國立交通大學機構典藏：研究人員|平面顯示技術碩士學位學程|郭浩中

郭浩中 Kuo, Hao-Chung

電子郵件／E-mail：hckuo@faculty.nctu.edu.tw

服務單位／Department：工學院／平面顯示技術碩士學位學程

著作期間／Publish Period：1994-01-01 - 2014-11-11

著作統計／Statistics

Article（399）

Books（1）

Others（6）

Patents（37）

Plan（28）

Proceedings Paper（146）

Thesis（164）

Article

序號 No.	標題 Title	著作日期 Date
1	Efficiency improvement of GaN-based ultraviolet light-emitting diodes with reactive plasma deposited AlN nucleation layer on patterned sapphire substrate	2014-09-16
2	Toward Omnidirectional Light Absorption by Plasmonic Effect for High-Efficiency Flexible Nonvacuum Cu(In,Ga)Se-2 Thin Film Solar Cells	2014-09-01
3	Fabrication and characterization of back-side illuminated InGaN/GaN solar cells with periodic via-holes etching and Bragg mirror processes	2014-08-25
4	Design and fabrication of a InGaN vertical-cavity surface-emitting laser with a composition-graded electron-blocking layer	2014-08-01
5	Performance enhancement of GaN-based flip-chip ultraviolet light-emitting diodes with a RPD AlN nucleation layer on patterned sapphire substrate	2014-08-01
6	Superhydrophobic, antiadhesive, and antireflective surfaces mediated by hybrid biomimetic salvinia leaf with moth-eye structures	2014-08-01
7	A Highly Efficient Hybrid GaAs Solar Cell Based on Colloidal-Quantum-Dot-Sensitization	2014-07-18
8	High performance 380-nm ultraviolet light-emitting-diodes with 3% efficiency droop by using free-standing GaN substrate manufacturing from GaAs substrate	2014-07-07
9	High density GaN/AlN quantum dots for deep UV LED with high quantum efficiency and temperature stability	2014-06-05
10	Polarization ratio enhancement of a-plane GaN light emitting diodes by asymmetric two-dimensional photonic crystals	2014-05-21
11	High-Efficiency and Crack-Free InGaN-Based LEDs on a 6-inch Si (111) Substrate With a Composite Buffer Layer Structure and Quaternary Superlattices Electron-Blocking Layers	2014-05-01
12	Natural substrate lift-off technique for vertical light-emitting diodes	2014-04-01
13	Enhanced light harvesting of nitride-based nanopillars covered with ZnO using indium-tin oxide nanowhiskers	2014-04-01
14	The Effect of CdS QDs Structure on the InGaP/GaAs/Ge Triple Junction Solar Cell Efficiency	2014-03-01
15	Improvement of emission uniformity by using micro-cone patterned PDMS film	2014-02-24
16	Flexible-textured polydimethylsiloxane antireflection structure for enhancing omnidirectional photovoltaic performance of Cu(In,Ga)Se-2 solar cells	2014-02-10
17	Hole injection and electron overflow improvement in InGaN/GaN light-emitting diodes by a tapered AlGaN electron blocking layer	2014-01-13
18	Performance of GaN-based light-emitting diodes fabricated using GaN epilayers grown on silicon substrates	2014-01-13
19	White light emitting diodes with enhanced CCT uniformity and luminous flux using ZrO2 nanoparticles	2014-01-01
20	Enabling Lambertian-Like Warm White Organic Light-Emitting Diodes with a Yellow Phosphor Embedded Flexible Film	2014-01-01
21	Device Modeling of the Performance of Cu(In,Ga)Se-2 Solar Cells with V-Shaped Bandgap Profiles	2014-01-01
22	Efficiency and Droop Improvement in GaN-Based High-Voltage Flip Chip LEDs	2014-01-01
23	Waveguide based energy transfer with gold nanoclusters for detection of hydrogen peroxide	2014-01-01
24	Investigation and Comparison of the GaN-Based Light-Emitting Diodes Grown on High Aspect Ratio Nano-Cone and General Micro-Cone Patterned Sapphire Substrate	2013-12-01
25	Room temperature ultraviolet GaN metal-coated nanorod laser	2013-11-04
26	Advantages of Blue LEDs With Graded-Composition AlGaN/GaN Superlattice EBL	2013-11-01
27	An Investigation of the Optical Analysis in White Light-Emitting Diodes With Conformal and Remote Phosphor Structure	2013-11-01
28	Electrically driven green, olivine, and amber color nanopyramid light emitting diodes	2013-10-07
29	Improving the Angular Color Uniformity of Hybrid Phosphor Structures in White Light-Emitting Diodes	2013-10-01
30	Effect of the Thermal Characteristics of Phosphor for the Conformal and Remote Structures in White Light-Emitting Diodes	2013-10-01
31	A look into the origin of shunt leakage current of Cu(In,Ga)Se-2 solar cells via experimental and simulation methods	2013-10-01
32	Improving efficiency of InGaN/GaN multiple quantum well solar cells using CdS quantum dots and distributed Bragg reflectors	2013-10-01
33	The metal grating design of plasmonic hybrid III-V/Si evanescent lasers	2013-08-26
34	Multi-functional stacked light-trapping structure for stabilizing and boosting solar-electricity efficiency of hydrogenated amorphous silicon solar cells	2013-08-12
35	Distance dependence of energy transfer from InGaN quantum wells to graphene oxide	2013-08-01
36	Non-antireflective Scheme for Efficiency Enhancement of Cu(In,Ga)Se-2 Nanotip Array Solar Cells	2013-08-01
37	Projected Efficiency of Polarization-Matched p-InxGa1-xN/i-InyGa1-yN/n-GaN Double Heterojunction Solar Cells	2013-07-01
38	Enhanced Luminous Efficiency of WLEDs Using a Dual-Layer Structure of the Remote Phosphor Package	2013-06-15
39	The site-selective excitation and the dynamical electron-lattice interaction on the luminescence of YBO3: Sb3+	2013-05-01
40	Efficiency and Droop Improvement in Hybrid Warm White LEDs Using InGaN and AlGaInP High-Voltage LEDs	2013-04-01
41	Enhanced Light Output Power and Growth Mechanism of GaN-Based Light-Emitting Diodes Grown on Cone-Shaped SiO2 Patterned Template	2013-04-01
42	High thermal stability of correlated color temperature using current compensation in hybrid warm white high-voltage LEDs	2013-03-11
43	Microstructure and magnetic properties of oxidized titanium nitride thin films in situ grown by pulsed laser deposition	2013-02-20
44	Optical coupling from InGaAs subcell to InGaP subcell in InGaP/InGaAs/Ge multi-junction solar cells	2013-01-14
45	Large-area ultraviolet GaN-based photonic quasicrystal laser with high-efficiency green color emission of semipolar {10-11} In0.3Ga0.7N/GaN multiple quantum wells	2013-01-07
46	Efficient energy transfer from InGaN quantum wells to Ag nanoparticles	2013-01-01
47	Enhanced broadband and omnidirectional performance of Cu(In,Ga)Se-2 solar cells with ZnO functional nanotree arrays	2013-01-01
48	Dandelion-shaped nanostructures for enhancing omnidirectional photovoltaic performance	2013-01-01
49	Effect of the surface-plasmon-exciton coupling and charge transfer process on the photoluminescence of metal-semiconductor nanostructures	2013-01-01
50	Resonant-Enhanced Full-Color Emission of Quantum-Dot-Based Display Technology Using a Pulsed Spray Method	2012-12-19
51	Efficiency and droop improvement in green InGaN/GaN light-emitting diodes on GaN nanorods template with SiO2 nanomasks	2012-12-03
52	Optimization of the Single-Phased White Phosphor of Li2SrSiO4:Eu2+, Ce3+ for Light-Emitting Diodes by Using the Combinatorial Approach Assisted with the Taguchi Method	2012-12-01
53	Observation of unusual optical transitions in thin-film Cu(In,Ga)Se-2 solar cells	2012-11-05
54	Modeling and Optimization of Sub-Wavelength Grating Nanostructures on Cu(In,Ga)Se-2 Solar Cell	2012-10-01
55	Enhancement of power conversion efficiency in GaAs solar cells with dual-layer quantum dots using flexible PDMS film	2012-09-01
56	A New Parallel Domain-Decomposed Chebyshev Collocation Method for Atmospheric and Oceanic Modeling	2012-08-01
57	The Influence of the Thermal Effect on CdSe/ZnS Quantum Dots in Light-Emitting Diodes	2012-07-15
58	Light Extraction Enhancement of GaN-Based Light-Emitting Diodes Using Crown-Shaped Patterned Sapphire Substrates	2012-07-15
59	Improvement in uniformity of emission by ZrO2 nano-particles for white LEDs	2012-07-05
60	UV-Visible Light-Trapping Structure of Loosely Packed Submicrometer Silica Sphere for Amorphous Silicon Solar Cells	2012-07-01
61	Fabrication and luminescent properties of core-shell InGaN/GaN multiple quantum wells on GaN nanopillars	2012-06-25
62	Ultraviolet emission efficiency enhancement of a-plane AlGaN/GaN multiple-quantum-wells with increasing quantum well thickness	2012-06-25
63	A pulsated weak-resonant-cavity laser diode with transient wavelength scanning and tracking for injection-locked RZ transmission	2012-06-18
64	Numerical Study of (0001) Face GaN/InGaN p-i-n Solar Cell With Compositional Grading Configuration	2012-06-15
65	Ultrafast carrier dynamics in Cu(In,Ga)Se-2 thin films probed by femtosecond pump-probe spectroscopy	2012-06-04
66	Lasing action in gallium nitride quasicrystal nanorod arrays	2012-05-21
67	Magnitude-tunable sub-THz shear phonons in a non-polar GaN multiple-quantum-well p-i-n diode	2012-05-14
68	Nano-patterned glass superstrates with different aspect ratios for enhanced light harvesting in a-Si:H thin film solar cells	2012-05-07
69	Improvement of lumen efficiency in white light-emitting diodes with air-gap embedded package	2012-05-01
70	Efficiency and Droop Improvement in InGaN/GaN Light-Emitting Diodes by Selective Carrier Distribution Manipulation	2012-04-01
71	Large Area of Ultraviolet GaN-Based Photonic Quasicrystal Laser	2012-04-01
72	Light Output Enhancement of GaN-Based Light-Emitting Diodes by Optimizing SiO2 Nanorod-Array Depth Patterned Sapphire Substrate	2012-04-01
73	A novel randomly textured phosphor structure for highly efficient white light-emitting diodes	2012-03-16
74	Highly efficient CdS-quantum-dot-sensitized GaAs solar cells	2012-03-12
75	Antireflection and light trapping of subwavelength surface structures formed by colloidal lithography on thin film solar cells	2012-03-01
76	Electrically driven nanopyramid green light emitting diode	2012-02-06
