郭浩中

郭浩中 Kuo, Hao-Chung

電子郵件/E-mail:hckuo@faculty.nctu.edu.tw

服務單位/Department:電機學院 / 顯示科技研究所

著作期間/Publish Period:1994-01-01 - 2014-11-11

著作統計/Statistics

Article(399)
Books(1)
Others(6)
Patents(37)
Plan(28)
Thesis(164)

Article

序號
No.
標題
Title
著作日期
Date
1 Efficiency improvement of GaN-based ultraviolet light-emitting diodes with reactive plasma deposited AlN nucleation layer on patterned sapphire substrate
2014-09-16
2 Toward Omnidirectional Light Absorption by Plasmonic Effect for High-Efficiency Flexible Nonvacuum Cu(In,Ga)Se-2 Thin Film Solar Cells
2014-09-01
3 Fabrication and characterization of back-side illuminated InGaN/GaN solar cells with periodic via-holes etching and Bragg mirror processes
2014-08-25
4 Design and fabrication of a InGaN vertical-cavity surface-emitting laser with a composition-graded electron-blocking layer
2014-08-01
5 Performance enhancement of GaN-based flip-chip ultraviolet light-emitting diodes with a RPD AlN nucleation layer on patterned sapphire substrate
2014-08-01
6 Superhydrophobic, antiadhesive, and antireflective surfaces mediated by hybrid biomimetic salvinia leaf with moth-eye structures
2014-08-01
7 A Highly Efficient Hybrid GaAs Solar Cell Based on Colloidal-Quantum-Dot-Sensitization 2014-07-18
8 High performance 380-nm ultraviolet light-emitting-diodes with 3% efficiency droop by using free-standing GaN substrate manufacturing from GaAs substrate
2014-07-07
9 High density GaN/AlN quantum dots for deep UV LED with high quantum efficiency and temperature stability 2014-06-05
10 Polarization ratio enhancement of a-plane GaN light emitting diodes by asymmetric two-dimensional photonic crystals
2014-05-21
11 High-Efficiency and Crack-Free InGaN-Based LEDs on a 6-inch Si (111) Substrate With a Composite Buffer Layer Structure and Quaternary Superlattices Electron-Blocking Layers
2014-05-01
12 Natural substrate lift-off technique for vertical light-emitting diodes
2014-04-01
13 Enhanced light harvesting of nitride-based nanopillars covered with ZnO using indium-tin oxide nanowhiskers
2014-04-01
14 The Effect of CdS QDs Structure on the InGaP/GaAs/Ge Triple Junction Solar Cell Efficiency 2014-03-01
15 Improvement of emission uniformity by using micro-cone patterned PDMS film
2014-02-24
16 Flexible-textured polydimethylsiloxane antireflection structure for enhancing omnidirectional photovoltaic performance of Cu(In,Ga)Se-2 solar cells
2014-02-10
17 Hole injection and electron overflow improvement in InGaN/GaN light-emitting diodes by a tapered AlGaN electron blocking layer
2014-01-13
18 Performance of GaN-based light-emitting diodes fabricated using GaN epilayers grown on silicon substrates
2014-01-13
19 White light emitting diodes with enhanced CCT uniformity and luminous flux using ZrO2 nanoparticles
2014-01-01
20 Enabling Lambertian-Like Warm White Organic Light-Emitting Diodes with a Yellow Phosphor Embedded Flexible Film
2014-01-01
21 Device Modeling of the Performance of Cu(In,Ga)Se-2 Solar Cells with V-Shaped Bandgap Profiles
2014-01-01
22 Efficiency and Droop Improvement in GaN-Based High-Voltage Flip Chip LEDs
2014-01-01
23 Waveguide based energy transfer with gold nanoclusters for detection of hydrogen peroxide
2014-01-01
24 Investigation and Comparison of the GaN-Based Light-Emitting Diodes Grown on High Aspect Ratio Nano-Cone and General Micro-Cone Patterned Sapphire Substrate
2013-12-01
25 Room temperature ultraviolet GaN metal-coated nanorod laser
2013-11-04
26 Advantages of Blue LEDs With Graded-Composition AlGaN/GaN Superlattice EBL
2013-11-01
27 An Investigation of the Optical Analysis in White Light-Emitting Diodes With Conformal and Remote Phosphor Structure
2013-11-01
28 Electrically driven green, olivine, and amber color nanopyramid light emitting diodes
2013-10-07
29 Improving the Angular Color Uniformity of Hybrid Phosphor Structures in White Light-Emitting Diodes
2013-10-01
30 Effect of the Thermal Characteristics of Phosphor for the Conformal and Remote Structures in White Light-Emitting Diodes
2013-10-01
31 A look into the origin of shunt leakage current of Cu(In,Ga)Se-2 solar cells via experimental and simulation methods
2013-10-01
32 Improving efficiency of InGaN/GaN multiple quantum well solar cells using CdS quantum dots and distributed Bragg reflectors
2013-10-01
33 The metal grating design of plasmonic hybrid III-V/Si evanescent lasers
2013-08-26
34 Multi-functional stacked light-trapping structure for stabilizing and boosting solar-electricity efficiency of hydrogenated amorphous silicon solar cells
2013-08-12
35 Distance dependence of energy transfer from InGaN quantum wells to graphene oxide
2013-08-01
36 Non-antireflective Scheme for Efficiency Enhancement of Cu(In,Ga)Se-2 Nanotip Array Solar Cells
2013-08-01
37 Projected Efficiency of Polarization-Matched p-InxGa1-xN/i-InyGa1-yN/n-GaN Double Heterojunction Solar Cells
2013-07-01
38 Enhanced Luminous Efficiency of WLEDs Using a Dual-Layer Structure of the Remote Phosphor Package
2013-06-15
39 The site-selective excitation and the dynamical electron-lattice interaction on the luminescence of YBO3: Sb3+
2013-05-01
40 Efficiency and Droop Improvement in Hybrid Warm White LEDs Using InGaN and AlGaInP High-Voltage LEDs
2013-04-01
41 Enhanced Light Output Power and Growth Mechanism of GaN-Based Light-Emitting Diodes Grown on Cone-Shaped SiO2 Patterned Template
2013-04-01
42 High thermal stability of correlated color temperature using current compensation in hybrid warm white high-voltage LEDs 2013-03-11
43 Microstructure and magnetic properties of oxidized titanium nitride thin films in situ grown by pulsed laser deposition
2013-02-20
44 Optical coupling from InGaAs subcell to InGaP subcell in InGaP/InGaAs/Ge multi-junction solar cells 2013-01-14
45 Large-area ultraviolet GaN-based photonic quasicrystal laser with high-efficiency green color emission of semipolar {10-11} In0.3Ga0.7N/GaN multiple quantum wells
2013-01-07
46 Efficient energy transfer from InGaN quantum wells to Ag nanoparticles
2013-01-01
47 Enhanced broadband and omnidirectional performance of Cu(In,Ga)Se-2 solar cells with ZnO functional nanotree arrays
2013-01-01
48 Dandelion-shaped nanostructures for enhancing omnidirectional photovoltaic performance
2013-01-01
49 Effect of the surface-plasmon-exciton coupling and charge transfer process on the photoluminescence of metal-semiconductor nanostructures
2013-01-01
50 Resonant-Enhanced Full-Color Emission of Quantum-Dot-Based Display Technology Using a Pulsed Spray Method
2012-12-19
51 Efficiency and droop improvement in green InGaN/GaN light-emitting diodes on GaN nanorods template with SiO2 nanomasks
2012-12-03
52 Optimization of the Single-Phased White Phosphor of Li2SrSiO4:Eu2+, Ce3+ for Light-Emitting Diodes by Using the Combinatorial Approach Assisted with the Taguchi Method
2012-12-01
53 Observation of unusual optical transitions in thin-film Cu(In,Ga)Se-2 solar cells 2012-11-05
54 Modeling and Optimization of Sub-Wavelength Grating Nanostructures on Cu(In,Ga)Se-2 Solar Cell
2012-10-01
55 Enhancement of power conversion efficiency in GaAs solar cells with dual-layer quantum dots using flexible PDMS film
2012-09-01
56 A New Parallel Domain-Decomposed Chebyshev Collocation Method for Atmospheric and Oceanic Modeling 2012-08-01
57 The Influence of the Thermal Effect on CdSe/ZnS Quantum Dots in Light-Emitting Diodes
2012-07-15
58 Light Extraction Enhancement of GaN-Based Light-Emitting Diodes Using Crown-Shaped Patterned Sapphire Substrates
2012-07-15
59 Improvement in uniformity of emission by ZrO2 nano-particles for white LEDs
2012-07-05
60 UV-Visible Light-Trapping Structure of Loosely Packed Submicrometer Silica Sphere for Amorphous Silicon Solar Cells
2012-07-01
61 Fabrication and luminescent properties of core-shell InGaN/GaN multiple quantum wells on GaN nanopillars
2012-06-25
62 Ultraviolet emission efficiency enhancement of a-plane AlGaN/GaN multiple-quantum-wells with increasing quantum well thickness
2012-06-25
63 A pulsated weak-resonant-cavity laser diode with transient wavelength scanning and tracking for injection-locked RZ transmission
2012-06-18
64 Numerical Study of (0001) Face GaN/InGaN p-i-n Solar Cell With Compositional Grading Configuration
2012-06-15
65 Ultrafast carrier dynamics in Cu(In,Ga)Se-2 thin films probed by femtosecond pump-probe spectroscopy
2012-06-04
66 Lasing action in gallium nitride quasicrystal nanorod arrays
2012-05-21
67 Magnitude-tunable sub-THz shear phonons in a non-polar GaN multiple-quantum-well p-i-n diode
2012-05-14
68 Nano-patterned glass superstrates with different aspect ratios for enhanced light harvesting in a-Si:H thin film solar cells 2012-05-07
69 Improvement of lumen efficiency in white light-emitting diodes with air-gap embedded package
2012-05-01
70 Efficiency and Droop Improvement in InGaN/GaN Light-Emitting Diodes by Selective Carrier Distribution Manipulation
2012-04-01
71 Large Area of Ultraviolet GaN-Based Photonic Quasicrystal Laser
2012-04-01
72 Light Output Enhancement of GaN-Based Light-Emitting Diodes by Optimizing SiO2 Nanorod-Array Depth Patterned Sapphire Substrate
2012-04-01
73 A novel randomly textured phosphor structure for highly efficient white light-emitting diodes
2012-03-16
74 Highly efficient CdS-quantum-dot-sensitized GaAs solar cells 2012-03-12
75 Antireflection and light trapping of subwavelength surface structures formed by colloidal lithography on thin film solar cells
2012-03-01
76 Electrically driven nanopyramid green light emitting diode
2012-02-06
77 High efficiency GaN-based light-emitting diodes with embedded air voids/SiO(2) nanomasks 2012-02-03
78 Investigation of Hot-Carrier Stress Effect on High-Frequency Performance of Laterally Diffused Metal-Oxide-Semiconductor Transistors
2012-02-01
79 Crystal structure characterization, optical and photoluminescent properties of tunable yellow- to orange-emitting Y-2(Ca,Sr)F4S2:Ce3+ phosphors for solid-state lighting
2012-01-01
80 Room temperature lasing with high group index in metal-coated GaN nanoring
2011-12-19
81 Enhanced Output Power of GaN-Based Resonance Cavity Light-Emitting Diodes With Optimized ITO Design
2011-12-15
82 Study of 375 nm ultraviolet InGaN/AlGaN light-emitting diodes with heavily Si-doped GaN transition layer in growth mode, internal quantum efficiency, and device performance
2011-12-15
83 Optical investigation of A-plane ZnO/ZnMgO multiple quantum wells grown by pulsed laser deposition
2011-12-01
84 Characteristics of Current-Injected GaN-Based Vertical-Cavity Surface-Emitting Lasers
2011-11-01
85 Hole transport improvement in InGaN/GaN light-emitting diodes by graded-composition multiple quantum barriers
2011-10-24
86 Large Scale Single-Crystal Cu(In,Ga)Se(2) Nanotip Arrays For High Efficiency Solar Cell 2011-10-01
87 Conversion Efficiency Enhancement of GaN/In(0.11)Ga(0.89)N Solar Cells With Nano Patterned Sapphire and Biomimetic Surface Antireflection Process 2011-09-15
88 Investigation of Emission Polarization and Strain in InGaN-GaN Multiple Quantum Wells on Nanorod Epitaxially Lateral Overgrowth Templates
2011-09-15
89 Lasing at exciton transition in optically pumped gallium nitride nanopillars
2011-09-12
90 Enhanced efficiency for c-Si solar cell with nanopillar array via quantum dots layers
2011-09-12
91 Angle-resolved characteristics of silicon photovoltaics with passivated conical-frustum nanostructures
2011-09-01
92 A Novel Tunable Green- to Yellow-Emitting beta-YFS:Ce(3+) Phosphor for Solid-State Lighting 2011-08-01
93 Efficiency and Droop Improvement in GaN-Based High-Voltage Light-Emitting Diodes
2011-08-01
94 Optical Properties of A-Plane InGaN/GaN Multiple Quantum Wells Grown on Nanorod Lateral Overgrowth Templates
2011-08-01
95 High Q microcavity light emitting diodes with buried AlN current apertures
2011-07-25
96 Inductively coupled plasma grown semiconductor films for low cost solar cells with improved light-soaking stability
2011-07-18
97 Embedded biomimetic nanostructures for enhanced optical absorption in thin-film solar cells 2011-07-04
