1 |
Efficiency improvement of GaN-based ultraviolet light-emitting diodes with reactive plasma deposited AlN nucleation layer on patterned sapphire substrate |
2014-09-16 |
2 |
Toward Omnidirectional Light Absorption by Plasmonic Effect for High-Efficiency Flexible Nonvacuum Cu(In,Ga)Se-2 Thin Film Solar Cells |
2014-09-01 |
3 |
Fabrication and characterization of back-side illuminated InGaN/GaN solar cells with periodic via-holes etching and Bragg mirror processes |
2014-08-25 |
4 |
Design and fabrication of a InGaN vertical-cavity surface-emitting laser with a composition-graded electron-blocking layer |
2014-08-01 |
5 |
Performance enhancement of GaN-based flip-chip ultraviolet light-emitting diodes with a RPD AlN nucleation layer on patterned sapphire substrate |
2014-08-01 |
6 |
Superhydrophobic, antiadhesive, and antireflective surfaces mediated by hybrid biomimetic salvinia leaf with moth-eye structures |
2014-08-01 |
7 |
A Highly Efficient Hybrid GaAs Solar Cell Based on Colloidal-Quantum-Dot-Sensitization |
2014-07-18 |
8 |
High performance 380-nm ultraviolet light-emitting-diodes with 3% efficiency droop by using free-standing GaN substrate manufacturing from GaAs substrate |
2014-07-07 |
9 |
High density GaN/AlN quantum dots for deep UV LED with high quantum efficiency and temperature stability |
2014-06-05 |
10 |
Polarization ratio enhancement of a-plane GaN light emitting diodes by asymmetric two-dimensional photonic crystals |
2014-05-21 |
11 |
High-Efficiency and Crack-Free InGaN-Based LEDs on a 6-inch Si (111) Substrate With a Composite Buffer Layer Structure and Quaternary Superlattices Electron-Blocking Layers |
2014-05-01 |
12 |
Natural substrate lift-off technique for vertical light-emitting diodes |
2014-04-01 |
13 |
Enhanced light harvesting of nitride-based nanopillars covered with ZnO using indium-tin oxide nanowhiskers |
2014-04-01 |
14 |
The Effect of CdS QDs Structure on the InGaP/GaAs/Ge Triple Junction Solar Cell Efficiency |
2014-03-01 |
15 |
Improvement of emission uniformity by using micro-cone patterned PDMS film |
2014-02-24 |
16 |
Flexible-textured polydimethylsiloxane antireflection structure for enhancing omnidirectional photovoltaic performance of Cu(In,Ga)Se-2 solar cells |
2014-02-10 |
17 |
Hole injection and electron overflow improvement in InGaN/GaN light-emitting diodes by a tapered AlGaN electron blocking layer |
2014-01-13 |
18 |
Performance of GaN-based light-emitting diodes fabricated using GaN epilayers grown on silicon substrates |
2014-01-13 |
19 |
White light emitting diodes with enhanced CCT uniformity and luminous flux using ZrO2 nanoparticles |
2014-01-01 |
20 |
Enabling Lambertian-Like Warm White Organic Light-Emitting Diodes with a Yellow Phosphor Embedded Flexible Film |
2014-01-01 |
21 |
Device Modeling of the Performance of Cu(In,Ga)Se-2 Solar Cells with V-Shaped Bandgap Profiles |
2014-01-01 |
22 |
Efficiency and Droop Improvement in GaN-Based High-Voltage Flip Chip LEDs |
2014-01-01 |
23 |
Waveguide based energy transfer with gold nanoclusters for detection of hydrogen peroxide |
2014-01-01 |
24 |
Investigation and Comparison of the GaN-Based Light-Emitting Diodes Grown on High Aspect Ratio Nano-Cone and General Micro-Cone Patterned Sapphire Substrate |
2013-12-01 |
25 |
Room temperature ultraviolet GaN metal-coated nanorod laser |
2013-11-04 |
26 |
Advantages of Blue LEDs With Graded-Composition AlGaN/GaN Superlattice EBL |
2013-11-01 |
27 |
An Investigation of the Optical Analysis in White Light-Emitting Diodes With Conformal and Remote Phosphor Structure |
2013-11-01 |
28 |
Electrically driven green, olivine, and amber color nanopyramid light emitting diodes |
2013-10-07 |
29 |
Improving the Angular Color Uniformity of Hybrid Phosphor Structures in White Light-Emitting Diodes |
2013-10-01 |
30 |
Effect of the Thermal Characteristics of Phosphor for the Conformal and Remote Structures in White Light-Emitting Diodes |
2013-10-01 |
31 |
A look into the origin of shunt leakage current of Cu(In,Ga)Se-2 solar cells via experimental and simulation methods |
2013-10-01 |
32 |
Improving efficiency of InGaN/GaN multiple quantum well solar cells using CdS quantum dots and distributed Bragg reflectors |
2013-10-01 |
33 |
The metal grating design of plasmonic hybrid III-V/Si evanescent lasers |
2013-08-26 |
34 |
Multi-functional stacked light-trapping structure for stabilizing and boosting solar-electricity efficiency of hydrogenated amorphous silicon solar cells |
2013-08-12 |
35 |
Distance dependence of energy transfer from InGaN quantum wells to graphene oxide |
2013-08-01 |
36 |
Non-antireflective Scheme for Efficiency Enhancement of Cu(In,Ga)Se-2 Nanotip Array Solar Cells |
2013-08-01 |
37 |
Projected Efficiency of Polarization-Matched p-InxGa1-xN/i-InyGa1-yN/n-GaN Double Heterojunction Solar Cells |
2013-07-01 |
38 |
Enhanced Luminous Efficiency of WLEDs Using a Dual-Layer Structure of the Remote Phosphor Package |
2013-06-15 |
39 |
The site-selective excitation and the dynamical electron-lattice interaction on the luminescence of YBO3: Sb3+ |
2013-05-01 |
40 |
Efficiency and Droop Improvement in Hybrid Warm White LEDs Using InGaN and AlGaInP High-Voltage LEDs |
2013-04-01 |
41 |
Enhanced Light Output Power and Growth Mechanism of GaN-Based Light-Emitting Diodes Grown on Cone-Shaped SiO2 Patterned Template |
2013-04-01 |
42 |
High thermal stability of correlated color temperature using current compensation in hybrid warm white high-voltage LEDs |
2013-03-11 |
43 |
Microstructure and magnetic properties of oxidized titanium nitride thin films in situ grown by pulsed laser deposition |
2013-02-20 |
44 |
Optical coupling from InGaAs subcell to InGaP subcell in InGaP/InGaAs/Ge multi-junction solar cells |
2013-01-14 |
45 |
Large-area ultraviolet GaN-based photonic quasicrystal laser with high-efficiency green color emission of semipolar {10-11} In0.3Ga0.7N/GaN multiple quantum wells |
2013-01-07 |
46 |
Efficient energy transfer from InGaN quantum wells to Ag nanoparticles |
2013-01-01 |
47 |
Enhanced broadband and omnidirectional performance of Cu(In,Ga)Se-2 solar cells with ZnO functional nanotree arrays |
2013-01-01 |
48 |
Dandelion-shaped nanostructures for enhancing omnidirectional photovoltaic performance |
2013-01-01 |
