊式源／汲極與薄通道之複晶矽薄膜電晶體之製作方法
 2009-11-01
2 以半導體製程形成輻射熱測定儀元件的結構及方法
 2008-09-16
3 堆疊式源／汲極與薄通道之複晶矽薄膜電晶體結構，及其製作方法
 2007-07-16
4 Staggered source/drain and thin-channel TFT structure and fabrication method thereof
 2007-07-12
5 以快速升溫方式成長之氧化層
 2006-05-01
6 以快速升溫方式成長之氧化層
 2005-07-11
7 Manufacturing method of thin film transistor
 2005-01-13
8 薄膜電晶體結構及其製造方法
 2003-06-21

Plan

序號
No.		 標題
Title		 著作日期
Date
1 下世代平面顯示器高性能銦鎵鋅氧化物薄膜電晶體之設計、成長、製作與特性分析(III) 2014
2 下世代平面顯示器高性能銦鎵鋅氧化物薄膜電晶體之設計、成長、製作與特性分析(II) 2013
3 下世代平面顯示器高性能銦鎵鋅氧化物薄膜電晶體之設計、成長、製作與特性分析(I) 2012
4 非均質矽鍺奈米線在高靈敏度生物感測器之新穎應用
 2011
5 非均質矽鍺奈米線在高靈敏度生物感測器之新穎應用
 2010
6 非均質矽鍺奈米線在高靈敏度生物感測器之新穎應用
 2009
7 高品質高敏感度之矽鍺奈米感測元件平台之開發 2008
8 開發具備新型堆疊式閘極氧化層與自動對準增高式源/汲極結構之高效能低溫複晶矽薄膜電晶體(III) 2006
9 開發具備新型堆疊式閘極氧化層與自動對準增高式源/汲極結構之高效能低溫複晶矽薄膜電晶體(II) 2005
10 開發具備新型堆疊式閘極氧化層與自動對準增高式源/汲極結構之高效能低溫複晶矽薄膜電晶體(I) 2004
11 新型低溫多晶矽薄膜電晶體結構設計及其製作方法與可靠性研究(I) 2003
12 以電子迴旋共振化學氣相沈積技術成長超薄閘極絕緣膜及可靠性之研究(III)
 2002
13 電子迴旋共振他學氣相沈積系統之晶片座設計研發與製作 2002
14 以電子迴旋共振化學氣相沈積技術成長超薄閘極絕緣膜及可靠性之研究(II) 2001
15 金屬線及空氣低介電常數介電質前瞻性積體技術開發(II)
 2001
16 以電子迴旋共振化學氣相沈積技術成長超薄閘極絕緣膜及可靠性之研究(I) 2000
17 金屬線及空氣低介電常數介電質前瞻性積體技術開發(I) 2000
18 極大型積體電路元件相關耐火金屬化物及電介質技術
 1999
19 極大型積體電路元件相關耐火金屬化物及電介質技術 1996
20 微機電系統校際整合研究---子計畫一：電容性微感器及微控器元件結構設計與製造 1996
21 微機電系統校際整合研究---總計畫 1996
22 微小機電元件與系統之研究---總計畫 1995
23 金屬及金屬矽化物技術 1995
24 微小機電元件與系統之研究---子計畫一：電容性微感器及微控器元件結構設計與製造 1995
25 金屬及金屬矽化物技術(II) 1994

Proceedings Paper

序號
No.		 標題
Title		 著作日期
Date
1 Cu(In,Ga)Se-2 thin films preparation from CuGa-In metallic alloy and Se thin film by atmosphere pressure plasma deposition system
 2012-01-01
2 Structural and optoelectronic properties of GZO/SiOx bilayer films by atmosphere pressure plasma jet
 2012-01-01
3 Improvement on Interface Quality and Reliability Properties of HfAlOx MIS Capacitor with Dual Plasma Treatment
 2012-01-01
