1. 目前位置：
簡昭欣

簡昭欣 Chien, Chao-Hsin

電子郵件／E-mail：chchien@faculty.nctu.edu.tw

服務單位／Department：其他 ／ 奈米電子與系統研究中心

著作期間／Publish Period：1970-01-01 - 2014-08-01

著作統計／Statistics

Article（139）
Books（2）
Others（2）
Patents（3）
Plan（10）
Proceedings Paper（19）
Thesis（56）

Article

序號
No.		 標題
Title		 著作日期
Date
1 High-Performance Germanium p- and n-MOSFETs With NiGe Source/Drain 2014-08-01
2 A Novel 3D Integration Scheme for Backside Illuminated CMOS Image Sensor Devices
 2014-06-01
3 Highly Transparent, High-Performance IGZO-TFTs Using the Selective Formation of IGZO Source and Drain Electrodes
 2014-06-01
4 Enhancing the Performance of Germanium Channel nMOSFET Using Phosphorus Dopant Segregation
 2014-01-01
5 Body-Tied Germanium Tri-Gate Junctionless PMOSFET With In-Situ Boron Doped Channel
 2014-01-01
6 Effect of Mg Doping on the Electrical Characteristics of High Performance IGZO Thin Film Transistors
 2014-01-01
7 Experimental Demonstration of (111)-Oriented GaAs Metal-Oxide-Semiconductor Field-Effect-Transistors with Hetero-Epitaxial Ge Source/Drain
 2014-01-01
8 Large-Scale Investigation of Human TF-miRNA Relations Based on Coexpression Profiles
 2014-01-01
9 Epitaxial Germanium on SOI Substrate and Its Application of Fabricating High I-ON/I-OFF Ratio Ge FinFETs
 2013-06-01
10 Improving Electrical Properties of Bottom-Gate Poly(3-Hexylthiophene) Thin-Film Transistor Using CF4 Plasma Treatment
 2013-04-01
11 Germanium N and P Multifin Field-Effect Transistors With High-Performance Germanium (Ge) p(+)/n and n(+)/p Heterojunctions Formed on Si Substrate
 2013-04-01
12 Sinter-free transferring of anodized TiO2 nanotube-array onto a flexible and transparent sheet for dye-sensitized solar cells
 2013-02-28
13 High performance InGaZnO thin film transistor with InGaZnO source and drain electrodes
 2013-02-11
14 High On/Off Ratio and Very Low Leakage in p(+)/n and n(+)/p Germanium/Silicon Heterojunction Diodes
 2013-02-01
15 HfO2 nanocrystal memory on SiGe channel
 2013-02-01
16 Body-Tied Germanium FinFETs Directly on a Silicon Substrate
 2012-12-01
17 A study of bulk current mechanism in P3HT-based thin film transistors and approach for current suppression
 2012-11-01
18 Hydrothermal crystallization and modification of surface hydroxyl groups of anodized TiO2 nanotube-arrays for more efficient photoenergy conversion
 2012-09-01
19 A CMOS-Compatible Poly-Si Nanowire Device with Hybrid Sensor/Memory Characteristics for System-on-Chip Applications
 2012-04-01
20 Nanoscale 2-Bit/Cell HfO2 Nanocrystal Flash Memory
 2012-03-01
21 Two-bit/four-level Pr2O3 trapping layer for silicon-oxide-nitride-oxide-silicon-type flash memory
 2012-01-01
22 Enhancing Charge Collection in Dye-Sensitized Solar Cells by Trimming Sidewall of the TiO2 Nanotubes
 2012-01-01
23 Enhanced Performance of Poly(3-hexylthiophenes) Based Thin Film Transistors Using Double-Coated Active Layer
 2012-01-01
24 A Novel Nanoinjection Lithography (NInL) Technology and Its Application for 16-nm Node Device Fabrication
 2011-11-01
25 Identifying transcriptional start sites of human microRNAs based on high-throughput sequencing data
 2011-11-01
26 Functionalized Single-Walled Carbon-Nanotube-Blended P3HT-Based Thin-Film Transistors With Multiwalled Carbon-Nanotube Source and Drain Electrodes
 2011-10-01
27 miRTar: an integrated system for identifying miRNA-target interactions in human
 2011-07-26
28 Self-aligned contact metallization technology for III-V metal-oxide-semiconductor field effect transistors
 2011-05-01
29 Fabrication of High-Sensitivity Polycrystalline Silicon Nanowire Field-Effect Transistor pH Sensor Using Conventional Complementary Metal-Oxide-Semiconductor Technology
 2011-04-01
30 An Investigation of Transient Effects in Poly(3-hexylthiophenes) Based Thin Film Transistors Caused by Oxygen and Water Molecules
 2011-01-01
31 miRTarBase: a database curates experimentally validated microRNA-target interactions
 2011-01-01
32 Switching On Luminescence by the Self-Assembly of a Platinum(II) Complex into Gelating Nanofibers and Electroluminescent Films
 2011-01-01
33 Nickel Silicide Formation using Pulsed Laser Annealing for nMOSFET Performance Improvement
 2011-01-01