49 |
Effect of the surface-plasmon-exciton coupling and charge transfer process on the photoluminescence of metal-semiconductor nanostructures |
2013-01-01 |
50 |
Resonant-Enhanced Full-Color Emission of Quantum-Dot-Based Display Technology Using a Pulsed Spray Method |
2012-12-19 |
51 |
Efficiency and droop improvement in green InGaN/GaN light-emitting diodes on GaN nanorods template with SiO2 nanomasks |
2012-12-03 |
52 |
Optimization of the Single-Phased White Phosphor of Li2SrSiO4:Eu2+, Ce3+ for Light-Emitting Diodes by Using the Combinatorial Approach Assisted with the Taguchi Method |
2012-12-01 |
53 |
Observation of unusual optical transitions in thin-film Cu(In,Ga)Se-2 solar cells |
2012-11-05 |
54 |
Modeling and Optimization of Sub-Wavelength Grating Nanostructures on Cu(In,Ga)Se-2 Solar Cell |
2012-10-01 |
55 |
Enhancement of power conversion efficiency in GaAs solar cells with dual-layer quantum dots using flexible PDMS film |
2012-09-01 |
56 |
A New Parallel Domain-Decomposed Chebyshev Collocation Method for Atmospheric and Oceanic Modeling |
2012-08-01 |
57 |
The Influence of the Thermal Effect on CdSe/ZnS Quantum Dots in Light-Emitting Diodes |
2012-07-15 |
58 |
Light Extraction Enhancement of GaN-Based Light-Emitting Diodes Using Crown-Shaped Patterned Sapphire Substrates |
2012-07-15 |
59 |
Improvement in uniformity of emission by ZrO2 nano-particles for white LEDs |
2012-07-05 |
60 |
UV-Visible Light-Trapping Structure of Loosely Packed Submicrometer Silica Sphere for Amorphous Silicon Solar Cells |
2012-07-01 |
61 |
Fabrication and luminescent properties of core-shell InGaN/GaN multiple quantum wells on GaN nanopillars |
2012-06-25 |
62 |
Ultraviolet emission efficiency enhancement of a-plane AlGaN/GaN multiple-quantum-wells with increasing quantum well thickness |
2012-06-25 |
63 |
A pulsated weak-resonant-cavity laser diode with transient wavelength scanning and tracking for injection-locked RZ transmission |
2012-06-18 |
64 |
Numerical Study of (0001) Face GaN/InGaN p-i-n Solar Cell With Compositional Grading Configuration |
2012-06-15 |
65 |
Ultrafast carrier dynamics in Cu(In,Ga)Se-2 thin films probed by femtosecond pump-probe spectroscopy |
2012-06-04 |
66 |
Lasing action in gallium nitride quasicrystal nanorod arrays |
2012-05-21 |
67 |
Magnitude-tunable sub-THz shear phonons in a non-polar GaN multiple-quantum-well p-i-n diode |
2012-05-14 |
68 |
Nano-patterned glass superstrates with different aspect ratios for enhanced light harvesting in a-Si:H thin film solar cells |
2012-05-07 |
69 |
Improvement of lumen efficiency in white light-emitting diodes with air-gap embedded package |
2012-05-01 |
70 |
Efficiency and Droop Improvement in InGaN/GaN Light-Emitting Diodes by Selective Carrier Distribution Manipulation |
2012-04-01 |
71 |
Large Area of Ultraviolet GaN-Based Photonic Quasicrystal Laser |
2012-04-01 |
72 |
Light Output Enhancement of GaN-Based Light-Emitting Diodes by Optimizing SiO2 Nanorod-Array Depth Patterned Sapphire Substrate |
2012-04-01 |
73 |
A novel randomly textured phosphor structure for highly efficient white light-emitting diodes |
2012-03-16 |
74 |
Highly efficient CdS-quantum-dot-sensitized GaAs solar cells |
2012-03-12 |
75 |
Antireflection and light trapping of subwavelength surface structures formed by colloidal lithography on thin film solar cells |
2012-03-01 |
76 |
Electrically driven nanopyramid green light emitting diode |
2012-02-06 |
77 |
High efficiency GaN-based light-emitting diodes with embedded air voids/SiO(2) nanomasks |
2012-02-03 |
78 |
Investigation of Hot-Carrier Stress Effect on High-Frequency Performance of Laterally Diffused Metal-Oxide-Semiconductor Transistors |
2012-02-01 |
79 |
Crystal structure characterization, optical and photoluminescent properties of tunable yellow- to orange-emitting Y-2(Ca,Sr)F4S2:Ce3+ phosphors for solid-state lighting |
2012-01-01 |
80 |
Room temperature lasing with high group index in metal-coated GaN nanoring |
2011-12-19 |
81 |
Enhanced Output Power of GaN-Based Resonance Cavity Light-Emitting Diodes With Optimized ITO Design |
2011-12-15 |
82 |
Study of 375 nm ultraviolet InGaN/AlGaN light-emitting diodes with heavily Si-doped GaN transition layer in growth mode, internal quantum efficiency, and device performance |
2011-12-15 |
83 |
Optical investigation of A-plane ZnO/ZnMgO multiple quantum wells grown by pulsed laser deposition |
2011-12-01 |
84 |
Characteristics of Current-Injected GaN-Based Vertical-Cavity Surface-Emitting Lasers |
2011-11-01 |
85 |
Hole transport improvement in InGaN/GaN light-emitting diodes by graded-composition multiple quantum barriers |
2011-10-24 |
86 |
Large Scale Single-Crystal Cu(In,Ga)Se(2) Nanotip Arrays For High Efficiency Solar Cell |
2011-10-01 |
87 |
Conversion Efficiency Enhancement of GaN/In(0.11)Ga(0.89)N Solar Cells With Nano Patterned Sapphire and Biomimetic Surface Antireflection Process |
2011-09-15 |
88 |
Investigation of Emission Polarization and Strain in InGaN-GaN Multiple Quantum Wells on Nanorod Epitaxially Lateral Overgrowth Templates |
2011-09-15 |
89 |
Lasing at exciton transition in optically pumped gallium nitride nanopillars |
2011-09-12 |
90 |
Enhanced efficiency for c-Si solar cell with nanopillar array via quantum dots layers |
2011-09-12 |
91 |
Angle-resolved characteristics of silicon photovoltaics with passivated conical-frustum nanostructures |
2011-09-01 |
92 |
A Novel Tunable Green- to Yellow-Emitting beta-YFS:Ce(3+) Phosphor for Solid-State Lighting |
2011-08-01 |
93 |
Efficiency and Droop Improvement in GaN-Based High-Voltage Light-Emitting Diodes |
2011-08-01 |
94 |
Optical Properties of A-Plane InGaN/GaN Multiple Quantum Wells Grown on Nanorod Lateral Overgrowth Templates |
2011-08-01 |
95 |
High Q microcavity light emitting diodes with buried AlN current apertures |
2011-07-25 |
96 |
Inductively coupled plasma grown semiconductor films for low cost solar cells with improved light-soaking stability |
2011-07-18 |
97 |
Embedded biomimetic nanostructures for enhanced optical absorption in thin-film solar cells |
2011-07-04 |
98 |
Patterned structure of REMOTE PHOSPHOR for phosphor-converted white LEDs |
2011-07-04 |
99 |
Highly Efficient and Bright LEDs Overgrown on GaN Nanopillar Substrates |
2011-07-01 |
