國立交通大學機構典藏：研究人員|奈米電子與系統研究中心|趙天生

趙天生 Chao, Tien-Sheng

電子郵件／E-mail：tschao@mail.nctu.edu.tw

服務單位／Department：其他／奈米電子與系統研究中心

著作期間／Publish Period：1970-01-01 - 2014-09-01

著作統計／Statistics

Article（186）

Others（4）

Patents（1）

Plan（18）

Proceedings Paper（32）

Thesis（78）

Article

序號 No.	標題 Title	著作日期 Date
1	Ion-Bombarded and Plasma-Passivated Charge Storage Layer for SONOS-Type Nonvolatile Memory	2014-09-01
2	Improvement in pH Sensitivity of Low-Temperature Polycrystalline-Silicon Thin-Film Transistor Sensors Using H-2 Sintering	2014-03-01
3	Characterization of Ultra-Thin Ni Silicide Film by Two-Step Low Temperature Microwave Anneal	2014-01-01
4	Novel Ion Bombardment Technique for Doping Limited Cu Source in SiOx-Based Nonvolatile Switching Layer	2013-11-01
5	High-Performance Double-Layer Nickel Nanocrystal Memory by Ion Bombardment Technique	2013-10-01
6	Improved Rear-Side Passivation by Atomic Layer Deposition Al2O3/SiNx Stack Layers for High V-OC Industrial p-Type Silicon Solar Cells	2013-09-01
7	Low-Temperature Polycrystalline-Silicon Tunneling Thin-Film Transistors With MILC	2013-08-01
8	Channel Thickness Effect on High-Frequency Performance of Poly-Si Thin-Film Transistors	2013-08-01
9	High-kappa Eu2O3 and Y2O3 Poly-Si Thin-Film Transistor Nonvolatile Memory Devices	2013-07-01
10	Enhancement of Open-Circuit Voltage Using CF4 Plasma Treatment on Nitric Acid Oxides	2013-05-01
11	Impacts of Multiple Strain-Gate Engineering on a Zero-Temperature-Coefficient Point	2013-04-01
12	High-Performance Polyimide-Based ReRAM for Nonvolatile Memory Application	2013-01-01
13	Microwave Annealing of Phosphorus and Cluster Carbon Implanted (100) and (110) Si	2013-01-01
14	Al-SiO2-Y2O3-SiO2-poly-Si Thin-Film Transistor Nonvolatile Memory Incorporating a Y2O3 Charge Trapping Layer	2013-01-01
15	Polycrystalline silicon thin-film transistor with nickel-titanium oxide by sol-gel spin-coating and nitrogen implantation	2012-12-01
16	Low-Operating-Voltage Ultrathin Junctionless Poly-Si Thin-Film Transistor Technology for RF Applications	2012-11-01
17	A Novel Ion-Bombarded and Plasma-Passivated Charge Storage Layer for SONOS-Type Nonvolatile Memory	2012-10-01
18	Reliability Analysis of Symmetric Vertical-Channel Nickel-Salicided Poly-Si Thin-Film Transistors	2012-08-01
19	Temperature Dependence of Electron Mobility on Strained nMOSFETs Fabricated by Strain-Gate Engineering	2012-07-01
20	Hydrogen Instability Induced by Postannealing on Poly-Si TFTs	2012-06-01
21	Novel 2-Bit/Cell Wrapped-Select-Gate SONOS TFT Memory Using Source-Side Injection for NOR-Type Flash Array	2012-06-01
22	Electrical and reliability characteristics of polycrystalline silicon thin-film transistors with high-kappa Eu2O3 gate dielectrics	2012-04-23
23	Robust Data Retention and Superior Endurance of Silicon-Oxide-Nitride-Oxide-Silicon-Type Nonvolatile Memory with NH3-Plasma-Treated and Pd-Nanocrystal-Embedded Charge Storage Layer	2012-04-01
24	High-Performance Poly-Si Thin-Film Transistors With L-Fin Channels	2012-02-01
25	Impacts of the Underlying Insulating Layers on the MILC Growth Length and Electrical Characteristics	2012-02-01
26	Susceptor Coupling for the Uniformity and Dopant Activation Efficiency in Implanted Si Under Fixed-Frequency Microwave Anneal	2012-02-01
27	Oxide Thinning and Structure Scaling Down Effect of Low-Temperature Poly-Si Thin-Film Transistors	2012-01-01
28	Simultaneous Activation and Crystallization by Low-Temperature Microwave Annealing for Improved Quality of Amorphous Silicon Thin-Film Transistors	2012-01-01
29	Effects of Channel Width and Nitride Passivation Layer on Electrical Characteristics of Polysilicon Thin-Film Transistors	2011-11-01
30	Symmetric Vertical-Channel Nickel-Salicided Poly-Si Thin-Film Transistors With Self-Aligned Oxide Overetching Structures	2011-07-01
31	Amorphous-Layer Regrowth and Activation of P and As Implanted Si by Low-Temperature Microwave Annealing	2011-07-01
32	Characterization of Enhanced Stress Memorization Technique on nMOSFETs by Multiple Strain-Gate Engineering	2011-04-01
33	Channel Film Thickness Effect of Low-Temperature Polycrystalline-Silicon Thin-Film Transistors	2011-04-01
34	Gate-All-Around Junctionless Transistors With Heavily Doped Polysilicon Nanowire Channels	2011-04-01
