1. 目前位置：
李建平

李建平 Lee, Chien-Ping

電子郵件／E-mail：cplee@mail.nctu.edu.tw

服務單位／Department：電機學院 ／ 奈米科技中心

著作期間／Publish Period：1987 - 2014-09-15

著作統計／Statistics

Article（213）
Others（3）
Plan（64）
Proceedings Paper（57）
Thesis（123）

Article

序號
No.		 標題
Title		 著作日期
Date
1 Compositional grading in GaAsSb grown on GaAs substrates
 2014-09-15
2 Local structure and magnetic properties of ferromagnetic GaMnAs made by helium ion induced epitaxial crystallization annealing
 2014-08-15
3 Rolling up Ge microtube from bare-Ge substrate
 2014-08-15
4 Insulating state to quantum Hall-like state transition in a spin-orbit-coupled two-dimensional electron system
 2014-07-07
5 InAs-based heterostructure field-effect transistor using AlAs0.16Sb0.84 double barriers
 2014-07-03
6 Electrical characteristics of Ni Ohmic contact on n-type GeSn
 2014-06-16
7 Low temperature and high magnetic field spectroscopic ellipsometry system
 2014-05-01
8 Effect of interfacial layer on the crystal structure of InAs/AlAs0.16Sb0.84/AlSb quantum wells
 2014-04-28
9 Studies of Safe Operating Area of InGaP/GaAs Heterojunction Bipolar Transistors
 2014-04-01
10 High-quality planar light emitting diode formed by induced two-dimensional electron and hole gases
 2014-02-24
11 Room-temperature mid-infrared "M"-type GaAsSb/InGaAs quantum well lasers on InP substrate
 2014-02-14
12 Low repetition rate and broad frequency tuning from a grating-coupled passively mode-locked quantum dot laser
 2013-11-18
13 Investigation of quantum dot passively mode-locked lasers with excited-state transition
 2013-11-04
14 Well-thickness dependent electron transport effective mass and mobility in Sb-based quantum wells
 2013-02-01
15 Design and modeling of InP-based InGaAs/GaAsSb type-II "W" type quantum wells for mid-Infrared laser applications
 2013-01-28
16 Lateral Two-Dimensional p-i-n Diode in a Completely Undoped GaAs/AlGaAs Quantum Well
 2013-01-01
17 Carrier dynamics in modulation-doped InAs/GaAs quantum rings
 2013-01-01
18 Room Temperature Optically Pumped 2.56-mu m Lasers With "W" Type InGaAs/GaAsSb Quantum Wells on InP Substrates
 2012-07-01
19 Ferromagnetic GeMn thin film prepared by ion implantation and ion beam induced epitaxial crystallization annealing
 2012-06-11
20 Voltage-tunable dual-band quantum dot infrared photodetectors for temperature sensing
 2012-05-07
21 A strictly nonblocking network based on nonblocking 4 x 4 optical switches
 2012-01-01
22 Effect of the electromagnetic environment on the dynamics of charge and phase particles in one-dimensional arrays of small Josephson junctions
 2011-11-01
23 Anomalous optical magnetic shift of self-assembled GaSb/GaAs quantum dots
 2011-07-01
24 Effects of crossed states on photoluminescence excitation spectroscopy of InAs quantum dots
 2011-06-02
25 Electron delocalization of tensily strained GaAs quantum dots in GaSb matrix
 2010-12-15
26 2-3 mu m mid infrared light sources using InGaAs/GaAsSb "W" type quantum wells on InP substrates
 2010-11-15
27 Vertically Coupled Quantum-Dot Infrared Photodetectors
 2010-06-01
28 Impacts of Coulomb Interactions on the Magnetic Responses of Excitonic Complexes in Single Semiconductor Nanostructures
 2010-04-01
29 Shape dependent carrier dynamics in InAs/GaAs nanostructures
 2009-12-01
30 Impacts of structural asymmetry on the magnetic response of excitons and biexcitons in single self-assembled In(Ga)As quantum rings 2009-08-01
31 Temperature dependence of time-resolved photoluminescence spectroscopy in InAs/GaAs quantum ring
 2009-05-04
32 Characteristics of In(Ga)As quantum ring infrared photodetectors
 2009-02-01
33 Long-Wavelength Quantum-Dot Infrared Photodetectors With Operating Temperature Over 200 K
 2009-01-01
34 Carrier Dynamics in InAs/GaAs Quantum Rings 2009-01-01
35 Modeling the Simultaneous Two Ground-State Lasing Emissions in Chirped Quantum Dot Lasers
 2009-01-01
36 Effect of double heterojunctions on the plasmon-phonon coupling in a GaAs/Al(0.24)Ga(0.76)As quantum well
 2008-12-01
37 Energy-dependent carrier relaxation in self-assembled InAs quantum dots
 2008-06-15
38 High quantum efficiency dots-in-a-well quantum dot infrared photodetectors with AlGaAs confinement enhancing layer
 2008-05-12
39 A phenomenological model for the reliability of GaAs based heterojunction bipolar transistors
 2008-05-01
40 Ordering of stacked InAs/GaAs quantum-wires in InAlAs/InGaAs matrix on (100) InP substrates
 2008-01-01
41 Energy dependent carrier relaxation in self-assembled InAs/GaAs quantum dots
 2008-01-01
42 Averaging and cancellation effect of high-order nonlinearity of a power amplifier
 2007-12-01
43 Evolution of self-assembled InAs quantum ring formation
 2007-07-15
44 Discrete monolayer light emission from GaSb wetting layer in GaAs
 2007-06-11
45 Electrically driven integrated photonic crystal nanocavity coupled surface emitting laser
 2007-04-09
46 Temperature dependent responsivity of quantum dot infrared photodetectors
 2007-04-01
47 Time-domain and spectral-domain investigation of inflection-point slow-light modes in photonic crystal coupled waveguides
 2007-03-19
48 Mobility asymmetry in InGaAs/InAlAs heterostructures with InAs quantum wires
 2007-02-21
49 Wavelength switching transition in quantum dot lasers
 2007-02-19
50 Strain study of self-assembled InAs quantum dots by ion channeling technique
 2006-11-15
51 The safe operating area of GaAs-based heterojunction bipolar transistors
 2006-11-01
52 Self-assembled InAs quantum wire lasers
 2006-09-01
