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陳衛國

陳衛國 Chen, Wei-Kuo

電子郵件／E-mail：wkchen@cc.nctu.edu.tw

服務單位／Department：理學院 ／ 電子物理學系

著作期間／Publish Period：1991 - 2014-03-10

著作統計／Statistics

Article（73）
Digital Courses（1）
Others（2）
Patents（8）
Plan（37）
Proceedings Paper（13）
Thesis（64）

Article

序號
No.		 標題
Title		 著作日期
Date
1 Optical properties associated with strain relaxations in thick InGaN epitaxial films
 2014-03-10
2 Recombination dynamics and carrier lifetimes in highly mismatched ZnTeO alloys
 2013-12-23
3 Growth of optical-quality, uniform In-rich InGaN films using two-heater metal-organic chemical vapor deposition
 2013-11-15
4 Influence of Mg-containing precursor flow rate on the structural, electrical and mechanical properties of Mg-doped GaN thin films
 2012-10-15
5 Temperature-dependent decay dynamics in highly mismatched ZnSe1-xTex alloy
 2012-02-13
6 Exploring the dynamics of reaction N(D-2) + C2H4 with crossed molecular-beam experiments and quantum-chemical calculations
 2011-01-01
7 Exploring the dynamics of reaction N((2)D) + C(2)H(4) with crossed molecular-beam experiments and quantum-chemical calculations 2011-01-01
8 Cathodoluminescence studies of GaAs nano-wires grown on shallow-trench-patterned Si
 2010-11-19
9 Growth and optical properties of high-density InN nanodots
 2010-10-15
10 Carrier dynamics in isoelectronic ZnSe(1-x)O(x) semiconductors 2010-07-26
11 Recombination lifetimes in InN films studied by time-resolved excitation-correlation spectroscopy 2009-11-01
12 Effect of donor-acceptor concentration ratios on nonradiative energy transfer in closely packed CdTe quantum dots
 2009-09-28
13 The structural and optical properties of InN nanodots grown with various V/III ratios by metal-organic chemical vapor deposition
 2009-07-22
14 Optical Properties of Uncapped InN Nanodots Grown at Various Temperatures
 2009-03-01
15 Size-dependent strain relaxation in InN islands grown on GaN by metalorganic chemical vapor deposition
 2009-02-09
16 Time-resolved photoluminescence of isoelectronic traps in ZnSe(1-x)Te(x) semiconductor alloys 2008-12-15
17 Pressure-induced metallization and resonant Raman scattering in Zn(1-x)Mn(x)Te
 2008-07-01
18 Effects of growth temperature on InN/GaN nanodots grown by metal organic chemical vapor deposition
 2008-05-15
19 Raman scattering of longitudinal-optical-phonon-plasmon coupling in Cl-doped ZnSe under high pressure
 2007-12-15
20 Structural and optical properties of In-rich InGaN nanodots grown by metallo-organic chemical vapor deposition
 2007-10-10
21 Effect of ZnSe partial capping on the ripening dynamics of CdSe quantum dots
 2007-02-19
22 Impacts of ammonia background flows on structural and photoluminescence properties of InN dots grown on GaN by flow-rate modulation epitaxy
 2006-12-25
23 Current properties of GaNV-defect using conductive atomic force microscopy
 2006-08-01
24 Growth mode transfer of self-assembled CdSe quantum dots grown by molecular beam epitaxy
 2006-01-15
25 Advanced electrical imaging of dislocations in Mg-In-codoped GaN films
 2006-01-01
26 Photoluminescence studies of In-doped GaN : Mg films
 2005-10-01
27 Optical properties of self-assembled ZnTe quantum dots grown by molecular-beam epitaxy
 2005-02-01
28 Microphotoluminescence spectra of hillocks in Al0.11Ga0.89N films
 2004-10-11
29 Near-field optical microscopy and scanning Kelvin microscopy studies of V-defects on AlGaN/GaN films
 2004-10-04
30 Optical properties of Zn1-xCdxSe epilayers grown on (100)GaAs by molecular beam epitaxy
 2004-08-01
31 Formation of self-organized GaN dots on Al0.11Ga0.89N by alternating supply of source precursors
 2004-06-15
32 Spatially-resolved photoluminescence studies of V-shaped pits on Al0.16Ga0.84N
 2004-02-15
33 Growth temperature reduction for isoelectronic As-doped GaN
 2003-03-01
34 Characteristics of p-type GaN films doped with isoelectronic indium atoms
 2002-12-01
