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張俊彥

張俊彥 Chang, Chun-Yen

電子郵件／E-mail：cyc@cc.nctu.edu.tw

服務單位／Department：電機學院 ／ 電子工程學系及電子研究所

著作期間／Publish Period：1965 - 2014-11-07

著作統計／Statistics

Article（523）
Books（5）
Others（19）
Patents（30）
Plan（64）
Proceedings Paper（137）
Thesis（219）

Article

序號
No.		 標題
Title		 著作日期
Date
1 A fluorescence turn-on probe for cysteine and homocysteine based on thiol-triggered benzothiazolidine ring formation 2014-11-07
2 High Mobility Field-Effect Thin Film Transistor Using Room-Temperature High-kappa Gate Dielectrics 2014-10-01
3 Efficiency improvement of GaN-based ultraviolet light-emitting diodes with reactive plasma deposited AlN nucleation layer on patterned sapphire substrate
 2014-09-16
4 Amorphous bilayer TiO2-InGaZnO thin film transistors with low drive voltage
 2014-09-01
5 An Oxygen Gettering Scheme for Improving Device Mobility and Subthreshold Swing of InGaZnO-Based Thin-Film Transistor
 2014-09-01
6 Effect of the Circle-Grid Electrodes on Concentrated GaAs Solar Cell Efficiency 2014-09-01
7 Performance enhancement of GaN-based flip-chip ultraviolet light-emitting diodes with a RPD AlN nucleation layer on patterned sapphire substrate
 2014-08-01
8 Observation of the high-sensitivity plasmonic dipolar antibonding mode of gold nanoantennas in evanescent waves
 2014-07-21
9 Increased risk of major depression subsequent to a first-attack and non-infection caused urticaria in adolescence: a nationwide population-based study
 2014-07-11
10 Enhanced Performance of Organic Thin Film Solar Cells Using Electrodes with Nanoimprinted Light-Diffraction and Light-Diffusion Structures
 2014-05-14
11 High-Efficiency and Crack-Free InGaN-Based LEDs on a 6-inch Si (111) Substrate With a Composite Buffer Layer Structure and Quaternary Superlattices Electron-Blocking Layers
 2014-05-01
12 Highly Efficient Polymer Tandem Cells and Semitransparent Cells for Solar Energy
 2014-05-01
13 Dark current suppression of amorphous selenium based photosensors by the ZnO hole blocking layer
 2014-05-01
14 Association of Interleukin-16 Polymorphisms with Graves' Disease in a Taiwanese Population
 2014-04-30
15 Natural substrate lift-off technique for vertical light-emitting diodes
 2014-04-01
16 Increased Risk of Major Depression in the Three Years following a Femoral Neck Fracture-A National Population-Based Follow-Up Study
 2014-03-13
17 Structural stability of diffusion barriers in thermoelectric SbTe: From first-principles calculations to experimental results
 2014-03-05
18 High efficiency InGaN/GaN light emitting diodes with asymmetric triangular multiple quantum wells
 2014-03-03
19 Improvement of emission uniformity by using micro-cone patterned PDMS film
 2014-02-24
20 Dependence of the Noise Behavior on the Drain Current for Thin Film Transistors
 2014-02-01
21 An efficient synthesis of the C27-C45 fragment of lagunamide A, a cyclodepsipeptide with potent cytotoxic and antimalarial properties
 2014-01-31
22 Resonant modes of 12-fold symmetric defect free photonic quasicrystal
 2014-01-27
23 Realization of Metal-Insulator Transition and Oxidation in Silver Nanowire Percolating Networks by Terahertz Reflection Spectroscopy
 2014-01-08
24 High Mobility Bilayer Metal-Oxide Thin Film Transistors Using Titanium-Doped InGaZnO
 2014-01-01
25 The Time Response of the On-Current for the Amorphous In-Ga-Zn-O Thin Film Transistor to the Illumination Pulse
 2014-01-01
26 Frequency measurement of the 6P(3/2) -> 7S(1/2) transition of thallium 2013-12-30
27 Room temperature ultraviolet GaN metal-coated nanorod laser
 2013-11-04
28 Fully room-temperature IGZO thin film transistors adopting stacked gate dielectrics on flexible polycarbonate substrate
 2013-11-01
29 Fluorescence Intrinsic Characterization of Excitation-Emission Matrix Using Multi-Dimensional Ensemble Empirical Mode Decomposition
 2013-11-01
30 Depth-resolved confocal micro-Raman spectroscopy for characterizing GaN-based light emitting diode structures
 2013-11-01
31 Electrically driven green, olivine, and amber color nanopyramid light emitting diodes
 2013-10-07
32 The Post-Resuscitative Urinalysis Associate the Survival of Patients with Non-Traumatic Out-of-Hospital Cardiac Arrest
 2013-10-04
33 A Versatile Fluoro-Containing Low-Bandgap Polymer for Efficient Semitransparent and Tandem Polymer Solar Cells
 2013-10-01
34 Temperature-dependent characteristics of junctionless bulk transistor
 2013-09-23
35 High voltage characteristics of junctionless poly-silicon thin film transistors
 2013-09-16
36 High performance IGZO/TiO2 thin film transistors using Y2O3 buffer layers on polycarbonate substrate
 2013-09-01
37 Room-temperature flexible thin film transistor with high mobility
 2013-09-01
38 Coherent phonon manipulation in coupled mechanical resonators 2013-08-01
39 Investigation of Characteristics of Al2O3/n-In (x) Ga1-x As (x=0.53, 0.7, and 1) Metal-Oxide-Semiconductor Structures
 2013-08-01
40 Fabrication, characterization and simulation of Omega-gate twin poly-Si FinFET nonvolatile memory
 2013-07-22
41 Absolute frequency measurements of the molecular iodine hyperfine transitions at 535 nm
 2013-07-01
42 Characteristics of Gate-All-Around Junctionless Poly-Si TFTs With an Ultrathin Channel
 2013-07-01
43 Study of Nonpolar GaN/ZnO Heterostructures Grown by Molecular Beam Epitaxy 2013-07-01
44 Formation of Nanostructured Fullerene Interlayer through Accelerated Self-Assembly and Cross-Linking of Trichlorosilane Moieties Leading to Enhanced Efficiency of Photovoltaic Cells
 2013-06-25
45 A Flexible IGZO Thin-Film Transistor With Stacked TiO2-Based Dielectrics Fabricated at Room Temperature
 2013-06-01
46 Device and Circuit Performance Estimation of Junctionless Bulk FinFETs
 2013-06-01
47 Improving Breakdown Voltage of LDMOS Using a Novel Cost Effective Design
 2013-05-01
48 Flexible InGaZnO thin film transistors using stacked Y2O3/TiO2/Y2O3 gate dielectrics grown at room temperature 2013-04-01
49 A New sp2-sp2 Dialkylethylene-Bridged Heptacyclic Ladder-Type Arene for High Efficiency Polymer Solar Cells 2013-04-01
50 Parallel Screening of Wild-Type and Drug-Resistant Targets for Anti-Resistance Neuraminidase Inhibitors
 2013-02-20
51 Characteristic of p-Type Junctionless Gate-All-Around Nanowire Transistor and Sensitivity Analysis
 2013-02-01
52 Performance Comparison Between Bulk and SOI Junctionless Transistors
 2013-02-01
53 A 2-bit/Cell Gate-All-Around Flash Memory of Self-Assembled Silicon Nanocrystals
 2013-02-01
54 Cost-Effective and Self-Textured Gallium-Doped Zinc Oxide Front Contacts for Hydrogenated Amorphous Silicon Thin-Film Solar Cells
 2013-02-01
55 Synthesis of a New Ladder-Type Benzodi(cyclopentadithiophene) Arene with Forced Planarization Leading to an Enhanced Efficiency of Organic Photovoltaics
 2012-10-23
56 Enhanced internal quantum efficiency in graphene/InGaN multiple-quantum-well hybrid structures
 2012-08-06
57 Light Extraction Enhancement of GaN-Based Light-Emitting Diodes Using Crown-Shaped Patterned Sapphire Substrates
 2012-07-15
58 Characteristics of Polarized Light Emission in a-Plane GaN-Based Multiple Quantum Wells
 2012-07-01
59 Fabrication and luminescent properties of core-shell InGaN/GaN multiple quantum wells on GaN nanopillars
 2012-06-25
60 Ultraviolet emission efficiency enhancement of a-plane AlGaN/GaN multiple-quantum-wells with increasing quantum well thickness
 2012-06-25
61 Lasing action in gallium nitride quasicrystal nanorod arrays
 2012-05-21
62 Somatic LMCD1 mutations promoted cell migration and tumor metastasis in hepatocellular carcinoma
 2012-05-01
63 Dithienocarbazole-Based Ladder-Type Heptacyclic Arenes with Silicon, Carbon, and Nitrogen Bridges: Synthesis, Molecular Properties, Field-Effect Transistors, and Photovoltaic Applications
 2012-04-24
64 High-Reliability Trigate Poly-Si Channel Flash Memory Cell With Si-Nanocrystal Embedded Charge-Trapping Layer
 2012-04-01
65 7,7 ''-Dimethoxyagastisflavone-induced Apoptotic or Autophagic Cell Death in Different Cancer Cells
 2012-04-01
66 Efficiency and Droop Improvement in InGaN/GaN Light-Emitting Diodes by Selective Carrier Distribution Manipulation
 2012-04-01
67 Large Area of Ultraviolet GaN-Based Photonic Quasicrystal Laser
 2012-04-01
68 Light Output Enhancement of GaN-Based Light-Emitting Diodes by Optimizing SiO2 Nanorod-Array Depth Patterned Sapphire Substrate
 2012-04-01
69 A Novel Cost Effective Double Reduced Surface Field Laterally Diffused Metal Oxide Semiconductor Design for Improving Off-State Breakdown Voltage
 2012-04-01
70 Wideband high-isolation and perfect-balance microstrip rat-race coupler
 2012-03-29
71 Electrically driven nanopyramid green light emitting diode
 2012-02-06
72 High efficiency GaN-based light-emitting diodes with embedded air voids/SiO(2) nanomasks 2012-02-03
73 BPR1J-097, a novel FLT3 kinase inhibitor, exerts potent inhibitory activity against AML
 2012-01-31
74 Combination of Molecular, Morphological, and Interfacial Engineering to Achieve Highly Efficient and Stable Plastic Solar Cells
 2012-01-24
75 Growth and Characteristics of a-Plane GaN on ZnO Heterostructure
 2012-01-01
76 A High-throughput Cell-based Screening for L858R/T790M Mutant Epidermal Growth Factor Receptor Inhibitors 2012-01-01
77 Diindenothieno[2,3-b]thiophene arene for efficient organic photovoltaics with an extra high open-circuit voltage of 1.14 ev
 2012-01-01
78 High Improvement in Conversion Efficiency of mu c-SiGe Thin-Film Solar Cells with Field-Enhancement Layers
 2012-01-01
79 Double-Pattern Textured ZnO:Ga Thin Films Fabricated by an APPJ and an DC Sputtering
 2012-01-01
80 Ladder-Type Nonacyclic Structure Consisting of Alternate Thiophene and Benzene Units for Efficient Conventional and Inverted Organic Photovoltaics
 2011-11-22
81 Improved Performance of InGaN/GaN Light-Emitting Diodes With Thin Intermediate Barriers
 2011-11-15
82 Donor-Acceptor Random Copolymers Based on a Ladder-Type Nonacyclic Unit: Synthesis, Characterization, and Photovoltaic Applications
 2011-11-08
83 Characteristics of Current-Injected GaN-Based Vertical-Cavity Surface-Emitting Lasers
 2011-11-01
84 Hole transport improvement in InGaN/GaN light-emitting diodes by graded-composition multiple quantum barriers
 2011-10-24
85 Study of InGaN-Based Light-Emitting Diodes on a Roughened Backside GaN Substrate by a Chemical Wet-Etching Process
 2011-10-01
86 Investigation of Emission Polarization and Strain in InGaN-GaN Multiple Quantum Wells on Nanorod Epitaxially Lateral Overgrowth Templates
 2011-09-15
87 Di(4-methylphenyl)methano-C(60) Bis-Adduct for Efficient and Stable Organic Photovoltaics with Enhanced Open-Circuit Voltage 2011-09-13
88 Formation and composition of titanium oxinitride nanocrystals synthesized via nitridizing titanium oxide for nonvolatile memory applications
 2011-09-01
89 High Q microcavity light emitting diodes with buried AlN current apertures
 2011-07-25
90 Optical properties of self assembled GaN polarity inversion domain boundary
 2011-07-11
91 Highly Efficient and Bright LEDs Overgrown on GaN Nanopillar Substrates
 2011-07-01
92 Design of a HTS Magnet for Application to Resonant X-Ray Scattering
 2011-06-01
93 Investigation of efficiency droop for InGaN-based UV light-emitting diodes with InAlGaN barrier
 2011-05-23
94 Carbazole-Based Ladder-Type Heptacylic Arene with Aliphatic Side Chains Leading to Enhanced Efficiency of Organic Photovoltaics
 2011-05-10
95 Self-aligned contact metallization technology for III-V metal-oxide-semiconductor field effect transistors
 2011-05-01
96 Alternating Copolymers Incorporating Cyclopenta[2,1-b:3,4-b ']dithiophene Unit and Organic Dyes for Photovoltaic Applications
 2011-04-15
97 Uniplanar microstrip periodic structure for microwave circuits
 2011-04-14
98 Crystal Structure and Inhibition Studies of Transglutaminase from Streptomyces mobaraense
 2011-03-04
99 Enhanced Performance and Stability of a Polymer Solar Cell by Incorporation of Vertically Aligned, Cross-Linked Fullerene Nanorods
 2011-01-01
100 Inverted Octagonal Surface Defects in a-Plane AlGaN/GaN Multiple Quantum Wells
 2011-01-01
101 Poly-Si Nanowire Nonvolatile Memory With Nanocrystal Indium-Gallium-Zinc-Oxide Charge-Trapping Layer
 2010-12-01
102 Crystal Structure and Mutational Analysis of Aminoacylhistidine Dipeptidase from Vibrio alginolyticus Reveal a New Architecture of M20 Metallopeptidases
 2010-12-01
103 The technical framework of interactive functions for course-management systems: Students' perceptions, uses, and evaluations
 2010-11-01
104 Effects of Wet Chemical and Trimethyl Aluminum Treatments on the Interface Properties in Atomic Layer Deposition of Al(2)O(3) on InAs 2010-11-01
105 Design and Synthesis of Tetrahydropyridothieno[2,3-d]pyrimidine Scaffold Based Epidermal Growth Factor Receptor (EGFR) Kinase Inhibitors: The Role of Side Chain Chirality and Michael Acceptor Group for Maximal Potency
 2010-10-28
106 Formation of the distributed NiSiGe nanocrystals nonvolatile memory formed by rapidly annealing in N(2) and O(2) ambient 2010-10-01
107 Improvement of resistance switching characteristics in a thin FeO(x) transition layer of TiN/SiO(2)/FeO(x)/FePt structure by rapid annealing 2010-05-31
108 Temperature-dependent memory characteristics of silicon-oxide-nitride-oxide-silicon thin-film-transistors
 2010-05-03
109 Treatment of Reactive Black 5 by combined electrocoagulation-granular activated carbon adsorption-microwave regeneration process
 2010-03-15
110 A study of resistive switching effects on a thin FeO(x) transition layer produced at the oxide/iron interface of TiN/SiO(2)/Fe-contented electrode structures 2010-02-01
111 Identification, SAR Studies, and X-ray Co-crystallographic Analysis of a Novel Furanopyrimidine Aurora Kinase A Inhibitor 2010-02-01
112 Polymer photodetector with voltage-adjustable photocurrent spectrum
 2010-01-25
113 Epitaxial Overgrowth of Gallium Nitride Nano-Rods on Silicon (111) Substrates by RF-Plasma-Assisted Molecular Beam Epitaxy
 2010-01-01
114 Donor-acceptor polymers based on multi-fused heptacyclic structures: synthesis, characterization and photovoltaic applications
 2010-01-01
115 High birefringence lateral difluoro phenyl tolane liquid crystals
 2010-01-01
116 Output Power Enhancement of Light Emitting Diodes with Defect Passivation layer 2010-01-01
117 Role of germanium in the reduced temperature dependence of Ti-based nanocrystals formation for nonvolatile memory applications
 2009-12-28
118 Defect selective passivation in GaN epitaxial growth and its application to light emitting diodes
 2009-11-23
119 Junction and Device Characteristics of Gate-Last Ge p- and n-MOSFETs With ALD-Al(2)O(3) Gate Dielectric 2009-08-01
120 High efficiency light emitting diode with anisotropically etched GaN-sapphire interface
 2009-07-27
121 Size-Dependent Strain Relaxation and Optical Characteristics of InGaN/GaN Nanorod LEDs
 2009-07-01
122 Effects of Minority-Carrier Response Behavior on Ge MOS Capacitor Characteristics: Experimental Measurements and Theoretical Simulations
