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顏順通

顏順通 Yen, Shun-Tung

電子郵件／E-mail：styen@cc.nctu.edu.tw

服務單位／Department：電機學院 ／ 奈米中心

著作期間／Publish Period：1994-02-28 - 2014

著作統計／Statistics

Article（28）
Books（1）
Others（1）
Plan（15）
Proceedings Paper（3）
Thesis（33）

Article

序號
No.		 標題
Title		 著作日期
Date
1 Photon recycling effect on electroluminescent refrigeration
 2012-01-01
2 Electric-dipole transitions between group-III acceptor states in uniaxially compressed Ge
 2010-09-01
3 Analysis of heterostructures for electroluminescent refrigeration and light emitting without heat generation
 2010-03-01
4 Optical properties and potential applications of epsilon-GaSe at terahertz frequencies 2009-09-01
5 Electronic structure analysis for group III acceptors in Ge under stress considering screening effect and central-cell correction
 2009-08-19
6 Analysis of GaAs/GaSb/GaAs structures under optical excitation considering surface states as an electron reservoir
 2009-05-15
7 Negative and positive electroluminescence from a compensated p-type germanium in terahertz frequencies
 2007-12-10
8 Electron spillover effects in InGaN/GaN quantum-well lasers
 2007-12-01
9 Improvement in threshold of InGaN/GaN quantum-well lasers by p-type modulation doping
 2007-12-01
10 Discrete monolayer light emission from GaSb wetting layer in GaAs
 2007-06-11
11 Cyclotron masses and g-factors of hybridized electron-hole states in InAs/GaSb quantum wells 2006-08-01
12 Spin polarization of an electron-hole gas in InAs/GaSb quantum wells under a dc current 2006-03-01
13 Six-band k center dot p calculation of spin-dependent interband tunneling in strained broken-gap heterostructures under a quantizing magnetic field 2005-09-01
14 Effects of lattice mismatch and bulk anisotropy on interband tunneling in broken-gap heterostructures
 2005-03-15
15 Evidence for capture of holes into resonant states in boron-doped silicon
 2004-11-01
16 Landau level structures and semimetal-semiconductor transition in strained InAs/GaSb quantum wells 2004-03-01
17 Resonant hydrogenic impurity states and 1s-2p(0) transitions in coupled double quantum wells 2003-10-15
18 Strain-induced semimetal-semiconductor transition in InAs/GaSb broken-gap quantum wells 2002-08-15
19 Theory of resonant states of hydrogenic impurities in quantum wells 2002-08-15
20 Hybridization of electron, light-hole, and heavy-hole states in InAs/GaSb quantum wells 2001-12-15
21 Effects of doping in the active region of 630-nm band GaInP-AlGaInP tensile-strained quantum-well lasers
 1998-09-01
22 Theoretical analysis of 630-nm band GaInP-AlGaInP strained quantum-well lasers considering continuum states
 1997-03-01
23 Extremely small vertical far-field angle of InGaAs-AlGaAs quantum-well lasers with specially designed cladding structure
 1996-12-01
24 Semiconductor lasers with unconventional cladding structures for small beam divergence and low threshold current 1996-10-01
25 A novel cladding structure for semiconductor quantum-well lasers with small beam divergence and low threshold current
 1996-09-01
26 Theoretical investigation on semiconductor lasers with passive waveguides
 1996-01-01
27 INFLUENCE OF X-VALLEY SUPERLATTICE ON ELECTRON BLOCKING BY MULTIQUANTUM BARRIERS 1994-11-21
28 ENHANCEMENT OF ELECTRON-WAVE REFLECTION BY SUPERLATTICES WITH MULTIPLE STACKS OF MULTIQUANTUM BARRIERS 1994-02-28

Books

序號
No.		 標題
Title		 著作日期
Date
1 國立交通大學電子工程學系顏順通教師升等送審著作論文集 2008

Others

序號
No.		 標題
Title		 著作日期
Date
1 Analysis of GaAs/GaSb/GaAs structures under optical excitation considering surface states as an electron reservoir (vol 105, 103515, 2009)
 2009-06-15

