1 |
On-Chip Transient Voltage Suppressor Integrated With Silicon-Based Transceiver IC for System-Level ESD Protection |
2014-10-01 |
2 |
Investigating electron depletion effect in amorphous indium-gallium-zinc-oxide thin-film transistor with a floating capping metal by technology computer-aided design simulation and leakage reduction |
2014-06-01 |
3 |
Local CDM ESD Protection Circuits for Cross-Power Domains in 3D IC Applications |
2014-06-01 |
4 |
Evaluation of subcortical grey matter abnormalities in patients with MRI-negative cortical epilepsy determined through structural and tensor magnetic resonance imaging |
2014-05-14 |
5 |
Design of high-voltage-tolerant stimulus driver with adaptive loading consideration to suppress epileptic seizure in a 0.18-mu m CMOS process |
2014-05-01 |
6 |
Layout Consideration and Circuit Solution to Prevent EOS Failure Induced by Latchup Test in a High-Voltage Integrated Circuits |
2014-03-01 |
7 |
On the Design of Power-Rail ESD Clamp Circuits With Gate Leakage Consideration in Nanoscale CMOS Technology |
2014-03-01 |
8 |
Synthesis of uniform core-shell gelatin-alginate microparticles as intestine-released oral delivery drug carrier |
2014-02-01 |
9 |
A Fully Integrated 8-Channel Closed-Loop Neural-Prosthetic CMOS SoC for Real-Time Epileptic Seizure Control |
2014-01-01 |
10 |
Metal-layer capacitors in the 65 nm CMOS process and the application for low-leakage power-rail ESD clamp circuit |
2014-01-01 |
11 |
SCR-based transient detection circuit for on-chip protection design against system-level electrical transient disturbance |
2014-01-01 |
12 |
Through Diffusion Tensor Magnetic Resonance Imaging to Evaluate the Original Properties of Neural Pathways of Patients with Partial Seizures and Secondary Generalization by Individual Anatomic Reference Atlas |
2014-01-01 |
13 |
Robust ESD Protection Design for 40-Gb/s Transceiver in 65-nm CMOS Process |
2013-11-01 |
14 |
Design of 2 x V-DD-Tolerant I/O Buffer With PVT Compensation Realized by Only 1 x V-DD Thin-Oxide Devices |
2013-10-01 |
15 |
Power-Rail ESD Clamp Circuit With Diode-String ESD Detection to Overcome the Gate Leakage Current in a 40-nm CMOS Process |
2013-10-01 |
16 |
A Latchup-Immune and Robust SCR Device for ESD Protection in 0.25-mu m 5-V CMOS Process |
2013-05-01 |
17 |
Implantable Stimulator for Epileptic Seizure Suppression With Loading Impedance Adaptability |
2013-04-01 |
18 |
Design of Dual-Band ESD Protection for 24-/60-GHz Millimeter-Wave Circuits |
2013-03-01 |
19 |
High Area-Efficient ESD Clamp Circuit With Equivalent RC-Based Detection Mechanism in a 65-nm CMOS Process |
2013-03-01 |
20 |
Large-Swing-Tolerant ESD Protection Circuit for Gigahertz Power Amplifier in a 65-nm CMOS Process |
2013-02-01 |
21 |
PMOS-based power-rail ESD clamp circuit with adjustable holding voltage controlled by ESD detection circuit |
2013-02-01 |
22 |
Resistor-Less Design of Power-Rail ESD Clamp Circuit in Nanoscale CMOS Technology |
2012-12-01 |
23 |
Investigation on CDM ESD events at core circuits in a 65-nm CMOS process |
2012-11-01 |
24 |
Power-Rail ESD Clamp Circuit With Ultralow Standby Leakage Current and High Area Efficiency in Nanometer CMOS Technology |
2012-10-01 |
25 |
Design of Compact ESD Protection Circuit for V-Band RF Applications in a 65-nm CMOS Technology |
2012-09-01 |
26 |
Study of intrinsic characteristics of ESD protection diodes for high-speed I/O applications |
2012-06-01 |
27 |
Characterization of SOA in Time Domain and the Improvement Techniques for Using in High-Voltage Integrated Circuits |