34 High-Performance Poly-Si TFTs of Top-Gate with High-kappa Metal-Gate Combine the Laser Annealed Channel and Glass Substrate 2011-01-01
35 The effect of pulsed laser annealing on the nickel silicide formation
 2010-12-01
36 Ge Epitaxial Growth on GaAs Substrates for Application to Ge-Source/Drain GaAs MOSFETs
 2010-01-01
37 A Bipolar Host Material Containing Triphenylamine and Diphenylphosphoryl-Substituted Fluorene Units for Highly Efficient Blue Electrophosphorescence
 2009-09-09
38 Highly Emitting Neutral Dinuclear Rhenium Complexes as Phosphorescent Dopants for Electroluminescent Devices
 2009-08-24
39 Junction and Device Characteristics of Gate-Last Ge p- and n-MOSFETs With ALD-Al(2)O(3) Gate Dielectric 2009-08-01
40 Efficient red electrophosphorescence from a fluorene-based bipolar host material
 2009-08-01
41 Effects of Minority-Carrier Response Behavior on Ge MOS Capacitor Characteristics: Experimental Measurements and Theoretical Simulations
 2009-05-01
42 A new organic/inorganic electroluminescent material with a silsesquioxane core
 2009-04-01
43 Syntheses, Photophysics, and Application of Iridium(III) Phosphorescent Emitters for Highly Efficient, Long-Life Organic Light-Emitting Diodes
 2009-01-01
44 Efficient non-doped blue-light-emitting diodes incorporating an anthracene derivative end-capped with fluorene groups
 2009-01-01
45 Highly efficient red electrophosphorescent device incorporating a bipolar triphenylamine/bisphenylsulfonyl-substituted fluorene hybrid as the host
 2009-01-01
46 The Annihilation of Threading Dislocations in the Germanium Epitaxially Grown within the Silicon Nanoscale Trenches
 2009-01-01
47 Five-element circuit model using linear-regression method to correct the admittance measurement of metal-oxide-semiconductor capacitor
 2009-01-01
48 Effects of HfO(2) buffer layer thickness on the properties of Pt/SrBi(2)Ta(2)O(9)//HfO(2)/Si structure 2008-07-01
49 Polymers derived from 3,6-fluorene and tetraphenylsilane derivatives: Solution-processable host materials for green phosphorescent OLEDs
 2008-06-10
50 Electrophosphorescent polyfluorenes containing osmium complexes in the conjugated backbone
 2008-05-09
51 Electrical properties of low-temperature-compatible p-channel polycrystalline-silicon TFTs using high-kappa gate dielectrics
 2008-04-01
52 Effects of interfacial sulfidization and thermal annealing on the electrical properties of an atomic-layer-deposited Al(2)O(3) gate dielectric on GaAs substrate
 2008-04-01
53 Synthesis of carbon hollow spheres and particles from CCl4 and Mo
 2008-03-31
54 Efficient red-emitting electrophosphorescent polymers
 2008-02-26
55 A solution-processable bipolar molecular glass as a host material for white electrophosphorescent devices
 2008-01-01
56 Characteristics of atomic-layer-deposited Al(2)O(3) high-k dielectric films grown on Ge substrates
 2008-01-01
57 Improved electrical properties of Gd2O3/GaAs capacitor with modified wet-chemical clean and sulfidization procedures
 2008-01-01
58 Properties of Ge films grown through inductively coupled plasma chemical vapor deposition on SiO(2) substrates
 2008-01-01
59 Electrical and material characterization of atomic-layer-deposited Al(2)O(3) gate dielectric on ammonium sulfide treated GaAs substrates
 2008-01-01
60 Cerium oxide nanocrystals for nonvolatile memory applications
 2007-12-24
61 A novel fluorene-triphenylamine hybrid that is a highly efficient host material for blue-, green-, and red-light-emitting electrophosphorescent devices
 2007-11-23
62 Highly efficient non-doped blue-light-emitting diodes based on an anthrancene derivative end-capped with tetraphenylethylene groups
 2007-11-05
63 Improved field emission properties of thiolated multi-wall carbon nanotubes on a flexible carbon cloth substrate
 2007-10-03
64 High-performance and low-temperature-compatible p-channel polycrystalline-silicon TFTs using hafnium-silicate gate dielectric
 2007-10-01
65 Pentacene-based thin-film transistors with multiwalled carbon nanotube source and drain electrodes
 2007-08-20
66 Thickness scaling and reliability comparison for the inter-poly high-kappa dielectrics
 2007-08-01
