國立交通大學機構典藏：研究人員|光電工程學系|盧廷昌

盧廷昌 Lu, Tien-Chang

電子郵件／E-mail：timtclu@mail.nctu.edu.tw

服務單位／Department：電機學院／光電工程學系

著作期間／Publish Period：1970-01-01 - 2015-01-01

著作統計／Statistics

Article（219）

Books（3）

Others（6）

Patents（20）

Plan（17）

Proceedings Paper（85）

Thesis（78）

Article

序號 No.	標題 Title	著作日期 Date
1	Effects of Lattice Types on GaN-Based Photonic Crystal Surface-Emitting Lasers	2015-01-01
2	Lasing on surface states in vertical-cavity surface-emission lasers	2014-10-01
3	Fabrication and characterization of back-side illuminated InGaN/GaN solar cells with periodic via-holes etching and Bragg mirror processes	2014-08-25
4	Design and fabrication of a InGaN vertical-cavity surface-emitting laser with a composition-graded electron-blocking layer	2014-08-01
5	Effect of passivation layers on characteristics of AlGaInP ridge waveguide laser diodes	2014-07-01
6	High density GaN/AlN quantum dots for deep UV LED with high quantum efficiency and temperature stability	2014-06-05
7	Investigating electron depletion effect in amorphous indium-gallium-zinc-oxide thin-film transistor with a floating capping metal by technology computer-aided design simulation and leakage reduction	2014-06-01
8	FDI and Outsourcing in a Service Industry: Welfare Effects of Liberalising Trade and Investment	2014-06-01
9	Fabrication and characteristics of a GaN-based microcavity laser with shallow etched mesa	2014-06-01
10	Single-crystalline silver film grown on Si (100) substrate by using electron-gun evaporation and thermal treatment	2014-05-01
11	High efficiency InGaN/GaN light emitting diodes with asymmetric triangular multiple quantum wells	2014-03-03
12	Suspended GaN-based band-edge type photonic crystal nanobeam cavities	2014-02-10
13	Depth-resolved confocal micro-Raman spectroscopy for characterizing GaN-based light emitting diode structures	2013-11-01
14	Asymmetric design of photonic crystal surface-emitting lasers with low-threshold characteristics	2013-08-10
15	Localized Lasing Mode in GaN Quasi-Periodic Nanopillars at Room Temperature	2013-07-01
16	Study of Nonpolar GaN/ZnO Heterostructures Grown by Molecular Beam Epitaxy	2013-07-01
17	High quality factor nonpolar GaN photonic crystal nanocavities	2013-05-13
18	GaN-based high contrast grating surface-emitting lasers	2013-02-25
19	Optical characterizations and reverse-bias electroluminescence observation for reliability investigations of the InGaN light emitting diode	2013-01-01
20	830-nm AlGaAs-InGaAs Graded Index Double Barrier Separate Confinement Heterostructures Laser Diodes With Improved Temperature and Divergence Characteristics	2013-01-01
21	Characterizing load transfer efficiency in double-walled carbon nanotubes using multiscale finite element modeling	2013-01-01
22	Study of Band-Edge Modes in GaN-Based Photonic Crystal Surface-Emitting Lasers by the Multiple-Scattering Method	2012-11-01
23	Sub-wavelength GaN-based membrane high contrast grating reflectors	2012-08-27
24	Enhanced internal quantum efficiency in graphene/InGaN multiple-quantum-well hybrid structures	2012-08-06
25	High-Temperature Polariton Lasing in a Strongly Coupled ZnO Microcavity	2012-08-01
26	Light Extraction Enhancement of GaN-Based Light-Emitting Diodes Using Crown-Shaped Patterned Sapphire Substrates	2012-07-15
27	Characteristics of Polarized Light Emission in a-Plane GaN-Based Multiple Quantum Wells	2012-07-01
28	Ultraviolet emission efficiency enhancement of a-plane AlGaN/GaN multiple-quantum-wells with increasing quantum well thickness	2012-06-25
29	Design of Low-Threshold Photonic Crystal Surface-Emitting Lasers	2012-05-15
30	Magnitude-tunable sub-THz shear phonons in a non-polar GaN multiple-quantum-well p-i-n diode	2012-05-14
31	Efficiency and Droop Improvement in InGaN/GaN Light-Emitting Diodes by Selective Carrier Distribution Manipulation	2012-04-01
32	Light Output Enhancement of GaN-Based Light-Emitting Diodes by Optimizing SiO2 Nanorod-Array Depth Patterned Sapphire Substrate	2012-04-01
33	A novel randomly textured phosphor structure for highly efficient white light-emitting diodes	2012-03-16
34	The characteristics of the high-K Er2O3 (erbium oxide) dielectrics deposited on polycrystalline silicon	2012-03-01
35	Room temperature polariton lasing vs. photon lasing in a ZnO-based hybrid microcavity	2012-02-27
36	High efficiency GaN-based light-emitting diodes with embedded air voids/SiO(2) nanomasks	2012-02-03
37	Growth and Characteristics of a-Plane GaN on ZnO Heterostructure	2012-01-01
38	The Differences in Optical Characteristics of TiO2 and TiO2/AAO Nanotube Arrays Fabricated by Atomic Layer Deposition	2012-01-01
39	Enhanced Output Power of GaN-Based Resonance Cavity Light-Emitting Diodes With Optimized ITO Design	2011-12-15
40	GaN-based photonic crystal surface emitting lasers with central defects	2011-11-28
41	Characteristics of Current-Injected GaN-Based Vertical-Cavity Surface-Emitting Lasers	2011-11-01
42	Hole transport improvement in InGaN/GaN light-emitting diodes by graded-composition multiple quantum barriers	2011-10-24
43	Investigation of Emission Polarization and Strain in InGaN-GaN Multiple Quantum Wells on Nanorod Epitaxially Lateral Overgrowth Templates	2011-09-15
44	Efficiency and Droop Improvement in GaN-Based High-Voltage Light-Emitting Diodes	2011-08-01
45	Optical Properties of A-Plane InGaN/GaN Multiple Quantum Wells Grown on Nanorod Lateral Overgrowth Templates	2011-08-01
46	High Q microcavity light emitting diodes with buried AlN current apertures	2011-07-25
47	SNOSite: Exploiting Maximal Dependence Decomposition to Identify Cysteine S-Nitrosylation with Substrate Site Specificity	2011-07-15
48	Passivation of yellow luminescence defects in GaN film by annealing and CF(4) plasma treatment	2011-07-01
49	Highly Efficient and Bright LEDs Overgrown on GaN Nanopillar Substrates	2011-07-01
50	Elucidating the Physical Property of the InGaN Nanorod Light-Emitting Diode: Large Tunneling Effect	2011-07-01
51	Room Temperature Current Injection Polariton Light Emitting Diode with a Hybrid Microcavity	2011-07-01
52	Optical and Electrical Properties of GaN-Based Light Emitting Diodes Grown on Micro- and Nano-Scale Patterned Si Substrate	2011-07-01
53	Threshold gain analysis in GaN-based photonic crystal surface emitting lasers	2011-05-15
54	Light Output Enhancement of UV Light-Emitting Diodes With Embedded Distributed Bragg Reflector	2011-05-15