2012-06-01 |
28 |
Diode-Triggered Silicon-Controlled Rectifier With Reduced Voltage Overshoot for CDM ESD Protection |
2012-03-01 |
29 |
New Design of 2 x VDD-Tolerant Power-Rail ESD Clamp Circuit for Mixed-Voltage I/O Buffers in 65-nm CMOS Technology |
2012-03-01 |
30 |
ESD Protection Design for 60-GHz LNA With Inductor-Triggered SCR in 65-nm CMOS Process |
2012-03-01 |
31 |
New 4-Bit Transient-to-Digital Converter for System-Level ESD Protection in Display Panels |
2012-02-01 |
32 |
Design of Integrated Gate Driver With Threshold Voltage Drop Cancellation in Amorphous Silicon Technology for TFT-LCD Application |
2011-12-01 |
33 |
Stimulus driver for epilepsy seizure suppression with adaptive loading impedance |
2011-12-01 |
34 |
New Low-Leakage Power-Rail ESD Clamp Circuit in a 65-nm Low-Voltage CMOS Process |
2011-09-01 |
35 |
Improving Safe Operating Area of nLDMOS Array With Embedded Silicon Controlled Rectifier for ESD Protection in a 24-V BCD Process |
2011-09-01 |
36 |
Design and implementation of configurable ESD protection cell for 60-GHz RF circuits in a 65-nm CMOS process |
2011-08-01 |
37 |
Digital time-modulation pixel memory circuit in LTPS technology |
2011-08-01 |
38 |
Design and implementation of readout circuit on glass substrate with digital correction for touch-panel applications |
2011-07-01 |
39 |
Overview on ESD Protection Designs of Low-Parasitic Capacitance for RF ICs in CMOS Technologies |
2011-06-01 |
40 |
Design to suppress return-back leakage current of charge pump circuit in low-voltage CMOS process |
2011-05-01 |
41 |
Design and Implementation of Readout Circuit with Threshold Voltage Compensation on Glass Substrate for Touch Panel Applications |
2011-03-01 |
42 |
Electrostatic Discharge Protection Design for High-Voltage Programming Pin in Fully-Silicided CMOS ICs |
2011-02-01 |
43 |
Design of Analog Pixel Memory for Low Power Application in TFT-LCDs |
2011-02-01 |
44 |
ESD Protection Design With Lateral DMOS Transistor in 40-V BCD Technology |
2010-12-01 |
45 |
Implementation of delta-sigma analog-to-digital converter in LTPS process |
2010-11-01 |
46 |
Capacitor-Less Design of Power-Rail ESD Clamp Circuit With Adjustable Holding Voltage for On-Chip ESD Protection |
2010-11-01 |
47 |
New Transient Detection Circuit for On-Chip Protection Design Against System-Level Electrical-Transient Disturbance |
2010-10-01 |
48 |
Design and Implementation of Readout Circuit on Glass Substrate for Touch Panel Applications |
2010-08-01 |
49 |
High-Voltage-Tolerant ESD Clamp Circuit With Low Standby Leakage in Nanoscale CMOS Process |
2010-07-01 |
50 |
Design of 2xVDD-Tolerant Power-Rail ESD Clamp Circuit With Consideration of Gate Leakage Current in 65-nm CMOS Technology |
2010-06-01 |
51 |
Design of differential low-noise amplifier with cross-coupled-SCR ESD protection scheme |
2010-06-01 |
52 |
Investigation on NMOS-based power-rail ESD clamp circuits with gate-driven mechanism in a 0.13-mu m CMOS technology |
2010-06-01 |
53 |
Optimization on Layout Style of ESD Protection Diode for Radio-Frequency Front-End and High-Speed I/O Interface Circuits |
2010-06-01 |
54 |
Circuit and Layout Co-Design for ESD Protection in Bipolar-CMOS-DMOS (BCD) High-Voltage Process |
2010-05-01 |
55 |
New Layout Arrangement to Improve ESD Robustness of Large-Array High-Voltage nLDMOS |
2010-02-01 |
56 |
Design of 2xVDD-tolerant mixed-voltage I/O buffer against gate-oxide reliability and hot-carrier degradation |
2010-01-01 |
57 |
2xVDD-Tolerant Power-Rail ESD Clamp Circuit With Low Standby Leakage in 65-nm CMOS Process |
