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陳振芳

陳振芳 Chen, Jenn-Fang

電子郵件／E-mail：jfchen@cc.nctu.edu.tw

服務單位／Department：理學院 ／ 電子物理學系

著作期間／Publish Period：1980 - 2014-05-01

著作統計／Statistics

Article（104）
Digital Courses（2）
Others（1）
Patents（3）
Plan（26）
Proceedings Paper（15）
Thesis（86）

Article

序號
No.		 標題
Title		 著作日期
Date
1 Dark current suppression of amorphous selenium based photosensors by the ZnO hole blocking layer
 2014-05-01
2 Hole Injection and Electron Overflow Improvement in 365 nm Light-Emitting Diodes by Band-Engineering Electron Blocking Layer
 2013-08-01
3 Exploration of water jet generated by Q-switched laser induced water breakdown with different depths beneath a flat free surface
 2013-01-14
4 Effects of cross-sectional area on the tunneling-junction array in octahedral PbSe colloidal-nanocrystal solids
 2013-01-01
5 Enhancing threshold voltage of AlGaN/GaN high electron mobility transistors by nano rod structure: From depletion mode to enhancement mode
 2012-09-10
6 "Dielectrophoretic placement of quasi-zero-, one-, and two-dimensional nanomaterials into nanogap for electrical characterizations" 2012-08-01
7 Optical Simulation and Fabrication of Near-Ultraviolet LEDs on a Roughened Backside GaN Substrate
 2012-03-15
8 Electron Emission Properties of GaAsN/GaAs Quantum Well Containing N-Related Localized States: The Influence of Illuminance
 2012-02-01
9 How do InAs quantum dots relax when the InAs growth thickness exceeds the dislocation-induced critical thickness?
 2012-01-01
10 Optical joint density of states in InGaN/GaN-based multiple-quantum-well light-emitting diodes
 2011-11-15
11 Role of the N-related localized states in the electron emission properties of a GaAsN quantum well
 2011-11-15
12 Electron Emission Properties of Nitrogen-Induced Localized Defects in InAsN/GaAs Quantum Dots
 2011-11-01
13 Study of InGaN-Based Light-Emitting Diodes on a Roughened Backside GaN Substrate by a Chemical Wet-Etching Process
 2011-10-01
14 Improving the photoluminescence properties of self-assembled InAs surface quantum dots by incorporation of antimony
 2011-08-15
15 Effect of AlInGaN barrier layers with various TMGa flows on optoelectronic characteristics of near UV light-emitting diodes grown by atmospheric pressure metalorganic vapor phase epitaxy
 2011-08-01
16 Reduction of Efficiency Droop in InGaN Light-Emitting Diode Grown on Self-Separated Freestanding GaN Substrates
 2011-06-15
17 The effect of trimethylgallium flows in the AIInGaN barrier on optoelectronic characteristics of near ultraviolet light-emitting diodes grown by atmospheric pressure metalorganic vapor phase epitaxy
 2011-03-21
18 Tunable erbium-doped fiber ring laser with signal-averaging function for fiber-optic sensing applications
 2011-01-01
19 Compensation effect and differential capacitance analysis of electronic energy band structure in relaxed InAs quantum dots
 2010-09-15
20 Bimodel onset strain relaxation in InAs quantum dots with an InGaAs capping layer
 2010-08-30
21 Study of electric characteristics and diffusion effects of 2-methyl-9,10-di(2-naphthyl)anthracene doped with cesium fluoride by admittance spectroscopy
 2010-03-29
22 Photoluminescence studies of InAs/GaAs quantum dots covered by InGaAs layers
 2010-01-15