4 Investigation of the effect of different oxygen partial pressure to LaAlO3 thin film properties and resistive switching characteristics
 2011-12-01
5 Bipolar resistive switching effect in Gd(2)O(3) films for transparent memory application 2011-07-01
6 Improvement on Electrical Characteristics of HfO2 MIS Capacitor with Dual Plasma Treatment
 2011-01-01
7 Performance improvement of pentacene-based organic thin-film transistor with HfO2 gate dielectrics treated by CF4 plasma
 2011-01-01
8 Reliability Properties and Current Conduction Mechanisms of HfO2 MIS Capacitor with Dual Plasma Treatment
 2011-01-01
9 The Effect of Different Carrier Gases and Channel Thicknesses on the Characteristics of ZnO TFTs Prepared by Atmospheric Pressure Plasma Jet
 2011-01-01
10 ANNEALING TEMPERATURE EFFECT ON THE SENSITIVITY OF SIGE NANOWIRE FOR BIO-SENSOR 2011-01-01
11 Bipolar resistive switching characteristics of Gd2O3 thin film structure
 2011-01-01
12 The effect of plasma deposition on the electrical characteristics of Pt/HfO(x)/TiN RRAM device 2010-12-25
13 The resistive switching characteristics of a Ti/Gd(2)O(3)/Pt RRAM device 2010-05-01
14 Modulation of the Electrical Characteristics of HfOx/TiN RRAM Devices through the Top Electrode Metal
 2010-01-01
15 Flow Rate's Influence on Low Temperature Silicon Oxide Deposited by Atmospheric Pressure Plasma Jet for Organic Thin Film Transistor Application
 2010-01-01
16 The Improvement Effect of the Plasma Nitridation Process to the Reliability of HfO(2) thin films 2009-01-01
17 The effects of plasma treatment on the thermal stability of HfO(2) thin films
 2008-07-30
18 Characterization of the low temperature dopant activation behavior at NiSi/silicon interface formed by implant into silicide method
 2008-07-30
19 Characterization of the low temperature activated N(+)/P junction formed by implant into silicide method
