國立交通大學機構典藏：研究人員|電子工程學系及電子研究所|荊鳳德

荊鳳德 Chin, Albert

電子郵件／E-mail：achin@cc.nctu.edu.tw

服務單位／Department：電機學院／電子工程學系及電子研究所

著作期間／Publish Period：1970-01-01 - 2014-06-01

著作統計／Statistics

Article（188）

Patents（4）

Plan（46）

Proceedings Paper（58）

Thesis（88）

Article

序號 No.	標題 Title	著作日期 Date
1	Performance comparison of titanium-oxide resistive switching memories using GeOx and AlOx capping layers for flexible application	2014-06-01
2	Low-Voltage Steep Turn-On pMOSFET Using Ferroelectric High-kappa Gate Dielectric	2014-02-01
3	Low-Leakage-Current DRAM-Like Memory Using a One-Transistor Ferroelectric MOSFET With a Hf-Based Gate Dielectric	2014-01-01
4	Evolution of the conductivity type in germania by varying the stoichiometry	2013-12-02
5	Gate-first n-MOSFET with a sub-0.6-nm EOT gate stack	2013-09-01
6	Nano-crystallized titanium oxide resistive memory with uniform switching and long endurance	2013-04-01
7	Evaluation of Temperature Stability of Trilayer Resistive Memories Using Work-Function Tuning	2013-04-01
8	Achieving low sub-0.6-nm EOT in gate-first n-MOSFET with TiLaO/CeO2 gate stack	2013-04-01
9	Ni/GeOx/TiOy/TaN RRAM on Flexible Substrate With Excellent Resistance Distribution	2013-04-01
10	Metal-Gate/High-kappa/Ge nMOS at Small CET With Higher Mobility Than SiO2/Si at Wide Range Carrier Densities	2013-02-01
11	Improved current distribution in resistive memory on flexible substrate using nitrogen-rich TaN electrode	2012-12-10
12	Design of a CMOS T/R Switch With High Power Capability: Using Asymmetric Transistors	2012-12-01
13	Ohmic contact on n-type Ge using Yb-germanide	2012-11-26
14	A Dual-Resonant Mode 10/22-GHz VCO With a Novel Inductive Switching Approach	2012-07-01
15	Highly uniform low-power resistive memory using nitrogen-doped tantalum pentoxide	2012-07-01
16	Mechanism of GeO2 resistive switching based on the multi-phonon assisted tunneling between traps	2012-06-11
17	A Bias-Varied Low-Power K-band VCO in 90 nm CMOS Technology	2012-06-01
18	High-Performance GaN MOSFET With High-k LaAlO(3)/SiO(2) Gate Dielectric	2012-01-01
19	High-Performance Charge-Trapping Flash Memory Device With an Ultrathin 2.5-nm Equivalent-Si(3)N(4)-Thickness Trapping Layer	2012-01-01
20	Long-Endurance Nanocrystal TiO(2) Resistive Memory Using a TaON Buffer Layer	2011-12-01
21	Unipolar Ni/GeOx/PbZr0.5Ti0.5O3/TaN Resistive Switching Memory	2011-12-01
22	Bipolar conductivity in amorphous HfO(2)	2011-08-15
23	Bipolar switching characteristics of low-power Geo resistive memory	2011-08-01
24	Higher Gate Capacitance Ge n-MOSFETs Using Laser Annealing	2011-04-01
25	Ultralow Switching Energy Ni/GeO(x)/HfON/TaN RRAM	2011-03-01
26	Arsenic-Implanted HfON Charge-Trapping Flash Memory With Large Memory Window and Good Retention	2011-03-01
27	Low-Power High-Performance Non-Volatile Memory on a Flexible Substrate with Excellent Endurance	2011-02-15
28	Stacked GeO/SrTiO(x) Resistive Memory with Ultralow Resistance Currents	2011-01-31
29	High-field mobility metal-gate/high-kappa Ge n-MOSFETs with small equivalent-oxide-thickness	2011-01-01
30	High-Performance Gate-First Epitaxial Ge n-MOSFETs on Si With LaAlO(3) Gate Dielectrics	2010-12-01
31	Highly scaled charge-trapping layer of ZrON nonvolatile memory device with good retention	2010-11-22
32	Gate-First TaN/La(2)O(3)/SiO(2)/Ge n-MOSFETs Using Laser Annealing	2010-11-01
33	Ultralow-Power Ni/GeO/STO/TaN Resistive Switching Memory	2010-09-01
34	A Low-Power K-Band CMOS VCO With Four-Coil Transformer Feedback	2010-08-01
35	Low-Voltage-Driven Flexible InGaZnO Thin-Film Transistor With Small Subthreshold Swing	2010-07-01
36	Improved Capacitance Density and Reliability of High-k Ni/ZrO(2)/TiN MIM Capacitors Using Laser-Annealing Technique	2010-07-01
37	Higher-kappa titanium dioxide incorporating LaAlO(3) as dielectrics for MIM capacitors	2010-06-01
38	Design of Dual-Passband Microstrip Bandpass Filters With Multi-Spurious Suppression	2010-04-01
39	A Nonvolatile InGaZnO Charge-Trapping-Engineered Flash Memory With Good Retention Characteristics	2010-03-01
40	The Role of High-kappa TiHfO Gate Dielectric in Sputtered ZnO Thin-Film Transistors	2010-01-01
41	High Performance of Ge nMOSFETs Using SiO(2) Interfacial Layer and TiLaO Gate Dielectric	2010-01-01
42	Lanthanide-Oxides Mixed TiO(2) Dielectrics for High-kappa MIM Capacitors	2010-01-01
43	High-kappa TiCeO MIM Capacitors with a Dual-Plasma Interface Treatment	2010-01-01
44	A Study on Frequency-Dependent Voltage Nonlinearity of SrTiO(3) rf Capacitor	2010-01-01
45	Characteristics of Cerium Oxide for Metal-Insulator-Metal Capacitors	2010-01-01
46	A Low Operating Voltage ZnO Thin Film Transistor Using a High-kappa HfLaO Gate Dielectric	2010-01-01
47	Radio Frequency Power Performance Enhancement for Asymmetric Lightly Doped Drain Metal-Oxide-Semiconductor Field-Effect Transistors on SiC Substrate	2010-01-01