Plan

序號
No.		 標題
Title		 著作日期
Date
1 以電晶體為基礎之高效率與高同調性兆赫輻射源 2013
2 以電晶體為基礎之高效率與高同調性兆赫輻射源 2012
3 室溫操作之高功率兆赫波源與光學元件之研究 2011
4 室溫兆赫輻射源的準光學功率合成與被動元件之研究 2010
5 室溫兆赫波物理、元件與技術(I)
 2009
6 半導體兆赫波主被動元件之研究
 2008
7 半導體兆赫波發射元件之研究(III)
 2007
8 半導體兆赫波發射元件之研究(II) 2006
9 半導體兆赫波發射元件之研究(I)
 2005
10 半導體兆赫波物理
 2004
11 氮基藍光雷射二極體之理論研究
 2003
12 中紅外線第二型/碎能隙量子井雷射之研究(I)
 2002
13 氧化光瞳面射型雷射之光性研究 2001
14 氧化光瞳面射型雷射之光性研究
 2001
15 次毫米波單載子共振態半導體雷射(III)
 2001

Proceedings Paper

序號
No.		 標題
Title		 著作日期
Date
1 Direct experimental evidence of the hole capture by resonant levels in boron doped silicon 2005-01-01
2 A self-consistent investigation of the semimetal-semiconductor transition in InAs/GaSb quantum wells under external electric fields
 2004-07-07
3 980 nm InGaAs/AlGaAs quantum well lasers with extremely low beam divergence 1996-01-01

Thesis

序號
No.		 標題
Title		 著作日期
Date
1 兆赫波波段之微共振腔研究 2014
2 以第一原理計算分析砷化鎵與磷化銦 紅外線雙聲子特徵譜線之研究
 2014
3 以模型化方式探討氮化鎵藍、綠光發光二極體效率下降之原因 2013
4 砷化鎵與磷化銦遠紅外光譜與聲子能態密度之研究
 2013
5 砷化鎵型電晶體於兆赫波至遠紅外波段輻射特性之研究 2013
6 以電激發砷化鎵塊材為兆赫波增益介質之研究 2013
7 半導體電激發光致冷元件與氮化鎵型發光二極體之理論模擬與分析 2013
8 半導體電激發光致冷元件之降溫極限的探討
 2011
9 室溫操作之pHEMT於兆赫波段之輻射特性 2011
10 整合光柵結構與電晶體的室溫兆赫波輻射源之研究 2011
11 以塑膠基板製作金屬網狀濾波器於兆赫波段下之研究
 2011
12 鍺中三價受子和雙共振腔於兆赫波源之理論研究
 2010
13 金屬光柵在不同偏振下穿透機制之研究
 2010
14 以含不對稱十字架孔洞金屬膜實現兆赫波段相位延遲器
 2010
15 兆赫波波段金屬網狀帶通濾波器之偏振性和相位差研究
 2010
16 以0.15μm pHEMT實現室溫兆赫波輻射源之研究
 2010
17 利用金屬孔洞電極提升發光二極體之外部量子效率
 2010
18 矽摻硼之阻擋雜質能帶紅外線偵測器之研究
 2009
19 異常光學穿透理論與應用之研究
 2009
20 兆赫波波段金屬網狀濾波器之研究
 2008
21 單軸應力下P型鍺之電性與兆赫波吸收頻譜之研究
 2008
22 氮化銦鎵/氮化鎵雷射二極體之理論研究
 2007
23 鍺摻雜鎵於電場下之兆赫波放射及吸收頻譜之研究
 2006
24 矽鍺磊晶成長於矽之淺受子能態之理論研究
 2005
25 砷化鎵/砷化鋁異質結構之Γ -Χ 反交叉能隙理論分析
 2004
26 P型氮化鋁鎵/氮化鎵超晶格之電性模擬
 2004
27 光子晶體利用完全相適吸收層之模擬分析
 2003
28 第二型碎能隙量子系統之電子結構與自旋相關傳輸之研究 2002
29 成長於矽基版之矽鍺磊晶層受子能態之理論研究 2002
30 面射型雷射光性之模擬 2002
31 半導體兆赫波源及電流震盪器之研究 2002
32 p型矽與矽鍺量子井遠紅外線元件之研究 2002
33 量子井雷射之研究 1995
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