2010-01-01 |
58 |
ESD Protection Circuit for High-Voltage CMOS ICs with Improved Immunity Against Transient-Induced Latchup |
2010-01-01 |
59 |
Self-Matched ESD Cell in CMOS Technology for 60-GHz Broadband RF Applications |
2010-01-01 |
60 |
A BENDING N-WELL BALLAST LAYOUT TO IMPROVE ESD ROBUSTNESS IN FULLY-SILICIDED CMOS TECHNOLOGY |
2010-01-01 |
61 |
New Ballasting Layout Schemes to Improve ESD Robustness of I/O Buffers in Fully Silicided CMOS Process |
2009-12-01 |
62 |
Digital-to-analog converter with gamma correction on glass substrate for TFT-panel applications |
2009-10-01 |
63 |
Design of Analog Output Buffer With Level Shifting Function on Glass Substrate for Panel Application |
2009-09-01 |
64 |
Impact of Gate Leakage on Performances of Phase-Locked Loop Circuit in Nanoscale CMOS Technology |
2009-08-01 |
65 |
Transient-to-Digital Converter for System-Level Electrostatic Discharge Protection in CMOS ICs |
2009-08-01 |
66 |
Optimization on MOS-Triggered SCR Structures for On-Chip ESD Protection |
2009-07-01 |
67 |
Low-capacitance ESD protection design for high-speed I/O interfaces in a 130-nm CMOS process |
2009-06-01 |
68 |
Transient-Induced Latchup in CMOS ICs Under Electrical Fast-Transient Test |
2009-06-01 |
69 |
The Effect of IEC-Like Fast Transients on RC-Triggered ESD Power Clamps |
2009-06-01 |
70 |
A 5-GHz Differential Low-Noise Amplifier With High Pin-to-Pin ESD Robustness in a 130-nm CMOS Process |
2009-05-01 |
71 |
Area-Efficient ESD-Transient Detection Circuit With Smaller Capacitance for On-Chip Power-Rail ESD Protection in CMOS ICs |
2009-05-01 |
72 |
High-Voltage nLDMOS in Waffle-Layout Style With Body-Injected Technique for ESD Protection |
2009-04-01 |
73 |
Impedance-Isolation Technique for ESD Protection Design in RF Integrated Circuits |
2009-03-01 |
74 |
Design of High-Voltage-Tolerant ESD Protection Circuit in Low-Voltage CMOS Processes |
2009-03-01 |
75 |
Board-Level ESD of Driver ICs on LCD Panel |
2009-03-01 |
76 |
Design of Power-Rail ESD Clamp Circuit With Ultra-Low Standby Leakage Current in Nanoscale CMOS Technology |
2009-03-01 |
77 |
Investigation on Board-Level CDM ESD Issue in IC Products |
2008-12-01 |
78 |
Investigation on Robustness of CMOS Devices Against Cable Discharge Event (CDE) Under Different Layout Parameters in a Deep-Submicrometer CMOS Technology |
2008-11-01 |
79 |
Temperature Coefficient of Poly-Silicon TFT and Its Application on Voltage Reference Circuit With Temperature Compensation in LTPS Process |
2008-10-01 |
80 |
Low-capacitance and fast turn-on SCR for RF ESD protection |
2008-08-01 |
81 |
Investigation on the validity of holding voltage in high-voltage devices measured by transmission-line-pulsing (TLP) |
2008-07-01 |
82 |
Impact of MOSFET gate-oxide reliability on CMOS operational amplifier in a 130-nm low-voltage process |
2008-06-01 |
83 |
ESD protection design with on-chip ESD bus and high-voltage-tolerant ESD clamp circuit for mixed-voltage I/O buffers |
2008-06-01 |
84 |
Circuit performance degradation of switched-capacitor circuit with bootstrapped technique due to gate-oxide overstress in a 130-nm CMOS process |
2008-03-01 |
85 |
On-chip transient detection circuit for system-level ESD protection in CMOS integrated circuits to meet electromagnetic compatibility regulation |
2008-02-01 |
86 |
ESD protection design for fully integrated CMOS RF power amplifiers with waffle-structured SCR |
2008-01-01 |
87 |
2xVDD-tolerant crystal oscillator circuit realized with 1xVDD CMOS devices without gate-oxide reliability issue |