35 Rapid thermal annealing effects on blue luminescence of As-implanted GaN
 2002-10-01
36 Characteristics of deep levels in As-implanted GaN films
 2002-09-02
37 Dependence of deep level concentrations on ammonia flow rate in n-type GaN films
 2002-08-01
38 Photoluminescence and photoluminescence excitation studies of as-grown and P-implanted GaN: On the nature of yellow luminescence
 2002-05-06
39 Thermal stability study of Ni/Ta n-GaN Schottky contacts
 2002-01-28
40 Long-term photocapacitance decay behavior in undoped GaN
 2001-10-01
41 Electrical properties of the free-standing diamond film at high voltages
 2001-05-01
42 Luminescence intensity reduction in Mg-doped GaN grown by metalorganic chemical vapor phase epitaxy
 2001-04-01
43 Effects of thermal annealing on Ni/Ta/n-GaN Schottky diodes
 2001-03-15
44 Gallium K-edge x-ray absorption study on Mg-doped GaN
 2001-01-01
45 Structure study of GaN : Mg films by X-ray absorption near-edge structure spectroscopy
 2001-01-01
46 Randomization enhanced Chaum's blind signature scheme
 2000-11-01
47 Isoelectronic As doping effects on the optical characteristics of GaN films grown by metalorganic chemical-vapor deposition
 2000-10-30
48 Study of linear and nonlinear optical properties of distorted Ti-O-6 perovskite structure in BaxSr1-xTiO3
 2000-06-01
49 Time-resolved photoluminescence study of isoelectronic In-doped GaN films grown by metalorganic vapor-phase epitaxy
 2000-05-29
50 Date attachable electronic cash
 2000-02-15
51 Optical and electrical investigations of isoelectronic In-doped GaN films
 2000-01-01
52 A high-temperature thermodynamic model for metalorganic vapor phase epitaxial growth of InGaN
 1999-09-01
53 Isoelectronic In-doping effect in GaN films grown by metalorganic chemical vapor deposition 1999-08-03
54 Influence of sapphire nitridation on properties of indium nitride prepared by metalorganic vapor phase epitaxy
 1999-02-01
55 Raman and x-ray studies of InN films grown by metalorganic vapor phase epitaxy 1998-11-02
56 Raman and X-ray studies of InN films grown at different temperatures by metalorganic vapor phase epitaxy
 1998-09-01
57 Isoelectronic In-doping effect in GaN films grown by metalorganic chemical vapor deposition 1998-08-03
58 An elucidation of solid incorporation of InGaN grown by metalorganic vapor phase epitaxy
 1998-06-01
59 Phonon-plasmon interaction in GaN films studied by Raman scattering 1998-02-01
60 Photoluminescence studies of GaN films of different buffer layer and doping concentration
 1998-02-01
61 Raman scattering in ternary AlAsxSb1-x films
 1998-01-01
62 Growth and X-ray characterization of an InN film on sapphire prepared by metalorganic vapor phase epitaxy 1997-12-15
63 Negative differential resistance in InGaAs/AlAsSb/InGaAs single-barrier heterostructure 1997-09-08
64 Properties of highly resistive and nonstoichiometric GaAs film grown by low-temperature metalorganic chemical vapor deposition using tertiarybutylarsine
 1997-06-01
65 Crystalline structure changes in GaN films grown at different temperatures
 1997-05-15
66 Effects of growth temperature on solid incorporation of AlAs1-xSbx using tertiarybutylarsine as arsenic source precursor 1996-10-01
67 Deep level transient spectroscopy depth profile measurements of polycrystalline zinc oxide ceramic 1996-09-15
68 Structural and electrical properties of GaSb, AlGaSb and their heterostructures grown on GaAs by metalorganic chemical vapor deposition
 1996-03-01
69 Influence of As/Al and Sb/Al gas flow ratios on growth of AlAs1-xSbx alloys 1995-12-01
70 INFLUENCE OF THERMODYNAMIC FACTORS ON GROWTH OF ALAS1-XSBX ALLOYS 1994-10-01
71 LOW-TEMPERATURE EPITAXY OF GAAS BY METALORGANIC CHEMICAL-VAPOR-DEPOSITION 1994-08-01
72 ORGANOMETALLIC VAPOR-PHASE EPITAXIAL-GROWTH OF ALASXSB1-X FILMS USING TERTIARYBUTYLARSINE
 1994-03-15
73 EFFECTS OF HYDROGENATION ON ELECTRICAL-PROPERTIES OF INP GROWN ON GAAS BY THE PHOTOCHEMICAL VAPOR-DEPOSITION SYSTEM 1993-01-01