67 Synthesis and characterization of a polyfluorene containing carbazole and oxadiazole dipolar pendent groups and its application to electroluminescent devices
 2007-07-15
68 White electroluminescence from a single polymer: A blue-emitting polyfluorene incorporating orange-emitting benzoselenadiazole segments on its main chain
 2007-07-15
69 Cross-sectional transmission electron microscopy observations on the Berkovich indentation-induced deformation microstructures in GaN thin films
 2007-07-07
70 Preparation of Mo2C@a-C core-shell powders via carburization of Mo particles by 1-chlorobutane and hexachlorobenzene
 2007-07-01
71 Nonvolatile flash memory devices using CeO2 nanocrystal trapping layer for two-bit per cell applications
 2007-06-01
72 Polyfluorene presenting dipolar pendent groups and its application to electroluminescent devices
 2007-06-01
73 High-speed GaAs metal gate semiconductor field effect transistor structure grown on a composite Ge/Ge(x)Si(1-x)/Si substrate
 2007-04-15
74 Impact of channel dangling bonds on reliability characteristics of flash memory on poly-Si thin films
 2007-04-01
75 Low-temperature polycrystalline silicon thin-film flash memory with hafnium silicate
 2007-03-01
76 Bright-white light-emitting devices based on a single polymer exhibiting simultaneous blue, green, and red emissions
 2007-01-23
77 Comparing the performances of Pentacene based TFTs use MWCNTs and Pd/Ti as source and drain 2007-01-01
78 Ultrathin Si capping layer suppresses charge trapping in HfOxNy/Ge metal-insulator-semiconductor capacitors
 2007-01-01
79 The nanoindentation responses of nickel surfaces with different crystal orientations
 2007-01-01
80 Novel host material for highly efficient blue phosphorescent OLEDs
 2007-01-01
81 Study of thermal stability of HfOxNy/Ge capacitors using postdeposition annealing and NH3 plasma pretreatment
 2007-01-01
82 Two-bit lanthanum oxide trapping layer nonvolatile flash memory
 2007-01-01
83 Properties of Pt/SrBi2Ta2O9/BL/Si MFIS structures containing HfO2, SiO2, and Si3N4 buffer layers 2007-01-01
84 Influence of Ta content on the physical properties of SrBi2Ta2O9 ferroelectric thin films
 2006-12-01
85 Photovoltaic effect on the conductive atomic force microscopic characterization of thin dielectric films
 2006-09-25
86 Dielectric properties of nitric oxide-annealed gate oxides grown on nitrogen-implanted silicon substrates
 2006-08-14
87 Thermochemical reaction of ZrOx(N-y) interfaces on Ge and Si substrates
 2006-07-03
88 RegRNA: an integrated web server for identifying regulatory RNA motifs and elements
 2006-07-01
89 High-performance poly-silicon TFTs using HfO2 gate dielectric
 2006-05-01
90 Novel two-bit HfO2 nanocrystal nonvolatile flash memory
 2006-04-01
91 Tetrahydrofuran activation assisted synthesis of nanosized lithium niobate and lithium tantalate 2006-04-01
92 Effects of postdeposition annealing on the characteristics of HfOxNy dielectrics on germanium and silicon substrates
 2006-01-01
93 Stable organic blue-light-emitting devices prepared from poly[spiro(fluorene-9,9'-xanthene)]
 2005-11-29
94 Suppressing phosphorus diffusion in germanium by carbon incorporation
 2005-11-24
95 Improvements on electrical characteristics of p-channel metal-oxide-semiconductor field effect transistors with HfO(2) gate stacks by post deposition N(2)O plasma treatment 2005-11-01
96 Bis(2,2-diphenylvinyl)spirobifluorene: An efficient and stable blue emitter for electroluminescence applications
 2005-08-15
97 Highly efficient red-electrophosphorescent devices based on polyfluorene copolymers containing charge-transporting pendant units
 2005-07-28
98 Performance and reliability of poly-Si TFTs on FSG buffer layer
 2005-07-01
99 Study of thermal stability of nickel monogermanide on single- and polycrystalline germanium substrates
 2005-06-20
100 Reliability of strained SiGe channel p-channel metal-oxide-semiconductor field-effect transistors with ultra-thin (EOT=3.1nm) N(2)O-annealed SiN gate dielectric 2005-06-01
101 Characteristics of the inter-poly Al(2)O(3) dielectrics on NH(3)-nitrided bottom poly-si for next-generation flash memories 2005-04-01
102 High-perfomance nonvolatile HfO2 nanocrystal memory
 2005-03-01
103 Variations of differential capacitance in SrBi2Ta2O9 ferroelectric films induced by photoperturbation
