1. 目前位置：
崔秉鉞

崔秉鉞 Tsui, Bing-Yue

電子郵件／E-mail：bytsui@mail.nctu.edu.tw

服務單位／Department：電機學院 ／ 電子工程學系及電子研究所

著作期間／Publish Period：1986 - 2014-06-01

著作統計／Statistics

Article（63）
Others（5）
Patents（8）
Plan（25）
Proceedings Paper（22）
Thesis（65）

Article

序號
No.		 標題
Title		 著作日期
Date
1 Modeling the Impact of Random Grain Boundary Traps on the Electrical Behavior of Vertical Gate 3-D NAND Flash Memory Devices
 2014-06-01
2 Microtrenching-free two-step reactive ion etching of 4H-SiC using NF3/HBr/O-2 and Cl-2/O-2 2014-05-01
3 High performance of CNT-interconnects by the multi-layer structure
 2014-04-01
4 Schottky barrier height modification of metal/4H-SiC contact using ultrathin TiO2 insertion method
 2014-04-01
5 Enhancing the Performance of Germanium Channel nMOSFET Using Phosphorus Dopant Segregation
 2014-01-01
6 SixGe1-x Epitaxial Tunnel Layer Structure for P-Channel Tunnel FET Improvement
 2013-12-01
7 Mechanism of Schottky barrier height modulation by thin dielectric insertion on n-type germanium
 2013-07-15
8 Characteristics of size dependent conductivity of the CNT-interconnects formed by low temperature process
 2013-06-01
9 Effect of surface preparation on the radiation hardness of high-dielectric constant gate dielectric
 2013-03-01
10 Observation of Extreme-Ultraviolet-Irradiation-Induced Damages on High-Dielectric-Constant Dielectrics
 2011-11-01
11 Effects of EUV Irradiation on Poly-Si SONOS NVM Devices
 2011-05-01
12 High-Performance Poly-Si Nanowire Thin-Film Transistors Using the HfO(2) Gate Dielectric 2011-03-01
13 High-Performance Metal-Insulator-Metal Capacitors With HfTiO/Y(2)O(3) Stacked Dielectric 2010-08-01
14 A High-Performance 30-nm Gate-All-Around Poly-Si Nanowire Thin-Film Transistor With NH(3) Plasma Treatment 2010-07-01
15 Thermal Stability of Nickel Silicide and Shallow Junction Electrical Characteristics with Carbon Ion Implantation
 2010-01-01
16 Improvement of the Thermal Stability of NiSi by Germanium Ion Implantation
 2010-01-01
17 Ta-Pt Alloys as Gate Materials for Metal-Oxide-Semiconductor Field Effect Transistor Application
 2009-03-01
18 Trigate TiN Nanocrystal Memory with High-k Blocking Dielectric and High Work Function Gate Electrode 2009-01-01
19 Method for extracting gate-voltage-dependent source injection resistance of modified Schottky barrier (MSB) MOSFETs
 2008-09-01
20 Two-dimensional carrier profiling by Kelvin-probe force Microscopy
 2008-06-01
21 Thermal stability and electrical characteristics of tungsten nitride gates in metal-oxide-semiconductor devices
 2008-02-01
22 Bias-Dependent Source Injection Resistance of Modified Schottky Barrier MOSFET 2008-01-01
23 Transient charging and discharging behaviors of border traps in the dual-layer HfO2/SiO2 high-k gate stack observed by using low-frequency charge pumping method
 2007-06-01
24 The impact of high-voltage drift n-well and shallow trench isolation layouts on electrical characteristics of LDMOSFETs 2007-01-01
25 Current transport mechanisms of Schottky barrier and modified schottky barrier MOSFETs 2007-01-01
26 Process and characteristics of fully silicided source/drain (FSD) thin-film transistors
 2006-12-01
27 Spatial and energetic distribution of border traps in the dual-layer HfO2/SiO2 high-k gate stack by low-frequency capacitance-voltage measurement
 2006-10-16
28 Investigation of NiSi fully-silicided gate on SiO2 and HfO2 for applications in metal-oxide-semiconductor field-effect transistors