23 Spectral shape and broadening of emission from AlGaInP light-emitting diodes
 2009-10-01
24 Structural and optical properties of buried InAs/GaAs quantum dots on GaAsSb buffer layer
 2009-09-21
25 Study of electrical characterization of 2-methyl-9, 10-di(2-naphthyl)anthracene doped with tungsten oxide as hole-transport layer
 2009-07-20
26 Influence of thermal annealing on the electron emission of InAs quantum dots containing a misfit defect state
 2009-03-15
27 Study of efficient and stable organic light-emitting diodes with 2-methyl-9,10-di(2-naphthyl)anthracene as hole-transport material by admittance spectroscopy
 2009-01-12
28 Electron emissions in InAs quantum dots containing a nitrogen incorporation induced defect state: the influence of thermal annealing
 2008-12-10
29 Electrical Properties of Metal-Silicon Nitride-Hydrogenated Amorphous Silicon Capacitor Elucidated Using Admittance Spectroscopy
 2008-12-01
30 Strain relaxation in InAs self-assembled quantum dots induced by a high N incorporation
 2008-11-15
31 Electrical characterization of organic light-emitting diodes using dipotassium phthalate as n-type dopant
 2008-08-25
32 Effect of antimony incorporation on the density, shape, and luminescence of InAs quantum dots
 2008-07-15
33 Investigations on highly stable thermal characteristics of a dilute In(0.2)Ga(0.8)AsSb/GaAs doped-channel field-effect transistor
 2008-04-01
34 Relaxation-induced lattice misfits and their effects on the emission properties of InAs quantum dots
 2007-09-05
35 Wire-like characteristics in stacked InAs/GaAs quantum dot superlattices for optoelectronic devices
 2007-09-01
36 Electron emission properties of relaxation-induced traps in InAs/GaAs quantum dots and the effect of electronic band structure
 2007-08-15
37 Deep-level emissions in GaAsN/GaAs structures grown by metal organic chemical vapor deposition
 2007-06-15
38 Evidence for the electron trap state associated with N-rich clusters in InGaAsN/GaAs quantum wells
 2007-06-13
39 A novel dilute antimony channel In0.2Ga0.8AsSb/GaAs HEMT
 2007-02-01
40 Analysis of strain relaxation in GaAs/InGaAs/GaAs structures by spectroscopy of relaxation-induced states
 2007-02-01
41 Highly power efficient organic light-emitting diodes with a p-doping layer
 2006-12-18
42 The photoluminescence decay time of self-assembled InAs quantum dots covered by InGaAs layers
 2006-12-14
43 Comparative study of single and multiemissive layers in inverted white organic light-emitting devices
 2006-09-11
44 Study of hole concentration of 1,4-bis[N-(1-naphthyl)-N-'-phenylamino]-4,4(') diamine doped with tungsten oxide by admittance spectroscopy
 2006-09-04
45 Stable inverted bottom-emitting organic electroluminescent devices with molecular doping and morphology improvement
 2006-07-31
46 Highly efficient and stable inverted bottom-emission organic light emitting devices
 2006-07-31
47 Evolution of carrier distribution and defects in InGaAsN/GaAs quantum wells with composition fluctuation
 2006-07-01
48 Effect of growth rate on the composition fluctuation of InGaAsN/GaAs single quantum wells
 2006-06-15
49 Strain relaxation and induced defects in InAsSb self-assembled quantum dots
 2006-06-05
50 Ultrathin electron injection layer on indium-tin oxide bottom cathode for highly efficient inverted organic. light-emitting diodes