98 Patterned structure of REMOTE PHOSPHOR for phosphor-converted white LEDs 2011-07-04
99 Highly Efficient and Bright LEDs Overgrown on GaN Nanopillar Substrates
2011-07-01
100 Elucidating the Physical Property of the InGaN Nanorod Light-Emitting Diode: Large Tunneling Effect
2011-07-01
101 Optical and Electrical Properties of GaN-Based Light Emitting Diodes Grown on Micro- and Nano-Scale Patterned Si Substrate
2011-07-01
102 Reduction of Efficiency Droop in InGaN Light-Emitting Diode Grown on Self-Separated Freestanding GaN Substrates
2011-06-15
103 Efficiency Enhancement in Single-Junction InGaP Solar Cells by Using Self-Assembled Nanospheres
2011-06-01
104 Enhanced omnidirectional photon coupling via quasi-periodic patterning of indium-tin-oxide for organic thin-film solar cells
2011-06-01
105 Investigation of efficiency droop for InGaN-based UV light-emitting diodes with InAlGaN barrier
2011-05-23
106 Light Output Enhancement of UV Light-Emitting Diodes With Embedded Distributed Bragg Reflector
2011-05-15
107 Light Output Enhancement of UV Light-Emitting Diodes With Embedded Distributed Bragg Reflector
2011-05-15
108 High Extraction Efficiency of GaN-Based Vertical-Injection Light-Emitting Diodes Using Distinctive Indium-Tin-Oxide Nanorod by Glancing-Angle Deposition
2011-05-01
109 Tunable Light Emission from GaN-Based Photonic Crystal with Ultraviolet AlN/AlGaN Distributed Bragg Reflector
2011-04-01
110 Light Enhancement of Silicon-Nanocrystal-Embedded SiO(x) Film on Silicon-on-Insulator Substrate 2011-04-01
111 Lasing in metal-coated GaN nanostripe at room temperature
2011-03-28
112 Enhanced electron-hole plasma stimulated emission in optically pumped gallium nitride nanopillars
2011-03-21
113 Beyond-Bandwidth Electrical Pulse Modulation of a TO-Can Packaged VCSEL for 10 Gbit/s Injection-Locked NRZ-to-RZ Transmission
2011-03-15
114 Energy transfer from InGaN quantum wells to Au nanoclusters via optical waveguiding
2011-03-14
115 Enhanced Stimulated Emission from Optically Pumped Gallium Nitride Nanopillars
2011-02-01
116 2-Step self-assembly method to fabricate broadband omnidirectional antireflection coating in large scale
2011-02-01
117 Investigation of low-temperature electroluminescence of InGaN/GaN based nanorod light emitting arrays
2011-01-28
118 Enhanced conversion efficiency of a crystalline silicon solar cell with frustum nanorod arrays
2011-01-03
119 Improvement in efficiency droop of GaN-based light-emitting diodes by optimization of active regions
2011-01-01
120 GaN-Based LEDs Grown on HVPE Growth High Crystalline Quality Thick GaN Template
2011-01-01
121 Reduction of Efficiency Droop in Semipolar (1(1)over-bar01) InGaN/GaN Light Emitting Diodes Grown on Patterned Silicon Substrates
2011-01-01
122 In Situ and Self-Restorable Injection-Locking Monitor by Integrated Photodiode for FPLD WDM Transmitter
2011-01-01
123 Hole injection and efficiency droop improvement in InGaN/GaN light-emitting diodes by band-engineered electron blocking layer
2010-12-27
124 Characteristics of efficiency droop in GaN-based light emitting diodes with an insertion layer between the multiple quantum wells and n-GaN layer
2010-12-20
125 Characterizations of low-temperature electroluminescence from ZnO nanowire light-emitting arrays on the p-GaN layer
2010-12-15
126 Light Emission Enhancement of GaN-Based Photonic Crystal With Ultraviolet AlN/AlGaN Distributed Bragg Reflector
2010-11-15
127 Efficiency droop alleviation in InGaN/GaN light-emitting diodes by graded-thickness multiple quantum wells
2010-11-01
128 Investigation of Carrier Transient Response of Nanopatterned n-ZnO/a-Si(i)/p(+)-Si Photodiodes
2010-11-01
129 Long-Cavity Fabry-Perot Laser Amplifier Transmitter With Enhanced Injection-Locking Bandwidth for WDM-PON Application
2010-10-15
130 Structural Effects on Highly Directional Far-Field Emission Patterns of GaN-Based Micro-Cavity Light-Emitting Diodes With Photonic Crystals
2010-10-01
131 Light Extraction Efficiency Enhancement of GaN-Based Light Emitting Diodes on n-GaN Layer Using a SiO(2) Photonic Quasi-Crystal Overgrowth 2010-10-01
132 Optical characteristics of a-plane ZnO/Zn(0.8)Mg(0.2)O multiple quantum wells grown by pulsed laser deposition 2010-10-01
133 Characteristics of emission polarization in a-plane nanorods embedded with InGaN/GaN multiple quantum wells
2010-09-15
134 Continuous wave operation of current injected GaN vertical cavity surface emitting lasers at room temperature
2010-08-16
135 Particular Failure Mechanism of GaN-Based Alternating Current Light-Emitting Diode Induced by GaO(x) Oxidation 2010-08-01
136 Highly-directional emission patterns based on near single guided mode extraction from GaN-based ultrathin microcavity light-emitting diodes with photonic crystals
2010-07-05
137 High extraction efficiency GaN-based light-emitting diodes on embedded SiO(2) nanorod array and nanoscale patterned sapphire substrate 2010-06-28
138 Study of InGaN-GaN Light-Emitting Diodes With Different Last Barrier Thicknesses
2010-06-15
139 Low efficiency droop in blue-green m-plane InGaN/GaN light emitting diodes
2010-06-07
140 Light-Output-Power Enhancement of GaN-Based Light-Emitting Diodes on an n-GaN Layer Using a SiO(2) Photonic Quasi-Crystal Overgrowth 2010-06-01
141 Efficiency Improvement of GaN-Based LEDs With a SiO(2) Nanorod Array and a Patterned Sapphire Substrate 2010-06-01
142 Enhancement of light output power of GaN-based light-emitting diodes using a SiO(2) nano-scale structure on a p-GaN surface 2010-06-01
143 Investigation of light absorption properties and acceptance angles of nanopatterned GZO/a-Si/p(+)-Si photodiodes
2010-05-28
144 InGaN-based light-emitting diodes grown and fabricated on nanopatterned Si substrates
2010-05-17
145 Ultraviolet GaN-based microdisk laser with AlN/AlGaN distributed Bragg reflector
2010-04-12
146 Investigation of wavelength-dependent efficiency droop in InGaN light-emitting diodes
2010-03-01
147 Growth and characterization of a-plane Al(x)Ga(1-x)N alloys by metalorganic chemical vapor deposition 2010-03-01
148 Lasing characteristics at different band edges in GaN photonic crystal surface emitting lasers
2010-02-15
149 Temperature-Dependent Electroluminescence Efficiency in Blue InGaN-GaN Light-Emitting Diodes With Different Well Widths
2010-02-15
150 Polarization Characteristics of Quantum-Dot Vertical-Cavity Surface-Emitting Laser With Light Injection
2010-02-01
151 Efficiency Improvement of Single-Junction In(0.5)Ga(0.5)P Solar Cell with Compositional Grading p-Emitter/Window Capping Configuration 2010-01-01
152 Improvement in Crystalline Quality of InGaN-Based Epilayer on Sapphire via Nanoscaled Epitaxial Lateral Overgrowth
2010-01-01
153 Double Photonic Quasi-Crystal Structure Effect on GaN-Based Vertical-Injection Light-Emitting Diodes
2010-01-01
154 GaN Thickness Effect on Directional Light Enhancement from GaN-Based Film-Transferred Photonic Crystal Light-Emitting Diodes
2010-01-01
155 Divergent Far-Field III-Nitride Ultrathin Film-Transferred Photonic Crystal Light-Emitting Diodes
2010-01-01
156 Self-Assembled Two-Dimensional Surface Structures for Beam Shaping of GaN-Based Vertical-Injection Light-Emitting Diodes
2010-01-01
157 Low Droop Nonpolar GaN/InGaN Light Emitting Diode Grown on m-Plane GaN Substrate
2010-01-01
158 The Lasing Characteristics of GaN-based Two-dimensional Photonic Crystal Surface Emitting Lasers
2010-01-01
159 Output Power Enhancement of Light Emitting Diodes with Defect Passivation layer 2010-01-01
160 High Efficiency InGaP/GaAs Solar Cell with Sub-wavelength Structure on AlInP Window Layer 2010-01-01
161 Observation of Polariton Dispersions for ZnO Microcavities in Strong Couple Regime 2010-01-01
162 Angular-resolved Lasing Characteristics at Different Band Edges in GaN Photonic Crystal Surface Emitting Lasers 2010-01-01
163 Hole shape effect of photonic crystals on the guided resonance modes in GaN-based ultra-thin film-transferred light-emitting diodes 2010-01-01
164 Characterization of a-plane green light-emitting diodes using nanorod lateral overgrowth 2010-01-01
165 Efficiency Enhancement InGaP/GaAs Dual-junction Solar Cell by Broad-band and Omnidirectional Antireflection Nanorod Arrays 2010-01-01
166 Antireflection and Light Trapping of Periodic Subwavelength Surface Structures Formed by Colloidal Monolayer Spheres Lithography on Thin Film Solar Cells 2010-01-01
167 Investigation of Efficiency Droop in Blue InGaN/GaN Light-Emitting Diodes with Different Well Widths 2010-01-01
168 Internal Quantum Efficiency Measurement in InGaN/GaN UV LEDs with Patterned Sapphire Substrate by Photoluminescence and Electroluminescence Method 2010-01-01
169 Observation of Laser Action from Gallium Nitride nanorods under optical pumping 2010-01-01
170 LARGE-SCALE AND ENHANCED EFFICIENCY C-SI SOLAR CELL WITH MOTH-EYE-LIKE BY USING SELF-ASSEMBLED LITHOGRAPHY 2010-01-01
171 ANGLE-RESOLVED REFLECTANCE SPECTROSCOPY OF PASSIVATED TRAPEZOID-CORN NANOSTRUCTURES FOR CRYSTALLINE SILICON PHOTOVOLTAICS 2010-01-01
172 EFFICIENCY ENHANCEMENT InGaP/GaAs DUAL-JUNCTION SOLAR CELL WITH SUB-WAVELENGTH ANTIREFLECTION NANOROD ARRAYS 2010-01-01
173 Defect selective passivation in GaN epitaxial growth and its application to light emitting diodes
2009-11-23
174 Oblique electron-beam evaporation of distinctive indium-tin-oxide nanorods for enhanced light extraction from InGaN/GaN light emitting diodes
2009-11-09
175 Photogeneration of coherent shear phonons in orientated wurtzite semiconductors by piezoelectric coupling 2009-11-01
176 Improved Light Output Power of GaN-Based Light-Emitting Diodes Using Double Photonic Quasi-Crystal Patterns
2009-11-01
177 Nonvolatile memory with switching interfacial polar structures of nano Si-in-mesoporous silica
2009-10-05
178 Enhanced Light Extraction in Wafer-Bonded AlGaInP-Based Light-Emitting Diodes via Micro- and Nanoscale Surface Textured
2009-10-01
179 High-Performance InGaN-Based Green Resonant-Cavity Light-Emitting Diodes for Plastic Optical Fiber Applications
2009-09-15
180 Bilateral Exchange of Soft-Information for Iterative Reliability-Based Decoding with Adaptive Belief Propagation
2009-09-01
181 Investigation of GaN-based light emitting diodes with nano-hole patterned sapphire substrate (NHPSS) by nano-imprint lithography
2009-08-25
182 Characteristics of a-Plane Green Light-Emitting Diode Grown on r-Plane Sapphire
2009-08-15
183 Efficiency improvement of single-junction InGaP solar cells fabricated by a novel micro-hole array surface texture process
2009-08-12
184 Enhanced light output power of GaN-based vertical-injection light-emitting diodes with a 12-fold photonic quasi-crystal by nano-imprint lithography
2009-08-12
185 Freestanding high quality GaN substrate by associated GaN nanorods self-separated hydride vapor-phase epitaxy
2009-08-03
186 High efficiency light emitting diode with anisotropically etched GaN-sapphire interface
2009-07-27
187 Interfacial Polar-Bonding-Induced Multifunctionality of Nano-Silicon in Mesoporous Silica
2009-07-10
188 Effect of Controlled Growth Dynamics on the Microstructure of Nonpolar a-Plane GaN Revealed by X-ray Diffraction
2009-07-01
189 Study of the Excitation Power Dependent Internal Quantum Efficiency in InGaN/GaN LEDs Grown on Patterned Sapphire Substrate
2009-07-01
190 Size-Dependent Strain Relaxation and Optical Characteristics of InGaN/GaN Nanorod LEDs
2009-07-01
191 Far-Field and Near-Field Distribution of GaN-Based Photonic Crystal LEDs With Guided Mode Extraction
2009-07-01
192 Nanorod epitaxial lateral overgrowth of a-plane GaN with low dislocation density
2009-06-22
193 Near-infrared silicon quantum dots metal-oxide-semiconductor field-effect transistor photodetector
2009-06-15
194 Far-field of GaN film-transferred green light-emitting diodes with two-dimensional photonic crystals
2009-05-25
195 Extraction Efficiency Enhancement of GaN-Based Light-Emitting Diodes by Microhole Array and Roughened Surface Oxide
2009-05-01