Digital Courses

序號
No.		 標題
Title		 著作日期
Date
1 半導體物理及元件
 2006

Others

序號
No.		 標題
Title		 著作日期
Date
1 Formation of self-assembled ZnTe quantum dots on ZnSe buffer layer grown on GaAs substrate by molecular beam epitaxy
 2002-07-01
2 EFFECT OF HYDROGENATION ON DEEP-LEVEL TRAPS IN INP ON GAAS 1992-01-01

Patents

序號
No.		 標題
Title		 著作日期
Date
1 反應器、化學氣相沈積反應器以及有機金屬化學氣相沈積反應器
 2011-07-01
2 Nanoparticle structure and manufacturing process of multi-wavelength light emitting devices
 2009-11-12
3 多波長發光元件之奈米粒結構及其製法
 2007-12-11
4 Nanoparticle structure and manufacturing process of multi-wavelength light emitting device
 2007-05-17
5 多波長發光元件之奈米粒結構及其製法
 2007-05-16
6 製作自行聚合奈米粒之方法
 2006-02-16
7 Process for manufacturing self-assembled nanoparticles
 2006-02-09
8 製作自行聚合奈米粒之方法
 2005-08-01

Plan

序號
No.		 標題
Title		 著作日期
Date
1 雙加熱MOCVD系統開發長波長氮化物發光二極體磊晶技術 (II) 2014
2 高In組成之InGaN量子結構光電物理行為之研究 2013
3 雙加熱MOCVD系統開發長波長氮化物發光二極體磊晶技術 (I) 2013
4 大面積次微米圖案藍寶石基板製作與磊晶技術開發 2012
5 高In組成之InGaN量子結構光電物理行為之研究 2012
6 高In組成之InGaN量子結構光電物理行為之研究 2011
7 國立交通大學貴重儀器使用中心服務計畫
 2011
8 全域組成氮化銦鎵化合物之磊晶成長與光電特性研究 2010
9 國立交通大學貴重儀器使用中心服務計畫 2010
10 國立交通大學貴重儀器使用中心服務計畫
 2009
11 Structural and Physical Properties of Inxga1-Xn Ternaries with 0 2009
12 氮化銦及高銦組成氮化鎵銦量子點及相關異質微結構之光電物理行為研究 2008
13 國立交通大學貴重儀器使用中心服務計畫
 2008
14 國立交通大學貴重儀器使用中心服務計畫
 2007
15 氮化銦及高銦組成氮化鎵銦量子點及相關異質微結構之光電物理行為研究 2007
16 氮化銦及高銦組成氮化鎵銦量子點及相關異質微結構之光電物理行為研究 2006
17 微結構之顯微電性量測(III)
 2005
18 微結構之顯微電性量測(II)
 2004
19 微結構之顯微電性量測(I)
 2003
20 等價位氮化物元件結構製備與相關物理特性研究(II)
 2002
21 等價位氮化物元件結構製備與相關物理特性研究(I)
 2001
22 氮化鎵族光電材料與元件之研發---子計畫一：氮化物藍光波段元件結構磊晶研究
 2000
23 氮銦化鎵/氮化鎵量子井及量子點結構製備及光電物理性質研究
 2000
24 氮化鎵族光電材料與元件之研發---子計畫I：氮化物藍光波段元件結構磊晶研究(II)
 2000
25 氮化銦鎵和氮砷化鎵三元化合物薄膜製備及光電物理性質研究
 2000
26 三五族氮化物半導體薄膜之物理特性研究---子計畫II：GaN類半導體材料及物理結構之薄膜製備與特性研究(III)
 1999
27 藍光半導體雷射立方體氮化鎵材料之製備與研究
 1998
28 三五族氮化合物半導體薄膜之物理特性研究---子計畫二：GaN類半導體材料及物理結構之薄膜製備與物理特性之研究(II)
 1998
29 斷能隙N型GaAsb/P型InAs異質結構載子傳輸效應之研究 1997
30 AlAsSb單能障結構穿隧電流之負電阻效應研究 1996
31 三五族氮化合物半導體薄膜之物理特性---子計畫二：GaN類半導體材料及物理結構之光性研究(I) 1996
32 遠紅外線帶通濾光器研製 1996
33 銻砷化鋁混合晶體拉曼光譜研究 1995
34 磷化銦高能隙材料能障研究 1995
35 AlAsSb/InGaAs/AlAsSb共振穿隧二極體穿隧電流之研究 1994
36 磷化銦系列含銻化合物薄膜磊晶研究 1993
37 磷化銦面射型雷射相關問題研究 1993

