1. 目前位置：
陳明哲

陳明哲 Chen, Ming-Jer

電子郵件／E-mail：mjcheng@cc.nctu.edu.tw

服務單位／Department：電機學院 ／ 電子工程學系及電子研究所

著作期間／Publish Period：1979 - 2014-07-01

著作統計／Statistics

Article（90）
Others（3）
Patents（4）
Plan（34）
Proceedings Paper（9）
Thesis（161）

Article

序號
No.		 標題
Title		 著作日期
Date
1 A Statistical Model for the Headed and Tail Distributions of Random Telegraph Signal Magnitudes in Nanoscale MOSFETs
 2014-07-01
2 Plasmons-Enhanced Minority-Carrier Injection as a Measure of Potential Fluctuations in Heavily Doped Silicon
 2014-07-01
3 Effects of the Multiple Solutions and Question Prompts on Generalization and Justification for Non-Routine Mathematical Problem Solving in a Computer Game Context 2014-04-01
4 THE IMPACTS OF VIRTUAL MANIPULATIVES AND PRIOR KNOWLEDGE ON GEOMETRY LEARNING PERFORMANCE IN JUNIOR HIGH SCHOOL
 2014-01-01
5 Probing Long-Range Coulomb Interactions in Nanoscale MOSFETs
 2013-12-01
6 Effect of Strained k . p Deformation Potentials on Hole Inversion-Layer Mobility
 2013-04-01
7 Error-Free Matthiessen's Rule in the MOSFET Universal Mobility Region
 2013-02-01
8 Evidence for the Fourfold-Valley Confinement Electron Piezo-Effective-Mass Coefficient in Inversion Layers of < 110 > Uniaxial-Tensile-Strained (001) nMOSFETs
 2012-06-01
9 Temperature-Oriented Mobility Measurement and Simulation to Assess Surface Roughness in Ultrathin-Gate-Oxide (similar to 1 nm) nMOSFETs and Its TEM Evidence
 2012-04-01
10 Evidence for a Very Small Tunneling Effective Mass (0.03m(0)) in MOSFET High-k (HfSiON) Gate Dielectrics
 2012-04-01
11 Temperature-Dependent Remote-Coulomb-Limited Electron Mobility in n(+)-Polysilicon Ultrathin Gate Oxide nMOSFETs
 2011-04-01
12 Hole Effective Masses as a Booster of Self-Consistent Six-Band k . p Simulation in Inversion Layers of pMOSFETs
 2011-04-01
13 A Method of Extracting Metal-Gate High-k Material Parameters Featuring Electron Gate Tunneling Current Transition
 2011-04-01
14 Gate Direct Tunneling Current in Uniaxially Compressive Strained nMOSFETs: A Sensitive Measure of Electron Piezo Effective Mass
 2011-01-01
15 An Extreme Surface Proximity Push for Embedded SiGe in pMOSFETs Featuring Self-Aligned Silicon Reflow
 2010-09-01
16 A Novel Method of MOSFET Series Resistance Extraction Featuring Constant Mobility Criteria and Mobility Universality
 2010-04-01
17 Direct backward third-harmonic generation in nanostructures
 2010-03-29
18 Enhanced Hole Gate Direct Tunneling Current in Process-Induced Uniaxial Compressive Stress p-MOSFETs
 2009-08-01
19 Intercrossed Sheet-Like Ga-Doped ZnS Nanostructures with Superb Photocatalytic Actvitiy and Photoresponse
 2009-07-23
20 Distinguishing Between STI Stress and Delta Width in Gate Direct Tunneling Current of Narrow n-MOSFETs
 2009-05-01
21 On the Mean Free Path for Backscattering in k(B)T Layer of Bulk Nano-MOSFETs
 2008-12-01
22 A millisecond-anneal-assisted selective fully silicided (FUSI) gate process
 2008-09-01
23 A parabolic potential barrier-oriented compact model for the kappa T-B layer's width in nano-MOSFETs
 2008-05-01
24 Electrical measurement of local stress and lateral diffusion near Source/Drain extension corner of uniaxially stressed n-MOSFETs
 2008-03-01
25 Probing a nonuniform two-dimensional electron gas with random telegraph signals
 2008-02-01
26 A constant-mobility method to enable MOSFET series-resistance extraction
 2007-12-01