196 Improving Light Output Power of the GaN-Based Vertical-Injection Light-Emitting Diodes by Mg(+) Implanted Current Blocking Layer 2009-05-01
197 Dynamic Characteristics and Linewidth Enhancement Factor of Quantum-Dot Vertical-Cavity Surface-Emitting Lasers
2009-05-01
198 Development of GaN-Based Vertical-Cavity Surface-Emitting Lasers
2009-05-01
199 Efficiency Enhancement of GaAs Photovoltaics Employing Antireflective Indium Tin Oxide Nanocolumns
2009-04-27
200 High output power density from GaN-based two-dimensional nanorod light-emitting diode arrays
2009-04-06
201 Numerical study of optical properties of InGaN multi-quantum-well laser diodes with polarization-matched AlInGaN barrier layers
2009-04-01
202 Improvement of the Efficiency of InGaN-GaN Quantum-Well Light-Emitting Diodes Grown With a Pulsed-Trimethylindium Flow Process
2009-04-01
203 Directional light extraction enhancement from GaN-based film-transferred photonic crystal light-emitting diodes
2009-03-23
204 Side-mode transmission diagnosis of a multichannel selectable injection-locked Fabry-Perot Laser Diode with anti-reflection coated front facet
2009-03-16
205 Optical properties of a-plane InGaN/GaN multiple quantum wells on r-plane sapphire substrates with different indium compositions
2009-03-15
206 Nitride-Based Thin-Film Light-Emitting Diodes With Photonic Quasi-Crystal Surface
2009-03-01
207 Efficiency Enhancement and Beam Shaping of GaN-InGaN Vertical-Injection Light-Emitting Diodes via High-Aspect-Ratio Nanorod Arrays
2009-01-01
208 Aspect-ratio-dependent ultra-low reflection and luminescence of dry-etched Si nanopillars on Si substrate
2009-01-01
209 Output Power Enhancement of Vertical-Injection Ultraviolet Light-Emitting Diodes by GaN-Free and Surface Roughness Structures 2009-01-01
210 Density-dependent energy relaxation of hot electrons in InN epilayers
2009-01-01
211 Improving Performance of InGaN/GaN Light-Emitting Diodes and GaAs Solar Cells Using Luminescent Gold Nanoclusters
2009-01-01
212 Enhancing the Emission Efficiency of In(0.2)Ga(0.8)N/GaN MQW Blue LED by Using Appropriately Misoriented Sapphire Substrates 2009-01-01
213 Carrier localization degree of In(0.2)Ga(0.8)N/GaN multiple quantum wells grown on vicinal sapphire substrates 2009-01-01
214 Blue GaN-based vertical cavity surface emitting lasers by CW current injection at 77K
2009-01-01
215 Numerical study on optimization of InGaN multi-quantum-well laser diodes with polarization-matched AlInGaN barrier layers 2009-01-01
216 Strong Exciton Polariton Dispersion in Multimode GaN Microcavity 2009-01-01
217 Investigation of Composition-Dependent Optical Phonon Modes in Al(x)Ga(1-x)N Epitaxial Layers Grown on Sapphire Substrates 2009-01-01
218 Novel Indium-Tin-Oxide Nano-Whiskers for Enhanced Transmission of Surface-Textured Silicon Photovoltaic Cells 2009-01-01
219 High Light-Extraction Efficiency GaN-Based Vertical Injection LEDs with Surface Nipple Array 2009-01-01
220 Lasing Characteristics of GaN-based Photonic Crystal Surface-Emitting Lasers 2009-01-01
221 Characteristics of Single-Chip GaN-Based Alternating Current Light-Emitting Diode
2008-12-01
222 Investigation of InGaN/GaN power chip light emitting diodes with TiO(2)/SiO(2) omnidirectional reflector
2008-12-01
223 High-Performance (Al(x)Ga(1-x))(0.5)In(0.5)P-Based Flip-Chip Light-Emitting Diode With a Geometric Sapphire Shaping Structure 2008-11-01
224 Optical study of a-plane InGaN/GaN multiple quantum wells with different well widths grown by metal-organic chemical vapor deposition
2008-11-01
225 High quality ultraviolet AlGaN/GaN multiple quantum wells with atomic layer deposition grown AlGaN barriers
2008-09-29
226 Thermally Evaporated In2O3 Nanoloquats with Tunable Broad-Band Emissions 2008-09-01
227 Numerical Study on Optimization of Active Layer Structures for GaN/AlGaN Multiple-Quantum-Well Laser Diodes
2008-09-01
228 Nanoscale epitaxial lateral overgrowth of GaN-based light-emitting diodes on a SiO(2) nanorod-array patterned sapphire template
2008-08-25
229 Strain relaxation induced microphotoluminescence characteristics of a single InGaN-based nanopillar fabricated by focused ion beam milling
2008-08-25
230 Relative Intensity Noise Characteristics of Long-Wavelength Quantum Dot Vertical-Cavity Surface-Emitting Lasers
2008-08-01
231 Investigation of GaN-based vertical-injection light-emitting diodes with GaN nano-cone structure by ICP etching
2008-07-25
232 Fabrication and Characterization of Temperature Insensitive 660-nm Resonant-Cavity LEDs
2008-07-01
233 Polarized light emission from photonic crystal light-emitting diodes
2008-06-16
234 Broadband and omnidirectional antireflection employing disordered GaN nanopillars
2008-06-09
235 Anisotropy of light extraction from GaN two-dimensional photonic crystals
2008-05-12
236 Enhanced light output from a nitride-based power chip of green light-emitting diodes with nano-rough surface using nanoimprint lithography
2008-05-07
237 Characteristics of InGaAs submonolayer quantum-dot and InAs quantum-dot photonic-crystal vertical-cavity surface-emitting lasers 2008-05-01
238 Enhanced light extraction of InGaN-based green LEDs by nano-imprinted 2D photonic crystal pattern
2008-05-01
239 Nano-processing techniques applied in GaN-Based light-emitting devices with self-assembly Ni nano-masks
2008-05-01
240 Study of GaN-based light-emitting diodes grown on chemical wet-etching-patterned sapphire substrate with V-shaped pits roughening surfaces
2008-05-01
241 Further enhancement of nitride-based near-ultraviolet vertical-injection light-emitting diodes by adopting a roughened mesh-surface
2008-05-01
242 Enhanced vertical extraction efficiency from a thin-film InGaN-GaN light-emitting diode using a 2-D photonic crystal and an omnidirectional reflector
2008-05-01
243 Ultrafast carrier dynamics of InGaAsN and InGaAs single quantum wells
2008-04-21
244 40 GHz Phase Shifter based on Semiconductor Laser
2008-04-10
245 CW lasing of current injection blue GaN-based vertical cavity surface emitting laser
2008-04-07
246 Improvement of light output in GaN-based power chip light-emitting diodes with a nano-rough surface by nanoimprint lithography
2008-04-01
247 Small GaN-based light-emitting diodes with a single electrode pad fabricated on a sapphire substrate
2008-04-01
248 Phase transformation and optical characteristics of porous germanium thin film
2008-03-31
249 Chirp and error rate analyses of an optical-injection gain-switching VCSEL based all-optical NRZ-to-PRZ converter
2008-03-31
250 Enhancing the light extraction of (AlxGa1-x)(0.5)In0.5P-based light-emitting diode fabricated via geometric sapphire shaping
2008-03-01
251 High-brightness InGaN-GaN flip-chip light-emitting diodes with triple-light scatteriny layers
2008-03-01
252 Characteristics of multileaf holey light-emitting diodes for fiber-optic communications
2008-02-01
253 High brightness GaN-based flip-chip light-emitting diodes by adopting geometric sapphire shaping structure
2008-02-01
254 Optically modulated internal strain in InGaN quantum dots grown on SiNx nano masks
2008-01-21
255 GaN-based two-dimensional surface-emitting photonic crystal lasers with AlN/GaN distributed Bragg reflector
2008-01-07
256 Characteristics of single-mode InGaAs sub-monolayer quantum-dot photonic-crystal VCSELs emitting in the 990 nm range
2008-01-01
257 Photonic-crystal light-emitting diodes on p-type GaAs substrates for optical communications
2008-01-01
258 Single-mode 780 nm vertical-cavity surface-emitting lasers with multi-leaf holey structure
2008-01-01
259 Effects of built-in polarization and carrier overflow on InGaN quantum-well lasers with electronic blocking layers
2008-01-01
260 One-shot exposure for patterning two-dimensional photonic crystals to enhance light extraction of InGaN-based green LEDs
2008-01-01
261 Luminance enhancement of flip-chip light-emitting diodes by geometric sapphire shaping structure
2008-01-01
262 Wet mesa etching process in InGaN-based light emitting diodes 2008-01-01
263 Enhancement of light output intensity by integrating ZnO nanorod arrays on GaN-based LLO vertical LEDs 2008-01-01
264 Abnormal PL spectrum in InGaN MQW surface emitting cavity - art. no. 69080L
2008-01-01
265 AlGaN/GaN multiple quantum wells grown by atomic layer deposition - art. no. 68941V
2008-01-01
266 Improvement of GaN-based LED with SiO2 photonic crystal on an ITO film by holographic lithography
2008-01-01
267 Broad Angular and Spectral Anti-Reflection Employing GaN Nano-Pillar Structures 2008-01-01
268 Optical studies of InN epilayers on Si substrates with different buffer layers
2007-12-01
269 Fabrication of InGaN/GaN nanorod light-emitting diodes with self-assembled Ni metal islands
2007-11-07
270 Characteristics of broad-area InGaAs submonolayer quantum-dot vertical-cavity surface-emitting lasers
2007-10-01
271 GaN-based high-Q vertical-cavity light-emitting diodes
2007-10-01
272 Anisotropy of light extraction from two-dimensional photonic crystal light-emitting diodes
2007-09-17
273 High-power single-mode submonolayer quantum-dot photonic crystal vertical-cavity surface-emitting lasers
2007-09-01
274 Optical properties of In0.3Ga0.7N/GaN green emission nanorods fabricated by plasma etching
2007-08-22
275 Lasing characteristics of a GaN photonic crystal nanocavity light source
2007-07-23
276 Dislocation reduction in GaN grown on stripe patterned r-plane sapphire substrates 2007-07-09
277 Improvement of efficiency and ESD characteristics of ultraviolet light-emitting diodes by inserting AlGaN and SiN buffer layers
2007-07-01
278 Fabrication and characteristics of thin-film InGaN-GaN light-emitting diodes with TiO2/SiO2 omnidirectional reflectors
2007-07-01
279 Enhancement of flip-chip light-emitting diodes with omni-directional reflector and textured micropillar arrays
2007-07-01
280 Fabrication of microcavity light-emitting diodes using highly reflective AlN-GaN and Ta2O5-SiO2 distributed Bragg mirrors
2007-07-01
281 Reliable architecture for high-capacity fiber-radio systems
2007-07-01
282 Highly strained InGaAs/GaAs quantum well vertical-cavity surface-emitting lasers
2007-06-01
283 High brightness GaN-based light-emitting diodes
2007-06-01
284 Beam profile characteristics of InGaAs sub-monolayer quantum-dot photonic-crystal VCSELs
2007-06-01
285 Characteristics of P-substrate small-aperture holey light-emitting diodes for fiber-optic applications
2007-05-01
286 Light-output enhancement of nano-roughened GaN laser lift-off light-emitting diodes formed by ICP dry etching
2007-05-01
287 Optical characteristics of a-plane InGaN/GaN multiple quantum wells with different well widths
2007-04-30
288 Low refractive index Si nanopillars on Si substrate
2007-04-30
289 Dichromatic InGaN-based white light emitting diodes by using laser lift-off and wafer-bonding schemes
2007-04-16
290 Optical properties of InGaN quantum dots grown by SiN(x) nanomasks
2007-04-15
291 Anomalous microphotoluminescence of high-aspect-ratio Si nanopillars formatted by dry-etching Si substrate with self-aggregated Ni nanodot mask
2007-04-02
292 Characteristics of cross-shaped polarization-switching vertical-cavity surface-emitting lasers for dual-channel communications
2007-04-01
293 Nano-roughening n-side surface of AlGaInP-based LEDs for increasing extraction efficiency
2007-03-25
294 Study on optimal growth conditions of a-plane GaN grown on r-plane sapphire by metal-organic chemical vapor deposition
2007-03-15
295 High-performance GaN-based vertical-injection light-emitting diodes with TiO2-SiO2 omnidirectional reflector and n-GaN roughness
2007-03-01
296 Enhanced photoresponse of a metal-oxide-semiconductor photodetector with silicon nanocrystals embedded in the oxide layer
2007-01-29
297 Investigation of InGaN/GaN light emitting diodes with nano-roughened surface by excimer laser etching method
2007-01-25
298 Effect of growth conditions on the Al composition and quality of AlGaN film
2007-01-15
299 Recent progress on GaN-based vertical cavity surface emitting lasers - art. no. 67660G