53 Transmission electron microscopy studies of GaAs nanostructures in InGaAs/InP matrix grown by molecular beam epitaxy
 2006-09-01
54 Ultrafast carrier capture and relaxation in modulation-doped InAs quantum dots
 2006-04-17
55 Carrier capture and relaxation in InAs quantum dots
 2005-09-01
56 Photoluminescence of ultra small InAs/GaAs quantum dots 2005-08-10
57 An investigation of quantum states in ultra-small InAs/GaAs quantum dots by means of photoluminescence
 2005-08-01
58 Magneto-optical response of layers of semiconductor quantum dots and nanorings 2005-06-01
59 Interband magneto-optical transitions in a layer of semiconductor nano-rings
 2005-06-01
60 Subwavelength gratings fabricated on semiconductor substrates via E-beam lithography and lift-off method
 2005-03-01
61 Self-assembled GaAs antidots growth in InAs matrix on (100) InAs substrate
 2005-01-01
62 Evidence for capture of holes into resonant states in boron-doped silicon
 2004-11-01
63 High-sensitivity microwave vector detection at extremely low-power levels for low-dimensional electron systems
 2004-11-01
64 Computer simulation of multifinger heterojunction bipolar transistor with self-heating and thermal coupling models
 2004-08-01
65 Formation of semiconductor quantum rings using GaAs/AlAs partially capped layers
 2004-07-01
66 Temperature-dependent electron transport properties of AlGaN/GaN heterostructures
 2004-06-01
67 Spin-dependent Hall effect in semiconductor quantum wells
 2004-02-15
68 Ultra-high-density InGaN quantum dots grown by metalorganic chemical vapor deposition
 2004-02-15
69 Magnetic properties of parabolic quantum dots in the presence of the spin-orbit interaction
 2003-11-01
70 Significance of dimensionality and dynamical screening on hot carrier relaxation in bulk GaAs and quantum wells
 2003-11-01
71 Improvement of near-ultraviolet InGaN/GaN light-emitting diodes by inserting an in situ rough SiN(x) interlayer in n-GaN layers 2003-10-27
72 A time-domain approach to simulation and characterization of RF HBT two-tone intermodulation distortion
 2003-10-01
73 Low resistance Ohmic contacts to n-GaN by Ar plasma and forming gas ambient treatments
 2003-07-01
74 Spin-orbit interaction and electron elastic scattering from impurities in quantum wells 2003-05-15
75 On the equivalence between magnetic-field-induced phase transitions in the integer quantum Hall effect
 2003-04-01
76 Tunneling through InAs quantum dots in AlGaAs/GaAs double barrier resonant tunneling diodes with InGaAs quantum well emitters
 2003-03-01
77 Relaxation mechanisms of the photoelectrons in the second miniband of a superlattice structure
 2003-02-01
78 Spin-dependent electron single and double scattering from quantum dots and antidots
 2003-02-01
79 Comparison of 1300 nm quantum well lasers using different material systems
 2002-12-01
80 GaAs metal-semiconductor-metal photodetectors with low dark current and high responsivity at 850 nm
 2002-12-01
81 Energy states and magnetization in nanoscale quantum rings 2002-10-15
82 Self-assembled GaAs antiwires in In0.53Ga0.47As matrix on (100) InP substrates
 2002-10-14
83 Selective growth and photoluminescence studies of InAs self-organized quantum dot arrays on patterned GaAs(001) substrates
 2002-10-01
84 Critical spacing between emitter and base in InGaP heterojunction bipolar transistors (HBTs)
 2002-10-01
85 Electron energy state spin-splitting in 3D cylindrical semiconductor quantum dots
 2002-08-01
86 Structure effects on electron-optical phonon interaction in GaAs/AlxGa1-xAs quantum wells
 2002-07-01
87 Two-dimensional field analysis of semiconductor lasers with small vertical beam divergence
 2002-07-01
88 Optimum design for a thermally stable multifinger power transistor
 2002-05-01
89 Optimum design for a thermally stable multifinger power transistor with temperature-dependent thermal conductivity
 2002-05-01
90 A computational method for energy level spin splitting simulation in InAs/GaAs semiconductor quantum dots 2002-05-01
91 Multicolor infrared detection realized with two distinct superlattices separated by a blocking barrier
 2002-04-01
92 Performance and application of a superlattice infrared photodetector with a blocking barrier
 2002-02-01
93 Selective growth of single InAs quantum dots using strain engineering
 2002-01-14
94 Electron energy state dependence on the shape and size of semiconductor quantum dots
 2001-12-15
95 Hole Schottky barrier height enhancement and its application to metal-semiconductor-metal photodetectors
 2001-12-01
96 Comparison of InGaP/InGaAs/GaAs and InGaPtInGaAs/AlGaAs pseudomorphic high electron mobility transistors
 2001-12-01
97 Computer simulation of electron energy levels for different shape InAs/GaAs semiconductor quantum dots
 2001-11-15
98 Electron energy level calculations for cylindrical narrow gap semiconductor quantum dot
 2001-11-01
99 Transport and optical studies of the D--conduction band in doped GaAs/AlGaAs quantum wells 2001-08-01
100 Spin-orbit energy state splitting in semiconductor cylindrical and spherical quantum dots
 2001-07-01
101 Time-resolved photoluminescence study of InGaAs/GaAs quantum wells on (111)B GaAs substrates under magnetic fields
 2001-06-15
102 Spin-orbit splitting in semiconductor quantum dots with a parabolic confinement potential 2001-04-15
103 Low dark current quantum-dot infrared photodetectors with an AlGaAs current blocking layer
 2001-02-19
104 Mode control of vertical-cavity surface-emitting lasers by germanium coating
 2001-02-01