77	High efficiency GaN-based light-emitting diodes with embedded air voids/SiO(2) nanomasks	2012-02-03
78	Investigation of Hot-Carrier Stress Effect on High-Frequency Performance of Laterally Diffused Metal-Oxide-Semiconductor Transistors	2012-02-01
79	Crystal structure characterization, optical and photoluminescent properties of tunable yellow- to orange-emitting Y-2(Ca,Sr)F4S2:Ce3+ phosphors for solid-state lighting	2012-01-01
80	Room temperature lasing with high group index in metal-coated GaN nanoring	2011-12-19
81	Enhanced Output Power of GaN-Based Resonance Cavity Light-Emitting Diodes With Optimized ITO Design	2011-12-15
82	Study of 375 nm ultraviolet InGaN/AlGaN light-emitting diodes with heavily Si-doped GaN transition layer in growth mode, internal quantum efficiency, and device performance	2011-12-15
83	Optical investigation of A-plane ZnO/ZnMgO multiple quantum wells grown by pulsed laser deposition	2011-12-01
84	Characteristics of Current-Injected GaN-Based Vertical-Cavity Surface-Emitting Lasers	2011-11-01
85	Hole transport improvement in InGaN/GaN light-emitting diodes by graded-composition multiple quantum barriers	2011-10-24
86	Large Scale Single-Crystal Cu(In,Ga)Se(2) Nanotip Arrays For High Efficiency Solar Cell	2011-10-01
87	Conversion Efficiency Enhancement of GaN/In(0.11)Ga(0.89)N Solar Cells With Nano Patterned Sapphire and Biomimetic Surface Antireflection Process	2011-09-15
88	Investigation of Emission Polarization and Strain in InGaN-GaN Multiple Quantum Wells on Nanorod Epitaxially Lateral Overgrowth Templates	2011-09-15
89	Lasing at exciton transition in optically pumped gallium nitride nanopillars	2011-09-12
90	Enhanced efficiency for c-Si solar cell with nanopillar array via quantum dots layers	2011-09-12
91	Angle-resolved characteristics of silicon photovoltaics with passivated conical-frustum nanostructures	2011-09-01
92	A Novel Tunable Green- to Yellow-Emitting beta-YFS:Ce(3+) Phosphor for Solid-State Lighting	2011-08-01
93	Efficiency and Droop Improvement in GaN-Based High-Voltage Light-Emitting Diodes	2011-08-01
94	Optical Properties of A-Plane InGaN/GaN Multiple Quantum Wells Grown on Nanorod Lateral Overgrowth Templates	2011-08-01
95	High Q microcavity light emitting diodes with buried AlN current apertures	2011-07-25
96	Inductively coupled plasma grown semiconductor films for low cost solar cells with improved light-soaking stability	2011-07-18
97	Embedded biomimetic nanostructures for enhanced optical absorption in thin-film solar cells	2011-07-04
98	Patterned structure of REMOTE PHOSPHOR for phosphor-converted white LEDs	2011-07-04
99	Highly Efficient and Bright LEDs Overgrown on GaN Nanopillar Substrates	2011-07-01
100	Elucidating the Physical Property of the InGaN Nanorod Light-Emitting Diode: Large Tunneling Effect	2011-07-01
101	Optical and Electrical Properties of GaN-Based Light Emitting Diodes Grown on Micro- and Nano-Scale Patterned Si Substrate	2011-07-01
102	Reduction of Efficiency Droop in InGaN Light-Emitting Diode Grown on Self-Separated Freestanding GaN Substrates	2011-06-15
103	Efficiency Enhancement in Single-Junction InGaP Solar Cells by Using Self-Assembled Nanospheres	2011-06-01
104	Enhanced omnidirectional photon coupling via quasi-periodic patterning of indium-tin-oxide for organic thin-film solar cells	2011-06-01
105	Investigation of efficiency droop for InGaN-based UV light-emitting diodes with InAlGaN barrier	2011-05-23
106	Light Output Enhancement of UV Light-Emitting Diodes With Embedded Distributed Bragg Reflector	2011-05-15
107	Light Output Enhancement of UV Light-Emitting Diodes With Embedded Distributed Bragg Reflector	2011-05-15
108	High Extraction Efficiency of GaN-Based Vertical-Injection Light-Emitting Diodes Using Distinctive Indium-Tin-Oxide Nanorod by Glancing-Angle Deposition	2011-05-01
109	Tunable Light Emission from GaN-Based Photonic Crystal with Ultraviolet AlN/AlGaN Distributed Bragg Reflector	2011-04-01
110	Light Enhancement of Silicon-Nanocrystal-Embedded SiO(x) Film on Silicon-on-Insulator Substrate	2011-04-01
111	Lasing in metal-coated GaN nanostripe at room temperature	2011-03-28
112	Enhanced electron-hole plasma stimulated emission in optically pumped gallium nitride nanopillars	2011-03-21
113	Beyond-Bandwidth Electrical Pulse Modulation of a TO-Can Packaged VCSEL for 10 Gbit/s Injection-Locked NRZ-to-RZ Transmission	2011-03-15
114	Energy transfer from InGaN quantum wells to Au nanoclusters via optical waveguiding	2011-03-14
115	Enhanced Stimulated Emission from Optically Pumped Gallium Nitride Nanopillars	2011-02-01
116	2-Step self-assembly method to fabricate broadband omnidirectional antireflection coating in large scale	2011-02-01
117	Investigation of low-temperature electroluminescence of InGaN/GaN based nanorod light emitting arrays	2011-01-28
118	Enhanced conversion efficiency of a crystalline silicon solar cell with frustum nanorod arrays	2011-01-03
119	Improvement in efficiency droop of GaN-based light-emitting diodes by optimization of active regions	2011-01-01
120	GaN-Based LEDs Grown on HVPE Growth High Crystalline Quality Thick GaN Template	2011-01-01
121	Reduction of Efficiency Droop in Semipolar (1(1)over-bar01) InGaN/GaN Light Emitting Diodes Grown on Patterned Silicon Substrates	2011-01-01
122	In Situ and Self-Restorable Injection-Locking Monitor by Integrated Photodiode for FPLD WDM Transmitter	2011-01-01
123	Hole injection and efficiency droop improvement in InGaN/GaN light-emitting diodes by band-engineered electron blocking layer	2010-12-27
124	Characteristics of efficiency droop in GaN-based light emitting diodes with an insertion layer between the multiple quantum wells and n-GaN layer	2010-12-20
125	Characterizations of low-temperature electroluminescence from ZnO nanowire light-emitting arrays on the p-GaN layer	2010-12-15
126	Light Emission Enhancement of GaN-Based Photonic Crystal With Ultraviolet AlN/AlGaN Distributed Bragg Reflector	2010-11-15
127	Efficiency droop alleviation in InGaN/GaN light-emitting diodes by graded-thickness multiple quantum wells	2010-11-01
128	Investigation of Carrier Transient Response of Nanopatterned n-ZnO/a-Si(i)/p(+)-Si Photodiodes	2010-11-01
129	Long-Cavity Fabry-Perot Laser Amplifier Transmitter With Enhanced Injection-Locking Bandwidth for WDM-PON Application	2010-10-15
130	Structural Effects on Highly Directional Far-Field Emission Patterns of GaN-Based Micro-Cavity Light-Emitting Diodes With Photonic Crystals	2010-10-01
131	Light Extraction Efficiency Enhancement of GaN-Based Light Emitting Diodes on n-GaN Layer Using a SiO(2) Photonic Quasi-Crystal Overgrowth	2010-10-01
132	Optical characteristics of a-plane ZnO/Zn(0.8)Mg(0.2)O multiple quantum wells grown by pulsed laser deposition	2010-10-01
133	Characteristics of emission polarization in a-plane nanorods embedded with InGaN/GaN multiple quantum wells	2010-09-15
134	Continuous wave operation of current injected GaN vertical cavity surface emitting lasers at room temperature	2010-08-16
135	Particular Failure Mechanism of GaN-Based Alternating Current Light-Emitting Diode Induced by GaO(x) Oxidation	2010-08-01
136	Highly-directional emission patterns based on near single guided mode extraction from GaN-based ultrathin microcavity light-emitting diodes with photonic crystals	2010-07-05
137	High extraction efficiency GaN-based light-emitting diodes on embedded SiO(2) nanorod array and nanoscale patterned sapphire substrate	2010-06-28
138	Study of InGaN-GaN Light-Emitting Diodes With Different Last Barrier Thicknesses	2010-06-15
139	Low efficiency droop in blue-green m-plane InGaN/GaN light emitting diodes	2010-06-07
140	Light-Output-Power Enhancement of GaN-Based Light-Emitting Diodes on an n-GaN Layer Using a SiO(2) Photonic Quasi-Crystal Overgrowth	2010-06-01
141	Efficiency Improvement of GaN-Based LEDs With a SiO(2) Nanorod Array and a Patterned Sapphire Substrate	2010-06-01
142	Enhancement of light output power of GaN-based light-emitting diodes using a SiO(2) nano-scale structure on a p-GaN surface	2010-06-01
143	Investigation of light absorption properties and acceptance angles of nanopatterned GZO/a-Si/p(+)-Si photodiodes	2010-05-28
144	InGaN-based light-emitting diodes grown and fabricated on nanopatterned Si substrates	2010-05-17
145	Ultraviolet GaN-based microdisk laser with AlN/AlGaN distributed Bragg reflector	2010-04-12
146	Investigation of wavelength-dependent efficiency droop in InGaN light-emitting diodes	2010-03-01
147	Growth and characterization of a-plane Al(x)Ga(1-x)N alloys by metalorganic chemical vapor deposition	2010-03-01
148	Lasing characteristics at different band edges in GaN photonic crystal surface emitting lasers	2010-02-15
149	Temperature-Dependent Electroluminescence Efficiency in Blue InGaN-GaN Light-Emitting Diodes With Different Well Widths	2010-02-15
150	Polarization Characteristics of Quantum-Dot Vertical-Cavity Surface-Emitting Laser With Light Injection	2010-02-01
151	Efficiency Improvement of Single-Junction In(0.5)Ga(0.5)P Solar Cell with Compositional Grading p-Emitter/Window Capping Configuration	2010-01-01
152	Improvement in Crystalline Quality of InGaN-Based Epilayer on Sapphire via Nanoscaled Epitaxial Lateral Overgrowth	2010-01-01
153	Double Photonic Quasi-Crystal Structure Effect on GaN-Based Vertical-Injection Light-Emitting Diodes	2010-01-01
154	GaN Thickness Effect on Directional Light Enhancement from GaN-Based Film-Transferred Photonic Crystal Light-Emitting Diodes	2010-01-01
155	Divergent Far-Field III-Nitride Ultrathin Film-Transferred Photonic Crystal Light-Emitting Diodes	2010-01-01
156	Self-Assembled Two-Dimensional Surface Structures for Beam Shaping of GaN-Based Vertical-Injection Light-Emitting Diodes	2010-01-01