 2009-05-01
123 Adsorption Configurations and Reactions of Nitric Acid on TiO(2) Rutile (110) and Anatase (101) surfaces 2009-04-16
124 Growth of free-standing GaN layer on Si(111) substrate
 2009-03-15
125 Formation and Nonvolatile Memory Application of Ge Nanocrystals by Using Internal Competition Reaction of Si(1.33)Ge(0.67)O(2) and Si(2.67)Ge(1.33)N(2) Layers 2009-03-01
126 Purification, crystallization and preliminary X-ray analysis of an aminoacylhistidine dipeptidase (PepD) from Vibrio alginolyticus
 2009-03-01
127 The Annihilation of Threading Dislocations in the Germanium Epitaxially Grown within the Silicon Nanoscale Trenches
 2009-01-01
128 Synthesis and mesomorphic properties of -methylstilbene-based liquid crystals
 2009-01-01
129 Five-element circuit model using linear-regression method to correct the admittance measurement of metal-oxide-semiconductor capacitor
 2009-01-01
130 Enhancement of NiSi-Based Nanocrystal Formation by Incorporating Ge Elements for Nonvolatile Memory Devices
 2009-01-01
131 InAs-Channel Metal-Oxide-Semiconductor HEMTs with Atomic-Layer-Deposited Al(2)O(3) Gate Dielectric 2009-01-01
132 New Group Shuffled BP Decoding Algorithms for LDPC Codes
 2009-01-01
133 Application of fluorine doped oxide (SiOF) spacers for improving reliability in low temperature polycrystalline thin film transistors
 2008-12-01
134 Hierarchical Superstructures with Helical Sense in Self-Assembled Achiral Banana-Shaped Liquid Crystalline Molecules
 2008-11-10
135 Formation and nonvolatile memory characteristics of multilayer nickel-silicide NCs embedded in nitride layer
 2008-11-01
136 Expression and characterization of the biofilm-related and carnosine-hydrolyzing aminoacylhistidine dipeptidase from Vibrio alginolyticus
 2008-10-01
137 AlGaAs/InGaAs high electron mobility transistor grown on Si substrate with Ge/Ge(x)Si(1-x) metamorphic buffer layers 2008-09-01
138 GaN growth on Si(111) using simultaneous AlN/alpha-Si(3)N(4) buffer structure 2008-07-01
139 Temperature-dependent capacitance characteristics of RF LDMOS transistors with different layout structures
 2008-07-01
140 Passivation effect of poly-Si thin-film transistors with fluorine-ion-implanted spacers
 2008-06-01
141 Metamorphic In(0.53)Ga(0.47)As Metal-Oxide-Semiconductor Structure on a GaAs Substrate with ZrO(2) High-k Dielectrics 2008-05-01
142 Reliability characteristics of NiSi nanocrystals embedded in oxide and nitride layers for nonvolatile memory application
 2008-04-14
143 Formation of cobalt-silicide nanocrystals in Ge-doped dielectric layer for the application on nonvolatile memory
 2008-04-14
144 RF and logic performance improvement of In0.7Ga0.3As/InAs/In0.7Ga0.3As composite-channel HEMT using gate-sinking technology
 2008-04-01
145 Effects of interfacial sulfidization and thermal annealing on the electrical properties of an atomic-layer-deposited Al(2)O(3) gate dielectric on GaAs substrate
 2008-04-01
146 Performance enhancement of excimer laser crystallized poly-Si thin film transistors with fluorine implantation technology
 2008-03-31
147 Nonvolatile memory characteristics influenced by the different crystallization of Ni-Si and Ni-N nanocrystals
 2008-02-11
148 Synthesis of laterally substituted alpha-methylstilbene-tolane liquid crystals
 2008-01-01
149 Improved electrical properties of Gd2O3/GaAs capacitor with modified wet-chemical clean and sulfidization procedures
 2008-01-01
150 Enhancement of charge-storage performance in Ni-silicide nanocrystal devices by thermal annealing a Ni-Si-N thin film
 2008-01-01
151 Wet mesa etching process in InGaN-based light emitting diodes 2008-01-01
152 Formation of Mo silicide nanodot memory by rapid thermal annealing dual electron-gun evaporated Mo-Si layer 2008-01-01
153 From virtual environments to physical environments: Exploring interactivity in ubiquitous-learning systems 2008-01-01
154 Electrical and material characterization of atomic-layer-deposited Al(2)O(3) gate dielectric on ammonium sulfide treated GaAs substrates
 2008-01-01
155 Formation and nonvolatile memory effect of nickel-oxygen-silicon nanoparticles
 2007-11-26
156 Pi-shape gate polycrystalline silicon thin-film transistor for nonvolatile memory applications
 2007-11-19
157 Nonvolatile Si/SiO2/SiN/SiO2/Si type polycrystalline silicon thin-film-transistor memory with nanowire channels for improvement of erasing characteristics
 2007-11-05
158 Investigation of impact ionization in InAs-channel HEMT ford high-speed and low-power applications
 2007-10-01
159 Formation of Ge nanocrystals using Si1.33Ge0.67O2 and Si2.67Ge1.33N2 film for nonvolatile memory application
 2007-09-03
160 A novel nanowire channel poly-Si TFT functioning as transistor and nonvolatile SONOS memory
 2007-09-01
161 Performance enhancement by local strain in (110) channel n-channel metal-oxide-semicondiactor field-effect transistors on (111) substrate
 2007-09-01
162 Highly integrated automotive radar sensor 2007-08-31
163 Nonvolatile memory characteristics of nickel-silicon-nitride nanocrystal
 2007-08-20
164 A location-aware multicasting protocol for Bluetooth Location Networks
 2007-08-01
165 A delta-doped InGaP/InGaAs pHEMT with different doping profiles for device-linearity improvement
 2007-07-01
166 High-performance In0.52Al0.48As/In0.6Ga0.4As power metamorphic high electron mobility transistor for Ka-band applications
 2007-06-01
167 High-speed GaAs metal gate semiconductor field effect transistor structure grown on a composite Ge/Ge(x)Si(1-x)/Si substrate
 2007-04-15
168 Nonvolatile polycrystalline silicon thin-film-transistor memory with oxide/nitride/oxide stack gate dielectrics and nanowire channels
 2007-03-19
169 Formation of stacked Ni silicide nanocrystals for nonvolatile memory application
 2007-03-12
170 Systematical study of reliability issues in plasma-nitrided and thermally nitrided oxides for advanced dual-gate oxide p-channel metal-oxide-semiconductor field-effect transistors
 2007-03-01
171 Improved performance of F-ions-implanted poly-Si thin-film transistors using solid phase crystallization and excimer laser crystallization
 2007-03-01
172 Use of Si+ pre-ion-implantation on Si substrate to enhance the strain relaxation of the GexSi1-x metamorphic buffer layer for the growth of Ge layer on Si substrate
 2007-02-19
173 Effect of gate sinking on the device performance, of the InGaP/AlGaAs/InGaAs enhancement-mode PHEMT
 2007-02-01
174 Fabrication of 0.15-mu m Gamma-shaped gate In0.52Al0.48As/In0.6Ga0.4As metamorphic HEMTs using DUV lithography and tilt dry-etching technique
 2007-02-01
175 SPDT GaAs switches with copper metallized interconnects
 2007-02-01
176 Growth of very-high-mobility AlGaSb/InAs high-electron-mobility transistor structure on si substrate for high speed electronic applications
 2007-01-08
177 Evaluation of RF and logic performance for 80 nm InAs/InGaAs composite channel HEMTs using gate sinking technology 2007-01-01
178 Design for integration of RF power transistors in 0.13 mu m advanced CMOS technology 2007-01-01
179 Ultrathin Si capping layer suppresses charge trapping in HfOxNy/Ge metal-insulator-semiconductor capacitors
 2007-01-01
180 Study of thermal stability of HfOxNy/Ge capacitors using postdeposition annealing and NH3 plasma pretreatment
 2007-01-01
181 Formation of germanium nanocrystals embedded in a silicon-oxygen-nitride layer
 2007-01-01
182 Improved memory window for Ge nanocrystals embedded in SiON layer
 2006-10-16
183 Self-assembled In0.22Ga0.78As quantum dots grown on metamorphic GaAs/Ge/SixGe1-x/Si substrate
 2006-09-15
184 Small-signal modeling of SiGeHBTs using direct parameter-extraction method
 2006-09-01
185 Double delta-doped enhancement-mode InGaP/AlGaAs/InGaAs pseudomorphic high electron mobility transistor for linearity application
 2006-09-01
186 Formation of germanium nanocrystals embedded in silicon-oxygen-nitride layer
 2006-07-31
187 Thermochemical reaction of ZrOx(N-y) interfaces on Ge and Si substrates
 2006-07-03
188 Device linearity comparison of uniformly doped and delta-doped In0.52Al0.48As/In0.6Ga0.4As metamorphic HEMTs
 2006-07-01
189 A new class of wideband multisection 180 degrees hybrid rings using vertically installed planar couplers
 2006-06-01
190 Novel dual-metal gate technology using Mo-MoSix combination
 2006-06-01
191 An improved parameter-extraction method of SiGe HBTs' substrate network
 2006-06-01
192 Novel two-bit HfO2 nanocrystal nonvolatile flash memory
 2006-04-01
193 Improvement of electrical characteristics for fluorine-ion-implanted poly-Si TFTs using ELC
 2006-04-01
194 Optical characterization of ZnSe epilayers and ZnCdSe/ZnSe quantum wells grown on Ge/Ge0.95Si0.05/Ge0.9Si0.1/Si virtual substrates
 2006-03-15
195 Optimization of the growth of the InGaP etch-stop layer by MOVPE for InGaP/GaAs HBT device application
 2006-03-15
196 Formation of silicon germanium nitride layer with distributed charge storage elements
 2006-03-13
197 An assessment of single-electron effects in multiple-gate SOI MOSFETs with 1.6-nm gate oxide near room temperature
 2006-03-01
198 Effects of postdeposition annealing on the characteristics of HfOxNy dielectrics on germanium and silicon substrates
 2006-01-01
199 Electrical enhancement of solid phase crystallized poly-Si thin-film transistors with fluorine ion implantation
 2006-01-01
200 A fabrication of germanium nanocrystal embedded in silicon-oxygen-nitride layer 2006-01-01
201 Modified parallel-coupled filter with two independently controllable upper stopband transmission zeros
 2005-12-01
202 Lasting effects of instruction guided by the conflict map: Experimental study of learning about the causes of the seasons
 2005-12-01
203 Suppressing phosphorus diffusion in germanium by carbon incorporation
 2005-11-24
204 A CMOS low-noise amplifier for ultra wideband wireless applications 2005-11-01
205 Mobility enhancement of polycrystalline-Si thin-film transistors using nanowire channels by pattern-dependent metal-induced lateral crystallization
 2005-10-03
206 Effects of channel width on electrical characteristics of polysilicon TFTs with multiple nanowire channels
 2005-10-01
207 Reduction of leakage current in metal-induced lateral crystallization polysilicon TFTs with dual-gate and multiple nanowire channels
 2005-09-01
208 The interplay between different forms of CAI and students' preferences of learning environment in the secondary science class
 2005-09-01
209 An investigation of Taiwanese early adolescents' views about the nature of science
 2005-09-01
210 Design of microstrip quadruplet filters with source-load coupling
 2005-07-01
211 Linearity and power characteristics of SiGeHBTs at high temperatures for RF applications
 2005-07-01
212 A novel approach for parameter determination of HBT small-signal equivalent circuit 2005-06-01
213 Continuous and precise work function adjustment for integratable dual metal gate CMOS technology using Hf-Mo binary alloys
 2005-06-01
214 Degradation of low-frequency noise in partially depleted silicon-on-insulator metal oxide semiconductor field-effect transistors by hot-carrier stress
 2005-06-01
215 Reliability of strained SiGe channel p-channel metal-oxide-semiconductor field-effect transistors with ultra-thin (EOT=3.1nm) N(2)O-annealed SiN gate dielectric 2005-06-01
216 Dual-band mixer design 2005-06-01
217 Extraction of substrate parameters for RF MOSFETs based on four-port measurement
 2005-06-01
218 Microstrip directional coupler with nearly ideal TEM coupler performance
 2005-05-26
219 Switching current study: Hysteresis measurement of ferroelectric capacitors using current-voltage measurement method
 2005-04-01
220 An improved approach for small-signal equivalent-circuit parameter determination of InGaP/GaAs HBT
 2005-03-05
221 High-perfomance nonvolatile HfO2 nanocrystal memory
 2005-03-01
222 Miniaturized spurious passband suppression microstrip filter using meandered parallel coupled lines
 2005-02-01
223 2 V-operated InGaP-AlGaAs-InGaAs enhancement-mode pseudomorphic HEMT
 2005-02-01
224 Improvement of reliability for polycrystalline thin-film transistors using self-aligned fluorinated silica glass spacers 2005-01-01
225 Enhanced performance of poly-Si thin film transistors using fluorine ions implantation 2005-01-01
226 Electrical characteristics of thin HfO(2) gate dielectrics prepared using different pre-deposition surface treatments 2005-01-01
227 Deep sub-micron strained Si0.85Ge0.15 channel p-channel metal-oxide-semiconductor field-effect transistors (pMOSFETs) with ultra-thin N2O-annealed SiN gate dielectric
 2005-01-01
228 A GeSi-buffer structure for growth of high-quality GaAs epitaxial layers on a Si substrate
 2005-01-01
229 Effects of channel width and NH3 plasma passivation on electrical characteristics of polysilicon thin-film transistors by pattern-dependent metal-induced lateral crystallization
 2005-01-01
230 Basic characteristics of Pt/SrBi2Ta2O9/HfO2/Si structure using layer-by-layer crystallization
 2005-01-01
231 Hot-electron-induced electron trapping in 0.13 mu m nMOSFETs with ultrathin (EOT=1.6 nm) nitrided gate oxide 2005-01-01
232 HfO2 MIS capacitor with copper gate electrode
 2004-12-01
233 A broadband and low cost monolithic BiCMOS tuner chip
 2004-11-01
234 Stabilization and elimination of transient unstable mixed convective vortex flow of air in a bottom heated horizontal flat duct by top plate heating
 2004-09-01
235 Triangular current: Method for measuring hysteresis loops of ferroelectric capacitors
 2004-09-01
236 ESD protection design to overcome internal damage on interface circuits,of a CMOS IC with multiple separated power pins
 2004-09-01
237 Finger-gate array quantum pumps: Pumping characteristics and mechanisms 2004-08-01
238 Decomposition of 2-mercaptothiazoline in aqueous solution by ozonation
 2004-07-01
239 Direct measurement of electrical hysteresis of micron-sized Pb(Zr,Ti)O-3 capacitors using the constant current method
 2004-07-01
240 Composite-channel metamorphic high electron mobility transistor for low-noise and high-linearity applications
 2004-07-01
241 Growth of ZnSe epilayer on Si using Ge/GexSi1-x buffer structure
 2004-06-15
242 InGaP/InGaAs PHEMT with high IP3 for low noise applications
 2004-06-10
243 Low-noise metamorphic HEMTs with reflowed 0.1 mu m T-gate
 2004-06-01
244 Hot-carrier effects on power characteristics of SiGeHBTs
 2004-06-01
245 High-performance polycrystalline silicon thin-film transistor with multiple nanowire channels and lightly doped drain structure
 2004-05-10
246 A new method to extract MOSFET threshold voltage, effective channel length, and channel mobility using S-parameter measurement 2004-05-01
247 A dual-gate-controlled single-electron transistor using self-aligned polysilicon sidewall spacer gates on silicon-on-insulator nanowire
 2004-03-01
248 Short-channel poly-Si thin-film transistors with ultrathin channel and self-aligned tungsten-clad source/drain 2004-01-01
249 A novel coupling structure suitable for cross-coupled filters with folded quarter-wave resonators