100 |
Elucidating the Physical Property of the InGaN Nanorod Light-Emitting Diode: Large Tunneling Effect |
2011-07-01 |
101 |
Optical and Electrical Properties of GaN-Based Light Emitting Diodes Grown on Micro- and Nano-Scale Patterned Si Substrate |
2011-07-01 |
102 |
Reduction of Efficiency Droop in InGaN Light-Emitting Diode Grown on Self-Separated Freestanding GaN Substrates |
2011-06-15 |
103 |
Efficiency Enhancement in Single-Junction InGaP Solar Cells by Using Self-Assembled Nanospheres |
2011-06-01 |
104 |
Enhanced omnidirectional photon coupling via quasi-periodic patterning of indium-tin-oxide for organic thin-film solar cells |
2011-06-01 |
105 |
Investigation of efficiency droop for InGaN-based UV light-emitting diodes with InAlGaN barrier |
2011-05-23 |
106 |
Light Output Enhancement of UV Light-Emitting Diodes With Embedded Distributed Bragg Reflector |
2011-05-15 |
107 |
Light Output Enhancement of UV Light-Emitting Diodes With Embedded Distributed Bragg Reflector |
2011-05-15 |
108 |
High Extraction Efficiency of GaN-Based Vertical-Injection Light-Emitting Diodes Using Distinctive Indium-Tin-Oxide Nanorod by Glancing-Angle Deposition |
2011-05-01 |
109 |
Tunable Light Emission from GaN-Based Photonic Crystal with Ultraviolet AlN/AlGaN Distributed Bragg Reflector |
2011-04-01 |
110 |
Light Enhancement of Silicon-Nanocrystal-Embedded SiO(x) Film on Silicon-on-Insulator Substrate |
2011-04-01 |
111 |
Lasing in metal-coated GaN nanostripe at room temperature |
2011-03-28 |
112 |
Enhanced electron-hole plasma stimulated emission in optically pumped gallium nitride nanopillars |
2011-03-21 |
113 |
Beyond-Bandwidth Electrical Pulse Modulation of a TO-Can Packaged VCSEL for 10 Gbit/s Injection-Locked NRZ-to-RZ Transmission |
2011-03-15 |
114 |
Energy transfer from InGaN quantum wells to Au nanoclusters via optical waveguiding |
2011-03-14 |
115 |
Enhanced Stimulated Emission from Optically Pumped Gallium Nitride Nanopillars |
2011-02-01 |
116 |
2-Step self-assembly method to fabricate broadband omnidirectional antireflection coating in large scale |
2011-02-01 |
117 |
Investigation of low-temperature electroluminescence of InGaN/GaN based nanorod light emitting arrays |
2011-01-28 |
118 |
Enhanced conversion efficiency of a crystalline silicon solar cell with frustum nanorod arrays |
2011-01-03 |
119 |
Improvement in efficiency droop of GaN-based light-emitting diodes by optimization of active regions |
2011-01-01 |
120 |
GaN-Based LEDs Grown on HVPE Growth High Crystalline Quality Thick GaN Template |
2011-01-01 |
121 |
Reduction of Efficiency Droop in Semipolar (1(1)over-bar01) InGaN/GaN Light Emitting Diodes Grown on Patterned Silicon Substrates |
2011-01-01 |
122 |
In Situ and Self-Restorable Injection-Locking Monitor by Integrated Photodiode for FPLD WDM Transmitter |
2011-01-01 |
123 |
Hole injection and efficiency droop improvement in InGaN/GaN light-emitting diodes by band-engineered electron blocking layer |
2010-12-27 |
124 |
Characteristics of efficiency droop in GaN-based light emitting diodes with an insertion layer between the multiple quantum wells and n-GaN layer |
2010-12-20 |
125 |
Characterizations of low-temperature electroluminescence from ZnO nanowire light-emitting arrays on the p-GaN layer |
2010-12-15 |
126 |
Light Emission Enhancement of GaN-Based Photonic Crystal With Ultraviolet AlN/AlGaN Distributed Bragg Reflector |
2010-11-15 |
127 |
Efficiency droop alleviation in InGaN/GaN light-emitting diodes by graded-thickness multiple quantum wells |
2010-11-01 |
128 |
Investigation of Carrier Transient Response of Nanopatterned n-ZnO/a-Si(i)/p(+)-Si Photodiodes |
2010-11-01 |
129 |
Long-Cavity Fabry-Perot Laser Amplifier Transmitter With Enhanced Injection-Locking Bandwidth for WDM-PON Application |
2010-10-15 |
130 |
Structural Effects on Highly Directional Far-Field Emission Patterns of GaN-Based Micro-Cavity Light-Emitting Diodes With Photonic Crystals |
2010-10-01 |
131 |
Light Extraction Efficiency Enhancement of GaN-Based Light Emitting Diodes on n-GaN Layer Using a SiO(2) Photonic Quasi-Crystal Overgrowth |
2010-10-01 |
132 |
Optical characteristics of a-plane ZnO/Zn(0.8)Mg(0.2)O multiple quantum wells grown by pulsed laser deposition |
2010-10-01 |
133 |
Characteristics of emission polarization in a-plane nanorods embedded with InGaN/GaN multiple quantum wells |
2010-09-15 |
134 |
Continuous wave operation of current injected GaN vertical cavity surface emitting lasers at room temperature |
2010-08-16 |
135 |
Particular Failure Mechanism of GaN-Based Alternating Current Light-Emitting Diode Induced by GaO(x) Oxidation |
2010-08-01 |
136 |
Highly-directional emission patterns based on near single guided mode extraction from GaN-based ultrathin microcavity light-emitting diodes with photonic crystals |
2010-07-05 |
137 |
High extraction efficiency GaN-based light-emitting diodes on embedded SiO(2) nanorod array and nanoscale patterned sapphire substrate |
2010-06-28 |
138 |
Study of InGaN-GaN Light-Emitting Diodes With Different Last Barrier Thicknesses |
2010-06-15 |
139 |
Low efficiency droop in blue-green m-plane InGaN/GaN light emitting diodes |
2010-06-07 |
140 |
Light-Output-Power Enhancement of GaN-Based Light-Emitting Diodes on an n-GaN Layer Using a SiO(2) Photonic Quasi-Crystal Overgrowth |
2010-06-01 |
141 |
Efficiency Improvement of GaN-Based LEDs With a SiO(2) Nanorod Array and a Patterned Sapphire Substrate |
2010-06-01 |
142 |
Enhancement of light output power of GaN-based light-emitting diodes using a SiO(2) nano-scale structure on a p-GaN surface |
2010-06-01 |
143 |
Investigation of light absorption properties and acceptance angles of nanopatterned GZO/a-Si/p(+)-Si photodiodes |
2010-05-28 |
144 |
InGaN-based light-emitting diodes grown and fabricated on nanopatterned Si substrates |
2010-05-17 |
145 |
Ultraviolet GaN-based microdisk laser with AlN/AlGaN distributed Bragg reflector |
2010-04-12 |
146 |
Investigation of wavelength-dependent efficiency droop in InGaN light-emitting diodes |
2010-03-01 |
147 |
Growth and characterization of a-plane Al(x)Ga(1-x)N alloys by metalorganic chemical vapor deposition |
2010-03-01 |
148 |
Lasing characteristics at different band edges in GaN photonic crystal surface emitting lasers |
