Browsing by Author "CHAN, SH"

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BACK-GATING EFFECTS ON THE GA0.1IN0.8P/INP/INGAAS HIGH-ELECTRON-MOBILITY TRANSISTOR
(1995-07-01)
LIN, KC
;
CHANG, CY
;
WU, CC
;
CHEN, HD
;
CHEN, PA
Pseudomorphic GaInP/InP/InGaAs high electron mobility transistors (HEMT) with improved Schottky contacts and excellent electrical characteristics are grown by low-pressure metal-organic chemical vapor deposition (LP-MOCVD) on the InP substrate. These HEMTs with 1.71 mu m gate length have an average extrinsic transconductance of 225 mS/mm. The back-gating effects of this device structure are investigated for the first time in this structure. Both positive and negative bias are applied to the ohmic and Schottky back-gate contacts of these devices. The positive back-gate bias has no effect on the drain current or the output transconductances of these devices. The effect of the negative back-gate bias is very similar to that when negative bias is applied on the gate of these HEMTs.
CARBON INCORPORATION DURING GROWTH OF GAAS BY TEGA-ASH3 BASE LOW-PRESSURE METALORGANIC CHEMICAL-VAPOR-DEPOSITION
(1993-06-01)
CHEN, HD
;
CHANG, CY
;
LIN, KC
;
CHAN, SH
;
FENG, MS
Heavily carbon-doped GaAs (1 X 10(18) approximately 1 X 10(20) cm-3) grown by low-pressure metalorganic chemical vapor deposition using triethylgallium and arsine as sources and liquid carbon-tetrachloride (CCl4) as dopant has been investigated. The carrier concentration was verified at various growth temperatures, V/III ratios, and CC]4 flow rates. Dopant concentration first increased from 550-degrees-C and reached a maximum at 570-degrees-C growth temperature (T(g)) and then decreased monotonously. Carbon incorporation was strongly enhanced when the V/III ratio was less than 30 at T(g) = 590-degrees-C or less than 40 at T(g) = 630-degrees-C. Hole concentration increased and then decreased as CCl4 flow rate increased. Growth rate of layers decreased as growth temperature and flow rate Of CCl4 increased. The doping efficiency of epitaxial layers grown on the (100) substrate was higher than that on the 2-degrees off toward [110] misoriented substrate. Carbon-doped GaAs films had higher Hall mobility than zinc-doped GaAs films at high doping levels due to less self-compensation. The highest dopant concentration in this system was 2.3 X 10(20) cm-3 at T(g) = 580-degrees-C and V/III = 10.
CATION SOURCE DEPENDENCE OF GA0.5IN0.5P GROWTH-RATE BY LOW-PRESSURE METALORGANIC CHEMICAL-VAPOR-DEPOSITION
(1994-06-15)
WU, JW
;
CHANG, CY
;
LIN, KC
;
CHAN, SH
;
CHEN, HD
The Ga0.5In0.5P epilayer was grown by low-pressure metalorganic chemical vapor deposition. Trimethylgallium and triethylgallium were used as the gallium source's, while trimethylindium and ethyldimethylindium were used as the indium sources. The use of triethylgallium incorporated with trimethylindium enhanced the growth rate of Ga0.5In0.5P as compared to incorporation with ethyldimethylindium. While the use of trimethylgallium incorporated with ethyldimethylindium enhanced the growth rate of Ga0.5In0.5P significantly, as compared to incorporation with trimethylindium.
