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施敏

施敏 Sze, Simon M.

服務單位／Department：電機學院 ／ 電子工程學系及電子研究所

著作期間／Publish Period：1970 - 2014-09-01

著作統計／Statistics

Article（75）
Books（13）
Others（1）
Patents（2）
Plan（37）
Proceedings Paper（2）
Thesis（40）

Article

序號
No.		 標題
Title		 著作日期
Date
1 Influence of Oxygen Concentration on Self-Compliance RRAM in Indium Oxide Film
 2014-09-01
2 Characterization of Oxygen Accumulation in Indium-Tin-Oxide for Resistance Random Access Memory
 2014-06-01
3 Dual operation characteristics of resistance random access memory in indium-gallium-zinc-oxide thin film transistors
 2014-04-14
4 Investigation of channel width-dependent threshold voltage variation in a-InGaZnO thin-film transistors
 2014-03-31
5 Tri-Resistive Switching Behavior of Hydrogen Induced Resistance Random Access Memory
 2014-02-01
6 Integrated One Diode-One Resistor Architecture in Nanopillar SiOx Resistive Switching Memory by Nanosphere Lithography
 2014-02-01
7 Improvement mechanism of resistance random access memory with supercritical CO2 fluid treatment
 2014-01-01
8 Mechanism of power consumption inhibitive multi-layer Zn:SiO2/SiO2 structure resistance random access memory
 2013-12-21
9 Space electric field concentrated effect for Zr:SiO2 RRAM devices using porous SiO2 buffer layer
 2013-12-11
10 High performance of graphene oxide-doped silicon oxide-based resistance random access memory
 2013-11-21
11 Characteristics of hafnium oxide resistance random access memory with different setting compliance current
 2013-10-14
12 Low power consumption resistance random access memory with Pt/InOx/TiN structure
 2013-09-02
13 Effects of Microwave Annealing on Nitrogenated Amorphous In-Ga-Zn-O Thin-Film Transistor for Low Thermal Budget Process Application
 2013-09-01
14 Electrical conduction mechanism of Zn:SiOx resistance random access memory with supercritical CO2 fluid process
 2013-08-19
15 Enhancement of the stability of resistive switching characteristics by conduction path reconstruction
 2013-07-22
16 Endurance Improvement Technology With Nitrogen Implanted in the Interface of WSiOx Resistance Switching Device
 2013-07-01
17 Insertion of a Si layer to reduce operation current for resistive random access memory applications
 2013-06-24
18 Performance and characteristics of double layer porous silicon oxide resistance random access memory
 2013-06-24
19 The effect of high/low permittivity in bilayer HfO2/BN resistance random access memory
 2013-05-20
20 Hopping Effect of Hydrogen-Doped Silicon Oxide Insert RRAM by Supercritical CO2 Fluid Treatment
 2013-05-01
21 Origin of Hopping Conduction in Graphene-Oxide-Doped Silicon Oxide Resistance Random Access Memory Devices
 2013-05-01
22 Atomic-level quantized reaction of HfOx memristor
 2013-04-29
23 Charge Quantity Influence on Resistance Switching Characteristic During Forming Process
 2013-04-01
24 Low Temperature Improvement Method on Zn:SiOx Resistive Random Access Memory Devices
 2013-04-01
25 Hopping conduction distance dependent activation energy characteristics of Zn:SiO2 resistance random access memory devices
 2013-04-01
26 Characteristics and Mechanisms of Silicon-Oxide-Based Resistance Random Access Memory
 2013-03-01
27 Investigating bipolar resistive switching characteristics in filament type and interface type BON-based resistive switching memory
 2013-02-01
28 Resistive switching characteristics of gallium oxide for nonvolatile memory application
 2013-02-01
29 Influence of molybdenum doping on the switching characteristic in silicon oxide-based resistive switching memory
 2013-01-28
30 Influence of forming process on resistance switching characteristics of In2O3/SiO2 bi-layer
 2013-01-15
31 The resistive switching characteristics in TaON films for nonvolatile memory applications
 2013-01-15
32 Investigation of an anomalous hump in gate current after negative-bias temperature-instability in HfO2/metal gate p-channel metal-oxide-semiconductor field-effect transistors
 2013-01-07
33 Anomalous Gate Current Hump after Dynamic Negative Bias Stress and Negative-Bias Temperature-Instability in p-MOSFETs with HfxZr1-xO2 and HfO2/Metal Gate Stacks
 2013-01-01
34 Analysis of anomalous traps measured by charge pumping technique in HfO2/metal gate n-channel metal-oxide-semiconductor field-effect transistors
 2012-12-03
35 Origin of Hopping Conduction in Sn-Doped Silicon Oxide RRAM With Supercritical CO2 Fluid Treatment
 2012-12-01
36 Bipolar Resistive RAM Characteristics Induced by Nickel Incorporated Into Silicon Oxide Dielectrics for IC Applications