157	Low Droop Nonpolar GaN/InGaN Light Emitting Diode Grown on m-Plane GaN Substrate	2010-01-01
158	The Lasing Characteristics of GaN-based Two-dimensional Photonic Crystal Surface Emitting Lasers	2010-01-01
159	Output Power Enhancement of Light Emitting Diodes with Defect Passivation layer	2010-01-01
160	High Efficiency InGaP/GaAs Solar Cell with Sub-wavelength Structure on AlInP Window Layer	2010-01-01
161	Observation of Polariton Dispersions for ZnO Microcavities in Strong Couple Regime	2010-01-01
162	Angular-resolved Lasing Characteristics at Different Band Edges in GaN Photonic Crystal Surface Emitting Lasers	2010-01-01
163	Hole shape effect of photonic crystals on the guided resonance modes in GaN-based ultra-thin film-transferred light-emitting diodes	2010-01-01
164	Characterization of a-plane green light-emitting diodes using nanorod lateral overgrowth	2010-01-01
165	Efficiency Enhancement InGaP/GaAs Dual-junction Solar Cell by Broad-band and Omnidirectional Antireflection Nanorod Arrays	2010-01-01
166	Antireflection and Light Trapping of Periodic Subwavelength Surface Structures Formed by Colloidal Monolayer Spheres Lithography on Thin Film Solar Cells	2010-01-01
167	Investigation of Efficiency Droop in Blue InGaN/GaN Light-Emitting Diodes with Different Well Widths	2010-01-01
168	Internal Quantum Efficiency Measurement in InGaN/GaN UV LEDs with Patterned Sapphire Substrate by Photoluminescence and Electroluminescence Method	2010-01-01
169	Observation of Laser Action from Gallium Nitride nanorods under optical pumping	2010-01-01
170	LARGE-SCALE AND ENHANCED EFFICIENCY C-SI SOLAR CELL WITH MOTH-EYE-LIKE BY USING SELF-ASSEMBLED LITHOGRAPHY	2010-01-01
171	ANGLE-RESOLVED REFLECTANCE SPECTROSCOPY OF PASSIVATED TRAPEZOID-CORN NANOSTRUCTURES FOR CRYSTALLINE SILICON PHOTOVOLTAICS	2010-01-01
172	EFFICIENCY ENHANCEMENT InGaP/GaAs DUAL-JUNCTION SOLAR CELL WITH SUB-WAVELENGTH ANTIREFLECTION NANOROD ARRAYS	2010-01-01
173	Defect selective passivation in GaN epitaxial growth and its application to light emitting diodes	2009-11-23
174	Oblique electron-beam evaporation of distinctive indium-tin-oxide nanorods for enhanced light extraction from InGaN/GaN light emitting diodes	2009-11-09
175	Photogeneration of coherent shear phonons in orientated wurtzite semiconductors by piezoelectric coupling	2009-11-01
176	Improved Light Output Power of GaN-Based Light-Emitting Diodes Using Double Photonic Quasi-Crystal Patterns	2009-11-01
177	Nonvolatile memory with switching interfacial polar structures of nano Si-in-mesoporous silica	2009-10-05
178	Enhanced Light Extraction in Wafer-Bonded AlGaInP-Based Light-Emitting Diodes via Micro- and Nanoscale Surface Textured	2009-10-01
179	High-Performance InGaN-Based Green Resonant-Cavity Light-Emitting Diodes for Plastic Optical Fiber Applications	2009-09-15
180	Bilateral Exchange of Soft-Information for Iterative Reliability-Based Decoding with Adaptive Belief Propagation	2009-09-01
181	Investigation of GaN-based light emitting diodes with nano-hole patterned sapphire substrate (NHPSS) by nano-imprint lithography	2009-08-25
182	Characteristics of a-Plane Green Light-Emitting Diode Grown on r-Plane Sapphire	2009-08-15
183	Efficiency improvement of single-junction InGaP solar cells fabricated by a novel micro-hole array surface texture process	2009-08-12
184	Enhanced light output power of GaN-based vertical-injection light-emitting diodes with a 12-fold photonic quasi-crystal by nano-imprint lithography	2009-08-12
185	Freestanding high quality GaN substrate by associated GaN nanorods self-separated hydride vapor-phase epitaxy	2009-08-03
186	High efficiency light emitting diode with anisotropically etched GaN-sapphire interface	2009-07-27
187	Interfacial Polar-Bonding-Induced Multifunctionality of Nano-Silicon in Mesoporous Silica	2009-07-10
188	Effect of Controlled Growth Dynamics on the Microstructure of Nonpolar a-Plane GaN Revealed by X-ray Diffraction	2009-07-01
189	Study of the Excitation Power Dependent Internal Quantum Efficiency in InGaN/GaN LEDs Grown on Patterned Sapphire Substrate	2009-07-01
190	Size-Dependent Strain Relaxation and Optical Characteristics of InGaN/GaN Nanorod LEDs	2009-07-01
191	Far-Field and Near-Field Distribution of GaN-Based Photonic Crystal LEDs With Guided Mode Extraction	2009-07-01
192	Nanorod epitaxial lateral overgrowth of a-plane GaN with low dislocation density	2009-06-22
193	Near-infrared silicon quantum dots metal-oxide-semiconductor field-effect transistor photodetector	2009-06-15
194	Far-field of GaN film-transferred green light-emitting diodes with two-dimensional photonic crystals	2009-05-25
195	Extraction Efficiency Enhancement of GaN-Based Light-Emitting Diodes by Microhole Array and Roughened Surface Oxide	2009-05-01
196	Improving Light Output Power of the GaN-Based Vertical-Injection Light-Emitting Diodes by Mg(+) Implanted Current Blocking Layer	2009-05-01
197	Dynamic Characteristics and Linewidth Enhancement Factor of Quantum-Dot Vertical-Cavity Surface-Emitting Lasers	2009-05-01
198	Development of GaN-Based Vertical-Cavity Surface-Emitting Lasers	2009-05-01
199	Efficiency Enhancement of GaAs Photovoltaics Employing Antireflective Indium Tin Oxide Nanocolumns	2009-04-27
200	High output power density from GaN-based two-dimensional nanorod light-emitting diode arrays	2009-04-06
201	Numerical study of optical properties of InGaN multi-quantum-well laser diodes with polarization-matched AlInGaN barrier layers	2009-04-01
202	Improvement of the Efficiency of InGaN-GaN Quantum-Well Light-Emitting Diodes Grown With a Pulsed-Trimethylindium Flow Process	2009-04-01
203	Directional light extraction enhancement from GaN-based film-transferred photonic crystal light-emitting diodes	2009-03-23
204	Side-mode transmission diagnosis of a multichannel selectable injection-locked Fabry-Perot Laser Diode with anti-reflection coated front facet	2009-03-16
205	Optical properties of a-plane InGaN/GaN multiple quantum wells on r-plane sapphire substrates with different indium compositions	2009-03-15
206	Nitride-Based Thin-Film Light-Emitting Diodes With Photonic Quasi-Crystal Surface	2009-03-01
207	Efficiency Enhancement and Beam Shaping of GaN-InGaN Vertical-Injection Light-Emitting Diodes via High-Aspect-Ratio Nanorod Arrays	2009-01-01
208	Aspect-ratio-dependent ultra-low reflection and luminescence of dry-etched Si nanopillars on Si substrate	2009-01-01
209	Output Power Enhancement of Vertical-Injection Ultraviolet Light-Emitting Diodes by GaN-Free and Surface Roughness Structures	2009-01-01
210	Density-dependent energy relaxation of hot electrons in InN epilayers	2009-01-01
211	Improving Performance of InGaN/GaN Light-Emitting Diodes and GaAs Solar Cells Using Luminescent Gold Nanoclusters	2009-01-01
212	Enhancing the Emission Efficiency of In(0.2)Ga(0.8)N/GaN MQW Blue LED by Using Appropriately Misoriented Sapphire Substrates	2009-01-01
213	Carrier localization degree of In(0.2)Ga(0.8)N/GaN multiple quantum wells grown on vicinal sapphire substrates	2009-01-01
214	Blue GaN-based vertical cavity surface emitting lasers by CW current injection at 77K	2009-01-01
215	Numerical study on optimization of InGaN multi-quantum-well laser diodes with polarization-matched AlInGaN barrier layers	2009-01-01
216	Strong Exciton Polariton Dispersion in Multimode GaN Microcavity	2009-01-01
217	Investigation of Composition-Dependent Optical Phonon Modes in Al(x)Ga(1-x)N Epitaxial Layers Grown on Sapphire Substrates	2009-01-01
218	Novel Indium-Tin-Oxide Nano-Whiskers for Enhanced Transmission of Surface-Textured Silicon Photovoltaic Cells	2009-01-01
219	High Light-Extraction Efficiency GaN-Based Vertical Injection LEDs with Surface Nipple Array	2009-01-01
220	Lasing Characteristics of GaN-based Photonic Crystal Surface-Emitting Lasers	2009-01-01
221	Characteristics of Single-Chip GaN-Based Alternating Current Light-Emitting Diode	2008-12-01
222	Investigation of InGaN/GaN power chip light emitting diodes with TiO(2)/SiO(2) omnidirectional reflector	2008-12-01
223	High-Performance (Al(x)Ga(1-x))(0.5)In(0.5)P-Based Flip-Chip Light-Emitting Diode With a Geometric Sapphire Shaping Structure	2008-11-01
224	Optical study of a-plane InGaN/GaN multiple quantum wells with different well widths grown by metal-organic chemical vapor deposition	2008-11-01
225	High quality ultraviolet AlGaN/GaN multiple quantum wells with atomic layer deposition grown AlGaN barriers	2008-09-29
226	Thermally Evaporated In2O3 Nanoloquats with Tunable Broad-Band Emissions	2008-09-01
227	Numerical Study on Optimization of Active Layer Structures for GaN/AlGaN Multiple-Quantum-Well Laser Diodes	2008-09-01
228	Nanoscale epitaxial lateral overgrowth of GaN-based light-emitting diodes on a SiO(2) nanorod-array patterned sapphire template	2008-08-25
229	Strain relaxation induced microphotoluminescence characteristics of a single InGaN-based nanopillar fabricated by focused ion beam milling	2008-08-25
230	Relative Intensity Noise Characteristics of Long-Wavelength Quantum Dot Vertical-Cavity Surface-Emitting Lasers	2008-08-01
231	Investigation of GaN-based vertical-injection light-emitting diodes with GaN nano-cone structure by ICP etching	2008-07-25
232	Fabrication and Characterization of Temperature Insensitive 660-nm Resonant-Cavity LEDs	2008-07-01
233	Polarized light emission from photonic crystal light-emitting diodes	2008-06-16
234	Broadband and omnidirectional antireflection employing disordered GaN nanopillars	2008-06-09
235	Anisotropy of light extraction from GaN two-dimensional photonic crystals	2008-05-12