2010-02-15 |
149 |
Temperature-Dependent Electroluminescence Efficiency in Blue InGaN-GaN Light-Emitting Diodes With Different Well Widths |
2010-02-15 |
150 |
Polarization Characteristics of Quantum-Dot Vertical-Cavity Surface-Emitting Laser With Light Injection |
2010-02-01 |
151 |
Efficiency Improvement of Single-Junction In(0.5)Ga(0.5)P Solar Cell with Compositional Grading p-Emitter/Window Capping Configuration |
2010-01-01 |
152 |
Improvement in Crystalline Quality of InGaN-Based Epilayer on Sapphire via Nanoscaled Epitaxial Lateral Overgrowth |
2010-01-01 |
153 |
Double Photonic Quasi-Crystal Structure Effect on GaN-Based Vertical-Injection Light-Emitting Diodes |
2010-01-01 |
154 |
GaN Thickness Effect on Directional Light Enhancement from GaN-Based Film-Transferred Photonic Crystal Light-Emitting Diodes |
2010-01-01 |
155 |
Divergent Far-Field III-Nitride Ultrathin Film-Transferred Photonic Crystal Light-Emitting Diodes |
2010-01-01 |
156 |
Self-Assembled Two-Dimensional Surface Structures for Beam Shaping of GaN-Based Vertical-Injection Light-Emitting Diodes |
2010-01-01 |
157 |
Low Droop Nonpolar GaN/InGaN Light Emitting Diode Grown on m-Plane GaN Substrate |
2010-01-01 |
158 |
The Lasing Characteristics of GaN-based Two-dimensional Photonic Crystal Surface Emitting Lasers |
2010-01-01 |
159 |
Output Power Enhancement of Light Emitting Diodes with Defect Passivation layer |
2010-01-01 |
160 |
High Efficiency InGaP/GaAs Solar Cell with Sub-wavelength Structure on AlInP Window Layer |
2010-01-01 |
161 |
Observation of Polariton Dispersions for ZnO Microcavities in Strong Couple Regime |
2010-01-01 |
162 |
Angular-resolved Lasing Characteristics at Different Band Edges in GaN Photonic Crystal Surface Emitting Lasers |
2010-01-01 |
163 |
Hole shape effect of photonic crystals on the guided resonance modes in GaN-based ultra-thin film-transferred light-emitting diodes |
2010-01-01 |
164 |
Characterization of a-plane green light-emitting diodes using nanorod lateral overgrowth |
2010-01-01 |
165 |
Efficiency Enhancement InGaP/GaAs Dual-junction Solar Cell by Broad-band and Omnidirectional Antireflection Nanorod Arrays |
2010-01-01 |
166 |
Antireflection and Light Trapping of Periodic Subwavelength Surface Structures Formed by Colloidal Monolayer Spheres Lithography on Thin Film Solar Cells |
2010-01-01 |
167 |
Investigation of Efficiency Droop in Blue InGaN/GaN Light-Emitting Diodes with Different Well Widths |
2010-01-01 |
168 |
Internal Quantum Efficiency Measurement in InGaN/GaN UV LEDs with Patterned Sapphire Substrate by Photoluminescence and Electroluminescence Method |
2010-01-01 |
169 |
Observation of Laser Action from Gallium Nitride nanorods under optical pumping |
2010-01-01 |
170 |
LARGE-SCALE AND ENHANCED EFFICIENCY C-SI SOLAR CELL WITH MOTH-EYE-LIKE BY USING SELF-ASSEMBLED LITHOGRAPHY |
2010-01-01 |
171 |
ANGLE-RESOLVED REFLECTANCE SPECTROSCOPY OF PASSIVATED TRAPEZOID-CORN NANOSTRUCTURES FOR CRYSTALLINE SILICON PHOTOVOLTAICS |
2010-01-01 |
172 |
EFFICIENCY ENHANCEMENT InGaP/GaAs DUAL-JUNCTION SOLAR CELL WITH SUB-WAVELENGTH ANTIREFLECTION NANOROD ARRAYS |
2010-01-01 |
173 |
Defect selective passivation in GaN epitaxial growth and its application to light emitting diodes |
2009-11-23 |
174 |
Oblique electron-beam evaporation of distinctive indium-tin-oxide nanorods for enhanced light extraction from InGaN/GaN light emitting diodes |
2009-11-09 |
175 |
Photogeneration of coherent shear phonons in orientated wurtzite semiconductors by piezoelectric coupling |
2009-11-01 |
176 |
Improved Light Output Power of GaN-Based Light-Emitting Diodes Using Double Photonic Quasi-Crystal Patterns |
2009-11-01 |
177 |
Nonvolatile memory with switching interfacial polar structures of nano Si-in-mesoporous silica |
2009-10-05 |
178 |
Enhanced Light Extraction in Wafer-Bonded AlGaInP-Based Light-Emitting Diodes via Micro- and Nanoscale Surface Textured |
2009-10-01 |
179 |
High-Performance InGaN-Based Green Resonant-Cavity Light-Emitting Diodes for Plastic Optical Fiber Applications |
2009-09-15 |
180 |
Bilateral Exchange of Soft-Information for Iterative Reliability-Based Decoding with Adaptive Belief Propagation |
2009-09-01 |
181 |
Investigation of GaN-based light emitting diodes with nano-hole patterned sapphire substrate (NHPSS) by nano-imprint lithography |
2009-08-25 |
182 |
Characteristics of a-Plane Green Light-Emitting Diode Grown on r-Plane Sapphire |
2009-08-15 |
183 |
Efficiency improvement of single-junction InGaP solar cells fabricated by a novel micro-hole array surface texture process |
2009-08-12 |
184 |
Enhanced light output power of GaN-based vertical-injection light-emitting diodes with a 12-fold photonic quasi-crystal by nano-imprint lithography |
2009-08-12 |
185 |
Freestanding high quality GaN substrate by associated GaN nanorods self-separated hydride vapor-phase epitaxy |
2009-08-03 |
186 |
High efficiency light emitting diode with anisotropically etched GaN-sapphire interface |
2009-07-27 |
187 |
Interfacial Polar-Bonding-Induced Multifunctionality of Nano-Silicon in Mesoporous Silica |
2009-07-10 |
188 |
Effect of Controlled Growth Dynamics on the Microstructure of Nonpolar a-Plane GaN Revealed by X-ray Diffraction |
2009-07-01 |
189 |
Study of the Excitation Power Dependent Internal Quantum Efficiency in InGaN/GaN LEDs Grown on Patterned Sapphire Substrate |
2009-07-01 |
190 |
Size-Dependent Strain Relaxation and Optical Characteristics of InGaN/GaN Nanorod LEDs |
2009-07-01 |
191 |
Far-Field and Near-Field Distribution of GaN-Based Photonic Crystal LEDs With Guided Mode Extraction |
2009-07-01 |
192 |
Nanorod epitaxial lateral overgrowth of a-plane GaN with low dislocation density |
2009-06-22 |
193 |
Near-infrared silicon quantum dots metal-oxide-semiconductor field-effect transistor photodetector |
2009-06-15 |
194 |
Far-field of GaN film-transferred green light-emitting diodes with two-dimensional photonic crystals |
2009-05-25 |
195 |
Extraction Efficiency Enhancement of GaN-Based Light-Emitting Diodes by Microhole Array and Roughened Surface Oxide |
2009-05-01 |
196 |
Improving Light Output Power of the GaN-Based Vertical-Injection Light-Emitting Diodes by Mg(+) Implanted Current Blocking Layer |
2009-05-01 |
197 |
