1. 目前位置：
蘇彬

蘇彬 Su, Pin

電子郵件／E-mail：pinsu@mail.nctu.edu.tw

服務單位／Department：電機學院 ／ 電子工程學系及電子研究所

著作期間／Publish Period：1993 - 2014-10-01

著作統計／Statistics

Article（69）
Books（2）
Patents（3）
Plan（13）
Proceedings Paper（26）
Thesis（23）

Article

序號
No.		 標題
Title		 著作日期
Date
1 Stability and Performance Optimization of Heterochannel Monolithic 3-D SRAM Cells Considering Interlayer Coupling 2014-10-01
2 Built-in Effective Body-Bias Effect in Ultra-Thin-Body Hetero-Channel III-V-on-Insulator n-MOSFETs
 2014-08-01
3 Simulation and Investigation of Random Grain-Boundary-Induced Variabilities for Stackable NAND Flash Using 3-D Voronoi Grain Patterns
 2014-04-01
4 Single-trap-induced random telegraph noise for FinFET, Si/Ge Nanowire FET, Tunnel FET, SRAM and logic circuits
 2014-04-01
5 Investigation of Backgate-Bias Dependence of Threshold-Voltage Sensitivity to Process and Temperature Variations for Ultra-Thin-Body Hetero-Channel MOSFETs
 2014-03-01
6 Comparative Leakage Analysis of GeOI FinFET and Ge Bulk FinFET
 2013-10-01
7 Threshold Voltage Design of UTB SOI SRAM With Improved Stability/Variability for Ultralow Voltage Near Subthreshold Operation
 2013-07-01
8 Analysis of Single-Trap-Induced Random Telegraph Noise and its Interaction With Work Function Variation for Tunnel FET
 2013-06-01
9 Investigation and Comparison of Work Function Variation for FinFET and UTB SOI Devices Using a Voronoi Approach
 2013-04-01
10 Design and Analysis of Robust Tunneling FET SRAM
 2013-03-01
11 Threshold Voltage Design and Performance Assessment of Hetero-Channel SRAM Cells
 2013-01-01
12 Variability Analysis of Sense Amplifier for FinFET Subthreshold SRAM Applications 2012-12-01
13 "Analysis of Single-Trap-Induced Random Telegraph Noise on FinFET Devices, 6T SRAM Cell, and Logic Circuits" 2012-08-01
14 Impact of Quantum Confinement on Backgate-Bias Modulated Threshold-Voltage and Subthreshold Characteristics for Ultra-Thin-Body GeOI MOSFETs
 2012-07-01
15 Independently-Controlled-Gate FinFET Schmitt Trigger Sub-Threshold SRAMs
 2012-07-01
16 A Closed-Form Quantum "Dark Space" Model for Predicting the Electrostatic Integrity of Germanium MOSFETs With High-k Gate Dielectric
 2012-03-01
17 Investigation of Temperature-Dependent High-Frequency Noise Characteristics for Deep-Submicrometer Bulk and SOI MOSFETs
 2012-03-01
18 Impact of Quantum Confinement on Subthreshold Swing and Electrostatic Integrity of Ultra-Thin-Body GeOI and InGaAs-OI n-MOSFETs
 2012-03-01
19 Band-to-Band-Tunneling Leakage Suppression for Ultra-Thin-Body GeOI MOSFETs Using Transistor Stacking
 2012-02-01
20 Enhanced Temperature Dependence of Phonon-Scattering-Limited Mobility in Compressively Uniaxial Strained pMOSFETs
 2011-12-01
21 Analysis of Ultra-Thin-Body SOI Subthreshold SRAM Considering Line-Edge Roughness, Work Function Variation, and Temperature Sensitivity 2011-09-01
22 Investigation of Electrostatic Integrity for Ultrathin-Body Germanium-On-Nothing MOSFET
 2011-03-01
23 Comparison of 4T and 6T FinFET SRAM Cells for Subthreshold Operation Considering Variability-A Model-Based Approach
 2011-03-01
24 FinFET SRAM Cell Optimization Considering Temporal Variability Due to NBTI/PBTI, Surface Orientation and Various Gate Dielectrics
 2011-03-01
25 Investigation of High-Frequency Noise Characteristics in Tensile-Strained nMOSFETs
 2011-03-01
26 Experimental Investigation of Surface-Roughness-Limited Mobility in Uniaxial Strained pMOSFETs
 2011-02-01
27 Impact of Quantum Confinement on Short-Channel Effects for Ultrathin-Body Germanium-on-Insulator MOSFETs
 2011-01-01
28 Impact of Surface Orientation on the Sensitivity of FinFETs to Process Variations-An Assessment Based on the Analytical Solution of the Schrodinger Equation
 2010-12-01
29 Temperature-Dependent RF Small-Signal and Noise Characteristics of SOI Dynamic Threshold Voltage MOSFETs
 2010-09-01
30 Investigation of Cell Stability and Write Ability of FinFET Subthreshold SRAM Using Analytical SNM Model
 2010-06-01
31 Impact of Process-Induced Uniaxial Strain on the Temperature Dependence of Carrier Mobility in Nanoscale pMOSFETs
 2010-05-01
32 Enhanced Carrier-Mobility-Fluctuation Origin Low-Frequency Noise in Uniaxial Strained PMOSFETs