 2006-06-01
51 Evolution of conduction and interface states of laterally wet-oxidized AlGaAs with oxidation time
 2006-01-15
52 Effect of incorporating an InAlAs layer on electron emission in self-assembled InAs quantum dots
 2006-01-01
53 Highly efficient white organic electroluminescent devices based on tandem architecture
 2005-12-19
54 N incorporation into InGaAs cap layer in InAs self-assembled quantum dots
 2005-12-01
55 Continuous-wave high-power (320 mW) single mode operation of electronic vertically coupled InAs/GaAs quantum dot narrow-ridge-waveguide lasers
 2005-12-01
56 Ab initio molecular orbital study of 1,3,5-triazine derivatives for phosphorescent organic light emitting devices
 2005-10-24
57 Strain relaxation in InAs/InGaAs quantum dots investigated by photoluminescence and capacitance-voltage profiling
 2005-10-03
58 Thickness dependence of current conduction and carrier distribution of GaAsN grown on GaAs
 2005-10-01
59 Effect of nitrogen incorporation into InAs layer in InAs/InGaAs self-assembled quantum dots
 2005-09-01
60 Characterization of electron emission from relaxed InAs quantum dots capped with InGaAs
 2005-07-01
61 Characterization of self-assembled InAs quantum dots with InAlAs/InGaAs strain-reduced layers by photoluminescence spectroscopy
 2005-04-15
62 Characterization of electronic structure of aluminum (III) bis(2-methyl-8-quninolinato)-4-phenylphenolate (BAlq) for phosphorescent organic light emitting devices
 2005-03-07
63 Single mode 1.3 mu m InGaAsN/GaAs quantum well vertical cavity surface emitting lasers grown by molecular beam epitaxy
 2004-12-01
64 Molecular-beam-epitaxy growth of high-quality InGaAsN/GaAs quantum well lasers emitting at 1.3 mu m
 2004-11-01
65 Properties of defect traps in triple-stack InAs/GaAs quantum dots and effect of annealing
 2004-09-15
66 High-efficiency organic electroluminescent device with multiple emitting units
 2004-09-01
67 High nitrogen content InGaAsN/GaAs single quantum well for 1.55 mu m applications grown by molecular beam epitaxy
 2004-02-15
68 Effects of causality and joint conditions on method of reverberation-ray matrix 2003-06-01
69 Annealing temperature dependence of electric conduction and capacitance dispersion in nitrogen-implanted GaAs
 2001-05-01
70 Differential capacitance measurements of relaxation-induced defects in InGaAs/GaAs Schottky diodes
 2001-02-01
71 Carrier distribution and relaxation-induced defects of InAs/GaAs quantum dots
 2000-11-06
72 Effect of growth temperature on the electric properties of In0.12Ga0.88As/GaAs p-i-n multiple-quantum-well diodes
 2000-06-01
73 Annealing dynamics of nitrogen-implanted GaAs films investigated by current-voltage and deep-level transient spectroscopy
 2000-04-17
74 Voltage and frequency dependence of differential capacitance in relaxed In0.2Ga0.8As/GaAs Schottky diodes
 2000-03-01
75 Strain relaxation in In0.2Ga0.8As/GaAs quantum-well structures by x-ray diffraction and photoluminescence
 2000-02-01
76 Carrier depletion by defects levels in relaxed In0.2Ga0.8As/GaAs quantum-well Schottky diodes
 2000-02-01
77 Admittance spectroscopy and thermal stimulation current for band-offset characteristics in AlAs/GaAs n(+)-p structures
 2000-01-01