 2008-07-30
20 A novel process for forming an ultra-thin oxynitride film with high nitrogen topping
 2008-02-01
21 Higher Drive Current for SiGe Nanowires 2008-01-01
22 The Ge Enhance the Sensitivity for Bio-Sensor 2008-01-01
23 The effects of plasma treatment on the thermal stability of HfAlOx thin films 2007-01-01
24 Characterization of the low temperature activated P+/N junction formed by implant into silicide method 2007-01-01
25 Brightness enhancement of ITO/GaN LEDs by self-aligned micro-net structures
 2005-01-01
26 An investigation of inner light during Zen meditation using alpha-suppressed EEG and VEP 2005-01-01
27 A new fabrication technique for silicon nanowires
 2004-06-01
28 Electrical and reliability characteristics of 1nm ultrathin oxynitride gate dielectric prepared by RTP 2003-01-01
29 Single-electron transistor structures based on silicon-on-insulator silicon nanowire fabrication by scanning probe lithography and wet etching
 2002-11-01
30 Single-crystal silicon nanostructure fabrication by scanning probe lithography and anisotropic wet etching
 2001-01-01
31 Suppress copper diffusion through barrier metal-free hydrogen silisequioxane dielectrics by using NH3 plasma treatment 2000-01-01
32 Fabrication of cantilever type microswitches using surface micromachining technology 2000-01-01
33 A pretreatment technique to improvement the ashing resistance of low k spin-on-polymer (SOP) 1999-01-01
34 Comprehensive study of plasma pretreatment process for thin gate oxide (<10 nm) fabricated by electron cyclotron resonance plasma oxidation
 1996-12-01
35 Reduction of selectivity loss probability on dielectric surface during chemical vapor deposition of tungsten using fluorinated oxide and removing silanol units on dielectric surface
 1996-12-01
36 Reactive ion etching of compound semiconductors grown by MOCVD technique with BCl3/SF6/Ar mixtures 1995-01-01