105 Deep level transient spectroscopy characterization of InAs self-assembled quantum dots
 2001-01-15
106 Energy and coordinate dependent effective mass and confined electron states in quantum dots
 2001-01-01
107 Electron energy state spin-orbit splitting in nanoscopic quantum rings
 2001-01-01
108 InGaAs/GaAs quantum wells and quantum dots on (111)B orientation
 2001-01-01
109 Optical phonon emission in GaAs/AlAs and GaAs/Al0.7Ga0.3As multiple quantum well structures
 2000-12-01
110 Carrier-carrier scattering in GaAs/AlxGa1-xAs quantum wells 2000-06-15
111 Magneto-photoluminescence study of InGaAs/GaAs quantum wells and quantum dots grown on (111)B GaAs substrate
 2000-06-01
112 Wide angle distributed Bragg reflectors for 590 nm amber AlGaInP light-emitting diodes
 2000-02-15
113 A light-induced tunneling state in a submicron double barrier tunneling diode with a center-doped well
 2000-02-01
114 Electrooptical Properties of InGaAs/GaAs Strained Single Quantum Wells 2000-01-01
115 Nonuniform quantum well infrared photodetectors
 2000-01-01
116 Spin-polarized electronic current in resonant tunneling heterostructures
 2000-01-01
117 Carrier-carrier scattering: an experimental comparison of 5 and 3 nm AlxGa1-xAs/GaAs quantum wells
 2000-01-01
118 Spin-dependent delay time in electronic resonant tunneling at zero magnetic field
 2000-01-01
119 Raman and hot electron-neutral acceptor luminescence studies of electron-optical phonon interactions in GaAs/AlxGa1-xAs quantum wells
 2000-01-01
120 Optimization of OMVPE-grown GaInP/GaAs quantum well interfaces
 1999-10-01
121 Spin-dependent tunneling in double-barrier semiconductor heterostructures 1999-05-15
122 Time-resolved photoluminescence study of InGaAs/GaAs quantum wells on (111)B GaAs substrates
 1999-04-01
123 Spin-dependent electronic tunneling at zero magnetic field 1998-12-15
124 InGaAs/GaAs quantum dots on (111)B GaAs substrates 1998-09-01
125 Effects of doping in the active region of 630-nm band GaInP-AlGaInP tensile-strained quantum-well lasers
 1998-09-01
126 Formation of D(-) centers in GaAs/AlGaAs quantum wells 1998-06-01
127 Low-resistance vertical conduction across epitaxially lifted-off n-GaAs film and Pd/Ge/Pd coated Si substrate
 1998-03-01
128 High-performance two-wavelength asymmetric Fabry-Perot modulator with a decoupled cavity design
 1998-03-01
129 Thermal annealing of Pd/InAlAs Schottky contacts for transistor buried-gate technologies 1998-01-01
130 Optical and structural properties of epitaxially lifted-off GaAs films 1998-01-01
131 A Gunn-diode active leaky-wave frequency scanning antenna
 1998-01-01
132 Simulation and analysis of the capacitance-voltage characteristics of the delta-doped semiconductors
 1997-10-15
133 Varactor-tuned Gunn diode voltage controlled oscillator antenna array
 1997-10-01
134 Doping effect on normal incident InGaAs/GaAs long-wavelength quantum well infrared photodetectors 1997-09-01
135 Normal incident long-wavelength quantum well infrared photodetectors using electron intersubband transitions 1997-07-07
136 Reflection-type two-wavelength quantum well modulators
 1997-07-01
137 Normally on reflection-type two-wavelength quantum-well modulator with balanced cavity design
 1997-07-01
138 Stripe-geometry GaAs-InGaAs laser diode with back-side contact on silicon by epitaxial lift-off
 1997-06-05
139 Design of a resonant-cavity-enhanced photodetector for high-speed applications
 1997-05-01
140 Reflection-type normally-on two-wavelength modulator
 1997-03-27
141 Theoretical analysis of 630-nm band GaInP-AlGaInP strained quantum-well lasers considering continuum states
 1997-03-01
142 Deposition of polycrystalline beta-SiC films on Si substrates at room temperature 1997-01-13
143 Extremely small vertical far-field angle of InGaAs-AlGaAs quantum-well lasers with specially designed cladding structure
 1996-12-01
144 A novel energy filter using semiconductor superlattices and its application to tunneling time calculations
 1996-12-01
145 A voltage-tunable multicolor triple-coupled InGAs/GaAs/AlGaAs quantum-well infrared photodetector for 8-12 mu m detection 1996-10-14
146 Semiconductor lasers with unconventional cladding structures for small beam divergence and low threshold current 1996-10-01
147 Thermal reactions of Pd/AlxGa1-xAs contacts 1996-09-01
148 A novel cladding structure for semiconductor quantum-well lasers with small beam divergence and low threshold current
 1996-09-01
149 Numerical analysis of the transient behavior of the sidegating effect in GaAs MESFETs
 1996-07-01
150 An energy band-pass filter using superlattice structures
 1996-03-01
151 The effect of barrier structure on the performance of double barrier quantum well infra-red photodetectors
 1996-02-01
152 Numerical analysis of frequency dispersion of transconductance in GaAs MESFET's
 1996-02-01
153 Compositional disordering of InGaAs/GaAs heterostructures by low-temperature-grown GaAs layers 1996-01-15
154 Theoretical investigation on semiconductor lasers with passive waveguides
 1996-01-01
155 Growth of SiC films on Si(100) by electron cyclotron resonance chemical vapor deposition using SiH4/CH4/H-2
 1995-12-01
156 EVALUATION OF NI-IN-NI MULTILAYERS FOR THERMALLY STABLE OHMIC CONTACTS TO N-GAAS
 1995-09-01
157 ALGAAS/GAAS HETEROJUNCTION BIPOLAR-TRANSISTORS ON SI SUBSTRATE USING EPITAXIAL LIFT-OFF
 1995-09-01
158 COMPOSITIONAL DISORDERING OF ALGAAS/GAAS SUPERLATTICES BY USING THE LOW-TEMPERATURE-GROWN GAAS
 1995-07-01
159 AN ELECTRICAL METHOD TO CHARACTERIZE THERMAL-REACTIONS OF PD/GAAS AND NI/GAAS CONTACTS