35	Fabrication of sub-100-nm metal-oxide-semiconductor field-effect transistors with asymmetrical source/drain using I-line double patterning technique	2011-03-01
36	Novel Sub-10-nm Gate-All-Around Si Nanowire Channel Poly-Si TFTs With Raised Source/Drain	2011-02-01
37	High Tensile Stress with Minimal Dopant Diffusion by Low Temperature Microwave Anneal	2011-01-01
38	Fabrication and Characterization of High-k Dielectric Nickel Titanate Thin Films Using a Modified Sol-Gel Method	2011-01-01
39	High-Performance Poly-Si TFTs of Top-Gate with High-kappa Metal-Gate Combine the Laser Annealed Channel and Glass Substrate	2011-01-01
40	Impact of Strain Layer on Gate Leakage and Interface-State for nMOSFETs Fabricated by Stress-Memorization Technique	2011-01-01
41	Novel Symmetric Vertical-Channel Ni-Salicided Poly-Si Thin-Film Transistors With High ON/OFF-Current Ratio	2010-11-01
42	A Novel p-n-Diode Structure of SONOS-Type TFT NVM With Embedded Silicon Nanocrystals	2010-11-01
43	Formation and Structural Characterization of Cobalt Titanate Thin Films	2010-10-01
44	The Zero-Temperature-Coefficient Point Modeling of DTMOS in CMOS Integration	2010-10-01
45	High-Reliability Dynamic-Threshold Source-Side Injection for 2-Bit/Cell With MLC Operation of Wrapped Select-Gate SONOS in NOR-Type Flash Memory	2010-09-01
46	Characteristics of SONOS-Type Flash Memory With In Situ Embedded Silicon Nanocrystals	2010-08-01
47	Nanoscale p-MOS Thin-Film Transistor With TiN Gate Electrode Fabricated by Low-Temperature Microwave Dopant Activation	2010-05-01
48	Benefit of NMOS by Compressive SiN as Stress Memorization Technique and Its Mechanism	2010-04-01
49	The Characteristics of n- and p-Channel Poly-Si Thin-Film Transistors with Fully Ni-Salicided S/D and Gate Structure	2010-01-01
50	Physical Mechanism of High-Programming-Efficiency Dynamic-Threshold Source-Side Injection in Wrapped-Select-Gate SONOS for NOR-Type Flash Memory	2009-11-01
51	MILC-TFT With High-kappa Dielectrics for One-Time-Programmable Memory Application	2009-09-01
52	High-performance p-channel LTPS-TFT using HfO(2) gate dielectric and nitrogen ion implantation	2009-07-01
53	High-Speed Multilevel Wrapped-Select-Gate SONOS Memory Using a Novel Dynamic Threshold Source-Side-Injection (DTSSI) Programming Method	2009-06-01
54	Poly-Si Thin-Film Transistor Nonvolatile Memory Using Ge Nanocrystals as a Charge Trapping Layer Deposited by the Low-Pressure Chemical Vapor Deposition	2009-03-01
55	Vertical n-Channel Poly-Si Thin-Film Transistors With Symmetric S/D Fabricated by Ni-Silicide-Induced Lateral-Crystallization Technology	2009-03-01
56	Enhancement of Stress-Memorization Technique on nMOSFETs by Multiple Strain-Gate Engineering	2009-01-01
57	Electrical Characteristics of High Performance SPC and MILC p-Channel LTPS-TFT with High-kappa Gate Dielectric	2009-01-01
58	Characteristics of HfO(2)/Poly-Si Interfacial Layer on CMOS LTPS-TFTs With HfO(2) Gate Dielectric and O(2) Plasma Surface Treatment	2008-12-01
59	Positive Bias Temperature Instability (PBTI) Characteristics of Contact-Etch-Stop-Layer-Induced Local-Tensile-Strained HfO(2) nMOSFET	2008-12-01
60	Impacts of N-2 and NH3 Plasma Surface Treatments on High-Performance LTPS-TFT With High-kappa Gate Dielectric	2008-11-01
61	High-program/erase-speed SONOS with in situ silicon nanocrystals	2008-10-01
62	X-ray photoelectron spectroscopy energy band alignment of spin-on CoTiO(3) high-k dielectric prepared by sol-gel spin coating method	2008-09-01
63	Carrier transportation mechanism of the TaN/HfO(2)/IL/Si structure with silicon surface fluorine implantation	2008-07-01
64	SONOS memories with embedded silicon nanocrystals in nitride	2008-07-01
65	High-performance metal-induced laterally crystallized polycrystalline silicon p-channel thin-film transistor with TaN/HfO2 gate stack structure	2008-06-01
66	Reliability mechanisms of LTPS-TFT with HfO2 gate dielectric: PBTI, NBTI, and hot-carrier stress	2008-05-01
67	Impacts of fluorine ion implantation with low-temperature solid-phase crystallized activation on high-kappa LTPS-TFT	2008-02-01
68	Characteristics of PBTI and hot carrier stress for LTPS-TFT with high-kappa gate dielectric	2008-02-01
69	Current transport mechanism for HfO2 gate dielectrics with fluorine incorporation	2008-01-01
70	Optimized ONO thickness for multi-level and 2-bit/cell operation for wrapped-select-gate (WSG) SONOS memory	2008-01-01