27 Measurement of channel stress using gate direct tunneling current in uniaxially stressed nMOSFETs
 2007-09-01
28 Temperature-oriented experiment and simulation as corroborating evidence of MOSFET backscattering theory
 2007-02-01
29 Modeling the well-edge proximity effect in highly scaled MOSFETs
 2006-11-01
30 Effect of uniaxial strain on anisotropic diffusion in silicon
 2006-10-16
31 Reproducing subthreshold characteristics of metal-oxide-semiconductor field effect transistors under shallow trench isolation mechanical stress using a stress-dependent diffusion model
 2006-08-01
32 A novel self-aligned highly reliable sidewall split-gate flash memory
 2006-03-01
33 Channel-width dependence of low-frequency noise in process tensile-strained n-channel metal-oxide-semiconductor transistors
 2006-02-06
34 Semiconducting single-walled carbon nanotubes exposed to distilled water and aqueous solution: Electrical measurement and theoretical calculation
 2006-01-30
35 Oxide-trap-enhanced Coulomb energy in a metal-oxide-semiconductor system 2005-12-01
36 Modeling mechanical stress effect on dopant diffusion in scaled MOSFETs
 2005-01-01
37 Separation of channel backscattering coefficients in nanoscale MOSFETs
 2004-09-01
38 Edge quantum yield in n-channel metal-oxide-semiconductor field-effect transistor
 2004-08-01
39 Forward bias enhanced channel hot electron injection for low-level programming improvement in multilevel flash memory 2004-07-01
40 Improved subthreshold slope method for precise extraction of gate capacitive coupling coefficients in stacked gate and source-side injection flash memory cells
 2004-07-01
41 Active devices under CMOS I/O pads
 2002-12-01
42 On-off switching of edge direct tunneling currents in metal-oxide-semiconductor field-effect transistors
 2002-10-28
43 A new process-variation-immunity method for extracting capacitance coupling coefficients in flash memory cells
 2002-07-01
44 Characterization and Modeling of on-chip spiral inductors for Si RFICs
 2002-02-01
45 Edge hole direct Tunneling leakage in ultrathin gate oxide p-channel MOSFETs
 2001-12-01
46 Numerical confirmation of inelastic trap-assisted tunneling (ITAT) as SILC mechanism
 2001-10-01
47 Active circuit's under wire bonding I/O, pads in 0.13 mu m eight-level Cu metal, FSG low-K inter-metal dielectric CMOS technology(+)
 2001-10-01
48 ESD protection under grounded-up bond pads in 0.13 mu m eight-level copper metal, fluorinated silicate glass low-k intermetal dielectric CMOS process technology
 2001-07-01
49 Characterization and modeling of edge direct tunneling (EDT) leakage in ultrathin gate oxide MOSFETs
 2001-06-01
50 A trap generation closed-form statistical model for intrinsic oxide breakdown
 2001-06-01
51 Extraction of eleven model parameters for consistent reproduction of lateral bipolar snapback high-current I-V characteristics in NMOS devices
 2001-06-01
52 Low-frequency noise in n-channel metal-oxide-semiconductor field-effect transistors undergoing soft breakdown
 2001-01-01
53 Families of graphs closed under taking powers
 2001-01-01
54 A physical model for hole direct tunneling current in P+ poly-gate PMOSFETs with ultrathin gate oxides
 2000-11-01
55 Forward gated-diode measurement of filled traps in high-field stressed thin oxides
 2000-08-01
56 Oxide thinning percolation statistical model for soft breakdown in ultrathin gate oxides