 2005-02-28
104 Fluorene-based oxadiazoles: thermally stable electron-transporting materials for light-emitting devices
 2005-01-31
105 Low-temperature growth of polycrystalline ge films on SiO2 substrate by HDPCVD 2005-01-01
106 Electrical characteristics of thin HfO(2) gate dielectrics prepared using different pre-deposition surface treatments 2005-01-01
107 Deep sub-micron strained Si0.85Ge0.15 channel p-channel metal-oxide-semiconductor field-effect transistors (pMOSFETs) with ultra-thin N2O-annealed SiN gate dielectric
 2005-01-01
108 Hot-electron-induced electron trapping in 0.13 mu m nMOSFETs with ultrathin (EOT=1.6 nm) nitrided gate oxide 2005-01-01
109 Effects of low-temperature NH3 treatment on the characteristics of HfO2/SiO2 gate stack
 2005-01-01
110 HfO2 MIS capacitor with copper gate electrode
 2004-12-01
111 Efficient sub-nanosecond intracavity optical parametric oscillator pumped with a passively Q-switched Nd : GdVO4 laser
 2004-11-01
112 The characteristics of hole trapping in HfO2/SiO2 gate dielectrics with TiN gate electrode
 2004-10-18
113 Highly efficient red electrophosphorescent devices based on an iridium complex with trifluoromethyl-substituted pyrimidine ligand
 2004-08-30
114 Spirobifluorene-based pyrazoloquinolines: efficient blue electroluminescent materials
 2004-01-01
115 High-performance Pt/SrBi2Ta2O9/HfO2/Si structure for nondestructive readout memory
 2003-09-01
116 High quality Al2O3IPD with NH3 surface nitridation
 2003-08-01
117 Low-pressure crystallization of sol-gel-derived PbZr0.52Ti0.48O3 thin films at low temperature for low-voltage operation
 2003-05-01
118 Enhanced negative substrate bias degradation in nMOSFETs with ultrathin plasma nitrided oxide
 2003-05-01
119 The effects of low-pressure rapid thermal post-annealing on the properties of (Ba,Sr)TiO3 thin films deposited by liquid source misted chemical deposition
 2001-12-01
120 Electrical characteristics of thin cerium oxide film on silicon substrate by reactive DC sputtering 2001-09-01
121 Improved low temperature characteristics of p-channel MOSFETs with Si1-xGex raised source and drain
 2001-08-01
122 Plasma-induced charging damage in ultrathin (3-nm) gate oxides
 2000-07-01
123 Improved ultrathin gate oxide integrity in p(+)-polysilicon-gate p-channel metal oxide semiconductor with medium-dose fluorine implantation 2000-06-01
124 Effects of polysilicon gate doping concentration on plasma charging damage in ultrathin gate oxides 2000-02-01
125 Improved immunity to plasma damage in ultrathin nitrided oxides
 2000-01-01
126 The combined effects of nitrogen implantation at S/D extension and N2O oxide on 0.18 mu m N- and P-metal oxide field effect transistors (MOSFETs)
 1999-12-01
127 Temperature-accelerated dielectric breakdown in ultrathin gate oxides
 1999-06-14
128 Oxide thickness dependence of plasma charging damage
 1999-03-01
129 The effects of shallow germanium halo doping on N-channel metal oxide semiconductor field effect transistors
 1999-01-15
130 Evaluation of plasma charging damage in ultrathin gate oxides
 1998-03-01
131 The role of resist for ultrathin gate oxide degradation during O-2 plasma ashing
 1997-05-01
132 Resist-related damage on ultrathin gate oxide during plasma ashing
 1997-02-01
133 Mechanism of nitrogen coimplant for suppressing boron penetration in p(+)-polycrystalline silicon gate of p metal-oxide semiconductor field effect transistor 1996-09-16
134 Characterization of antenna effect by nondestructive gate current measurement 1996-08-15
135 Off-axial pulse propagation in graded-index materials with Kerr nonlinearity - A variational approach
 1996-07-01
136 Studies on damage removing efficiency of B-11(+) and BF2+ implanted Si0.84Ge0.16 epilayers by rapid thermal annealing 1996-01-08
137 UNSTEADY THERMOSOLUTAL OPPOSING CONVECTION OF A LIQUID WATER MIXTURE IN A SQUARE CAVITY .1. FLOW FORMATION AND HEAT AND MASS-TRANSFER CHARACTERISTICS 1993-03-01
138 Phosphine-Oxide-Containing Bipolar Host Material for Blue Electrophosphorescent Devices
 1970-01-01
139 Multifunctional Deep-Blue Emitter Comprising an Anthracene Core and Terminal Triphenylphosphine Oxide Groups
 1970-01-01