2008-01-01 |
88 |
Measurement on Snapback Holding Voltage of High-Voltage LDMOS for Latch-up Consideration |
2008-01-01 |
89 |
The impact of gate-oxide breakdown on common-source-amplifiers with diode-connected active load in low-voltage CMOS processes |
2007-11-01 |
90 |
On-chip ESD protection design for automotive vacuum-fluorescent-display (VFD) driver IC to sustain high ESD stress |
2007-09-01 |
91 |
New gate-bias voltage-generating technique with threshold-voltage compensation for on-glass analog circuits in LTPS process |
2007-09-01 |
92 |
Transient-induced latchup dependence on power-pin damping frequency and damping factor in CMOS integrated circuits |
2007-08-01 |
93 |
Fabrication of a miniature CMOS-based optical biosensor |
2007-06-15 |
94 |
Implementation of initial-on ESD protection concept with PMOS-triggered SCR devices in deep-submicron CMOS technology |
2007-05-01 |
95 |
Dependence of device structures on latchup immunity in a high-voltage 40-V CMOS process with drain-extended MOSFETs |
2007-04-01 |
96 |
Test structure on SCR device in waffle layout for RE ESD protection |
2007-01-01 |
97 |
Design of mixed-voltage crystal oscillator circuit in low-voltage CMOS technology |
2007-01-01 |
98 |
ESD protection design for giga-Hz high-speed I/O interfaces in a 130-nm CMOS process |
2007-01-01 |
99 |
An output buffer for 3.3-V applications in a 0.13-mu m 1/2.5-V CMOS process |
2007-01-01 |
100 |
Ultra-high-voltage charge pump circuit in low-voltage bulk CMOS processes with polysilicon diodes |
2007-01-01 |
101 |
Overview on ESD protection design for mixed-voltage I/O interfaces with high-voltage-tolerant power-rail ESD clamp circuits in low-voltage thin-oxide CMOS technology |
2007-01-01 |
102 |
Bond pad design with low capacitance in CMOS technology for RF applications |
2007-01-01 |
103 |
ESD-protection design with extra low-leakage-current diode string for RF circuits in SiGeBiCMOS process |
2006-12-01 |
104 |
ESD robustness of thin-film devices with different layout structures in LTPS technology |
2006-12-01 |
105 |
Design on power-rail ESD clamp circuit for 3.3-V I/O interface by using only 1-V/2.5-V low-voltage devices in a 130-nm CMOS process |
2006-10-01 |
106 |
Design of mixed-voltage I/O buffer by using NMOS-blocking technique |
2006-10-01 |
107 |
Component-level measurement for transient-induced latch-up in CMOS ICs under system-level ESD considerations |
2006-09-01 |
108 |
Overview and design of mixed-voltage I/O buffers, with low-voltage thin-oxide CMOS transistors |
2006-09-01 |
109 |
New curvature-compensation technique for CMOS bandgap reference with sub-1-V operation |
2006-08-01 |
110 |
Failure analysis and solutions to overcome latchup failure event of a power controller IC in bulk CMOS technology |
2006-07-01 |
111 |
On-Panel Output Buffer With Offset Compensation Technique for Data Driver in LTPS Technology |
2006-06-01 |
112 |
Design of charge pump circuit with consideration of gate-oxide reliability in low-voltage CMOS processes |
2006-05-01 |
113 |
ESD failure mechanisms of analog I/O cells in 0.18-mu m CMOS technology |
2006-03-01 |
114 |
Overview on electrostatic discharge protection designs for mixed-voltage I/O interfaces: Design concept and circuit implementations |
2006-02-01 |
115 |
Evaluation on board-level noise filter networks to suppress transient-induced latchup in CMOS ICs under system-level ESD test |
2006-02-01 |
116 |
Electrostatic discharge protection scheme without leakage current path for CMOS IC operating in power-down-mode condition on a system board |