48	Improved Radio Frequency Power Characteristics of Complementary Metal-Oxide-Semiconductor-Compatible Asymmetric-Lightly-Doped-Drain Metal-Oxide-Semiconductor Transistor	2010-01-01
49	Higher kappa Metal-Gate/High-kappa/Ge n-MOSFETs with < 1 nm EOT Using Laser Annealing	2010-01-01
50	Highly-Scaled 3.6-nm ENT Trapping Layer MONOS Device with Good Retention and Endurance	2010-01-01
51	Improved Stress Reliability of Analog Metal-Insulator-Metal Capacitors Using TiO(2)/ZrO(2) Dielectrics	2009-12-01
52	High-Performance InGaZnO Thin-Film Transistors Using HfLaO Gate Dielectric	2009-12-01
53	Interfacial layer dependence on device property of high-kappa TiLaO Ge/Si N-type metal-oxide-semiconductor capacitors at small equivalent-oxide thickness	2009-11-23
54	Low-Threshold-Voltage TaN/LaTiO n-MOSFETs With Small EOT	2009-09-01
55	Low-Threshold-Voltage MoN/HfAlO/SiON p-MOSFETs With 0.85-nm EOT	2009-08-01
56	Effect of Ta(2)O(5) Doping on Electrical Characteristics of SrTiO(3) Metal-Insulator-Metal Capacitors	2009-08-01
57	High-Density and Low-Leakage-Current MIM Capacitor Using Stacked TiO(2)/ZrO(2) Insulators	2009-07-01
58	Low-Threshold-Voltage TaN/Ir/LaTiO p-MOSFETs Incorporating Low-Temperature-Formed Shallow Junctions	2009-06-01
59	Small-Subthreshold-Swing and Low-Voltage Flexible Organic Thin-Film Transistors Which Use HfLaO as the Gate Dielectric	2009-02-01
60	Low-V(t) TaN/HfLaO n-MOSFETs Using Low-Temperature Formed Source-Drain Junctions	2009-01-01
61	Crucial integration of high work-function metal gate and high-k blocking oxide on charge-trapping type flash memory device	2008-12-22
62	A flexible organic pentacene nonvolatile memory based on high-kappa dielectric layers	2008-12-08
63	Improved RF Power Performance in a 0.18-mu m MOSFET Which Uses an Asymmetric Drain Design	2008-12-01
64	Improvement of the performance of TiHfO MIM capacitors by using a dual plasma treatment of the lower electrode	2008-10-01
65	Improving the retention and endurance characteristics of charge-trapping memory by using double quantum barriers	2008-07-01
66	Comparison of MONOS memory device integrity when using Hf(1-x-y)N(x)O(y) trapping layers with different N compositions	2008-06-01
67	New test structure to monitor contact-to-poly leakage in sub-90 nm CMOS technologies	2008-05-01
68	Low subthreshold swing HfLaO/pentacene organic thin-film transistors	2008-03-01
69	High-Performance MIM Capacitors Using a High-kappa TiZrO Dielectric	2008-01-01
70	Low V-t gate-first Al/TaN/[Ir3Si-HfSi2-x]/HfLaON CMOS using simple laser annealing/reflection	2008-01-01
71	HtLaON n-MOSFETs using a low work function HfSix gate	2007-12-01
72	Improved high-temperature leakage in high-density MIM capacitors by using a TiLaO dielectric and an Ir electrode	2007-12-01
73	Work function tunability of refractory metal nitrides by lanthanum or aluminum doping for advanced CMOS devices	2007-11-01
74	Improved stress reliability of analog TiHfO metal-insulator-metal capacitors using high-work-function electrode	2007-11-01
75	A program-erasable high-k Hf0.3N0.2O0.5 MIS capacitor with good retention	2007-10-01
76	Use of a high-work-function ni electrode to improve the stress reliability of Analog SrTiO3 metal-insulator-metal capacitors	2007-08-01
77	RF power performance of asymmetric-LDD MOS transistor for RF-CMOS SOC design	2007-06-01
78	High-temperature stable HfLaON p-MOSFETs with high-work-function Ir3Si gate	2007-04-01
79	Calibration 90 nm node RF mosfets, including stress degradation	2007-03-01
80	High-temperature leakage improvement in metal-insulator-metal capacitors by work-function tuning	2007-03-01
81	High-temperature stable IrxSi gates with high work function on HfSiON p-MOSFETs	2007-02-01
82	Very low V(t) [Ir-Hf]/HfLaO CMOS using novel self-aligned low temperature shallow junctions	2007-01-01
83	Thermal leakage improvement by using a high-work-function ni electrode in high-kappa TiHfO metal-insulator-metal capacitors	2007-01-01
84	Very high density (44 fF/mu m(2)) SrTiO3 MIM capacitors for RF applications	2007-01-01
85	Leakage current improvement of Ni/TiNiO/TaN metal-insulator-metal capacitors using optimized N+ plasma treatment and oxygen annealing	2007-01-01
86	Electric stress effect on DC-RF performance degradation of 0.18-mu m mosfets	2006-10-01
87	High-performance SrTiO3 MIM capacitors for analog applications	2006-09-01
88	HfSiON n-MOSFETs using low-work function HfSi chi gate	2006-09-01
89	RFIC TaN/SrTio(3)/TaN MIM capacitors with 35 fF/mu m(2) capacitance density	2006-09-01
90	Strain enhanced DC-RF performance of 0.13 mu m nMOSFETs on flexible plastic substrate	2006-07-06
91	HfAlON n-MOSFETs incorporating low-work function gate using ytterbium silicide	2006-06-01
92	Electrical-stress effects and device modeling of 0.18-mu m RF MOSFETs	2006-04-01