 2003-12-01
250 The highlights in the nano world
 2003-11-01
251 Integrated antennas on Si with over 100 GHz performance, fabricated using an optimized proton implantation process
 2003-11-01
252 Realization of transmission zeros in combline filters using an auxiliary inductively coupled ground plane
 2003-10-01
253 High-performance microwave coplanar bandpass and bandstop filters on Si substrates
 2003-09-01
254 Study of nickel silicide contact on Si/Si1-xGex
 2003-09-01
255 High-performance Pt/SrBi2Ta2O9/HfO2/Si structure for nondestructive readout memory
 2003-09-01
256 Broadband tapered microstrip leaky-wave antenna
 2003-08-01
257 A study of parasitic resistance effects in thin-channel polycrystalline silicon TFTs with tungsten-clad source/drain
 2003-08-01
258 Stability investigation of single-wafer process by using a spin etcher 2003-07-01
259 High-current characterization of polysilicon diode for electrostatic discharge protection in sub-quarter-micron complementary metal oxide semiconductor technology
 2003-06-01
260 Dynamic behavior of ozonation with pollutant in a countercurrent bubble column with oxygen mass transfer
 2003-06-01
261 Growth of high-quality Ge epitaxial layers on Si(100)
 2003-05-15
262 Low-pressure crystallization of sol-gel-derived PbZr0.52Ti0.48O3 thin films at low temperature for low-voltage operation
 2003-05-01
263 Enhanced negative substrate bias degradation in nMOSFETs with ultrathin plasma nitrided oxide
 2003-05-01
264 A novel SiGe raised source/drain polycrystalline silicon thin-film transistor with improved on-current and larger breakdown voltage
 2003-03-01
265 Characteristics and stress-induced degradation of laser-activated low temperature polycrystalline silicon thin-film transistors
 2003-02-15
266 Miniaturized microstrip cross-coupled filters using quarter-wave or quasi-quarter-wave resonators
 2003-01-01
267 Analysis of narrow width effects in polycrystalline silicon thin film transistors
 2003-01-01
268 Polycrystalline silicon thin-film transistor with self-aligned SiGe raised source/drain
 2002-12-16
269 New nanometer T-gate fabricated by thermally reflowed resist technique
 2002-12-15
270 Dynamic model of ozone contacting process with oxygen mass transfer in bubble columns
 2002-11-01
271 Analysis of low-frequency noise in boron-doped polycrystalline silicon-germanium resistors
 2002-09-30
272 Decomposition of 2-naphthalenesulfonate in aqueous solution by ozonation with UV radiation
 2002-09-01
273 High power Al0.3Ga0.7As/In0.2Ga0.8As enhancement-mode PHEMT for low-voltage wireless communication systems
 2002-08-29
274 Impacts of gate structure on dynamic threshold SOI nMOSFETs
 2002-08-01
275 The extraction of MOSFET gate capacitance from S-parameter measurements
 2002-08-01
276 Using buried capacitor in LTCC-MLC balun
 2002-07-18
277 Reliability of laser-activated low-temperature polycrystalline silicon thin-film transistors
 2002-06-24
278 ESD protection design for CMOS RF integrated circuits using polysilicon diodes
 2002-06-01
279 LTCC-MLC chip-type balun realised by LC resonance method
 2002-05-23
280 A macro model of silicon spiral inductor
 2002-05-01
281 A dynamic model of ozone disinfection in a bubble column with oxygen mass transfer 2002-05-01
282 An investigation on RF CMOS stability related to bias and scaling
 2002-04-01
283 RF CMOS technology for MMIC
 2002-04-01
284 Photonic bandgap dielectric waveguide filter
 2002-04-01
285 Impact of thermal stability on the characteristics of complementary metal oxide semiconductor transistors with TiN metal gate
 2002-02-01
286 Low-voltage-operation high-power-density AlGaAs/InGaAs enhancement-mode pseudomorphic high-electron-mobility transistor for personal handy-phone handset application
 2002-01-15
287 Design on the low-capacitance bond pad for high-frequency I/O circuits in CMOS technology
 2001-12-01
288 An automatic macro program for radio frequency MOSFET characteristics analysis 2001-10-01
289 Improving the RF performance of 0.18 mu m CMOS with deep n-well implantation
 2001-10-01
290 Kinetics of decomposition of polyethylene glycol in electroplating solution by ozonation with UV radiation
 2001-10-01
291 Optimization of short channel effect with arsenic halo implant through polysilicon gate
 2001-09-01
292 Modeling ozone mass transfer with combined effects of ozone decomposition and reaction with pollutants in a bubble column 2001-09-01
293 Improved low temperature characteristics of p-channel MOSFETs with Si1-xGex raised source and drain
 2001-08-01
294 Ultra-broad-band doubly balanced star mixers using planar Mouw's hybrid junction
 2001-06-01
295 Electrical properties of shallow p(+)-n junction using boron-doped Si1-xGex layer deposited by ultrahigh vacuum chemical molecular epitaxy
 2001-05-01
296 The reaction of Co and Si1-xGex for MOSFET with poly-Si1-xGex gate
 2001-03-01
297 Electrical and compositional properties of co-silicided shallow p(+)-n junction using Si-capped/boron-doped Si1-xGex layer deposited by UHVCME
 2001-03-01
298 Microstructure effects on quantum efficiency in PtSi/p-Si(100) Schottky barrier detector
 2001-02-15
299 Oxygen- and growth rate-dependent regulation of Escherichia coli fumarase (FumA, FumB, and FumC) activity
 2001-01-01
300 The effects of super-steep-retrograde indium channel profile on deep submicron n-channel metal-oxide-semiconductor field-effect transistor
 2001-01-01
301 High-performance and high-reliability 80-nm gate-length DTMOS with indium super steep retrograde channel
 2000-12-01
302 Improved electrical properties of shallow p(+)-n junction using selectively grown graded Si1-xGex epitaxial structure 2000-12-01
303 The effects of growth temperature on the microstructure and electrical barrier height in PtSi/p-Si(100) Schottky barrier detector
 2000-10-03
304 Effects of an interposed Mo layer on the interfacial reactions of Ti/Si0.76Ge0.24 by rapid thermal annealing and pulsed laser annealing
 2000-10-01
305 Characterization and reliability of lightly-doped-drain polysilicon thin-film transistors with oxide sidewall spacer formed by one-step selective liquid phase deposition
 2000-10-01
306 Reduced reverse narrow channel effect in thin SOI nMOSFETs
 2000-09-01
307 An anomalous crossover in Vth roll-off for indium-doped nMOSFETs
 2000-09-01
308 Reduction of source/drain series resistance and its impact on device performance for PMOS transistors with raised Si1-xGex source/drain
 2000-09-01
309 Study on Ge/Si ratio, silicidation, and strain relaxation of high temperature sputtered Co/Si1-xGex structures
 2000-08-15
310 Plasma-process-induced damage in sputtered TiN metal-gate capacitors with ultrathin nitrided oxides
 2000-08-01
311 Effect of coplanar probe pad design on noise figures of 0.35 mu m MOSFETs
 2000-07-20
312 Plasma-induced charging damage in ultrathin (3-nm) gate oxides
 2000-07-01
313 Dimensional effects on the drain current of n- and p-channel polycrystalline silicon thin film transistors
 2000-07-01
314 Improved ultrathin gate oxide integrity in p(+)-polysilicon-gate p-channel metal oxide semiconductor with medium-dose fluorine implantation 2000-06-01
315 Improvements of amorphous-silicon inverted-staggered thin-film transistors using high-temperature-deposited Al gate with chemical mechanical polishing
 2000-05-01
316 High performance 0.1 mu m dynamic threshold MOSFET using indium channel implantation
 2000-03-01
317 Shallow-trench isolation with raised-field-oxide structure
 2000-03-01
318 CMOS RFIC: Application to wireless transceiver design 2000-02-01
319 Effects of polysilicon gate doping concentration on plasma charging damage in ultrathin gate oxides 2000-02-01
320 The effects of microcrystalline silicon film structure on low-high-low band-gap thin film transistor
 2000-01-29
321 Improved immunity to plasma damage in ultrathin nitrided oxides
 2000-01-01
322 Annealing effects on the interfacial reactions of Ni on Si0.76Ge0.24 and Si1-x-yGexCy
 2000-01-01
323 The combined effects of nitrogen implantation at S/D extension and N2O oxide on 0.18 mu m N- and P-metal oxide field effect transistors (MOSFETs)
 1999-12-01
324 Effects of Mo-free C40Ti(Si1-xGex)(2) precursors and the thickness of an interposed Mo layer on the enhanced formation of C54Ti(Si1-xGex)(2)
 1999-11-29
325 A multilevel interconnect technology with intrametal air gap for high-performance 0.25-mu m-and-beyond devices manufacturing
 1999-11-01
326 The novel improvement of low dielectric constant methylsilsesquioxane by N2O plasma treatment
 1999-10-01
327 A novel lightly doped drain polysilicon thin-film transistor with oxide sidewall spacer formed by one-step selective liquid phase deposition
 1999-08-01
328 Interfacial reactions of Co/Si0.76Ge0.24 and Co(Si0.76Ge0.24)/Si0.76Ge0.24 by pulsed KrF laser annealing
 1999-08-01
329 Characteristics of SiC-based thin-film LED fabricated using plasma-enhanced CVD system with stainless steel mesh
 1999-07-22
330 Characterization of Si1-x-yGexCy films grown by C+ implantation and subsequent pulsed laser annealing
 1999-07-15
331 Electrical properties of multiple high-dose Si implantation in p-GaN
 1999-07-15
332 Microstrip cascade trisection filter
 1999-07-01
333 Effects of O-2- and N2O-plasma treatments on properties of plasma-enhanced-chemical-vapor-deposition tetraethylorthosilicate oxide
 1999-07-01
334 Temperature-accelerated dielectric breakdown in ultrathin gate oxides
 1999-06-14
335 Room temperature oxidation of Cu/Si0.76Ge0.24 annealed at 200 to 300 degrees C
 1999-06-01
336 A novel broad-band Chebyshev-response rat-race ring coupler
 1999-04-01
337 Leakage current reduction of chemical-vapor-deposited Ta2O5 films on rugged polycrystalline silicon electrode for dynamic random access memory application
 1999-04-01
338 Oxide thickness dependence of plasma charging damage
 1999-03-01
339 The effects of shallow germanium halo doping on N-channel metal oxide semiconductor field effect transistors
 1999-01-15
340 A multioctave bandwidth rat-race singly balanced mixer
 1999-01-01
341 Epitaxial growth of the GaN film by remote-plasma metalorganic chemical vapor deposition
 1998-10-01
342 Improvement of reliability of metal-oxide semiconductor field-effect transistors with N2O nitrided gate oxide and N2O polysilicon gate reoxidation
 1998-10-01
343 Interfacial reactions of Pd/Si0.76Ge0.24 by pulsed KrF laser annealing 1998-09-07
344 Persistent photoconductivity in SiGe/Si quantum wells 1998-07-15
345 Optoelectronic characteristics of a-SiC : H-based pin thin film LEDs having a thin Mo buffer layer in contact with p-type a-Si : H
 1998-07-09
346 Comparison of N-2 and NH3 plasma passivation effects on polycrystalline silicon thin-film transistors
 1998-07-01
347 Rugged surface polycrystalline silicon film formed by rapid thermal chemical vapor deposition for dynamic random access memory stacked capacitor application
 1998-06-01
348 Evaluation of plasma charging damage in ultrathin gate oxides
 1998-03-01
349 Effects of N2O-annealed sacrificial oxide on the short-channel effects of nMOSFETs
 1998-02-19
350 Direct oxidation of Si1-xGex layers using Vacuum-Ultra-Violet light radiation in oxygen
 1998-02-01
351 Suppression of boron penetration in p(+) polysilicon gate using Si-B diffusion source
 1998-01-08
352 Catalytic decomposition of ozone in the presence of water vapor 1998-01-01
353 A refined model for ozone mass transfer in a bubble column 1998-01-01
354 Effects of isolation materials on facet formation for silicon selective epitaxial growth 1997-10-20
355 Pulsed KrF laser annealing of Ni/Si0.76Ge0.24 films 1997-10-01
356 Optoelectronic characteristics of alpha-SiC:H-based P-I-N thin-film light-emitting diodes with low-resistance and high-reflectance N+-alpha-SiCGe:H layer
 1997-09-01
357 High-efficiency and low-distortion directly-ion-implanted GaAs power MESFET's for digital personal handy-phone applications
 1997-09-01
358 Interfacial abruptness in Si/SiGe heteroepitaxy grown by ultrahigh vacuum chemical vapor deposition
 1997-09-01
359 2-V-operation delta-doped power HEMT's for personal handy-phone systems
 1997-08-01
360 Effects of isolation oxides on undercut formation and electrical characteristics for silicon selective epitaxial growth
 1997-06-01
361 Porous silicon light-emitting diode with tunable color
 1997-05-01
362 The role of resist for ultrathin gate oxide degradation during O-2 plasma ashing
 1997-05-01
363 Interfacial reactions of the Co/Si1-xGex system
 1997-04-01
364 A novel thin-film transistor with vertical offset structure
 1997-04-01
365 Electrical and luminescent characteristics of alpha-SiC:H p-i-n thin-film LED's with graded-gap junctions
 1997-04-01
366 Very high hole mobility in p-type Si/SiGe modulation-doped heterostructures
 1997-03-15
367 Resist-related damage on ultrathin gate oxide during plasma ashing
 1997-02-01
368 Low temperature epitaxy of Si and Si1-xGex by utrahigh vacuum-chemical molecular epitaxy 1997-01-01
369 A high-performance thin-film transistor with a vertical offset structure
 1996-12-01
370 Au/Ge/Pd ohmic contacts to n-GaAs with the Mo/Ti diffusion barrier
 1996-12-01
371 Characterization of boron silicide layer deposited by ultrahigh-vacuum chemical-vapor deposition 1996-11-01
372 Low-temperature and low thermal budget fabrication of polycrystalline silicon thin-film transistors
 1996-11-01
373 Mechanism of nitrogen coimplant for suppressing boron penetration in p(+)-polycrystalline silicon gate of p metal-oxide semiconductor field effect transistor 1996-09-16
374 A novel structure for three-dimensional silicon magnetic transducers to improve the sensitivity symmetry
 1996-09-01
375 Schottky contact and the thermal stability of Ni on n-type GaN 1996-08-01
376 Growth and electrical characterization of Si delta-doped GaInP by low pressure metalorganic chemical vapor deposition 1996-05-15
377 Effect of Ge incorporation on the performance of p-channel polycrystalline Si1-xGex thin-film transistors
 1996-05-01
378 5 mm high-power-density dual-delta-doped power HEMT's for 3 V L-band applications
 1996-05-01
379 Combined absorption and self-decomposition of ozone in aqueous solutions with interfacial resistance 1996-05-01
380 Uniformity of epilayer grown by ultrahigh-vacuum chemical vapor deposition
 1996-04-01
381 Excellent Au/Ge/Pd ohmic contacts to n-type GaAs using Mo/Ti as the diffusion barrier
 1996-04-01
382 High-performance An/Ti/Ge/Pd ohmic contacts on n-Type In0.5Ga0.5P
 1996-04-01
383 Phosphorus doping of Si and Si1-xGex grown by ultrahigh vacuum chemical vapor deposition using Si2H6 and GeH4 1996-03-11
384 Fabrication of thin film transistors by chemical mechanical polished polycrystalline silicon films
 1996-03-01
385 Studies on damage removing efficiency of B-11(+) and BF2+ implanted Si0.84Ge0.16 epilayers by rapid thermal annealing 1996-01-08
386 Analysis of high-field hole transport characteristics in Si1-xGex alloys with a bond orbital band structure 1996-01-01
387 CHARACTERISTICS OF POLYCRYSTALLINE FILMS GROWN BY ULTRAHIGH-VACUUM CHEMICAL-VAPOR-DEPOSITION SYSTEM