Books

序號
No.		 標題
Title		 著作日期
Date
1 國立交通大學電子工程學系簡昭欣教師升等送審著作論文集 2010
2 國立交通大學電子工程系簡昭欣教師升等送審資料論文集 2007

Others

序號
No.		 標題
Title		 著作日期
Date
1 Reliability of ultrathin gate oxides for ULSI devices
 1999-05-01
2 SPATIOTEMPORAL SOLITARY PULSES IN GRADED-INDEX MATERIALS WITH KERR NONLINEARITY
 1995-08-15

Patents

序號
No.		 標題
Title		 著作日期
Date
1 在矽（110）基板上設有壓縮應變矽鍺通道之N型金氧半電晶體架構
 2008-12-01
2 在矽（110）基板上設有壓縮應變矽鍺通道之N型金氧半電晶體架構
 2007-09-16
3 Architecture of a n-type metal-oxide-semiconductor transistor with a compressive strained silicon-germanium channel fabricated on a silicon (110) substrate
 2007-09-06

Plan

序號
No.		 標題
Title		 著作日期
Date
1 高遷移率鍺與三五族通道磊晶於矽基板上與其應用於次22nm場效電晶體之製作 2014
2 以原子層沉積技術低溫沉積復合阻絕層於二氧化鈦奈米管陣列之高效率、長時間穩定性軟性染料敏化太陽能電池之製作 2013
3 高遷移率鍺與三五族通道磊晶於矽基板上與其應用於次22nm場效電晶體之製作 2013
4 高遷移率鍺與三五族通道磊晶於矽基板上與其應用於次22nm場效電晶體之製作 2012
5 磊晶高品質鍺與砷化銦鎵異質通道於矽基板之高速金氧半場效電晶體 2011
6 磊晶高品質鍺與砷化銦鎵異質通道於矽基板之高速金氧半場效電晶體 2010
7 磊晶高品質鍺與砷化銦鎵異質通道於矽基板之高速金氧半場效電晶體 2009
8 於矽基板製作鍺與III-V化合物異質通道之超高速場效電晶體(I) 2007
9 新式元件結構奈米微晶粒記憶體 2006
10 新式元件結構奈米微晶粒記憶體(I)
 2005