236	Enhanced light output from a nitride-based power chip of green light-emitting diodes with nano-rough surface using nanoimprint lithography	2008-05-07
237	Characteristics of InGaAs submonolayer quantum-dot and InAs quantum-dot photonic-crystal vertical-cavity surface-emitting lasers	2008-05-01
238	Enhanced light extraction of InGaN-based green LEDs by nano-imprinted 2D photonic crystal pattern	2008-05-01
239	Nano-processing techniques applied in GaN-Based light-emitting devices with self-assembly Ni nano-masks	2008-05-01
240	Study of GaN-based light-emitting diodes grown on chemical wet-etching-patterned sapphire substrate with V-shaped pits roughening surfaces	2008-05-01
241	Further enhancement of nitride-based near-ultraviolet vertical-injection light-emitting diodes by adopting a roughened mesh-surface	2008-05-01
242	Enhanced vertical extraction efficiency from a thin-film InGaN-GaN light-emitting diode using a 2-D photonic crystal and an omnidirectional reflector	2008-05-01
243	Ultrafast carrier dynamics of InGaAsN and InGaAs single quantum wells	2008-04-21
244	40 GHz Phase Shifter based on Semiconductor Laser	2008-04-10
245	CW lasing of current injection blue GaN-based vertical cavity surface emitting laser	2008-04-07
246	Improvement of light output in GaN-based power chip light-emitting diodes with a nano-rough surface by nanoimprint lithography	2008-04-01
247	Small GaN-based light-emitting diodes with a single electrode pad fabricated on a sapphire substrate	2008-04-01
248	Phase transformation and optical characteristics of porous germanium thin film	2008-03-31
249	Chirp and error rate analyses of an optical-injection gain-switching VCSEL based all-optical NRZ-to-PRZ converter	2008-03-31
250	Enhancing the light extraction of (AlxGa1-x)(0.5)In0.5P-based light-emitting diode fabricated via geometric sapphire shaping	2008-03-01
251	High-brightness InGaN-GaN flip-chip light-emitting diodes with triple-light scatteriny layers	2008-03-01
252	Characteristics of multileaf holey light-emitting diodes for fiber-optic communications	2008-02-01
253	High brightness GaN-based flip-chip light-emitting diodes by adopting geometric sapphire shaping structure	2008-02-01
254	Optically modulated internal strain in InGaN quantum dots grown on SiNx nano masks	2008-01-21
255	GaN-based two-dimensional surface-emitting photonic crystal lasers with AlN/GaN distributed Bragg reflector	2008-01-07
256	Characteristics of single-mode InGaAs sub-monolayer quantum-dot photonic-crystal VCSELs emitting in the 990 nm range	2008-01-01
257	Photonic-crystal light-emitting diodes on p-type GaAs substrates for optical communications	2008-01-01
258	Single-mode 780 nm vertical-cavity surface-emitting lasers with multi-leaf holey structure	2008-01-01
259	Effects of built-in polarization and carrier overflow on InGaN quantum-well lasers with electronic blocking layers	2008-01-01
260	One-shot exposure for patterning two-dimensional photonic crystals to enhance light extraction of InGaN-based green LEDs	2008-01-01
261	Luminance enhancement of flip-chip light-emitting diodes by geometric sapphire shaping structure	2008-01-01
262	Wet mesa etching process in InGaN-based light emitting diodes	2008-01-01
263	Enhancement of light output intensity by integrating ZnO nanorod arrays on GaN-based LLO vertical LEDs	2008-01-01
264	Abnormal PL spectrum in InGaN MQW surface emitting cavity - art. no. 69080L	2008-01-01
265	AlGaN/GaN multiple quantum wells grown by atomic layer deposition - art. no. 68941V	2008-01-01
266	Improvement of GaN-based LED with SiO2 photonic crystal on an ITO film by holographic lithography	2008-01-01
267	Broad Angular and Spectral Anti-Reflection Employing GaN Nano-Pillar Structures	2008-01-01
268	Optical studies of InN epilayers on Si substrates with different buffer layers	2007-12-01
269	Fabrication of InGaN/GaN nanorod light-emitting diodes with self-assembled Ni metal islands	2007-11-07
270	Characteristics of broad-area InGaAs submonolayer quantum-dot vertical-cavity surface-emitting lasers	2007-10-01
271	GaN-based high-Q vertical-cavity light-emitting diodes	2007-10-01
272	Anisotropy of light extraction from two-dimensional photonic crystal light-emitting diodes	2007-09-17
273	High-power single-mode submonolayer quantum-dot photonic crystal vertical-cavity surface-emitting lasers	2007-09-01
274	Optical properties of In0.3Ga0.7N/GaN green emission nanorods fabricated by plasma etching	2007-08-22
275	Lasing characteristics of a GaN photonic crystal nanocavity light source	2007-07-23
276	Dislocation reduction in GaN grown on stripe patterned r-plane sapphire substrates	2007-07-09
277	Improvement of efficiency and ESD characteristics of ultraviolet light-emitting diodes by inserting AlGaN and SiN buffer layers	2007-07-01
278	Fabrication and characteristics of thin-film InGaN-GaN light-emitting diodes with TiO2/SiO2 omnidirectional reflectors	2007-07-01
279	Enhancement of flip-chip light-emitting diodes with omni-directional reflector and textured micropillar arrays	2007-07-01
280	Fabrication of microcavity light-emitting diodes using highly reflective AlN-GaN and Ta2O5-SiO2 distributed Bragg mirrors	2007-07-01
281	Reliable architecture for high-capacity fiber-radio systems	2007-07-01
282	Highly strained InGaAs/GaAs quantum well vertical-cavity surface-emitting lasers	2007-06-01
283	High brightness GaN-based light-emitting diodes	2007-06-01
284	Beam profile characteristics of InGaAs sub-monolayer quantum-dot photonic-crystal VCSELs	2007-06-01
285	Characteristics of P-substrate small-aperture holey light-emitting diodes for fiber-optic applications	2007-05-01
286	Light-output enhancement of nano-roughened GaN laser lift-off light-emitting diodes formed by ICP dry etching	2007-05-01
287	Optical characteristics of a-plane InGaN/GaN multiple quantum wells with different well widths	2007-04-30
288	Low refractive index Si nanopillars on Si substrate	2007-04-30
289	Dichromatic InGaN-based white light emitting diodes by using laser lift-off and wafer-bonding schemes	2007-04-16
290	Optical properties of InGaN quantum dots grown by SiN(x) nanomasks	2007-04-15
291	Anomalous microphotoluminescence of high-aspect-ratio Si nanopillars formatted by dry-etching Si substrate with self-aggregated Ni nanodot mask	2007-04-02
292	Characteristics of cross-shaped polarization-switching vertical-cavity surface-emitting lasers for dual-channel communications	2007-04-01
293	Nano-roughening n-side surface of AlGaInP-based LEDs for increasing extraction efficiency	2007-03-25
294	Study on optimal growth conditions of a-plane GaN grown on r-plane sapphire by metal-organic chemical vapor deposition	2007-03-15
295	High-performance GaN-based vertical-injection light-emitting diodes with TiO2-SiO2 omnidirectional reflector and n-GaN roughness	2007-03-01
296	Enhanced photoresponse of a metal-oxide-semiconductor photodetector with silicon nanocrystals embedded in the oxide layer	2007-01-29
297	Investigation of InGaN/GaN light emitting diodes with nano-roughened surface by excimer laser etching method	2007-01-25
298	Effect of growth conditions on the Al composition and quality of AlGaN film	2007-01-15
299	Recent progress on GaN-based vertical cavity surface emitting lasers - art. no. 67660G	2007-01-01
300	Observations on surface morphologies and dislocations of a-plane GaN grown by metal organic chemical vapor deposition	2007-01-01
301	Reflectance study of nano-scaled textured surfaces	2007-01-01
302	InGaN/GaN nanostripe grown on pattern sapphire by metal organic chemical vapor deposition	2007-01-01
303	Enhancement of InGaN/GaN flip-chip ITO LEDs with incline sidewalls coated with TiO2/SiO2 omnidirectional reflector	2007-01-01
304	Efficiency enhancement of GaN-based power-chip LEDs with sidewall roughness by natural lithography	2007-01-01
305	Fabrication and characterization of InGaN-based green resonant-cavity LEDs using hydrogen ion-implantation techniques	2007-01-01
306	Tunable slow light device using quantum dot semiconductor laser	2006-12-25
307	Trenched epitaxial lateral overgrowth of fast coalesced a-plane GaN with low dislocation density	2006-12-18
308	Effect of oxygen on characteristics of nickel oxide/indium tin oxide heterojunction diodes	2006-12-15
309	Characteristics of single-mode InGaAs submonolayer quantum-dot photonic-crystal vertical-cavity surface-emitting lasers	2006-12-01
310	Light extraction enhancement of InGaN-based green LEDs with a composite omnidirectional reflector	2006-12-01
311	High light-extraction GaN-based vertical LEDs with double diffuse surfaces	2006-11-01
312	Phosphor-free GaN-based transverse junction light emitting diodes for the generation of white light	2006-11-01
313	Improvement of InGaN/GaN light emitting diode performance with a nano-roughened p-GaN surface by excimer laser-irradiation	2006-10-10
314	The carrier blocking effect on 850 nm InAlGaAs/AlGaAs vertical-cavity surface-emitting lasers	2006-10-01
315	ZnO nanopowders fabricated by dc thermal plasma synthesis	2006-09-25
316	Emission characteristics of optically pumped GaN-based vertical-cavity surface-emitting lasers	2006-09-18
317	High-power single-mode vertical-cavity surface-emitting lasers with multi-leaf holey structure	2006-09-01
318	Enhancement of InGaN-GaN indium-tin-oxide flip-chip light-emitting diodes with TiO2-SiO2 multilayer stack omnidirectional reflector	2006-09-01
319	Tunable optical group delay in quantum dot vertical-cavity surface-emitting laser at 10 GHz	2006-08-31
320	Rapid self-assembly of Ni nanodots on Si substrate covered by a less-adhesive and heat-accumulated SiO2 layers	2006-08-14