 2010-05-01
33 Comprehensive Noise Characterization and Modeling for 65-nm MOSFETs for Millimeter-Wave Applications
 2010-04-01
34 Investigation and Analysis of Mismatching Properties for Nanoscale Strained MOSFETs
 2010-03-01
35 Investigation of Switching-Time Variations for Nanoscale MOSFETs Using the Effective-Drive-Current Approach
 2010-02-01
36 FinFET SRAM Cell Optimization Considering Temporal Variability due to NBTI/PBTI and Surface Orientation 2010-01-01
37 Independently-Controlled-Gate FinFET Schmitt Trigger Sub-threshold SRAMs 2010-01-01
38 Evaluation of Static Noise Margin and Performance of 6T FinFET SRAM Cells with Asymmetric Gate to Source/Drain Underlap Devices 2010-01-01
39 Analytical Quantum-Confinement Model for Short-Channel Gate-All-Around MOSFETs Under Subthreshold Region
 2009-11-01
40 Investigation of Channel Backscattering Characteristics in Nanoscale Uniaxial-Strained PMOSFETs
 2009-11-01
41 On the Experimental Determination of Channel Backscattering Characteristics-Limitation and Application for the Process Monitoring Purpose
 2009-10-01
42 Static Noise Margin of Ultrathin-Body SOI Subthreshold SRAM Cells-An Assessment Based on Analytical Solutions of Poisson's Equation
 2009-09-01
43 A Comparative Study of Carrier Transport for Overlapped and Nonoverlapped Multiple-Gate SOI MOSFETs
 2009-07-01
44 Impact of Uniaxial Strain on Low-Frequency Noise in Nanoscale PMOSFETs
 2009-06-01
45 Investigation of electrostatic integrity for ultra-thin-body GeOI MOSFET using analytical solution of Poisson's equation
 2009-04-01
46 Single-electron effects in non-overlapped multiple-gate silicon-on-insulator metal-oxide-semiconductor field-effect transistors
 2009-02-11
47 A Comprehensive Investigation of Analog Performance for Uniaxial Strained PMOSFETs
 2009-02-01
48 Series Resistance and Mobility Extraction Method in Nanoscale MOSFETs
 2009-01-01
49 Design and Analysis of Ultra-Thin-Body SOI Based Subthreshold SRAM 2009-01-01
50 Sensitivity of Gate-All-Around Nanowire MOSFETs to Process Variations-A Comparison With Multigate MOSFETs
 2008-11-01
51 Investigation of Coulomb Mobility in Nanoscale Strained PMOSFETs
 2008-09-01
52 Temperature dependence of high frequency noise behaviors for RF MOSFETs
 2008-08-01
53 Impact of process-induced strain on Coulomb scattering mobility in short-channel n-MOSFETs
 2008-07-01
54 Sensitivity of multigate MOSFETs to process variations - An assessment based on analytical solutions of 3-D Poisson's equation
 2008-05-01
55 Investigation of random dopant fluctuation for multi-gate metal-oxide-semiconductor field-effect transistors using analytical solutions of three-dimensional Poisson's equation
 2008-04-01
56 Investigation of anomalous inversion C-V characteristics for long-channel MOSFETs with leaky dielectrics: Mechanisms and reconstruction
 2008-02-01
57 A Comprehensive Study of Single-Electron Effects in Multiple-Gate MOSFETs 2008-01-01
58 On the enhanced impact ionization in uniaxial strained p-MOSFETs
 2007-07-01
59 On the RF extrinsic resistance extraction for partially-depleted SOI MOSFETs
 2007-05-01
60 Investigation of analogue performance for process-induced-strained PMOSFETs
 2007-04-01
61 An assessment of single-electron effects in multiple-gate SOI MOSFETs with 1.6-nm gate oxide near room temperature
 2006-03-01
62 On the prediction of geometry-dependent floating-body effect in SOI MOSFETs
 2005-07-01
63 Modeling geometry-dependent floating-body effect using body-source built-in potential lowering for SOI circuit simulation
 2005-04-01
64 Modeling the floating-body effects of fully depleted, partially depleted, and body-grounded SOI MOSFETs
 2004-06-01
65 Spatial distributions of elastically backscattered electrons from copper and silver
 1999-12-21
66 Monte Carlo calculations of the reflection electron energy loss spectra in gold
 1997-01-07
67 ANGULAR-DISTRIBUTION OF ELECTRONS ELASTICALLY BACKSCATTERED FROM NONCRYSTALLINE SOLID-SURFACES
 1995-10-14
68 DEPENDENCE OF ELECTRON-MOBILITY ON DOPED IMPURITIES
 1995-09-01
69 INFLUENCE OF SURFACE EXCITATIONS ON ELECTRONS ELASTICALLY BACKSCATTERED FROM COPPER AND SILVER SURFACES 1994-12-15