2007-01-01
300 Observations on surface morphologies and dislocations of a-plane GaN grown by metal organic chemical vapor deposition
2007-01-01
301 Reflectance study of nano-scaled textured surfaces 2007-01-01
302 InGaN/GaN nanostripe grown on pattern sapphire by metal organic chemical vapor deposition
2007-01-01
303 Enhancement of InGaN/GaN flip-chip ITO LEDs with incline sidewalls coated with TiO2/SiO2 omnidirectional reflector
2007-01-01
304 Efficiency enhancement of GaN-based power-chip LEDs with sidewall roughness by natural lithography 2007-01-01
305 Fabrication and characterization of InGaN-based green resonant-cavity LEDs using hydrogen ion-implantation techniques
2007-01-01
306 Tunable slow light device using quantum dot semiconductor laser
2006-12-25
307 Trenched epitaxial lateral overgrowth of fast coalesced a-plane GaN with low dislocation density
2006-12-18
308 Effect of oxygen on characteristics of nickel oxide/indium tin oxide heterojunction diodes
2006-12-15
309 Characteristics of single-mode InGaAs submonolayer quantum-dot photonic-crystal vertical-cavity surface-emitting lasers
2006-12-01
310 Light extraction enhancement of InGaN-based green LEDs with a composite omnidirectional reflector
2006-12-01
311 High light-extraction GaN-based vertical LEDs with double diffuse surfaces
2006-11-01
312 Phosphor-free GaN-based transverse junction light emitting diodes for the generation of white light
2006-11-01
313 Improvement of InGaN/GaN light emitting diode performance with a nano-roughened p-GaN surface by excimer laser-irradiation
2006-10-10
314 The carrier blocking effect on 850 nm InAlGaAs/AlGaAs vertical-cavity surface-emitting lasers
2006-10-01
315 ZnO nanopowders fabricated by dc thermal plasma synthesis
2006-09-25
316 Emission characteristics of optically pumped GaN-based vertical-cavity surface-emitting lasers
2006-09-18
317 High-power single-mode vertical-cavity surface-emitting lasers with multi-leaf holey structure
2006-09-01
318 Enhancement of InGaN-GaN indium-tin-oxide flip-chip light-emitting diodes with TiO2-SiO2 multilayer stack omnidirectional reflector
2006-09-01
319 Tunable optical group delay in quantum dot vertical-cavity surface-emitting laser at 10 GHz
2006-08-31
320 Rapid self-assembly of Ni nanodots on Si substrate covered by a less-adhesive and heat-accumulated SiO2 layers
2006-08-14
321 Single-mode InGaAs submonolayer quantum dot photonic crystal VCSELs
2006-08-01
322 Fabrication and photoluminescence of InGaN-based nanorods fabricated by plasma etching with nanoscale nickel metal islands
2006-07-01
323 Design and fabrication of temperature-insensitive InGaP-InGaAlP resonant-cavity light-emitting diodes
2006-07-01
324 Nitride-based LEDs with nano-scale textured sidewalls using natural lithography
2006-06-28
325 Optically heterodyne diagnosis of a high-saturation-power undoped InP sandwiched InGaAs p-i-n photodiode grown on GaAs
2006-06-12
326 Aluminum incorporation into AlGaN grown by low-pressure metal organic vapor phase epitaxy
2006-05-15
327 Temperature-dependent optical properties of In0.34Ga0.66As1-xNx/GaAs single quantum well with high nitrogen content for 1.55 mu m application grown by molecular beam epitaxy
2006-05-15
328 Whispering gallery mode of modified octagonal quasiperiodic photonic crystal single-defect microcavity and its side-mode reduction
2006-05-15
329 A novel method to improve VCSELs oxide-confined aperture uniformity using selective As+-implanted underlying layer
2006-05-10
330 Catalyst-free GaN nanorods grown by metalorganic molecular beam epitaxy
2006-05-01
331 OCDMA light source using directly modulated Fabry-Perot laser diode in an external injection scheme
2006-05-01
332 Enhancing the output power of GaN-based LEDs grown on wet-etched patterned sapphire substrates
2006-05-01
333 Experimental and theoretical analysis on ultraviolet 370 nm AlGaInN light-emitting diodes
2006-05-01
334 Dynamic characteristics of long-wavelength quantum dot vertical-cavity surface-emitting lasers with light injection
2006-04-03
335 Room-temperature operation of optically pumped blue-violet GaN-based vertical-cavity surface-emitting lasers fabricated by laser lift-off
2006-04-01
336 InGaN self-assembled quantum dots grown by metal-organic chemical vapour deposition with growth interruption
2006-03-28
337 Enhanced light output in InGaN-based light-emitting diodes with onmidirectional one-dimensional photonic crystals
2006-03-01
338 GaN-based LEDs with Al-deposited V-shaped sapphire facet mirror
2006-03-01
339 Single-mode monolithic quantum-dot VCSEL in 1.3 mu m with sidemode suppression ratio over 30 dB
2006-03-01
340 The lasing characteristics of GaN-based vertical-cavity surface-emitting laser with AlN-GaN and Ta2O5-SiO2 distributed Bragg reflectors
2006-03-01
341 Crack-free GaN/AlN distributed Bragg reflectors incorporated with GaN/AlN superlattices grown by metalorganic chemical vapor deposition
2006-02-06
342 AlGaInP light-emitting diodes with stripe patterned omni-directional reflector
2006-02-01
343 High brightness AlGaInP-based light emitting diodes by adopting the stripe-patterned omni-directional reflector
2006-02-01
344 Photoluminescence of plasma enhanced chemical vapor deposition amorphous silicon oxide with silicon nanocrystals grown at different fluence ratios and substrate temperatures
2006-02-01
345 Effect of annealing on low-threshold-current large-wavelength InGaAs quantum well vertical-cavity laser
2006-02-01
346 Theoretical and experimental analysis on InAlGaAs/AlGaAs active region of 850-nm vertical-cavity surface-emitting lasers
2006-01-01
347 1.3-mu m InAs-InGaAs quantum-dot vertical-cavity surface-emitting laser with fully doped DBRs grown by MBE
2006-01-01
348 Fabrication and characterization of GaN-based LEDs grown on chemical wet-etched patterned sapphire substrates
2006-01-01
349 Growth of highly strained RnGaAs quantum wells by metalorganic chemical vapor deposition with application to vertical-cavity surface-emitting laser
2006-01-01
350 Improvement in light-output efficiency of AlGaInP LEDs fabricated on stripe patterned epitaxy
2005-12-01
351 Effects of different n-electrode patterns on optical characteristics of large-area p-side-down InGaN light-emitting diodes fabricated by laser lift-off
2005-11-01
352 Increasing the extraction efficiency of AlGaInP LEDs via n-side surface roughening
2005-11-01
353 1.3 mu m quantum dot vertical-cavity surface-emitting laser with external light injection
2005-10-27
354 Low-threshold-current-density, long-wavelength, highly strained InGaAs laser grown by metalorganic chemical vapor deposition
2005-10-01
355 Fabrication and characterization of In(0.25)Ga(0.75)N/GaN multiple quantum wells embedded in nanorods 2005-10-01
356 Singlemode InAs quantum dot photonic crystal VCSELs
2005-09-29
357 Improvement in light-output efficiency of near-ultraviolet InGaN-GaN LEDs fabricated on stripe patterned sapphire substrates
2005-09-25
358 Enhanced light output of an InGaN/GaN light emitting diode with a nano-roughened p-GaN surface
2005-09-01
359 Fabrication and performance of blue GaN-based vertical-cavity surface emitting laser employing AlN/GaN and Ta2O5/SiO2 distributed Bragg reflector
2005-08-22
360 Improved photoluminescence of 1.26 mu m InGaAs/GaAs quantum wells assisted by Sb surfactant and indium-graded intermediate layers
2005-08-08
361 Temperature-dependent photoluminescence of highly strained InGaAsN/GaAs quantum wells (lambda=1.28-1.45 mu m) with GaAsP strain-compensated layers
2005-08-01
362 Ultralow leakage In0.53Ga0.47As p-i-n photodetector grown on linearly graded metamorphic InxGa1-xP buffered GaAs substrate
2005-06-01
363 Enhancement in light output of InGaN-based microhole array light-emitting diodes
2005-06-01
364 High speed (> 13 GHz) modulation of 850 nm vertical cavity surface emitting lasers (VCSELs) with tapered oxide confined layer
2005-06-01
365 Improving high-temperature performance in continuous-wave mode InGaAsN/GaAsN ridge waveguide lasers
2005-06-01
366 Improvement of InGaN-GaN light-emitting diode performance with a nano-roughened p-GaN surface
2005-05-01
367 Fabrication of large-area GaN-based light-emitting diodes on Cu substrate
2005-04-01
368 10 Gbps InGaAs : Sb-G-aAs-GaAsP quantum well vertical cavity surface emitting lasers with 1.27 mu m emission wavelengths
2005-04-01
369 Fabrication and micro-photoluminescence investigation of Mg-doped gallium nitride nanorods
2005-04-01
370 Characterization of InGaN/GaN multiple quantum well nanorods fabricated by plasma etching with self-assembled nickel metal nanomasks
2005-04-01
371 Photoluminescence from In0.3Ga0.7N/GaN multiple-quantum-well nanorods
2005-04-01
372 Singlemode (SMSR > 40 dB) proton-implanted photonic crystal vertical-cavity surface-emitting lasers
2005-03-17
373 High-speed modulation of InGaAs : Sb-GaAs-GaAsP quantum-well vertical-cavity surface-emitting lasers with 1.27-mu m emission wavelength
2005-03-01
374 Emission of bright blue light from mesoporous silica with dense Si (Ge) nanocrystals 2005-01-01
375 High temperature stability 850-nm In0.15Al0.08Ga0.77As/Al0.3Ga0.7As vertical-cavity surface-emitting laser with single Al0.75Ga0.25As current blocking layer
2005-01-01
376 Light-output enhancement in a nitride-based light-emitting diode with 22 degrees undercut sidewalls
2005-01-01
377 Single-mode 1.27-mu m InGaAs : Sb-GaAs-GaAsP quantum well vertical cavity surface emitting lasers
2005-01-01
378 Spectrally resolved spontaneous emission patterns of oxide-confined vertical-cavity surface-emitting lasers
2004-12-01
379 Fabrication and characteristics of high-speed oxide-confined VCSELs using InGaAsP-InGaP strain-compensated MQWs
2004-12-01
380 Improvement of kink characteristics performance of GaAsVCSEL with a indium-tin-oxide top transparent overcoating
2004-11-15
381 Simulation of 1300-nm In(0.4)Ga(0.6)As(0.986)N(0.014)/GaAs(1-x)N(x) quantum-well lasers with various GaAs(1-x)N(x) strain compensated barriers 2004-11-01
382 Fabrication of GaN-based nanorod light emitting diodes using self-assemble nickel nano-mask and inductively coupled plasma reactive ion etching
2004-10-25
383 Investigation of GaN LED with Be-implanted Mg-doped GaN layer
2004-10-15
384 Pumping intensity dependent surface charge accumulation and redshifted microphotoluminescence of silicon-implanted quartz
2004-08-09
385 10 Gb/s single-mode vertical-cavity surface-emitting laser with large aperture and oxygen implantation
2004-08-01
386 High-speed (> 10 Gbps) 850 nm oxide-confined vertical cavity surface emitting lasers (VCSELs) with a planar process and reduced parasitic capacitance
2004-07-01
387 As+-implanted AlGaAs oxide-confined VCSEL with enhanced oxidation rate and high performance uniformity
2004-06-01
388 Study of GaN light-emitting diodes fabricated by laser lift-off technique
2004-04-15
389 Effect of rapid thermal annealing on beryllium implanted p-type GaN
2004-03-25
390 Study of dry etching for GaN and InGaN-based laser structure using inductively coupled plasma reactive ion etching
2004-03-25
391 High speed performance of 850 nm silicon-implanted AlGaAs/GaAs vertical cavity emitting lasers
2004-03-01
392 Comparisons of InP/InGaAlAs and InAlAs/InGaAlAs distributed Bragg reflectors grown by metalorganic chemical vapor deposition
2004-02-25
393 MOCVD growth of AlN/GaN DBR structures under various ambient conditions
2004-02-15
394 High-speed characteristics of large-area single-transverse-mode vertical-cavity surface-emitting lasers
2003-10-16
395 Performance of 850 nm AlGaAs/GaAs implanted VCSELs utilizing silicon implantation induced disordering
2003-10-01
396 High-speed modulation of 850 nm InGaAsP/InGaP strain-compensated VCSELs
2003-07-10
397 MULTIPLE-INPUTS SYSTOLIC PRIORITY QUEUE FOR FAST SEQUENTIAL-DECODING OF CONVOLUTIONAL-CODES
1995-10-01
398 A conceptual framework of bank credit granting system-computer applications in Taiwan 1995-01-01
399 SEQUENTIAL-DECODING OF CONVOLUTIONAL-CODES BY A COMPRESSED MULTIPLE QUEUE ALGORITHM
1994-08-01