321	Single-mode InGaAs submonolayer quantum dot photonic crystal VCSELs	2006-08-01
322	Fabrication and photoluminescence of InGaN-based nanorods fabricated by plasma etching with nanoscale nickel metal islands	2006-07-01
323	Design and fabrication of temperature-insensitive InGaP-InGaAlP resonant-cavity light-emitting diodes	2006-07-01
324	Nitride-based LEDs with nano-scale textured sidewalls using natural lithography	2006-06-28
325	Optically heterodyne diagnosis of a high-saturation-power undoped InP sandwiched InGaAs p-i-n photodiode grown on GaAs	2006-06-12
326	Aluminum incorporation into AlGaN grown by low-pressure metal organic vapor phase epitaxy	2006-05-15
327	Temperature-dependent optical properties of In0.34Ga0.66As1-xNx/GaAs single quantum well with high nitrogen content for 1.55 mu m application grown by molecular beam epitaxy	2006-05-15
328	Whispering gallery mode of modified octagonal quasiperiodic photonic crystal single-defect microcavity and its side-mode reduction	2006-05-15
329	A novel method to improve VCSELs oxide-confined aperture uniformity using selective As+-implanted underlying layer	2006-05-10
330	Catalyst-free GaN nanorods grown by metalorganic molecular beam epitaxy	2006-05-01
331	OCDMA light source using directly modulated Fabry-Perot laser diode in an external injection scheme	2006-05-01
332	Enhancing the output power of GaN-based LEDs grown on wet-etched patterned sapphire substrates	2006-05-01
333	Experimental and theoretical analysis on ultraviolet 370 nm AlGaInN light-emitting diodes	2006-05-01
334	Dynamic characteristics of long-wavelength quantum dot vertical-cavity surface-emitting lasers with light injection	2006-04-03
335	Room-temperature operation of optically pumped blue-violet GaN-based vertical-cavity surface-emitting lasers fabricated by laser lift-off	2006-04-01
336	InGaN self-assembled quantum dots grown by metal-organic chemical vapour deposition with growth interruption	2006-03-28
337	Enhanced light output in InGaN-based light-emitting diodes with onmidirectional one-dimensional photonic crystals	2006-03-01
338	GaN-based LEDs with Al-deposited V-shaped sapphire facet mirror	2006-03-01
339	Single-mode monolithic quantum-dot VCSEL in 1.3 mu m with sidemode suppression ratio over 30 dB	2006-03-01
340	The lasing characteristics of GaN-based vertical-cavity surface-emitting laser with AlN-GaN and Ta2O5-SiO2 distributed Bragg reflectors	2006-03-01
341	Crack-free GaN/AlN distributed Bragg reflectors incorporated with GaN/AlN superlattices grown by metalorganic chemical vapor deposition	2006-02-06
342	AlGaInP light-emitting diodes with stripe patterned omni-directional reflector	2006-02-01
343	High brightness AlGaInP-based light emitting diodes by adopting the stripe-patterned omni-directional reflector	2006-02-01
344	Photoluminescence of plasma enhanced chemical vapor deposition amorphous silicon oxide with silicon nanocrystals grown at different fluence ratios and substrate temperatures	2006-02-01
345	Effect of annealing on low-threshold-current large-wavelength InGaAs quantum well vertical-cavity laser	2006-02-01
346	Theoretical and experimental analysis on InAlGaAs/AlGaAs active region of 850-nm vertical-cavity surface-emitting lasers	2006-01-01
347	1.3-mu m InAs-InGaAs quantum-dot vertical-cavity surface-emitting laser with fully doped DBRs grown by MBE	2006-01-01
348	Fabrication and characterization of GaN-based LEDs grown on chemical wet-etched patterned sapphire substrates	2006-01-01
349	Growth of highly strained RnGaAs quantum wells by metalorganic chemical vapor deposition with application to vertical-cavity surface-emitting laser	2006-01-01
350	Improvement in light-output efficiency of AlGaInP LEDs fabricated on stripe patterned epitaxy	2005-12-01
351	Effects of different n-electrode patterns on optical characteristics of large-area p-side-down InGaN light-emitting diodes fabricated by laser lift-off	2005-11-01
352	Increasing the extraction efficiency of AlGaInP LEDs via n-side surface roughening	2005-11-01
353	1.3 mu m quantum dot vertical-cavity surface-emitting laser with external light injection	2005-10-27
354	Low-threshold-current-density, long-wavelength, highly strained InGaAs laser grown by metalorganic chemical vapor deposition	2005-10-01
355	Fabrication and characterization of In(0.25)Ga(0.75)N/GaN multiple quantum wells embedded in nanorods	2005-10-01
356	Singlemode InAs quantum dot photonic crystal VCSELs	2005-09-29
357	Improvement in light-output efficiency of near-ultraviolet InGaN-GaN LEDs fabricated on stripe patterned sapphire substrates	2005-09-25
358	Enhanced light output of an InGaN/GaN light emitting diode with a nano-roughened p-GaN surface	2005-09-01
359	Fabrication and performance of blue GaN-based vertical-cavity surface emitting laser employing AlN/GaN and Ta2O5/SiO2 distributed Bragg reflector	2005-08-22
360	Improved photoluminescence of 1.26 mu m InGaAs/GaAs quantum wells assisted by Sb surfactant and indium-graded intermediate layers	2005-08-08
361	Temperature-dependent photoluminescence of highly strained InGaAsN/GaAs quantum wells (lambda=1.28-1.45 mu m) with GaAsP strain-compensated layers	2005-08-01
362	Ultralow leakage In0.53Ga0.47As p-i-n photodetector grown on linearly graded metamorphic InxGa1-xP buffered GaAs substrate	2005-06-01
363	Enhancement in light output of InGaN-based microhole array light-emitting diodes	2005-06-01
364	High speed (> 13 GHz) modulation of 850 nm vertical cavity surface emitting lasers (VCSELs) with tapered oxide confined layer	2005-06-01
365	Improving high-temperature performance in continuous-wave mode InGaAsN/GaAsN ridge waveguide lasers	2005-06-01
366	Improvement of InGaN-GaN light-emitting diode performance with a nano-roughened p-GaN surface	2005-05-01
367	Fabrication of large-area GaN-based light-emitting diodes on Cu substrate	2005-04-01
368	10 Gbps InGaAs : Sb-G-aAs-GaAsP quantum well vertical cavity surface emitting lasers with 1.27 mu m emission wavelengths	2005-04-01
369	Fabrication and micro-photoluminescence investigation of Mg-doped gallium nitride nanorods	2005-04-01
370	Characterization of InGaN/GaN multiple quantum well nanorods fabricated by plasma etching with self-assembled nickel metal nanomasks	2005-04-01
371	Photoluminescence from In0.3Ga0.7N/GaN multiple-quantum-well nanorods	2005-04-01
372	Singlemode (SMSR > 40 dB) proton-implanted photonic crystal vertical-cavity surface-emitting lasers	2005-03-17
373	High-speed modulation of InGaAs : Sb-GaAs-GaAsP quantum-well vertical-cavity surface-emitting lasers with 1.27-mu m emission wavelength	2005-03-01
374	Emission of bright blue light from mesoporous silica with dense Si (Ge) nanocrystals	2005-01-01
375	High temperature stability 850-nm In0.15Al0.08Ga0.77As/Al0.3Ga0.7As vertical-cavity surface-emitting laser with single Al0.75Ga0.25As current blocking layer	2005-01-01
376	Light-output enhancement in a nitride-based light-emitting diode with 22 degrees undercut sidewalls	2005-01-01
377	Single-mode 1.27-mu m InGaAs : Sb-GaAs-GaAsP quantum well vertical cavity surface emitting lasers	2005-01-01
378	Spectrally resolved spontaneous emission patterns of oxide-confined vertical-cavity surface-emitting lasers	2004-12-01
379	Fabrication and characteristics of high-speed oxide-confined VCSELs using InGaAsP-InGaP strain-compensated MQWs	2004-12-01
380	Improvement of kink characteristics performance of GaAsVCSEL with a indium-tin-oxide top transparent overcoating	2004-11-15
381	Simulation of 1300-nm In(0.4)Ga(0.6)As(0.986)N(0.014)/GaAs(1-x)N(x) quantum-well lasers with various GaAs(1-x)N(x) strain compensated barriers	2004-11-01
382	Fabrication of GaN-based nanorod light emitting diodes using self-assemble nickel nano-mask and inductively coupled plasma reactive ion etching	2004-10-25
383	Investigation of GaN LED with Be-implanted Mg-doped GaN layer	2004-10-15
384	Pumping intensity dependent surface charge accumulation and redshifted microphotoluminescence of silicon-implanted quartz	2004-08-09
385	10 Gb/s single-mode vertical-cavity surface-emitting laser with large aperture and oxygen implantation	2004-08-01
386	High-speed (> 10 Gbps) 850 nm oxide-confined vertical cavity surface emitting lasers (VCSELs) with a planar process and reduced parasitic capacitance	2004-07-01
387	As+-implanted AlGaAs oxide-confined VCSEL with enhanced oxidation rate and high performance uniformity	2004-06-01
388	Study of GaN light-emitting diodes fabricated by laser lift-off technique	2004-04-15
389	Effect of rapid thermal annealing on beryllium implanted p-type GaN	2004-03-25
390	Study of dry etching for GaN and InGaN-based laser structure using inductively coupled plasma reactive ion etching	2004-03-25
391	High speed performance of 850 nm silicon-implanted AlGaAs/GaAs vertical cavity emitting lasers	2004-03-01
392	Comparisons of InP/InGaAlAs and InAlAs/InGaAlAs distributed Bragg reflectors grown by metalorganic chemical vapor deposition	2004-02-25
393	MOCVD growth of AlN/GaN DBR structures under various ambient conditions	2004-02-15
394	High-speed characteristics of large-area single-transverse-mode vertical-cavity surface-emitting lasers	2003-10-16
395	Performance of 850 nm AlGaAs/GaAs implanted VCSELs utilizing silicon implantation induced disordering	2003-10-01
396	High-speed modulation of 850 nm InGaAsP/InGaP strain-compensated VCSELs	2003-07-10
397	MULTIPLE-INPUTS SYSTOLIC PRIORITY QUEUE FOR FAST SEQUENTIAL-DECODING OF CONVOLUTIONAL-CODES	1995-10-01
398	A conceptual framework of bank credit granting system-computer applications in Taiwan	1995-01-01
399	SEQUENTIAL-DECODING OF CONVOLUTIONAL-CODES BY A COMPRESSED MULTIPLE QUEUE ALGORITHM	1994-08-01