 1995-06-01
160 KINETICS OF COMPOSITIONAL DISORDERING OF ALGAAS/GAAS QUANTUM-WELLS INDUCED BY LAW-TEMPERATURE GROWN GAAS 1995-05-01
161 2-DIMENSIONAL BI-PERIODIC GRATING-COUPLED ONE-COLOR AND 2-COLOR QUANTUM-WELL INFRARED PHOTODETECTORS
 1995-02-01
162 INFLUENCE OF X-VALLEY SUPERLATTICE ON ELECTRON BLOCKING BY MULTIQUANTUM BARRIERS 1994-11-21
163 ANALYSIS OF SURFACE-STATE EFFECT ON GATE LAG PHENOMENA IN GAAS-MESFETS
 1994-09-01
164 2-COLOR QUANTUM-WELL INFRARED PHOTODETECTOR WITH PEAK SENSITIVITIES AT 3.9 MU-M AND 8.1 MU-M
 1994-08-04
165 HETEROJUNCTION BIPOLAR-TRANSISTORS WITH EMITTER BARRIER LOWERED BY DELTA-DOPING
 1994-08-01
166 NUMERICAL-SIMULATION OF THE TEMPERATURE-DEPENDENCE OF THE SIDEGATING EFFECT IN GAAS-MESFETS 1994-08-01
167 INFLUENCE OF OXYGEN ON THE PERFORMANCE OF GAAS/ALGAAS QUANTUM-WELL INFRARED PHOTODETECTORS 1994-07-01
168 ASYMMETRIC DARK CURRENT IN QUANTUM-WELL INFRARED PHOTODETECTORS 1994-05-02
169 BINDING-ENERGIES OF D- ION IN GAAS QUANTUM-WELL 1994-04-01
170 VERTICAL INTEGRATION OF A GAAS/ALGAAS QUANTUM-WELL LASER AND A LONG-WAVELENGTH QUANTUM-WELL INFRARED PHOTODETECTOR
 1994-03-03
171 ENHANCEMENT OF ELECTRON-WAVE REFLECTION BY SUPERLATTICES WITH MULTIPLE STACKS OF MULTIQUANTUM BARRIERS 1994-02-28
172 NOVEL FABRICATION TECHNIQUE TOWARDS QUANTUM DOTS 1993-12-20
173 LIGHT-INDUCED SIDEGATING EFFECT IN GAAS-MESFETS
 1993-12-01
174 DUAL-WAVELENGTH BRAGG REFLECTORS USING GAAS/ALAS MULTILAYERS
 1993-10-28
175 INVESTIGATION OF INDIUM DOPING IN INGAAS GAAS ALGAAS GRADED-INDEX SEPARATED CONFINEMENT HETEROSTRUCTURE LASERS 1993-10-15
176 CURRENT GAINS OF ALAS/GAAS TUNNELING EMITTER BIPOLAR-TRANSISTORS WITH 25-500-ANGSTROM BARRIER THICKNESS
 1993-10-14
177 NUMERICAL-SIMULATION OF THE SUPPRESSION OF SIDEGATING EFFECTS IN GAAS-MESFETS BY ION-BOMBARDMENT 1993-10-01
178 EVIDENCE OF ZERO POTENTIAL SPIKE ENERGY IN ALGAAS GAAS HETEROSTRUCTURE EMITTER BIPOLAR-TRANSISTORS 1993-10-01
179 THE STUDY OF EMITTER THICKNESS EFFECT ON THE HETEROSTRUCTURE EMITTER BIPOLAR-TRANSISTORS 1993-07-15
180 2-COLOR INFRARED PHOTODETECTOR USING GAAS/ALGAAS AND STRAINED INGAAS/ALGAAS MULTIQUANTUM WELLS 1993-06-28
181 ROLE OF CLADDING LAYER THICKNESSES ON STRAINED-LAYER INGAAS/GAAS SINGLE AND MULTIPLE-QUANTUM-WELL LASERS 1993-06-15
182 NOVEL ALGAAS/GAAS HETEROJUNCTION BIPOLAR-TRANSISTORS FABRICATED BY 2-STAGE MOLECULAR-BEAM EPITAXY 1993-04-01
183 NUMERICAL-SIMULATION OF SIDEGATING EFFECT IN GAAS-MESFETS
 1993-04-01
184 TRANSMISSION ELECTRON-MICROSCOPY STUDY OF HEAVILY DELTA-DOPED GAAS GROWN BY MOLECULAR-BEAM EPITAXY 1993-01-15
185 INFLUENCE OF THIN PROTECTIVE INAS LAYERS ON THE OPTICAL-QUALITY OF ALGAAS AND QUANTUM-WELLS 1992-09-15
186 PHOTOREFLECTION STUDY ON THE SURFACE ELECTRIC-FIELD OF DELTA-DOPED GAAS GROWN BY MOLECULAR-BEAM EPITAXY 1992-08-15
187 FRANZ-KELDYSH OSCILLATIONS OF DELTA-DOPED GAAS 1992-08-01
188 NUMERICAL-SIMULATION OF THE HYSTERESIS IN THE SIDEGATING EFFECT IN GAAS-MESFETS - THE EFFECT OF SCHOTTKY CONTACTS
 1992-08-01
189 NUMERICAL-ANALYSIS OF THE PHOTOEFFECTS IN GAAS-MESFETS
 1992-07-01
190 DIRECT OBSERVATION OF SI DELTA-DOPED GAAS BY TRANSMISSION ELECTRON-MICROSCOPY 1992-05-25
191 INTRINSIC AND EXTRINSIC EFFECTS ON PERFORMANCE LIMITATION OF ALGAAS/GAAS DOUBLE-BARRIER RESONANT TUNNELING STRUCTURES 1992-05-01
192 HIGH-QUALITY ALGAAS LAYERS GROWN BY MOLECULAR-BEAM EPITAXY AT LOW-TEMPERATURES 1992-03-01
193 NUMERICAL-ANALYSIS OF THE LOOPING EFFECT IN GAAS-MESFETS
 1992-02-01
194 PRECISE DETERMINATION OF ALUMINUM CONTENT IN ALGAAS 1991-11-01
195 NUMERICAL-ANALYSIS OF THE FREQUENCY-DEPENDENT OUTPUT CONDUCTANCE OF GAAS-MESFETS
 1991-08-01
196 QUANTUM EFFECT IN THE ACCUMULATION LAYER ON FIELD-INDUCED PHOTOLUMINESCENCE OF DOUBLE-BARRIER RESONANT TUNNELING STRUCTURES 1991-07-01
197 2-DIMENSIONAL SIMULATION OF THE DRAIN-CURRENT TRANSIENT EFFECT IN GAAS-MESFETS 1991-04-01
198 ELECTRICAL CHARACTERISTICS OF DOUBLE-BARRIER RESONANT TUNNELING STRUCTURES WITH DIFFERENT ELECTRODE DOPING CONCENTRATIONS 1991-04-01
199 ANALYSIS OF SEVERAL HIGH-ELECTRON-MOBILITY-TRANSISTOR STRUCTURES BY A SELF-CONSISTENT METHOD 1991-03-01
200 MOLYBDENUM SILICIDE SCHOTTKY CONTACTS TO GAAS 1991-03-01
201 INVESTIGATION OF INDIUM DOPING AND INCORPORATION IN ALGAAS/GAAS DOUBLE-BARRIER RESONANT TUNNELING STRUCTURES
 1991-02-28
202 CHARACTERIZATION OF IMPROVED ALGAAS/GAAS RESONANT TUNNELING HETEROSTRUCTURE BIPOLAR-TRANSISTORS
 1991-02-01
203 RESONANT TUNNELING OF ELECTRONS FROM QUANTIZED LEVELS IN THE ACCUMULATION LAYER OF DOUBLE-BARRIER HETEROSTRUCTURES 1990-11-26
204 DELTA-DOPED QUANTUM-WELL STRUCTURES GROWN BY MOLECULAR-BEAM EPITAXY 1990-10-29
205 INFLUENCE OF INDIUM DOPING ON ALGAAS LAYERS GROWN BY MOLECULAR-BEAM EPITAXY
 1990-10-15
206 BEHAVIOR OF THE 1ST LAYER GROWTH IN GAAS MOLECULAR-BEAM EPITAXY 1990-10-01
207 2-DIMENSIONAL SIMULATION OF ORIENTATION EFFECTS IN SELF-ALIGNED GAAS-MESFETS
 1990-10-01
208 REPETITION OF NEGATIVE DIFFERENTIAL RESISTANCE IN VERTICALLY INTEGRATED DOUBLE-BARRIER RESONANT TUNNELING STRUCTURES 1990-05-01
209 COMPARISON OF AU/NI/GE, AU/PD/GE, AND AU/PT/GE OHMIC CONTACTS TO N-TYPE GAAS 1990-01-01
210 PERIODIC FLUX INTERRUPTION AND SUSTAINED TWO-DIMENSIONAL GROWTH FOR MOLECULAR-BEAM EPITAXY
 1989-11-23
211 COMPOSITIONAL DEPENDENCE OF THERMAL-STABILITY OF REFRACTORY-METAL SILICIDE SCHOTTKY CONTACTS TO GAAS 1989-09-01
212 ORIGIN OF THE ENHANCEMENT OF NEGATIVE DIFFERENTIAL RESISTANCE AT LOW-TEMPERATURES IN DOUBLE-BARRIER RESONANT TUNNELING STRUCTURES
 1989-07-01
213 TANTALUM SILICIDE SCHOTTKY CONTACTS TO GAAS 1989-01-15