Books

序號
No.
標題
Title
著作日期
Date
1 國立交通大學光電工程學系郭浩中教師升等送審著作論文集 2007

Others

序號
No.
標題
Title
著作日期
Date
1 Highly Efficient Multiple-Layer CdS Quantum Dot Sensitized III-V Solar Cells 2014-02-01
2 Solid-State Lighting with High Brightness, High Efficiency, and Low Cost 2014-01-01
3 Reduction of Efficiency Droop in Semipolar (1(1)over-bar01) InGaN/GaN Light Emitting Diodes Grown on Patterned Silicon Substrates (vol 4, 012105, 2011)
2011-03-01
4 Introduction to the Issue on Solid-State Lighting
2009-07-01
5 High output power density from GaN-based two-dimensional nanorod light-emitting diode arrays (vol 94, 141111, 2009)
2009-05-25
6 Enhancement of flip-chip light-emitting diodes with omni-directional reflector and textured micropillar arrays (vol 19, pg 18, 2007)
2007-09-01

Patents

序號
No.
標題
Title
著作日期
Date
1 具有空氣介質層之半導體光電元件及空氣介質層之製作方法
2014-11-11
2 奈米級側向成長磊晶之薄膜發光二極體及其製作方法
2014-11-01
3 半導體發光元件
2014-08-11
4 具有漸變含量之電洞穿隧層之發光元件
2014-07-11
5 白光發光二極體封裝結構的製造方法
2014-05-16
6 具有粗螢光粉結構之發光二極體
2014-03-16
7 發光二極體的封裝結構及其封裝方法
2014-02-16
8 能帶邊緣型光子晶體雷射二極體
2013-12-11
9 具有奈米條狀結構之發光元件及其製造方法
2013-11-11
10 具有漸變含量之電洞穿隧層之發光元件
2013-09-16
11 一種具有週期性形狀結構透明導電極之太陽能電池裝置
2013-09-11
12 空気媒質層を有する半導体光学装置の製造方法及び空気媒質層の形成方法(Asemiconductoropticaldevicehavingairmedialayerandthemethodforformingtheairmedialayer) 2013-06-20
13 具有空氣介質層之半導體光電元件及空氣介質層之製作方法
2013-06-16
14 奈米級側向成長磊晶之薄膜發光二極體及其製作方法
2012-11-01
15 柱状ナノ構造体(ナノロッド)を利用し発光ダイオード(LED)の発光効率を引き上げる方法 2012-09-14
16 利用斜向沈積形成之奈米結構薄膜及其方法
2012-09-11
17 半導體發光元件
2012-09-01
18 半导体发光元件及其制作方法 2012-08-29
19 一種具有週期性形狀結構透明導電極之太陽能電池裝置
2012-04-01
20 半導體發光元件及其製作方法
2011-11-21
21 一種利用奈米柱狀結構提升發光二極體光輸出效率之方法
2011-04-11
22 能帶邊緣型光子晶體雷射二極體
2011-03-01
23 SURFACE-EMITTING LASER DEVICE
2011-02-24
24 NANOSTRUCTURED THIN-FILM FORMED BY UTILIZING OBLIQUE-ANGLE DEPOSITION AND METHOD OF THE SAME
2010-10-14
25 Nanostructured thin-film formed by utilizing oblique-angle deposition and method of the same
2010-02-18
26 利用斜向沈積形成之奈米結構薄膜及其方法
2010-02-16
27 具備透明電極及無裂縫氮化鋁/氮化鎵系列反射鏡之可電激發面射型雷射及其製作方法
2009-07-01
28 半导体发光元件及其制作方法 2009-02-18
29 半導體發光元件及其製作方法
2009-02-01
30 LIGHT-EMITTING DEVICE AND METHOD FOR MAKING THE SAME
2009-01-22
31 具有奈米條狀結構之發光元件及其製造方法
2009-01-16
32 柱状ナノ構造体(ナノロッド)を利用し発光ダイオード(LED)の発光効率を引き上げる方法 2008-12-18
33 一種利用奈米柱狀結構提升發光二極體光輸出效率之方法
2008-12-16
34 Method for promoting light emission efficiency of LED using nanorods structure
2008-12-11
35 III族氮化物系布拉格反射鏡之製造方法及布拉格反射鏡
2008-08-11
36 Ⅲ族氮化物系反射鏡之製法
2007-06-16
37 Process of producing group III nitride based reflectors
2007-06-07