2006-02-01 |
117 |
ESD protection design for I/O cells with embedded SCR structure as power-rail ESD clamp device in nanoscale CMOS technology |
2005-11-01 |
118 |
ESD protection design of low-voltage-triggered p-n-p devices and their failure modes in mixed-voltage I/O interfaces with signal levels higher than VDD and lower than VSS |
2005-09-01 |
119 |
Physical mechanism and device simulation on transient-induced latchup in CMOS ICs under system-level ESD test |
2005-08-01 |
120 |
The impact of low-holding-voltage issue in high-voltage CMOS technology and the design of latchup-free power-rail ESD clamp circuit for LCD driver ICs |
2005-08-01 |
121 |
A new Schmitt trigger circuit in a 0.13-mu m 1/2.5-V CMOS process to receive 3.3-V input signals |
2005-07-01 |
122 |
Overview of on-chip electrostatic discharge protection design with SCR-based devices in CMOS integrated circuits |
2005-06-01 |
123 |
SCR device fabricated with dummy-gate structure to improve turn-on speed for effective ESD protection in CMOS technology |
2005-05-01 |
124 |
ESD implantations for on-chip ESD protection with layout consideration in 0.18-mu m salicided CMOS technology |
2005-05-01 |
125 |
MOS-bounded diodes for on-chip ESD protection in deep submicron CMOS process |
2005-03-01 |
126 |
ESD protection design for mixed-voltage I/O buffer with substrate-triggered circuit |
2005-01-01 |
127 |
SCR device with dynamic holding voltage for on-chip ESD protection in a 0.25-mu m fully salicided CMOS process |
2004-10-01 |
128 |
On-chip ESD protection design with substrate-triggered technique for mixed-voltage I/O circuits in subquarter-micrometer CMOS process |
2004-10-01 |
129 |
ESD protection design to overcome internal damage on interface circuits,of a CMOS IC with multiple separated power pins |
2004-09-01 |
130 |
Double snapback characte'ristics in high-voltage nMOSFETs and the impact to on-chip ESD protection design |
2004-09-01 |
131 |
Investigation on device characteristics of MOSFET transistor placed under bond pad for high-pin-count SOC applications |
2004-09-01 |
132 |
Design on ESD protection scheme for IC with power-down-mode operation |
2004-08-01 |
133 |
Design optimization of ESD protection and latchup prevention for a serial I/O IC |
2004-02-01 |
134 |
Active electrostatic discharge (ESD) device for on-chip ESD protection in sub-quarter-micron complementary metal-oxide semiconductor (CMOS) process |
2004-01-15 |
135 |
Dummy-gate structure to improve turn-on speed of silicon-controlled rectifier (SCR) device for effective electrostatic discharge (ESD) protection |
2003-11-15 |
136 |
ESD implantation for subquarter-micron CMOS technology to enhance ESD robustness |
2003-10-01 |
137 |
SCR device with double-triggered technique for on-chip ESD protection in sub-quarter-micron silicided CMOS processes |
2003-09-01 |
138 |
Latchup-free ESD protection design with complementary substrate-triggered SCR devices |
2003-08-01 |
139 |
Analysis on the dependence of layout parameters on ESD robustness of CMOS devices for manufacturing in deep-submicron CMOS process |
2003-08-01 |
140 |
Anomalous latchup failure induced by on-chip ESD protection circuit in a high-voltage CMOS IC product |
2003-08-01 |
141 |
High-current characterization of polysilicon diode for electrostatic discharge protection in sub-quarter-micron complementary metal oxide semiconductor technology |
2003-06-01 |
142 |
CMOS chip as luminescent sensor for biochemical reactions |
2003-06-01 |
143 |