Others

序號
No.		 標題
Title		 著作日期
Date
1 FUNDAMENTAL MODE-OPERATION OF HIGH-POWER INGAAS/GAAS/ALGAAS LASER ARRAYS 1993-05-01
2 A NOVEL TECHNIQUE FOR LOW-THRESHOLD AND HIGH-POWER INGAAS/GAAS STRAINED-LAYER 0.98-MU-M BURIED HETEROSTRUCTURE LASER FABRICATION 1992-02-01
3 IMPROVED ALGAAS/GAAS DOUBLE-BARRIER RESONANT TUNNELING STRUCTURES USING 2-DIMENSIONAL SOURCE ELECTRONS 1991-01-15

Plan

序號
No.		 標題
Title		 著作日期
Date
1 銻化物半導體中紅外線偵測器與雷射之研發與應用( II ) 2014
2 異質接面電晶體的安全操作範圍研究 (II) 2014
3 銻化物半導體中紅外線偵測器與雷射之研發與應用 (I) 2013
4 台灣聯合大學系統奈米科技核心設施服務計畫-交通大學(II) 2013
5 異質接面電晶體的安全操作範圍研究(I) 2013
6 台灣聯合大學系統奈米科技核心設施服務計畫-交通大學( I ) 2012
7 半導體量子元件及奈米結構之高效能與節能應用( III ) 2012
8 銻化合物半導體量子結構物理及元件應用 2012
9 銻化合物半導體量子結構物理及元件應用 2011
10 台灣聯合大學系統奈米科技核心設施服務計畫-交通大學( III ) 2011
11 半導體量子元件及奈米結構之高效能與節能應用( II ) 2011
12 台灣聯合大學系統奈米科技核心設施服務計畫---交通大學( II ) 2010
13 半導體量子元件及奈米結構之高效能與節能應用( I )
 2010
14 銻化合物半導體量子結構物理及元件應用 2010
15 銻化物基材之量子結構及元件
 2009
16 台灣聯合大學系統奈米科技核心設施服務計畫---交通大學( I ) 2009
17 奈米結構超物質之新穎特性研究(III)
 2009
18 台灣聯合大學系統奈米製作暨分析核心設施服務計畫(III)
 2008
19 奈米結構超物質之新穎特性研究(II) 2008
20 銻化物基材之量子結構及元件 2008
21 台灣聯合大學系統奈米製作暨分析核心設施服務計畫(II)
 2007
22 銻化物基材之量子結構及元件 2007
23 奈米結構超物質之新穎特性研究(I)
 2007
24 台灣聯合大學系統奈米製作暨分析核心設施服務計畫(I) 2006
25 異質接面電晶體的安全操作範圍研究(II) 2006
26 半導體量子環和其在自旋電子元件之應用(III) 2006
27 台灣聯合大學系統奈米製作暨分析核心設施中心(III)
 2005
28 半導體量子環和其在自旋電子元件之應用(II)
 2005
29 異質接面電晶體的安全操作範圍研究(I)
 2005
30 核心設施---台灣聯合大學系統奈米製作暨分析核心設施中心(II)
 2004
31 半導體量子環和其在自旋電子元件之應用(I)
 2004
32 基地台所需之高崩潰電壓異質介面電晶體研究(II)
 2004
33 半導體奈米結構的磁性與光學性質之研究(III)
 2004
34 半導體量子結構與量子元件前瞻性研究---子計畫I---半導體量子結構的成長、物理與元件應用(III) 2003
35 基地台所需之高崩潰電壓異質介面電晶體研究(I)
 2003
36 台灣聯合大學系統奈米製作暨分析核心設施中心(I)
 2003
37 半導體奈米結構的磁性與光學性質之研究(II)
 2003
38 半導體量子結構與量子元件前瞻性研究---總計畫(III)
 2003
39 半導體奈米結構的磁性與光學性質之研究(I)
 2002
40 半導體量子結構與量子元件前瞻性研究(II)---總計畫
 2002
41 半導體量子結構與量子元件前瞻性研究(II)---子計畫I:半導體量子結構的成長，物理與元件應用
 2002
42 異質介面電晶體之熱穩定性研究(II)
 2002
43 異質介面電晶體之熱穩定性研究(I) 2001
44 半導體量子結構與量子元件前瞻性研究---子計畫I:半導體量子結構的成長，物理與元件應用(I) 2001
45 半導體量子光電元件之研究(III)
 2001
46 半導體量子結構與量子元件前瞻性研究---總計畫(I) 2001
47 氫效應在異質接面電晶體所引起的穩定性及可靠性問題(II)
 2000
48 氫效應在異質接面電晶體所引起的穩定性及可靠性問題 2000
49 半導體量子光電元件之研究---中加合作案(II) 2000
50 三五族半導體量子點結構之物理與元件
 1999
51 近毫米波汽車防撞系統與元件之研發---高功率微波電晶體之研究(I)
 1999
52 毫米波高效率的固態元件陣列研究---總計畫(III) 1998
53 毫米波高效率的固態元件陣列研究---子計畫一：毫米波固態元件之研究(III) 1998
54 毫米波高效率的固態元件陣列研究---子計畫一：毫米波固態元件之研究 (II) 1997
55 三五族半導體量子光電元件研究 1997
56 毫米波高效率的固態元件陣列研究---總計畫(II) 1997
57 三五族半導體量子結構的物理研究及元件應用 1996
58 毫米波高效率的固態元件陣列研究---總計畫 1996
59 毫米波高效率的固態元件陣列研究---子計畫一：毫米波固態元件之研究 1996
60 III-V族半導體量子元件研究 1995
61 III-V族半導體高速及光電元件研究 1995
62 量子井紅外線偵測器(II) 1995
63 0.98微米波長砷化銦鎵扭曲量子井脊狀波導雷射研製 1994
64 量子井紅外線偵測器 1994

Proceedings Paper

序號
No.		 標題
Title		 著作日期
Date
1 Conducting polymer-based counter electrode for a quantum-dot-sensitized solar cell (QDSSC) with a polysulfide electrolyte
 2011-12-15
2 Temperature dependence of quantum efficiency in Quantum Dot Infrared Photodetectors
 2011-05-01
3 Spectral response and device performance tuning of long-wavelength InAs QDIPs
 2011-05-01
4 Microwave-induced DC currents in mesoscopic structures
 2010-02-01
5 Enhanced spectral response in polymer bulk heterojunction solar cells by using active materials with complementary spectra
 2010-01-01
6 Detection wavelength and device performance tuning of InAs QDIPs with thin AlGaAs layers
 2009-11-01
7 Confinement-enhanced dots-in-a-well QDIPs with operating temperature over 200 K
 2009-11-01
8 Ion beam studies of InAs/GaAs quantum dots after annealing
 2008-04-01
9 Type-I/type-II exciton in strained Si/SiGe multi-QWs
 2008-03-01
10 Edge magnetoplasma excitations in quantum wire arrays
 2008-03-01
11 Novel chirped multilayer quantum-dot lasers - art. no. 69970R
 2008-01-01
12 Experimental Observation of Inflection-Point Slow Light Modes in Photonic Crystal Coupled Waveguides 2007-01-01
13 Single Mode Operation of Integrated Photonic Crystal Nanocavity Coupled Surface Emitting Lasers 2007-01-01
14 Magneto-optics of layers of semiconductor quantum dots and nano-rings 2006-06-01
15 The strain status of the buried self-assembled InAs quantum dots using MeV technique 2006-01-01