 1995-12-01
388 A COMPREHENSIVE STUDY OF SUPPRESSION OF BORON PENETRATION BY AMORPHOUS-SI GATE IN P+-GATE PMOS DEVICES
 1995-12-01
389 LOW-TEMPERATURE GROWTH OF SILICON-BORON LAYER AS SOLID DIFFUSION SOURCE FOR POLYSILICON CONTACTED P(+)-N SHALLOW JUNCTION
 1995-12-01
390 Effects of rapid thermal annealing on Si delta-doped GaInP grown by low pressure metalorganic chemical vapor deposition
 1995-12-01
391 BALUN DESIGN FOR UNIPLANAR BROAD-BAND DOUBLE BALANCED MIXER
 1995-11-23
392 BORON INCORPORATION IN SI1-XGEX FILMS GROWN BY ULTRAHIGH-VACUUM CHEMICAL-VAPOR-DEPOSITION USING SI2H6 AND GEH4 1995-11-13
393 STUDY OF SCHOTTKY BARRIERS ON N-TYPE GAN GROWN BY LOW-PRESSURE METALORGANIC CHEMICAL-VAPOR-DEPOSITION 1995-10-30
394 EFFECTS OF DRY-ETCHING DAMAGE REMOVAL ON LOW-TEMPERATURE SILICON SELECTIVE EPITAXIAL-GROWTH 1995-10-01
395 SILICON DELTA-DOPING OF GAINP GROWN BY LOW-PRESSURE METALORGANIC CHEMICAL-VAPOR-DEPOSITION 1995-09-01
396 ABRUPTNESS OF GE COMPOSITION AT THE SI/SIGE INTERFACE GROWN BY ULTRAHIGH-VACUUM CHEMICAL-VAPOR-DEPOSITION 1995-08-21
397 SUPPRESSION OF BORON PENETRATION IN BF2-IMPLANTED P-TYPE GATE MOSFET BY TRAPPING OF FLUORINES IN AMORPHOUS GATE
 1995-08-01
398 EPITAXY OF SI1-XGEX BY ULTRAHIGH-VACUUM CHEMICAL-VAPOR-DEPOSITION USING SI2H6 AND GEH4
 1995-07-15
399 ORIENTATION DEPENDENCE OF COHERENT HOLE OSCILLATIONS IN GAAS/ALGAAS COUPLED QUANTUM-WELLS
 1995-07-01
400 EFFECT OF OXYGEN IMPURITY ON MICROSTRUCTURE AND BORON PENETRATION IN A BF2+ IMPLANTED LPCVD STACKED AMORPHOUS-SILICON P(+) GATED PMOS CAPACITOR
 1995-07-01
401 BACK-GATING EFFECTS ON THE GA0.1IN0.8P/INP/INGAAS HIGH-ELECTRON-MOBILITY TRANSISTOR
 1995-07-01
402 CALCULATION OF THE STRUCTURAL DEPENDENCE OF INFRARED-ABSORPTION IN P-TYPE STRAINED-LAYER SIGE/SI QUANTUM-WELLS 1995-06-15
403 THE LONG-TERM RELAXATION AND BUILDUP TRANSIENT OF PHOTOCONDUCTIVITY IN SI1-XGEX/SI QUANTUM-WELLS
 1995-06-05
404 INVESTIGATION ON THE DISTRIBUTION OF FLUORINE AND BORON IN POLYCRYSTALLINE SILICON SILICON SYSTEMS
 1995-06-01
405 CHARACTERISTICS OF GRADED-LIKE MULTIPLE-DELTA-DOPED GAAS FIELD-EFFECT TRANSISTORS 1995-05-08
406 LUMINESCENCE OF LOW-TEMPERATURE GAAS IN A GAAS/IN0.2GA0.8AS MULTIPLE-QUANTUM-WELL STRUCTURE 1995-04-17
407 REACTIVE ION ETCHING OF GAINP, GAAS, AND ALGAAS
 1995-04-01
408 THE THERMAL-STABILITY OF OHMIC CONTACT TO N-TYPE INGAAS LAYER 1995-02-01
409 CHARACTERISTICS OF BORON-DIFFUSION IN POLYSILICON SILICON SYSTEMS WITH A THIN SI-B LAYER AS DIFFUSION SOURCE
 1995-02-01
410 SUBSTRATE ORIENTATION DEPENDENCE OF LOW-TEMPERATURE GAAS GROWN BY MOLECULAR-BEAM EPITAXY 1995-01-02
411 HIGH CARRIER DENSITY AND MOBILITY IN GAAS/INGAAS/GAAS DOUBLE DELTA-DOPED CHANNELS HETEROSTRUCTURES 1995-01-01
412 APPLICATION OF A FLUORINATED SOLVENT TO THE CONVENTIONAL OZONATION PROCESS FOR THE DESTRUCTION OF 2,4-DICHLOROPHENOL
 1995-01-01
413 QUANTUM CONFINEMENT EFFECTS OF SI/SIGE STRAINED-LAYER SUPERLATTICES GROWN BY AN ULTRAHIGH-VACUUM CHEMICAL-VAPOR-DEPOSITION TECHNIQUE 1994-12-01
414 AS PRECIPITATE REDISTRIBUTION IN SI DELTA-DOPED LOW-TEMPERATURE GAAS 1994-11-15
415 A NOVEL DIAC-LIKE SWITCH USING DOUBLE TRIANGULAR BARRIERS 1994-11-01
416 ANOMALOUS REVERSE SHORT-CHANNEL EFFECT IN P+ POLYSILICON GATED P-CHANNEL MOSFET
 1994-11-01
417 SELECTIVE EPITAXIAL-GROWTH OF GAINP BY LOW-PRESSURE METAL-ORGANIC CHEMICAL-VAPOR-DEPOSITION USING ETHYLDIMETHYLINDIUM AS IN-SOURCE
 1994-10-24
418 CALCULATION OF HOLE MOBILITY IN DOPED SIGE ALLOYS USING A MONTE-CARLO METHOD WITH A BOND ORBITAL BAND-STRUCTURE 1994-10-15
419 ELECTROLUMINESCENCE CHARACTERISTICS AND CURRENT-CONDUCTION MECHANISM OF A SI-C-H-P-I-N THIN-FILM LIGHT-EMITTING-DIODES WITH BARRIER LAYER INSERTED AT P-I INTERFACE 1994-10-01
420 FABRICATION OF P-CHANNEL POLYCRYSTALLINE SI1-XGEX THIN-FILM TRANSISTORS BY ULTRAHIGH-VACUUM CHEMICAL-VAPOR-DEPOSITION 1994-09-26
421 PROPERTIES OF PLASMA-ENHANCED CHEMICAL-VAPOR-DEPOSITED A-SINX-H BY VARIOUS DILUTION GASES 1994-09-15
422 MAGNESIUM DOPING OF INGAALP GROWN BY LOW-PRESSURE METALORGANIC CHEMICAL-VAPOR-DEPOSITION 1994-09-05
423 ELECTROLUMINESCENCE OF A-SIC-H P-I-N THIN-FILM LIGHT-EMITTING-DIODES WITH QUANTUM-WELL-INJECTION STRUCTURES 1994-09-01
424 EFFECTS OF SIH4, GEH4, AND B2H6 ON THE NUCLEATION AND DEPOSITION OF POLYCRYSTALLINE SI1-XGEX FILMS
 1994-09-01
425 INFLUENCE OF METALORGANIC SOURCES ON THE COMPOSITION UNIFORMITY OF SELECTIVELY GROWN GAXIN1-XP
 1994-09-01
426 EFFECT OF BORON DOPING ON THE STRUCTURAL-PROPERTIES OF POLYCRYSTALLINE SILICON FILMS GROWN AT REDUCED PRESSURES 1994-08-01
427 ANALYTICAL MODELING OF POLYCRYSTALLINE SILICON EMITTER BIPOLAR-TRANSISTORS UNDER HIGH-LEVEL INJECTION 1994-08-01
428 HIGH-LEVEL INJECTION INFLUENCE ON THE HIGH-FREQUENCY PERFORMANCE OF POLYCRYSTALLINE SILICON EMITTER BIPOLAR-TRANSISTORS 1994-08-01
429 SUBMICRON T-SHAPED GATE HEMT FABRICATION USING DEEP-UV LITHOGRAPHY
 1994-08-01
430 HETEROJUNCTION BIPOLAR-TRANSISTORS WITH EMITTER BARRIER LOWERED BY DELTA-DOPING
 1994-08-01
431 TIWN SCHOTTKY CONTACTS TO N-GA(0.51)IN(0.49)P
 1994-08-01
432 EFFECTS OF N2O-PLASMA TREATMENT OF A-SIOXNY/A-SINX GATE INSULATORS ON ELECTRICAL STABILITY OF A-SIH THIN-FILM TRANSISTORS
 1994-07-15
433 ANALYSIS OF DIFFERENTIAL GAIN IN GAAS/ALGAAS QUANTUM-WELL LASERS 1994-07-01
434 NEW LARGE-ANGLE TILT IMPLANTED DRAIN STRUCTURE - SURFACE COUNTER-DOPED-LIGHTLY DOPED DRAIN FOR HIGH HOT-CARRIER RELIABILITY
 1994-07-01
435 HIGH-RESOLUTION X-RAY CHARACTERIZATION OF LOW-TEMPERATURE GAAS/AS SUPERLATTICE GROWN BY MOLECULAR-BEAM EPITAXY 1994-06-27
436 CATION SOURCE DEPENDENCE OF GA0.5IN0.5P GROWTH-RATE BY LOW-PRESSURE METALORGANIC CHEMICAL-VAPOR-DEPOSITION
 1994-06-15
437 INVESTIGATION OF NEW NARROW-BANDWIDTH A-SI-H PHOTODETECTOR
 1994-06-01
438 2-DIMENSIONAL ARSENIC PRECIPITATION BY IN DELTA-DOPING DURING LOW-TEMPERATURE MOLECULAR-BEAM EPITAXY GROWTH OF GAAS OR ALGAAS 1994-05-09
439 EFFECT OF INTERFACIAL OXIDE ON STATIC AND HIGH-FREQUENCY PERFORMANCE IN POLYEMITTER BIPOLAR-TRANSISTORS UNDER HIGH-LEVEL INJECTION
 1994-05-01
440 NEW POLYSILICON-OXIDE-NITRIDE-OXIDE-SILICON ELECTRICALLY ERASABLE PROGRAMMABLE READ-ONLY MEMORY DEVICE APPROACH FOR ELIMINATING OFF-CELL LEAKAGE CURRENT
 1994-05-01
441 TEMPERATURE INFLUENCE ON THE GENERALIZED EINSTEIN RELATION FOR DEGENERATE SEMICONDUCTORS WITH ARBITRARY BAND STRUCTURES
 1994-05-01
442 LOW-TEMPERATURE GROWTH OF SILICON-BORON LAYER BY ULTRAHIGH-VACUUM CHEMICAL-VAPOR-DEPOSITION 1994-04-04
443 NANOMETER THICK SI/SIGE STRAINED-LAYER SUPERLATTICES GROWN BY AN ULTRAHIGH-VACUUM CHEMICAL-VAPOR-DEPOSITION TECHNIQUE 1994-04-01
444 EFFECT OF GE CONCENTRATION ON STATIC AND MICROWAVE PERFORMANCES IN GEXSI1-X HETEROJUNCTION BIPOLAR-TRANSISTORS UNDER HIGH-LEVEL INJECTION
 1994-04-01
445 CHARACTERIZATION OF SI/SIGE STRAINED-LAYER SUPERLATTICES GROWN BY AN ULTRAHIGH-VACUUM CHEMICAL-VAPOR-DEPOSITION TECHNIQUE
 1994-04-01
446 MEASUREMENT OF THIN OXIDE-FILMS ON IMPLANTED SI-SUBSTRATE BY ELLIPSOMETRY
 1994-04-01
447 STRONG ACCUMULATION OF AS PRECIPITATES IN LOW-TEMPERATURE INGAAS QUANTUM-WELLS GROWN BY MOLECULAR-BEAM EPITAXY 1994-03-21
448 GAAS BIDIRECTIONAL BISTABILITY SWITCH USING DOUBLE TRIANGULAR BARRIER STRUCTURES 1994-03-01
449 DEPOSITION OF IN-SITU BORON-DOPED POLYCRYSTALLINE SILICON FILMS AT REDUCED PRESSURES 1994-02-07
450 AN EFFICIENT APPROACH TO REAL-TIME TRAFFIC ROUTEING FOR TELEPHONE NETWORK MANAGEMENT 1994-02-01
451 LOW-TEMPERATURE EPITAXIAL-GROWTH OF SILICON AND SILICON-GERMANIUM ALLOY BY ULTRAHIGH-VACUUM CHEMICAL-VAPOR-DEPOSITION
 1994-01-01
452 A STUDY ON BILATERAL LATCH-UP SELF-TRIGGERING IN COMPLEMENTARY METAL-OXIDE-SEMICONDUCTOR PROTECTION CIRCUITS
 1994-01-01
453 A KNOWLEDGE-BASED OPERATION SUPPORT SYSTEM FOR NETWORK TRAFFIC MANAGEMENT 1994-01-01
454 COMPRESSIVE AND TENSILE STRAIN EFFECTS ON HOLE TUNNELING IN AN INGAAS/ALLNAS ASYMMETRICAL COUPLED-QUANTUM-WELL 1993-12-15
455 ENHANCEMENT OF BAND-EDGE LUMINESCENCE IN HYDROGENATED STRAINED SI(0.84)GE(0.16)/SI QUANTUM-WELLS BY PHOTOCHEMICAL VAPOR-DEPOSITION 1993-12-01
456 STUDY OF SCHOTTKY CONTACTS ON N-GA0.51IN0.49P BY LOW-PRESSURE METAL-ORGANIC CHEMICAL-VAPOR-DEPOSITION 1993-11-01
457 THE BEHAVIOR OF BILATERAL LATCH-UP TRIGGERING IN VLSI ELECTROSTATIC DISCHARGE DAMAGE PROTECTION CIRCUITS
 1993-11-01
458 STRONG LUMINESCENCE INTENSITIES IN AL0.22GA0.78AS GROWN ON MISORIENTED (111)B GAAS 1993-10-25
459 CURRENT GAINS OF ALAS/GAAS TUNNELING EMITTER BIPOLAR-TRANSISTORS WITH 25-500-ANGSTROM BARRIER THICKNESS
 1993-10-14
460 CARRIER-INDUCED ENERGY SHIFT IN GAAS/ALGAAS MULTIPLE-QUANTUM-WELL LASER-DIODES
 1993-10-01
461 EVIDENCE OF ZERO POTENTIAL SPIKE ENERGY IN ALGAAS GAAS HETEROSTRUCTURE EMITTER BIPOLAR-TRANSISTORS 1993-10-01
462 ANOMALOUS DOPING BEHAVIOR OF IN-SITU BORON-DOPED POLYCRYSTALLINE SILICON DEPOSITED BY ULTRAHIGH-VACUUM CHEMICAL-VAPOR-DEPOSITION 1993-09-13
463 GROWTH OF UNDOPED POLYCRYSTALLINE SI BY AN ULTRAHIGH-VACUUM CHEMICAL-VAPOR-DEPOSITION SYSTEM 1993-09-06
464 HYDROGENATED AMORPHOUS-SILICON CARBIDE DOUBLE GRADED-GAP P-I-N THIN-FILM LIGHT-EMITTING-DIODES
 1993-09-01
465 CHARGE LOSS DUE TO AC PROGRAM DISTURBANCE STRESSES IN EPROMS
 1993-09-01
466 A NEW DRAIN ENGINEERING STRUCTURE-SCD-LDD (SURFACE COUNTER DOPED LDD) FOR IMPROVED HOT-CARRIER RELIABILITY 1993-09-01
467 CHARACTERISTICS OF LOW-TEMPERATURE AND LOW-ENERGY PLASMA-ENHANCED CHEMICAL-VAPOR-DEPOSITED SIO2 1993-08-15
468 AMBIPOLAR PERFORMANCES OF NOVEL AMORPHOUS SILICON-GERMANIUM ALLOY THIN-FILM TRANSISTORS 1993-08-01
469 THE STUDY OF EMITTER THICKNESS EFFECT ON THE HETEROSTRUCTURE EMITTER BIPOLAR-TRANSISTORS 1993-07-15
470 NEW PHYSICAL FORMULATION OF THE THERMIONIC EMISSION CURRENT AT THE HETEROJUNCTION INTERFACE
 1993-07-01
471 DOPING OF INGAP EPITAXIAL LAYERS GROWN BY LOW-PRESSURE METAL-ORGANIC CHEMICAL-VAPOR-DEPOSITION 1993-06-20
472 CARBON INCORPORATION DURING GROWTH OF GAAS BY TEGA-ASH3 BASE LOW-PRESSURE METALORGANIC CHEMICAL-VAPOR-DEPOSITION 1993-06-01
473 TRANSIENT AND STEADY-STATE CARRIER TRANSPORT UNDER HIGH-FIELD STRESSES IN SONOS EEPROM DEVICE
 1993-06-01
474 OBSERVATION OF QUANTUM CONFINEMENT EFFECTS IN STRAINED SI0.84GE0.16/SI QUANTUM-WELLS AT ROOM-TEMPERATURE 1993-05-24
475 HYDROGENATED AMORPHOUS SILICON-CARBIDE THIN-FILM LIGHT-EMITTING DIODE WITH QUANTUM-WELL-INJECTION STRUCTURE
 1993-04-15
476 NOVEL ALGAAS/GAAS HETEROJUNCTION BIPOLAR-TRANSISTORS FABRICATED BY 2-STAGE MOLECULAR-BEAM EPITAXY 1993-04-01
477 SEMIINSULATING IRON-DOPED INDIUM-PHOSPHIDE GROWN BY LOW-PRESSURE METAL ORGANIC-CHEMICAL VAPOR-DEPOSITION 1993-03-01
478 VALENCE-BAND MIXING EFFECTS ON HOLE OSCILLATIONS IN COUPLED QUANTUM-WELLS 1993-02-15
479 FIELD INVERSION GENERATED IN THE CMOS DOUBLE-METAL PROCESS DUE TO PETEOS AND SOG INTERACTIONS
 1993-01-01
480 BOLOMETRIC RESPONSE OF SUPERCONDUCTING YBA2CU3O7-X MICROBRIDGES 1992-12-15
481 GRADED-GAP A-SIC-H P-I-N THIN-FILM LIGHT-EMITTING-DIODES
 1992-07-01
482 EFFECTS OF POLYSILICON GATE ON CHARACTERISTICS OF ONO CAPACITORS 1992-05-01
483 INTRINSIC AND EXTRINSIC EFFECTS ON PERFORMANCE LIMITATION OF ALGAAS/GAAS DOUBLE-BARRIER RESONANT TUNNELING STRUCTURES 1992-05-01
484 DIRECT EVIDENCE OF GATE OXIDE THICKNESS INCREASE IN TUNGSTEN POLYCIDE PROCESSES
 1991-11-01
485 BOLOMETRIC YBA2CU3O7-X INFRARED DETECTOR
 1991-09-12
486 QUANTUM EFFECT IN THE ACCUMULATION LAYER ON FIELD-INDUCED PHOTOLUMINESCENCE OF DOUBLE-BARRIER RESONANT TUNNELING STRUCTURES 1991-07-01
487 2-DIMENSIONAL ELECTRON GASES IN DELTA-DOPED GAAS/IN0.25GA0.75AS/GAAS HETEROSTRUCTURES 1991-06-10
488 THE DELTA-DOPED IN0.25GA0.75AS/GAAS PSEUDOMORPHIC HIGH ELECTRON-MOBILITY TRANSISTOR STRUCTURES PREPARED BY LOW-PRESSURE METAL ORGANIC-CHEMICAL VAPOR-DEPOSITION
 1991-06-01
489 AMORPHOUS SI/SIC PHOTOTRANSISTORS AND AVALANCHE PHOTODIODES
 1991-06-01
490 ENERGY-STATES OF FINITE-BARRIER QUANTUM WIRES IN THE PRESENCE OF AN EXTERNAL ELECTRIC-FIELD 1991-04-08
491 ELECTRICAL CHARACTERISTICS OF DOUBLE-BARRIER RESONANT TUNNELING STRUCTURES WITH DIFFERENT ELECTRODE DOPING CONCENTRATIONS 1991-04-01
492 INVESTIGATION OF INDIUM DOPING AND INCORPORATION IN ALGAAS/GAAS DOUBLE-BARRIER RESONANT TUNNELING STRUCTURES
 1991-02-28
493 HYDROGENATED AMORPHOUS SI/SIC SUPERLATTICE PHOTOTRANSISTORS 1991-02-01
494 CHARACTERIZATION OF IMPROVED ALGAAS/GAAS RESONANT TUNNELING HETEROSTRUCTURE BIPOLAR-TRANSISTORS
 1991-02-01
495 RESONANT TUNNELING OF ELECTRONS FROM QUANTIZED LEVELS IN THE ACCUMULATION LAYER OF DOUBLE-BARRIER HETEROSTRUCTURES 1990-11-26
496 CHARACTERIZATION OF A GAAS CURRENT-CONTROLLED BIPOLAR-UNIPOLAR TRANSITION NEGATIVE DIFFERENTIAL RESISTANCE TRANSISTOR 1990-08-20
497 OPTICAL AND NOISE CHARACTERISTICS OF AMORPHOUS SI/SIC SUPERLATTICE REACH-THROUGH AVALANCHE PHOTODIODES
 1990-08-01
498 ELECTRICAL AND OPTICAL CHARACTERISTICS OF AN A-SI-H/C-SI HETEROJUNCTION SWITCH
 1990-08-01
499 A NOVEL GAAS CURRENT-CONTROLLED BIPOLAR UNIPOLAR TRANSITION NEGATIVE DIFFERENTIAL RESISTANCE TRANSISTOR PREPARED BY MOLECULAR-BEAM EPITAXY 1990-06-01
500 ROOM-TEMPERATURE OPERATION OF A NOVEL NEGATIVE DIFFERENTIAL RESISTANCE DEVICE PREPARED BY MOLECULAR-BEAM EPITAXY 1990-06-01
501 VOLTAGE-CONTROLLED 3 TERMINAL GAAS NEGATIVE DIFFERENTIAL RESISTANCE DEVICE USING N+-I-P+-I-N+ STRUCTURE
 1990-06-01
502 CURRENT-INJECTION 3-TERMINAL GAAS REGENERATIVE SWITCHES 1990-05-01
503 REPETITION OF NEGATIVE DIFFERENTIAL RESISTANCE IN VERTICALLY INTEGRATED DOUBLE-BARRIER RESONANT TUNNELING STRUCTURES 1990-05-01
504 INVESTIGATION OF 3-TERMINAL VOLTAGE-CONTROLLED SWITCHING DEVICES PREPARED BY MOLECULAR-BEAM EPITAXY 1990-05-01
505 THRESHOLD SWITCHING TRANSIENT IN METAL A-SI-H C-SI(P-N) (MASS) HETEROJUNCTION DEVICE 1990-04-01
506 A TRISTATE SWITCH USING TRIANGULAR BARRIERS
 1990-02-01
507 THE HYDROGENATED AMORPHOUS-SILICON REACH-THROUGH AVALANCHE PHOTODIODES (A-SI-H RAPDS)
 1990-02-01
508 A NOVEL 3-TERMINAL VOLTAGE-CONTROLLED SWITCHING DEVICE PREPARED BY MOLECULAR-BEAM EPITAXY 1989-12-20
509 A HYDROGENATED AMORPHOUS SI/SIC HETEROJUNCTION PHOTOTRANSISTOR 1989-10-01
510 APPLICATION OF SUPERLATTICE GATE AND MODULATION-DOPED BUFFER FOR GAAS POWER MESFET GROWN BY MBE 1989-09-01
511 GEOMETRY-EFFECTS ON THE GAAS BIPOLAR UNIPOLAR NEGATIVE DIFFERENTIAL RESISTANCE TRANSISTOR 1989-09-01
512 ORIGIN OF THE ENHANCEMENT OF NEGATIVE DIFFERENTIAL RESISTANCE AT LOW-TEMPERATURES IN DOUBLE-BARRIER RESONANT TUNNELING STRUCTURES
 1989-07-01
513 NOVEL GAAS VOLTAGE-CONTROLLABLE NEGATIVE DIFFERENTIAL RESISTANCE TRANSISTOR PREPARED BY MOLECULAR-BEAM EPITAXY 1989-03-20
514 THE DOPED QUANTUM WELL GATE FET FABRICATED BY LOW-PRESSURE MOCVD 1988-12-01
515 HIGH-TEMPERATURE BEHAVIOR OF PD-N-GAAS CONTACTS 1988-11-01
516 AMORPHOUS-SILICON SILICON-CARBIDE SUPERLATTICE AVALANCHE PHOTODIODES
 1988-08-01
517 AN IMPROVED MO/N-GAAS CONTACT BY INTERPOSITION OF A THIN PD LAYER
 1988-06-01
518 STUDY OF ELECTRICAL CHARACTERISTICS ON THERMALLY NITRIDED SIO2 (NITROXIDE) FILMS
 1984-01-01
519 AN INVESTIGATION OF MINORITY-CARRIER LIFETIME IN SILICON DOPED EITHER WITH ZINC OR COBALT 1980-01-01
520 METAL-N-GAP SCHOTTKY-BARRIER HEIGHTS 1979-01-01
521 SPECIFIC CONTACT RESISTANCE OF NI-AU-GE-NGAP SYSTEM 1978-01-01
522 TI-TIO2 GATED MOS DIODE LIGHT SENSOR 1978-01-01
523 STUDY OF CHARACTERISTICS OF A MG-SI DIODE 1974-01-01