71	Performance and interface characterization for contact etch stop layer-strained nMOSFET with HfO2 gate dielectrics under pulsed-IV measurement	2008-01-01
72	Performance enhancement by local strain in (110) channel n-channel metal-oxide-semicondiactor field-effect transistors on (111) substrate	2007-09-01
73	Characteristics of self-aligned Si/Ge T-gate poly-Si thin-film transistors with high ON/OFF current ratio	2007-05-01
74	Impact of channel dangling bonds on reliability characteristics of flash memory on poly-Si thin films	2007-04-01
75	Low-temperature polycrystalline silicon thin-film flash memory with hafnium silicate	2007-03-01
76	Systematical study of reliability issues in plasma-nitrided and thermally nitrided oxides for advanced dual-gate oxide p-channel metal-oxide-semiconductor field-effect transistors	2007-03-01
77	Highly reliable multilevel and 2-bit/cell operation of wrapped select gate (WSG) SONOS memory	2007-03-01
78	Impact of high-k offset spacer in 65-nm node SOI devices	2007-03-01
79	Performance enhancement for strained HfO(2) nMOSFET with contact etch stop layer (CESL) under pulsed-IV measurement	2007-01-01
80	Performance improvement of CoTiO3 high-k dielectrics with nitrogen incorporation	2007-01-01
81	High-performance HfO2 gate dielectrics fluorinated by postdeposition CF4 plasma treatment	2007-01-01
82	Si nanocrystal memory devices self-assembled by in situ rapid thermal annealing of ultrathin a-Si on SiO2	2007-01-01
83	High-kappa material sidewall with source/drain-to-gate non-overlapped structure for low standby power applications	2006-11-01
84	The impact of deep Ni salicidation and NH3 plasma treatment on nano-SOI FinFETs	2006-10-01
85	Fringing electric field effect on 65-nm-node fully depleted silicon-on-insulator devices	2006-09-01
86	Improving electrical characteristics of high-k NiTiO dielectric with nitrogen ion implantation.	2006-09-01
87	Prospect of cobalt-mix-tetraethoxysilane method on localized lateral growth of carbon nanotubes for both p- and n-type field effect transistors	2006-09-01
88	Suppression of interfacial reaction for HfO2 on silicon by pre-CF4 plasma treatment	2006-08-14
89	A carbon nanotube field effect transistor with tunable conduction-type by electrostatic effects	2006-07-01
90	High-performance poly-Si TFTs with fully Ni-self-aligned silicided S/D and gate structure	2006-04-01
91	Crystal orientation and nitrogen effects on the carrier mobility of p-type metal oxide semiconductor field effect transistor with ultra thin gate dielectrics	2006-03-01
92	Complementary carbon nanotube-gated carbon nanotube thin-film transistor	2006-02-27
93	Reduction of donor-like interface traps of n-type metal-oxide-semiconductor field-effect-transistors using hydrogen-annealed wafer and in-situ HF-vapor treatment	2006-01-01
94	High voltage applications and NBTI effects of DT-pMOSFETS with reverse Schottky substrate contacts	2005-07-01
95	Mobility enhancement in local strain channel nMOSFETs by stacked a-Si/poly-Si gate and capping nitride	2005-04-01
96	Effects of metallic contaminants on the electrical characteristics of ultrathin gate oxides	2005-01-01
97	Localized lateral growth of single-walled carbon nanotubes for field-effect transistors by a cobalt-mix-TEOS method	2005-01-01
98	CoTiO3 high-kappa, dielectrics on HSG for DRAM applications	2004-12-01
99	Suppression of boron penetration in P+-poly-SiGe gate p-channel metal-oxide-semiconductor field-effect transistor using NH3-nitrided and N2O-grown gate oxides	2004-11-01
100	Suppression of the floating-body effect in poly-Si thin-film transistors with self-aligned Schottky barrier source and ohmic body contact structure	2004-09-01
101	Mobility enhancement of MOSFETs on p-silicon (111) with in situ HF-Vapor. pre-gate oxide cleaning	2004-09-01
102	Novel one-step aqueous solutions to replace pregate oxide cleans	2004-08-01
103	Hot carrier degradations of dynamic threshold silicon on insulator p-type metal-oxide-semiconductor field effect transistors	2004-04-01
104	High-voltage and high-temperature applications of DTMOS with reverse Schottky barrier on substrate contacts	2004-02-01
105	Simultaneous quality improvement of tunneling- and interpoly-oxides of nonvolatile memory devices by NH3 and N2O nitridation	2003-11-01
