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林時彥

林時彥 Lin, SHIH-YEN

電子郵件／E-mail：shihyen@gate.sinica.edu.tw

服務單位／Department：電機學院 ／ 光電工程學系

著作期間／Publish Period：1970-01-01 - 2014-08-18

著作統計／Statistics

Article（31）
Proceedings Paper（7）
Thesis（4）

Article

序號
No.		 標題
Title		 著作日期
Date
1 Toward epitaxially grown two-dimensional crystal hetero-structures: Single and double MoS2/graphene hetero-structures by chemical vapor depositions
 2014-08-18
2 The growth mechanisms of graphene directly on sapphire substrates by using the chemical vapor deposition
 2014-06-14
3 Field effect of in-plane gates with different gap sizes on the Fermi level tuning of graphene channels
 2014-05-05
4 Type II GaSb quantum ring solar cells under concentrated sunlight
 2014-03-10
5 Fermi-level shifts in graphene transistors with dual-cut channels scraped by atomic force microscope tips
 2014-01-13
6 Memory device application of wide-channel in-plane gate transistors with type-II GaAsSb-capped InAs quantum dots
 2013-09-30
7 The formation mechanisms and optical characteristics of GaSb quantum rings
 2013-08-07
8 In-Plane Gate Transistors for Photodetector Applications
 2013-06-01
9 Improved 1.3-mu m Electroluminescence of InGaAs-Capped Type-II GaSb/GaAs Quantum Rings at Room Temperature
 2013-01-01
10 Low-temperature grown graphene films by using molecular beam epitaxy
 2012-11-26
11 In-Plane Gate Transistors With a 40-mu m-Wide Channel Width
 2012-08-01
12 Broadband InGaAs-capped InAs/GaAs quantum-dot infrared photodetector with Bi-modal dot height distributions
 2012-08-01
13 Room-Temperature Electro-Luminescence of Type-II GaSb/GaAs Quantum Rings
 2012-07-15
14 Graphitic carbon film formation under Ni templates by radio-frequency sputtering for transparent electrode applications
 2011-11-01
15 Influence of As on the Morphologies and Optical Characteristics of GaSb/GaAs Quantum Dots
 2011-03-01
16 Compact microdisk cavity laser with type-II GaSb/GaAs quantum dots
 2011-01-31
17 In-Plane Gate Transistors Fabricated by Using Atomic Force Microscopy Anode Oxidation
 2010-11-01
18 The fabrication of nanomesas and nanometal contacts by using atomic force microscopy lithography
 2010-11-01
19 Site-controlled self-assembled InAs quantum dots grown on GaAs substrates
 2010-07-23
20 Broadband Quantum-Dot Infrared Photodetector
 2010-07-01
21 Room-temperature operation type-II GaSb/GaAs quantum-dot infrared light-emitting diode
 2010-03-22
22 Wavelength-Tunable InGaAs-Capped Quantum-Dot Infrared Photodetectors
 2010-02-15
23 Voltage-tunable two-color quantum-dot infrared photodetectors
 2009-09-21
24 InGaAs-Capped InAs-GaAs Quantum-Dot Infrared Photodetectors Operating in the Long-Wavelength Infrared Range
 2009-09-15
25 Enhancement of operation temperature of InAs/GaAs quantum-dot infrared photodetectors with hydrogen-plasma treatment
 2009-09-01
26 The influence of In composition on InGaAs-capped InAs/GaAs quantum-dot infrared photodetectors
 2009-09-01
27 Single-Period InAs-GaAs Quantum-Dot Infrared Photodetectors
 2008-09-01
28 Enhanced normal-incident absorption of quantum-dot infrared photodetectors with smaller quantum dots
 2008-07-01
29 Influence of As-stabilized surface on the formation of InAs/GaAs quantum dots
 2008-05-01
30 Influence of thin metal base thickness on the performance of CuPc vertical organic triodes
 2007-04-09
31 Type-II GaSb/GaAs coupled quantum rings: Room-temperature luminescence enhancement and recombination lifetime elongation for device applications
 1970-01-01

Proceedings Paper

序號
No.		 標題
Title		 著作日期
Date
1 Graphene films grown at low substrate temperature and the growth model by using MBE technique
 2013-09-01
2 Temperature-dependent photoluminescence and carrier dynamics of standard and coupled type-II GaSb/GaAs quantum rings
 2013-09-01
3 Long-wavelength electroluminescence of InGaAs-capped type-II GaSb/GaAs quantum-rings at room temperature
 2013-09-01
4 The transition mechanisms of type-II GaSb/GaAs quantum-dot infrared light-emitting diodes
 2011-05-15
5 Wavelength-tunable InGaAs-capped quantum-dot infrared photodetectors for multi-color detection
 2011-05-01
6 Transition mechanism of InAs/GaAs quantum-dot infrared photodetectors with different InAs coverages
 2010-05-01
7 The transition mechanisms of quantum-dot/quantum-well mixed-mode infrared photodetectors
 2009-11-01

Thesis

序號
No.		 標題
Title		 著作日期
Date
1 新穎石墨烯電晶體的製作及其元件特性 2013
2 Graphene Growth on Different Substrates by Using Chemical Vapor Deposition 2013
3 快速準確的微分同構對稱非剛性腦部磁振造影影像對位演算法
 2012
4 大面積石墨烯薄膜的製備及其電晶體電學性質之研究 2011
電機學院