Proceedings Paper

序號
No.		 標題
Title		 著作日期
Date
1 First Experimental Ge CMOS FinFETs Directly on SOI Substrate 2012-01-01
2 Impact of Charge Trapping Effect on Negative Bias Temperature Instability in P-MOSFETs with HfO(2)/SiON Gate Stack
 2008-01-01
3 High charge storage characteristics of CeO2 nanocrystals for novolatile memory applications
 2008-01-01
4 Improvements of ozone surface treatment on the electrical characteristics and reliability in HfO2 gate stacks
 2007-09-01
5 Annealing temperature effect on the performance of nonvolatile HfO2Si-oxide-nitride-oxide-silicon-type flash memory
 2006-05-01
6 An interfacial investigation of high-dielectric constant material hafnium oxide on Si substrate
 2005-09-22
7 Impact of post-deposition-annealing on the electrical characteristics of HfOxNy gate dielectric on Ge substrate
 2005-06-01
8 2-bit poly-Si-TFT nonvolatile memory using hafnium oxide, hafnium silicate and zirconium silicate 2005-01-01
9 High-density MIM capacitors with HfO(2) dielectrics
 2004-12-22
10 High performance multi-bit nonvolatile HfO2 nanocrystal memory using spinodal phase separation of hafnium silicate 2004-01-01
11 Electrical properties of metal-ferroelectric-insulator-semiconductor using sol-gel derived SrBi2Ta2O9 film and ultra-thin Si3N4 buffer layer
 2002-12-02
12 Process-related reliability issues toward sub-100 nm device regime 2002-01-01
13 A study of boron diffusion from selectively grown epitaxial silicon-germanium into silicon during rapid thermal annealing 2002-01-01
14 Improved plasma charging immunity in ultra-thin gate oxide with fluorine and nitrogen implantation
 2000-01-01
15 Breakdown characteristics of ultra-thin gate oxides caused by plasma charging 1999-01-01
16 The role of a resist during O-2 plasma ashing and its impact on the reliability evaluation of ultrathin gate oxides
 1997-07-01
17 Suppression of boron penetration in P+-poly-Si gate metal-oxide-semiconductor transistor using nitrogen implantation
 1997-03-01
18 A model for photoresist-induced charging damage in ultra-thin gate oxides 1997-01-01
19 STABLE 4-DIMENSIONAL SOLITONS IN GRADED-INDEX MATERIALS WITH KERR NONLINEARITY 1994-01-01