106	The effects of dielectric type and thickness on the characteristics of dynamic threshold metal oxide semiconductor transistors	2003-09-01
107	A one-step single-cleaning solution for CMOS processes	2003-09-01
108	Ultrathin zirconium silicate films deposited on Si(100) using Zr(O(i)-Pr)(2)(thd)(2), Si(O(t)-Bu)(2)(thd)(2), and nitric oxide	2003-07-01
109	Structure and thermal stability of MOCVD ZrO2 films on Si (100)	2003-04-01
110	Effect of CF4 plasma pretreatment on low temperature oxides	2002-12-01
111	Impacts of gate structure on dynamic threshold SOI nMOSFETs	2002-08-01
112	Improvement of low-temperature gate dielectric formed in N2O plasma by an additional CF4 pretreatment process	2002-07-01
113	Ultra-shallow junction formation using implantation through capping nitride layer on source/drain extension	2002-07-01
114	Physical and electrical characterization of ZrO(2) gate insulators deposited on Si(100) using Zr(O(i)-Pr)(2)(thd)(2) and O(2)	2002-06-01
115	Performance evaluation of cleaning solutions enhanced with tetraalkylammonium hydroxide substituents for post-CMP cleaning on poly-Si film	2002-06-01
116	Performance improvement of nickel salicided n-type metal oxide semiconductor field effect transistors by nitrogen implantation	2002-04-01
117	Reduction of nickel-silicided junction leakage by nitrogen ion implantation	2002-02-01
118	A practical implementation of parallel dynamic load balancing for adaptive computing in VLSI device simulation	2002-01-01
119	Nitrogen implantation and in situ HF vapor clean for deep submicrometer n-MOSFETs	2002-01-01
120	Comparison of novel cleaning solutions, with various chelating agents for post-CMP cleaning on poly-Si film	2001-11-01
121	Electrical characteristics of thin cerium oxide film on silicon substrate by reactive DC sputtering	2001-09-01
122	Improved low temperature characteristics of p-channel MOSFETs with Si1-xGex raised source and drain	2001-08-01
123	High quality interpoly dielectrics deposited on the nitrided-polysilicon for nonvolatile memory devices	2001-07-01
124	X-ray photoelectron spectroscopy of gate-quality silicon oxynitride films produced by annealing plasma-nitrided Si(100) in nitrous oxide	2001-07-01
125	One-step cleaning solution to replace the conventional RCA two-step cleaning recipe for pregate oxide cleaning	2001-06-01
126	Electrical properties of shallow p(+)-n junction using boron-doped Si1-xGex layer deposited by ultrahigh vacuum chemical molecular epitaxy	2001-05-01
127	Characterization of ultrathin oxynitride (18-21 angstrom) gate dielectrics by NH3 nitridation and N2O RTA treatment	2001-05-01
128	Comparison of ultrathin CoTiO3 and NiTiO3 high-k gate dielectrics	2001-03-15
129	High-k cobalt-titanium oxide dielectrics formed by oxidation of sputtered Co/Ti or Ti/Co films	2001-03-05
130	Nano-oxidation of silicon nitride films with an atomic force microscope: Chemical mapping, kinetics, and applications	2001-02-15
131	High quality interpoly-oxynitride grown by NH3 nitridation and N2O RTA treatment	2001-02-01
132	The effects of super-steep-retrograde indium channel profile on deep submicron n-channel metal-oxide-semiconductor field-effect transistor	2001-01-01
133	High-performance and high-reliability 80-nm gate-length DTMOS with indium super steep retrograde channel	2000-12-01
134	Characteristics of TEOS polysilicon oxides: Improvement by CMP and high temperature RTA N-2/N2O annealing	2000-11-01
135	Optimum conditions for novel one-step cleaning method for pre-gate oxide cleaning using robust design methodology	2000-10-01
136	High quality ultrathin CoTiO3 high-k gate dielectrics	2000-09-01
137	Reduced reverse narrow channel effect in thin SOI nMOSFETs	2000-09-01
138	An anomalous crossover in Vth roll-off for indium-doped nMOSFETs	2000-09-01
139	Plasma-process-induced damage in sputtered TiN metal-gate capacitors with ultrathin nitrided oxides	2000-08-01
140	Characteristics of polysilicon oxides combining N2O nitridation and CMP processes	2000-08-01
141	Robust ultrathin oxynitride dielectrics by NH3 nitridation and N2O RTA treatment	2000-08-01
142	Plasma-induced charging damage in ultrathin (3-nm) gate oxides	2000-07-01
143	Novel cleaning solutions for polysilicon film post chemical mechanical polishing	2000-07-01
144	Improvement of polysilicon oxide integrity using NF3-annealing	2000-06-15
145	Low contact resistance of poly-plug structure by in-situ HF-vapour cleaning	2000-04-13