 2006-07-01
29 Study on the interface thermal stability of metal-oxide-semiconductor structures by inelastic electron tunneling spectroscopy
 2006-06-26
30 High-performance poly-silicon TFTs using HfO2 gate dielectric
 2006-05-01
31 Two-frequency C-V correction using five-element circuit model for high-k gate dielectric and ultrathin oxide
 2006-05-01
32 Investigation of molybdenum nitride gate on SiO2 and HfO2 for MOSFET application
 2006-01-01
33 Short-channel metal-gate TFTs with modified Schottky-barrier source/drain
 2006-01-01
34 Process and characteristics of modified Schottky barrier (MSB) p-channel FinFETs
 2005-11-01
35 A novel wafer reclaim method for amorphous SiC and carbon doped oxide films
 2005-11-01
36 Effects of base oxide thickness and silicon composition on charge trapping in HfSiO/SiO(2) high-k gate stacks 2005-08-01
37 Hot-carrier effects in p-channel modified Schottky-barrier FinFETs
 2005-06-01
38 High-performance poly-Si TFTs fabricated by implant-to-silicide technique
 2005-03-01
39 Electrical characteristics of thin HfO(2) gate dielectrics prepared using different pre-deposition surface treatments 2005-01-01
40 Optimization of back side cleaning process to eliminate copper contamination
 2005-01-01
41 Electrical stability and reliability of ultralow dielectric constant porous carbon-doped oxide film for copper interconnect
 2005-01-01
42 A comprehensive study on the FIBL of nanoscale MOSFETs
 2004-10-01
43 A novel 25-nm modified Schottky-barrier FinFET with high performance
 2004-06-01
44 Anisotropic thermal conductivity of nanoporous silica film
 2004-01-01
45 Via-filling capability of copper film by CVD
 2003-07-01
46 Stability investigation of single-wafer process by using a spin etcher 2003-07-01
47 Formation of interfacial layer during reactive sputtering of hafnium oxide
 2003-06-15
48 Metal drift induced electrical instability of porous low dielectric constant film
 2003-05-01
49 Process sensitivity and robustness analysis of via-first dual-damascene process
 2003-05-01
50 Wide range work function modulation of binary alloys for MOSFET application
 2003-03-01
51 Investigation of Cu/TaN metal gate for metal-oxide-silicon devices
 2003-01-01
52 Surface-processing-enhanced copper diffusion into fluorosilicate glass
 2001-11-01
53 Impact of silicide formation on the resistance of common source/drain region
 2001-10-01
54 Dielectric and barrier properties of spin-on organic aromatic low dielectric constant polymers FLARE and SiLK
 2001-06-01
55 Plasma charging damage during contact hole etch in high-density plasma etcher
 2000-12-01
56 DIELECTRIC DEGRADATION OF PT/SIO2/SI STRUCTURES DURING THERMAL ANNEALING 1993-04-01
57 SERIES RESISTANCE OF SELF-ALIGNED SILICIDED SOURCE DRAIN STRUCTURE
 1993-01-01
58 EFFECT OF FLUORINE INCORPORATION ON THE THERMAL-STABILITY OF PTSI/SI STRUCTURE
 1993-01-01
59 CONTACT RESISTIVITY OF SHALLOW JUNCTIONS FORMED BY IMPLANTATION THROUGH PT OR PTSI 1992-09-01
60 FORMATION OF PTSI-CONTACTED P+N SHALLOW JUNCTIONS BY BF2+ IMPLANTATION AND LOW-TEMPERATURE FURNACE ANNEALING 1991-04-15
61 LOW-TEMPERATURE REACTION OF THIN-FILM PLATINUM (LESS-THAN-OR-EQUAL-TO-300A) WITH (100) SILICON 1990-12-15
62 FORMATION AND CHARACTERIZATION OF A PTSI CONTACTED N+P SHALLOW JUNCTION 1990-09-01
63 A NOVEL PROCESS FOR HIGH-PERFORMANCE SCHOTTKY-BARRIER PMOS
 1989-05-01