DOPING OF INGAP EPITAXIAL LAYERS GROWN BY LOW-PRESSURE METAL-ORGANIC CHEMICAL-VAPOR-DEPOSITION
(1993-06-20)
WU, CC
;
LIN, KC
;
CHAN, SH
;
FENG, MS
;
CHANG, CY
DEZn and H2Se were utilized as p- and n-type dopant sources for the growth in InGaP layers by low pressure metal-organic chemical vapor deposition (LP-MOCVD). The decrease in intensity of the extra spots of electron diffraction indicates that disordering is induced by the zinc doping. Streaky and wavy diffraction patterns demonstrate the formation of anti-phase domains caused by the Se dopant incorporation. The growth rate of the grown layer is reduced by more than 10% owing to the dopant incorporation. A photoluminescence emission energy difference of 141 meV between undoped and Zn-doped (5.8 x 10(18) cm-3) InGaP was obtained. The effects of doping on disordering, degeneracy of quasi-Fermi level and lattice constant reduction of grown layers were included in this study.
INFLUENCE OF METALORGANIC SOURCES ON THE COMPOSITION UNIFORMITY OF SELECTIVELY GROWN GAXIN1-XP
(1994-09-01)
CHAN, SH
;
CHANG, CY
;
SZE, SM
;
交大名義發表
;
電子工程學系及電子研究所
In this work, selective epitaxial growth (SEG) of GaInP on a GaAs substrate patterned with silicon nitride is performed by low-pressure metalorganic chemical vapor deposition (LP-MOCVD). The group III sources employed are the combinations of triethylgallium and ethyldimethylindium (TEG+EDMI), triethylgallium and trimethylindium (TEG+TMI), and trimethylgallium and trimethylindium (TMG+TMI). Completely selective epitaxy can be achieved at a growth temperature of 675 degrees C and a growth pressure of 40 Torr when TEG+EDMI is used; while completely selective epitaxy can be achieved under the conditions of 650 degrees C and 40 Torr when the other two sources are used. For the three sources, GaP and InP incorporation increase near the edges of the patterns due to the extra flux of Ga-containing and In-containing species from the region of masking film. Different combinations of group III sources lead to different extents of these incorporations due to the decomposition and diffusion characteristics of the precursors.
INVESTIGATIONS ON THE COMPOSITIONAL NONUNIFORMITY OF SELECTIVELY GROWN GAXIN1-XP BY LP-MOCVD USING EDMI, TMI, TEG, AND TMG AS GROUP-III SOURCES
(1994-12-01)
CHAN, SH
;
CHANG, CY
;
SZE, SM
;
交大名義發表
;
電子工程學系及電子研究所
MAGNESIUM DOPING OF INGAALP GROWN BY LOW-PRESSURE METALORGANIC CHEMICAL-VAPOR-DEPOSITION
(1994-09-05)
WU, CC
;
CHANG, CY
;
CHEN, PA
;
CHEN, HD
;
LIN, KC
Bis(cyclopentadienyl) magnesium, CP2Mg, was used as a magnesium dopant in the InGaAlP layers by low-pressure metalorganic chemical vapor deposition. The hazy surface morphology of heavily doped InGaAlP layers is significantly improved by using magnesium dopant instead of the conventional zinc dopant. We demonstrate that the effective doping efficiency of magnesium is two orders of magnitude higher than that of zinc dopant in the heavily doped InGaAlP layer grown at 720-degrees-C.
SELECTIVE EPITAXIAL-GROWTH OF GAINP BY LOW-PRESSURE METAL-ORGANIC CHEMICAL-VAPOR-DEPOSITION USING ETHYLDIMETHYLINDIUM AS IN-SOURCE
(1994-10-24)
CHAN, SH
;
SZE, SM
;
CHANG, CY
;
LEE, WI
;
電子物理學系
We have demonstrated the feasibility of selective epitaxial growth (SEG) of GaInP using low-pressure metal-organic chemical-vapor deposition (LPMOCVD) with the combination of ethyldimethylindium (EDMIn) and triethylgallium (TEGa) as the group-III sources. Complete selective epitaxy can be achieved at a growth temperature of 675 degrees C and a growth pressure of 40 Torr. The deposition of Ga-rich polycrystalline GaInP on Si3N4 film occurs at lower temperatures. Although the incorporation efficiency of TEGa into GaInP is much lower than that of trimethylgallium, the combination of EDMIn and TEGa has been found to be a good candidate for SEG of GaInP. Low-temperature photoluminescence shows that the selectively grown epitaxial layer has good optical quality and is useful for light emitting device applications. (C) 1994 American Institute of Physics.