Dynamic Characteristics and Linewidth Enhancement Factor of Quantum-Dot Vertical-Cavity Surface-Emitting Lasers |
2009-05-01 |
198 |
Development of GaN-Based Vertical-Cavity Surface-Emitting Lasers |
2009-05-01 |
199 |
Efficiency Enhancement of GaAs Photovoltaics Employing Antireflective Indium Tin Oxide Nanocolumns |
2009-04-27 |
200 |
High output power density from GaN-based two-dimensional nanorod light-emitting diode arrays |
2009-04-06 |
201 |
Numerical study of optical properties of InGaN multi-quantum-well laser diodes with polarization-matched AlInGaN barrier layers |
2009-04-01 |
202 |
Improvement of the Efficiency of InGaN-GaN Quantum-Well Light-Emitting Diodes Grown With a Pulsed-Trimethylindium Flow Process |
2009-04-01 |
203 |
Directional light extraction enhancement from GaN-based film-transferred photonic crystal light-emitting diodes |
2009-03-23 |
204 |
Side-mode transmission diagnosis of a multichannel selectable injection-locked Fabry-Perot Laser Diode with anti-reflection coated front facet |
2009-03-16 |
205 |
Optical properties of a-plane InGaN/GaN multiple quantum wells on r-plane sapphire substrates with different indium compositions |
2009-03-15 |
206 |
Nitride-Based Thin-Film Light-Emitting Diodes With Photonic Quasi-Crystal Surface |
2009-03-01 |
207 |
Efficiency Enhancement and Beam Shaping of GaN-InGaN Vertical-Injection Light-Emitting Diodes via High-Aspect-Ratio Nanorod Arrays |
2009-01-01 |
208 |
Aspect-ratio-dependent ultra-low reflection and luminescence of dry-etched Si nanopillars on Si substrate |
2009-01-01 |
209 |
Output Power Enhancement of Vertical-Injection Ultraviolet Light-Emitting Diodes by GaN-Free and Surface Roughness Structures |
2009-01-01 |
210 |
Density-dependent energy relaxation of hot electrons in InN epilayers |
2009-01-01 |
211 |
Improving Performance of InGaN/GaN Light-Emitting Diodes and GaAs Solar Cells Using Luminescent Gold Nanoclusters |
2009-01-01 |
212 |
Enhancing the Emission Efficiency of In(0.2)Ga(0.8)N/GaN MQW Blue LED by Using Appropriately Misoriented Sapphire Substrates |
2009-01-01 |
213 |
Carrier localization degree of In(0.2)Ga(0.8)N/GaN multiple quantum wells grown on vicinal sapphire substrates |
2009-01-01 |
214 |
Blue GaN-based vertical cavity surface emitting lasers by CW current injection at 77K |
2009-01-01 |
215 |
Numerical study on optimization of InGaN multi-quantum-well laser diodes with polarization-matched AlInGaN barrier layers |
2009-01-01 |
216 |
Strong Exciton Polariton Dispersion in Multimode GaN Microcavity |
2009-01-01 |
217 |
Investigation of Composition-Dependent Optical Phonon Modes in Al(x)Ga(1-x)N Epitaxial Layers Grown on Sapphire Substrates |
2009-01-01 |
218 |
Novel Indium-Tin-Oxide Nano-Whiskers for Enhanced Transmission of Surface-Textured Silicon Photovoltaic Cells |
2009-01-01 |
219 |
High Light-Extraction Efficiency GaN-Based Vertical Injection LEDs with Surface Nipple Array |
2009-01-01 |
220 |
Lasing Characteristics of GaN-based Photonic Crystal Surface-Emitting Lasers |
2009-01-01 |
221 |
Characteristics of Single-Chip GaN-Based Alternating Current Light-Emitting Diode |
2008-12-01 |
222 |
Investigation of InGaN/GaN power chip light emitting diodes with TiO(2)/SiO(2) omnidirectional reflector |
2008-12-01 |
223 |
High-Performance (Al(x)Ga(1-x))(0.5)In(0.5)P-Based Flip-Chip Light-Emitting Diode With a Geometric Sapphire Shaping Structure |
2008-11-01 |
224 |
Optical study of a-plane InGaN/GaN multiple quantum wells with different well widths grown by metal-organic chemical vapor deposition |
2008-11-01 |
225 |
High quality ultraviolet AlGaN/GaN multiple quantum wells with atomic layer deposition grown AlGaN barriers |
2008-09-29 |
226 |
Thermally Evaporated In2O3 Nanoloquats with Tunable Broad-Band Emissions |
2008-09-01 |
227 |
Numerical Study on Optimization of Active Layer Structures for GaN/AlGaN Multiple-Quantum-Well Laser Diodes |
2008-09-01 |
228 |
Nanoscale epitaxial lateral overgrowth of GaN-based light-emitting diodes on a SiO(2) nanorod-array patterned sapphire template |
2008-08-25 |
229 |
Strain relaxation induced microphotoluminescence characteristics of a single InGaN-based nanopillar fabricated by focused ion beam milling |
2008-08-25 |
230 |
Relative Intensity Noise Characteristics of Long-Wavelength Quantum Dot Vertical-Cavity Surface-Emitting Lasers |
2008-08-01 |
231 |
Investigation of GaN-based vertical-injection light-emitting diodes with GaN nano-cone structure by ICP etching |
2008-07-25 |
232 |
Fabrication and Characterization of Temperature Insensitive 660-nm Resonant-Cavity LEDs |
2008-07-01 |
233 |
Polarized light emission from photonic crystal light-emitting diodes |
2008-06-16 |
234 |
Broadband and omnidirectional antireflection employing disordered GaN nanopillars |
2008-06-09 |
235 |
Anisotropy of light extraction from GaN two-dimensional photonic crystals |
2008-05-12 |
236 |
Enhanced light output from a nitride-based power chip of green light-emitting diodes with nano-rough surface using nanoimprint lithography |
2008-05-07 |
237 |
Characteristics of InGaAs submonolayer quantum-dot and InAs quantum-dot photonic-crystal vertical-cavity surface-emitting lasers |
2008-05-01 |
238 |
Enhanced light extraction of InGaN-based green LEDs by nano-imprinted 2D photonic crystal pattern |
2008-05-01 |
239 |
Nano-processing techniques applied in GaN-Based light-emitting devices with self-assembly Ni nano-masks |
2008-05-01 |
240 |
Study of GaN-based light-emitting diodes grown on chemical wet-etching-patterned sapphire substrate with V-shaped pits roughening surfaces |
2008-05-01 |
241 |
Further enhancement of nitride-based near-ultraviolet vertical-injection light-emitting diodes by adopting a roughened mesh-surface |
2008-05-01 |
242 |
Enhanced vertical extraction efficiency from a thin-film InGaN-GaN light-emitting diode using a 2-D photonic crystal and an omnidirectional reflector |
2008-05-01 |
243 |
Ultrafast carrier dynamics of InGaAsN and InGaAs single quantum wells |
2008-04-21 |
244 |
40 GHz Phase Shifter based on Semiconductor Laser |
2008-04-10 |
245 |
CW lasing of current injection blue GaN-based vertical cavity surface emitting laser |
2008-04-07 |
246 |
Improvement of light output in GaN-based power chip light-emitting diodes with a nano-rough surface by nanoimprint lithography |