55	Light Output Enhancement of UV Light-Emitting Diodes With Embedded Distributed Bragg Reflector	2011-05-15
56	Tunable Light Emission from GaN-Based Photonic Crystal with Ultraviolet AlN/AlGaN Distributed Bragg Reflector	2011-04-01
57	Broadening of upper polariton branch in GaAs, GaN, and ZnO semiconductor microcavities	2011-04-01
58	Characteristics of exciton-polaritons in ZnO-based hybrid microcavities	2011-02-28
59	Improvement in efficiency droop of GaN-based light-emitting diodes by optimization of active regions	2011-01-01
60	GaN-Based LEDs Grown on HVPE Growth High Crystalline Quality Thick GaN Template	2011-01-01
61	Inverted Octagonal Surface Defects in a-Plane AlGaN/GaN Multiple Quantum Wells	2011-01-01
62	Optical and electrical characterization of reverse bias luminescence in InGaN light emitting diodes	2011-01-01
63	Exciton Localization Behaviors of Basal Stacking Faults in a-Plane AlGaN Alloys	2011-01-01
64	Reduction of Efficiency Droop in Semipolar (1(1)over-bar01) InGaN/GaN Light Emitting Diodes Grown on Patterned Silicon Substrates	2011-01-01
65	Hole injection and efficiency droop improvement in InGaN/GaN light-emitting diodes by band-engineered electron blocking layer	2010-12-27
66	Characteristics of efficiency droop in GaN-based light emitting diodes with an insertion layer between the multiple quantum wells and n-GaN layer	2010-12-20
67	Characterizations of low-temperature electroluminescence from ZnO nanowire light-emitting arrays on the p-GaN layer	2010-12-15
68	Efficiency droop alleviation in InGaN/GaN light-emitting diodes by graded-thickness multiple quantum wells	2010-11-01
69	Abnormal polarization switching phenomenon in a-plane Al(x)Ga(1-x)N	2010-10-11
70	Optical characteristics of a-plane ZnO/Zn(0.8)Mg(0.2)O multiple quantum wells grown by pulsed laser deposition	2010-10-01
71	Characteristics of emission polarization in a-plane nanorods embedded with InGaN/GaN multiple quantum wells	2010-09-15
72	Stable Temperature Characteristics and Suppression of Efficiency Droop in InGaN Green Light-Emitting Diodes Using Pre-TMIn Flow Treatment	2010-09-01
73	Continuous wave operation of current injected GaN vertical cavity surface emitting lasers at room temperature	2010-08-16
74	Highly-directional emission patterns based on near single guided mode extraction from GaN-based ultrathin microcavity light-emitting diodes with photonic crystals	2010-07-05
75	Study of InGaN-GaN Light-Emitting Diodes With Different Last Barrier Thicknesses	2010-06-15
76	Low efficiency droop in blue-green m-plane InGaN/GaN light emitting diodes	2010-06-07
77	Investigation of wavelength-dependent efficiency droop in InGaN light-emitting diodes	2010-03-01
78	Growth and characterization of a-plane Al(x)Ga(1-x)N alloys by metalorganic chemical vapor deposition	2010-03-01
79	Lasing characteristics at different band edges in GaN photonic crystal surface emitting lasers	2010-02-15
80	Temperature-Dependent Electroluminescence Efficiency in Blue InGaN-GaN Light-Emitting Diodes With Different Well Widths	2010-02-15
81	Efficiency Improvement of Single-Junction In(0.5)Ga(0.5)P Solar Cell with Compositional Grading p-Emitter/Window Capping Configuration	2010-01-01
82	Improvement in Crystalline Quality of InGaN-Based Epilayer on Sapphire via Nanoscaled Epitaxial Lateral Overgrowth	2010-01-01
83	Self-Assembled Two-Dimensional Surface Structures for Beam Shaping of GaN-Based Vertical-Injection Light-Emitting Diodes	2010-01-01
84	Low Droop Nonpolar GaN/InGaN Light Emitting Diode Grown on m-Plane GaN Substrate	2010-01-01
85	The Lasing Characteristics of GaN-based Two-dimensional Photonic Crystal Surface Emitting Lasers	2010-01-01
86	High Efficiency InGaP/GaAs Solar Cell with Sub-wavelength Structure on AlInP Window Layer	2010-01-01
87	Observation of Polariton Dispersions for ZnO Microcavities in Strong Couple Regime	2010-01-01
88	Angular-resolved Lasing Characteristics at Different Band Edges in GaN Photonic Crystal Surface Emitting Lasers	2010-01-01
89	Characterization of a-plane green light-emitting diodes using nanorod lateral overgrowth	2010-01-01
90	Investigation of Efficiency Droop in Blue InGaN/GaN Light-Emitting Diodes with Different Well Widths	2010-01-01
91	Internal Quantum Efficiency Measurement in InGaN/GaN UV LEDs with Patterned Sapphire Substrate by Photoluminescence and Electroluminescence Method	2010-01-01
92	Observation of Laser Action from Gallium Nitride nanorods under optical pumping	2010-01-01
93	Photogeneration of coherent shear phonons in orientated wurtzite semiconductors by piezoelectric coupling	2009-11-01
94	Temperature dependent gain characteristics in GaN-based vertical-cavity surface-emitting lasers	2009-10-26
95	Enhanced Light Extraction in Wafer-Bonded AlGaInP-Based Light-Emitting Diodes via Micro- and Nanoscale Surface Textured	2009-10-01
96	Investigating the load transfer efficiency in carbon nanotubes reinforced nanocomposites	2009-09-01
97	Characteristics of a-Plane Green Light-Emitting Diode Grown on r-Plane Sapphire	2009-08-15
98	Efficiency improvement of single-junction InGaP solar cells fabricated by a novel micro-hole array surface texture process	2009-08-12
99	Effect of Controlled Growth Dynamics on the Microstructure of Nonpolar a-Plane GaN Revealed by X-ray Diffraction	2009-07-01
100	Study of the Excitation Power Dependent Internal Quantum Efficiency in InGaN/GaN LEDs Grown on Patterned Sapphire Substrate	2009-07-01
101	Far-Field and Near-Field Distribution of GaN-Based Photonic Crystal LEDs With Guided Mode Extraction	2009-07-01
102	Nanorod epitaxial lateral overgrowth of a-plane GaN with low dislocation density	2009-06-22
103	Extraction Efficiency Enhancement of GaN-Based Light-Emitting Diodes by Microhole Array and Roughened Surface Oxide	2009-05-01
104	Improving Light Output Power of the GaN-Based Vertical-Injection Light-Emitting Diodes by Mg(+) Implanted Current Blocking Layer	2009-05-01
105	Development of GaN-Based Vertical-Cavity Surface-Emitting Lasers	2009-05-01
106	Study of GaN-Based Photonic Crystal Surface-Emitting Lasers (PCSELs) With AlN/GaN Distributed Bragg Reflectors	2009-05-01
107	High output power density from GaN-based two-dimensional nanorod light-emitting diode arrays	2009-04-06
108	Numerical study of optical properties of InGaN multi-quantum-well laser diodes with polarization-matched AlInGaN barrier layers	2009-04-01
109	Optical properties of a-plane InGaN/GaN multiple quantum wells on r-plane sapphire substrates with different indium compositions	2009-03-15