37 A SIMPLE AND EFFICIENT PRETREATMENT TECHNOLOGY FOR SELECTIVE TUNGSTEN DEPOSITION IN LOW-PRESSURE CHEMICAL-VAPOR-DEPOSITION REACTOR
 1994-12-01

Thesis

序號
No.		 標題
Title		 著作日期
Date
1 使用具粗糙表面結構的氧化鋅摻鎵薄膜作為 矽薄膜太陽能電池前電極之研究 2013
2 應用雙層高介電質材料氧化鋯/氧化鋁鑭於製備大氣 噴射式電漿沉積氧化銦鎵鋅薄膜電晶體之特性研究 2013
3 雙層結構硒膜應用於銅銦鎵硒吸收層之兩階段硒化研究 2013
4 利用大氣壓電漿輔助化學氣相沉積製備不同比例之銦鎵鋅氧薄膜電晶體與雷射退火處理之電性研究 2013
5 具高靈敏度生物感測之矽锗奈米線於電漿處理技術應用之特性研究 2013
6 利用鈍化層與雷射退火改善由大氣電漿輔助化學氣相沉積製備氧化鉿/氧化鋁/銦鎵鋅氧薄膜電晶體之電性研究 2013
7 氫還原暨硫化對硒化銅銦鎵太陽能電池的影響 2013
8 用混合氮氧氣體及電漿氟化與氮化處理技術對矽鍺奈米線於生物感測試劑之靈敏度研究與特性 2013
9 鐵-9wt.%鋁-28wt.%錳-1.8wt.%碳合金顯微結構、機械性質及抗腐蝕性質研究
 2013
10 氮電漿處理高介電係數介電質二氧化鋯應用於大氣壓電漿輔助化學氣相沉積製備銦鎵鋅氧薄膜電晶體之研究 2013
11 研究雙重電漿改良之高靈敏度矽鍺奈米線生物感測元件 2013
12 利用含硫酸性溶液作銅銦鎵硒吸收層表面鈍化之研究 2013
13 氫、氧與硫對銅銦鎵硒薄膜太陽能電池效能之影響以及AMPS-1D之元件模擬 2013
14 使用ISPP 量測方法研究改善NAND快閃記憶體可靠度問題 2013
15 利用大氣常壓電漿輔助化學氣相沉積製備氧化鋅系透明電極與氧化鋅/銦鎵鋅氧薄膜電晶體應用之特性研究
 2012
16 雙重電漿處理技術應用於具高介電常數閘極絕緣層的金屬-絕緣層-半導體電容及低溫多晶矽薄膜電晶體之特性研究 2012
17 四氟化碳及氨之雙重電漿處理於氧化鉿金屬-絕緣層-半導體薄膜電晶體電特性之改善研究 2012
18 使用於佈局相依效應之佈局萃取器實現 2012
19 高效率交流發光二極體於SPICE之模擬分析 2011
20 高靈敏度之堆疊式結構矽鍺奈米線於不同氧化條件下之氧化特性研究
 2011
21 利用四氟化碳及氮之雙重電漿處理於氧化鉿鋁金屬-絕緣體-半導體電容之研究 2011
22 應用多層次結構製作之矽鍺奈米線於生物感測元件上之靈敏度研究
 2011
23 熱退火處理對於大氣電漿沉積銦鎵鋅氧化物薄膜電晶體之特性影響
 2011
24 利用大氣電漿技術沉積不同結晶性硒薄膜於堆疊金屬前驅層之硒化製程研究 2011
25 利用四氟化碳電漿處理於多晶矽及氮電漿處理於二氧化鉿閘極介電層之低溫多晶矽薄膜電晶體之研究 2011
26 低介電係數材料應用於銅導線內連接製程之可靠度研究 2010
27 電阻式記憶體之特性研究及電性探討
 2010
28 利用大氣電漿對有機半導體之介電層表面做改質研究
 2010
29 雙重電漿處理下二氧化鉿金屬-絕緣層-半導體電容器的電流傳導機制以及可靠度之研究 2010
30 多層堆疊氧化鉿/氧化鋁電阻轉態層之透明電阻式記憶體特性研究
 2010
31 雙重電漿處理對二氧化鉿金屬-絕緣層-半導體結構電特性之改善研究
 2010
32 利用堆疊式結構提升非均質矽鍺奈米線靈敏度之研究
 2010
33 利用大氣電漿沉積以氧化鋅為主的透明導電膜其光電特性和熱穩定性的研究
 2010
34 藉由大氣電漿沉積主動層之氧化鋅薄膜電晶體之研究 2010
35 以Alignment mark的選擇作為改善黃光製程上的OVL budget之研究
 2010
36 藉由大氣電漿在不同狀態下沉積氧化鋅摻雜鎵薄膜其光電特性與材料分析之研究
 2010
37 不同表面處理對二氧化鉿與二氧化鋯推疊式高介電常數材料薄膜之效果 2010
38 電感耦合電漿氮化製程與氟化製程對鉿系高介電常數材料薄膜之效果 2009