2008-04-01 |
247 |
Small GaN-based light-emitting diodes with a single electrode pad fabricated on a sapphire substrate |
2008-04-01 |
248 |
Phase transformation and optical characteristics of porous germanium thin film |
2008-03-31 |
249 |
Chirp and error rate analyses of an optical-injection gain-switching VCSEL based all-optical NRZ-to-PRZ converter |
2008-03-31 |
250 |
Enhancing the light extraction of (AlxGa1-x)(0.5)In0.5P-based light-emitting diode fabricated via geometric sapphire shaping |
2008-03-01 |
251 |
High-brightness InGaN-GaN flip-chip light-emitting diodes with triple-light scatteriny layers |
2008-03-01 |
252 |
Characteristics of multileaf holey light-emitting diodes for fiber-optic communications |
2008-02-01 |
253 |
High brightness GaN-based flip-chip light-emitting diodes by adopting geometric sapphire shaping structure |
2008-02-01 |
254 |
Optically modulated internal strain in InGaN quantum dots grown on SiNx nano masks |
2008-01-21 |
255 |
GaN-based two-dimensional surface-emitting photonic crystal lasers with AlN/GaN distributed Bragg reflector |
2008-01-07 |
256 |
Characteristics of single-mode InGaAs sub-monolayer quantum-dot photonic-crystal VCSELs emitting in the 990 nm range |
2008-01-01 |
257 |
Photonic-crystal light-emitting diodes on p-type GaAs substrates for optical communications |
2008-01-01 |
258 |
Single-mode 780 nm vertical-cavity surface-emitting lasers with multi-leaf holey structure |
2008-01-01 |
259 |
Effects of built-in polarization and carrier overflow on InGaN quantum-well lasers with electronic blocking layers |
2008-01-01 |
260 |
One-shot exposure for patterning two-dimensional photonic crystals to enhance light extraction of InGaN-based green LEDs |
2008-01-01 |
261 |
Luminance enhancement of flip-chip light-emitting diodes by geometric sapphire shaping structure |
2008-01-01 |
262 |
Wet mesa etching process in InGaN-based light emitting diodes |
2008-01-01 |
263 |
Enhancement of light output intensity by integrating ZnO nanorod arrays on GaN-based LLO vertical LEDs |
2008-01-01 |
264 |
Abnormal PL spectrum in InGaN MQW surface emitting cavity - art. no. 69080L |
2008-01-01 |
265 |
AlGaN/GaN multiple quantum wells grown by atomic layer deposition - art. no. 68941V |
2008-01-01 |
266 |
Improvement of GaN-based LED with SiO2 photonic crystal on an ITO film by holographic lithography |
2008-01-01 |
267 |
Broad Angular and Spectral Anti-Reflection Employing GaN Nano-Pillar Structures |
2008-01-01 |
268 |
Optical studies of InN epilayers on Si substrates with different buffer layers |
2007-12-01 |
269 |
Fabrication of InGaN/GaN nanorod light-emitting diodes with self-assembled Ni metal islands |
2007-11-07 |
270 |
Characteristics of broad-area InGaAs submonolayer quantum-dot vertical-cavity surface-emitting lasers |
2007-10-01 |
271 |
GaN-based high-Q vertical-cavity light-emitting diodes |
2007-10-01 |
272 |
Anisotropy of light extraction from two-dimensional photonic crystal light-emitting diodes |
2007-09-17 |
273 |
High-power single-mode submonolayer quantum-dot photonic crystal vertical-cavity surface-emitting lasers |
2007-09-01 |
274 |
Optical properties of In0.3Ga0.7N/GaN green emission nanorods fabricated by plasma etching |
2007-08-22 |
275 |
Lasing characteristics of a GaN photonic crystal nanocavity light source |
2007-07-23 |
276 |
Dislocation reduction in GaN grown on stripe patterned r-plane sapphire substrates |
2007-07-09 |
277 |
Improvement of efficiency and ESD characteristics of ultraviolet light-emitting diodes by inserting AlGaN and SiN buffer layers |
2007-07-01 |
278 |
Fabrication and characteristics of thin-film InGaN-GaN light-emitting diodes with TiO2/SiO2 omnidirectional reflectors |
2007-07-01 |
279 |
Enhancement of flip-chip light-emitting diodes with omni-directional reflector and textured micropillar arrays |
2007-07-01 |
280 |
Fabrication of microcavity light-emitting diodes using highly reflective AlN-GaN and Ta2O5-SiO2 distributed Bragg mirrors |
2007-07-01 |
281 |
Reliable architecture for high-capacity fiber-radio systems |
2007-07-01 |
282 |
Highly strained InGaAs/GaAs quantum well vertical-cavity surface-emitting lasers |
2007-06-01 |
283 |
High brightness GaN-based light-emitting diodes |
2007-06-01 |
284 |
Beam profile characteristics of InGaAs sub-monolayer quantum-dot photonic-crystal VCSELs |
2007-06-01 |
285 |
Characteristics of P-substrate small-aperture holey light-emitting diodes for fiber-optic applications |
2007-05-01 |
286 |
Light-output enhancement of nano-roughened GaN laser lift-off light-emitting diodes formed by ICP dry etching |
2007-05-01 |
287 |
Optical characteristics of a-plane InGaN/GaN multiple quantum wells with different well widths |
2007-04-30 |
288 |
Low refractive index Si nanopillars on Si substrate |
2007-04-30 |
289 |
Dichromatic InGaN-based white light emitting diodes by using laser lift-off and wafer-bonding schemes |
2007-04-16 |
290 |
Optical properties of InGaN quantum dots grown by SiN(x) nanomasks |
2007-04-15 |
291 |
Anomalous microphotoluminescence of high-aspect-ratio Si nanopillars formatted by dry-etching Si substrate with self-aggregated Ni nanodot mask |
2007-04-02 |
292 |
Characteristics of cross-shaped polarization-switching vertical-cavity surface-emitting lasers for dual-channel communications |
2007-04-01 |
293 |
Nano-roughening n-side surface of AlGaInP-based LEDs for increasing extraction efficiency |
2007-03-25 |
294 |
Study on optimal growth conditions of a-plane GaN grown on r-plane sapphire by metal-organic chemical vapor deposition |
2007-03-15 |
295 |
High-performance GaN-based vertical-injection light-emitting diodes with TiO2-SiO2 omnidirectional reflector and n-GaN roughness |
2007-03-01 |
296 |
Enhanced photoresponse of a metal-oxide-semiconductor photodetector with silicon nanocrystals embedded in the oxide layer |
2007-01-29 |
297 |
Investigation of InGaN/GaN light emitting diodes with nano-roughened surface by excimer laser etching method |
2007-01-25 |
298 |
Effect of growth conditions on the Al composition and quality of AlGaN film |
2007-01-15 |
299 |
Recent progress on GaN-based vertical cavity surface emitting lasers - art. no. 67660G |
2007-01-01 |
300 |