Books

序號
No.		 標題
Title		 著作日期
Date
1 國立交通大學電子工程學系蘇彬教師升等送審著作論文集 2010
2 國立交通大學電子工程系蘇彬教師升等送審資料論文集 2007

Patents

序號
No.		 標題
Title		 著作日期
Date
1 以史密特觸發器為基礎的鰭狀場效電晶體靜態隨機存取記憶體
 2014-10-01
2 獨立閘極控制靜態隨機存取記憶體
 2013-05-01
3 以史密特觸發器為基礎的鰭狀場效電晶體靜態隨機存取記憶體
 2012-02-01

Plan

序號
No.		 標題
Title		 著作日期
Date
1 單石三維整合架構下使用前瞻元件之邏輯以及靜態隨機存取記憶體電路分析 2014
2 單石三維整合架構下使用前瞻元件之邏輯以及靜態隨機存取記憶體電路分析 2013
3 源/汲極串聯電阻引致對高度微縮金氧半元件汲極電流不匹配及變異之反饋效應研究 2012
4 異質通道元件在邏輯電路及記憶體應用之適用性評估 2012
5 異質通道元件在邏輯電路及記憶體應用之適用性評估 2011
6 前瞻矽奈米元件變異性及傳輸特性綜合研究(II)
 2010
7 前瞻矽奈米元件變異性及傳輸特性綜合研究(I)
 2009
8 次32奈米多重閘極元件的特性分析與模式建立---變異性與微縮性，高頻類比特性，以及介觀現象的探討
 2008
9 次50奈米Multiple-Gate SOI CMOS的特性分析與模式建立 2007
10 次50奈米Multiple-Gate SOI CMOS的特性分析與模式建立 2006
11 次100奈米SOI CMOS的RF/Analog特性分析與模式建立(II)
 2005
12 一個用於部分與完全解離絕緣矽電路模擬的統整元件模型---65奈米SOI CMOS基體源極內建能障降低的探討 2004
13 次100奈米SOI CMOS的RF/Analog特性分析與模式建立(I)
 2004