 2012-12-01
37 Influence of Oxygen Concentration on Resistance Switching Characteristics of Gallium Oxide
 2012-10-01
38 Dehydroxyl effect of Sn-doped silicon oxide resistance random access memory with supercritical CO2 fluid treatment
 2012-09-10
39 Asymmetric Carrier Conduction Mechanism by Tip Electric Field in WSiOX Resistance Switching Device
 2012-03-01
40 Silicon introduced effect on resistive switching characteristics of WO(X) thin films 2012-01-09
41 The Effect of Silicon Oxide Based RRAM with Tin Doping 2012-01-01
42 Resistive switching characteristics of ytterbium oxide thin film for nonvolatile memory application
 2011-12-30
43 Reducing operation current of Ni-doped silicon oxide resistance random access memory by supercritical CO(2) fluid treatment 2011-12-26
44 Resistive switching characteristics of Sm(2)O(3) thin films for nonvolatile memory applications 2011-09-01
45 Nitric Acid Oxidized ZrO(2) as the Tunneling Oxide of Cobalt Silicide Nanocrystal Memory Devices 2011-09-01
46 Investigation for coexistence of dual resistive switching characteristics in DyMn(2)O(5) memory devices 2011-08-29
47 Redox Reaction Switching Mechanism in RRAM Device With Pt/CoSiO(X)/TiN Structure 2011-04-01
48 Influence of Oxygen Partial Pressure on Resistance Random Access Memory Characteristics of Indium Gallium Zinc Oxide 2011-01-01
49 Improving Resistance Switching Characteristics with SiGeO(x)/SiGeON Double Layer for Nonvolatile Memory Applications 2011-01-01
50 Influence of Nanocrystals on Resistive Switching Characteristic in Binary Metal Oxides Memory Devices 2011-01-01
51 Formation of the distributed NiSiGe nanocrystals nonvolatile memory formed by rapidly annealing in N(2) and O(2) ambient 2010-10-01
52 Influence of electrode material on the resistive memory switching property of indium gallium zinc oxide thin films
 2010-06-28
53 Charge storage characteristics of high density Mo nanocrystal embedded in silicon oxide and silicon nitride
 2010-02-24
54 High Density Ni Nanocrystals Formed by Coevaporating Ni and SiO(2) Pellets for the Nonvolatile Memory Device Application 2010-01-01
55 Bipolar Resistive Switching Characteristics of Transparent Indium Gallium Zinc Oxide Resistive Random Access Memory 2010-01-01
56 Nitric Acid Oxidation of Si for the Tunneling Oxide Application on CoSi(2) Nanocrystals Nonvolatile Memory 2010-01-01
57 Cobalt nanodots formed by annealing the CoSiO layer for the application of the nonvolatile memory
 2009-03-09
58 NiSiGe nanocrystals for nonvolatile memory devices
 2009-02-09
59 Improved reliability of Mo nanocrystal memory with ammonia plasma treatment
 2009-02-09
60 Charge Storage Characteristics of Mo Nanocrystal Memory Influenced by Ammonia Plasma Treatment
 2009-01-01
61 Improvement of Charge-Storage Characteristics of Mo Nanocrystal Memory by Double-Layer Structure
 2009-01-01
62 Enhancement of NiSi-Based Nanocrystal Formation by Incorporating Ge Elements for Nonvolatile Memory Devices
 2009-01-01
63 Charge storage characteristics of Mo nanocrystal dependence on Mo oxide reduction
 2008-12-01
64 Formation of cobalt-silicide nanocrystals in Ge-doped dielectric layer for the application on nonvolatile memory
 2008-04-14
65 Performance enhancement of excimer laser crystallized poly-Si thin film transistors with fluorine implantation technology
 2008-03-31
66 Formation of Mo silicide nanodot memory by rapid thermal annealing dual electron-gun evaporated Mo-Si layer 2008-01-01
67 Formation and nonvolatile memory effect of nickel-oxygen-silicon nanoparticles
 2007-11-26
68 Formation of Ge nanocrystals using Si1.33Ge0.67O2 and Si2.67Ge1.33N2 film for nonvolatile memory application
 2007-09-03
69 Improved performance of F-ions-implanted poly-Si thin-film transistors using solid phase crystallization and excimer laser crystallization
 2007-03-01
70 Formation of germanium nanocrystals embedded in a silicon-oxygen-nitride layer
 2007-01-01
71 Improved memory window for Ge nanocrystals embedded in SiON layer
 2006-10-16
72 Formation of germanium nanocrystals embedded in silicon-oxygen-nitride layer
 2006-07-31
73 Electrical enhancement of solid phase crystallized poly-Si thin-film transistors with fluorine ion implantation
 2006-01-01
74 A fabrication of germanium nanocrystal embedded in silicon-oxygen-nitride layer 2006-01-01
75 Analysis of an anomalous hump in gate current after dynamic negative bias stress in HfxZr1-xO2/metal gate p-channel metal-oxide-semiconductor field-effect transistors
 1970-01-01