39 以噴射式大氣電漿在低溫下開發高品質二氧化矽應用在低電壓操作之有機薄膜電晶體之研究
 2009
40 以離子場效電晶體為基礎之微型酵素型生物感測器及其參考系統開發
 2009
41 鎳/氧化鉿/氮化鈦結構的電阻式記憶體及其熱處理效應
 2009
42 以pH-ISFET元件為基礎之尿素感測器之製造與研究
 2009
43 二氧化鋯作為閘極之離子感測場效電晶體應用在pH量測之最佳化退火製程研究
 2009
44 以二氧化鋯為感測層之離子場效電晶體其離子偵測與干擾之特性研究
 2009
45 應用非均勻矽鍺奈米線在生物感測器上提升其靈敏度
 2009
46 電感耦合式電漿氮化和氟化製程對鉿系介電質薄膜之影響
 2009
47 電感耦合式電漿氮化和氟化處理對鉿矽化合物薄膜之影響
 2009
48 以ZrO2和聚合物做為ISFET/REFET之感測材料應用於讀出電路設計之特性與考量研究
 2009
49 二氧化鉿經四氟化碳電漿處理後應用於有機薄膜電晶體之研究
 2009
50 表面處理及上電極金屬對有機場效應電晶體之漏電流分析
 2009
51 低溫下利用大氣電漿沉積二氧化矽薄膜作為有機薄膜電晶體之閘極絕緣層在不同基本製程參數之研究
 2009
52 利用陽極電極的調變來改善氧化鉿薄膜之電阻式轉換記憶體其單極操作特性研究
 2009
53 脈衝雷射沉積鑭鋁氧電阻層全透式電阻式記憶體研究
 2009
54 使用金屬閘極的鉿類介電層結構之研究 2008
55 大氣電漿技術對有機薄膜電晶體特性改善之研究
 2008
56 小型化寬頻帶印刷槽孔天線
 2008
57 電漿處理氧化鋁鉿閘極介電層之研究
 2007
58 在有機薄膜電晶體低溫製程下利用常壓式電漿技術沉積閘極二氧化矽
 2007
59 以離子植入矽化物技術製作在矽化鎳與矽介面處低溫摻雜活化的相關研究
 2007
60 以Polyimide高分子材料和NafionTM作為REFET感測層之研究
 2007
61 常壓式電漿系統沈積之二氧化矽在有機薄膜電晶體應用上之研究
 2007
62 以Polyimide高分子材料/NafionTM質子交換膜為結構作為pH-ISFET之微小化固態電極之研究
 2007
63 以離子植入矽化物技術製作在矽化鎳與矽介面間形成陡峭接面之熱穩定度相關研究
 2007
64 非均質矽鍺奈米線在高靈敏度生物感測器之新穎應用
 2007
65 高敏感度之矽鍺奈米生醫感測之研究與應用
 2007
66 離子感測場效電晶體對於溫度及閘極電壓應力調變之可靠度研究
 2007
67 藉由離子佈植進入矽合金法在低溫活化下形成的接面研究
 2007
68 常壓式電漿系統對有機薄膜電晶體表面之研究 2007
69 高性能離子感應電晶體之可靠度研究及應用
 2007
70 沉積後電漿處理對鉿類高介電常數材料熱穩定性之影響
 2007
71 具備新穎自我對準升高式源/汲極結構之低溫複晶矽薄膜電晶體元件之開發與寬通道效應之研究
 2007
72 寬通道側向電流效應之研究與新穎薄膜電晶體結構之開發
 2006
73 高含氮量的極薄含氮氧化層的再氧化行為以及高氮靠近含氮氧化層表面之介電層技術開發 2006
74 室溫紅外線偵檢器與圓形極化天線在無線微感測器應用上的設計,製作與模擬分析
 2006
75 Ta2O5 閘極介電層特性及尺寸效應所造成的MIS 電容邊際漏電流 2006
76 高功率元件-CoolMOS 的元件模擬與電性研究
 2006
77 形成矽化鎳時在矽化鎳與矽接面處離子活化相關研究
 2006
78 沉積後電漿處理對二氧化鉿金氧半導體結構電特性之影響
 2006
79 The electrical simulation of lateral super-junction power devices 2006
80 鍺對奈米線pH-靈敏度的影響
 2006
81 以NafionTM/高分子材料為結構的感測層應用在pH-ISFET離子選擇場效電晶體之研究
 2006
82 二氧化鋯感測層在N型及P型pH-離子感測場效電晶體上之研究與比較
 2006
83 形成矽化鎳時在矽化鎳與矽接面處離子活化相關研究
 2006
84 銦錫氧化物電極與表面結構改進新穎氮化鎵發光元件
 2006
85 影像式紅外線偵檢像素縮小化製程開發
 2005
86 臨場共製之REFET與ISFET對於感測氧化層厚度調變的飄移特性之研究