78 Capacitance dispersion in n-LT-i-p GaAs structures with the low-temperature layers grown at different temperatures
 1999-12-01
79 Electrical reliability issues of integrating thin Ta and TaN barriers with Cu and low-K dielectric
 1999-11-01
80 Observation of a dominant EL2-like mid-gap trap in In0.12Ga0.88As/GaAs superlattice grown at low temperature by molecular beam epitaxy
 1999-11-01
81 Observation of carrier depletion and emission effects on capacitance dispersion in relaxed In0.2Ga0.8As/GaAs quantum wells
 1999-10-18
82 Observation of abnormal capacitance-frequency behavior in In0.12Ga0.88As/GaAs p-i-n superlattice grown at low temperature
 1999-08-23
83 Transition of carrier distribution from a strained to relaxed state in InGaAs/GaAs quantum well
 1999-03-01
84 Effects of high-resistivity, low-temperature layer in transient capacitance measurements of GaAs n-i-p structures
 1998-10-15
85 Low frequency negative capacitance behavior of molecular beam epitaxial GaAs n-low temperature-i-p structure with low temperature layer grown at a low temperature 1998-03-02
86 Role of 0.66 eV dominant trap in annealed low-temperature grown molecular beam epitaxial GaAs 1998-02-01
87 Electrical characteristics and deep-level admittance spectroscopies of low-temperature grown GaAs p-i-n structures 1997-02-01
88 Deep levels, electrical and optical characteristics in SnTe-doped GaSb Schottky diodes 1996-11-01
89 Characterizations of deep levels in SnTe-doped GaSb by admittance spectroscopy 1996-09-23
90 Analysis of influence of alkyl sources on deep levels in GaN by transient capacitance method
 1996-07-01
91 Deep levels in SnTe-doped GaSb grown on GaAs by molecular beam epitaxy
 1996-07-01
92 Temperature-dependent transport properties of n(+) GaAs/low-temperature GaAs/n(+) GaAs structures grown by molecular beam epitaxy 1996-06-01
93 Structural and electrical properties of GaSb, AlGaSb and their heterostructures grown on GaAs by metalorganic chemical vapor deposition
 1996-03-01
94 ELECTRICAL-PROPERTIES OF UNDOPED AND SNTE-DOPED GAXIN1-XSB MOLECULAR-BEAM-EPITAXIALLY GROWN ON GAAS
 1995-01-01
95 INVESTIGATION OF NEGATIVE DIFFERENTIAL RESISTANCE PHENOMENA IN GASB/ALSB/INAS/GASB/ALSB/INAS STRUCTURES
 1994-10-01
96 SUPPRESSION OF THE BORON PENETRATION INDUCED SI/SIO2 INTERFACE DEGRADATION BY USING A STACKED-AMORPHOUS-SILICON FILM AS THE GATE STRUCTURE FOR PMOSFET
 1994-05-01
97 ELECTRICAL AND MICROSTRUCTURAL CHARACTERISTICS OF TI CONTACTS ON (001)SI 1993-08-15
98 MOLECULAR-BEAM EPITAXY GROWTH OF INAS-ALSB-GASB INTERBAND TUNNELING DIODES 1993-03-01
99 SCHOTTKY-BARRIER HEIGHTS OF THE AMORPHOUS INTERLAYER SI INTERFACES IN TITANIUM THIN-FILMS ON (001)SI 1992-11-02
100 INTERBAND TUNNELING BETWEEN VALENCE-BAND AND CONDUCTION-BAND QUANTUM-WELLS IN A GASB/ALSB/INAS/ALSB/GASB/ALSB/INAS TRIPLE-BARRIER STRUCTURE 1992-08-01
101 THE EFFECTS OF GASB/INAS BROKEN GAP ON INTERBAND TUNNELING CURRENT OF A GASB/INAS/GASB/ALSB/INAS TUNNELING STRUCTURE 1992-05-01
102 EFFECTS OF SB4/GA RATIOS ON THE ELECTRICAL-PROPERTIES OF GASB SCHOTTKY DIODES 1992-03-15
103 TEMPERATURE COEFFICIENTS OF THE OPEN-CIRCUIT VOLTAGE OF P-N-JUNCTION SOLAR-CELLS 1982-01-01
104 DOPING AND TEMPERATURE DEPENDENCES OF MINORITY-CARRIER DIFFUSION LENGTH AND LIFETIME DEDUCED FROM THE SPECTRAL RESPONSE MEASUREMENTS OF P-N-JUNCTION SOLAR-CELLS 1982-01-01