Books

序號
No.		 標題
Title		 著作日期
Date
1 半導體元件物理與製作技術 2013
2 半導體元件物理與製作技術 2013
3 半導體元件物理學 第三版（下冊） 2009
4 半導體元件物理學 2009
5 半導體元件物理學 第三版（上冊） 2008
6 半導體元件物理學 2008
7 半導體製程概論 2008
8 半導體製程概論 2006
9 半導體製程概論 2005
10 半導體元件物理與製作技術 2002
11 半導體元件物理與製作技術 1996
12 半導體器件 : 物理與工藝 1992
13 超大規模集成電路技術 1987

Others

序號
No.		 標題
Title		 著作日期
Date
1 The Effect of Silicon Oxide Based RRAM with Tin Doping (vol 15, pg H65, 2012)
 2012-01-01

Patents

序號
No.		 標題
Title		 著作日期
Date
1 一種形成鍺半導體表面保護層的方法
 2013-10-21
2 一種形成鍺半導體表面保護層的方法
 2012-03-01

Plan

序號
No.		 標題
Title		 著作日期
Date
1 前瞻電阻式記憶體元件之新結構與新應用研究( I ) 2014
2 前瞻新結構電阻式記憶體元件之製作(2/2) 2013
3 電阻式記憶體新穎材料之開發與機制研究(2/2) 2013
4 前瞻新結構電阻式記憶體元件之製作( I ) 2012
5 電阻式記憶體新穎材料之開發與機制研究( I ) 2012
6 具奈米點之電阻式記憶體元件製作與物理機制研究 2011
7 新穎性變阻式記憶體(RRAM)製作及其電性機制研究 2011
8 具奈米點之電阻式記憶體元件製作與物理機制研究 2010
9 新穎性變阻式記憶體(RRAM)製作及其電性機制研究 2010
10 高介電材料結合SONOS 之新穎非揮發性記憶體元件製作與物理特性研究(II)
 2009
11 奈米點記憶體元件之製作與物理機制研究(II)
 2009
12 奈米點記憶體元件之製作與物理機制研究(I) 2008
13 高介電材料結合SONOS 之新穎非揮發性記憶體元件製作與物理特性研究(I) 2008
14 Nano-Dots Application of Nonvolatile Memory and Light-Emitting Device on Silicon 2007
15 新穎SONOS非揮發性記憶體元件製作與特性研究 2007
16 新穎SONOS非揮發性記憶體元件製作與特性研究 2006
17 奈米點在非揮發性記憶體及矽半導體發光元件之研究 2006
18 X-Ray及電子束(E-Beam)直接微影技術在多層導體連線上的應用研究(II)
 2005
19 超臨界CO2流體技術在極低介電常數材料與Cu導線製程整合之應用研究
 2005
20 X-Ray及電子束(E-Beam)直接微影技術在多層導體連線上的應用研究(I)
 2004
21 具有低介電常數阻障介電薄膜製程整合之研究(II)
 2003
22 極低介電常數材料(k<2.2)與銅製程在超大型積體電路上之應用研究(II)
 2003
23 具有低介電常數阻障介電薄膜製程整合之研究(I)
 2002
24 極低介電常數材料(k<2.2)與銅製程在超大型積體電路上之應用研究(I)
 2002
25 國家奈米元件實驗室南區辦公室支援南部學界微機電系統研發
 2002
26 低介電常數材料與銅製程整合之研究(II)
 2001
27 毫微米元件實驗室南區人才培訓及技術服務中心籌備計畫 2001
28 低介電常數材料應用在超大型積體電路上之研究(II)
 2001
29 低介電常數材料應用在超大型積體電路上之研究(I) 2000
30 低介電常數材料與銅製程整合之研究(I) 2000
31 化學機械研磨在氧化鋁及氮化鎵上的應用研究
 2000
32 氫化物氣相磊晶之側向蔓延磊晶技術之研究
 1999
33 以HVPE成長之氮化鎵單晶基板的攙雜研究
 1998
34 矽與矽鍺材料及元件之發展---子計畫一：矽與矽鍺材料及物理特性研究 1997
35 毫微米SOI技術 1995
36 三五族半導體選擇性區域成長在元件上的應用 1995
37 三五族半導體選擇性區域成長之研究 1994