 2000-07-24
57 A novel cross-coupled inter-poly-oxide capacitor for mixed-mode CMOS processes
 1999-07-01
58 An extraction method to determine interconnect parasitic parameters
 1998-11-01
59 A physical model for the correlation between holding voltage and holding current in epitaxial CMOS latch-up
 1998-08-01
60 Well supply voltage effect on escape current of guard rings in epitaxial CMOS technology
 1998-05-01
61 Back-gate bias enhanced band-to-band tunneling leakage in scaled MOSFET's
 1998-04-01
62 A model for low-temperature operation of minority-carrier well-type guard rings in epitaxial CMOS structures
 1998-03-01
63 A three-parameters-only MOSFET subthreshold current CAD model considering back-gate bias and process variation
 1997-04-01
64 Low-temperature characteristics of well-type guard rings in epitaxial CMOS
 1996-12-01
65 Multiple-training bi-directional adaptive equalizers for TDMA digital cellular systems
 1996-07-01
66 Back-gate forward bias method for low-voltage CMOS digital circuits
 1996-06-01
67 Optimizing the match in weakly inverted MOSFET's by gated lateral bipolar action
 1996-05-01
68 A new quantitative model for weak inversion charge injection in MOSFET analog switches
 1996-02-01
69 High gain p-n-p gated lateral bipolar action in a fully depleted counter-type: Channel p-MOSFET structure
 1996-02-01
70 BASE CURRENT REVERSAL PHENOMENON IN A CMOS COMPATIBLE HIGH-GAIN N-P-N GATED LATERAL BIPOLAR-TRANSISTOR
 1995-02-01
71 EMPIRICAL MODELING FOR GATE-CONTROLLED COLLECTOR CURRENT OF LATERAL BIPOLAR-TRANSISTORS IN AN N-MOSFET STRUCTURE
 1995-01-01
72 FOWLER-NORDHEIM LIMITED BAND-TO-BAND TUNNELING (FNBB) FOR P-MOSFET GATE CURRENT IN A FLOATING BULK CONDITION
 1995-01-01
73 DESIGN-MODEL AND GUIDELINE FOR N-WELL GUARD RING IN EPITAXIAL CMOS
 1994-10-01
74 NEW OBSERVATION AND THE MODELING OF GATE AND DRAIN CURRENTS IN OFF-STATE P-MOSFETS
 1994-05-01
75 NEW OBSERVATION OF CHARGE INJECTION IN MOS ANALOG SWITCHES
 1994-02-03
76 ANALYTICAL DESIGN FORMULATION FOR MINORITY-CARRIER WELL-TYPE GUARD RINGS IN CMOS CIRCUITS
 1993-06-01
77 A STUDY OF LATCH-UP HYSTERESIS IN N-WELL CMOS BY MEANS OF I-V-CHARACTERISTICS AND PHOTOEMISSION TECHNIQUES 1993-04-01
78 GATE AND DRAIN CURRENTS IN OFF-STATE BURIED-TYPE P-CHANNEL LDD MOSFETS
 1992-12-01
79 PREVENTIVE STRUCTURAL-ANALYSIS OF DATA-FLOW DIAGRAMS 1992-02-01
80 NEW OBSERVATION OF GATE CURRENT IN OFF-STATE MOSFET
 1991-09-01
81 RESTRUCTURING OPERATIONS FOR DATA-FLOW DIAGRAMS
 1991-07-01
82 EFFECT OF BACK-GATE BIAS ON TUNNELING LEAKAGE IN A GATED P+-N DIODE
 1991-05-01
83 A SIMPLIFIED COMPUTER-ANALYSIS FOR NORMAL-WELL GUARD RING EFFICIENCY IN CMOS CIRCUITS 1987-08-01
84 A NEW STRUCTURE-ORIENTED MODEL FOR WELL RESISTANCE IN CMOS LATCHUP STRUCTURES
 1987-04-01
85 CORRELATIONS BETWEEN CMOS LATCH-UP CHARACTERISTICS AND SUBSTRATE STRUCTURE PARAMETERS 1986-10-01
86 AN EFFICIENT METHOD FOR CALCULATING THE DC TRIGGERING CURRENTS IN CMOS LATCH-UP 1986-05-01
87 A NEW ANALYTICAL 3-DIMENSIONAL MODEL FOR SUBSTRATE RESISTANCE IN CMOS LATCHUP STRUCTURES
 1986-04-01
88 AN EFFICIENT TWO-DIMENSIONAL MODEL FOR CMOS LATCHUP ANALYSIS 1986-04-01
89 A NEW METHOD FOR COMPUTER-AIDED OPTIMIZATION OF SOLAR-CELL STRUCTURES 1985-01-01
90 A STRUCTURE-ORIENTED MODEL FOR DETERMINING THE SUBSTRATE SPREADING RESISTANCE IN BULK CMOS LATCH-UP PATHS AND ITS APPLICATION IN HOLDING CURRENT PREDICTION 1985-01-01