Proceedings Paper

序號
No.		 標題
Title		 著作日期
Date
1 Optical characterization of isoelectronic ZnSe(1-x)O(x) semiconductors 2011-05-15
2 Magneto-optical properties of ZnMnTe/ZnSe quantum dots
 2011-05-15
3 Structural and optical properties of indium-rich InGaN islands
 2008-01-01
4 Structural and optical properties of InN/GaN nanodots grown by metalorganic chemical vapor deposition
 2008-01-01
5 Successive current-voltage measurements of a thick isolated diamond film
 2001-11-01
6 Metastable photoluminescence in heavily Mg-doped GaN grown by metalorganic chemical vapor phase epitaxy
 2000-01-01
7 Gallium K-edge EXAFS study of GaN : Mg films
 2000-01-01
8 Characteristics of optical properties of the interrupt growth method on InGaN/GaN MQW structures 2000-01-01
9 Long-term photocapacitance decay behavior in undoped GaN 2000-01-01
10 Effects in carrier dynamics of Isolectronic In doped in GaN films grown by metalorganic vapor phase epitaxy 2000-01-01
11 The electronic structure and optical properties of phosphorus implanted GaN films 2000-01-01
12 The effects of isoelectronic in-doping in GaN films grown by MOCVD 1998-01-01
13 Composition control in the growth of AlAs1-xSbx alloys 1995-01-01