Books

序號
No.		 標題
Title		 著作日期
Date
1 活力 : 台灣如何創造半導體與個人電腦產業奇蹟 2001
2 ULSI devices 2000
3 積體電路製程及設備技術手冊 1997
4 ULSI technology 1996
5 GaAs high-speed devices : physics, technology, and circuit applications 1994

Others

序號
No.		 標題
Title		 著作日期
Date
1 Coherent phonon manipulation in coupled mechanical resonators (vol 9, pg 480, 2013) 2013-09-01
2 Growth and Characteristics of a-Plane GaN on ZnO Heterostructure
 2013-01-01
3 Hierarchical Superstructures with Control of Helicity from the Self-Assembly of Chiral Bent-Core Molecules
 2012-07-01
4 Investigation statistics of bipolar multilevel memristive mechanism and characterizations in a thin FeO(x) transition layer of TiN/SiO(2)/FeO(x)/Fe structure (vol 110, 053703, 2011) 2011-12-01
5 Special Issue on Vehicular Wireless Networks and Vehicular Intelligent Transportation Systems Foreword 2010-05-01
6 Crystal structure of aminoacylhistidine dipeptidase from vibrio alginolyticus, a metallopeptidase with dinuclear metal center. 2009-08-16
7 Device linearity comparison of uniformly doped and delta-doped In0.52Al0.48As/In0.6Ga0.4As metamorphic HEMTs (vol 27, pg 535, 2006)
 2006-10-01
8 Interface-blocking mechanism for reduction of threading dislocations in SiGe and Ge epitaxial layers on Si(100) substrates
 2004-09-01
9 Copper electroplating for future ultralarge scale integration interconnection (vol 18, pg 656, 2000)
 2000-09-01
10 Reliability of ultrathin gate oxides for ULSI devices
 1999-05-01
11 INTERFACE-TRAP EFFECT ON GATE INDUCED DRAIN LEAKAGE CURRENT IN SUBMICRON N-MOSFETS
 1994-12-01
12 INVESTIGATIONS ON THE COMPOSITIONAL NONUNIFORMITY OF SELECTIVELY GROWN GAXIN1-XP BY LP-MOCVD USING EDMI, TMI, TEG, AND TMG AS GROUP-III SOURCES 1994-12-01
13 CHARACTERIZATION OF THE SI/SIGE HETEROJUNCTION DIODE GROWN BY ULTRAHIGH-VACUUM CHEMICAL-VAPOR-DEPOSITION 1994-10-15
14 ANALYSIS OF BILATERAL LATCH-UP TRIGGERING IN VLSI CIRCUITS 1994-02-01
15 A PSEUDOMORPHIC GAINP/INP MESFET WITH IMPROVED DEVICE PERFORMANCE
 1993-12-01
16 INSITU GROWTH OF SUPERCONDUCTING YBA2CU3O7-X THIN-FILMS 1991-09-01
17 IMPROVED ALGAAS/GAAS DOUBLE-BARRIER RESONANT TUNNELING STRUCTURES USING 2-DIMENSIONAL SOURCE ELECTRONS 1991-01-15
18 MBE GROWN UNDOPED SUPERLATTICE GATE AND MODULATION-DOPED BUFFER STRUCTURE FOR POWER FET APPLICATIONS
 1989-06-01
19 FABRICATION OF ZN-SI SCHOTTKY-BARRIER DIODE BY CONTROLLING SUBSTRATE TEMPERATURE DURING EVAPORATION 1973-01-01