110	Nitride-Based Thin-Film Light-Emitting Diodes With Photonic Quasi-Crystal Surface	2009-03-01
111	Large vacuum Rabi splitting in ZnO-based hybrid microcavities observed at room temperature	2009-02-09
112	A Novel Hot-Electron Programming Method in a Buried Diffusion Bit-Line SONOS Memory by Utilizing Nonequilibrium Charge Transport	2009-02-01
113	Efficiency Enhancement and Beam Shaping of GaN-InGaN Vertical-Injection Light-Emitting Diodes via High-Aspect-Ratio Nanorod Arrays	2009-01-01
114	Output Power Enhancement of Vertical-Injection Ultraviolet Light-Emitting Diodes by GaN-Free and Surface Roughness Structures	2009-01-01
115	Density-dependent energy relaxation of hot electrons in InN epilayers	2009-01-01
116	Improving Performance of InGaN/GaN Light-Emitting Diodes and GaAs Solar Cells Using Luminescent Gold Nanoclusters	2009-01-01
117	Enhancing the Emission Efficiency of In(0.2)Ga(0.8)N/GaN MQW Blue LED by Using Appropriately Misoriented Sapphire Substrates	2009-01-01
118	Carrier localization degree of In(0.2)Ga(0.8)N/GaN multiple quantum wells grown on vicinal sapphire substrates	2009-01-01
119	Blue GaN-based vertical cavity surface emitting lasers by CW current injection at 77K	2009-01-01
120	Numerical study on optimization of InGaN multi-quantum-well laser diodes with polarization-matched AlInGaN barrier layers	2009-01-01
121	Strong Exciton Polariton Dispersion in Multimode GaN Microcavity	2009-01-01
122	Investigation of Composition-Dependent Optical Phonon Modes in Al(x)Ga(1-x)N Epitaxial Layers Grown on Sapphire Substrates	2009-01-01
123	High Light-Extraction Efficiency GaN-Based Vertical Injection LEDs with Surface Nipple Array	2009-01-01
124	Lasing Characteristics of GaN-based Photonic Crystal Surface-Emitting Lasers	2009-01-01
125	High-Performance (Al(x)Ga(1-x))(0.5)In(0.5)P-Based Flip-Chip Light-Emitting Diode With a Geometric Sapphire Shaping Structure	2008-11-01
126	Optical study of a-plane InGaN/GaN multiple quantum wells with different well widths grown by metal-organic chemical vapor deposition	2008-11-01
127	Temperature Coefficient of Poly-Silicon TFT and Its Application on Voltage Reference Circuit With Temperature Compensation in LTPS Process	2008-10-01
128	High quality ultraviolet AlGaN/GaN multiple quantum wells with atomic layer deposition grown AlGaN barriers	2008-09-29
129	Characteristics of GaN-based photonic crystal surface emitting lasers	2008-09-15
130	Thermally Evaporated In2O3 Nanoloquats with Tunable Broad-Band Emissions	2008-09-01
131	Numerical Study on Optimization of Active Layer Structures for GaN/AlGaN Multiple-Quantum-Well Laser Diodes	2008-09-01
132	Nanoscale epitaxial lateral overgrowth of GaN-based light-emitting diodes on a SiO(2) nanorod-array patterned sapphire template	2008-08-25
133	Strain relaxation induced microphotoluminescence characteristics of a single InGaN-based nanopillar fabricated by focused ion beam milling	2008-08-25
134	Fabrication and Characterization of Temperature Insensitive 660-nm Resonant-Cavity LEDs	2008-07-01
135	Broadband and omnidirectional antireflection employing disordered GaN nanopillars	2008-06-09
136	Enhanced light output from a nitride-based power chip of green light-emitting diodes with nano-rough surface using nanoimprint lithography	2008-05-07
137	Nano-processing techniques applied in GaN-Based light-emitting devices with self-assembly Ni nano-masks	2008-05-01
138	Study of GaN-based light-emitting diodes grown on chemical wet-etching-patterned sapphire substrate with V-shaped pits roughening surfaces	2008-05-01
139	Enhanced light extraction of InGaN-based green LEDs by nano-imprinted 2D photonic crystal pattern	2008-05-01
140	Further enhancement of nitride-based near-ultraviolet vertical-injection light-emitting diodes by adopting a roughened mesh-surface	2008-05-01
141	Enhanced vertical extraction efficiency from a thin-film InGaN-GaN light-emitting diode using a 2-D photonic crystal and an omnidirectional reflector	2008-05-01
142	CW lasing of current injection blue GaN-based vertical cavity surface emitting laser	2008-04-07
143	Improvement of light output in GaN-based power chip light-emitting diodes with a nano-rough surface by nanoimprint lithography	2008-04-01
144	Small GaN-based light-emitting diodes with a single electrode pad fabricated on a sapphire substrate	2008-04-01
145	Phase transformation and optical characteristics of porous germanium thin film	2008-03-31
146	Enhancing the light extraction of (AlxGa1-x)(0.5)In0.5P-based light-emitting diode fabricated via geometric sapphire shaping	2008-03-01
147	High-brightness InGaN-GaN flip-chip light-emitting diodes with triple-light scatteriny layers	2008-03-01
148	High brightness GaN-based flip-chip light-emitting diodes by adopting geometric sapphire shaping structure	2008-02-01
149	GaN-based two-dimensional surface-emitting photonic crystal lasers with AlN/GaN distributed Bragg reflector	2008-01-07
150	Effects of built-in polarization and carrier overflow on InGaN quantum-well lasers with electronic blocking layers	2008-01-01
151	Luminance enhancement of flip-chip light-emitting diodes by geometric sapphire shaping structure	2008-01-01
152	Enhancement of light output intensity by integrating ZnO nanorod arrays on GaN-based LLO vertical LEDs	2008-01-01
153	Abnormal PL spectrum in InGaN MQW surface emitting cavity - art. no. 69080L	2008-01-01
154	AlGaN/GaN multiple quantum wells grown by atomic layer deposition - art. no. 68941V	2008-01-01
155	Broad Angular and Spectral Anti-Reflection Employing GaN Nano-Pillar Structures	2008-01-01
156	Optical studies of InN epilayers on Si substrates with different buffer layers	2007-12-01
157	Fabrication of InGaN/GaN nanorod light-emitting diodes with self-assembled Ni metal islands	2007-11-07
158	GaN-based high-Q vertical-cavity light-emitting diodes	2007-10-01
159	Optical properties of In0.3Ga0.7N/GaN green emission nanorods fabricated by plasma etching	2007-08-22
160	Lasing characteristics of a GaN photonic crystal nanocavity light source	2007-07-23
161	Dislocation reduction in GaN grown on stripe patterned r-plane sapphire substrates	2007-07-09
162	Improvement of efficiency and ESD characteristics of ultraviolet light-emitting diodes by inserting AlGaN and SiN buffer layers	2007-07-01
163	Fabrication and characteristics of thin-film InGaN-GaN light-emitting diodes with TiO2/SiO2 omnidirectional reflectors	2007-07-01