93	Study of parallel coupled-line microstrip filter in broadband	2006-02-01
94	High work function IrxSi gates on HfAlON p-MOSFETs	2006-02-01
95	Comparison of MiM performance with various electrodes and dieletric in Cu dual damascene of CMOS MS/RF technology	2006-01-01
96	A quantum trap MONOS memory device using AlN	2006-01-01
97	A parallel coupled-line filter using VLSI backend interconnect with high resistivity substrate	2006-01-01
98	Very low noise RIF nMOSFETs on plastic by substrate thinning and wafer transfer	2005-11-01
99	Very high-density (23 fF/mu m(2)) RF MIM capacitors using high-k TaTiO as the dielectric	2005-10-01
100	Broad-spectrum light emission at microscopic breakdown sites in metal-insulator-silicon tunnel diodes	2005-09-01
101	A fully planar microstrip coupled-line coupler with a high coupling level	2005-07-20
102	Formation of dual-phase HfO2-HfxSi1-xO2 dielectric and its application in memory devices	2005-07-01
103	Low noise RF MOSFETs on flexible plastic substrates	2005-07-01
104	High-kappa Ir/TiTaO/TaN capacitors suitable for analog IC applications	2005-07-01
105	High-performance poly-silicon TFTs incorporating LaAlO3 as the gate dielectric	2005-06-01
106	The effect of IrO2-IrO2-Hf-LaAlO3 gate dielectric on the bias-temperature instability of 3-d GOI CMOSFETs	2005-06-01
107	A novel program-erasable high-(K) A1N-Si MIS capacitor	2005-03-01
108	Three-dimensional metal gate-high-kappa-GOI CMOSFETs on 1-poly-6-metal 0.18-mu m Si devices	2005-02-01
109	Germanium pMOSFETs with Schottky-barrier germanide S/D, high-kappa gate dielectric and metal gate	2005-02-01
110	The potential of functional scaling	2005-01-01
111	Bias-temperature instability on fully silicided-germanided gates/high-k Al2O3CMOSFETs	2005-01-01
112	Reducing AC power consumption by three-dimensional integration of Ge-on-insulator CMOS on 1-poly-6-metal 0.18 mu m Si MOSFETs	2005-01-01
113	Low voltage lead titanate/Si one-transistor ferroelectric memory with good device characteristics	2004-11-15
114	Alternative surface passivation on germanium for metal-oxide-semiconductor applications with high-k gate dielectric	2004-11-01
115	High-performance bulk and thin-film microstrip transmission lines on VLSI-standard Si substrates	2004-10-20
116	Electrical characteristics and suppressed boron penetration behavior of thermally stable HfTaO gate dielectrics with polycrystalline-silicon gate	2004-10-04
117	High performance CPW and microstrip ring resonators on silicon substrates	2004-09-20
118	Electron mobility in Ge and strained-Si channel ultrathin-body metal-oxide semi conductor field-effect transistors	2004-09-20
119	A TaN-HfO2-Ge pMOSFET with novel SiH4 surface passivation	2004-09-01
120	N-type Schottky barrier source/drain MOSFET using ytterbium silicide	2004-08-01
121	RF, DC, and reliability characteristics of ALD HfO2-Al2O3 laminate MIM capacitors for Si RF IC applications	2004-06-01
122	Effect of surface NH3 anneal on the physical and electrical properties of HfO2 films on Ge substrate	2004-05-10
123	Schottky-barrier S/D MOSFETs with high-K gate dielectrics and metal-gate electrode	2004-05-01
124	Al2O3-Ge-On-insulator n- and p-MOSFETs with fully NiSi and NiGe dual gates	2004-03-01
125	Light emission near 1.3 mu m using ITO-Al2O3-Si0.3Ge0.7-Si tunnel diodes	2004-01-01
126	High-density RF MIM capacitors using high-k La2O3 dielectrics	2004-01-01
127	Device level characterization for energy bandgap of strain-relaxed SiGe and oxide/SiGe barrier height	2004-01-01
128	The copper contamination effect of Al2O3 gate dielectric on Si	2004-01-01
129	High-performance MIM capacitor using ALD high-k HfO2-Al2O3 laminate dielectrics	2003-12-01
130	Fully silicided NiSi and germanided NiGe dual gates on SiO2 n- and p-MOSFETs	2003-12-01
131	Integrated antennas on Si with over 100 GHz performance, fabricated using an optimized proton implantation process	2003-11-01
132	Very high density RF MIM capacitors (17 fF/mu m(2) using high-kappa Al2O3 doped Ta2O5 dielectrics	2003-10-01
133	High-performance microwave coplanar bandpass and bandstop filters on Si substrates	2003-09-01
134	Lanthanide (Tb)-doped HfO2 for high-density MIM capacitors	2003-07-01
135	PVD HfO2 for high-precision MIM capacitor applications	2003-06-01
136	High-density MIM canpacitors using AlTaOx dielectrics	2003-05-01
137	Fully silicided NiSi gate on La2O3 MOSFETs	2003-05-01
138	Effect of Zr/Ti ratios on characterization of Pb(ZrxTi1-x)O-3 thin films on Al2O3 buffered Si for one-transistor memory applications	2003-03-01
139	Electrical and structural characteristics of PbTiO3 thin films with ultra-thin Al2O3 buffer layers	2003-02-17
140	A high-density MIM capacitor (13 fF/mu m(2)) using ALD HfO2 dielectrics	2003-02-01
141	La2O3/Si0.3Ge0.7 p-MOSFETs with high hole mobility and good device characteristics	2002-12-01