Plan

序號
No.
標題
Title
著作日期
Date
1 高效率(大於200lm/W)發光二極體關鍵材料與零組件之開發( I ) 2014
2 新穎高效率混合型之奈米粒子光電元件-總計畫暨子計畫一:新穎高效率混合型之奈米粒子光電元件 2014
3 高效率(大於200 lm/W)發光二極體光源模組開發 2013
4 新穎高效率混合型之奈米粒子光電元件-總計畫暨子計畫一:新穎高效率混合型之奈米粒子光電元件 2013
5 具晶圓級封裝技術之高內部量子效率與低效率下降率之氮化鎵發光二極體開發計畫( II ) 2012
6 半極性與非極性氮化鎵之寬能隙材料及光電元件研究-子計畫一:半極性與非極性氮化鎵半導體材料元件磊晶成長 2012
7 半極性與非極性氮化鎵之寬能隙材料及光電元件研究-總計畫:半極性與非極性氮化鎵之寬能隙材料及光電元件研究 2012
8 V和W 頻段無線與超寬頻訊號光纖通訊之關鍵元件及技術之研究-子計畫五:以氮化鎵材料及元件應用於次兆赫與兆赫微波光纖通訊 2011
9 半極性與非極性氮化鎵之寬能隙材料及光電元件研究-子計畫一:半極性與非極性氮化鎵半導體材料元件磊晶成長 2011
10 具晶圓級封裝技術之高內部量子效率與低效率下降率之氮化鎵發光二極體開發計畫( I ) 2011
11 半極性與非極性氮化鎵之寬能隙材料及光電元件研究-總計畫:半極性與非極性氮化鎵之寬能隙材料及光電元件研究 2011
12 半極性與非極性氮化鎵之寬能隙材料及光電元件研究---總計畫 2010
13 V和W 頻段無線與超寬頻訊號光纖通訊之關鍵元件及技術之研究---子計畫五:以氮化鎵材料及元件應用於次兆赫與兆赫微波光纖通訊 2010
14 赴歐洲考察光電科技發展參訪計畫 2010
15 半極性與非極性氮化鎵之寬能隙材料及光電元件研究---子計畫一:半極性與非極性氮化鎵半導體材料元件磊晶成長 2010
16 具晶圓級封裝技術之高內部量子效率與低效率下降率之氮化鎵發光二極體開發計畫 2009
17 未來光通訊系統所需之新穎光電元件與技術之研究---子計畫三:新穎式高速量子點面射型雷射於量子光通訊系統之製程及研究 2009
18 V和W 頻段無線與超寬頻訊號光纖通訊之關鍵元件及技術之研究---子計畫五:以氮化鎵材料及元件應用於次兆赫與兆赫微波光纖通訊 2009
19 未來光通訊系統所需之新穎光電元件與技術之研究---子計畫三:新穎式高速量子點面射型雷射於量子光通訊系統之製程及研究 2008
20 以注入鎖定波長光子晶體量子點面射型雷射二極體為基礎之分波多工被動光纖網路系統 2008
21 以注入鎖定波長光子晶體量子點面射型雷射二極體為基礎之分波多工被動光纖網路系統 2007
22 未來光通訊系統所需之新穎光電元件與技術之研究---子計畫三:新穎式高速量子點面射型雷射於量子光通訊系統之製程及研究 2007
23 新穎光信號處理元件與模組在光通信中之應用---子計畫四:高速長波長(1.3,1.55μm)VCSELs在都會DWDM之研究與實現(III) 2006
24 高效率低成本III-V族半導體太陽能電池關鍵技術開發計畫 2006
25 以注入鎖定波長光子晶體量子點面射型雷射二極體為基礎之分波多工被動光纖網路系統 2006
26 新穎光信號處理元件與模組在光通信中之應用---子計畫四:高速長波長(1.3,1.55.mu.m)VCSELs在都會DWDM之研究與實現(II)
2005
27 新穎光信號處理元件與模組在光通信中之應用---子計畫四:高速長波長(1.3,1.55.mu.m)VCSELs在都會DWDM之研究與實現(I)
2004
28 III-Nitride量子點及奈米結構成長及光學特性之研究
2003