164	Enhancement of flip-chip light-emitting diodes with omni-directional reflector and textured micropillar arrays	2007-07-01
165	Fabrication of microcavity light-emitting diodes using highly reflective AlN-GaN and Ta2O5-SiO2 distributed Bragg mirrors	2007-07-01
166	High brightness GaN-based light-emitting diodes	2007-06-01
167	Light-output enhancement of nano-roughened GaN laser lift-off light-emitting diodes formed by ICP dry etching	2007-05-01
168	Optical characteristics of a-plane InGaN/GaN multiple quantum wells with different well widths	2007-04-30
169	Dichromatic InGaN-based white light emitting diodes by using laser lift-off and wafer-bonding schemes	2007-04-16
170	Nano-roughening n-side surface of AlGaInP-based LEDs for increasing extraction efficiency	2007-03-25
171	Study on optimal growth conditions of a-plane GaN grown on r-plane sapphire by metal-organic chemical vapor deposition	2007-03-15
172	High-performance GaN-based vertical-injection light-emitting diodes with TiO2-SiO2 omnidirectional reflector and n-GaN roughness	2007-03-01
173	Lasing actions of octagonal quasi-periodic photonic crystal microcavities	2007-03-01
174	Investigation of InGaN/GaN light emitting diodes with nano-roughened surface by excimer laser etching method	2007-01-25
175	Recent progress on GaN-based vertical cavity surface emitting lasers - art. no. 67660G	2007-01-01
176	Observations on surface morphologies and dislocations of a-plane GaN grown by metal organic chemical vapor deposition	2007-01-01
177	InGaN/GaN nanostripe grown on pattern sapphire by metal organic chemical vapor deposition	2007-01-01
178	Enhancement of InGaN/GaN flip-chip ITO LEDs with incline sidewalls coated with TiO2/SiO2 omnidirectional reflector	2007-01-01
179	Efficiency enhancement of GaN-based power-chip LEDs with sidewall roughness by natural lithography	2007-01-01
180	Trenched epitaxial lateral overgrowth of fast coalesced a-plane GaN with low dislocation density	2006-12-18
181	Effect of oxygen on characteristics of nickel oxide/indium tin oxide heterojunction diodes	2006-12-15
182	Investigation of whispering gallery mode dependence on cavity geometry of quasiperiodic photonic crystal microcavity lasers	2006-12-04
183	High light-extraction GaN-based vertical LEDs with double diffuse surfaces	2006-11-01
184	The carrier blocking effect on 850 nm InAlGaAs/AlGaAs vertical-cavity surface-emitting lasers	2006-10-01
185	ZnO nanopowders fabricated by dc thermal plasma synthesis	2006-09-25
186	Emission characteristics of optically pumped GaN-based vertical-cavity surface-emitting lasers	2006-09-18
187	Enhancement of InGaN-GaN indium-tin-oxide flip-chip light-emitting diodes with TiO2-SiO2 multilayer stack omnidirectional reflector	2006-09-01
188	Design and fabrication of temperature-insensitive InGaP-InGaAlP resonant-cavity light-emitting diodes	2006-07-01
189	Nitride-based LEDs with nano-scale textured sidewalls using natural lithography	2006-06-28
190	Aluminum incorporation into AlGaN grown by low-pressure metal organic vapor phase epitaxy	2006-05-15
191	Whispering gallery mode of modified octagonal quasiperiodic photonic crystal single-defect microcavity and its side-mode reduction	2006-05-15
192	Enhancing the output power of GaN-based LEDs grown on wet-etched patterned sapphire substrates	2006-05-01
193	Experimental and theoretical analysis on ultraviolet 370 nm AlGaInN light-emitting diodes	2006-05-01
194	Room-temperature operation of optically pumped blue-violet GaN-based vertical-cavity surface-emitting lasers fabricated by laser lift-off	2006-04-01
195	InGaN self-assembled quantum dots grown by metal-organic chemical vapour deposition with growth interruption	2006-03-28
196	GaN-based LEDs with Al-deposited V-shaped sapphire facet mirror	2006-03-01
197	The lasing characteristics of GaN-based vertical-cavity surface-emitting laser with AlN-GaN and Ta2O5-SiO2 distributed Bragg reflectors	2006-03-01
198	Crack-free GaN/AlN distributed Bragg reflectors incorporated with GaN/AlN superlattices grown by metalorganic chemical vapor deposition	2006-02-06
199	AlGaInP light-emitting diodes with stripe patterned omni-directional reflector	2006-02-01
200	High brightness AlGaInP-based light emitting diodes by adopting the stripe-patterned omni-directional reflector	2006-02-01
201	Fabrication and characterization of GaN-based LEDs grown on chemical wet-etched patterned sapphire substrates	2006-01-01
202	Effects of different n-electrode patterns on optical characteristics of large-area p-side-down InGaN light-emitting diodes fabricated by laser lift-off	2005-11-01
203	Enhanced light output of an InGaN/GaN light emitting diode with a nano-roughened p-GaN surface	2005-09-01
204	Fabrication and performance of blue GaN-based vertical-cavity surface emitting laser employing AlN/GaN and Ta2O5/SiO2 distributed Bragg reflector	2005-08-22
205	A novel PHINES flash memory cell with low power program/erase, small pitch, two-bits-per-cell for data storage applications	2005-04-01
206	A novel fully CMOS process compatible PREM for SOC applications	2005-03-01
207	Spectrally resolved spontaneous emission patterns of oxide-confined vertical-cavity surface-emitting lasers	2004-12-01
208	A novel erase scheme to suppress overerasure in a scaled 2-bit nitride storage flash memory cell	2004-09-01
209	Lateral migration of trapped holes in a nitride storage flash memory cell and its qualification methodology	2004-09-01
210	Temperature effect on read current in a two-bit nitride-based trapping storage flash EEPROM cell	2004-07-01
211	An endurance evaluation method for flash EEPROM	2004-05-01
212	Comparisons of InP/InGaAlAs and InAlAs/InGaAlAs distributed Bragg reflectors grown by metalorganic chemical vapor deposition	2004-02-25
213	High reflectivity distributed Bragg reflectors for 1.55 mu m VCSELs using InP/airgap	2003-10-01
214	InP/InGaAlAs distributed Bragg reflectors grown by low-pressure metal organic chemical vapor deposition	2003-04-01
215	Real index-guided InGaAlP red lasers with buried tunnel junctions	2002-03-18
216	Characteristics of monolithically integrated two-wavelength laser diodes with aluminum-free active layers	2001-02-12
217	Pollaezek-Khinchin formula for the M/G/1 queue in discrete time with vacations	1997-07-01
218	Stress analysis of the rotational object under the condition of transient state	1996-03-01
219	A parallel Poisson generator using parallel prefix	1996-02-01