Others

序號
No.		 標題
Title		 著作日期
Date
1 Unsusal metastasis of gastric carcinoma to the thyroid and lung: a case report and review of literature 2009-10-01
2 Video-thoracoscopic enucleation of esophageal leiomyoma 2009-10-01
3 WEAK INVERSION CHARGE INJECTION IN ANALOG MOS SWITCHES
 1995-05-01

Patents

序號
No.		 標題
Title		 著作日期
Date
1 MATRIX DISPLAY INTERFACE FOR PRESENTATION SYSTEM
 2010-02-25
2 LEAPING ITERATIVE COMPOSITION METHOD OF COMPLICATED GRAPHIC AND STORAGE MEDIUM HAVING COMPUTER PROGRAM EXECUTING THE SAME
 2009-09-24
3 Computer executable graphic method of generating animation elements
 2007-04-26
4 Method and computer program for constructing complex structure graphic
 2006-10-19

Plan

序號
No.		 標題
Title		 著作日期
Date
1 次10奈米平面及非平面場效電晶體之通道非平衡效應：實驗及模擬 2014
2 閘穿隧電流, 遷移率, 及隨機電報雜訊作為金屬閘高介質應變鰭狀及平面場效電晶體物理機制之測試載具研究 2013
3 次10奈米平面及非平面場效電晶體之通道非平衡效應: 實驗及模擬 2013
4 閘穿隧電流, 遷移率, 及隨機電報雜訊作為金屬閘高介質應變鰭狀及平面場效電晶體物理機制之測試載具研究 2012
5 次10奈米平面及非平面場效電晶體之通道非平衡效應: 實驗及模擬 2012
6 適用於通道特性長度低至十奈米左右之一維及二維奈米場效電晶體的非平衡通道背向散射模式架構
 2011
7 閘穿隧電流, 遷移率, 及隨機電報雜訊作為金屬閘高介質應變鰭狀及平面場效電晶體物理機制之測試載具研究 2011
8 適用於通道特性長度低至十奈米左右之一維及二維奈米場效電晶體的非平衡通道背向散射模式架構
 2010
9 高度微縮金氧半電晶體應變工程及物理機制之研究
 2010
10 高度微縮金氧半電晶體應變工程及物理機制之研究
 2009
11 適用於通道特性長度低至十奈米左右之一維及二維奈米場效電晶體的非平衡通道背向散射模式架構
 2009
12 非揮發性記憶體奈米尺寸陷阱物理暨相關可靠性物理之嶄新研究 2008
13 高度微縮金氧半電晶體應變工程及物理機制之研究
 2008
14 奈米CMOS通道背向散射實驗及其潛在性應用之研究(III)
 2007
15 非揮發性記憶體奈米尺寸陷阱物理暨相關可靠性物理之嶄新研究 2007
16 奈米CMOS通道背向散射實驗及其潛在性應用之研究(II) 2006
17 非揮發性記憶體奈米尺寸陷阱物理暨相關可靠性物理之嶄新研究 2006
18 奈米CMOS通道背向散射實驗及其潛在性應用之研究(I)
 2005
19 高度微縮金氧半場效電晶體機械應力效應之研究(III)
 2005
20 高度微縮金氧半場效電晶體機械應力效應之研究(II)
 2004
21 矽奈米場效電晶體及氧化層奈米線---理論, 實驗及應用潛力(III)
 2004
22 高度微縮金氧半場效電晶體機械應力效應之研究(I)
 2003
23 矽奈米場效電晶體及氧化層奈米線：理論、實驗、及應用潛力(II)
 2003
24 矽奈米場效電晶體及氧化層奈米線---理論、實驗及應用潛力(I)
 2002
25 超薄氧化層高等可靠性物理暨次世代快閃式記憶體之前瞻性研究
 2001
26 深次微米MOSFET穿隧漏電流、鎖定及靜電放電之研究(II)
 2000
27 低功率低電壓數位及類比積體電路之晶片實現及設計法則(VI)
 2000
28 低功率低電壓數位及類比積體電路之晶片實現及設計法則(IV)
 1999
29 深次微米MOSFET穿隧漏電流、鎖定及靜電放電之研究
 1999
30 次微米互補式金氧半靜電放電及鎖定之實驗研究及防制 1996
31 低功率低電壓數位及類比積體電路之晶片實現及設計法則 1996
32 次臨界 CMOS 類比微功率積體電路及高速高精確MOS取樣保存電路之研製 1995
33 抑制深次微米金氧半電晶體中能帶間穿隧漏電流引致性能劣化之設計規範 1995
34 次微米元件可靠性量測技術整合及其應用 1993