Books

序號 No.	標題 Title	著作日期 Date
1	國立交通大學光電工程學系郭浩中教師升等送審著作論文集	2007

Others

序號 No.	標題 Title	著作日期 Date
1	Highly Efficient Multiple-Layer CdS Quantum Dot Sensitized III-V Solar Cells	2014-02-01
2	Solid-State Lighting with High Brightness, High Efficiency, and Low Cost	2014-01-01
3	Reduction of Efficiency Droop in Semipolar (1(1)over-bar01) InGaN/GaN Light Emitting Diodes Grown on Patterned Silicon Substrates (vol 4, 012105, 2011)	2011-03-01
4	Introduction to the Issue on Solid-State Lighting	2009-07-01
5	High output power density from GaN-based two-dimensional nanorod light-emitting diode arrays (vol 94, 141111, 2009)	2009-05-25
6	Enhancement of flip-chip light-emitting diodes with omni-directional reflector and textured micropillar arrays (vol 19, pg 18, 2007)	2007-09-01

Patents

序號 No.	標題 Title	著作日期 Date
1	具有空氣介質層之半導體光電元件及空氣介質層之製作方法	2014-11-11
2	奈米級側向成長磊晶之薄膜發光二極體及其製作方法	2014-11-01
3	半導體發光元件	2014-08-11
4	具有漸變含量之電洞穿隧層之發光元件	2014-07-11
5	白光發光二極體封裝結構的製造方法	2014-05-16
6	具有粗螢光粉結構之發光二極體	2014-03-16
7	發光二極體的封裝結構及其封裝方法	2014-02-16
8	能帶邊緣型光子晶體雷射二極體	2013-12-11
9	具有奈米條狀結構之發光元件及其製造方法	2013-11-11
10	具有漸變含量之電洞穿隧層之發光元件	2013-09-16
11	一種具有週期性形狀結構透明導電極之太陽能電池裝置	2013-09-11
12	空気媒質層を有する半導体光学装置の製造方法及び空気媒質層の形成方法（Ａｓｅｍｉｃｏｎｄｕｃｔｏｒｏｐｔｉｃａｌｄｅｖｉｃｅｈａｖｉｎｇａｉｒｍｅｄｉａｌａｙｅｒａｎｄｔｈｅｍｅｔｈｏｄｆｏｒｆｏｒｍｉｎｇｔｈｅａｉｒｍｅｄｉａｌａｙｅｒ）	2013-06-20
13	具有空氣介質層之半導體光電元件及空氣介質層之製作方法	2013-06-16
14	奈米級側向成長磊晶之薄膜發光二極體及其製作方法	2012-11-01
15	柱状ナノ構造体（ナノロッド）を利用し発光ダイオード（ＬＥＤ）の発光効率を引き上げる方法	2012-09-14
16	利用斜向沈積形成之奈米結構薄膜及其方法	2012-09-11
17	半導體發光元件	2012-09-01
18	半导体发光元件及其制作方法	2012-08-29
19	一種具有週期性形狀結構透明導電極之太陽能電池裝置	2012-04-01
20	半導體發光元件及其製作方法	2011-11-21
21	一種利用奈米柱狀結構提升發光二極體光輸出效率之方法	2011-04-11
22	能帶邊緣型光子晶體雷射二極體	2011-03-01
23	SURFACE-EMITTING LASER DEVICE	2011-02-24
24	NANOSTRUCTURED THIN-FILM FORMED BY UTILIZING OBLIQUE-ANGLE DEPOSITION AND METHOD OF THE SAME	2010-10-14
25	Nanostructured thin-film formed by utilizing oblique-angle deposition and method of the same	2010-02-18
26	利用斜向沈積形成之奈米結構薄膜及其方法	2010-02-16
27	具備透明電極及無裂縫氮化鋁／氮化鎵系列反射鏡之可電激發面射型雷射及其製作方法	2009-07-01
28	半导体发光元件及其制作方法	2009-02-18
29	半導體發光元件及其製作方法	2009-02-01
30	LIGHT-EMITTING DEVICE AND METHOD FOR MAKING THE SAME	2009-01-22
31	具有奈米條狀結構之發光元件及其製造方法	2009-01-16
32	柱状ナノ構造体（ナノロッド）を利用し発光ダイオード（ＬＥＤ）の発光効率を引き上げる方法	2008-12-18
33	一種利用奈米柱狀結構提升發光二極體光輸出效率之方法	2008-12-16
34	Method for promoting light emission efficiency of LED using nanorods structure	2008-12-11
35	III族氮化物系布拉格反射鏡之製造方法及布拉格反射鏡	2008-08-11
36	Ⅲ族氮化物系反射鏡之製法	2007-06-16
37	Process of producing group III nitride based reflectors	2007-06-07

Plan

序號 No.	標題 Title	著作日期 Date
1	高效率(大於200lm/W)發光二極體關鍵材料與零組件之開發( I )	2014
2	新穎高效率混合型之奈米粒子光電元件-總計畫暨子計畫一：新穎高效率混合型之奈米粒子光電元件	2014
3	高效率(大於200 lm/W)發光二極體光源模組開發	2013
4	新穎高效率混合型之奈米粒子光電元件-總計畫暨子計畫一：新穎高效率混合型之奈米粒子光電元件	2013
5	具晶圓級封裝技術之高內部量子效率與低效率下降率之氮化鎵發光二極體開發計畫( II )	2012
6	半極性與非極性氮化鎵之寬能隙材料及光電元件研究-子計畫一：半極性與非極性氮化鎵半導體材料元件磊晶成長	2012
7	半極性與非極性氮化鎵之寬能隙材料及光電元件研究-總計畫：半極性與非極性氮化鎵之寬能隙材料及光電元件研究	2012
8	V和W 頻段無線與超寬頻訊號光纖通訊之關鍵元件及技術之研究-子計畫五：以氮化鎵材料及元件應用於次兆赫與兆赫微波光纖通訊	2011
9	半極性與非極性氮化鎵之寬能隙材料及光電元件研究-子計畫一：半極性與非極性氮化鎵半導體材料元件磊晶成長	2011
10	具晶圓級封裝技術之高內部量子效率與低效率下降率之氮化鎵發光二極體開發計畫( I )	2011
11	半極性與非極性氮化鎵之寬能隙材料及光電元件研究-總計畫：半極性與非極性氮化鎵之寬能隙材料及光電元件研究	2011
12	半極性與非極性氮化鎵之寬能隙材料及光電元件研究---總計畫	2010
13	V和W 頻段無線與超寬頻訊號光纖通訊之關鍵元件及技術之研究---子計畫五：以氮化鎵材料及元件應用於次兆赫與兆赫微波光纖通訊	2010
14	赴歐洲考察光電科技發展參訪計畫	2010
15	半極性與非極性氮化鎵之寬能隙材料及光電元件研究---子計畫一：半極性與非極性氮化鎵半導體材料元件磊晶成長	2010
16	具晶圓級封裝技術之高內部量子效率與低效率下降率之氮化鎵發光二極體開發計畫	2009
17	未來光通訊系統所需之新穎光電元件與技術之研究---子計畫三：新穎式高速量子點面射型雷射於量子光通訊系統之製程及研究	2009
18	V和W 頻段無線與超寬頻訊號光纖通訊之關鍵元件及技術之研究---子計畫五：以氮化鎵材料及元件應用於次兆赫與兆赫微波光纖通訊	2009
19	未來光通訊系統所需之新穎光電元件與技術之研究---子計畫三：新穎式高速量子點面射型雷射於量子光通訊系統之製程及研究	2008
20	以注入鎖定波長光子晶體量子點面射型雷射二極體為基礎之分波多工被動光纖網路系統	2008
21	以注入鎖定波長光子晶體量子點面射型雷射二極體為基礎之分波多工被動光纖網路系統	2007
22	未來光通訊系統所需之新穎光電元件與技術之研究---子計畫三：新穎式高速量子點面射型雷射於量子光通訊系統之製程及研究	2007
23	新穎光信號處理元件與模組在光通信中之應用---子計畫四：高速長波長(1.3,1.55μm)VCSELs在都會DWDM之研究與實現(III)	2006
24	高效率低成本III-V族半導體太陽能電池關鍵技術開發計畫	2006
25	以注入鎖定波長光子晶體量子點面射型雷射二極體為基礎之分波多工被動光纖網路系統	2006
26	新穎光信號處理元件與模組在光通信中之應用---子計畫四：高速長波長(1.3,1.55.mu.m)VCSELs在都會DWDM之研究與實現(II)	2005
27	新穎光信號處理元件與模組在光通信中之應用---子計畫四:高速長波長(1.3,1.55.mu.m)VCSELs在都會DWDM之研究與實現(I)	2004
28	III-Nitride量子點及奈米結構成長及光學特性之研究	2003