Thesis

序號
No.		 標題
Title		 著作日期
Date
1 非平面型三閘極鍺金氧半場效電晶體整合於矽平台 2014
2 高介電材料於鍺基板及異質磊晶鍺元件於矽平台之研究 2014
3 金屬源極與汲極工程對磷化銦金氧半場效電晶體特性影響之研究 2014
4 利用自我對準金屬源極與汲極於砷化銦鎵金氧半場效電晶體之電性與化性的研究 2014
5 氧氣控制、快速熱退火與其他元素摻雜對於銦鎵鋅氧薄膜電晶體的影響 2014
6 利用X光反射量測研究IGZO-TFTs 的O2流量對電性的影響 2013
7 改變TiO2結構對(CH3NH3)PbI3敏化太陽能電池特性影響之研究 2013
8 原子層沉積二氧化鋯/三氧化二鋁於砷化銦鎵金氧半電容之電性與表面化性分析的研究 2013
9 利用蕭特基源極與汲極接面改善鍺通道金氧半場效電晶體之性能 2013
10 在鍺通道金氧半場效電晶體上製造閘極介電層二氧化鋯/鍺堆疊結構之研究 2013
11 利用源極與汲極工程改善鍺通道金氧半場效電晶體之特性 2013
12 聚(3-己基噻吩)薄膜電晶體的摻雜效應與特性強化之研究 2012
13 應用製做在透明基材上二氧化鈦奈米管陣列於染料敏化結構太陽能電池之研究 2012
14 在鍺通道金氧半場效電晶體上去釘札後蕭特基二極體以及n+/p二極體的研究
 2012
15 利用介面鈍化與電漿處理對原子層沉積二氧化鉿/砷化銦金氧半電容之研究
 2012
16 原子層沉積三氧化二鋁介電層於砷化銦鎵金氧半電容之電性與化性的研究
 2012
17 在鍺通道金氧半場效電晶體上使用後沉積氧化製造二氧化鉿/三氧化二鋁/氧化鍺/鍺之閘極介電層堆疊結構的研究
 2012
18 吲哚啉染料運用在多種後處理二氧化鈦奈米管薄膜陣列的染料敏化太陽能電池元件 2012
19 系統化重建人類基因體中微小核醣核酸的調控網路 2011
20 聯吡啶染料在不同酸鹼度水熱法環境處理之二氧化鈦奈米管陣列上的吸附行為與它在染料敏化太陽能電池元件的應用
 2011
21 應用薄管壁二氧化鈦奈米管於準固態電解質之染料敏化太陽能電池 2011
22 高效能增強型砷化鎵金氧半場效電晶體元件
 2011
23 前瞻矽元件製作技術開發與感測器應用之研究
 2010
24 奈米固相磊晶製作碳化矽應變矽場效電晶體之研究 2010
25 研究鍺表面鈍化於未來鍺通道金氧半場效電晶體之效能影響
 2010
26 原子層沉積氧化鋁閘極介電層之砷化鎵通道元件電性研究
 2010
27 電偶極工程與高介電係數阻絕層於氮化矽與奈米微晶粒非揮發性記憶體之研究
 2010
28 矽基板上新穎結構的非揮發性記憶體與互補式金氧半場效電晶體的研究
 2009
29 對於電化學沉積的氧化亞銅/二氧化鈦塊材異質接面特性的研究
 2009
30 氧空缺和雙極電荷層於多晶矽-氧化矽-氮化矽-氧化矽-矽形式非揮發性記憶體的應用
 2009
31 先進材料應用於低溫複晶矽薄膜電晶體和金氧半場效電晶體之研究
 2009
32 注意力引導在動態教學設計之研究-以細胞分裂與減數分裂為例
 2009
33 鍺基板及磊晶鍺通道製作P型金氧半場效電晶體與電性分析研究
 2008
34 在二氧化鉿為基底之高介電係數閘極介電層中的載子捕捉與逃逸的電性行為
 2008
35 探討製程變異於有機電晶體之影響
 2008
36 於鍺基板製作n+-p型二極體及n型金氧半場效電晶體之電性研究
 2008
37 原子層沉積高介電係數氧化鋁閘極介電層之三五族元件電物性研究
 2008
38 先進材料應用於複晶矽薄膜電晶體之研究
 2008
39 高介電係數閘極介電層在金氧半電晶體中之電特性及其可靠度研究
 2008
40 研究半導體和高介電絕緣體之介面以獲得高性能之鍺及三五族金氧半場效電晶體
 2008
41 對染料敏化太陽能電池之結構調整與相應電子行為分析
 2007
42 不同高介電常數材料與奈米微晶粒非揮發性記憶體 2007
43 高介電常數材料作為低溫複晶矽快閃記憶體電荷捕捉層之研究 2007
44 氧化鈰奈米微晶粒非揮發性記憶體元件之研究
 2007
45 利用原子層沉積系統成長氧化鋁閘極介電層於砷化鎵基板之研究
 2006
46 閘極介電層氧化釓於硫鈍化後砷化鎵基板之電物性研究
 2006
47 使用金屬和新穎材料電極之有機薄膜電晶體電性行為與蕭基接面特性之研究
 2006
48 不同高介電常數與傳統低溫介電層應用於低溫複晶矽薄膜電晶體之比較
 2006
49 新穎高介電常數材料與奈米微晶粒非揮發性記憶體之研究
 2005
50 氟摻雜對二氧化鉿堆疊式閘極P型金氧半場效電晶體其可靠性的影響
 2004
51 後沉積之一氧化二氮氣體電漿處理對二氧化鉿堆疊式閘極金氧半場效電晶體電性之影響
 2004
52 氮氧化層及高介電常數介電層在金氧半元件及快閃記憶體上之特性研究
 2004
53 不同前處理對二氧化鉿閘極介電層在電特性的影響
 2003
54 氧化鑭, 氧化鐠及氧化鉿介電層特性之研究
 2003
55 電漿製程產生的天線效應對以超薄氧化層製作的深次微米元件可靠度之影響 1996
56 以有機金屬化學氣相沈積法成長磷化鋁鎵銦及材料應用 1991
其他