Proceedings Paper

序號
No.		 標題
Title		 著作日期
Date
1 Automatic Rack Cabinet Management System for Data Center 2013-01-01
2 Plausible origin of electromigration lifetime extrapolation difference between wafer level isothermal test and package level constant current test 2004-01-01
3 Fast and precise subthreshold slope method for extracting gate capacitive coupling coefficient in flash memory cells 2003-01-01
4 Temperature dependent channel backscattering coefficients in nanoscale MOSFETs 2002-01-01
5 Characterization and modeling of on-chip inductor substrate coupling effect
 2002-01-01
6 Characterization and Modeling of on-chip inductor substrate coupling effect
 2002-01-01
7 Monte Carlo sphere model for effective oxide thinning induced extrinsic breakdown
 2000-04-01
8 Edge hole direct tunneling in off-state ultrathin gate oxide p-channel MOSFETs
 2000-01-01
9 Holographic polarization-selective elements in optical network applications
 1996-01-01

Thesis

序號
No.		 標題
Title		 著作日期
Date
1 結合教學元素管理之小組投票活動 對國小五年級學生英語高頻用字 學習成效之影響 2014
2 電漿子強化矽場效電晶體之遠距庫倫效應 2014
3 長距庫倫作用於塊材矽之探討 2014
4 次臨界區奈米級金氧半場效電晶體之隨機擾動訊號振幅統計分佈引致臨界電壓偏移之建模化 2014
5 以固定一邊為起點探討國中三角形全等性質補救教學之研究 2013
6 速度過衝減弱化之超短通道雙閘極金氧半場效電晶體 2013
7 探討奈米級場效電晶體之遠距庫倫效應 2013
8 次臨界區奈米級金氧半場效電晶體之隨機擾動訊號切換強度之建模化 2013
9 奈米尺度場效電晶體中電漿子引致長距庫侖效應之研究 2013
10 教材元素之管理對學生學習成效及認知負荷之影響—以國中三角形外心補救教學為例 2013
11 一種新穎自行開發之快速精準量子模擬器用於三維度高應力下矽電洞能帶結構及反置層遷移率之研究
 2012
12 n型反置層精準量子計算：應變、次能帶、遷移率及三維結構
 2012
13 提昇TFT-LCD 廠去光阻劑回收效益 2012
14 高介電金屬閘金氧半場效電晶體之隨機擾動電子訊號：實驗、建模與TCAD模擬
 2012
15 三維應力引致(001)和(110) p型場效電晶體反置層電洞遷移率變化之研究 2012
16 雙閘極金氧半場效電晶體模擬器 2012
17 高介電係數金屬閘極層穿隧電流機制探討 2012
18 深蝕刻分布式布拉格反射鏡之微共振腔邊射型雷射之研究
 2012
19 利用實驗驗證場效電晶體之汲極與源極之遠距庫倫效應