Digital Courses

序號
No.		 標題
Title		 著作日期
Date
1 電子學（三）
 2014
2 電子學（一）（二）
 2008

Others

序號
No.		 標題
Title		 著作日期
Date
1 Nonpolar a-plane GaN grown on r-plane sapphire using multilayer AlN buffer by metalorganic chemical vapor deposition
 2011-01-15

Patents

序號
No.		 標題
Title		 著作日期
Date
1 具有非極性三族-氮化物層的多層結構及其製法
 2012-12-21
2 具有非極性三族－氮化物層的多層結構及其製法
 2010-08-16
3 MANUFACTURE METHOD OF MULTILAYER STRUCTURE HAVING NON-POLAR A-PLANE III-NITRIDE LAYER
 2010-08-05

Plan

序號
No.		 標題
Title		 著作日期
Date
1 深層能階的載子補捉對於光學引發砷化銦量子點內電荷儲存之影響 2014
2 雙模態砷化銦量子點間載子傳輸機制與應力鬆弛發生雙模態之探討 2013
3 雙模態砷化銦量子點間載子傳輸機制與應力鬆弛發生雙模態之探討 2012
4 雙模態砷化銦量子點間載子傳輸機制與應力鬆弛發生雙模態之探討 2011
5 砷化銦自聚式量子點內點缺陷與電子量子能階之交互作用
 2010
6 砷化銦自聚式量子點內點缺陷與電子量子能階之交互作用
 2009
7 改善基礎研究設施- --X-ray繞射儀
 2009
8 砷化銦自聚式量子點內點缺陷與電子量子能階之交互作用
 2008
9 砷化銦自聚式量子點內應力鬆弛效應與材料交互混合產生的電性缺陷的影響(III)
 2007
10 砷化銦自聚式量子點內應力鬆弛效應與材料交互混合產生的電性缺陷的影響(II) 2006
11 砷化銦自聚式量子點內應力鬆弛效應與材料交互混合產生的電性缺陷的影響(I)
 2005
12 砷化鎵氮/砷化鎵 量子井在應變與鬆弛狀態下的電性研究(III)
 2004
13 砷化鎵氮/砷化鎵量子井在應變與鬆弛狀態下的電性研究(II)
 2003
14 砷化鎵氮/砷化鎵量子井在應變與鬆弛狀態下的電性研究(I)
 2002
15 砷化銦鎵與砷化鎵量子點應變鬆弛的特性研究
 2001
16 量子點的電荷分佈與放射率的電性物理研究
 2000
17 砷沈積在低溫砷化鎵中的電性物理研究 2000
18 低溫分子束成長砷化鎵負電容研究及交互式光調制反光譜技術及應用
 1999
19 三五族氮化合物半導體薄膜之物理特性研究---子計畫III：三五族氮化合物半導體物理特性以及電性量測分析與研究
 1999
20 低溫分子束成長砷化鎵/砷化鋁鎵半導體－絕緣體－半導體的傳輸機制研究 1997
21 三五族氮化合物半導體薄膜之物理特性研究---子計畫三：三五族氮化合物半導體薄膜之物理特性之研究(I) 1996
22 共振穿隧效應量子井光雙穩態的特性研究 1996
23 分子束磊晶在多重量子井的自偶光電效應元件的應用 1996
24 分子束磊晶氮化合物與藍色光源的研究 1995
25 銻化鋁鎵/銻化鎵/銻化鋁鎵電流傳輸機制的特性 1995
26 斷帶能隙能帶間穿隧物理及元件(I) 1994

Proceedings Paper

序號
No.		 標題
Title		 著作日期
Date
1 Photoluminescence Study of Interdot Carrier Transfer on Strain-relaxed InAs Quantum Dots 2011-01-01
2 Stable and Efficient Organic Light Emitting Diodes Based on a Single Host of p-doped and n-doped Layers 2009-01-01
3 Analysis of InAsN quantum dots by transmission electron microscopy and photoluminescence
 2008-10-01
4 Efficient electron injection in organic light-emitting diodes using dipotassium phthalate as n-type dopant 2008-01-01
5 Highly stable thermal characteristics of a novel In0.3Ga0.7As0.99N0.01 (Sb)/GaAs high-electron-mobility transistor
 2007-04-01
6 Study the electrical properties of non-crystalline semiconductor by admittance spectroscopy 2007-01-01
7 Electrical characterization of bathophenanthroline doped with dipotassium phthalate 2007-01-01
8 Demonstration of slow light via population oscillation in quantum dot VCSEL 2007-01-01
9 Admittance spectroscopy of the electric properties of 1,4-bis[N-(1-naphthyl)-N '-phenylamino]-4,4 ' diamine doped with tungsten oxide 2006-01-01
10 High-Efficiency Inverted Transparent Blue Organic Light-Emitting Devices 2006-01-01
11 High-performance 30-period quantum-dot infrared photodetector
 2005-05-01
12 Stilbene-based materials for blue organic light emitting devices 2005-01-01
13 Ab initio molecular orbital calculation of 1,3,5-triazine derivatives as hosts for phosphorescent organic light emitting devices 2005-01-01
14 Using tunneling junction to enhance hole-injection in organic light-emitting diodes 2005-01-01
15 INTERFACIAL REACTIONS OF TITANIUM THIN-FILMS ON ION-IMPLANTED (001) SI 1993-04-01