Thesis

序號
No.		 標題
Title		 著作日期
Date
1 利用氮化矽插入層成長低差排密度氮化鎵磊晶層及物理特性之研究
 2013
2 雙加熱金屬氣相沈積系統成長氮化鎵磊晶機制與特性研究 2013
3 三族氮化物薄膜與奈米點磊晶機制之研究 2013
4 雙加熱MOCVD系統成長氮化銦鎵薄膜之磊晶機制研究 2013
5 利用雙加熱式有機金屬化學氣相磊晶系統成長高銦氮化銦鎵薄膜與其物理特性研究 2012
6 機電工程公司採購發包作法之探討 2011
7 流量調制磊晶技術成長氮化銦的形貌與光性研究 2011
8 雙加熱器有機金屬化學氣相沉積系統上、下加熱板溫度對氮化銦鎵薄膜成長之研究
 2011
9 低溫氮化鎵薄膜磊晶與物理特性之研究
 2011
10 利用雙加熱有機金屬化學氣相沉積系統成長低史托克位移氮化銦鎵薄膜之研究
 2011
11 全域組成氮化銦鎵薄膜之磊晶成長與光學特性分析
 2009
12 自組式有機金屬汽相磊晶系統(MOCVD) LabVIEW自動控制程式設計和低溫氮化鎵磊晶成長及其光電特性研究
 2009
13 高銦氮化銦鎵薄膜之成長與特性
 2009
14 由有機金屬化學氣相沈積成長不同中斷時間對生成氮化銦奈米粒的影響研究
 2007
15 調變五三比對成長氮化銦奈米點之研究
 2007
16 三族氮化物微結構之成長與光電特性量測
 2007
17 由有機金屬化學氣相沈積成長不同長晶溫度之氮化銦奈米點的光學與形貌特性研究
 2006
18 氮化銦奈米粒之成長與特性分析
 2006
19 III族氮化物奈米粒成長與光學特性研究
 2005
20 氮化物薄膜掺雜效應之特性研究
 2004
21 掃描式電場力顯微術於氮化鎵島狀結構之研究
 2004
22 掃描式探針顯微術於氮化鎵薄膜表面微結構之電性研究
 2003
23 氮化鎵薄膜的結構缺陷及表面能態特性研究
 2003
24 氮化鎵薄膜表面能態密度分佈之研究
 2003
25 氮化鎵相關材料之磊晶成長與特性分析 2002
26 砷離子佈植氮化鎵薄膜之深植能階研究 2001
27 同電子性銦摻雜對P型氮化鎵薄膜之影響 2001
28 氮化銦及氮化鎵之磊晶成長與特性分析 2000
29 氮化銦鎵-氮化鎵之多層量子井藍光發光二極體之電容量測 2000
30 以X光吸收細微結構研究熱退火對鎂摻雜氮化鎵化合物的影響 2000
31 P型氮化鎵金/鉭/金歐姆接觸特性研究 2000
32 有機金屬氣相磊晶成長氮化鋁鎵之特性研究 2000
33 砷離子佈植氮化鎵薄膜之深植能階研究 2000
34 N型氮化鎵蕭基二極體之熱退火效應研究 1999
35 鎂摻雜氮化鎵化合物薄膜之X光吸收細微結構研究 1999
36 同電子性銦及鎵摻雜氮化鎵薄膜之時間解析光譜研究 1999
37 鎂摻雜氮化鎵薄膜離子佈植鈹之特性研究 1999
38 氮化鎵材料製程研究--p型氮化鎵歐姆接觸與准分子雷射蝕刻 1999
39 寬能隙銻化物與氮化物之磊晶成長、特性分析與元件研製 1998
40 Using N2+ Implantation into Poly-Si/a-Si Films to Improve the Thermal Stability of Cobalt Silicide 1998
41 銦摻雜氮化鎵薄膜之深植能階研究 1998
42 矽摻雜氮化鎵薄膜之特性研究 1998
43 P型氮化鎵薄膜之熱處理效應研究 1998
44 有機金屬氣相磊晶法成長砷化金因/砷化鎵薄膜 1997
45 氮化鎵之電性研究 1997
46 氮化銦鎵有機金屬化學氣相沉積法熱力學磊晶模型分析 1997
47 砷銻化鋁化合物的成長及其異質結構和遠紅外線帶通濾波器的研究 1996
48 InGaAs/AlAsSb/InGaAs 單能障結構穿隧電流之研究 1996
49 整合影像處理與無線傳輸功能的VR系統 1995
50 以有機金屬氣相磊晶法成長銻化銦/砷化鎵薄膜 1995
51 銻化鋁及砷銻化鋁成長研究 1995
52 銻化鋁及砷銻化鋁成長研究 1995
53 有機金屬氣相磊晶法低溫成長砷化鎵及砷銻化鋁之熱力學分析 1994
54 以AlAsSb材料改善InP蕭基能障高之研究 1994
55 低溫砷化鎵的冷激光光譜分析及砷銻化鋁的拉曼研究 1994
56 有機金屬氣相磊晶法低溫砷化鎵的變溫霍爾量測及深能階暫態能譜量測 1994
57 有機金屬氣相磊晶法成長砷化銦鎵和砷銻化鋁薄膜 1993
58 一個改進的 Playfair 密碼法 1992
59 有機金屬氣相磊晶法成長砷銻化鋁/磷化銦薄膜 1992
60 OMVPE成長GaAsSb薄膜及GaAsSb/AlAsSb布拉格反射鏡之製作 1992
61 TEGa, TBAs氣相成長GaAs薄膜反應機制之研究 1991
62 砷化鎵/矽異質薄膜磊晶成長 1991
63 一致性二維數值模擬砷化鎵場效電晶體高濃度雜質攙入效應 1991
64 TEGa, TBAs氣相成長GaAs薄膜反應機制之研究 1991
理學院