142	RF noise in 0.18-mu m and 0.13-mu m MOSFETs	2002-12-01
143	40-GHz coplanar waveguide bandpass filters on silicon substrate	2002-11-01
144	Formation of Ni germano-silicide on single crystalline Si0.3Ge0.7/Si	2002-08-01
145	Poly-Si thin-film transistors crystallized by electron-beam annealing	2002-07-01
146	RF noise characteristics of high-k AlTiOx and Al2O3 gate dielectrics	2002-07-01
147	Investigation of inductively coupled plasma gate oxide on low temperature polycrystalline-silicon TFTs	2002-06-01
148	Bi3.25La0.75Ti3O12 thin films on ultrathin Al2O3 buffered Si for ferroelectric memory application	2002-04-29
149	High-density MIM capacitors using Al2O3 and AlTiOx dielectrics	2002-04-01
150	Frequency-dependent capacitance reduction in high-k AlTiOx and Al2O3 gate dielectrics from IF to RF frequency range	2002-04-01
151	Effect of annealing temperature on physical and electrical properties of Bi3.25La0.75Ti3O12 thin films on Al2O3-buffered Si	2002-03-18
152	Characterization of Si/SiGe heterostructures on Si formed by solid phase reaction	2002-03-01
153	Characteristics of Pb(Zr0.53Ti0.47)O-3 on metal and Al2O3/Si substrates	2001-11-01
154	Cu contamination effect in oxynitride gate dielectrics	2001-11-01
155	Effects of excimer laser dopant activation on low temperature polysilicon thin-film transistors with lightly doped drains	2001-11-01
156	Stack gate PZT/Al2O3 one transistor ferroelectric memory	2001-07-01
157	The strong degradation of 30 angstrom gate oxide integrity contaminated by copper	2001-04-01
158	The effect of copper on gate oxide integrity	2000-11-01
159	Fabrication of very high resistivity Si with low loss and cross talk	2000-09-01
160	Electrical characteristics of high quality La2O3 gate dielectric with equivalent oxide thickness of 5 angstrom	2000-07-01
161	High temperature formed SiGeP-MOSFET's with good device characteristics	2000-07-01
162	The buried oxide properties in oxygen plasma-enhanced low-temperature wafer bonding	2000-07-01
163	Thickness dependent gate oxide quality of thin thermal oxide grown on high temperature formed SiGe	2000-06-01
164	High-quality thermal oxide grown on high-temperature-formed SiGe	2000-05-01
165	Gate oxide integrity of thermal oxide grown on high temperature formed Si0.3Ge0.7	2000-03-01
166	Improved electrical characteristics of CoSi2 using HF-vapor pretreatment	1999-07-01
167	The leakage current effect of thin gate oxides (2.4-2.7 nm) with in situ native oxide desorption	1999-06-01
168	Improved electrical characteristics of CoSi2 using HF-vapor pretreatment	1999-05-01
169	The effect of native oxide on epitaxial SiGe from deposited amorphous Ge on Si	1999-01-25
170	The effect of native oxide on thin gate oxide integrity	1998-11-01
171	Thin oxides with in situ native oxide removal	1997-09-01
172	Ultrathin N2O-oxide with atomically flat interfaces	1997-05-01
173	In0.52Al0.48As/InAs/InxAl1-xAs pseudomorphic HEMT's on InP	1997-04-01
174	High quality epitaxial Si grown by a simple low pressure chemical vapor deposition at 550 degrees C	1996-09-09
175	Picosecond photoresponse of carriers in Si ion-implanted Si	1996-07-29
176	Observation of compositional modulation in (111)A InGaAs quantum wells and the effect on optical properties	1996-07-22
177	Microstructure and subpicosecond photoresponse in GaAs grown by molecular beam epitaxy at very low temperatures	1996-07-15
178	Enhancement of the optical and electrical properties in InGaAlP/InGaP PIN heterostructures by rapid thermal annealing on misoriented substrate	1996-07-01
179	High quality Al(Ga)As/GaAs/Al(Ga)As quantum wells grown on (111)A GaAs substrates	1996-06-10
180	Optical and structural properties of spontaneously formed long-range compositional modulation in (111)A and (111)B AlGaAs	1996-06-01
181	Temperature-dependent transport properties of n(+) GaAs/low-temperature GaAs/n(+) GaAs structures grown by molecular beam epitaxy	1996-06-01
182	High optical quality of strained (111)B In0.12Ga0.88As/GaAs and In0.12Ga0.88As/Al0.2Ga0.8As multiple quantum wells	1996-05-06
183	SPONTANEOUSLY FORMED LONG-RANGE AL-RICH AND GA-RICH ALXGA1-XAS/ALYGA1-YAS SUPERLATTICE AND OPTICAL-PROPERTIES ENHANCEMENT IN (111)A ALGAAS	1995-12-11
184	SPONTANEOUS FORMATION OF AL RICH AND GA RICH ALXGA1-XAS/ALYGA1-YAS SUPERLATTICE AND STRONG ENHANCEMENT OF OPTICAL-PROPERTIES	1994-10-10
185	2-DIMENSIONAL ARSENIC PRECIPITATION BY IN DELTA-DOPING DURING LOW-TEMPERATURE MOLECULAR-BEAM EPITAXY GROWTH OF GAAS OR ALGAAS	1994-05-09
186	STRONG ACCUMULATION OF AS PRECIPITATES IN LOW-TEMPERATURE INGAAS QUANTUM-WELLS GROWN BY MOLECULAR-BEAM EPITAXY	1994-03-21
187	STRONG LUMINESCENCE INTENSITIES IN AL0.22GA0.78AS GROWN ON MISORIENTED (111)B GAAS	1993-10-25
188	Bipolar conductivity in nanocrystallized TiO2	1970-01-01