146	High performance 0.1 mu m dynamic threshold MOSFET using indium channel implantation	2000-03-01
147	Nanometer-scale conversion of Si3N4 to SiOx	2000-01-17
148	The combined effects of nitrogen implantation at S/D extension and N2O oxide on 0.18 mu m N- and P-metal oxide field effect transistors (MOSFETs)	1999-12-01
149	Improvement of junction leakage of nickel silicided junction by a Ti-capping layer	1999-11-01
150	A novel Si-B diffusion source for p(+)-poly-Si gate	1999-10-01
151	A comprehensive study of hot carrier stress-induced drain leakage current degradation in thin-oxide n-MOSFET's	1999-09-01
152	Enhancement of integrity of polysilicon oxide by using a combination of N2O nitridation and CMP process	1999-05-01
153	The effects of shallow germanium halo doping on N-channel metal oxide semiconductor field effect transistors	1999-01-15
154	Improvement of reliability of metal-oxide semiconductor field-effect transistors with N2O nitrided gate oxide and N2O polysilicon gate reoxidation	1998-10-01
155	Improving radiation hardness of EEPROM/flash cell by N2O annealing	1998-07-01
156	Characterization of polysilicon oxides thermally grown and deposited on the polished polysilicon films	1998-04-01
157	Evaluation of plasma charging damage in ultrathin gate oxides	1998-03-01
158	Effects of N2O-annealed sacrificial oxide on the short-channel effects of nMOSFETs	1998-02-19
159	Suppression of boron penetration in p(+) polysilicon gate using Si-B diffusion source	1998-01-08
160	A study on the radiation hardness of flash cell with horn-shaped floating-gate	1997-09-01
161	Effects of floating-gate doping concentration on flash cell performance	1997-08-01
162	Improved flash cell performance by N2O annealing of interpoly oxide	1997-07-01
163	Suppression of boron penetration by using inductive-coupling-nitrogen-plasma in stacked amorphous/polysilicon gate structure	1997-06-19
164	A novel planarization of oxide-filled shallow-trench isolation	1997-01-01
165	Suppression of boron penetration in BF2+-implanted poly-Si gate	1996-12-01
166	Mechanism of nitrogen coimplant for suppressing boron penetration in p(+)-polycrystalline silicon gate of p metal-oxide semiconductor field effect transistor	1996-09-16
167	Nitridization of the stacked poly-Si gate to suppress the boron penetration in pMOS	1996-07-01
168	POST-POLYSILICON GATE-PROCESS-INDUCED DEGRADATION ON THIN GATE OXIDE	1995-11-01
169	ELLIPSOMETRIC MEASUREMENTS AND ITS ALIGNMENT - USING THE INTENSITY RATIO TECHNIQUE	1995-09-01
170	EFFECTS OF POSTETCHING TREATMENTS ON ELECTRICAL CHARACTERISTICS OF THERMAL OXIDES ON REACTIVE-ION-ETCHED SILICON SUBSTRATES	1995-09-01
171	NITRIDATION OF THE STACKED POLY-SI GATE TO SUPPRESS THE BORON PENETRATION IN PMOS	1995-06-01
172	IMPROVEMENT OF THIN OXIDES THERMALLY GROWN ON THE REACTIVE-ION-ETCHED SILICON SUBSTRATES	1995-05-01
173	FOURIER-TRANSFORM INFRARED SPECTROSCOPIC STUDY OF OXIDE-FILMS GROWN IN PURE N2O	1995-05-01
174	THIN POLYOXIDE ON THE TOP OF POLY-SI GATE TO SUPPRESS BORON PENETRATION FOR PMOS	1995-05-01
175	INHIBITION OF BIRDS BEAK IN LOCOS BY NEW BUFFER N2O OXIDE	1995-02-16
176	MULTIPLE-ANGLE INCIDENT ELLIPSOMETRY MEASUREMENT ON LOW-PRESSURE CHEMICAL-VAPOR-DEPOSITED AMORPHOUS-SILICON AND POLYSILICON	1994-08-01
177	MEASUREMENT OF THIN OXIDE-FILMS ON IMPLANTED SI-SUBSTRATE BY ELLIPSOMETRY	1994-04-01
178	CHARACTERIZATIONS OF OXIDE GROWN BY N2O	1993-10-01
179	CHARACTERIZATION OF SEMIINSULATING POLYCRYSTALLINE SILICON PREPARED BY LOW-PRESSURE CHEMICAL-VAPOR-DEPOSITION	1993-09-01
180	THICKNESS DETERMINATION OF POLY-SI/POLY-OXIDE POLY-SI/SIO2/SI STRUCTURE BY ELLIPSOMETER	1993-06-24
181	THE REFRACTIVE-INDEX OF INP AND ITS OXIDE MEASURED BY MULTIPLE-ANGLE INCIDENT ELLIPSOMETRY	1993-05-15
182	A STUDY OF THE INTERFACIAL LAYER OF AL AND AL(1-PERCENT SI)-SI CONTACTS USING A ZERO-LAYER ELLIPSOMETRY MODEL	1992-11-01
183	POLY-OXIDE POLY-SI/SIO2/SI STRUCTURE FOR ELLIPSOMETRY MEASUREMENT	1992-06-04
184	MEASUREMENT OF ULTRATHIN (LESS-THAN-100-A) OXIDE-FILMS BY MULTIPLE-ANGLE INCIDENT ELLIPSOMETRY	1991-06-01
185	ELLIPSOMETRY MEASUREMENT OF THE COMPLEX REFRACTIVE-INDEX AND THICKNESS OF POLYSILICON THIN-FILMS	1990-02-01
186	Low-temperature poly-Si nanowire junctionless devices with gate-all-around TiN/Al2O3 stack structure using an implant-free technique	1970-01-01