Others

序號
No.		 標題
Title		 著作日期
Date
1 Investigation of Cu/TaN metal gate for metal-oxide-silicon devices (vol 150, pg G22, 2003)
 2003-05-01
2 ROLE OF FLUORINE-ATOMS ON THE THERMAL-STABILITY OF THE SILICIDE SILICON STRUCTURE 1994-08-01
3 FORMATION OF 0.1-MU-M N+ P JUNCTION BY AS+ IMPLANTATION THROUGH PT OR PTSI FILM 1990-04-01
4 HIGH-TEMPERATURE STABILITY OF PLATINUM SILICIDE ASSOCIATED WITH FLUORINE IMPLANTATION 1990-04-01
5 A NOVEL PROCESS FOR HIGH-PERFORMANCE SCHOTTKY-BARRIER PMOS 1988-03-01

Patents

序號
No.		 標題
Title		 著作日期
Date
1 阻擋銅擴散之障礙層複合材料
 2008-08-21
2 阻擋銅擴散之障礙層複合材料
 2008-01-01
3 全空乏型絕緣層上矽晶金氧半場效電晶體裝置及其製法
 2006-11-16
4 Fully-depleted SOI MOSFET device and process for fabricating the same
 2006-11-16
5 全空乏型絕緣層上矽晶金氧半場效電晶體裝置及其製法
 2006-01-21
6 金氧半場效電晶體之閘極結構
 2003-11-01
7 Structure of metal oxide semiconductor field effect transistor
 2003-10-09
8 金氧半場效電晶體之結構
 2003-06-11

Plan

序號
No.		 標題
Title		 著作日期
Date
1 新穎穿隧電晶體及在其在超低功率生醫電子積體電路之應用( II ) 2014
2 三維堆疊複晶矽非揮發性記憶體元件技術與分析 2014
3 新穎穿隧電晶體及在其在超低功率生醫電子積體電路之應用(1/3) 2013
4 三維堆疊複晶矽非揮發性記憶體元件技術與分析 2013
5 奈米碳管網絡薄膜電晶體與奈米碳管網絡導電膜之研究 2012
6 奈米碳管網絡薄膜電晶體與奈米碳管網絡導電膜之研究 2011
7 極低蕭基位障與接觸電阻技術之研究(I)
 2010
8 電漿淺層佈植技術應用於提昇半導體元件特性研究 2009
9 碳摻雜矽奈米線全包覆式閘極元件技術研究
 2009
10 高性能多閘極奈米元件技術 2008
11 碳摻雜矽奈米線全包覆式閘極元件技術研究 2008
12 高性能多閘極奈米元件技術 2007
13 碳摻雜矽奈米線全包覆式閘極元件技術研究 2007
14 高性能多閘極奈米元件技術 2006
15 奈米碳管薄膜電晶體研究 2006
16 單層奈米碳管前瞻奈米電子與光電元件之組裝、製程及元件特性研究---子計劃二：碳管與電極接觸阻抗、蕭基接面、多閘極元件、高頻特性、記憶單元應用之研究(I)
 2005
17 新型絕緣層上覆晶奈米元件(III)
 2004
18 新型絕緣層上覆晶奈米元件(II)
 2003
19 金屬閘極金氧半場效電晶體關鍵技術(III)
 2003
20 複晶矽表面平坦化之新穎製程技術與應用 2003
21 新型絕緣層上覆晶奈米元件(I)
 2002
22 金屬閘極金氧半場效電晶體關鍵技術(II)
 2002
23 金屬閘極金氧半場效電晶體關鍵技術(I) 2001
24 金屬閘極之功函數工程
 2000
25 Mechanism of Plasma Process Induced Damage on N-type and P-type MOSFET
 2000