Patents

序號 No.	標題 Title	著作日期 Date
1	利用自動對準低溫淺接面製造具有極低臨界電壓金屬閘極／高介電常數材質之互補金氧半場效電晶體之方法	2009-11-16
2	Method for making very low Vt metal-gate/high-k CMOSFETs using self-aligned low temperature shallow junctions	2009-11-12
3	Ferroelectric thin film processing for ferroelectric field-effect transistor	2003-12-04
4	鐵電場效電晶體製造方法	2003-09-21

Plan

序號 No.	標題 Title	著作日期 Date
1	下世代單一電晶體動態隨機存取記憶體	2014
2	鍺電晶體之費米能階鎖定及介面反應的探討與改進	2014
3	新世代非揮發性記憶體之研究與發展	2014
4	鍺電晶體之費米能階鎖定及介面反應的探討與改進	2013
5	學研合作計畫---次22奈米金屬閘極/高介電質場效電晶體及記憶體技術平台(III)	2013
6	互補式場效電晶體元件的高介電質材料電性	2013
7	高效能薄膜電晶體和以薄膜電晶體為基底之非揮發性記憶體元件	2012
8	互補式場效電晶體元件的高介電質材料電性	2012
9	學研合作計畫－次22奈米金屬閘極/高介電質場效電晶體及記憶體技術平台( II )	2012
10	下一世代鍺基板電子元件	2011
11	學研合作計畫-次22奈米金屬閘極/高介電質場效電晶體及記憶體技術平台( I )	2011
12	互補式場效電晶體元件的高介電質材料電性	2011
13	高效能薄膜電晶體和以薄膜電晶體為基底之非揮發性記憶體元件	2011
14	高效能薄膜電晶體和以薄膜電晶體為基底之非揮發性記憶體元件	2010
15	下一世代鍺基板電子元件	2010
16	金屬閘極/高介電係數材料互補式金氧半場效電晶體在45到22奈米世代之應用(III)	2010
17	金屬閘極/高介電係數材料互補式金氧半場效電晶體在45到22奈米世代之應用(II)	2009
18	下一世代鍺基板電子元件	2009
19	金屬閘極及高介電係數介電質材料在奈米電子元件的應用	2008
20	金屬閘極/高介電係數材料互補式金氧半場效電晶體在45到22奈米世代之應用(I)	2008
21	Ⅲ-Ⅴ族薄膜和晶格無缺陷技術在高頻、光電元件的應用及3D矽積體電路的整合(III)	2007
22	金屬閘極及高介電係數介電質材料在奈米電子元件的應用	2007
23	Ⅲ-Ⅴ族薄膜和晶格無缺陷技術在高頻、光電元件的應用及3D矽積體電路的整合(II)	2006
24	金屬閘極及高介電係數介電質材料在奈米電子元件的應用	2006
25	新式非揮發性記憶體元件之研究(I)	2005
26	Ⅲ-Ⅴ族薄膜和晶格無缺陷技術在高頻、光電元件的應用及3D矽積體電路的整合(I)	2005
27	矽VLSI之射頻與光學無線內接線(III)	2004
28	高性能混合訊號式介面積體電路-子計畫一：矽射頻元件模型與技術(III)	2004
29	矽VLSI之射頻與光學無線內接線(II)	2003
30	高性能混合訊號式介面積體電路---子計畫I---矽射頻元件模型與技術(II)	2003
31	矽VLSI之射頻與光學無線內接線(I)	2002
32	高性能混合訊號式介面積體電路---子計劃I：矽射頻元件模型與技術(I)	2002
33	深次微米射頻元件	2001
34	單一電晶體記憶元件	2001
35	矽鍺非應力層在高速電晶體及射頻元件的應用	2000
36	高介電氧化鋁閘極於下世代深次微米技術的應用	2000
37	寄生氧化層對具有原子層平坦之超薄氧化層的影響	2000
38	矽鍺應力層及非應力層的探討及高速電晶體之應用	2000
39	次〝兆分之一秒〞響應之研究	1999
40	BESOI的新製程	1999
41	微機電系統校際整合研究---子計畫九：微機電之光感測元件及其積體電路	1996
42	全像光學記憶體之紅光源材料、調變器及偵測元件	1996
43	分子束磊晶在低維量子元件的應用	1995
44	分子束磊晶在低維量子元件的應用	1994
45	光電及微波元件技術發展---子計畫二：雷射二極體及量子井結構(I)	1994
46	藍位移光電接收二極體	1993