 2012
20 馬西森定則在金氧半場效電晶體電子通用遷移率造成的誤差並其修正 2012
21 教學脈絡與成就水準對基本尺規作圖學習成效之研究 2012
22 長方形概括底高為模組對平面圖形面積 補救教學成效之研究 2012
23 圖文步驟化與同步呈現對於國中圓與切線性質學習成效之比較研究 2012
24 以視覺分離、對應與提示元素在國中英語數位教材設計之研究-以數字讀法為例 2012
25 以直角三角形為模組對兩圓公切線尺規作圖學習成效之影響 2012
26 金氧半及鰭式場效電晶體閘極穿隧電流之先進模擬及其潛在應用
 2011
27 利用溫度效應實驗分析奈米級超薄介電層場效電晶體之遠距散射機制
 2011
28 新穎六層k•p模擬器用於受應力(001)及(110)Ｐ型複晶矽，全矽化及金屬閘極Ｐ通道金氧半場效電晶體之閘極電洞穿隧電流
 2011
29 金屬閘高介電n型金氧半場效電晶體及鰭式電晶體閘極電子穿隧電流的精確模擬
 2011
30 適用於H.264/MPEG4-AVC及其可調式視訊編碼之高效頻寬移動估測研究
 2011
31 資料中心機櫃自動化管理系統
 2011
32 新穎稀土激活氟磷酸鹽與氟矽酸鹽螢光體之製備與發光特性鑑定 2011
33 視覺引導在國中數形規律教學上之應用
 2011
34 運用狀態轉換圖於高中數學轉移矩陣教學之研究
 2011
35 應用數位數學教學模式於國小六年級等量公理概念之教學研究
 2011
36 激發式動態教學結合電子白板應用於幾何教學之研究 -以外角定理為例
 2011
37 奈米尺寸金氧半場效電晶體之重要製程開發
 2010
38 利用通道背向散射理論及溫度係數模型分析奈米級金氧半電晶體電子遷移率的劣化之研究
 2010
39 快速計算的二維反轉層模擬器
 2010
40 閘極高介電值絕緣層穿隧電流的模擬
 2010
41 金氧半場效應電晶體在次臨界區的不匹配效應
 2010
42 示意圖結合多媒體教學對國小六年級學習槓桿原理之影響
 2010
43 利用認知診斷評量探討數位教材設計對學習成效之影響—以排容原理為例
 2010
44 多元表徵應用於二元一次聯立方程式文字題列式教學之研究
 2010
45 利用認知診斷評量探討分隔訊息之交互作用對學生學習成效的影響-以三角形重心幾何證明為例
 2010
46 發展小數除法數位化教學方案之行動研究 2010
47 視覺引導在代數教材設計之探討－以解二元一次聯立方程式為例
 2010
48 對製程中引發應力之P-型通道金氧半電晶體的1/f 雜訊研究
 2009
49 利用通道背向散射理論對遠距庫倫散射遷移率之研究
 2009
50 激發式動態呈現對學習成效與認知負荷影響之研究-以一元一次方程式為例
 2009
51 製程引起機械應力N型通道金氧半電晶體中之穿隧漏電流的特性量測與模型化
 2009
52 財團法人導入ABC基礎成本制之設計與效益分析 2009
53 激發式動態教學對學習成效與認知負荷影響之研究─以簡易二次函數圖形為例
 2009
54 注意力引導在動態教學設計之研究-以細胞分裂與減數分裂為例
 2009
55 虛擬教具應用於國中學生學習多項式展開與因式分解之影響
 2009
56 激發式動態教學對學習成效與認知負荷影響之研究-以浮力為例
 2009
57 注意力引導在激發式動態教學之研究-以靜電學為例
 2009
58 教材設計與解說方式對於學習表現和眼動影響之初探-以三角形內角題目為例
 2008
59 激發式動態呈現教學設計之研究－逐步呈現與同時呈現之比較
 2008
60 激發式動態教學對三角形外心的學習成效之研究
 2008
61 應變金氧半場效電晶體機械應力萃取與其相關物理模型建立之研究
 2008
62 閘極直接穿隧及邊緣直接穿隧實驗施於有縱向及橫向應力N-型通道金氧半場效電晶體
 2007
63 針對高度微縮金氧半場效電晶體的參數精確萃取方法
 2007