Proceedings Paper

序號
No.
標題
Title
著作日期
Date
1 Enhancement of angular CCT by hybrid phosphor structure in White Light-emitting Diodes 2013-01-01
2 Simulation of Grading Double Hetero-junction non-polar InGaN Solar cell 2013-01-01
3 Enhance current density and light trapping effect in a-Si thin film solar cells by flexible textured PDMS film 2013-01-01
4 Fano resonances GaN-based high contrast grating surface-emitting lasers
2013-01-01
5 Improve GaAs Solar Cells Efficiency by Using High-transmittance Textured PDMS Film
2013-01-01
6 Efficiency enhancement of InGaN/GaN multiple quantum well solar cells using CdS quantum dots and distributed Bragg reflectors
2013-01-01
7 High-quality Quantum-Dot-Based Full-Color Display Technology by Pulsed Spray Method
2013-01-01
8 Photoluminescent Study of High Indium Content Nanopyramid Light Emitting Diodes 2013-01-01
9 The effect of pulsewidth on preparing CuIn1-xGaxSe2 thin film via pulse laser deposition 2013-01-01
10 Numerical Study of In0.15Ga0.85N/GaN MQW Solar Cells with varying well band structure 2013-01-01
11 Embedded InN Dot-Like Structure within InGaN Layers Using Gradient-Indium Content in Nitride-Based Solar Cell 2013-01-01
12 Spectrally Dependent Performance of Hybrid Colloidal Quantum Dots GaAs Solar Cells 2013-01-01
13 A Wearable Bio-potential Monitor System with Capacitive Coupling Electrode 2013-01-01
14 Electrically driven nanoarrow array green LED
2012-01-01
15 Low efficiency droop of InGaN/GaN blue LEDs with super-lattice active structure
2012-01-01
16 Recent advances on CW current injection blue VCSELs
2012-01-01
17 Lasing action in gallium nitride photonic quasicrystal nanorod arrays
2012-01-01
18 Reduction of efficiency droop in InGaN-Based UV Light-Emitting Diodes with InAlGaN Barrier
2012-01-01
19 Investigation of emission polarization and strain in InGaN/GaN multiple quantum wells on nanorod epitaxially lateral overgrowth templates
2012-01-01
20 Self-Pulsation in Two-Section Laser with an air gap
2012-01-01
21 Improved efficiency for nanopillar array of c-Si photovoltaic by down-conversion and anti-reflection of quantum dots
2012-01-01
22 Characterization of large area Cu(In,Ga)Se-2 nanotip arrays via photoluminescence 2012-01-01
23 A HIGHLY EFFICIENT HYBRID CDS-GAAS SOLAR CELL 2012-01-01
24 MOCVD growth of GaN nanopyramid and nanopillar LED with emission in green to orange color
2012-01-01
25 Improvement of Angular-dependent CCT Uniformity by ZrO2 Nano-particles in Remote Phosphor White LEDs 2012-01-01
26 A Full-Color, White Light Emission of Quantum-Dot-Based Display Technology Using Pulsed Spray Method with Distributed Bragg Reflector 2012-01-01
27 Ultrafast Pump-probe Spectroscopy of Carrier Relaxation Dynamics in Cu(In,Ga)Se-2 Thin Films 2012-01-01
28 Characteristics of an Electrically Pumped GaN-based Microcavity Light Emitter with an AlN Current Blocking Layer 2012-01-01
29 Design of Highly Absorption Structure by Flatted ITO Patterned Substrate for Thin Film a-Si Solar Cells 2012-01-01
30 Tunable Microwave Generation by Photonic Integrated Distributed Feedback Lasers 2012-01-01
31 Highly Efficient GaAs Solar Cells with Dual Layer of Quantum Dots And A Flexible PDMS Film 2012-01-01
32 Efficiency and droop improvement in InGaN/GaN light-emitting diodes by selectively carrier-distribution manipulation 2012-01-01
33 Simulation of Grading Double Hetero-junction non-polar InGaN Solar cell 2012-01-01
34 High Performance of Double-layer Quantum Dots with PDMS Film for Novel GaAs Solar Cells 2012-01-01
35 High Uniformity of Remote Phosphor Structure by ZrO2 Nano-particles for White LEDs 2012-01-01
36 "S-shaped" Photoluminescence Emission Shift in Cu(In,Ga)Se-2 Thin Films 2012-01-01
37 Improvement in efficiency droop of GaN-based light-emitting diodes by optimization of active regions 2012-01-01
38 Highly efficient CdS-quantum-dot-sensitized InGaN multiple quantum well solar cells 2012-01-01
39 Efficiency Enhancement InGaP/GaAs Dual-Junction Solar Cell with Subwavelength Antireflection Nanorod Arrays 2011-12-01
40 Optical properties of (1 (1)over-bar 0 1) semi-polar InGaN/GaN multiple quantum wells grown on patterned silicon substrates
2011-03-01
41 Material characteristics of InGaN based light emitting diodes grown on porous Si substrates
2011-01-15
42 Study of the internal quantum efficiency of InGaN/GaN UV LEDs on patterned sapphire substrate using the electroluminescence method
2011-01-15
43 Efficiency droop improvement in GaN-based light-emitting diodes by graded-composition electron blocking layer
2011-01-01
44 Fabrication and lasing characteristics of GaN nanopillars
2011-01-01
45 Growth of semi-polar GaN-based light-emitting diodes grown on an patterned Si substrate
2011-01-01
46 Stable and near-omni-directional high-efficiency amorphous Si photovoltaic devices 2011-01-01
47 Abnormal polarization switching phenomenon in a-plane Al(x)Ga(1-x)N 2011-01-01
48 Characteristics of GaN-based Vertical Cavity Surface Emitting Lasers with Hybrid Mirrors 2011-01-01
49 Efficiency Droop Reduction in InGaN/GaN Light-emitting Diodes by Graded-thickness Multiple Quantum Wells 2011-01-01
50 Highly Efficient InGaN-Based Light Emitting Devices grown on Nanoscale Patterned Substrates by MOCVD
2011-01-01
51 InGaAs submonolayer quantum-dot photonic-crystal LEDs for fiber-optic communications
2010-05-01
52 Influence of LT-GaN nucleation layer on the structural and optical properties of MOVPE-grown a-plane GaN
2010-04-01
53 Crystal quality improvement of a-plane GaN using epitaxial lateral overgrowth on nanorods
2010-04-01
54 Strain-reduced GaN thick-film grown by hydride vapor phase epitaxy utilizing dot air-bridged structure
2009-05-01
55 HRTEM investigation of high-reflectance AlN/GaN distributed Bragg-reflectors by inserting AlN/GaN superlattice
2009-05-01
56 Performance Enhancement of a-Plane Light-Emitting Diodes Using InGaN/GaN Superlattices
2009-04-01
57 Effects of Inhomogeneous Gain and Loss on Nitride-Based Vertical-Cavity Surface Emitting Lasers
2009-04-01
58 Power Enhancement of GaN-Based Flip-Chip Light-Emitting Diodes with Triple Roughened Surfaces
2009-04-01
59 Large Vacuum Rabi Splitting in ZnO-Based Microcavities 2009-01-01
60 Polarization Switching in 1.3-mu m Quantum Dot Vertical Cavity Surface Emitting Lasers 2009-01-01
61 Efficiency Enhancement of GaN/InGaN Vertical-Injection Light Emitting Diodes Using Distinctive Indium-Tin-Oxide Nanorods 2009-01-01
62 Recent Progress in Electrically Pumped Blue GaN-Based VCSELs 2009-01-01
63 Beam Shaping of GaN/InGaN Vertical-Injection Light Emitting Diodes via High-Aspect-Ratio Nanorod Arrays 2009-01-01
64 GaN-based film-transferred light-emitting diodes with photonic crystal 2009-01-01
65 Electron-beam Evaporation of Distinctive Indium-tin-oxide Nanorods for Enhanced Light Extraction from InGaN/GaN Light Emitting Diodes 2009-01-01
66 High-reflectivity ultraviolet AlN/AlGaN distributed Bragg reflectors grown by metalorganic chemical vapor deposition
2008-11-15
67 Characteristics of a-plane GaN with the SiN(x) insertion layer grown by metal-organic chemical vapor deposition 2008-11-15
68 Efficiency enhancement of UV/blue light emitting diodes via nanoscaled epitaxial lateral overgrowth of GaN on a SiO(2) nanorod-array patterned sapphire substrate 2008-11-15
69 Lasing Behavior, Gain Property, and Strong Coupling Effects in GaN-Based Vertical-Cavity Surface-Emitting Lasers
2008-08-01
70 Investigation on microstructure in GaN epitaxial growth on the stripe-patterned r-plane sapphire substrates
2008-04-01
71 Tunable light emissions from thermally evaporated In2O3 nanostructures grown at different growth temperatures
2008-04-01
72 Characteristics of ultraviolet nonpolar InGaN/GaN light-emitting diodes using trench epitaxial lateral overgrowth technology
2008-04-01
73 A simple model for cavity enhanced slow lights in vertical cavity surface emission lasers
2008-04-01
74 Metal organic chemical vapor deposition growth of GaN-based light emitting diodes with naturally formed nano pyramids
2008-04-01
75 Thermally evaporated In2O3 nanoloquats with oxygen flow-dependent optical emissions
2008-02-15
76 Fabricated nano-disk InGaN/GaN multi-quantum well of the inverse hexagonal pyramids
2008-02-01
77 AlGaN/GaN multiple quantum wells grown by using atomic layer deposition technique 2008-01-01
78 HIGH EFFICIENCY GALLIUM ARSENIDE SOLAR CELLS USING INDIUM-TIN-OXIDE NANO-COLUMNS 2008-01-01
79 Anisotropy light extraction with high polarization ratio from photonic crystal fight-emitting diodes 2008-01-01
80 AlGaN/GaN Multiple Quantum Wells Grown By Atomic Layer Deposition 2008-01-01
81 Micro-Photoluminescence from a Single InGaN-based Nano-Pillar Fabricated by Focused Ion Beam Milling 2008-01-01
82 High Efficiency White LEDs with 2D Photonic Quasi-Crystal and Patterned Sapphire Substrate 2008-01-01
83 Composition Dependence of Infrared Optical Phonon Modes in AlGaN Epilayers Grown on Sapphire Substrates 2008-01-01
84 CW Lasing of Current Injection Blue GaN-Based Vertical Cavity Surface Emitting Lasers 2008-01-01
85 Infrared reflectance of optical phonon modes in AlGaN epitaxial layers grown on sapphire substrates - art. no. 68941U
2008-01-01
86 Azimuthal anisotropy of light extraction from photonic crystal light-emitting diodes
2008-01-01
87 Internal quantum efficiency behavior of a-plane and c-plane InGaN/GaN multiple quantum well with different indium compositions
2008-01-01
88 Optically pumped GaN-based vertical cavity surface emitting lasers: Technology and characteristics
2007-08-01
89 Synthesis of In2O3 nanocrystal chains and annealing effect on their optical properties
2007-07-01
90 Hybrid nitride microcavity using crack-free highly reflective AlN/GaN and Ta2O5/SiO2 distributed Bragg mirrors
2007-06-01
91 GaN alternating current light-emitting device
2007-06-01
92 Strong ultraviolet emission from InGaN/AlGaN multiple quantum well grown by multi-step process
2007-04-01
93 High-performance 650 nm resonant-cavity light-emitting diodes for plastic optical-fiber application
2007-04-01
94 GaN/AlGaN active regions for terahertz quantum cascade lasers grown by low-pressure metal organic vapor deposition
2007-01-01
95 Material and optical properties of trenched epitaxial lateral overgrowth of a-plane GaN
2007-01-01
96 LED light lit for field-sequential-color backlight system 2007-01-01
97 Ultraviolet Lasing Characteristics of a GaN Photonic Crystal Defect Emitter 2007-01-01
98 The Fabrication of Laser Array by Holographic Interference Lithography 2007-01-01
99 Emission Characteristics of InGaN/GaN Vertical-Cavity Surface-Emitting Lasers 2007-01-01
100 High Light-Extraction GaN-based Vertical LEDs With Double Diffuse Surfaces 2007-01-01
101 The Characteristics of a High-Q GaN Micro-cavity Light Emitting Diodes 2007-01-01
102 Characteristics of ultraviolet nonpolar InGaN/GaN light-emitting diodes using trench epitaxial lateral overgrowth technology 2007-01-01
103 Theoretical and experimental analysis of temperature-insensitive 655-nm resonant-cavity LEDs 2007-01-01
104 Optically and electrically pumped GaN-based VCSELs 2007-01-01
105 Optical properties of high density InGaN QDs grown by MOCVD
2006-07-01
106 Effect of nitrogen contents on the temperature dependence of photoluminescence in InGaAsN/GaAs single quantum wells
2006-07-01
107 Observation of strong red photoluminescence with broadband in indium oxynitride nanoparticles
2006-07-01
108 Fabrication of magnesium-doped gallium nitride nanorods and microphotoluminescence characteristics
2006-05-01
109 Enhanced light output in InGaN/GaN light emitting diodes with excimer laser etching surfaces
2006-04-01
110 Ultraviolet lasing of sol-gel-derived zinc oxide polycrystalline films
2006-04-01
111 Fabrication and characteristics of GaN-based microcavity light-emitting diodes with high reflectivity AIN/GaN distributed Bragg reflectors
2006-04-01
112 Study of InGaN multiple quantum dots by metal organic chemical vapor deposition
2006-04-01
113 MOCVD growth of highly strained 1.3 mu m InGaAs : Sb/GaAs vertical cavity surface emitting laser
2006-01-25
114 Quaternary AlInGaN multiple quantum well 368 nm light-emitting diode
2006-01-25
115 Effects of doping concentration and annealing temperature on properties of highly-oriented al-doped ZnO films
2006-01-18
116 Effects of growth interruption time on InGaN/GaN quantum dots grown by metal organic chemical vapor deposition - art. no. 612102
2006-01-01
117 Self-assembled Ni nanodot on SiO(2) film-a novel reactive ion etching mask for Si nanopillar formation on Si substrate 2006-01-01
118 Undoped InP sandwiched InGaAs p-i-n photodetector with partially p-doped photoabsorption layer grown on linearly graded metamorphic InxGa1-xP buffered GaAs substrate - art. no. 61190L
2006-01-01
119 Effects of N2O fluence on the PECVD-grown Si-rich SiOx with buried Si nanocrystals 2005-01-01
120 CO2 laser annealing synthesis of silicon nanocrystals buried in Si-rich SiO2 2005-01-01
121 Effect of different n-electrode patterns on optical characteristics of large-area p-side down InGaN light-emitting diodes fabricated by laser lift-off
2005-01-01
122 10Gbps operation of a metamorphic InGaP buffered In0.53Ga0.47As p-i-n photodetector grown on GaAs substrate - art. no. 602023
2005-01-01
123 Improved near-infrared luminescence of si-rich SiO2 with buried Si nanocrystals grown by PECVD at optimized N2O fluence
2005-01-01
124 Fabrication of high speed and reliable 850nm oxide-confined VCSELs for 10Gb/s data communication
2005-01-01
125 Low-leakage In(0.53)Ga(0.47)As p-i-n photodetector fabricated on GaAs substrate with linearly graded metamorphic In(x)Ga(1-x)P buffer
2005-01-01
126 Silicon defect and nanocrystal related white and red electroluminescence of Si-rich SiO2 based metal-oxide-semiconductor diode
2005-01-01
127 Singlemode monolithically quantum-dot vertical-cavity surface-emitting laser in 1.3 mu m with side-mode suppression ratio > 30dB 2005-01-01
128 Optically pumped GaN-based vertical cavity surface emitting laser at room temperature 2005-01-01
129 An optically pumped blue GaN-based vertical-cavity surface emitting laser employing AIN/GaN and Ta2O5/NO2 distributed bragg reflectors 2005-01-01
130 Enhancement of light-output of GaN-based light-emitting diodes by bias-assisted photoelectrochemical oxidation of p-GaN in H2O 2005-01-01
131 Improvement in light-output efficiency of near-ultraviolet InGaN-GaN LEDs fabricated on stripe patterned sapphire substrate 2005-01-01
132 Single mode output (SMSR > 40 dB) utilizing photonic crystal on proton-implanted vertical-cavity surface-emitting lasers 2005-01-01
133 MOCVD growth of highly strained InGaAs : Sb-GaAs-GaAsP quantum well vertical cavity surface-emitting lasers with 1.27 mu m emission
2004-12-10
134 Improvement of high-speed oxide-confined vertical-cavity surface-emitting lasers
2004-04-01
135 MOCVD growth of high-performance InGaAsP/InGaP strain-compensated VCSELs with 850 nm emission wavelength
2004-01-19
136 Characteristics of stable emission GaN-based resonant-cavity light-emitting diodes
2004-01-19
137 Correlation between surface charge accumulation and excitation intensity dependent red-shifted micro-photoluminescence of Si-implanted quartz with embedded Si nanocrystals 2004-01-01
138 Improvement of kink characteristic of proton implanted VCSEL with ITO overcoating
2004-01-01
139 Improvement of high speed performance for 10-Gb/s 850-nm VCSELs using InGaAsP/InGaP strain-compensated MQWs
2004-01-01
140 Large emitting area GaN based light emitting diode fabricated on conducting copper substrates 2004-01-01
141 InGaN-based light-emitting diode with undercut side wall 2004-01-01
142 Fabrication of InGaN multi-quantum-well nanorod by Ni nano-mask 2004-01-01
143 Simulation and analysis of 1300-nm In0.4Ga0.6As0.986N0.014/GaAs1-xNx quantum-well lasers with various GaAs1-xNx strain compensated barriers
2004-01-01
144 High performance 1.27 mu m InGaAs : Sb-GaAsP quantum wells vertical cavity surface emitting laser 2004-01-01
145 Fabrication of p-side down GaN vertical ligbt emitting diodes on copper substrates by laser lift-off 2004-01-01
146 REDUCED COMPLEXITY SEQUENTIAL-DECODING SCHEME FOR THE MULTIPLE TRELLIS-CODED MODULATION (MTCM) 1994-01-01