Observations on surface morphologies and dislocations of a-plane GaN grown by metal organic chemical vapor deposition |
2007-01-01 |
301 |
Reflectance study of nano-scaled textured surfaces |
2007-01-01 |
302 |
InGaN/GaN nanostripe grown on pattern sapphire by metal organic chemical vapor deposition |
2007-01-01 |
303 |
Enhancement of InGaN/GaN flip-chip ITO LEDs with incline sidewalls coated with TiO2/SiO2 omnidirectional reflector |
2007-01-01 |
304 |
Efficiency enhancement of GaN-based power-chip LEDs with sidewall roughness by natural lithography |
2007-01-01 |
305 |
Fabrication and characterization of InGaN-based green resonant-cavity LEDs using hydrogen ion-implantation techniques |
2007-01-01 |
306 |
Tunable slow light device using quantum dot semiconductor laser |
2006-12-25 |
307 |
Trenched epitaxial lateral overgrowth of fast coalesced a-plane GaN with low dislocation density |
2006-12-18 |
308 |
Effect of oxygen on characteristics of nickel oxide/indium tin oxide heterojunction diodes |
2006-12-15 |
309 |
Characteristics of single-mode InGaAs submonolayer quantum-dot photonic-crystal vertical-cavity surface-emitting lasers |
2006-12-01 |
310 |
Light extraction enhancement of InGaN-based green LEDs with a composite omnidirectional reflector |
2006-12-01 |
311 |
High light-extraction GaN-based vertical LEDs with double diffuse surfaces |
2006-11-01 |
312 |
Phosphor-free GaN-based transverse junction light emitting diodes for the generation of white light |
2006-11-01 |
313 |
Improvement of InGaN/GaN light emitting diode performance with a nano-roughened p-GaN surface by excimer laser-irradiation |
2006-10-10 |
314 |
The carrier blocking effect on 850 nm InAlGaAs/AlGaAs vertical-cavity surface-emitting lasers |
2006-10-01 |
315 |
ZnO nanopowders fabricated by dc thermal plasma synthesis |
2006-09-25 |
316 |
Emission characteristics of optically pumped GaN-based vertical-cavity surface-emitting lasers |
2006-09-18 |
317 |
High-power single-mode vertical-cavity surface-emitting lasers with multi-leaf holey structure |
2006-09-01 |
318 |
Enhancement of InGaN-GaN indium-tin-oxide flip-chip light-emitting diodes with TiO2-SiO2 multilayer stack omnidirectional reflector |
2006-09-01 |
319 |
Tunable optical group delay in quantum dot vertical-cavity surface-emitting laser at 10 GHz |
2006-08-31 |
320 |
Rapid self-assembly of Ni nanodots on Si substrate covered by a less-adhesive and heat-accumulated SiO2 layers |
2006-08-14 |
321 |
Single-mode InGaAs submonolayer quantum dot photonic crystal VCSELs |
2006-08-01 |
322 |
Fabrication and photoluminescence of InGaN-based nanorods fabricated by plasma etching with nanoscale nickel metal islands |
2006-07-01 |
323 |
Design and fabrication of temperature-insensitive InGaP-InGaAlP resonant-cavity light-emitting diodes |
2006-07-01 |
324 |
Nitride-based LEDs with nano-scale textured sidewalls using natural lithography |
2006-06-28 |
325 |
Optically heterodyne diagnosis of a high-saturation-power undoped InP sandwiched InGaAs p-i-n photodiode grown on GaAs |
2006-06-12 |
326 |
Aluminum incorporation into AlGaN grown by low-pressure metal organic vapor phase epitaxy |
2006-05-15 |
327 |
Temperature-dependent optical properties of In0.34Ga0.66As1-xNx/GaAs single quantum well with high nitrogen content for 1.55 mu m application grown by molecular beam epitaxy |
2006-05-15 |
328 |
Whispering gallery mode of modified octagonal quasiperiodic photonic crystal single-defect microcavity and its side-mode reduction |
2006-05-15 |
329 |
A novel method to improve VCSELs oxide-confined aperture uniformity using selective As+-implanted underlying layer |
2006-05-10 |
330 |
Catalyst-free GaN nanorods grown by metalorganic molecular beam epitaxy |
2006-05-01 |
331 |
OCDMA light source using directly modulated Fabry-Perot laser diode in an external injection scheme |
2006-05-01 |
332 |
Enhancing the output power of GaN-based LEDs grown on wet-etched patterned sapphire substrates |
2006-05-01 |
333 |
Experimental and theoretical analysis on ultraviolet 370 nm AlGaInN light-emitting diodes |
2006-05-01 |
334 |
Dynamic characteristics of long-wavelength quantum dot vertical-cavity surface-emitting lasers with light injection |
2006-04-03 |
335 |
Room-temperature operation of optically pumped blue-violet GaN-based vertical-cavity surface-emitting lasers fabricated by laser lift-off |
2006-04-01 |
336 |
InGaN self-assembled quantum dots grown by metal-organic chemical vapour deposition with growth interruption |
2006-03-28 |
337 |
Enhanced light output in InGaN-based light-emitting diodes with onmidirectional one-dimensional photonic crystals |
2006-03-01 |
338 |
GaN-based LEDs with Al-deposited V-shaped sapphire facet mirror |
2006-03-01 |
339 |
Single-mode monolithic quantum-dot VCSEL in 1.3 mu m with sidemode suppression ratio over 30 dB |
2006-03-01 |
340 |
The lasing characteristics of GaN-based vertical-cavity surface-emitting laser with AlN-GaN and Ta2O5-SiO2 distributed Bragg reflectors |
2006-03-01 |
341 |
Crack-free GaN/AlN distributed Bragg reflectors incorporated with GaN/AlN superlattices grown by metalorganic chemical vapor deposition |
2006-02-06 |
342 |
AlGaInP light-emitting diodes with stripe patterned omni-directional reflector |
2006-02-01 |
343 |
High brightness AlGaInP-based light emitting diodes by adopting the stripe-patterned omni-directional reflector |
2006-02-01 |
344 |
Photoluminescence of plasma enhanced chemical vapor deposition amorphous silicon oxide with silicon nanocrystals grown at different fluence ratios and substrate temperatures |
2006-02-01 |
345 |
Effect of annealing on low-threshold-current large-wavelength InGaAs quantum well vertical-cavity laser |
2006-02-01 |
346 |
Theoretical and experimental analysis on InAlGaAs/AlGaAs active region of 850-nm vertical-cavity surface-emitting lasers |
2006-01-01 |
347 |
1.3-mu m InAs-InGaAs quantum-dot vertical-cavity surface-emitting laser with fully doped DBRs grown by MBE |
2006-01-01 |
348 |
Fabrication and characterization of GaN-based LEDs grown on chemical wet-etched patterned sapphire substrates |
2006-01-01 |
349 |
Growth of highly strained RnGaAs quantum wells by metalorganic chemical vapor deposition with application to vertical-cavity surface-emitting laser |
2006-01-01 |
350 |