64 奈米級金氧半場效電晶體應變矽物理之研究
 2007
65 p型金氧半電晶體反轉層電洞遷移率的物理計算
 2007
66 奈米金氧半場效電晶體匹配特性之研究
 2007
67 背向散射理論應用於金氧半場效電晶體之非匹配特性研究
 2007
68 奈米尺寸金氧半場效電晶體通道背向散射:蒙地卡羅模擬與物理模型
 2007
69 先進金氧半場效電晶體對於佈局之依賴效應
 2006
70 先進元件中原子尺寸缺陷之研究
 2005
71 超薄雙閘極金氧半場效電晶體與矽奈米線電晶體涵蓋通道背向散射效應之物理解析模型
 2005
72 背向散射理論應用於金氧半場效電晶體在飽和區不匹配效應之物理模型
 2005
73 背閘偏壓對於次臨界區電路不匹配效應之控制與其物理模型
 2005
74 企業實力矩陣研究-以台灣無線網路設備製造業為例 2005
75 超細薄膜奈米雙閘場效電晶體含括返向通量比之物理解析式模型
 2004
76 奈米金氧半場效電晶體之通道熱能區背向散射實驗
 2004
77 利用自動車作基於視覺之室內安全巡邏
 2004
78 應變矽的金屬氧化物半導體場效電晶體
 2003
79 奈米級金氧半場效電晶體之通道背向式散射係數萃取
 2003
80 超大型級晶片可靠度分析及主動元件安裝於金氧半電晶體之輸出入墊片下之研究與製程技術智財自動化之設計 2002
81 奈米場效電晶體之通道逆向散射實驗 2002
82 晶圓之場效電晶體機械應力之監測 2002
83 順偏強化寫入機制於快閃式記憶體之探討 2002
84 新式快閃式記憶體電容耦合參數之萃取方法 2001
85 奈米尺寸金氧半場效電晶體通道逆向散射實驗與理論 2001
86 超薄閘極氧化層之球體模型及崩潰物理 2001
87 金氧半電晶體的邊緣直接穿透電流之隨機擾動 2001
88 磊晶互補式金氧半鎖定物理模型及晶片靜電放電保護 2000
89 超薄閘極氧化層退化機制之完整研究 2000
90 快閃記憶體的特性、分析以及參數萃取 2000
91 超薄閘氧化層電晶體中量子效益及軟崩潰之嶄新實驗觀察 2000
92 金氧半場效電晶體臨界電壓之不匹配模型和對電路良率的衝擊 1999
93 超薄氧化層厚度的萃取 1999
94 對深次微米金氧半電晶體在軟崩潰之後的1/f 雜訊之研究 1999
95 磊晶層厚度對MOS靜電放電可靠性之衝擊 1999
96 Deep Submicron CMOS Reliability Concerns: TDDB and Tunneling Leakage 1999
97 超薄氧化層C-V特性之透納成分 1998
98 深次微米MOSFET通道引致二次電子閘極電流之研究 1998
99 次臨界互補式金氧半類比積體電路之匹配誤差分析 1996
100 深次微米CMOS時間介電崩潰及鎖定之研究 1996
101 背閘極偏壓對深微米MOSFET熱電子引致閘極電流注入之影響 1996
102 基座交連特性量測及低於1伏電壓參考源之實現 1996
103 一個2伏特1GHz之CMOS相鎖迴路 1996
104 深次微米CMOS時間介電崩潰及鎖定之研究 1996
105 低電壓觸發矽控整流靜電放電保護結構之徹底研究 1995
106 次臨界互補式金氧半匹配誤差分析 1995
107 閘控雙載子電晶體之新穎應用:動態臨界電壓互補式金氧半電路及簡潔的靜態隨機存取記憶體單元 1995
108 金氧半類比開關中電荷注入效應的特性量測分析及補償電路設計 1995
109 深次微米互補式金氧半中靜電放電與阿爾法粒效應之研究 1995
110 背閘偏壓控制對低電壓、低功耗互補式金氧半類比數位積體電路之衝擊 1995
111 與互補式金氧半製程相容的高增益閘型側向雙載子電晶體﹕特性分析､模型､及應用 1994
112 Accurate Modeling of Back-Gate Bias and Temperature Effect in Weakly Inverted MOSFETs 1994