Thesis

序號
No.		 標題
Title		 著作日期
Date
1 利用穿隧效應以及時間解析量測估算應力鬆弛後InAs量子點之等效電容值 2014
2 GaAsN/GaAs量子井結構中光激發載子暫存降引致光電流抑制效應：等效電路RC時間常數分析 2013
3 光激發載子於GaAsN/GaAs量子井 電滯曲線的影響 2013
4 建立電路模型探討InAs量子點累積過量電子對蕭基二極體電性之影響 2013
5 (In)GaAsN/GaAs量子井中N相關之局部侷限能階的形成機制與電性量測分析 2012
6 以矽基板開發常關型氮化鎵高電子移動率電晶體 2012
7 深層能階對覆蓋InAlAs層之InAs量子點的光電容特性分析
 2012
8 深層能階缺陷對光激發載子於GaAsN/GaAs量子井結構中的影響
 2012
9 藉由光電容研究深層缺陷能階與砷化銦量子點之載子交互作用
 2012
10 缺陷能階與量子點之載子躍遷光電容產生機制
 2012
11 氮化銦鎵/氮化鎵量子井聯合能態密度的變化及V型結構對元件特性的影響
 2011
12 EL2 缺陷對於InAs/GaAs 量子點的電子放射特性分析:照光的影響
 2011
13 T25高壓製程之高頻特性研究測試元件 2011
14 InAs/InGaAs量子點光電容特性
 2011
15 GaAsN/GaAs量子井結構中光激發載子的光電容與光電流分析
 2011
16 分子束磊晶成長InAs/InGaAs 量子點之銻表面活化效應 2010
17 氮化矽層內嵌奈米矽晶體之SONOS型記憶體的缺陷分析與電子傳輸機制研究 2010
18 應力誘發之雙模態InAs/InGaAs量子點特性 2010
19 含氮局部侷限能階之GaAsN/GaAs量子井的電子放射特性:照光的影響 2010
20 The Influence of Nitrogen Composition Fluctuation on InAs Self-assembled Quantum Dots with Incorporation of A High Nitrogen Content 2010
21 網路平台企業成長之探討-以Google為例 2009
22 應力鬆弛對InAs/InGaAs量子點特性之影響
 2009
23 氮化矽層內嵌奈米矽晶體之SONOS型記憶體的分析
 2009
24 熱退火對InAsN/InGaAs量子點結構電子放射之影響
 2009
25 InGaAs(N)/GaAs多層量子井的電光性研究
 2009
26 CMOS 奈米元件閃爍雜訊與RTS之特性分析
 2009
27 氮化矽層內嵌奈米矽晶體之SONOS型記憶體的分析
 2008
28 InAs量子點中缺陷效應影響之量子躍遷機制
 2008
29 InAs量子點掺入氮之電子放射與捕獲機制研究
 2008
30 氮化鎵缺陷能階為0.5 eV的電性研究
 2008
31 以溶液製程製備小分子電子傳輸層達成多層結構之有機高分子發光元件與樹枝狀磷光發光材料之研究
 2008
32 有機摻雜半導體與非晶矽半導體之導納分析模型建立與電性研究
 2008
33 應力鬆弛引發之缺陷效應下的InAs/InGaAs量子躍遷機制
 2007
34 InAsSb量子點表面活化及相分離現象以及熱退火影響InAsSb量子點光性電性
 2007
35 氮離子佈植InAs量子點特性研究
 2007
36 有機半導體材料電子結構分析與倒置式下發光有機電激發光元件之研究
 2006
37 熱退火對掺入氮砷化銦量子點電子放射率之影響
 2006
38 熱退火於InAsSb/GaAs量子點光性及應力鬆弛引致缺陷之載子傳輸特性研究
 2006
39 MOCVD成長GaAsN/GaAs量子井的深層缺陷能階與能帶研究
 2006
40 InAs量子點應力鬆弛所引發缺陷對量子躍遷之影響
 2006
41 InGaAsN/GaAs量子井之成份波動效應