Patents

序號
No.		 標題
Title		 著作日期
Date
1 超晶格結構的太陽能電池
 2014-10-01
2 半導體元件及其製作方法
 2014-02-16
3 具有三五族通道及四族源汲極之半導體裝置及其製造方法
 2013-12-11
4 電阻式隨機存取記憶體以及其製作方法
 2013-10-11
5 於矽基板上形成三族氮化物半導體磊晶層的方法
 2012-12-11
6 發光二極體結構及其製造方法
 2012-04-21
7 於半導體基板上形成三族氮化物半導體層的方法
 2011-11-01
8 超晶格結構的太陽能電池
 2011-08-16
9 具有三五族通道及四族源汲極之半導體裝置及其製造方法
 2011-06-01
10 三五族半導體元件之歐姆接觸電極及其製造方法
 2011-05-01
11 電阻式隨機存取記憶體以及其製作方法
 2011-05-01
12 OHMIC CONTACT OF III-V SEMICONDUCTOR DEVICE AND METHOD OF FORMING THE SAME
 2011-04-21
13 低溫多晶體材料及其製造方法
 2010-05-01
14 發光二極體結構及其製造方法
 2009-11-16
15 Light emitting device and fabrication method therefor
 2009-11-12
16 於半導體基板上形成三族氮化物半導體層的方法
 2009-04-16
17 Method for forming III-nitrides semiconductor epilayer on the semiconductor substrate
 2009-04-16
18 於矽基板上形成三族氮化物半導體磊晶層的方法
 2009-02-16
19 在矽（110）基板上設有壓縮應變矽鍺通道之N型金氧半電晶體架構
 2008-12-01
20 Architecture of a n-type metal-oxide-semiconductor transistor with a compressive strained silicon-germanium channel fabricated on a silicon (110) substrate
 2007-09-06
21 Growth of GaAs expitaxial layers on Si substrate by using a novel GeSi buffer layer
 2007-06-14
22 具有防止源汲極區摻雜離子在接面區外擴散的電晶體結構及其製作方法
 2007-04-01
23 具有防止源汲極區摻雜離子在接面區外擴散的電晶體結構及其製作方法
 2006-08-21
24 低溫多晶體材料及其製造方法
 2006-05-01
25 Growth of GaAs epitaixial layers on Si substrate by using a novel GeSi buffer layer
 2005-02-03
26 在矽晶片上成長鍺薄膜之方法 2005-02-01
27 在矽鍺磊晶片上成長砷化鎵磊晶之方法 2005-02-01
28 在矽晶片上成長鍺薄膜之方法
 2004-09-11
29 在矽鍺磊晶片上成長砷化鎵磊晶之方法
 2004-09-11
30 具高能隙偏移層結構之薄膜場效電晶體元件
 2001-06-23

Plan

序號
No.		 標題
Title		 著作日期
Date
1 磁電耦合之薄膜電晶體二極體之效應( II ) 2014
2 具有奈米級微結構表面之高亮度垂直式氮化鎵發光二極體元件製作(II)-總計畫暨子計畫一：利用磊晶結構優化改善高功率發光二極體的效率下降(II) 2013
3 磁電耦合之薄膜電晶體二極體之效應(I) 2013
4 新穎超薄主動層P型通道雙電晶體非揮發性記憶體 2012
5 新型高效綠能薄膜矽鍺太陽電池之研發( II ) 2012
6 具有奈米級微結構表面之高亮度垂直式氮化鎵發光二極體元件製作-總計畫暨子計畫一：利用磊晶結構優化改善高功率發光二極體的效率下降(I) 2012
7 新穎高亮度發光二極體結構成長與製作(II) 2011
8 新型高效綠能薄膜矽鍺太陽電池之研發( I ) 2011
9 新穎高亮度發光二極體結構成長與製作(I) 2010
10 整合MBE與MOCVD磊晶技術於三族氮化物高頻功率電晶體磊晶結構之開發(III) 2010
11 新型高效綠能薄膜矽鍺太陽電池之研發 2009
12 新穎非揮發性奈米點記憶體在薄膜電晶體上的製作與研究
 2009
13 整合MBE與MOCVD磊晶技術於三族氮化物高頻功率電晶體磊晶結構之開發(II) 2009
14 新穎非揮發性奈米點記憶體在薄膜電晶體上的製作與研究 2008
15 整合MBE與MOCVD磊晶技術於三族氮化物高頻功率電晶體磊晶結構之開發(I) 2008
16 利用Cat-MBE 技術研究III族氮化物材料之成長及元件製作(III) 2007
17 新穎非揮發性奈米點記憶體在薄膜電晶體上的製作與研究 2007
18 晶片系統國家型科技計畫辦公室維運計畫 2006
19 系統面板非揮發性記憶體之製作(II) 2006
20 利用Cat-MBE 技術研究III族氮化物材料之成長及元件製作(II) 2006
21 利用Cat-MBE 技術研究III族氮化物材料之成長及元件製作(I) 2005
22 系統面板非揮發性記憶體之製作(II) 2005
23 晶片系統國家型科技計畫-計畫辦公室運作計畫
 2005
24 系統面板關鍵技術之開發---總計畫(I)
 2004
25 晶片系統國家型科技計畫辦公室運作計畫 2004
26 國家矽導計畫新興研發計畫 2004
27 生技產業數位化資源共享機制之研究
 2004
28 系統面板關鍵技術之開發---子計畫三:系統面板非揮發性記憶體之製作研究(I)
 2004
29 晶片系統國家代表團海外舉辦國際雙邊會議及相關行程內容
 2004
30 國家矽導推動計畫(II) 2003
31 複晶矽鍺與MILC在低溫複晶矽薄膜電晶體上之應用(III)---總計畫
 2003
32 複晶矽鍺與MILC在低溫複晶矽薄膜電晶體上之應用(III)---子計畫III：MILC低溫複晶矽薄膜電晶體之退火製程開發、新穎結構及小尺寸元件之製作及研究
 2003
33 晶片系統國家型科技計劃<辦公室設置與運作計劃>(II)
 2003
34 超薄本體之絕緣層上矽快閃記憶體元件
 2003
35 複晶矽鍺與MILC在低溫複晶矽薄膜電晶體上之應用---總計畫(II) 2002
36 複晶矽鍺與MILC在低溫複晶矽薄膜電晶體上之應用---子計畫III:MILC低溫複晶矽薄膜電晶體之退火製程開發、新穎結構及小尺寸元件之製作及研究(II) 2002
37 申請美西參訪專案費用---蔡政委召集---SoC設計技術人才引進及台灣SoC設計園區推廣美西參訪 2002
38 晶片系統國家型科技計劃<辦公室設置與運作計劃>(I)
 2002
39 以四埠量測系統量測射頻電晶體特性並製作其等效電路模型
 2002
40 複晶矽鍺與MILC在低溫複晶矽薄膜電晶體上之應用---總計畫(I) 2001
41 赴日參加中日微電子國際專題研討會 2001
42 複晶矽鍺與MILC在低溫複晶矽薄膜電晶體上之應用---子計畫III：MILC低溫複晶矽薄膜電晶體之退火製程開發、新穎結構及小尺寸元件之製作及研究(I) 2001
43 矽鍺源/汲極金氧半電晶體及電感在射頻應用之研究(III)
 2001
44 晶片系統國家型科技計畫規劃 2001
45 超高真空化學氣相沉積低溫新穎複晶矽薄膜電晶體之製作與可靠度的研究---總計畫(II) 2000
46 超高真空化學氣相沉積低溫新穎複晶矽薄膜電晶體之製作與可靠度的研究---總計畫 (III)
 2000
47 超高真空化學氣相沉積低溫新穎複晶矽薄膜電晶體之製作與可靠度分析---子計畫三：超高真空化學氣相沈積新穎複晶矽薄膜電晶體之低溫閘極介電層與新結構之研究(III) 2000
48 矽鍺源/汲極金氧半電晶體及電感在射頻應用之研究(I) 2000
49 矽鍺源/汲極金氧半電晶體及電感在射頻應用之研究(II) 2000
50 超高真空化學氣相沈積低溫新穎複晶矽薄膜電晶體之製作與可靠度的研究---總計畫(I) 1999
51 超高真空化學氣相沈積低溫新穎複晶矽薄膜電晶體之製作與可靠度的研究---子計畫III：超高真空化學氣相沈積新穎複晶矽薄膜電晶體之低溫閘極介電層與新結構之研究 1999
52 光電及量子元件之研究(III)
 1999
53 光電及量子元件之研究 1998
54 產學合作計畫：深次微米元件技術開發 (III) 1998
55 產學合作計畫：深次微米元件技術開發(II) 1997
56 光電及量子元件之研究 1997
57 矽與矽鍺材料及元件之發展---子計畫二：矽與矽鍺之短通道MOSFET's 1997
58 矽與矽鍺材料及元件之發展---總計畫 1997
59 矽與矽鍺之短通道MOSFET元件發展 1996
60 深次微米元件技術開發---產學合作計畫(I) 1996
61 異質接面雙載子電晶體結構之探討及其在高速無線電數據機之應用 1996
62 次微米砷化銦鎵假晶高電子遷移率場效應電晶體之研究 1995
63 次微米元件技術開發---產學合作計畫(III) 1995
64 利用超高真空化學氣相沈積法成長多晶矽與矽鍺及其元件應用 1994