Books

序號 No.	標題 Title	著作日期 Date
1	國立交通大學光電工程學系盧廷昌教師升等送審著作論文集	2011
2	半導體雷射導論	2008
3	國立交通大學光電工程學系盧廷昌教師升等送審著作論文集	2008

Others

序號 No.	標題 Title	著作日期 Date
1	Strong light-matter interaction in ZnO microcavities	2013-06-01
2	Growth and Characteristics of a-Plane GaN on ZnO Heterostructure	2013-01-01
3	Reduction of Efficiency Droop in Semipolar (1(1)over-bar01) InGaN/GaN Light Emitting Diodes Grown on Patterned Silicon Substrates (vol 4, 012105, 2011)	2011-03-01
4	High output power density from GaN-based two-dimensional nanorod light-emitting diode arrays (vol 94, 141111, 2009)	2009-05-25
5	Enhancement of flip-chip light-emitting diodes with omni-directional reflector and textured micropillar arrays (vol 19, pg 18, 2007)	2007-09-01
6	"Design of Low-Threshold Photonic Crystal Surface-Emitting Lasers (vol 24, pg 866, 2012)"	1970-01-01

Patents

序號 No.	標題 Title	著作日期 Date
1	具有空氣介質層之半導體光電元件及空氣介質層之製作方法	2014-11-11
2	能帶邊緣型光子晶體雷射二極體	2013-12-11
3	具有奈米條狀結構之發光元件及其製造方法	2013-11-11
4	空気媒質層を有する半導体光学装置の製造方法及び空気媒質層の形成方法（Ａｓｅｍｉｃｏｎｄｕｃｔｏｒｏｐｔｉｃａｌｄｅｖｉｃｅｈａｖｉｎｇａｉｒｍｅｄｉａｌａｙｅｒａｎｄｔｈｅｍｅｔｈｏｄｆｏｒｆｏｒｍｉｎｇｔｈｅａｉｒｍｅｄｉａｌａｙｅｒ）	2013-06-20
5	具有空氣介質層之半導體光電元件及空氣介質層之製作方法	2013-06-16
6	柱状ナノ構造体（ナノロッド）を利用し発光ダイオード（ＬＥＤ）の発光効率を引き上げる方法	2012-09-14
7	半導體發光元件及其製作方法	2011-11-21
8	邊射型高功率雷射二極體結構	2011-08-21
9	一種利用奈米柱狀結構提升發光二極體光輸出效率之方法	2011-04-11
10	能帶邊緣型光子晶體雷射二極體	2011-03-01
11	SURFACE-EMITTING LASER DEVICE	2011-02-24
12	具備透明電極及無裂縫氮化鋁／氮化鎵系列反射鏡之可電激發面射型雷射及其製作方法	2009-07-01
13	邊射型高功率雷射二極體結構	2009-03-16
14	半導體發光元件及其製作方法	2009-02-01
15	LIGHT-EMITTING DEVICE AND METHOD FOR MAKING THE SAME	2009-01-22
16	具有奈米條狀結構之發光元件及其製造方法	2009-01-16
17	Structure of high power edge emission laser diode	2009-01-15
18	柱状ナノ構造体（ナノロッド）を利用し発光ダイオード（ＬＥＤ）の発光効率を引き上げる方法	2008-12-18
19	一種利用奈米柱狀結構提升發光二極體光輸出效率之方法	2008-12-16
20	Method for promoting light emission efficiency of LED using nanorods structure	2008-12-11