Proceedings Paper

序號 No.	標題 Title	著作日期 Date
1	Enhancement of angular CCT by hybrid phosphor structure in White Light-emitting Diodes	2013-01-01
2	Simulation of Grading Double Hetero-junction non-polar InGaN Solar cell	2013-01-01
3	Enhance current density and light trapping effect in a-Si thin film solar cells by flexible textured PDMS film	2013-01-01
4	Fano resonances GaN-based high contrast grating surface-emitting lasers	2013-01-01
5	Improve GaAs Solar Cells Efficiency by Using High-transmittance Textured PDMS Film	2013-01-01
6	Efficiency enhancement of InGaN/GaN multiple quantum well solar cells using CdS quantum dots and distributed Bragg reflectors	2013-01-01
7	High-quality Quantum-Dot-Based Full-Color Display Technology by Pulsed Spray Method	2013-01-01
8	Photoluminescent Study of High Indium Content Nanopyramid Light Emitting Diodes	2013-01-01
9	The effect of pulsewidth on preparing CuIn1-xGaxSe2 thin film via pulse laser deposition	2013-01-01
10	Numerical Study of In0.15Ga0.85N/GaN MQW Solar Cells with varying well band structure	2013-01-01
11	Embedded InN Dot-Like Structure within InGaN Layers Using Gradient-Indium Content in Nitride-Based Solar Cell	2013-01-01
12	Spectrally Dependent Performance of Hybrid Colloidal Quantum Dots GaAs Solar Cells	2013-01-01
13	A Wearable Bio-potential Monitor System with Capacitive Coupling Electrode	2013-01-01
14	Electrically driven nanoarrow array green LED	2012-01-01
15	Low efficiency droop of InGaN/GaN blue LEDs with super-lattice active structure	2012-01-01
16	Recent advances on CW current injection blue VCSELs	2012-01-01
17	Lasing action in gallium nitride photonic quasicrystal nanorod arrays	2012-01-01
18	Reduction of efficiency droop in InGaN-Based UV Light-Emitting Diodes with InAlGaN Barrier	2012-01-01
19	Investigation of emission polarization and strain in InGaN/GaN multiple quantum wells on nanorod epitaxially lateral overgrowth templates	2012-01-01
20	Self-Pulsation in Two-Section Laser with an air gap	2012-01-01
21	Improved efficiency for nanopillar array of c-Si photovoltaic by down-conversion and anti-reflection of quantum dots	2012-01-01
22	Characterization of large area Cu(In,Ga)Se-2 nanotip arrays via photoluminescence	2012-01-01
23	A HIGHLY EFFICIENT HYBRID CDS-GAAS SOLAR CELL	2012-01-01
24	MOCVD growth of GaN nanopyramid and nanopillar LED with emission in green to orange color	2012-01-01
25	Improvement of Angular-dependent CCT Uniformity by ZrO2 Nano-particles in Remote Phosphor White LEDs	2012-01-01
26	A Full-Color, White Light Emission of Quantum-Dot-Based Display Technology Using Pulsed Spray Method with Distributed Bragg Reflector	2012-01-01
27	Ultrafast Pump-probe Spectroscopy of Carrier Relaxation Dynamics in Cu(In,Ga)Se-2 Thin Films	2012-01-01
28	Characteristics of an Electrically Pumped GaN-based Microcavity Light Emitter with an AlN Current Blocking Layer	2012-01-01
29	Design of Highly Absorption Structure by Flatted ITO Patterned Substrate for Thin Film a-Si Solar Cells	2012-01-01
30	Tunable Microwave Generation by Photonic Integrated Distributed Feedback Lasers	2012-01-01
31	Highly Efficient GaAs Solar Cells with Dual Layer of Quantum Dots And A Flexible PDMS Film	2012-01-01
32	Efficiency and droop improvement in InGaN/GaN light-emitting diodes by selectively carrier-distribution manipulation	2012-01-01
33	Simulation of Grading Double Hetero-junction non-polar InGaN Solar cell	2012-01-01
34	High Performance of Double-layer Quantum Dots with PDMS Film for Novel GaAs Solar Cells	2012-01-01
35	High Uniformity of Remote Phosphor Structure by ZrO2 Nano-particles for White LEDs	2012-01-01
36	"S-shaped" Photoluminescence Emission Shift in Cu(In,Ga)Se-2 Thin Films	2012-01-01
37	Improvement in efficiency droop of GaN-based light-emitting diodes by optimization of active regions	2012-01-01
38	Highly efficient CdS-quantum-dot-sensitized InGaN multiple quantum well solar cells	2012-01-01
39	Efficiency Enhancement InGaP/GaAs Dual-Junction Solar Cell with Subwavelength Antireflection Nanorod Arrays	2011-12-01
40	Optical properties of (1 (1)over-bar 0 1) semi-polar InGaN/GaN multiple quantum wells grown on patterned silicon substrates	2011-03-01
41	Material characteristics of InGaN based light emitting diodes grown on porous Si substrates	2011-01-15
42	Study of the internal quantum efficiency of InGaN/GaN UV LEDs on patterned sapphire substrate using the electroluminescence method	2011-01-15
43	Efficiency droop improvement in GaN-based light-emitting diodes by graded-composition electron blocking layer	2011-01-01
44	Fabrication and lasing characteristics of GaN nanopillars	2011-01-01
45	Growth of semi-polar GaN-based light-emitting diodes grown on an patterned Si substrate	2011-01-01
46	Stable and near-omni-directional high-efficiency amorphous Si photovoltaic devices	2011-01-01
47	Abnormal polarization switching phenomenon in a-plane Al(x)Ga(1-x)N	2011-01-01
48	Characteristics of GaN-based Vertical Cavity Surface Emitting Lasers with Hybrid Mirrors	2011-01-01
49	Efficiency Droop Reduction in InGaN/GaN Light-emitting Diodes by Graded-thickness Multiple Quantum Wells	2011-01-01
50	Highly Efficient InGaN-Based Light Emitting Devices grown on Nanoscale Patterned Substrates by MOCVD	2011-01-01
51	InGaAs submonolayer quantum-dot photonic-crystal LEDs for fiber-optic communications	2010-05-01
52	Influence of LT-GaN nucleation layer on the structural and optical properties of MOVPE-grown a-plane GaN	2010-04-01
53	Crystal quality improvement of a-plane GaN using epitaxial lateral overgrowth on nanorods	2010-04-01
54	Strain-reduced GaN thick-film grown by hydride vapor phase epitaxy utilizing dot air-bridged structure	2009-05-01
55	HRTEM investigation of high-reflectance AlN/GaN distributed Bragg-reflectors by inserting AlN/GaN superlattice	2009-05-01
56	Performance Enhancement of a-Plane Light-Emitting Diodes Using InGaN/GaN Superlattices	2009-04-01
57	Effects of Inhomogeneous Gain and Loss on Nitride-Based Vertical-Cavity Surface Emitting Lasers	2009-04-01
58	Power Enhancement of GaN-Based Flip-Chip Light-Emitting Diodes with Triple Roughened Surfaces	2009-04-01
59	Large Vacuum Rabi Splitting in ZnO-Based Microcavities	2009-01-01
60	Polarization Switching in 1.3-mu m Quantum Dot Vertical Cavity Surface Emitting Lasers	2009-01-01
61	Efficiency Enhancement of GaN/InGaN Vertical-Injection Light Emitting Diodes Using Distinctive Indium-Tin-Oxide Nanorods	2009-01-01
62	Recent Progress in Electrically Pumped Blue GaN-Based VCSELs	2009-01-01
63	Beam Shaping of GaN/InGaN Vertical-Injection Light Emitting Diodes via High-Aspect-Ratio Nanorod Arrays	2009-01-01
64	GaN-based film-transferred light-emitting diodes with photonic crystal	2009-01-01
65	Electron-beam Evaporation of Distinctive Indium-tin-oxide Nanorods for Enhanced Light Extraction from InGaN/GaN Light Emitting Diodes	2009-01-01
66	High-reflectivity ultraviolet AlN/AlGaN distributed Bragg reflectors grown by metalorganic chemical vapor deposition	2008-11-15
67	Characteristics of a-plane GaN with the SiN(x) insertion layer grown by metal-organic chemical vapor deposition	2008-11-15
68	Efficiency enhancement of UV/blue light emitting diodes via nanoscaled epitaxial lateral overgrowth of GaN on a SiO(2) nanorod-array patterned sapphire substrate	2008-11-15
69	Lasing Behavior, Gain Property, and Strong Coupling Effects in GaN-Based Vertical-Cavity Surface-Emitting Lasers	2008-08-01
70	Investigation on microstructure in GaN epitaxial growth on the stripe-patterned r-plane sapphire substrates	2008-04-01
71	Tunable light emissions from thermally evaporated In2O3 nanostructures grown at different growth temperatures	2008-04-01
72	Characteristics of ultraviolet nonpolar InGaN/GaN light-emitting diodes using trench epitaxial lateral overgrowth technology	2008-04-01
73	A simple model for cavity enhanced slow lights in vertical cavity surface emission lasers	2008-04-01
74	Metal organic chemical vapor deposition growth of GaN-based light emitting diodes with naturally formed nano pyramids	2008-04-01
75	Thermally evaporated In2O3 nanoloquats with oxygen flow-dependent optical emissions	2008-02-15
76	Fabricated nano-disk InGaN/GaN multi-quantum well of the inverse hexagonal pyramids	2008-02-01
77	AlGaN/GaN multiple quantum wells grown by using atomic layer deposition technique	2008-01-01
78	HIGH EFFICIENCY GALLIUM ARSENIDE SOLAR CELLS USING INDIUM-TIN-OXIDE NANO-COLUMNS	2008-01-01
79	Anisotropy light extraction with high polarization ratio from photonic crystal fight-emitting diodes	2008-01-01
80	AlGaN/GaN Multiple Quantum Wells Grown By Atomic Layer Deposition	2008-01-01
81	Micro-Photoluminescence from a Single InGaN-based Nano-Pillar Fabricated by Focused Ion Beam Milling	2008-01-01
82	High Efficiency White LEDs with 2D Photonic Quasi-Crystal and Patterned Sapphire Substrate	2008-01-01
83	Composition Dependence of Infrared Optical Phonon Modes in AlGaN Epilayers Grown on Sapphire Substrates	2008-01-01
84	CW Lasing of Current Injection Blue GaN-Based Vertical Cavity Surface Emitting Lasers	2008-01-01
85	Infrared reflectance of optical phonon modes in AlGaN epitaxial layers grown on sapphire substrates - art. no. 68941U	2008-01-01
86	Azimuthal anisotropy of light extraction from photonic crystal light-emitting diodes	2008-01-01
87	Internal quantum efficiency behavior of a-plane and c-plane InGaN/GaN multiple quantum well with different indium compositions	2008-01-01
88	Optically pumped GaN-based vertical cavity surface emitting lasers: Technology and characteristics	2007-08-01
89	Synthesis of In2O3 nanocrystal chains and annealing effect on their optical properties	2007-07-01
90	Hybrid nitride microcavity using crack-free highly reflective AlN/GaN and Ta2O5/SiO2 distributed Bragg mirrors	2007-06-01
91	GaN alternating current light-emitting device	2007-06-01
92	Strong ultraviolet emission from InGaN/AlGaN multiple quantum well grown by multi-step process	2007-04-01
93	High-performance 650 nm resonant-cavity light-emitting diodes for plastic optical-fiber application	2007-04-01
94	GaN/AlGaN active regions for terahertz quantum cascade lasers grown by low-pressure metal organic vapor deposition	2007-01-01
95	Material and optical properties of trenched epitaxial lateral overgrowth of a-plane GaN	2007-01-01
96	LED light lit for field-sequential-color backlight system	2007-01-01
97	Ultraviolet Lasing Characteristics of a GaN Photonic Crystal Defect Emitter	2007-01-01
98	The Fabrication of Laser Array by Holographic Interference Lithography	2007-01-01
99	Emission Characteristics of InGaN/GaN Vertical-Cavity Surface-Emitting Lasers	2007-01-01
100	High Light-Extraction GaN-based Vertical LEDs With Double Diffuse Surfaces	2007-01-01
101	The Characteristics of a High-Q GaN Micro-cavity Light Emitting Diodes	2007-01-01
102	Characteristics of ultraviolet nonpolar InGaN/GaN light-emitting diodes using trench epitaxial lateral overgrowth technology	2007-01-01
103	Theoretical and experimental analysis of temperature-insensitive 655-nm resonant-cavity LEDs	2007-01-01
104	Optically and electrically pumped GaN-based VCSELs	2007-01-01
105	Optical properties of high density InGaN QDs grown by MOCVD	2006-07-01
106	Effect of nitrogen contents on the temperature dependence of photoluminescence in InGaAsN/GaAs single quantum wells	2006-07-01
107	Observation of strong red photoluminescence with broadband in indium oxynitride nanoparticles	2006-07-01
108	Fabrication of magnesium-doped gallium nitride nanorods and microphotoluminescence characteristics	2006-05-01
109	Enhanced light output in InGaN/GaN light emitting diodes with excimer laser etching surfaces	2006-04-01
110	Ultraviolet lasing of sol-gel-derived zinc oxide polycrystalline films	2006-04-01
111	Fabrication and characteristics of GaN-based microcavity light-emitting diodes with high reflectivity AIN/GaN distributed Bragg reflectors	2006-04-01
112	Study of InGaN multiple quantum dots by metal organic chemical vapor deposition	2006-04-01
113	MOCVD growth of highly strained 1.3 mu m InGaAs : Sb/GaAs vertical cavity surface emitting laser	2006-01-25
114	Quaternary AlInGaN multiple quantum well 368 nm light-emitting diode	2006-01-25
115	Effects of doping concentration and annealing temperature on properties of highly-oriented al-doped ZnO films	2006-01-18
116	Effects of growth interruption time on InGaN/GaN quantum dots grown by metal organic chemical vapor deposition - art. no. 612102	2006-01-01
117	Self-assembled Ni nanodot on SiO(2) film-a novel reactive ion etching mask for Si nanopillar formation on Si substrate	2006-01-01
118	Undoped InP sandwiched InGaAs p-i-n photodetector with partially p-doped photoabsorption layer grown on linearly graded metamorphic InxGa1-xP buffered GaAs substrate - art. no. 61190L	2006-01-01
119	Effects of N2O fluence on the PECVD-grown Si-rich SiOx with buried Si nanocrystals	2005-01-01
120	CO2 laser annealing synthesis of silicon nanocrystals buried in Si-rich SiO2	2005-01-01
121	Effect of different n-electrode patterns on optical characteristics of large-area p-side down InGaN light-emitting diodes fabricated by laser lift-off	2005-01-01
122	10Gbps operation of a metamorphic InGaP buffered In0.53Ga0.47As p-i-n photodetector grown on GaAs substrate - art. no. 602023	2005-01-01
123	Improved near-infrared luminescence of si-rich SiO2 with buried Si nanocrystals grown by PECVD at optimized N2O fluence	2005-01-01
124	Fabrication of high speed and reliable 850nm oxide-confined VCSELs for 10Gb/s data communication	2005-01-01
125	Low-leakage In(0.53)Ga(0.47)As p-i-n photodetector fabricated on GaAs substrate with linearly graded metamorphic In(x)Ga(1-x)P buffer	2005-01-01
126	Silicon defect and nanocrystal related white and red electroluminescence of Si-rich SiO2 based metal-oxide-semiconductor diode	2005-01-01
127	Singlemode monolithically quantum-dot vertical-cavity surface-emitting laser in 1.3 mu m with side-mode suppression ratio > 30dB	2005-01-01
128	Optically pumped GaN-based vertical cavity surface emitting laser at room temperature	2005-01-01
129	An optically pumped blue GaN-based vertical-cavity surface emitting laser employing AIN/GaN and Ta2O5/NO2 distributed bragg reflectors	2005-01-01
130	Enhancement of light-output of GaN-based light-emitting diodes by bias-assisted photoelectrochemical oxidation of p-GaN in H2O	2005-01-01
131	Improvement in light-output efficiency of near-ultraviolet InGaN-GaN LEDs fabricated on stripe patterned sapphire substrate	2005-01-01
132	Single mode output (SMSR > 40 dB) utilizing photonic crystal on proton-implanted vertical-cavity surface-emitting lasers	2005-01-01
133	MOCVD growth of highly strained InGaAs : Sb-GaAs-GaAsP quantum well vertical cavity surface-emitting lasers with 1.27 mu m emission	2004-12-10
134	Improvement of high-speed oxide-confined vertical-cavity surface-emitting lasers	2004-04-01
135	MOCVD growth of high-performance InGaAsP/InGaP strain-compensated VCSELs with 850 nm emission wavelength	2004-01-19
136	Characteristics of stable emission GaN-based resonant-cavity light-emitting diodes	2004-01-19
137	Correlation between surface charge accumulation and excitation intensity dependent red-shifted micro-photoluminescence of Si-implanted quartz with embedded Si nanocrystals	2004-01-01
138	Improvement of kink characteristic of proton implanted VCSEL with ITO overcoating	2004-01-01
139	Improvement of high speed performance for 10-Gb/s 850-nm VCSELs using InGaAsP/InGaP strain-compensated MQWs	2004-01-01
140	Large emitting area GaN based light emitting diode fabricated on conducting copper substrates	2004-01-01
141	InGaN-based light-emitting diode with undercut side wall	2004-01-01
142	Fabrication of InGaN multi-quantum-well nanorod by Ni nano-mask	2004-01-01
143	Simulation and analysis of 1300-nm In0.4Ga0.6As0.986N0.014/GaAs1-xNx quantum-well lasers with various GaAs1-xNx strain compensated barriers	2004-01-01
144	High performance 1.27 mu m InGaAs : Sb-GaAsP quantum wells vertical cavity surface emitting laser	2004-01-01
145	Fabrication of p-side down GaN vertical ligbt emitting diodes on copper substrates by laser lift-off	2004-01-01
146	REDUCED COMPLEXITY SEQUENTIAL-DECODING SCHEME FOR THE MULTIPLE TRELLIS-CODED MODULATION (MTCM)	1994-01-01