Others

序號 No.	標題 Title	著作日期 Date
1	Low-Temperature Microwave Annealing Processes for Future IC Fabrication-A Review	2014-03-01
2	A NOVEL PLANARIZATION OF TRENCH ISOLATION USING POLYSILICON REFILL AND ETCHBACK OF CHEMICAL-MECHANICAL POLISH	1995-10-01
3	CROSSOVER PHENOMENON IN OXIDATION RATES OF THE (110) AND (111) ORIENTATIONS OF SILICON IN N2O	1995-03-01
4	SUPERIOR DAMAGE-IMMUNITY OF THIN OXIDES THERMALLY GROWN ON REACTIVE-ION-ETCHED SILICON SURFACE IN N2O AMBIENT	1994-05-01

Patents

序號 No.	標題 Title	著作日期 Date
1	具有奈米線通道之半導體元件的製程及藉此形成之半導體元件	2013-07-01

Plan

序號 No.	標題 Title	著作日期 Date
1	應用於三維積體電路與系統面板之新穎奈米電子元件開發	2014
2	應用於三維結構電路整合之薄膜電晶體	2013
3	應用於三維結構電路整合之薄膜電晶體	2012
4	應用於三維結構電路整合之薄膜電晶體	2011
5	內嵌矽奈米點之SONOS記憶體元件	2010
6	內嵌矽奈米點之SONOS記憶體元件	2009
7	內嵌矽奈米點之SONOS記憶體元件	2008
8	氣化氫氟酸在奈米金氧半電晶體之應用及其設備之開發(III)	2007
9	氣化氫氟酸在奈米金氧半電晶體之應用及其設備之開發(II)	2006
10	新型65奈米具32奈米通道長度之全空乏絕緣層上矽元件	2006
11	高電容比值之矽可變電容二極體	2005
12	氣化氫氟酸在奈米金氧半電晶體之應用及其設備之開發(I)	2005
13	製備合成氧化物在互補式金氧半閘極介電層及自旋電元件應用之研究(III)	2004
14	製備合成氧化物在互補式金氧半閘極介電層及自旋電元件應用之研究(II)	2003
15	高效能動態起始電壓絕緣層上矽元件	2003
16	製備合成氧化物在互補式金氧半閘極介電層及自旋電元件應用之研究	2002
17	一種新穎絕緣層上矽動態起啟電壓金氧半元件	2002
18	利用MOCVD製備高介電閘極材料之研究	2001