16 Contaminations of MgO Thin Films by Phosphors for the Surface and Vertical Discharge Type AC-PDP 2006-01-01
17 The Effect of Oxygen Flow Rates on the Electrical Resistivity of MgO Thin Films in AC-PDPs 2006-01-01
18 Ion-channeling studies of InAs/GaAs quantum dots
 2005-12-01
19 Slow light in photonic crystals
 2005-03-01
20 Composition determination of semiconductor quantum wires by X-ray scattering
 2005-02-28
21 The relationship between density of MgO thin films and panel properties in AC-PDP 2005-01-01
22 Direct experimental evidence of the hole capture by resonant levels in boron doped silicon 2005-01-01
23 III-V semiconductor nano-rings
 2004-08-01
24 Performance of AlGaN/GaN heterostrucrure FETs over temperatures 2004-01-01
25 Magnetization and magnetic susceptibility of InAs nano-rings
 2004-01-01
26 InAs/GaAs quantum dot infrared photodetectors with different growth temperatures
 2003-10-01
27 Dependence of energy gap on magnetic field in semiconductor nano-scale quantum rings
 2003-06-10
28 Role of the spin-orbit interaction in elastic scattering of electrons in quantum wells
 2003-05-01
29 Spin-orbit interaction and all-semiconductor spintronics
 2003-04-01
30 Thermal stability of plasma-treated ohmic contacts to n-GaN
 2003-04-01
31 Structure effects on inter- and intra-band scattering of electrons in GaAs/AlxGa1-xAs and strained InxGa1-xAs/GaAs quantum wells
 2003-01-01
32 Calculation of induced electron states in three-dimensional semiconductor artificial molecules
 2002-08-01
33 Effect of shape and size on electron transition energies of InAs semiconductor quantum dots
 2002-04-01
34 Spin-dependent electron scattering from quantum dots and antidots in two-dimensional channels
 2002-01-01
35 Investigation of electron-optical phonon interactions in moderate wide InxGa1-xAs/GaAs strained quantum wells
 2001-12-01
36 A detailed study of non-uniform quantum well infrared photodetectors
 2001-06-01
37 High performance InAs/GaAs quantum dot infrared photodetectors with AlGaAs current blocking layer
 2001-06-01
38 Spin-orbit interaction and energy states in semiconductor quantum dots
 2001-05-01
39 Control the transverse mode of vertical cavity surface emitting lasers by anti-reflection coating
 2001-01-01
40 Molecular beam epitaxial growth and photoluminescence studies of InAs self-organized quantum dots on patterned GaAs (001) substrates 2001-01-01
41 A computational efficient method for HBT intermodulation distortions and two-tone characteristics simulation 2001-01-01
42 Hot-electron relaxation via optical phonon emissions in GaAs/AlxGa1-xAs quantum well structures: dependence upon the alloy composition and barrier width
 2000-12-01
43 Nonthermal carrier dynamics in AlxGa1-xAs/GaAs quantum wells
 2000-05-01
44 DLTS characterization of InAs self-assembled quantum dots
 2000-01-01
45 Ultrafast carrier-carrier scattering in AlxGa1-xAs/GaAs quantum wells
 1999-12-01
46 Photoluminescence study of high-quality InGaAs/GaAs quantum dots on (111)B GaAs substrates
 1999-01-01
47 Exciton relaxation in Ga1-xInxAs/GaAs self-organized quantum dots
 1999-01-01
48 Magneto-luminescence of quasi-zero dimensional In0.25Ga0.75As/GaAs quantum dots
 1998-12-01
49 A CPW-to-Slotline active gunn diode leaky wave antenna
 1998-01-01
50 Normal incident two color voltage tunable InGaAs quantum well infrared photodetectors 1998-01-01
51 Normal incident quantum well infrared photodetectors 1998-01-01
52 High quality quantum dots fabricated by molecular beam epitaxy
 1996-02-01
53 Light emission from the porous boron delta-doped Si superlattice
 1996-02-01
54 980 nm InGaAs/AlGaAs quantum well lasers with extremely low beam divergence 1996-01-01
55 Metal-organic chemical vapor deposition of tantalum nitride barrier layers for ULSI applications
 1995-12-01
56 EFFECTS OF LOW-TEMPERATURE-GROWN GAAS LAYER ON COMPOSITIONAL DISORDERING OF ALGAAS/GAAS SUPERLATTICES
 1995-02-01
57 COMPOSITION MODULATION OF INXGA1-XAS QUANTUM-WELLS BY FAST DIMER ARSENIC FLUX CHANGE USING VALVED ARSENIC CRACKER
 1994-01-01