Proceedings Paper

序號
No.		 標題
Title		 著作日期
Date
1 Photoluminescent Study of High Indium Content Nanopyramid Light Emitting Diodes 2013-01-01
2 A Superconducting Magnetization System With Hybrid Superconducting Wire for the Study and Application of Superconductivity
 2012-06-01
3 Electrically driven nanoarrow array green LED
 2012-01-01
4 Low efficiency droop of InGaN/GaN blue LEDs with super-lattice active structure
 2012-01-01
5 Lasing action in gallium nitride photonic quasicrystal nanorod arrays
 2012-01-01
6 Reduction of efficiency droop in InGaN-Based UV Light-Emitting Diodes with InAlGaN Barrier
 2012-01-01
7 Investigation of emission polarization and strain in InGaN/GaN multiple quantum wells on nanorod epitaxially lateral overgrowth templates
 2012-01-01
8 ROBUST INTERFERENCE CHANNEL TRANSMISSION USING SPARSITY ENHANCED MISMATCH MODEL 2012-01-01
9 Efficiency and droop improvement in InGaN/GaN light-emitting diodes by selectively carrier-distribution manipulation 2012-01-01
10 Low temperature synthesis and electrical characterization of germanium doped Ti-based nanocrystals for nonvolatile memory
 2011-11-30
11 Investigation statistics of bipolar multilevel memristive mechanism and characterizations in a thin FeO(x) transition layer of TiN/SiO(2)/FeO(x)/Fe structure
 2011-09-01
12 High quality vertical light emitting diodes fabrication by mechanical lift-off technique
 2011-01-01
13 Highly Efficient InGaN-Based Light Emitting Devices grown on Nanoscale Patterned Substrates by MOCVD
 2011-01-01
14 ENERGY CONSUMPTION FORECASTING IN TAIWAN BASED ON ARIMA AND ARTIFICIAL NEURAL NETWORKS MODELS 2011-01-01
15 Reproducible resistance switching of a relatively thin FeO(x) layer produced by oxidizing the surface of a FePt electrode in a metal-oxide-metal structure 2010-12-30
16 InAs-Channel High-Electron-Mobility Transistors for Ultralow-Power Low Noise Amplifier Applications
 2009-04-01
17 Morphology and optical properties of zinc oxide thin films grown on Si (100) by metal-organic chemical vapor deposition
 2009-01-01
18 Analysis of temperature effects on high-frequency characteristics of RF lateral-diffused metal-oxide-semiconductor transistors
 2008-04-01
19 Design migration from peripheral ASIC design to area-I/O flip-chip design by chip I/O planning and legalization
 2008-01-01
20 An AlGaAs/InGaAs HEMT Grown on Si Substrate with Ge/GexSi1-x Metamorphic Buffer Layers 2008-01-01
21 InAs/In(1-x)Ga(x)As Composite Channel High Electron Mobility Transistors for High Speed Applications
 2008-01-01
22 A study on the meta-data design for long-term digital multimedia preservation
 2008-01-01
23 Investigation of Impact Ionization from In(x)Ga(1-x)As to InAs Channel HEMTs for High Speed and Low Power Applications 2008-01-01
24 Novel chirped multilayer quantum-dot lasers - art. no. 69970R
 2008-01-01
25 Characteristics of poly-Si TFT combined with nonvolatile SONOS memory and nanowire channels structure
 2007-12-15
26 Fort-nation of stacked nickel-silicide nanocrystals by using a co-mixed target for nonvolatile memory application
 2007-12-15
27 Formation of germanium nanocrystals by rapid thermal oxidizing SiGeO layer for nonvolatile memory application
 2007-12-15
28 Characterization of RF lateral-diffused metal-oxide-semiconductor field-effect transistors with different layout structures
 2007-04-01
29 Q-learning-based hybrid ARQ for high speed downlink packet access in UMTS
 2007-01-01
30 Product codes and parallel concatenated product codes
 2007-01-01
31 High-performance metal-induced lateral-crystallization polysilicon thin-film transistors with multiple nanowire channels and multiple gates
 2006-05-01
32 Annealing temperature effect on the performance of nonvolatile HfO2Si-oxide-nitride-oxide-silicon-type flash memory
 2006-05-01
33 A novel method for growing polycrystalline Ge layer by using UHVCVD
 2006-02-24
34 Attitudes towards peer assessment: a comparison of the perspectives of pre-service and in-service teachers
 2006-02-01
35 Frontiers of nano-bio system 2006-01-01
36 High-performance In0.52Al0.48As/In(0.6)Ga(0.)4As power metamorphic HEMT for Ka-band applications
 2006-01-01
37 A CMOS distributed amplifier with current reuse optimization 2006-01-01
38 Design migration from peripheral ASIC design to area-10 flip-chip design by chip I/O planning and legalization 2006-01-01
39 Characterization and modeling of RF MOSFETs under hot carrier stress and oxide breakdown 2006-01-01
40 Noise parameters computation of microwave devices using genetic algorithms 2005-07-01
41 Impact of post-deposition-annealing on the electrical characteristics of HfOxNy gate dielectric on Ge substrate
 2005-06-01
42 Hot-carrier induced degradations on RF power characteristics of SiGe heterojunction bipolar transistors
 2005-06-01
43 An X-band front-end module using HTS technique for a commercial dual mode radar
 2005-06-01
44 RF MOSFET characterization by four-port measurement 2005-05-01
45 Fabrication of pattern-depended metal induced lateral crystallization polysilicon thin film transistors with NH3 plasma passivation effects 2005-01-01
46 2-bit poly-Si-TFT nonvolatile memory using hafnium oxide, hafnium silicate and zirconium silicate 2005-01-01
47 Learning Sequences Construction Using Ontology and Rules 2005-01-01
48 An analysis of base current effect on the anomalous dip of scattering parameter S(12) in SiGeHBTs 2005-01-01
49 Impact of hot carrier stress on RF power characteristics of MOSFETs 2005-01-01
50 Temperature dependence of thin-film transistors electrical characteristics with multiple nano-wire channels 2005-01-01
51 High-density MIM capacitors with HfO(2) dielectrics
 2004-12-22
52 Low-frequency noise in partially depleted SOI MOSFETs operating from linear region to saturation region at various temperatures
 2004-04-01
53 Optimal design of metal seated ball valve mechanism
 2004-02-01
54 High performance and high reliability polysilicon thin-film transistors with multiple nano-wire channels 2004-01-01
55 High performance multi-bit nonvolatile HfO2 nanocrystal memory using spinodal phase separation of hafnium silicate 2004-01-01
56 Characterization on ESD devices with test structures in silicon germanium RF BiCMOS process 2004-01-01
57 Hot-carrier induced degradations on RF power characteristics of SiGe heterojunction bipolar transistors 2004-01-01
58 Correlation between transmission-line-pulsing I-V curve and human-body-model ESD level on low temperature poly-Si TFT devices 2004-01-01
59 Low power CMOS wideband receiver design 2004-01-01
60 Bandpass filters with resistive attenuators being located at 2(nd) and 4(nd) spurious pass-bands 2004-01-01
61 Computation of noise parameters using genetic algorithms 2004-01-01
62 UV stability of high birefirngence liquid crystals
 2004-01-01
63 The national Si-Soft Project
 2003-06-30
64 A study of meandered microstrip coupler with high directivity 2003-01-01
65 Low RF loss and noise of transmission lines on Si substrates using an improved ion implantation process
 2003-01-01
66 Microwave coplanar filters on Si substrates 2003-01-01
67 Anomalous substrate current in polycrystalline silicon thin-film transistors 2003-01-01
68 Layout design of high-quality SOI varactor 2003-01-01
69 Application of a membrane bioreactor system for opto-electronic industrial wastewater treatment - a pilot study 2003-01-01
70 Novel planar, square-shaped, dielectric-waveguide, single-, and dual-mode filters
 2002-11-01
71 A W-spacer GOLD TFT with high performance and high reliability
 2002-09-26
72 Comparison of poly-Si films deposited by UHVCVD and LPCVD and its application for thin film transistors
 2002-09-26
73 Process-related reliability issues toward sub-100 nm device regime 2002-01-01
74 Folded quarter-wave resonator filters with Chebyshev, flat group delay, or quasi-elliptical function response 2002-01-01
75 A study of boron diffusion from selectively grown epitaxial silicon-germanium into silicon during rapid thermal annealing 2002-01-01
76 ESD protection design to overcome internal damages on interface circuits of CMOS IC with multiple separated power pins 2002-01-01
77 Design of negative charge pump circuit with polysilicon diodes in a 0.25-mu m CMOS process 2002-01-01
78 A novel CPW interdigital filter 2001-01-01
79 Investigations of bulk dynamic threshold-voltage MOSFET with 65GHz "normal-mode" Ft and 220GHz "over-drive mode" Ft for RF applications 2001-01-01
80 A wireless video relay system at 28 GHz 2001-01-01
81 Thermal stability of PVD TiN gate and its impacts on characteristics of CMOS transistors 2001-01-01
82 Dimensional effects on the reliability of polycrystalline silicon thin-film transistors
 2000-08-01
83 Reliability of passivated P-type polycrystalline silicon thin film transistors
 2000-08-01
84 Deposition of polycrystalline Si and SiGe by ultra-high vacuum chemical molecular epitaxy
 2000-07-01
85 Study of boron effects on the reaction of Co and Si1-xGex at various temperatures
 2000-07-01
86 Interfacial reactions of Ni/Si0.76Ge0.24 and Ni/Si1-x-yGexCy by vacuum annealing and pulsed KrF laser annealing
 2000-06-01
87 Pulsed KrF laser annealing of Mo/Si0.76Ge0.24
 2000-06-01
88 Characterization of NH3 plasma-treated Ba0.7Sr0.3TiO3 thin films
 2000-04-01
89 Effects of O-2 plasma treatment on the electric and dielectric characteristics of Ba0.7Sr0.3TiO3 thin films
 2000-04-01
90 Copper electroplating for future ultralarge scale integration interconnection
 2000-03-01
91 Random Line selected Charge Accumulation (RLCA) CCD readout structure for high frame rate infrared image application
 2000-01-01
92 A novel approach for functional coverage measurement in HDL 2000-01-01
93 Plasma process induced damage in sputtered TiN metal gate capacitors with ultra-thin nitrided oxide
 2000-01-01
94 Improved plasma charging immunity in ultra-thin gate oxide with fluorine and nitrogen implantation
 2000-01-01
95 Broadband, planar, doubly balanced star mixers 2000-01-01
96 Design of low-capacitance bond pad for high-frequency I/O applications in CMOS integrated circuits 2000-01-01
97 New insights on RF CMOS stability related to bias, scaling, and temperature 2000-01-01
98 Optimization of short channel effect by arsenic P-Halo implant through polysilicon gate for 0.12uw P-MOSFET 2000-01-01
99 The novel precleaning treatment for selective tungsten chemical vapor deposition
 1999-11-01
100 Investigation on multilayered chemical vapor deposited Ti TiN films as the diffusion barriers in Cu and Al metallization
 1999-07-01
101 Breakdown characteristics of ultra-thin gate oxides caused by plasma charging 1999-01-01
102 A decade bandwidth resistive FET singly balanced MIC mixer 1999-01-01
103 Characterization of multilayered Ti/TiN films grown by chemical vapor deposition
 1998-11-02
104 Interfacial reactions of Ni on Si0.76Ge0.24 and Si by pulsed laser annealing
 1998-07-01
105 A novel fabrication technique of T-shaped gates using an EGMEA and PMIPK multilayer resist system and a single-step electron-beam exposure
 1998-03-01
106 High performance thin-film transistors with low-high-low band gap engineering
 1998-01-01
107 Voltage scaling and temperature effects on drain leakage current degradation in a hot carrier stressed n-MOSFET
 1998-01-01
108 Strategies of semiconductor industry in Taiwan 1998-01-01
109 Enhancement of Subnikov-de Haas oscillations by microwave radiation 1997-12-01
110 A refined model for ozone mass transfer in a semibatch stirred vessel
 1997-11-01
111 Stabilizing dielectric constant of fluorine-doped SiO2 film by N2O and NH3 plasma post-treatment
 1997-10-31
112 Characterization of TiN film grown by low-pressure-chemical-vapor-deposition
 1997-10-31
113 The role of a resist during O-2 plasma ashing and its impact on the reliability evaluation of ultrathin gate oxides
 1997-07-01
114 Suppression of boron penetration in P+-poly-Si gate metal-oxide-semiconductor transistor using nitrogen implantation
 1997-03-01
115 Investigation of the indium atom interdiffusion on the growth of GaN/InGaN heterostructures
 1997-03-01
116 High-power-density and high-efficiency atomic-planar-doped AlGaAs/InGaAs quantum-well power high-electron-mobility transistors for 2.4 V medium-power wireless communication applications
 1997-03-01
117 Local electric field effects in a SiGe quantum well investigated by photoluminescence
 1997-02-15
118 A model for photoresist-induced charging damage in ultra-thin gate oxides 1997-01-01
119 A simple fabrication process of T-shaped gates using a deep-UV/electron-beam/deep-UV tri-layer resist system and electron-beam lithography
 1996-12-01
120 Atomic force microscopy study on the surface structure of oxidized porous silicon
 1996-08-01
121 Disordered Si/SiGe superlattices grown by ultrahigh vacuum chemical vapor deposition
 1996-02-01
122 Light emission from the porous boron delta-doped Si superlattice
 1996-02-01
123 Double graded-gap hydrogenated amorphous silicon carbide thin-film light-emitting diode with composition-graded N layer and carbon-increasing P layer
 1996-02-01
124 Thermal stability and interaction between SiOF and Cu film 1996-01-01
125 Anomalous selective tungsten growth by chemical vapor deposition 1996-01-01
126 High-performance pseudomorphic power HEMTs for low-voltage wireless communication applications 1996-01-01
127 THE NOVEL NONLINEAR DC RESPONSE OF AG THIN-FILMS DEPOSITED ON POROUS SILICON - A FRACTAL MODEL EXPLANATION
 1995-11-15
128 FORMATION AND CHARACTERIZATION OF GAAS/AS SUPERLATTICE GROWN BY MOLECULAR-BEAM EPITAXY AT LOW SUBSTRATE-TEMPERATURE
 1995-05-01
129 CONTROL OF AS PRECIPITATION IN LOW-TEMPERATURE GAAS BY ELECTRONIC AND ISOELECTRONIC DELTA-DOPING
 1995-02-01
130 SURFACE-WAVE LEAKAGE PROPERTIES OF COPLANAR STRIPS 1995-01-01
131 SELECTIVE EPITAXIAL-GROWTH OF GAINP BY LP-MOCVD USING ETHYLDIMETHYLINDIUM, TRIMETHYLINDIUM, TRIMETHYLGALLIUM AND TRIETHYLGALLIUM AS GROUP-III SOURCES 1994-12-01
132 OZONOLYSIS OF 2,4-DICHLOROPHENOL IN A 2-PHASE SOLVENT WATER-SYSTEM 1994-01-01
133 HYDROGENATED AMORPHOUS-SILICON CARBIDE P-I-N THIN-FILM LIGHT-EMITTING-DIODES WITH BARRIER LAYERS INSERTED AT P-I INTERFACE
 1994-01-01
134 THE SELECTIVITY OF REACTIVE ION ETCH OF GA0.51IN0.49P/GAAS 1994-01-01
135 REACTIVE ION ETCH OF GAAS AND ALGAAS USING BCL3, SICL4 AND SF6, INSTEAD OF CCL2F2 1994-01-01
136 BOLOMETRIC RESPONSE OF HIGH-TEMPERATURE SUPERCONDUCTING THIN-FILMS 1993-12-01
137 MOLECULAR-BEAM EPITAXY GROWN GAAS BIPOLAR-UNIPOLAR TRANSITION NEGATIVE DIFFERENTIAL RESISTANCE POWER TRANSISTOR 1990-12-01