Proceedings Paper

序號 No.	標題 Title	著作日期 Date
1	Formation of inverted-pyramid structure by modifying laser processing parameters and acid etching time	2011-01-01
2	A simple method for sub-100 nm pattern generation with I-line double-patterning technique	2010-05-01
3	Novel Field-Induced Gray-Level Selective Patterning of Self-Assembled Aminosilane Monolayer on SiO(2) Surfaces by Scanning Probe Bond-Breaking Lithography	2009-04-01
4	Impacts of a buffer layer and hydrogen-annealed wafers on the performance of strained-channel nMOSFETs with SiN-capping layer	2008-10-01
5	Improvement on performance and reliability of TaN/HfO2 LTPS-TFTs with fluorine implantation	2008-03-01
6	Trapping and de-trapping characteristics in PBTI and dynamic PBTI between HfO2 and HfSiON gate dielectrics	2008-01-01
7	The polarity dependence of ONO thickness for wrapped-select-gate (WSG) SONOS memory	2008-01-01
8	Scanning probe lithography of self-assembled N-(2-aminoethyl)-3-aminopropyltrimethoxysilane monolayers on SiO2 surface	2007-09-01
9	Impacts of nitric acid oxidation on low-temperature polycrystalline silicon TFTs with high-k gate dielectric	2007-01-01
10	Mobility improvement of HfO2 LTPS-TFTs with nitrogen implanataion	2007-01-01
11	Gray-level patterning of gold nanoparticles with scanning probe lithography of self-assembly monolayer	2007-01-01
12	A highly reliable multi-level and 2-bit/cell operation of wrapped-select-gate (WSG) SONOS memory with optimized ONO thickness	2007-01-01
13	Novel method of converting metallic-type carbon nanotubes to semiconducting-type carbon nanotube field-effect transistors	2006-04-01
14	Selective deposition of gold particles on dip-pen nanolithography patterns on silicon dioxide surfaces	2006-04-01
15	2-bit poly-Si-TFT nonvolatile memory using hafnium oxide, hafnium silicate and zirconium silicate	2005-01-01
16	Characterization of interfacial layer of ultrathin Zr silicate on Si(100) using spectroscopic ellipsometry and HRTEM	2004-05-01
17	NBTI effects of pMOSFETs with different nitrogen dose imlantation	2004-01-01
18	Impact of nitrogen and/or fluorine implantation on deep-submicron Co-salicide process	2002-08-01
19	Numerical simulation of quantum effects in high-k gate dielectric MOS structures using quantum mechanical models	2002-08-01
20	A domain partition approach to parallel adaptive simulation of dynamic threshold voltage MOSFET	2002-08-01
21	Characterization of thin ZrO2 films deposited using Zr(O '-Pr)(2)(thd)(2) and O-2 on Si(100)	2002-05-01
22	Process-related reliability issues toward sub-100 nm device regime	2002-01-01
23	A new parallel adaptive finite volume method for the numerical simulation of semiconductor devices	2001-12-15
24	Plasma process induced damage in sputtered TiN metal gate capacitors with ultra-thin nitrided oxide	2000-01-01
25	Improvement of ultra-thin 3.3 nm thick oxide for co-salicide process using NF3 annealed poly-gate	1999-04-01
26	An accurate hot carrier reliability monitor for deep-submicron shallow S/D junction thin gate oxide n-MOSFET's	1999-01-01
27	Voltage scaling and temperature effects on drain leakage current degradation in a hot carrier stressed n-MOSFET	1998-01-01
28	A novel shallow trench isolation technique	1997-03-01
29	Suppression of boron penetration in P+-poly-Si gate metal-oxide-semiconductor transistor using nitrogen implantation	1997-03-01
30	Performance and reliability evaluations of P-channel flash memories with different programming schemes	1997-01-01
31	Low temperature (850 degrees C) two-step N2O annealed thin gate oxides	1996-01-01
32	SUPPRESSION OF BORON PENETRATION IN PMOS BY USING BRIDE GETTERING EFFECT IN POLY-SI GATE	1995-02-01