Proceedings Paper

序號 No.	標題 Title	著作日期 Date
1	High Performance RF Passive Devices and Noise-Shielding MOSFET on IC-Standard Si Wafer for Sub-THz Applications	2013-01-01
2	Low Power Green Electronic Devices	2013-01-01
3	Ge technology beyond Si CMOS	2012-01-01
4	A 2.4 GHz CMOS Power Amplifier Using Asymmetric MOSFETs	2012-01-01
5	Advanced Metal-Gate/High-kappa CMOS with Small EOT and Better High Field Mobility	2012-01-01
6	Ultra-Low Switching Power RRAM Using Hopping Conduction Mechanism	2012-01-01
7	Size-Dependent Trapping Effect in Nano-Dot Non-Volatile Memory	2011-01-01
8	The Reliability Study and Device Modeling for p-HEMT Microwave Power Transistors	2011-01-01
9	Flat band voltage control on low V(t) metal-gate/high-kappa CMOSFETs with small EOT	2009-07-01
10	Improved Device Characteristics in Charge-Trapping-Engineered Flash Memory Using High-kappa Dielectrics	2009-01-01
11	Improved Lower Electrode Oxidation of High-kappa TiCeO Metal-Insulator-Metal Capacitors by Using a Novel Plasma Treatment	2008-01-01
12	High Performance Ir/TiPrO/TaN MIM Capacitors for Analog ICs Application	2008-01-01
13	A CMOS-Compatible, High RF Power, Asymmetric-LDD MOSFET with Excellent Linearity	2008-01-01
14	Low V-t gate-first Al/TaN/[Ir3Si-HfSi2-x]/HfLaON CMOS using simple laser annealing/reflection	2008-01-01
15	Advance in next Century nanoCMOSFET research	2007-10-31
16	High-performance radio frequency passive devices on plastic substrates for radio frequency integrated circuit application	2007-04-01
17	Low threshold voltage and high drive current poly-silicon thin film transistors using Ytterbium metal gate and LaAlO3 dielectric	2007-01-01
18	Comparison of InGaAs MOSFETs with germanium-on-insulator CMOS	2006-08-01
19	Performance and potential of germanium on insulator field-effect transistors	2006-05-01
20	AC power loss and signal coupling in very large scale integration backend interconnects	2006-04-01
21	High performance band-pass filter embedded into SoCs using VLSI backend interconnects and high resistivity silicon substrate	2006-01-01
22	DC-RF performance improvement for strained 0.13 mu m MOSFETs mounted on a flexible plastic substrate	2006-01-01
23	Low voltage high speed SiO(2)/AlGaN/AlLaO(3)/TaN memory with good retention	2005-01-01
24	Lanthanide and Ir-based dual metal-gate/HfAlON CMOS with large work-function difference	2005-01-01
25	Physics and modeling of Ge-on-Insulator MOSFETs	2005-01-01
26	Very high density RF MIM capacitor compatible with VLSI	2005-01-01
27	Low noise and high gain RF MOSFETs on plastic substrates	2005-01-01
28	Modeling RF MOSFETs after electrical stress using low-noise microstrip line layout	2005-01-01
29	Strain-induced very low noise RF MOSFETs on flexible plastic substrate	2005-01-01
30	Very high kappa and high density TiTaO MIM capacitors for analog and RF applications	2005-01-01
31	Novel SiO2/AlN/HfAlO/IrO2 memory with fast erase, large triangle V-th and good retention	2005-01-01
32	Low temperature MOSFET technology with Schottky barrier source/drain, high-K gate dielectric and metal gate electrode	2004-10-01
33	3D GOI CMOSFETs with novel IrO2(Hf) dual gates and high-kappa dielectric on 1P6M-0.18 mu m-CMOS	2004-01-01
34	Modeling finger number dependence on RF noise to 10 GHz in 0.13 mu m node MOSFETs with 80nm gate length	2004-01-01
35	A tunable and program-erasable capacitor on Si with excellent tuning memory	2004-01-01
36	High hole mobility of Al2O3 mosfets on dislocation free Ge-on-insulator wafers	2004-01-01
37	High performance metal-gate/high-kappa, MOSFETs and GaAs compatible RF passive devices on Ge-on-Insulator tlechnology	2004-01-01
38	High density RF MIM capacitors using high-kappa AlTaOx dielectrics	2003-01-01
39	Low RF loss and noise of transmission lines on Si substrates using an improved ion implantation process	2003-01-01
40	Microwave coplanar filters on Si substrates	2003-01-01
41	The minimum noise figure and mechanism as scaling RF MOSFETs from 0.18 to 0.13 mu m technology nodes	2003-01-01
42	La2O3/Si0.3Ge0.7 p-MOSFETs and Ni germano-silicide	2003-01-01
43	Optimized noise and consistent RF model for 0.18 mu m MOSFETs	2003-01-01
44	Fully silicided NiSi and germanided NiGe dual gates on SiO2/Si and Al2O3/Ge-on-insulator MOSFETs	2003-01-01
45	RF passive devices on Si with excellent performance close to ideal devices designed by electro-magnetic simulation	2003-01-01
46	Study on dopant activation of phosphorous implanted polycrystalline silicon thin films by KrF excimer laser annealing	2002-08-01
47	RF MIM capacitors using high-K Al2O3 and AlTiOx dielectrics	2002-01-01
48	Transmission line noise from standard and proton-implanted Si	2001-01-01
49	Rf loss and cross talk on extremely high resistivity (10K-1M Omega-cm) Si fabricated by ion implantation	2000-01-01
50	The performance limiting factors as RF MOSFETs scaling down	2000-01-01
51	High quality La2O3 and Al2O3 gate dielectrics with equivalent oxide thickness 5-10 angstrom	2000-01-01
52	Electrical characterization of Al2O3 on Si from thermally oxidized AlAs and Al	1999-05-01
53	Deuterium effect on stress-induced leakage current	1999-04-01
54	Mobility and oxide breakdown behavior in ultra-this oxide with atomically smooth interface	1998-01-01
55	Investigation of Si-doped p-type AlGaAs/GaAs, AlGaAs/InGaAs quantum well infrared photodetectors and multiquantum wells grown on (311)A GaAs	1997-05-01
56	Novel approach to enhance the optical property in AlGaAs and InGaAlP by natural ordering during growth	1996-01-01
57	STRONG ENHANCEMENT OF THE OPTICAL AND ELECTRICAL-PROPERTIES, AND SPONTANEOUS FORMATION OF AN ORDERED SUPERLATTICE IN (111)B ALGAAS	1995-05-01
58	Ultra-thin oxide with atomically smooth interfaces	1995-01-01