Plan

序號 No.	標題 Title	著作日期 Date
1	利用非極性/半極性氮化鎵基板製作氮化鎵垂直共振腔面射型雷射之研究	2014
2	利用非極性/半極性氮化鎵基板製作氮化鎵垂直共振腔面射型雷射之研究	2013
3	具功能性表面微奈米結構砷化鎵氧化侷限垂直共振腔面射型雷射之研究	2013
4	寬能隙半導體微共振腔元件之研究	2013
5	寬能隙半導體微共振腔元件之研究	2012
6	半極性與非極性氮化鎵之寬能隙材料及光電元件研究-子計畫二：半極性或非極性氮化鎵新穎奈米光子元件之研究	2012
7	半極性與非極性氮化鎵之寬能隙材料及光電元件研究-子計畫二：半極性或非極性氮化鎵新穎奈米光子元件之研究	2011
8	寬能隙半導體微共振腔元件之研究	2011
9	利用光子晶體奈米結構製作高效率光子晶體面射型雷射	2010
10	半極性與非極性氮化鎵之寬能隙材料及光電元件研究---子計畫二：半極性或非極性氮化鎵新穎奈米光子元件之研究	2010
11	高發光效率之氮化鎵二維面射型光子晶體分散回饋式雷射	2009
12	成長於非極化氮化鎵之寬能隙材料及光電元件研究---子計畫三：功能性高發光效率氮化鎵發光元件	2009
13	高發光效率之氮化鎵二維面射型光子晶體分散回饋式雷射	2008
14	成長於非極化氮化鎵之寬能隙材料及光電元件研究---子計畫三：功能性高發光效率氮化鎵發光元件	2008
15	成長於非極化氮化鎵之寬能隙材料及光電元件研究---子計畫三：功能性高發光效率氮化鎵發光元件	2007
16	高功率雷射二極體關鍵技術開發計畫	2006
17	高鋁含量氮化鋁鎵/氮化鎵結構磊晶成長與特性之研究	2005