Thesis

序號
No.		 標題
Title		 著作日期
Date
1 含有銻元素的半導體成長與其高電子遷移率電晶體之研究 2014
2 三五族半導體微米捲管耦合發光特性
 2014
3 摻雜不同維度奈米碳材之液晶的低頻介電特性 2013
4 利用光柵耦合的被動鎖模量子點雷射達成在1.3微米波段波長可調且低重複率的超短脈衝光源
 2013
5 砷化鎵與磷化銦遠紅外光譜與聲子能態密度之研究
 2013
6 深蝕刻布拉格反射鏡面之邊射型半導體Q開關雷射 2013
7 人格特質對個人與環境適配以及適配對工作績效表現之影響－以員工推薦為調節：以北部高科技產業為例 2013
8 被動式鎖模半導體量子點雷射之研究 2013
9 低溫強磁場橢偏儀之設計和量測及低能隙量子井厚度相關之電子傳輸有效質量和遷移率
 2013
10 磷化銦鎵/砷化鎵異質接面電晶體安全操作範圍之二維模擬 2013
11 利用W-type量子井在磷化銦基板上實現中紅外光電激發雷射及波長可調外腔式雷射 2013
12 具金屬光柵增強型之量子點紅外線偵測器 2013
13 無摻雜GaAs/AlGaAs量子井之橫向p-i-n二極體
 2013
14 本質區中的量子點對p-i-n太陽電池效率的影響 2012
15 三五族半導體微米捲管及其光電特性研究
 2012
16 自組式第一型量子環與第二型量子點之磁場光學研究
 2011
17 第二型砷化銦鎵/砷銻化鎵“W”量子井之光學特性及光激發中紅外線雷射之研究
 2011
18 深蝕刻布拉格反射鏡之邊射型微共振腔半導體雷射
 2011
19 砷化銦量子點及量子環在磁場下之光激發螢光光譜研究
 2011
20 台灣職校美容科專業產品之研究與分析 2011
21 銻化物高電子遷移率電晶體研究
 2010
22 利用光激發於結合光子晶體的類型二量子井之研究
 2009
23 二氧化矽薄膜所誘發之選擇性混合效應對砷化銦鎵量子井之影響
 2009
24 三五族半導體微米捲管及其光電與熱電效應研究
 2009
25 遠紅外線表面電漿子元件之研究
 2008
26 異常光學穿透現象於兆赫波段之研究
 2008
27 量子點紅外線偵測器及銻化鎵材料之研究
 2008
28 台灣IC封測業之SCP模型與分析
 2008
29 自組式砷化銦量子點/環及其紅外線偵測器之研究
 2008
30 自發捲曲微米管之製作與光學性質研究
 2007
31 在砷化鎵基板上成長應變之銻砷化鎵與其對表面砷化銦奈米結構的影響之研究
 2007
32 磷化銦基板上之線狀量子結構
 2007
33 量子點紅外線偵測器之研究
 2007
34 光子晶體波導內的慢光現象及整合型光子晶體面射型雷射之研究
 2006
35 砷化銦量子點之材料特性及雷射行為
 2006
36 多層調變量子點雷射之研究
 2006
37 光子晶體線缺陷波導整合邊射型雷射之慢光現象研究 2006
38 雙波長切換量子點雷射
 2006
39 雙載子異質接面電晶體的熱穩定最佳化設計
 2005
40 利用光子晶體微共振腔製作單模面射型雷射
 2005
41 量子點紅外線偵測器之研究
 2005
42 光子晶體線缺陷波導與邊射型雷射整合研究 2005
43 半導體量子點雷射之研究
 2004
44 光子晶體鏡面雷射之研究
 2004
45 氮化鎵異質結構場效電晶體之研究
 2004
46 光激砷化鎵中之全量子動力學
 2003
47 半導體量子線雷射之研究
 2003
48 光子晶體雷射之研究
 2003
49 量子點紅外線偵測器之研究
 2003
50 氮化鎵異質結構場效電晶體
 2003
51 規則化量子點晶格及半導體量子環之研究
 2003
52 半導體異質結構中電子自旋相依傳輸 2002
53 氮化鎵異質結構場效電晶體之研究 2002
54 量子點紅外線偵測器之研究 2002
55 變溫下異質接面雙載子電晶體模型之建立 2002
56 磷化銦鎵異質接面電晶體及高速電子遷移率電晶體之研究 2002
57 820nm反饋式半導體雷射與單一砷化銦量子點之研究 2001
58 量子點雷射之研究 2001
59 量子點紅外線偵測器之研究 2001
60 異質接面半導體致冷器上之應用 2001
61 金屬-半導體-金屬光偵測器及零維量子結構 2001
62 電漿表面處理對n型氮化鎵歐姆接觸之影響 2001
63 氮化鎵金屬-半導體-金屬光偵測器之研究 2001
64 使用有機金屬氣相磊晶法成長砷化鋁鎵及無鋁組成之垂直共振腔面射型雷射及單模面射型雷射之研製 2000