Thesis

序號 No.	標題 Title	著作日期 Date
1	使用二氧化矽/氧化鋁介電層運用在氮化鎵鋁/氮化鎵金屬-絕緣層-半導體電晶體的研究	2013
2	氧化鍺覆蓋層在二氧化鈦與鋯鈦酸鉛基底之電阻式隨機存取記憶體之研究	2013
3	高介電係數介電層應用於氮化鎵電晶體之特性探討	2013
4	介面緩衝層氧化物對氧化鋯鉿金屬-氧化物-半導體鐵電電容的影響	2013
5	應用二氧化矽介面層改善二氧化鈦電阻式記憶體的功率開關特性	2013
6	對於K頻段互補式金氧半射頻前端電路內超低功率集成元件之研究與設計方法	2012
7	氧化鋁/二氧化鈦電阻式記憶體元件的低功率開關特性探討	2012
8	金屬閘極/高介電係數氧化層技術在氮化鎵電晶體之應用	2012
9	二氧化鉿/二氧化鋯介電質應用於非晶態氧化銦鎵鋅薄膜電晶體之特性探討	2012
10	氮氧化鉿電荷捕獲層與二氧化鉿/二氧化矽雙層結構於非揮發性記憶體之特性研究	2012
11	具有氧化鋁鑭與二氧化矽雙層閘極介電層低操作電壓非晶態氧化銦鎵鋅薄膜電晶體之研究	2012
12	應用於Ku-band之低功率主動式降頻混頻器	2012
13	使用二氧化鍺/二氧化鈦介電層之低功率電阻式記憶體之研究	2012
14	高度微縮等效氮化矽厚度之電荷捕獲記憶體和金屬-絕緣層-金屬電容結構之研究	2011
15	鍺擴散於氮化矽快閃記憶體之研究	2011
16	具有鐿金屬矽化物之蕭特基能障金氧半場效電晶體的應用	2011
17	有機鐵電薄膜於閘極堆疊結構之研究	2011
18	氧化鋁/氧化鈦電阻轉化層之電阻式記憶體特性研究	2011
19	利用非對稱元件在0.18微米互補式金氧半電晶體製程製作之具有高功率乘載能力的收發機開關	2011
20	應用於K-band之低功率吉爾伯特降頻混頻器	2011
21	矽化鉑蕭特基金氧半電晶體使用高介電係數介電層與金屬閘極	2011
22	T25高壓製程之高頻特性研究測試元件	2011
23	介面保護與雷射退火增進高效能N型鍺電晶體之研究	2010
24	0.13微米以下快閃記憶體位元線漏電之防治方法	2010
25	高介電係數介電質於五苯有機薄膜電晶體及金氧半場效電晶體之研究	2009
26	具四埠功率結合技術的CMOS功率放大器之研究	2009
27	具有低電壓之金屬-氧化層-氮化層-氧化層-矽結構非揮發性記憶體之製程技術應用與研究	2009
28	高效能高頻功率放大器使用控制電路調整基極電壓之研究	2009
29	利用交錯訊號穿透提升隔離度低功率混頻器之研究	2009
30	非對稱輕摻雜汲極金氧化半導體電晶體微波電性分析	2009
31	使用變壓器回授及正向基底偏壓壓控振盪器之研究	2008
32	非對稱輕摻雜汲極金屬氧化半導體電晶體應用於2.4GHz之功率放大器	2008
33	非對稱性LDD金氧半元件應用於射頻收發開關之研究	2008
34	高介電係數介電質材料應用於金氧金電容之研究	2008
35	非對稱性LDD金氧半元件之單刀雙擲開關應用於超寬頻3.1~10.6GHz之研究	2007
36	可寫入抹除高介電常數氮氧化鉿金屬-絕緣層-矽電容	2007
37	低臨限電壓與高驅動電流之薄膜電晶體在金屬鋁與介電層氧化鑭鉿上之研究	2007
38	高介電常數介電質金屬-絕緣層-金屬電容應用於動態	2007
39	非對稱輕摻雜汲極金屬氧化半導體電晶體應用於2.4GHz 射頻功率放大器	2007
40	金屬矽化物-高介電常數介電質-半導體場效應電晶體之電性研究	2007
41	使用完全矽化閘極-高介電常數介電質之低臨界電壓金氧半電晶體	2007
42	高功函數矽化鉺金屬閘極之高溫穩定氮氧化鉿鑭P型金氧半場效電晶體研究	2007
43	電流重複用之超寬頻金氧半低雜訊放大器應用於3.1-10.6GHZ	2007
44	高介電常數介電質金氧金電容應用於動態記憶體與射頻元件之研究	2007