 2005
42 分子束磊晶成長InAs/InGaAs量子點之銻表面活化效應
 2005
43 高效率有機電激發光元件之研究
 2005
44 分子束磊晶法於砷化鎵基板製作1.3微米半導體雷射
 2005
45 Alq3與BAlq之電流傳輸分析與不同濃度WO3摻雜入NPB之電性影響
 2004
46 InAs/GaAs自聚式量子點掺入銻與氮之特性研究
 2004
47 InAsSb/GaAs自聚式量子點之電性研究
 2004
48 自聚式InAs量子點上覆蓋In0.14AlAs / In0.14GaAs複合層之研究
 2003
49 砷化銦量子點上覆蓋不同材料之電性研究
 2003
50 砷化銦/砷化銦鎵量子點中砷化銦厚度對缺陷的電子放射與捕捉影響之研究
 2003
51 氮含量與砷化銦厚度對砷化銦/砷化鎵量子點光性影響 2002
52 濕氧化砷化鎵鋁之金氧半電容器其電性傳導與介面能態分析 2002
53 砷化銦/砷化銦鎵Dots in Well量子點結構之電性研究 2002
54 掺雜不同氮含量的InAs/InGaAs量子點與不同長晶速率的InGaAsN單一量子井之電性研究 2002
55 鋯鈦酸鉛鐵電電容器之可靠度研究 2001
56 氮砷化鎵塊材與氮砷化鎵/砷化鎵單一量子井電性與光性的研究 2000
57 熱退火處理之砷化銦/砷化鎵量子點光性研究 2000
58 InAs/GaAs量子點電容-電壓和深層能階暫態頻譜之電性研究 2000
59 熱退火處理之氮離子佈植砷化鎵的缺陷特性 1999
60 InGaAs/GaAs量子點與GaAsN/GaAs量子井的電性與光性研究 1999
61 InGaAs/GaAs 量子井結構中晶格應變造成之缺陷能階電性分析 1998
62 氮離子佈值於砷化鎵之特性研究 1998
63 砷化銦鎵/砷化鎵量子井應力層之電性及結構分析 1998
64 氮離子佈植於砷化鎵之特性研究 1998
65 晶格應變對單子量子井結構中載子分佈的影響 1997
66 分子束磊晶低溫成長砷化鎵電性量測分析 1997
67 GaAs/AlAs/GaAs量子結構的導納頻譜分析 1996
68 MBE成長低溫InGaAs/GaAs超晶格p-i-n結構之電性與缺陷量測分析 1996
69 MBE成長低溫砷化鎵之電性與缺陷分析 1995
70 SnTe摻雜GaSb與低溫成長InGaAs/GaAs超晶格之電性研究與缺陷分析 1995
71 氮化鎵二極體電性與缺陷分析 1995
72 熱電子之量子益得與GaSb/AlSb/InAs電晶體之研究 1994
73 MBE低溫成長砷化鎵之電流傳輸機制研究與陽極氧化成長氧化膜之方法 1994
74 低溫鑽石薄膜之電性與金屬/鑽石薄膜之熱穩定性研究 1994
75 鑽石薄膜的區域選擇沈積與在場效發射矩陣上的應用及大面積化 1994
76 摻磷鑽石膜之合成與特性研究 1994
77 氮氣對於鑽石膜成長的影響 1994
78 熱電子之量子益得與GASB/ALSB/INAS電晶體之研究 1994
79 以MOCVD成長GaSb,AlGaSb與量測GaSb/AlGaSb/GaSb之電流傳輸 1993
80 摻雜SnTe之GaSb/GaAs薄膜電､光特性之研究 1992
81 第二型斷帶能隙異質接合結構中基於緊束縛漢彌爾頓之帶間電子傳遞 1992
82 Diamond deposition and effect of adding hydrogen in C□H□-CO□ mixture by MPCVD 1991
83 利用微波電漿化學氣相沈積法以C2H2-CO2及CH4-CO2氣體系成長鑽石 1990
84 折衷權重多準則評估法 1988
85 以化學蒸鍍法在燒結碳化物刀具表面被覆氮化鈦薄膜之研究 1982
86 PN接面太陽電池參數的計測方法 1980
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