Thesis

序號
No.		 標題
Title		 著作日期
Date
1 具C軸結晶之氧化銦鎵鋅薄膜電晶體特性研究 2014
2 高壓元件LDMOS之特性分析與靜電放電防護設計 2014
3 新穎性奈米尺度多重閘極無接面電晶體之研究 2014
4 利用反射式兆赫光譜技術研究銀奈米線薄膜的光電特性 2013
5 以磁性濺鍍氧化鋅量子點嵌入於二氧化矽之尺寸效應探討 2013
6 嵌入圖案化的奈米磁鐵FePt的磁化作用在MIM結構上的特性 2013
7 多重閘極無接面金氧半場效應電晶體之物理，元件操作，及電路應用之研究 2013
8 Data Pattern對NAND快閃記憶體寫入擾動特性之研究 2013
9 二硒化鎢薄膜電晶體之製程與分析 2013
10 鈦酸鍶鋇在金屬-絕緣層-金屬結構中之磁電耦合特性 2013
11 利用氮化鋁/氮化矽作為閘極介電質及鈍化層之低電流崩潰氮化鎵金屬絕緣層半導體高速電子遷移率電晶體 2013
12 以多維整體經驗模態分析法進行激發光-螢光矩陣之內在螢光特徵擷取 2013
13 砷化銦通道之高電子遷移率空乏型與增強型之高頻與邏輯數位之元件特性研究 2013
14 堆疊型閘極介電質及銦鎵鋅氧化物雙通道結構應用於薄膜電晶體之研究 2013
15 次世代新穎氮化銦鎵/氮化鎵半極性奈米金字塔發光二極體之磊晶成長與元件特性之研究 2013
16 TSMC 2010-2014經濟附加價值及股價對應分析 2013
17 一個二階段混合式模糊時間序列預測模型 2013
18 應用無光罩式雷射蝕刻技術於網狀結構氮化鎵發光二極體元件之特性研究 2013
19 用於術後復健患者心電信號監測之非接觸式生理訊號量測系統設計 2012
20 半極化面氮化銦鎵/氮化鎵全彩奈米金字塔發光二極體之製作及特性研究 2012
21 在玻璃基板上製備摻鎵氧化鋅薄膜之表面形貌及光電性質的研究 2012
22 造成巨大磁場的奈米磁鐵FePt的磁化作用於三氧化二鋁介電質MIM結構中之特性 2012
23 造成巨大磁場的奈米磁鐵FePt的磁化作用於二氧化鉿介電質MIM結構中之特性 2012
24 使用氧化薄化奈米尺度片狀通道之具PI型閘極無接面薄膜電晶體之製作與特性 2012
25 三維的半極性{10-11}與非極性{10-10}平面核殼狀多重晶面量子井氮化銦鎵/氮化鎵光電元件之製作與特性研究 2012
26 應用於三維立體高畫質影像之三維動態記憶體 堆疊模型建造及管理單元 2012
27 具閘極包圍的奈米線通道電晶體及非揮發性記憶體 2012
28 脈衝光照及正向偏壓下對非晶氧化銦鎵鋅薄膜電晶體時間響應之研究 2012
29 垂直式(110)及(551)矽晶面環繞式閘極金氧半場效應電晶體之特性研究 2012
30 開發具成本效益之透明導電氧化物與能帶調變工程應用於 光伏元件 2012
31 以石墨烯薄膜作為飽和吸收體之被動鎖模摻鉺光纖雷射 2012
32 高效率近紫外光發光二極體元件製作 2011
33 職能理論探討：上市櫃公司發言人職能之個案研究 2011
34 研究以非液氦操作模式來設計超導充磁系統之低溫腔體
 2011
35 企業建立知識分享平台之研究－以A公司資訊部門為例 2011
36 圖形化藍寶石基板缺陷檢測之研究
 2011
37 溶藻弧菌胺醯組胺酸雙胜肽酶之晶體結構與突變分析
 2010
38 前瞻非揮發性電阻式記憶體元件之製作與特性研究 2010
39 信用風險模型修正時機之判定程序 2010
40 高輝度複合式導光板之背光模組應用 2010
41 廣角口腔內視鏡設計與研究
 2010
42 探討奈米面上銦氮化鎵與氮化鎵多重量子井包覆氮化鎵奈米柱之核殼結構的成長與發光性質 2010
43 利用奈米柱陣列空氣洞之氮化鎵發光二極體以改善光光萃取效率及化學蝕刻剝離技術 2010
44 磁性FePt薄膜MIM結構的崩潰電壓之特性 2010
45 景氣循環與策略投資 2010
46 超低功率之高頻砷化銦通道高電子遷移率電晶體之研究 2009
47 高分子近紅外光偵測器與應用
 2009
48 以動態網絡分析探討網路社群口碑與購買態度之關係：以批踢踢nb_shopping板為例
 2009
49 應用於非極性氮化鎵發光二極體元件以改善光萃取效率的極性選擇化學蝕刻 2009
50 磁性FePt奈米點MIS電容的異值崩潰電壓的特性與分析 2009
51 新穎環繞式閘極複晶矽奈米線於薄膜電晶體非揮發性記憶體之特性分析 2009
52 縮小化之寬頻耦合器
 2009
53 分子疊層堆積於自組裝幾丁聚醣奈米載體應用於抗癌藥物釋放之研究 2009
54 新穎的功率電晶體於熱載子效應之特性化分析及模型建立
 2008
55 氧空缺與相變化在氮化鈦/二氧化矽/鐵白金結構電阻式非揮發性隨機存取記憶體的影響
 2008
56 由麥克風陣列訊號合成出虛擬聆聽點的３Ｄ音訊
 2008
57 橫向擴散的射頻金氧半場效電晶體之特性分析與模型建立
 2008
58 表現登革熱二型病毒NS2,NS4基因及探討四環黴素衍生物對登革熱病毒的抑制作用
 2008
59 前瞻非揮發性奈米點記憶體元件之製作與特性研究
 2008
60 橫向擴散的射頻金氧半場效電晶體之佈局設計與熱特性分析
 2008
61 研究半導體和高介電絕緣體之介面以獲得高性能之鍺及三五族金氧半場效電晶體
 2008
62 用於平行渦輪碼之無衝突演算法
 2008
63 摻鐵釔錳氧化物的磁性研究
 2008
64 錳矽氧化物奈米點在非揮發性記憶體應用之研究
 2007
65 鎳鍺矽金屬奈米點在非揮發性記憶體元件製作及研究 2007
66 鈷矽氧化奈米點在非揮發性憶體應用之研究
 2007
67 The Study of Co-Planar Type Poly-Si EEPROM with Nano-Scale 2007
68 原子層沉積高介電係數氧化鋁閘極介電層之鍺金氧半場效電晶體電物性研究
 2007
69 先進金氧半場效電晶體閘極工程對改善元件特性及可靠度之研究
 2007
70 矽-基底之電晶體於高頻特性的可靠度分析
 2006
71 Small-Signal Modeling for SiGe HBTs Characterizations
 2006
72 量子幫浦效應、雜訊分析及電子失相行為於低維度傳輸系統
 2006
73 偏壓和幾何結構對矽鍺異質接面雙載子電晶體等效電路參數萃取的影響
 2006
74 利用分子束磊晶系統研究氮化鎵磊晶成長在藍寶石(0001)和矽(111)基板上
 2006
75 低溫複晶矽薄膜電晶體的電容模型及其頻率響應
 2006
76 利用矽鍺氧與矽鍺氮薄膜形成鍺奈米點在非揮發性記憶體應用之研究
 2006
77 半導體晶圓專業製造與設計產業潛力發展之多評準決策 2005
78 具奈米尺度及新穎結構的高效能低溫複晶矽薄膜電晶體的製作與特性研究
 2005
79 新穎雙功函數金屬閘極製程技術之研發
 2005
80 不同前處理對氮氧化鉿(鋯)閘極介電層於鍺基板之電物性研究
 2005
81 互補式金氧半導體技術於微波積體電路之應用 2005
82 以四埠散射參數量測射頻金氧半電晶體特性並製作其高頻等效電路模型
 2004
83 具有超薄高介電常數閘極介電層與應變矽鍺通道之先進深次微米金氧半場效電晶體研究
 2004
84 鐵電薄膜電滯曲線之新型態量測方法與逐層結晶之金屬/鐵電/絕緣/半導 結構之特性研究
 2004
85 超薄電漿氮化氧化層與高介電常數氧化鉿於閘極介電層之研究
 2004
86 含鉿之閘極介電層於鍺基板之電物性研究
 2004
87 氟離子佈植對低溫多晶矽薄膜電晶體之研究
 2004
88 使用完全鉬矽化之雙功函數金屬閘極技術
 2004
89 射頻金氧半場效電晶體於熱載子效應及氧化層崩潰時之特性化及模型化分析
 2004
90 新穎製程及新穎結構的複晶矽薄膜電晶體之可靠度研究
 2004
91 在矽基板上成長矽鍺、砷化鎵及硒化鋅異質結構之研究
 2004
92 深次微米部分空乏型矽在絕緣層上金氧半場效電晶體之低頻雜訊特性研究
 2003
93 具有超薄N2O退火氮化物閘極介電層與矽鍺通道之金氧半場效電晶體可靠度及通道厚度效應研究
 2003
94 鉿-鉬二元合金之線性功函數調變在奈米元件之應用
 2003
95 銅閘極搭配氮化鉿擴散阻擋層之金氧半電容研究
 2003
96 一種利用鉿矽酸鹽結晶化形成的新穎氧化鉿非揮發性奈米晶體記憶體
 2003
97 超薄氮化矽氧化層金氧半場效電晶體特性之研究 2002
98 複晶矽薄膜電晶體短通道效應之研究 2002
99 矽鍺異質接面雙載子電晶體在射頻應用之雜訊模型化及特性化分析 2002
100 複晶矽薄膜電晶體之特性、機制與新結構之研究 2002
101 矽在絕緣層上N型金氧半場效電晶體在射頻應用之製程研究 2001
102 矽鍺在複晶矽薄膜電晶體上的應用 2001
103 互補式金氧半元件之射頻特性研究 2001
104 先進深次微米金氧半導體場效電晶體基極與源/汲極工程之研究 2001
105 鈷與矽鍺的反應機制與研究 2000
106 先進深次微米金氧半場效電晶體基極與閘極工程之研究 2000
107 紅外線影像應用之影像讀取電路設計及矽化鉑偵檢元件研製 2000
108 小尺寸薄膜電晶體之研究 2000
109 氮化鈦金屬閘互補式金氧半元件之研製與分析 2000
110 閘極結構對矽在絕緣層上動態啟始電壓N型金氧半場效電晶體的影響 2000
111 低高低能隙結構之氫化微晶矽薄膜電晶體 1999
112 高品質動態隨機存取記憶體記憶胞之電容量及記憶時間研究 1999
113 薄膜電晶體的尺寸效應與新結構之研究 1999
114 功率放大器單石微波積體電路設計 1999
115 以非等向濕式蝕刻製作微結構之研究 1999
116 深次微米矽在絕緣層上N型金氧半場效電晶體之研究 1999
117 利用超高真空化學氣相沉積系統製造複晶矽電晶體之研究 1999
118 超薄閘極氧化層之製程相關可靠度研究 1999
119 利用超高真空化學分子磊晶系統成長複晶矽鍺閘極的正型金氧半電晶體之製程研究 1999
120 利用超高真空化學分子磊晶系統成長單晶矽鍺源/汲極的正型金氧半電晶體之相關製程研究 1999
121 元件尺寸對複晶矽薄膜電晶體效能之研究 1998
122 低介電常數材料在積體電路上之應用研究 1998
123 多晶矽閘極滲雜濃度對以超薄氧化層製作的深次微米元件可靠度之研究 1998
124 超薄氧化層在金屬閘和多晶矽閘電容中特性的研究 1998
125 台鐵經營管理制度之研究 1997
126 我國半導體產業競爭優勢 -積體電路製造廠商經營策略之探討 1997
127 低介電常數材料與金屬（鎢、鈦與氮化鈦）化學氣相沈積在積體電路上的應用與研究 1997
128 以電漿輔助化學氣相沉積法製造之高性能氫化非晶矽薄膜元件 1996
129 電漿製程產生的天線效應對以超薄氧化層製作的深次微米元件可靠度之影響 1996
130 超高真空化學氣相沉積系統成長之矽與矽鍺量子井結構物理及其元件應用 1996
131 利用超高真空化學分子磊晶系統進行低溫矽選擇性磊晶成長及氣相源摻雜之研究 1996
132 熱阻式熱偵檢元件之矽微細加工結構研究 1996
133 選擇性鎢化學沈積法中氟對閘極氧化層的影響 1996
134 利用多晶矽鍺硼為源之固相擴散法形成超淺P型接面的研究 1996
135 低介電常數材料特性分析與研究 1996
136 超高真空化學氣相沉積系統成長之矽與矽鍺量子井結構物理及其元件應用 1996
137 適用於深次微米金氧半場效電晶體的低溫製程之研究 1995
138 電漿製程對元件中超薄氧化層的傷害 1995
139 矽/矽鍺異質接面雙極性電晶體之研究 1995
140 STUDIES OF SI╱SIGE HETEROJUNCTION BIPOLAR TRANSISTORS 1995
141 表面通道P型金氧半場效電晶體之硼穿透效應及閘極結構之研究 1994
142 分子束磊晶成長低溫砷化鎵與相關化合物半導體及其元件應用 1994
143 電子迴旋共振低溫氧化及低熱能退火之研究 1994
144 利用超高真空化學氣相沉積成長P型通道矽鍺調變攙雜及δ攙雜場效電晶體 1994
145 利用超真空化學氣相沉積成長複晶矽薄膜電晶體特性之研究 1994
146 原子層結構p型金氧半電晶體在0.1微米以下最佳化模擬的研究 1994
147 化學機械研磨平坦化技術應用於積體電路之研究 1994
148 深次微米互補金氧半元件所需超薄閘極介電質層可靠度之研究 1994
149 分裂閘極式快閃記憶晶胞的可靠性研究 1994
150 一個應用於變速度資料傳輸之頻道管理器 1994
151 半導體非揮發性記憶體元件的可程式性及可靠性的研究 1994
152 電漿輔助化學氣相沈積低溫絕緣層之特性研究及其在薄膜電晶體上之應用 1993
153 電漿輔助化學氣相沉積之矽鍺薄膜再結晶處理以及材料特性研究 1993
154 BF2表面反攙雜植入對N型金氧半場效電晶體之效應研究 1993
155 不同的閘極微結構對於P型複晶閘極P型金氧半電容的硼穿透效應之研究 1993
156 一種存在於互補式超大型積體電路的雙橫向鎖住行為之探討 1993
157 氟與雜質對矽化鎢製程的影響 1993
158 利用超高真空化學氣相沈積系統成長矽與矽鍺超晶格及其在發光元件之應用 1993
159 以分子束磊晶方法研究砷化鎵/砷化鋁鎵異質接面雙載子電晶體 1993
160 以大傾鈄角度離子佈植汲極製程改進深次微米金氧半電晶體之熱載子可靠度之研究 1993
161 二維系統中時變和非時變特性的研究及其在半導體雷射上之應用 1993
162 以有機金屬氣相磊晶成長法成長磷化銦鎵及其在異質接面場效電晶體上之應用 1993
163 以低壓有機金屬化學氣相磊晶法成長超高碳摻雜砷化鎵之特性研究 1993
164 非晶矽薄膜電晶體之研製 1992
165 超大型積體電路的類比電容中電壓與溫度係數所建立一新精確模擬預估 1992
166 P□型多晶矽閘在P型金氧半場效電晶體上的研究 1992
167 一種存在於互補式超大型積體電路的雙橫向鎖住行為之探討 1992
168 非晶矽薄膜電晶體之研製 1992
169 磷化銦基體金屬-半導體場效電晶體之製造及其特性 1991
170 電漿輔助化學氣相沈積法成長的二氧化矽及非晶矽薄膜電晶體 1991
171 以大傾斜角度植入對n□在閘極覆蓋下LDD特性之研究 1991
172 四百萬位元可抹除可規劃唯讀記憶體在資料持久力方面的研究 1991
173 加瑪射線照射半氧氮氧半之研究 1991
174 以低壓有機金屬化學氣相沈積法成長之磷化鎵錮蕭特基接觸之研究 1991
175 選擇性無電鍍銅及其應用 1991
176 以低溫超高真空化學汽相沈積法所製元件特性 1991
177 超大型積體電路中類比電容的製造與模擬 1991
178 以有機金屬化學氣相沈積法成長磷化鋁鎵銦及材料應用 1991
179 Investigations of gate/n□ overlapped LDD large-tilt-angle implantation 1991
180 雙障壁共振穿透結構之物理及元件運作之研究 1990
181 以快速升溫化學束磊晶法成長矽鍺磊晶及其特性分析 1989
182 選擇性無電鍍鉑及其應用 1989
183 LDD NMOSFET對熱載子效應可靠性之最佳化 1989
184 P型金氧半場效電晶體熱載子效應之研究 1989
185 P型複晶矽閘極在P型金氧半場效電晶體特性之研究 1989
186 可抹除可規劃 讀記憶體特性的研究 1989
187 以分子束磊晶成長鍺矽晶膜之特性分析 1989
188 以有機金屬汽相磊晶成長磷化銦鎵與砷化鎵異質接面 1989
189 以有機金屬汽相沈積法成長磷化銦鎵磊晶膜及其特性分析 1989
190 汲極微電量摻雜金氧半場效電晶體在直流下的劣化機構及其最佳化趨勢 1989
191 運用實驗計劃法及統計分析求P型金氧半特性之最佳化 1989
192 磷化銦鎵與砷化鎵超晶格之能帶計算 1989
193 雙層複晶矽間介電質之研究 1989
194 MOS之LDD在閘極覆蓋下的特性研究 1989
195 SONOS可程式可抹除唯讀記憶元件之電氣特性 1989
196 以有機金屬化學氣相沈積法成長磷化鎵銦/ 砷化鎵高電子遷移率電晶體之研究 1989
197 以液相磊晶法在磷化銦基板上成長砷化銦鎵p-i-n 感光二極體 1989
198 次微米選擇性無電鍍鉑在矽化鈦上之研究 1989
199 矽和矽鍺的低溫磊晶 1989
200 雙層複晶矽間以SiO ╱Si N ╱SiO 為介電質之研究 1989
201 非晶矽氫和非晶矽碳氫在密接型影像感測器之應用 1989
202 對金屬和非晶矽接觸及非晶矽內狀態密度的探討 1989
203 MOS之LDD在閘極覆蓋下的特性研究 1989
204 以Sio /Si N /SiO 為電介質的雙複晶矽電容的電性研究 1988
205 二維高濃度砷化鎵金半場效電晶體模擬 1988
206 二維電子雲場效電晶體的分析與模擬 1988
207 以分子束磊晶研製金半場效電晶體 1988
208 兩種次微米超大型積體電路中的元件隔離法之比較 1988
209 金氧半電晶體閘極電容的測量以及模式的建立 1988
210 非晶矽光二極體之研究 1988
211 非晶矽與金屬接觸之探討 1988
212 異質結構元件電容電壓剖面模擬 1988
213 以Sio /Si N /SiO 為電介質的雙複晶矽電容的電性研究 1988
214 台北市新動物園─副都心─市中心捷運系統之研究 1980
215 台北市新動物園─副都心─市中心捷運系統之研究 1980
216 金屬/ 負一菱化鎵接觸系統 1979
217 高耐壓功率電晶體的設計與製造 1974
218 金屬半導體介面之研究 1970
219 半導體表面之研究 1965
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