Thesis

序號
No.
標題
Title
著作日期
Date
1 PM2.5水溶性無機鹽微粒與前驅氣體之PPWD-PILS的驗證與應用 2014
2 三五族晶片與圖形化矽基板的直接鍵合 2014
3 奈米結構銅銦鎵硒太陽能電池之研究 2014
4 鋰電池高容量複合正極材料最佳製程研究 2013
5 利用內嵌布拉格反射鏡之兩段式分佈回饋型雷射產生可調變之微波訊號 2013
6 垂直式LED元件光電特性之研究 2013
7 探討與改善氮化銦鎵/氮化鎵太陽能電池效率之研究 2013
8 在蜂巢網路的機器通訊網路下之能量效益群組傳輸 2013
9 次世代新穎氮化銦鎵/氮化鎵半極性奈米金字塔發光二極體之磊晶成長與元件特性之研究 2013
10 模擬氮化銦鎵太陽能電池在非極性面藍寶石基版上生長 2013
11 利用奈米陣列結構提高HIT太陽能電池電流密度 2013
12 用於評估早產兒經口餵食狀態之無線多參數監測系統設計 2013
13 探討平頭式氮化銦鎵與氮化鎵多重量子井包覆奈米柱核殼結構綠光發光二極體之成長與光電特性 2013
14 顯示器之LED 背光組合功耗及效率之研究 2013
15 利用下轉換機制提升太陽能電池效率 2013
16 利用可撓式螢光粉膜片與混合式螢光粉結構製作高效率白光發光二極體 2013
17 利用能帶結構設計改善氮化銦鎵綠光發光二極體之外部量子效率和高電流效率下降現象 2013
18 室溫下金屬鍍膜氮化鎵之手性結構之雷射特性 2013
19 探討與改進氮化鎵發光二極體中的效率下降現象 2012
20 高效率敏化之太陽能光電元件 2012
21 室溫下金屬塗層氮化鎵之光柵結構之雷射特性
2012
22 利用氧化鋯奈米粒子增進白光發光二極體之色均勻度及發光效率 2012
23 利用布拉格反射鏡製作之高發光效率與高光品質之前瞻量子點發光照明元件 2012
24 Improvement of Crystalline Quality and Light Extraction Efficiency in GaN-based Light Emitting Diodes by Nanoimprint Lithography 2012
25 利用三維空氣空缺增強氮化銦鎵多重量子井太陽能電池之光吸收 2012
26 利用改善載子分佈行為降低氮化銦鎵發光二極體 效率下降特性之研究 2012
27 利用改善電洞傳導行為降低氮化銦鎵發光二極體效率下降特性之研究 2011
28 高壓發光二極體光電特性以及暖白光效率改善之研究 2011
29 RGB LED光源應用於直下背光模組之研究
2011
30 氮化鎵微共振腔發光元件研究 2011
31 次波長抗反射結構於光伏元件之應用 2011
32 高效率交流發光二極體於SPICE之模擬分析 2011
33 利用有機金屬化學氣相沉積法在奈米圖型化基板上成長及製作高效率氮化銦鎵系列發光二極體元件 2011
34 具有不同氧化銦錫結構之寬能隙氮化鎵太陽能電池研究 2011
35 矽基堆疊型薄膜太陽能電池 2011
36 LCD 動態背光控制及色彩補償之系統設計 2011
37 設計ITO/TiO2光子晶體基板達成非晶矽太陽電池的吸收提升
2011
38 圖案化藍寶石基板氮化鎵系發光二極體之電雜訊量測及分析研究 2011
39 內縮型式框筒結構力學參數分析研究
2011
40 氮化銦鎵發光二極體成長於氮化鎵及藍寶石基板之特性研究與比較 2011
41 利用新穎材料提升氮化鎵太陽能電池的效率
2011
42 利用奈米粒子及雙層結構製作高發光效率與高品質之分離式螢光粉之白光發光二極體 2011
43 利用分離式螢光粉與沿晶塗佈螢光粉製作之白光發光二極體之光學特性探討 2011
44 覆晶式發光二極體光萃取效率提升之研究 2011
45 以氫化物氣相磊晶系統使用氮化鎵奈米柱模板製作獨立式氮化鎵基板應用於發光二極體之研究 2010
46 利用弱共振腔費比布洛雷射二極體於被動式分波多工光纖網路之研究
2010
47 非極性氮化銦鎵/氮化鎵發光二極體的效率改善和特性研究 2010
48 氮化鎵交流電發光二極體元件之研究 2010
49 寬能隙材料半導體微共振腔之研究
2010
50 具氮化鎵與氮化鋁布拉格反射鏡之氮化鎵面射型雷射之研究
2010
51 成長與製作高效率氮化鎵系列發光元件
2010
52 具氮化鎵與氮化鋁鎵布拉格反射鏡之紫外光波段氮化鎵雷射之特性研究
2010
53 寬截止帶交錯耦合步階阻抗諧振器濾波器 2010
54 高亮度LED光電熱特性量測與分析
2010
55 具有局部缺陷氮化鎵二維光子晶體面射型雷射光學特性之研究
2010
56 使用APSYS分析及優化薄膜非晶矽太陽能電池 2010
57 射頻橫向擴散金氧半場效電晶體之基體電壓及熱載子效應研究
2010
58 氮化銦鎵發光二極體成長於圖案化矽基板之結構與光電特性研究 2010
59 利用埋入式次波長奈米結構提升非晶矽太陽能電池光捕捉效率
2010
60 利用自發脈衝光引起光注入鎖模之二段式邊射型雷射高頻特性研究
2010
61 奈米圖形化玻璃基板應用於非晶矽薄膜太陽能電池
2010
62 改善電洞傳導行為緩解Ⅲ族氮化物發光二極體效率下降特性之研究
2010
63 室溫下於金屬鍍膜之氮化鎵奈米共振腔之雷射特性
2010
64 半極化面{10-11}氮化銦鎵/氮化鎵奈米金字塔發光二極體之製作及特性研究
2010
65 次世代高效率氮化鎵發光二極體之奈米製程與元件特性之研究
2009
66 光子晶體於氮化鎵發光二極體元件之研究 2009
67 對-甲苯對於以硫酸還原菌降解菲之影響
2009
68 藍光發光二極體不同量子井厚度的內部量子效率之研究
2009
69 非極性氮化鎵量子井結構與發光二極體元件特性研究
2009
70 高功率LED的散熱方式與溫度量測分析
2009
71 應用仿生抗反射結構於高效率三五族多接面太陽能電池
2009
72 氧化鋅微共振腔結構下之激子-極激子雷射之光學特性 2009
73 利用高密度電漿於低溫製作非晶矽/微晶矽薄膜太陽能電池 2009
74 非極性"a"面氮化銦鎵多重量子井成長在奈米圖樣基板之光學特性研究
2009
75 氮化鎵二維面射型光子晶體雷射閾值增益之研究
2009
76 以非晶矽鍺碳發展之薄膜堆疊型太陽能電池 2009
77 氮化鎵奈米柱製程與雷射特性之研究
2009
78 利用奈米圖型化基板製作高效率氮化鎵發光二極體
2009
79 利用主動層優化降低氮化鎵發光二極體效率下降特性之研究
2009
80 氮化鎵垂直共振腔面射型雷射之電流侷限研究
2009
81 氮化鎵發光二極體成長於奈米柱模板之特性研究
2009
82 覆晶技術及磊晶膜轉移技術應用於氮化鎵發光二極體發光效率提升之研究
2009
83 晶片黏貼技術應用於三/五族化合物半導體元件效率提升之研究
2009
84 熱製程對氮化銦鎵薄膜及量子井發光二極體光學特性之研究
2008
85 高功率單模態面射型雷射技術之研究
2008
86 原子層沉積法成長之氮化鎵/鋁氮化鎵量子井結構之光學與物理特性研究 2008
87 智能型DMA的DSP架構設計在雙核心上的應用
2008
88 里德所羅門碼之改良式信念傳遞解碼演算法
2008
89 不同氧化銦錫結構應用於氮化鎵垂直共振腔面射型雷射之研究
2008
90 運用在分解定義域之淺水方程模型的切比雪夫排列法
2008
91 奈米矽基高效率薄膜太陽能電池 2008
92 利用非等向性蝕刻氮化鎵與藍寶石基板介面製作高效率紫外光發光二極體
2008
93 氮化鎵面射型雷射與極激子在多模氮化鎵微共振腔內色散的光學特性研究
2008
94 氮化鎵二維光子晶體面射型雷射之雷射行為研究
2008
95 建構側邊鍍金波導管之表面電漿子Fabry-Perot量子點雷射
2008
96 氮化銦鎵/氮化鎵多重量子井發光二極體之特性與內部量子效率研究
2008
97 非極性"a"平面氧化鋅多重量子井結構之光學特性
2008
98 應用奈米柱陣列與十二重準光子晶體之氮化銦鎵垂直式發光二極體 2008
99 氧化銦錫奈米柱狀結構應用於提升氮化鎵發光二極體之出光效率
2008
100 化學機械研磨法之垂直結構發光二極體
2008
101 非極性氮化鎵光電元件之磊晶成長
2008
102 以有機金屬化學氣相沈積法製作無極性氮化鎵發光元件以及功能性奈米結構 2008
103 LED亮度恆定之回授控制系統設計 2008
104 非極性氮化鎵及氧化鋅之結構及光學特性之研究
2007
105 氮化鎵二維光子晶體面射型雷射光學特性之研究
2007
106 應用光致電化學法製作高效率氮化鎵基發光二極體
2007
107 Numerical Study on Optimization of Active Layer Structures for GaN/AlGaN and InGaN/AlInGaN MQW Laser Diodes
2007
108 具矽量子點超晶格結構之光伏特及光偵測元件 2007
109 含自組裝矽量子點之奈米孔洞氧化矽複合材料閘極之非揮發記憶體
2007
110 量子點面射型雷射動態特性之研究
2007
111 陣列微米孔洞表面糙化製程對於砷化鎵太陽電池效率之影響
2007
112 具混合式反射鏡共振腔面射型雷射之研究
2007
113 三五族半導體發光元件結構優化之研究
2007
114 氮化鎵材料發光二極體與面射型雷射之製作與特性研究
2007
115 應用於紅,藍,綠發光二極體色彩穩定之控制回饋系統設計
2007
116 摻雜銦/鎵之氧化鋅奈米結構與光學特性之研究
2007
117 氮化銦鎵/氮化鎵多重量子井發光二極體之光學特性與內部量子效率研究
2007
118 分區掃描式色序法之液晶顯示器背光驅動控制系統
2007
119 富含奈米矽晶之過矽二氧化矽發光材料與元件
2006
120 利用電路設計技巧達到低電壓低功率消耗之靜態記憶體操作
2006
121 可自動溫度補償Self Refresh對低功率動態隨機存取記憶體影響之特性分析與量測方法
2006
122 非揮發性記憶體之低功率消耗及低工作電壓之感測放大器
2006
123 奈米製程技術在氮化鎵相關發光元件之研究
2006
124 星形環狀被動式光纖網路之錯誤偵測與自動復原機制
2006
125 以聚集離子束製備多層量子井氮化鎵奈米柱之光學特性研究
2006
126 Al/HfO2/Si電容應用於電壓控制振盪器電路之研究
2006
127 無扇式LED背光板之熱計算-使用有限元素法
2006
128 高效率光子晶体發光二極体之研究
2006
129 利用簡單熱氣相沉積法成長之氧化銦奈米結構之相關特性研究
2006
130 不同厚度之非極性"a"平面氮化銦鎵多重量子井結構之光學特性
2006
131 利用反向脈衝光時鐘注入半導體光放大器進行非歸零/歸零格式之轉換研究
2006
132 氮化鎵二維面射型光子晶體分散回饋式雷射之研究
2006
133 以表面粗化及藍寶石基板幾何形狀化技術提升氮化鎵覆晶發光二極體之外部量子效率
2006
134 紫外至可見光之奈米結構光偵測器
2006
135 使用量子點雷射減慢光訊息行進速度
2006
136 脈衝方式驅動LED背光模組降低動態影像陰影
2006
137 利用有機金屬氣相沈積法成長氮化鎵量子侷限發光元件之研究
2005
138 面射型雷射製程技術之研究
2005
139 850nm面射型雷射之高速特性與等效電路萃取
2005
140 中斷成長在有機金屬氣相沉積氮化銦鎵量子點時的效應研究
2005
141 氮化鎵族奈米結構之光學特性
2005
142 量子點面射型雷射高頻特性之研究
2005
143 利用寬能隙矽氧奈米結構物製作紫外到可見光之光偵測器
2005
144 利用微米透鏡陣列與表面粗化加強垂直式氮化鎵發光二極體發光強度
2005
145 矽基板上矽奈米柱的形成與特性分析
2005
146 氮化鎵面射型雷射製程技術之研究
2005
147 利用濕蝕刻基板提高氮化鎵發光二極體外部量子效應
2005
148 光子晶體面射型雷射特性之研究
2005
149 LED背光源整合系統設計之色溫管理
2005
150 低維度氮化鎵族發光元件之研究
2004
151 面射型雷射高頻特性之研究
2004
152 金屬化製程對分離式閘極快閃記憶體抹除特性之影響 2004
153 氮化鎵面射型雷射及微共振腔元件之研究
2004
154 摻氮及氮化鎵族奈米材料之光學特性
2004
155 氮化鎵族量子侷限結構之光學特性研究
2004
156 利用雷射剝離技術製作光激發氮化鎵族垂直共振腔面射型雷射之特性研究
2004
157 InAlGaN在藍紫光半導體雷射和紫外光發光二極體的模擬研究
2004
158 介相材料建構奈米光電元件特性之研究
2004
159 氮化鎵微米孔矩陣發光二極體
2004
160 850nm高速和光子晶體面射型雷射之特性量測與分析
2004
161 長波長與短波長面射型雷射製程之研究
2004
162 氧化侷限面射型雷射之二維(時間和空間)模擬分析
2003
163 以10GHz鎖相迴路相移器為基礎的鎖模光纖雷射頻率穩定與時基調整電路 2003
164 快速零抹拭循序式解碼器之研究 1995