Proceedings Paper

序號
No.		 標題
Title		 著作日期
Date
1 Investigation into the Performance of CNT-Interconnects by Spin Coating Technique 2013-01-01
2 Random Telegraph Signal Noise Arising from Grain Boundary Traps in Nano-scale Poly-Si Nanowire Thin-Film Transistors 2013-01-01
3 A New Procedure to Extract Ultra-Low Specific Contact Resistivity 2012-01-01
4 Multi-gate non-volatile memories with nanowires as charge storage material
 2010-05-01
5 A process for high yield and high performance carbon nanotube field effect transistors
 2010-05-01
6 Nanoscale Multigate TiN Metal Nanocrystal Memory Using High-k Blocking Dielectric and High-Work-Function Gate Electrode Integrated on Silcon-on-Insulator Substrate
 2009-04-01
7 High Performance Metal/Insulator/Metal Capacitors Using HfTiO as Dielectric 2009-01-01
8 Low threshold voltage CMOSFETs with NiSi fully silicided gate and Modified Schottky barrier source/drain junction 2007-01-01
9 Impact of back gate bias on hot-carrier effects of n-channel tri-gate FETs (TGFETs) 2006-01-01
10 Effect of oxygen absorption on contact resistance between metal and carbon nano tubes (CNTs) 2006-01-01
11 0.1 mu m poly-Si thin film transistors for system-on-panel (SoP) applications 2005-01-01
12 Characteristics of Modified-Schottky-Barrier (MSB) FinFETs 2005-01-01
13 Simulation study of carbon nanotube field emission display with under-gate and planar-gate structures
 2004-05-01
14 High thermal stability metal gate with tunable work function 2004-01-01
15 A novel fully self-aligned process for high cell density trench gate power MOSFETs 2004-01-01
16 Trench gate power MOSFETs with retrograde body profile 2004-01-01
17 A novel wafer reclaim method for silicon carbide film 2003-01-01
18 Anisotropic thermal conductivity of nano-porous silica film 2003-01-01
19 Electrical and material stability of Orion(TM) CVD ultra low-k dielectric film for copper interconnection 2002-01-01
20 Impact of interface nature on deep sub-micron Al-plug resistance
 2001-11-01
21 Electrical reliability of low dielectric constant diffusion barrier (a-SiC : H) for copper interconnect 2001-01-01
22 Electrical reliability issues of integrating low-K dielectrics with Cu metallization
 2000-01-01