Proceedings Paper

序號 No.	標題 Title	著作日期 Date
1	GaN-based surface-emitting lasers using high contrast grating	2014-01-01
2	Numerical Analysis on Current and Optical Confinement of III-Nitride Vertical-Cavity Surface-Emitting Lasers	2014-01-01
3	Fano resonances GaN-based high contrast grating surface-emitting lasers	2013-01-01
4	Optical Mode Modulation of AlGaInP Multi Quantum Well Laser Diodes	2013-01-01
5	GaN-based microcavity polariton light emitting diodes	2012-01-01
6	Recent advances on CW current injection blue VCSELs	2012-01-01
7	Investigation of emission polarization and strain in InGaN/GaN multiple quantum wells on nanorod epitaxially lateral overgrowth templates	2012-01-01
8	Exciton-polaritons study in ZnO-based hybrid microcavities	2012-01-01
9	Characteristics of an Electrically Pumped GaN-based Microcavity Light Emitter with an AlN Current Blocking Layer	2012-01-01
10	Efficiency and droop improvement in InGaN/GaN light-emitting diodes by selectively carrier-distribution manipulation	2012-01-01
11	Characteristics of GaN-Based Photonic Crystal Surface Emitting Lasers with Central Defects	2012-01-01
12	830nm Graded Index Double Barrier Separate Confinement Heterostructure Laser Diodes with Small Vertical Divergence and Temperature Insensitive Characteristics	2012-01-01
13	Polariton Lasing in a ZnO-based Microcavity up to 353K	2012-01-01
14	Mode Localization in Defect-free GaN-based Bottom-up Photonic Quasicrystal Lasers	2012-01-01
15	Improvement in efficiency droop of GaN-based light-emitting diodes by optimization of active regions	2012-01-01
16	Improvement of quantum efficiency in green light-emitting diodes with pre-TMIn flow treatment	2011-06-08
17	Optical properties of (1 (1)over-bar 0 1) semi-polar InGaN/GaN multiple quantum wells grown on patterned silicon substrates	2011-03-01
18	Study of the internal quantum efficiency of InGaN/GaN UV LEDs on patterned sapphire substrate using the electroluminescence method	2011-01-15
19	A 0.5V 1KS/s 2.5nW 8.52-ENOB 6.8fJ/Conversion-Step SAR ADC for Biomedical Applications	2011-01-01
20	Efficiency droop improvement in GaN-based light-emitting diodes by graded-composition electron blocking layer	2011-01-01
21	Growth of semi-polar GaN-based light-emitting diodes grown on an patterned Si substrate	2011-01-01
22	Abnormal polarization switching phenomenon in a-plane Al(x)Ga(1-x)N	2011-01-01
23	Characteristics of GaN-based Vertical Cavity Surface Emitting Lasers with Hybrid Mirrors	2011-01-01
24	Efficiency Droop Reduction in InGaN/GaN Light-emitting Diodes by Graded-thickness Multiple Quantum Wells	2011-01-01
25	Influence of LT-GaN nucleation layer on the structural and optical properties of MOVPE-grown a-plane GaN	2010-04-01
26	Crystal quality improvement of a-plane GaN using epitaxial lateral overgrowth on nanorods	2010-04-01
27	HRTEM investigation of high-reflectance AlN/GaN distributed Bragg-reflectors by inserting AlN/GaN superlattice	2009-05-01
28	Performance Enhancement of a-Plane Light-Emitting Diodes Using InGaN/GaN Superlattices	2009-04-01
29	Effects of Inhomogeneous Gain and Loss on Nitride-Based Vertical-Cavity Surface Emitting Lasers	2009-04-01
30	Power Enhancement of GaN-Based Flip-Chip Light-Emitting Diodes with Triple Roughened Surfaces	2009-04-01
31	Large Vacuum Rabi Splitting in ZnO-Based Microcavities	2009-01-01
32	Recent Progress in Electrically Pumped Blue GaN-Based VCSELs	2009-01-01
33	Beam Shaping of GaN/InGaN Vertical-Injection Light Emitting Diodes via High-Aspect-Ratio Nanorod Arrays	2009-01-01
34	GaN-based film-transferred light-emitting diodes with photonic crystal	2009-01-01
35	High-reflectivity ultraviolet AlN/AlGaN distributed Bragg reflectors grown by metalorganic chemical vapor deposition	2008-11-15
36	Characteristics of a-plane GaN with the SiN(x) insertion layer grown by metal-organic chemical vapor deposition	2008-11-15
37	Efficiency enhancement of UV/blue light emitting diodes via nanoscaled epitaxial lateral overgrowth of GaN on a SiO(2) nanorod-array patterned sapphire substrate	2008-11-15
38	Lasing Behavior, Gain Property, and Strong Coupling Effects in GaN-Based Vertical-Cavity Surface-Emitting Lasers	2008-08-01
39	Investigation on microstructure in GaN epitaxial growth on the stripe-patterned r-plane sapphire substrates	2008-04-01
40	Tunable light emissions from thermally evaporated In2O3 nanostructures grown at different growth temperatures	2008-04-01
41	Characteristics of ultraviolet nonpolar InGaN/GaN light-emitting diodes using trench epitaxial lateral overgrowth technology	2008-04-01
42	Metal organic chemical vapor deposition growth of GaN-based light emitting diodes with naturally formed nano pyramids	2008-04-01
43	Thermally evaporated In2O3 nanoloquats with oxygen flow-dependent optical emissions	2008-02-15
44	AlGaN/GaN multiple quantum wells grown by using atomic layer deposition technique	2008-01-01
45	Design of Bandgap Voltage Reference Circuit with all TFT Devices on Glass Substrate in a 3-mu m UPS Process	2008-01-01
46	Anisotropy light extraction with high polarization ratio from photonic crystal fight-emitting diodes	2008-01-01
47	AlGaN/GaN Multiple Quantum Wells Grown By Atomic Layer Deposition	2008-01-01
48	Micro-Photoluminescence from a Single InGaN-based Nano-Pillar Fabricated by Focused Ion Beam Milling	2008-01-01
49	Enhanced vertical extraction efficiency from a thin-film InGaN/GaN photonic crystal light-emitting diodes	2008-01-01
50	High Efficiency White LEDs with 2D Photonic Quasi-Crystal and Patterned Sapphire Substrate	2008-01-01
51	Composition Dependence of Infrared Optical Phonon Modes in AlGaN Epilayers Grown on Sapphire Substrates	2008-01-01
52	The Lasing Action of GaN-based Two-Dimensional Surface-emitting Photonic Crystal Lasers	2008-01-01
53	CW Lasing of Current Injection Blue GaN-Based Vertical Cavity Surface Emitting Lasers	2008-01-01
54	Infrared reflectance of optical phonon modes in AlGaN epitaxial layers grown on sapphire substrates - art. no. 68941U	2008-01-01
55	Azimuthal anisotropy of light extraction from photonic crystal light-emitting diodes	2008-01-01
56	Internal quantum efficiency behavior of a-plane and c-plane InGaN/GaN multiple quantum well with different indium compositions	2008-01-01
57	Temperature coefficient of diode-connected LTPS poly-Si TFTs and its application on the bandgap reference circuit	2008-01-01
58	Optically pumped GaN-based vertical cavity surface emitting lasers: Technology and characteristics	2007-08-01
59	Synthesis of In2O3 nanocrystal chains and annealing effect on their optical properties	2007-07-01
60	Hybrid nitride microcavity using crack-free highly reflective AlN/GaN and Ta2O5/SiO2 distributed Bragg mirrors	2007-06-01
61	Strong ultraviolet emission from InGaN/AlGaN multiple quantum well grown by multi-step process	2007-04-01
62	High-performance 650 nm resonant-cavity light-emitting diodes for plastic optical-fiber application	2007-04-01
63	GaN/AlGaN active regions for terahertz quantum cascade lasers grown by low-pressure metal organic vapor deposition	2007-01-01
64	Material and optical properties of trenched epitaxial lateral overgrowth of a-plane GaN	2007-01-01
65	Priority-based EDF scheduling algorithm for real-time service	2007-01-01
66	Ultraviolet Lasing Characteristics of a GaN Photonic Crystal Defect Emitter	2007-01-01
67	Emission Characteristics of InGaN/GaN Vertical-Cavity Surface-Emitting Lasers	2007-01-01
68	High Light-Extraction GaN-based Vertical LEDs With Double Diffuse Surfaces	2007-01-01
69	The Characteristics of a High-Q GaN Micro-cavity Light Emitting Diodes	2007-01-01
70	Characteristics of ultraviolet nonpolar InGaN/GaN light-emitting diodes using trench epitaxial lateral overgrowth technology	2007-01-01
71	Theoretical and experimental analysis of temperature-insensitive 655-nm resonant-cavity LEDs	2007-01-01
72	Optically and electrically pumped GaN-based VCSELs	2007-01-01
73	Observation of strong red photoluminescence with broadband in indium oxynitride nanoparticles	2006-07-01
74	Enhanced light output in InGaN/GaN light emitting diodes with excimer laser etching surfaces	2006-04-01
75	Fabrication and characteristics of GaN-based microcavity light-emitting diodes with high reflectivity AIN/GaN distributed Bragg reflectors	2006-04-01
76	Study of InGaN multiple quantum dots by metal organic chemical vapor deposition	2006-04-01
77	Quaternary AlInGaN multiple quantum well 368 nm light-emitting diode	2006-01-25
78	Effects of growth interruption time on InGaN/GaN quantum dots grown by metal organic chemical vapor deposition - art. no. 612102	2006-01-01
79	Lasing actions of octagonal quasi-periodic photonic crystal micro-cavities	2006-01-01
80	Optically pumped GaN-based vertical cavity surface emitting laser at room temperature	2005-01-01
81	An optically pumped blue GaN-based vertical-cavity surface emitting laser employing AIN/GaN and Ta2O5/NO2 distributed bragg reflectors	2005-01-01
82	MOCVD growth of high-performance InGaAsP/InGaP strain-compensated VCSELs with 850 nm emission wavelength	2004-01-19
83	Investigation of programmed charge lateral spread in a two-bit storage nitride flash memory cell by using a charge pumping technique	2004-01-01
84	A novel soft-program for a narrow erased state Vt distribution, read disturbance suppression and over-program annihilation in multilevel cell flash memories	2003-04-01
85	Temperature dependent near-field emission profiles of oxide-confined vertical cavity surface emitting lasers	2003-01-01