Improvement in light-output efficiency of AlGaInP LEDs fabricated on stripe patterned epitaxy |
2005-12-01 |
351 |
Effects of different n-electrode patterns on optical characteristics of large-area p-side-down InGaN light-emitting diodes fabricated by laser lift-off |
2005-11-01 |
352 |
Increasing the extraction efficiency of AlGaInP LEDs via n-side surface roughening |
2005-11-01 |
353 |
1.3 mu m quantum dot vertical-cavity surface-emitting laser with external light injection |
2005-10-27 |
354 |
Low-threshold-current-density, long-wavelength, highly strained InGaAs laser grown by metalorganic chemical vapor deposition |
2005-10-01 |
355 |
Fabrication and characterization of In(0.25)Ga(0.75)N/GaN multiple quantum wells embedded in nanorods |
2005-10-01 |
356 |
Singlemode InAs quantum dot photonic crystal VCSELs |
2005-09-29 |
357 |
Improvement in light-output efficiency of near-ultraviolet InGaN-GaN LEDs fabricated on stripe patterned sapphire substrates |
2005-09-25 |
358 |
Enhanced light output of an InGaN/GaN light emitting diode with a nano-roughened p-GaN surface |
2005-09-01 |
359 |
Fabrication and performance of blue GaN-based vertical-cavity surface emitting laser employing AlN/GaN and Ta2O5/SiO2 distributed Bragg reflector |
2005-08-22 |
360 |
Improved photoluminescence of 1.26 mu m InGaAs/GaAs quantum wells assisted by Sb surfactant and indium-graded intermediate layers |
2005-08-08 |
361 |
Temperature-dependent photoluminescence of highly strained InGaAsN/GaAs quantum wells (lambda=1.28-1.45 mu m) with GaAsP strain-compensated layers |
2005-08-01 |
362 |
Ultralow leakage In0.53Ga0.47As p-i-n photodetector grown on linearly graded metamorphic InxGa1-xP buffered GaAs substrate |
2005-06-01 |
363 |
Enhancement in light output of InGaN-based microhole array light-emitting diodes |
2005-06-01 |
364 |
High speed (> 13 GHz) modulation of 850 nm vertical cavity surface emitting lasers (VCSELs) with tapered oxide confined layer |
2005-06-01 |
365 |
Improving high-temperature performance in continuous-wave mode InGaAsN/GaAsN ridge waveguide lasers |
2005-06-01 |
366 |
Improvement of InGaN-GaN light-emitting diode performance with a nano-roughened p-GaN surface |
2005-05-01 |
367 |
Fabrication of large-area GaN-based light-emitting diodes on Cu substrate |
2005-04-01 |
368 |
10 Gbps InGaAs : Sb-G-aAs-GaAsP quantum well vertical cavity surface emitting lasers with 1.27 mu m emission wavelengths |
2005-04-01 |
369 |
Fabrication and micro-photoluminescence investigation of Mg-doped gallium nitride nanorods |
2005-04-01 |
370 |
Characterization of InGaN/GaN multiple quantum well nanorods fabricated by plasma etching with self-assembled nickel metal nanomasks |
2005-04-01 |
371 |
Photoluminescence from In0.3Ga0.7N/GaN multiple-quantum-well nanorods |
2005-04-01 |
372 |
Singlemode (SMSR > 40 dB) proton-implanted photonic crystal vertical-cavity surface-emitting lasers |
2005-03-17 |
373 |
High-speed modulation of InGaAs : Sb-GaAs-GaAsP quantum-well vertical-cavity surface-emitting lasers with 1.27-mu m emission wavelength |
2005-03-01 |
374 |
Emission of bright blue light from mesoporous silica with dense Si (Ge) nanocrystals |
2005-01-01 |
375 |
High temperature stability 850-nm In0.15Al0.08Ga0.77As/Al0.3Ga0.7As vertical-cavity surface-emitting laser with single Al0.75Ga0.25As current blocking layer |
2005-01-01 |
376 |
Light-output enhancement in a nitride-based light-emitting diode with 22 degrees undercut sidewalls |
2005-01-01 |
377 |
Single-mode 1.27-mu m InGaAs : Sb-GaAs-GaAsP quantum well vertical cavity surface emitting lasers |
2005-01-01 |
378 |
Spectrally resolved spontaneous emission patterns of oxide-confined vertical-cavity surface-emitting lasers |
2004-12-01 |
379 |
Fabrication and characteristics of high-speed oxide-confined VCSELs using InGaAsP-InGaP strain-compensated MQWs |
2004-12-01 |
380 |
Improvement of kink characteristics performance of GaAsVCSEL with a indium-tin-oxide top transparent overcoating |
2004-11-15 |
381 |
Simulation of 1300-nm In(0.4)Ga(0.6)As(0.986)N(0.014)/GaAs(1-x)N(x) quantum-well lasers with various GaAs(1-x)N(x) strain compensated barriers |
2004-11-01 |
382 |
Fabrication of GaN-based nanorod light emitting diodes using self-assemble nickel nano-mask and inductively coupled plasma reactive ion etching |
2004-10-25 |
383 |
Investigation of GaN LED with Be-implanted Mg-doped GaN layer |
2004-10-15 |
384 |
Pumping intensity dependent surface charge accumulation and redshifted microphotoluminescence of silicon-implanted quartz |
2004-08-09 |
385 |
10 Gb/s single-mode vertical-cavity surface-emitting laser with large aperture and oxygen implantation |
2004-08-01 |
386 |
High-speed (> 10 Gbps) 850 nm oxide-confined vertical cavity surface emitting lasers (VCSELs) with a planar process and reduced parasitic capacitance |
2004-07-01 |
387 |
As+-implanted AlGaAs oxide-confined VCSEL with enhanced oxidation rate and high performance uniformity |
2004-06-01 |
388 |
Study of GaN light-emitting diodes fabricated by laser lift-off technique |
2004-04-15 |
389 |
Effect of rapid thermal annealing on beryllium implanted p-type GaN |
2004-03-25 |
390 |
Study of dry etching for GaN and InGaN-based laser structure using inductively coupled plasma reactive ion etching |
2004-03-25 |
391 |
High speed performance of 850 nm silicon-implanted AlGaAs/GaAs vertical cavity emitting lasers |
2004-03-01 |
392 |
Comparisons of InP/InGaAlAs and InAlAs/InGaAlAs distributed Bragg reflectors grown by metalorganic chemical vapor deposition |
2004-02-25 |
393 |
MOCVD growth of AlN/GaN DBR structures under various ambient conditions |
2004-02-15 |
394 |
High-speed characteristics of large-area single-transverse-mode vertical-cavity surface-emitting lasers |
2003-10-16 |
395 |
Performance of 850 nm AlGaAs/GaAs implanted VCSELs utilizing silicon implantation induced disordering |
2003-10-01 |
396 |
High-speed modulation of 850 nm InGaAsP/InGaP strain-compensated VCSELs |
2003-07-10 |
397 |
MULTIPLE-INPUTS SYSTOLIC PRIORITY QUEUE FOR FAST SEQUENTIAL-DECODING OF CONVOLUTIONAL-CODES |
1995-10-01 |
398 |
A conceptual framework of bank credit granting system-computer applications in Taiwan |
1995-01-01 |
399 |
SEQUENTIAL-DECODING OF CONVOLUTIONAL-CODES BY A COMPRESSED MULTIPLE QUEUE ALGORITHM |
1994-08-01 |