 2005
87 具有較厚源/汲極與較寬通道的多晶矽薄膜電晶體的模擬與電性分析
 2005
88 天線效應於0.13微米快閃記憶體所造成的損害及如何避免和良率提升之研究
 2005
89 矽鍺奈米線在不同製程條件下之電特性研究
 2005
90 矽鍺薄膜在不同氧化條件下之電性研究
 2005
91 以電漿表面處理之新穎ReFET製程
 2005
92 矽鍺奈米線的製作和電性探討
 2005
93 利用化學機械研磨技術製作新穎多晶矽薄膜電晶體結構及其電性模擬
 2005
94 新穎低溫多晶矽薄膜電晶體之製程與□定度分析
 2004
95 透過光電化學蝕刻方式進行表面粗化以增加發光二極體之亮度
 2004
96 離子感測電晶體與參照電晶體之感測層材料研究 2004
97 氧化銦錫擴散電流層厚度對氮化鎵發光二極體光電特性的影響
 2004
98 具有加厚源/汲極與薄通道之新穎低溫複晶矽薄膜電晶體之製作與特性研究
 2004
99 薄膜電晶體磁場感測器之研究
 2004
100 使用表面微機電技術且CMOS相容的低溫製程下製作紅外線熱感應器 2004
101 超薄二氧化鉿閘極絕緣層之特性研究
 2004
102 利用臨場共製的ReFET與ISFET來改善飄移特性之研究
 2004
103 完全空乏型單晶矽在絕緣層上之短通道金氧半場效電晶體的二維分析及新解析模式
 2004
104 多種互補式金氧半場效電晶體製造相容之感測層材料在酸鹼離子感測器之研究
 2004
105 集極相關製程及結構對於0.18微米世代之矽鍺異質接面雙極性電晶體直流及射頻效能影響的物理機制分析以及銅製程相容低介電常數材質之電性強化技術開發
 2003
106 利用多層感測層改善酸鹼離子感測器
 2003
107 具有副閘極結構之雷射退火複晶矽薄膜電晶體製作與特性研究
 2003
108 具有超薄非晶矽層之高效能雷射退火複晶矽薄膜電晶體之製作與特性研究
 2003
109 矽質奈米級電子元件的研究
 2003
110 高功率碳化矽金氧半場效電晶體之元件結構與應用之探討
 2003
111 以感應耦合式電漿系統成長之超薄氮氧化矽薄膜的電特性與可靠度研究
 2003
112 在高電漿密度蝕刻機中SF6電漿分解產物對產品的影響與研究
 2003
113 使用電子迴旋共振電漿處理技術於表面蝕刻之特性研究及開發氮化鎵的閘極介電與鈍化絕緣薄膜之應用 2002
114 超薄五氧化二鉭閘極介電層之特性研究 2002
115 具備新穎ONO堆疊式閘極介電層之高效能低溫複晶矽薄膜電晶體製作與特性研究 2002
116 矽奈米線的新穎製程研究 2002
117 整合微流管及溶液電導度量測奈升流體系統 2002
118 以快速升溫氧化技術成長 1.0 nm 高品質氮氧化矽閘極絕緣層及其特性研究 2002
119 新穎浮動副閘極結構之複晶矽薄膜電晶體 2001
120 氮化鎵金氧半場效電晶體之製程及特性研究 2001
121 利用微機電技術設計與製造微波開關元件 2001
122 堆疊式閘極介電層結構之低溫多晶矽薄膜電晶體特性之研究 2001
123 低溫多晶矽薄膜電晶體之衰退機制分析以及新穎高性能元件結構之開發 2001
124 半導體後段製程誘發之高阻抗研究 2001
125 高品質多晶矽氧化層最佳成長條件之探討 2000
126 電子迴旋共振乾式蝕刻技術對金屬P型氮化鎵介面特性的影響 2000
127 複晶矽薄膜電晶體之可靠性研究 2000
128 以化學性氧化層加化學氣相沈積氮化處理所成長之極薄閘極氮氧化層特性之研究 2000
129 離子佈植對低介電常數材料之特性影響與在銅連線上之應用 2000
130 使用氮化處理技術改進低壓化學氣相沉積鎢及低介電常數材料作為極大型積體電路金屬接觸擴散障礙層之特性研究 1999
131 低溫複晶矽薄膜電晶體製程及特性之研究 1999
132 積體電路晶片在封裝前利用鎢探針量測系統及相關製程技術 1999
133 以空氣作為介電質在超大型積體電路上的應用 1999
134 紅外線感測器之低溫製成研究 1999
135 利用NH3電漿處理來改善低介電常數材料HSQ在銅連線上的應用 1998
136 快速熱退火及複晶矽處理對複晶矽介電質之影響 1998
137 紅外線感測器之低溫製程研究 1998