Proceedings Paper

序號
No.		 標題
Title		 著作日期
Date
1 Investigation of Single-Trap-Induced Random Telegraph Noise for Tunnel FET Based Devices, 8T SRAM Cell, and Sense Amplifiers 2013-01-01
2 Device Design and Analysis of Logic Circuits and SRAMs for Germanium FinFETs on SOI and Bulk Substrates 2013-01-01
3 Analysis of Germanium FinFET Logic Circuits and SRAMs with Asymmetric Gate to Source/Drain Underlap Devices 2013-01-01
4 Source/Drain Series Resistance Induced Feedback Effect on Drain Current Mismatch and Its Implication 2013-01-01
5 Design and Optimization of 6T SRAM using Vertically Stacked Nanowire MOSFETs 2013-01-01
6 Impacts of Single Trap Induced Random Telegraph Noise on Si and Ge Nanowire FETs, 6T SRAM Cells and Logic Circuits 2013-01-01
7 Impacts of Random Telegraph Noise on FinFET Devices, 6T SRAM cell, and Logic Circuits 2012-01-01
8 A Comprehensive Comparative Analysis of FinFET and Trigate Device, SRAM and Logic Circuits 2012-01-01
9 Variation Tolerant CLSAs for Nanoscale Bulk-CMOS and FinFET SRAM 2012-01-01
10 Comprehensive Analysis of UTB GeOI Logic Circuits and 6T SRAM Cells considering Variability and Temperature Sensitivity 2011-01-01
11 Self-Heating Induced Feedback Effect on Drain Current Mismatch and Its Modeling 2011-01-01
12 Impacts of Single Trap Induced Random Telegraph Noise on FinFET Devices and SRAM Cell Stability 2011-01-01
13 Radio-Frequency Small-Signal and Noise Modeling for Silicon-on-Insulator Dynamic Threshold Voltage Metal-Oxide-Semiconductor Field-Effect Transistors
 2009-04-01
14 Impact of Uniaxial Strain on Channel Backscattering Characteristics and Drain Current Variation for Nanoscale PMOSFETs 2009-01-01
15 Investigation of Static Noise Margin of Ultra-Thin-Body SOI SRAM Cells in Subthreshold Region using Analytical Solution of Poisson's Equation 2009-01-01
16 Investigation of Low Frequency Noise in Uniaxial Strained PMOSFETs 2009-01-01
17 Temperature Dependences of RF Small-Signal Characteristics for the SOI Dynamic Threshold Voltage MOSFET 2009-01-01
18 Investigation of Static Noise Margin of FinFET SRAM Cells in Sub-threshold Region 2009-01-01
19 Quantum Confinement Effect in Short-Channel Gate-All-Around MOSFETs and Its Impact on the Sensitivity of Threshold Voltage to Process Variations 2009-01-01
20 Investigation of Electrostatic Integrity for Ultra-Thin-Body GeOI MOSFET Using Analytical Solution of Poisson's Equation 2008-01-01
21 Investigation of Channel Backscattering Characteristics for Nanoscale SOI MOSFETs Using a New Temperature-Dependent Method 2008-01-01
22 Investigation of inversion capacitance-voltage reconstruction for metal oxide semiconductor field effect transistors with leaky dielectrics using BSIM4/SPICE and intrinsic input resistance model
 2007-04-01
23 Investigation of scaling for multi-gate MOSFETs using analytical solution of 3-D Poisson's equation 2007-01-01
24 A new series resistance and mobility extraction method by BSIM model for nano-scale MOSFETs 2006-01-01
25 RF extrinsic resistance extraction considering neutral-body effect for partially-depleted SOI MOSFETs 2006-01-01
26 Inversion MOS capacitance extraction for ultra-thin gate oxide using BSIM4 2005-01-01

Thesis

序號
No.		 標題
Title		 著作日期
Date
1 碲化鎘量子點之微波水熱合成 及其在白光發光二極體封裝之應用 2014
2 三五族碎能隙異質接面穿隧式場效電晶體之隨機變易特性的模擬與探討 2014
3 鰭狀、穿隧場效電晶體和異質通道三維積體超薄層元件於超低功耗靜態隨機存取記憶體和邏輯電路之設計與分析 2014
4 薄膜太陽能電池的光捕捉最佳化之模擬研究 2014
5 藉由三維沃爾洛伊圖對於隨機晶格邊界在可堆疊NAND記憶體造成的變異特性之模擬與分析 2013
6 穿隧式場效電晶體與鰭式場效電晶體的隨機變異特性 於類比特性指標之比較及探討 2013
7 三閘極金氧半場效電晶體利用基極偏壓調變臨界電壓 2012
8 藉由沃爾洛伊圖研究與比較鰭狀電晶體和超薄絕緣矽電晶體的功函數變異 2012
9 超薄層矽及鍺通道元件、邏輯電路及靜態隨機存取記憶體之研究與分析 2011
10 先進CMOS元件結構的解析模型建立－量子侷限效應及製程變異敏感度之探討
 2011
11 矽奈米金氧半場效電晶體之汲極電流匹配與低頻雜訊研究及分析 2011
12 量子侷限效應對超薄絕緣鍺與砷化銦鎵金氧半場效電晶體的次臨界與後端閘極偏壓調變臨界電壓特性之理論研究 2011
13 單軸應變矽奈米尺寸金氧半場效電晶體對於載子遷移率之各種散射機制的實驗性研究
 2010
14 先進金氧半場效電晶體考慮溫度相依之高頻小訊號及雜訊特性分析
 2010
15 超薄絕緣鍺金氧半場效電晶體在量子侷限下的短通道效應模型與分析 2010
16 矽奈米線生物感測器之分析與模擬
 2009
17 多重閘極金氧半場效電晶體的本質參數變異特性分析
 2008
18 矽奈米尺寸金氧半場效電晶體的載子傳輸與重要元件參數之實驗性的研究
 2008
19 多重閘極金氧半場效電晶體的變異特性模擬與分析
 2006
20 多重閘極絕緣矽金氧半場效電晶體的微縮分析
 2006
21 單軸應變金氧半電晶體的特性分析 2006
22 對稱與非對稱絕緣矽金氧半場效電晶體之比較研究 2006
23 以蒙地卡羅法探討散射模式對反射電子之影響 1993
電機學院