Thesis

序號 No.	標題 Title	著作日期 Date
1	高效率氮化銦鎵發光二極體之主動區結構設計	2014
2	以聚焦離子束製作之氧化鋅奈米薄膜之雷射特性分析	2014
3	以金屬表面電漿侷限之奈米雷射的研究	2014
4	高功率氮化鎵發光二極體結構特性之研究	2014
5	非極性a面氮化鎵缺陷型光子晶體共振腔特性之研究	2013
6	新穎氮化鎵一維光子晶體發光元件研究	2013
7	新穎氮化鎵光子晶體雷射之研究	2013
8	砷化鎵金屬奈米共振腔發光元件研究	2013
9	多邊形AlGaInP紅光發光二極體之研究	2013
10	高功率邊射型與光子晶體面射型雷射二極體之研究	2013
11	磷化鋁鎵銦發光二極體之反射鏡特性研究	2013
12	新穎氮化鎵發光元件磊晶結構之研究	2012
13	探討與改進氮化鎵發光二極體中的效率下降現象	2012
14	CCD數位相機漏光現象之研究與改善	2012
15	氫氣輔助無毒硒化之低缺陷銅銦硒薄膜於太陽能電池應用	2012
16	氮化鎵非極性a面光子晶體高Q值發光元件特性之研究	2012
17	氮化鎵奈微米共振腔發光元件研究	2012
18	有機薄膜電晶體半導體層之圖案化製程	2012
19	以多元件堆疊結構製作具互補吸收材料之有機太陽能電池	2012
20	氮化鎵光子晶體面射型雷射與類光子晶體面射型雷射之研究	2012
21	氮化鎵垂直面射型雷射之電流與光學侷限研究	2012
22	介電質式氮化鎵垂直共振腔面射型雷射之研究	2012
23	覆晶式氮化鎵發光二極體之低溫共晶接合研究	2012
24	成長於不同氮化鎵模板之氮化銦鎵多重量子井之光學特性研究	2012
25	探討奈米複合材料中奈米碳管之力量傳遞	2011
26	氮化鎵微共振腔發光元件研究	2011
27	利用有機金屬化學氣相沉積法在奈米圖型化基板上成長及製作高效率氮化銦鎵系列發光二極體元件	2011
28	濺鍍法氧化銦錫在P型氮化鎵上之研究	2011
29	氮化鎵薄膜奈米結構製作及特性研究	2011
30	光子晶體結構應用於光電元件上之特性研究	2011
31	光子晶體雷射耦合波理論之研究	2011
32	以氮化鋁作為電流阻擋層之氮化鎵微共振腔發光元件以及其光學模態分析之研究	2011
33	新穎氮化鎵一維光子晶體發光元件研究	2011
34	非極性氮化銦鎵/氮化鎵發光二極體的效率改善和特性研究	2010
35	寬能隙材料半導體微共振腔之研究	2010
36	具氮化鎵與氮化鋁布拉格反射鏡之氮化鎵面射型雷射之研究	2010
37	具有局部缺陷氮化鎵二維光子晶體面射型雷射光學特性之研究	2010
38	氧化鋅微共振腔之極化子雷射之研究	2010
39	以濺鍍/無毒硒化製程製作銅銦鎵硒薄膜太陽能電池	2010
40	大面積上發光元件與純刮刀製程有機發光元件之製程改進	2010
41	利用自發脈衝光引起光注入鎖模之二段式邊射型雷射高頻特性研究	2010
42	氮化鎵/氮化鋁奈米結構之光學特性研究	2010
43	氧化鋅微共振腔結構下之激子-極激子雷射之光學特性	2009
44	氮化鎵垂直共振腔面射型雷射之電流侷限研究	2009
45	非極性"a"面氮化銦鎵多重量子井成長在奈米圖樣基板之光學特性研究	2009
46	氮化鎵二維面射型光子晶體雷射閾值增益之研究	2009
47	氮化鎵奈米柱製程與雷射特性之研究	2009
48	利用奈米圖型化基板製作高效率氮化鎵發光二極體	2009
49	利用主動層優化降低氮化鎵發光二極體效率下降特性之研究	2009
50	寬能隙半導體微共振腔強耦合作用之研究	2009
51	覆晶技術及磊晶膜轉移技術應用於氮化鎵發光二極體發光效率提升之研究	2009
52	晶片黏貼技術應用於三/五族化合物半導體元件效率提升之研究	2009
53	不同氧化銦錫結構應用於氮化鎵垂直共振腔面射型雷射之研究	2008
54	奈米矽基高效率薄膜太陽能電池	2008
55	利用非等向性蝕刻氮化鎵與藍寶石基板介面製作高效率紫外光發光二極體	2008
56	氮化鎵面射型雷射與極激子在多模氮化鎵微共振腔內色散的光學特性研究	2008
57	氮化鎵二維光子晶體面射型雷射之雷射行為研究	2008
58	建構側邊鍍金波導管之表面電漿子Fabry-Perot量子點雷射	2008
59	氮化銦鎵/氮化鎵多重量子井發光二極體之特性與內部量子效率研究	2008
60	非極性"a"平面氧化鋅多重量子井結構之光學特性	2008
61	應用奈米柱陣列與十二重準光子晶體之氮化銦鎵垂直式發光二極體	2008
62	非極性氮化鎵光電元件之磊晶成長	2008
63	氮化鎵二維光子晶體面射型雷射光學特性之研究	2007
64	應用光致電化學法製作高效率氮化鎵基發光二極體	2007
65	Numerical Study on Optimization of Active Layer Structures for GaN/AlGaN and InGaN/AlInGaN MQW Laser Diodes	2007
66	具矽量子點超晶格結構之光伏特及光偵測元件	2007
67	含自組裝矽量子點之奈米孔洞氧化矽複合材料閘極之非揮發記憶體	2007
68	量子點面射型雷射動態特性之研究	2007
69	陣列微米孔洞表面糙化製程對於砷化鎵太陽電池效率之影響	2007
70	針對即時傳輸特性之MAC層資源分配方法	2007
71	氮化銦鎵/氮化鎵多重量子井發光二極體之光學特性與內部量子效率研究	2007
72	利用簡單熱氣相沉積法成長之氧化銦奈米結構之相關特性研究	2006
73	不同厚度之非極性"a"平面氮化銦鎵多重量子井結構之光學特性	2006
74	氮化鎵二維面射型光子晶體分散回饋式雷射之研究	2006
75	以表面粗化及藍寶石基板幾何形狀化技術提升氮化鎵覆晶發光二極體之外部量子效率	2006
76	紫外至可見光之奈米結構光偵測器	2006
77	使用量子點雷射減慢光訊息行進速度	2006
78	以金屬有機化學氣相沈積法成長長波長面射型雷射	2003

盧廷昌 Lu, Tien-Chang

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