138 熱制動微閥與微流量感測器之研究 1998
139 Using N2+ Implantation into Poly-Si/a-Si Films to Improve the Thermal Stability of Cobalt Silicide 1998
140 三電極矽電容式壓力感測器及光纖反射式測微器 1997
141 土壤混合水泥工程性質之研究 1997
142 矽-旋轉式塗佈玻璃-矽的陽極鍵結技術在微機電系統上的應用 1997
143 低壓化學氣相沉積鎢膜在極大型積體電路上之運用 1996
144 利用矽烷,氧氣及四氟化碳在電子迴旋共振系統中沉積之低介電常數氟氧化矽的研究 1996
145 電子迴旋共振電漿氧化成長閘極氧化層之應用及二氧化矽層的特性探討 1996
146 NH3及N2O對介電質的影響 1996
147 應用在低介電常數金屬層間介電質的旋轉式塗佈HSQ之特性研究 1996
148 矽薄膜式電熱制動微閥 1996
149 以有紋路之矽表面成長穿隧氧化層於電子可擦拭儲存可程式化唯讀記憶體之研究 1996
150 異質接面雙極電晶體的新一致性傳輸方程式研究及相關製程技術的探討 1996
151 用電子迴旋共振化學氣相沈積技術以矽烷，氧及四氟化碳成長低介電常數氟氧化矽層之研討 1995
152 以氮化鎢做為擴散障礙層之研究 1995
153 以電子迴旋共振化學氣相沈積技術成長矽氧膜和矽氧氮膜之研究 1995
154 新型反-T狀井結構深次微米金氧半電晶體分析與模擬研究 1995
155 COMPREHENSIVE STUDY OF LOW-TEMPERATURE SILICON DIOXIDE FABRICATED BY ELECTRON-CYCLOTRON-RESONANCE（ECR） PLASMA OXIDATION WITH AND WITHOUT ECR PLASMA PRETREATMENT 1995
156 電子迴旋共振化學氣相沉積之氧化矽膜及鎢在六氟化硫,氟化氮與氮氣的電漿蝕刻 1994
157 深次微米金氧半場效電晶體製程技術之穿透現象分析與模擬 1994
158 以含鹵素元素氣體之子迴旋共振電漿進行複晶矽的蝕刻技術 1994
159 深次微米 CMOS 製程技術以避免電栓鎖定之分析與模擬 1994
160 電容式壓力感測器 1994
161 砷化鎵、磷化銦及磷化銦鎵在三氯化硼、六氟化硫與氬氣中的活性離子蝕刻 1993
162 磷化銦及磷化銦鎵的甲烷與氫氣活性離子蝕刻 1992
163 電漿化學氣相沉積法成長氮氧化矽在III-V化合物半導體之性質研究 1992
164 Reactive ion etching of InP and InGaP using CH□/H□mixtures 1992
165 III-V化合物半導體活性離子蝕刻製程 1991
166 溶膠-凝膠法的硫化鎘微晶玻璃製作 1991
167 砷化鋁鎵/砷化鎵異質接面雙極性電晶體的二維數值模擬 1991
168 一致性二維數值模擬砷化鎵場效電晶體高濃度雜質攙入效應 1991
169 電漿化學氣相沈積法成長氮化矽在III-V化合物半導體上之性質研究 1991
170 III-V異質接面元件電容電壓剖面模擬與分析 1991
171 波長1.3微米磷砷化鎵銦/磷化銦半導體雷射之成長 1991
172 以分子束磊晶成長鍺矽晶膜之特性分析 1989
173 二維高濃度砷化鎵金半場效電晶體模擬 1988
174 二維電子雲場效電晶體的分析與模擬 1988
175 砷化鋁鎵/ 砷化鎵異質介面電晶體的數值研究 1988
176 砷化鋸鎵/ 砷化鎵異質介面元件高摻雜質效應的二維數值模擬 1988
177 砷化鎵/ 砷化鋁雙異質接面雷射陣列 1988
178 液相磊晶磷化銦鎵薄膜及其特性 1988
179 異質結構元件電容電壓剖面模擬 1988
180 砷化鋁鎵/ 砷化鎵異質介面電晶體的數值研究 1988
181 砷化鎵金屬半場效電晶體二維數值分析 1987
182 氧化鋯基陶瓷殼模的製備 1987
183 電化電解池方法於砷化鎵、砷化銦與砷化鎵銦液相溶液之熱力學性質之研究 1987
184 電化電解池方法於砷化鎵、砷化金因與砷化鎵金因液相溶液之熱力學性質之研究 1987
185 高/低摻雜濃度矽晶於N2O氣體的熱氧化及其元件應用 1984
電機學院