Thesis

序號 No.	標題 Title	著作日期 Date
1	應力對具自我對準栓塞式閘極結構之新穎閘極環繞式多晶矽奈米通道搭配抬升式源極/汲極薄膜電晶體影響之研究	2014
2	奈米矽電晶體應變效應之研究	2014
3	金屬誘發側向結晶之底部閘極多晶矽薄膜非揮發性記憶體研究	2013
4	新穎垂直通道無接面薄膜電晶體之模擬研究	2013
5	太陽能電池轉換效率改善之研究	2013
6	非對稱金氧半場效電晶體及無接面多晶矽薄膜電晶體的研究	2013
7	無接面奈米線場效電晶體之研究	2013
8	雙閘極多晶矽牛角型奈米線感測器之製程與應用	2013
9	具抬升式多晶矽奈米線穿隧式薄膜電晶體之研究	2013
10	藉由單分子層摻雜技術形成新穎的無接面多晶矽薄膜電晶體之研究	2013
11	用於生物感測的新型多晶矽薄膜電晶體之研究	2013
12	多重應力閘極之新穎應力記憶技術製作在n型金氧半場效電晶體之研究	2012
13	鍺基紅外光偵測器應用於光連接系統之設計與建模	2012
14	摻雜不同濃度的硼在金屬誘發結晶前對矽奈米晶SONOS記憶體的影響	2012
15	氨電漿對下閘極多晶矽薄膜電晶體之影響	2012
16	前表面場與氧化鋁鈍化對於交指背接觸電極矽晶太陽能電池之研究	2012
17	單分子層摻雜的研究及其應用	2012
18	具不同通道結構薄膜電晶體 SONOS記憶體之研究	2012
19	奈米線薄膜電晶體元件之研究	2011
20	低溫微波退火應用之研究	2011
21	氮化矽的氫與其應力對電晶體之影響	2011
22	新穎垂直通道薄膜電晶體之研究	2011
23	鎳金屬誘發側向結晶垂直通道低溫複晶矽薄膜電晶體之研究	2011
24	以雙閘極多晶矽薄膜電晶體作為酸鹼感測器之研究	2011
25	表面形態及結晶條件對薄膜電晶體與非揮發性記憶體之影響	2011
26	具矽奈米晶體捕捉層之底部閘極多晶矽薄膜非揮發性記憶體元件	2011
27	具有新穎結構非揮發性記憶體	2010
28	具粗糙穿隧氧化層及阻障氧化層SONOS記憶體之研究	2010
29	動態臨限電壓場效電晶體之零溫度係數點模型研究	2010
30	利用尖角效應提高寫入電場於薄膜電晶體之記憶體元件應用	2010
31	動態臨界電晶體之精簡物理模型與應用	2010
32	隱藏式選擇性閘極結構之薄膜電晶體記憶體元件研究	2010
33	經由微波退火形成極薄且均勻厚度的鎳矽化物研究	2010
34	具高介電常數閘極絕緣層之低溫複晶矽薄膜電晶體之研究	2009
35	具不同應力及高介電層金氧半場效電晶體之可靠度研究	2009
36	利用接觸蝕刻停止層以及下凹式源極和汲極對電晶體載子遷移率提升之研究	2009
37	利用凝膠轉塗佈法製備高介電常數鈦酸鎳閘極介電質層於複晶矽薄膜電晶體之研究	2008
38	具高介電常數閘極絕緣層之低溫多晶矽薄膜電晶體可靠度研究	2008
39	具新穎應力記憶技術之金氧半場效電晶體	2008
40	超薄氧化鉿及氧化鋯鉿介電層之可靠度研究	2008
41	應用新穎低溫微波退火製程製作奈米級薄膜電晶體之分析研究	2008
42	利用多層閘極之增強型應力記憶技術製作在n型金氧半場效電晶體之研究	2007
43	閘極介電質氧化鉿與氮氧矽鉿之可靠度研究	2007
44	具分離控制閘之隱藏式選擇性SONOS NAND記憶體元件之研究	2007
45	應用高介電常數絕緣層與矽奈米微晶粒於超大型積體電路元件之研究	2007
46	氧化鉿閘極介電層之氟鈍化製程與應力工程的研究	2007
47	先進金氧半場效電晶體閘極工程對改善元件特性及可靠度之研究	2007
48	具高介電常數閘極絕緣層的低溫多晶矽薄膜電晶體之研究	2007
49	利用溶膠旋轉塗佈法備製鈦酸鈷高介電層	2007
50	運用掃描式探針微影技術研發製作矽質奈米元件結構	2006
51	氟氮離子摻雜應用於金屬閘極與高介電常數絕緣層之低溫多晶矽薄膜電晶體	2006
52	氮化矽層內嵌奈米矽晶體之SONOS型記憶體	2006
53	不同高介電常數與傳統低溫介電層應用於低溫複晶矽薄膜電晶體之比較	2006
54	區域性應力通道之氧化鉿n型金氧半場效電晶體特性及可靠度之改善	2006
55	高介電常數材料之低溫複晶矽快閃記憶體的研究	2005
56	新型低溫複晶矽非揮發性奈米鍺晶體捕獲儲存層記憶體元件	2005
57	新穎堆疊矽/鍺T型閘極複晶矽薄膜電晶體	2005
58	n型通道與p型通道完全鎳自我對準矽化源/汲與閘極複晶矽薄膜電晶體之研究	2005
59	矽奈米元件量子修正理論暨模式應用比較之研究	2005
60	新式奈米碳管電晶體製造與特性研究	2005
61	在(111)晶面基板上利用區域性應力通道提高電子遷移率之n型金氧半場效電晶體	2004
62	完全鎳自我對準矽化源/汲與閘極之薄膜電晶體研究	2004
63	Study on the reliability of pMOSFETs with different nitrogen and fluorine implantation dosages	2004
64	一種具有奈米線通道的新穎多晶矽薄膜電晶體製作與特性之研究	2004
65	智慧型計算在低雜訊放大器積體電路設計最佳化應用之研究	2004
66	氣態氫氟酸清洗閘極氧化層及堆疊式閘極在不同晶面上之研究	2004
67	動態臨界電壓金氧半電晶體之特性及可靠性研究	2004
68	利用氮處理改善鈷鈦酸高介電閘極氧化層	2003
69	利用區域性應力通道提高電子遷移率之n型金氧半場效電晶體	2003
70	量子修正模式在奈米級金屬氧化物半導體元件特性模擬之研究	2003
71	複晶矽鍺閘極之負偏壓溫度不穩定性研究	2003
72	超薄先進閘極介電層之成長與特性研究：氮氧化矽與氧化鋯及其矽酸鹽	2002
73	先進深次微米金氧半場效電晶體基極與閘極工程之研究	2000
74	閘極結構對矽在絕緣層上動態啟始電壓N型金氧半場效電晶體的影響	2000
75	study of indium super-steep-retrograde for deep submicron nMOSFET	1999
76	氫氟酸氣態清洗及氮摻雜於閘極氧化層與複晶矽氧化層之應用	1999
77	製程參數對複晶矽TEOS介電層特性之影響	1998
78	橢圓儀在半導體薄膜測量上之應用研究	1991

趙天生 Chao, Tien-Sheng

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人文社會學院

工學院

生物科技學院

光電學院

客家文化學院

理學院

資訊學院

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科技法律學院