45	低臨界電壓雙金屬閘極金氧半電晶體製作技術之研發	2007
46	具有低電壓以及良好電荷儲存能力之金屬-氧化層-氮化層-氧化層-矽結構非揮發性記憶體之研究	2007
47	高介電係數介電質與金屬閘極製程技術之研究與應用	2006
48	先進大型積體電路整合之製程設計與元件特性	2006
49	高介電係數介電質與金屬閘極製程技術應用在金屬-氧化層-氮化層-氧化層-矽結構之非揮發性記憶體	2006
50	切換感值之射頻電壓控制振盪器研究	2006
51	高介電係數介電質在金氧金電容之研究	2006
52	應用於超寬頻3.1-10.6 GHz之無線接收端之低雜訊放大器之設計	2006
53	高介電常數金屬-絕緣層-金屬電容電性及其可靠度之研究	2006
54	高介電常數介電質於金屬-絕緣層-金屬電容之電性研究	2006
55	應用於超寬頻3.1~10.6GHz的多段式電感之電感電容調整式電壓控制振盪器	2006
56	高頻被動元件在矽基板和多層介電質基板之模型與特性	2005
57	射頻金氧半場效電晶體之電性效應與元件模型	2005
58	高性能金屬閘極低溫多晶矽薄膜電晶體之研究	2005
59	應用於超寬頻3.1-10.6GHz無線接收端之疊接回授架構與低功率電流再使用架構之低雜訊放大器之設計	2005
60	於 3.1-10.6GHz 無線應用的超寬頻金氧半功率放大器	2005
61	應用於超寬頻3.1-10.6 GHz低雜訊放大器之設計	2005
62	1.8伏金氧半低雜訊放大器之設計應用於超寬頻UWB 3.1-10.6GHZ無線接收端	2005
63	新穎的金氧半電晶體雜訊模型與應用於超寬頻系統低雜訊放大器之設計	2004
64	應用在802.11a和超寬頻系統之射頻CMOS線性功率放大器之設計	2004
65	1.8伏金氧半低雜訊放大器應用於超寬頻3.1-10.6GHZ無線接收端	2004
66	高介電常數閘極介電質熱氧化氧化鋁在金氧半電晶體的電性及應用	2004
67	使用金屬閘極及高介電常數介電質在絕緣層上有鍺電晶體之研究	2004
68	高介電常數射頻金屬-絕緣層-金屬電容及其電容值變動之研究	2003
69	高介電常數介電質的電性及其在元件上的應用	2002
70	高介電係數介電質在金屬-絕緣層-金屬結構電容上的應用	2002
71	5.8GHz CMOS低雜訊放大器的設計及新穎的雜訊模型之研究	2002
72	鎳:矽/鍺化合物在光電積體電路上的特性及應用	2002
73	場效電晶體高頻模型的建立及矽鍺合金層應用於高介電物質電晶體對電洞遷移率的改善	2002
74	利用質子佈植之高阻值矽基板上被動元件射頻/微波特性及其應用	2002
75	高鍺矽鍺之矽鎳化合物	2001
76	低溫複晶矽薄膜電晶體之研究	2000
77	氧化鋁超晶格之發光二極體	2000
78	銅污染對閘極絕緣層的效應及影響	2000
79	深次微米矽在絕緣層上N型金氧半場效電晶體之研究	1999
80	高介電質材料氧化鑭之研究	1999
81	氮化矽閘極薄氧化層之研究	1999
82	磊晶矽鍺合金的成長及其在元件的應用	1999
83	高介電材料氧化鋁於元件介電層之應用	1998
84	射頻金氧半場效電晶體	1998
85	由矽磊晶到極平整之超薄氧化層製作	1998
86	LPCVD以SiH4低溫下成長高品質矽磊晶	1995
87	高速矽材料之研討--微微秒載子生命週期和SOI	1995
88	化合物自動組成相關的光學特性增強	1994

荊鳳德 Chin, Albert

Article

Patents

Plan

Proceedings Paper

Thesis

人文社會學院

工學院

生物科技學院

光電學院

客家文化學院

理學院

資訊學院

電機學院

管理學院

其他

科技法律學院