Proceedings Paper

序號
No.		 標題
Title		 著作日期
Date
1 Effect of Top Electrode Material on Resistive Switching Characteristics in MnO2 Nonvolatile Memory Devices
 2011-01-01
2 Fabrication of pattern-depended metal induced lateral crystallization polysilicon thin film transistors with NH3 plasma passivation effects 2005-01-01

Thesis

序號
No.		 標題
Title		 著作日期
Date
1 非晶態氮摻雜氧化銦鎵鋅薄膜電晶體特性之研究 2014
2 高效能銦鋅錫氧化物薄膜電晶體元件開發與研究 2014
3 高功率氮化鋁鎵/氮化鎵高電子遷移率電晶體之金屬接觸製程研究 2013
4 三五族量子井金屬氧化物半導體場效電晶體相關於晶向在低功率高頻的應用 2013
5 前瞻銦鎵鋅氧薄膜電晶體應用於閘極驅動陣列基板技術之自我加熱效應物理機制研究 2013
6 氮化鋁鎵/氮化鎵高電子遷移率電晶體之銅金屬化製程研究 2011
7 Hf1-xZrXO2/Metal Gate之P型金氧半場效電晶體電性分析與施加動態正負偏壓劣化研究 2011
8 電阻式記憶體在二氧化矽基底的薄膜上之開關機制的研究 2011
9 銦鎵摻雜之非晶態氧化鋅薄膜電晶體在環境與照光偏壓下穩定度之研究
 2010
10 新穎材料DyMn2O5 在電阻式記憶體上的機制研究與應用
 2010
11 氮氧化鉭薄膜於電阻式記憶體的製作與轉態特性之研究
 2010
12 二氧化錳與氧化鋁應用於電阻式轉態記憶體之特性研究與電性分析 2009
13 氧化鉺薄膜於電阻式記憶體的製作與轉態特性之研究
 2009
14 五十奈米線寬薄膜型SANOS快閃記憶體的製作與特性分析 2009
15 鈦奈米晶體應用於非揮發性記憶體
 2008
16 鉬奈米點在非揮發性記憶體應用之研究
 2007
17 多層閘極介電層之奈米尺度薄膜電晶體之研究
 2005
18 多重通道及多重閘極的金屬誘化側向結晶之複晶矽薄膜電晶體的製作與特性分析
 2004
19 多重奈米通道複晶矽薄膜電晶體之製造與特性研究
 2003
20 前瞻非揮發性記憶體元件之研究
 2003
21 選擇性沉積鎢汲極源極複晶矽薄膜電晶體之製作與研究 2001
22 多孔性低介電常數材料之製程整合研究 2000
23 複晶矽薄膜及其電晶體之研究 2000
24 半導體元件及奈米結構電腦模擬計算方法發展之研究 2000
25 低介電常數材料及其後續處理在多層導體連線技術上的應用 1999
26 低介電常數材料在積體電路上之應用研究 1999
27 低介電常數材料MSQ之製程整合 1999
28 study of indium super-steep-retrograde for deep submicron nMOSFET 1999
29 低介電常數材料（HSQ）之特性探討 1999
30 以不同的製程處理所製作之鈦酸鍶鋇薄膜之特性 1998
31 表面通道P型金氧半場效電晶體中以新閘極製程抑制硼穿透效應之研究 1998
32 超薄閘極氧化層之P型金氧半電晶體中硼穿透暨電漿充電損害效應之研究 1998
33 以電漿沈積法成長摻雜氟之低介電常數二氧化矽應用於內層介電材料之特性研究 1995
34 深次微米SOI元件相關特性之研究 1995
35 Delta 摻雜磷化銦鎵/砷化銦鎵/砷化鎵調變摻雜場效電晶體之研究 1995
36 STUDY OF THE DELTA-DOPED InGaP╱InGaAs╱GaAs PSEUDOMORPHIC MODULATION DOPED FIELD-EFFECT TRANSISTORS 1995
37 深次微米SOI元件相關特性之研究 1995
38 高效率之砷化鎵及砂衝渡二極體之設計及製造 1975
39 BARITT結構的靜態與微波特性 1972
40 金屬半導體介面之研究 1970
電機學院