Thesis

序號 No.	標題 Title	著作日期 Date
1	PM2.5水溶性無機鹽微粒與前驅氣體之PPWD-PILS的驗證與應用	2014
2	三五族晶片與圖形化矽基板的直接鍵合	2014
3	奈米結構銅銦鎵硒太陽能電池之研究	2014
4	鋰電池高容量複合正極材料最佳製程研究	2013
5	利用內嵌布拉格反射鏡之兩段式分佈回饋型雷射產生可調變之微波訊號	2013
6	垂直式LED元件光電特性之研究	2013
7	探討與改善氮化銦鎵/氮化鎵太陽能電池效率之研究	2013
8	在蜂巢網路的機器通訊網路下之能量效益群組傳輸	2013
9	次世代新穎氮化銦鎵/氮化鎵半極性奈米金字塔發光二極體之磊晶成長與元件特性之研究	2013
10	模擬氮化銦鎵太陽能電池在非極性面藍寶石基版上生長	2013
11	利用奈米陣列結構提高HIT太陽能電池電流密度	2013
12	用於評估早產兒經口餵食狀態之無線多參數監測系統設計	2013
13	探討平頭式氮化銦鎵與氮化鎵多重量子井包覆奈米柱核殼結構綠光發光二極體之成長與光電特性	2013
14	顯示器之LED 背光組合功耗及效率之研究	2013
15	利用下轉換機制提升太陽能電池效率	2013
16	利用可撓式螢光粉膜片與混合式螢光粉結構製作高效率白光發光二極體	2013
17	利用能帶結構設計改善氮化銦鎵綠光發光二極體之外部量子效率和高電流效率下降現象	2013
18	室溫下金屬鍍膜氮化鎵之手性結構之雷射特性	2013
19	探討與改進氮化鎵發光二極體中的效率下降現象	2012
20	高效率敏化之太陽能光電元件	2012
21	室溫下金屬塗層氮化鎵之光柵結構之雷射特性	2012
22	利用氧化鋯奈米粒子增進白光發光二極體之色均勻度及發光效率	2012
23	利用布拉格反射鏡製作之高發光效率與高光品質之前瞻量子點發光照明元件	2012
24	Improvement of Crystalline Quality and Light Extraction Efficiency in GaN-based Light Emitting Diodes by Nanoimprint Lithography	2012
25	利用三維空氣空缺增強氮化銦鎵多重量子井太陽能電池之光吸收	2012
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34	具有不同氧化銦錫結構之寬能隙氮化鎵太陽能電池研究	2011
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138	面射型雷射製程技術之研究	2005
139	850nm面射型雷射之高速特性與等效電路萃取	2005
140	中斷成長在有機金屬氣相沉積氮化銦鎵量子點時的效應研究	2005
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143	利用寬能隙矽氧奈米結構物製作紫外到可見光之光偵測器	2005
144	利用微米透鏡陣列與表面粗化加強垂直式氮化鎵發光二極體發光強度	2005
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147	利用濕蝕刻基板提高氮化鎵發光二極體外部量子效應	2005
148	光子晶體面射型雷射特性之研究	2005
149	LED背光源整合系統設計之色溫管理	2005
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152	金屬化製程對分離式閘極快閃記憶體抹除特性之影響	2004
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156	利用雷射剝離技術製作光激發氮化鎵族垂直共振腔面射型雷射之特性研究	2004
157	InAlGaN在藍紫光半導體雷射和紫外光發光二極體的模擬研究	2004
158	介相材料建構奈米光電元件特性之研究	2004
159	氮化鎵微米孔矩陣發光二極體	2004
160	850nm高速和光子晶體面射型雷射之特性量測與分析	2004
161	長波長與短波長面射型雷射製程之研究	2004
162	氧化侷限面射型雷射之二維(時間和空間)模擬分析	2003
163	以10GHz鎖相迴路相移器為基礎的鎖模光纖雷射頻率穩定與時基調整電路	2003
164	快速零抹拭循序式解碼器之研究	1995

郭浩中 Kuo, Hao-Chung

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