65 在(111)B砷化鎵基板上之砷化銦鎵/砷化鎵量子結構之研製及特性分析 2000
66 半導體量子結構雷射元件之研究 2000
67 利用深態能階暫態譜對於量子點的研究 2000
68 砷化銦/砷化鎵/砷化鋁鎵量子點雷射之研製 2000
69 量子點紅外線偵測器之研究 2000
70 量子點紅外線偵測器之研究 1999
71 Fabry-Perot型雷射二極體增益之量測 1999
72 非均勻量子井紅外線偵測器之研究 1999
73 單電子電晶體的製作與分析 1999
74 台電公司發電機組成本估算模式之解析--兼論向民間發電業購電之調度決策 1999
75 P-HEMT 在CDMA通訊系統上線性之製作與研究 1998
76 氫在HBT元件中所造成的穩定度問題之特性研究 1998
77 Broad Band Quantum Well Infrared Photodetectors 1998
78 量子井紅外線偵測器之光偶合效應研究 1998
79 量子井紅外線偵測器之研究 1998
80 磊晶薄膜移植技術應用於光電元件之研究 1997
81 以數值法及解析法進行共振型半導體元件之研究 1996
82 半導體量子井及超晶格中紅外線吸收光譜之理論研究 1996
83 以ELO技術移植InGaAs/GaAs/AlGaAs雷射二極體於矽基板上之特性研究 1996
84 大面積雷射光束線叢的研究 1996
85 ELO技術在砷化鎵系列光調變器的應用 1996
86 反射式量子井光調變器之研究 1996
87 The Signaling Effect on the Issuance of the Convertible Bond from the Perspective of the Expected time to Conversion 1996
88 金屬及砷化鎵相關化合物熱反應研究 1996
89 砷化鎵與矽基板之金屬接合技術研究及其在半導體雷射上的應用 1995
90 砷化鋁鎵/砷化鎵異質接面結構雙極性電晶體之研究 1995
91 ASTUDY OF THE AlGaAs╱GaAs HETEROJUNCTION BIPOLAR TRANSISTORS 1995
92 量子井雷射之研究 1995
93 半導體量子井雷射元件及材料之研究 1994
94 3-5um及8-12um量子井紅外線偵測器 1994
95 砷化鎵金半場效電晶體電路旁閘效應之數值研究 1993
96 多孔矽與多孔矽/鍺合金的發光研究 1993
97 砷化鋁鎵/砷化鎵的異質接面電晶體之研究 1993
98 以分子束磊晶方法研究砷化鎵/砷化鋁鎵異質接面雙載子電晶體 1993
99 以分子束磊晶方法研究低維量子效應光電元件與結構 1993
100 多孔矽與多孔矽/鍺合金的發光研究 1993
101 量子井紅外線偵測器之研究 1993
102 砷化鎵金半場效電晶體電路旁閘效應之數值研究 1992
103 砷化鎵/砷化鋁鎵分子束磊晶成長及其在多重量子井紅外線偵測器之應用 1991
104 由分子束磊晶技術成長三五族化合物半導體之原子層摻雜結構的特性量測與分析 1991
105 砷化鎵金半場效電晶體上異常現象之二維數值研究 1990
106 雙障壁共振穿透結構之物理及元件運作之研究 1990
107 砷化鎵/砷化鋁鎵量子井雷射之研製 1989
108 分子束磊晶成長之砷化鎵金半場效電晶體低溫緩衝層及頻率相關電流超射效應之研究 1989
109 表面處理與退火處理對LEC CaAs深能階特性之研究 1989
110 高電子遷移率電晶體之製造及其特性 1989
111 砷化鋁鎵/砷化鎵埋層異質雷射於半絕緣基板之研究 1989
112 單模雷射陣列 1989
113 波長0.98微米之砷化鎵銦╱砷化鎵╱砷化鎵鋁扭曲層單量子井雷射研製 1989
114 銦鎵砷磷四元化合物液相磊晶及其應用於埋層凸脊式二極體 1989
115 矽化鉭在砷化鋁鎵上蕭特基接觸之研究 1988
116 砷化鎵/ 砷化鋁鎵半導體雷射陣列之研製 1988
117 金屬矽化物對砷化物對砷化鎵蕭特基接觸之研究 1988
118 砷化鎵/ 砷化鋁鎵雷射掃描器研製 1988
119 N 型砷化鎵歐姆接觸的研究 1988
120 高功率半導體雷射陣列 1988
121 鎢的矽化物及鉬的矽化物對砷化鎵之蕭特基接觸 1988
122 高功率半導體雷射陣列 1988
123 砷化鎵金屬半場效電晶體二維數值分析 1987
電機學院