Thesis

序號
No.		 標題
Title		 著作日期
Date
1 游離輻射對N型電晶體的隨機電報雜訊之影響研究
 2014
2 電漿處理對二氧化鉿/矽介面層抗輻射能力之影響
 2014
3 利用鋁基介面層之高品質金屬-絕緣層-鍺電容器之研究 2014
4 晶粒尺寸於垂直閘極半導體-氧化矽-氮化矽-氧 化矽-半導體記憶體元件特性變異之研究 2014
5 碳化矽金氧半場效電晶體特性之研究暨深層暫態能譜分析系統改良 2014
6 精確且高效率之蕭基位障萃取程序
 2013
7 以深層暫態能譜分析碳化矽缺陷之研究暨溝槽式接面蕭基位障二極體之設計分析
 2013
8 鎳鍺化物接觸之N+-P鍺淺接面及接觸電阻之研究
 2013
9 鎳鍺化物與N型鍺接面摻雜析離對於蕭基位障的影響:透過第一原理計算
 2013
10 碳化矽金氧半場效電晶體通道遷移率劣化機制之研究
 2013
11 游離輻射對電阻式記憶體的影響之研究
 2012
12 游離輻射對具有不同厚度之鉿氧化物金氧半元件影響之研究
 2012
13 萃取接觸阻抗係數方法之比較研究──CBKR結構與改良式TLM結構
 2012
14 降低金屬與N型鍺接觸電阻之研究
 2012
15 碳摻雜製程與高性能多晶矽奈米線薄膜電晶體之研究
 2011
16 介面處理對鉿氧化物之抗極紫外光輻射損傷之影響研究 2011
17 交絡奈米碳管網路薄膜電晶體特性之研究
 2011
18 利用低熱預算製程改善碳化矽電容介面能態密度
 2011
19 具多閘極之修正蕭基位障電晶體及氮化鈦奈米晶粒記憶體之研究
 2010
20 以奈米壓印技術製作大面積次微米孔洞陣列
 2010
21 非揮發性記憶體的儲存電荷的空間分佈對元件特性的影響
 2009
22 奈米碳管記憶體之電荷儲存效應研究
 2009
23 修正蕭基位障非揮發性記憶體於薄膜電晶體基板之研究
 2009
24 氧化鋁/二氧化鉿交錯層應用於非揮發性記憶體特性研究
 2009
25 極紫外光輻射對於高介電常數介質之影響研究
 2009
26 碳離子佈植對鎳化矽熱穩定性與碳化矽形成影響之研究
 2009
27 極紫外光輻射對先進非揮發性記憶體的影響
 2009
28 矽化鎳之熱穩定性與超淺接面應用的研究
 2009
29 奈米碳管電晶體之高頻特性研究
 2008
30 氮化鈦/氧化鋁鉿/氮化鈦金氧金電容之電性分析與電壓電容係數物理模型
 2008
31 單壁奈米碳管網絡應用於薄膜電晶體與非揮發性記憶體之特性研究
 2007
32 修正蕭基位障電晶體之源極/汲極阻抗分析
 2007
33 金屬-氧化鈦鉿-金屬電容於動態記憶體與射頻電路之應用
 2007
34 多閘極氮化鈦奈米晶粒非揮發性記憶體之研究
 2007
35 鈦酸鍶高介電常數介電質於MIM電容之應用
 2007
36 奈米碳管與鈀金屬之接觸阻抗研究
 2007
37 高性能奈米碳管電晶體之製程與特性研究
 2007
38 佈局參數對高壓金氧半場效電晶體電性影響之研究
 2007
39 鍺離子佈植對矽化鎳及其接面之影響
 2007
40 以二氧化鉿為基底之高介電常數閘極介電層中的電荷捕捉與逃逸之電特性分析
 2006
41 矽化鎳搭配高介電常數薄膜特性之研究
 2006
42 功率元件之不等電位場板終端結構設計
 2006
43 互補式金氧半電晶體之金屬閘極材料與技術研究
 2006
44 鉭鉑合金於銅閘極薄膜電晶體上之應用
 2005
45 薄膜電晶體之暫態電流測量技術
 2005
46 新穎三閘極電晶體與薄膜電晶體之製程技術與特性研究
 2005
47 低介電常數材料應用於多層導體連線之電特性分析
 2004
48 奈米碳管接觸阻抗與電場效應研究
 2004
49 蕭基位障對奈米碳管電晶體與薄膜電晶體之影響
 2004
50 前處理對二氧化鉿閘極介電層特性的影響
 2004
51 奈米碳管電晶體之遲滯效應研究
 2004
52 離子佈植對雙擴散汲極金氧半場效電晶體之影響
 2004
53 增進複晶矽薄膜電晶體特性之先進技術
 2003
54 以掃描探針測量矽半導體載子濃度
 2003
55 金屬氮化物之功函數調變研究
 2003
56 二氧化鉿薄膜製備與鉿污染研究 2002
57 完全自動對準之高功率金氧半場效應電晶體 2002
58 逆向基體之高功率金氧半場效應電晶體 2002
59 金屬與奈米碳管之接觸性質研究 2002
60 末端結構設計對電致遷移生命期測試之影響 2001
61 超低介電常數材料熱傳導係數之研究 2001
62 物理氣相沉積之二氧化鉿(HfO2)薄膜的特性研究 2001
63 金屬閘極之金氧半元件平帶電壓穩定性研究 2000
64 矽化鉑在積體電路應用上之材料性質與製程技術 1991
65 矽化鉑的特性及其在互補式金氧半超大型積體電路上之應用 1986
電機學院