113 使用於低電源電壓互補式金氧半數位電路之背閘順偏技巧 1994
114 電流脈波引致次微米金氧半電晶體劣化及防制靜電放電之矽控鎖定 1994
115 次微米互補式金氧半鎖定及基座偏壓產生器 1994
116 電晶體匹配改進技巧及次臨界類比互補式金氧半計算電路 1994
117 實現高性能互補式金氧半數位電路之背閘順偏及源極阻抗開關技巧 1994
118 次微米互補式金氧半鎖定及基座偏壓產生器 1994
119 IS-54無線通信標準之數位接收器模擬 1994
120 與互補式金氧半製程相容的高增益閘型側向雙載子電晶體e特性分析,模型,及應用 1994
121 磊晶互補式金氧半中少數載子井狀保護環的特性分析、模擬及模式化 1994
122 關止狀態應力引致金氧半電晶體性能之劣化 1993
123 關止狀態下金氧半電晶體異常能帶間穿隧漏電流特性之深入研究 1993
124 實驗性次臨界互補式金氧半電路 1993
125 取樣保持電路中電荷注入效應的分析與控制 1993
126 自動對準矽化鈷技術在極大型積體電路上的應用 1993
127 互補式金氧半可靠性的嶄新觀察:漏電流及鎖定 1993
128 金氧半電晶體次臨界電流之統計模擬 1992
129 薄氧化層金氧半電晶體閘極引致汲極漏電流之測量與模擬 1992
130 實現耳蝸之次臨界互補式金氧半電路 1992
131 高精確度高速取樣保持電路之分析與設計 1992
132 浮閘金氧半電晶體用於類比式記憶元件之研究 1991
133 使用反應面方法於雙載子元件的最佳化 1991
134 閘控二極體的漏電流特性量測及應用 1991
135 互補式金氧半鎖定模擬 1991
136 互補式金氧半積體電路中的栓鎖現象:實驗觀察與抑制方法 1989
137 高注入下雙載子電晶體之異常現象實驗,S參數萃取與模型 1989
138 雙載子電晶體的統計分析 1989
139 使用電荷幫浦技巧以研究金氧半電晶體因熱載子效應引致之性能退化 1989
140 複晶矽射極雙載子技術:實驗與模擬 1989
141 雙載子互補式金氧半驅動電路之特性 1989
142 一種改良的微小化雙載子電晶體截止頻率模式 1989
143 一種精確量測技巧以監督互補式金氧半鎖住 1989
144 互補式金氧半積體電路中靜電放電引起之故障分析 1989
145 在雙載子互補式金氧半環境下埋入層對 n通道金氧半電晶體元件特性之效應 1989
146 利用互補式次臨界漏電流特性而以超大型積體電路技術研製之類神經網路 1989
147 雙載子互補式金氧半閘之統計分析 1989
148 純粹雙載子及混合雙載子互補式金氧半技術中寄生雙載子電晶體之研究 1989
149 操作在次臨界的浮閘極EEPROM作為可程式神經鍵的元件 1989
150 一種改良的微小化雙載子電晶體截止頻率模式 1989
151 高注入下雙載子電晶體之異常現象實驗,S參數萃取與模型 1989
152 台電現金規劃之研究 1988
153 一種新式結構導向一度空間矽雙載子模擬器 1987
154 互補式金氧半超大型積體電路中基座轉移電阻之模擬 1987
155 晶片上雙載子互補式金氧半驅動器之最佳化 1987
156 互補式金氧半超大型積體電路中一種新的井狀保護計算機輔助設計 1986
157 磊晶互補式金氧半超大型積體電路中井狀保護環的製造，測試及最佳設計 1986
158 互補式金氧半超大型積體電路之矽控整流鎖住的穩態與暫態特性分析、模擬與預測 1985
159 互補式金氧半超大型積體電路之矽控整流鎖住的模擬與預測 1984
160 實現耳蝸之次臨界互補式金氧半電路 1984
161 計算機輔助設計高電壓雙極性功率電晶體 1979
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