Methodology on extracting compact layout rules for latchup prevention in deep-submicron bulk CMOS technology |
2003-05-01 |
144 |
Substrate-triggered technique for on-chip ESD protection design in a 0.18-mu m salicided CMOS process |
2003-04-01 |
145 |
Substrate-triggered SCR device for on-chip ESD protection in fully silicided sub-0.25-mu m CMOS process |
2003-02-01 |
146 |
Substrate-triggered ESD protection circuit without extra process modification |
2003-02-01 |
147 |
Novel implantation method to improve machine-model electrostatic discharge robustness of stacked N-channel metal-oxide semiconductors (NMOS) in sub-quarter-micron complementary metal-oxide semiconductors (CMOS) technology |
2002-11-15 |
148 |
Electrostatic discharge protection design for mixed-voltage CMOS I/O buffers |
2002-08-01 |
149 |
ESD protection design for CMOS RF integrated circuits using polysilicon diodes |
2002-06-01 |
150 |
Fully process-compatible layout design on bond pad to improve wire bond reliability in CMOS ICs |
2002-06-01 |
151 |
Stacked-NMOS triggered silicon-controlled rectifier for ESD protection in high/low-voltage-tolerant I/O interface |
2002-06-01 |
152 |
Substrate-triggered ESD clamp devices for use in power-rail ESD clamp circuits |
2002-05-01 |
153 |
Design on the low-capacitance bond pad for high-frequency I/O circuits in CMOS technology |
2001-12-01 |
154 |
On-chip ESD protection design by using polysilicon diodes in CMOS process |
2001-04-01 |
155 |
Hardware/firmware co-design in an 8-bits microcontroller to solve the system-level ESD issue on keyboard |
2001-03-01 |
156 |
ESD protection design on analog pin with very low input capacitance for high-frequency or current-mode applications |
2000-08-01 |
157 |
Design on the low-leakage diode string for using in the power-rail ESD clamp circuits in a 0.35-mu m silicide CMOS process |
2000-04-01 |
158 |
Cascoded LVTSCR with tunable holding voltage for ESD protection in bulk CMOS technology without latchup danger |
2000-03-01 |
159 |
New layout design for submicron CMOS output transistors to improve driving capability and ESD robustness |
1999-03-01 |
160 |
Design of dynamic-floating-gate technique for output ESD protection in deep-submicron CMOS technology |
1999-02-01 |
161 |
Improved output ESD protection by dynamic gate floating design |
1998-09-01 |
162 |
Multiple-cell square-type layout design for output transistors in submicron CMOS technology to save silicon area |
1998-06-01 |
163 |
A gate-coupled PTLSCR/NTLSCR ESD protection circuit for deep-submicron low-voltage CMOS IC's |
1997-01-01 |
164 |
Capacitor-couple ESD protection circuit for deep-submicron low-voltage CMOS ASIC |
1996-09-01 |
165 |
Complementary-LVTSCR ESD protection circuit for submicron CMOS VLSI/ULSI |
1996-04-01 |
166 |
COMPLEMENTARY-SCR ESD PROTECTION CIRCUIT WITH INTERDIGITATED FINGER-TYPE LAYOUT FOR INPUT PADS OF SUBMICRON CMOS ICS |
1995-07-01 |
167 |
MODELING THE POSITIVE-FEEDBACK REGENERATIVE PROCESS OF CMOS LATCHUP BY A POSITIVE TRANSIENT POLE METHOD .1. THEORETICAL DERIVATION |
1995-06-01 |
168 |
MODELING THE POSITIVE-FEEDBACK REGENERATIVE PROCESS OF CMOS LATCHUP BY A POSITIVE TRANSIENT POLE METHOD .2. QUANTITATIVE-EVALUATION |
1995-06-01 |
169 |
TRANSIENT ANALYSIS OF SUBMICRON CMOS LATCHUP WITH A PHYSICAL CRITERION |
1994-02-01 |
170 |
CMOS ON-CHIP ELECTROSTATIC DISCHARGE PROTECTION CIRCUIT USING 4-SCR STRUCTURES WITH LOW ESD-TRIGGER VOLTAGE |
1994-01-01 |
171 |
A NEW ON-CHIP ESD PROTECTION CIRCUIT WITH DUAL PARASITIC SCR STRUCTURES FOR CMOS VLSI |
1992-03-01 |