SELECTIVE EPITAXIAL-GROWTH OF GAINP BY LP-MOCVD USING ETHYLDIMETHYLINDIUM, TRIMETHYLINDIUM, TRIMETHYLGALLIUM AND TRIETHYLGALLIUM AS GROUP-III SOURCES
(1994-12-01)
CHAN, SH
;
SZE, SM
;
CHANG, CY
;
LEE, WI
;
電子物理學系
The present experiments demonstrate the epitaxial growth (EG) and selective epitaxial growth (SEG) of GaInP by low-pressure metalorganic chemical vapor deposition (LP-MOCVD) using ethyldimethylindium (EDMI), trimethylindium (TMI), trimethylgallium (TMG) and triethylgallium (TEG) as group III sources. In epitaxial growth of GaInP, the Ga incorporation efficiency using TEG+EDMI is found to be lower than those using other combinations. Completely selective epitaxy using TEGa + EDMIn can be achieved at a growth temperature of 675-degrees-C and at a growth pressure of 40 Torr, while other combinations (TEG + TMI, TMG + TMI, and TMG + EDMI) can achieve SEG of GaInP at 650-degrees-C. High resolution double-crystal X-ray measurements are used to investigate the compositional variation in the selectively epitaxial-grown area.
SEMIINSULATING IRON-DOPED INDIUM-PHOSPHIDE GROWN BY LOW-PRESSURE METAL ORGANIC-CHEMICAL VAPOR-DEPOSITION
(1993-03-01)
WU, CC
;
FENG, MS
;
LIN, KC
;
CHAN, SH
;
CHANG, CY
(C5H5)2Fe and Fe(CO)5 were used as the 3d transition-metal dopant sources in the growth of semi-insulating InP epitaxial layers by low-pressure metal-organic chemical vapour deposition (MOCVD). From the bright- and dark-field images of transmission electron microscopy (TEM) analysis, many precipitates were observed. Three extra peaks in the X-ray diffraction pattern were found. The peaks of band-band recombination, donor-acceptor pair recombination transitions and the recombination of donor-acceptor pair with one-phonon emission were observed in the short-wavelength range of low-temperature photoluminescence measurement. Three Fe-related peaks were observed at 0.7079, 0.6897 and 0.6683 eV. For a wide range (10-600) of In/Fe molar fraction, the resistivity remained at high values (about 10(8) OMEGA cm) and the highest resistivity appeared at 5 x 10(8) OMEGA cm for a 1 mum layer with a breakdown voltage of 9 V.
SILICON DELTA-DOPING OF GAINP GROWN BY LOW-PRESSURE METALORGANIC CHEMICAL-VAPOR-DEPOSITION
(1995-09-01)
WANG, CJ
;
WU, JW
;
CHAN, SH
;
CHANG, CY
;
SZE, SM
Silicon delta doping in GaInP material has been demonstrated by low-pressure metalorganic chemical vapor deposition (LP-MOCVD) and characterized by Hall-effect and capacitance-voltage (C-V) measurements. The mobility enhancement of delta-doped samples over their corresponding uniformly doped samples was observed. High sheet carrier density of N-S=1.21 x 10(13) cm(-2) could be obtained. A sharp carrier distribution profile with the full width at half maximum of 25 Angstrom has been achieved.
SILICON DELTA-DOPING OF GAINP GROWN BY LOW-PRESSURE METALORGANIC CHEMICAL-VAPOR-DEPOSITION
(1995-09-01)
WANG, CJ
;
WU, JW
;
CHAN, SH
;
CHANG, CY
;
SZE, SM
Silicon delta doping in GaInP material has been demonstrated by low-pressure metalorganic chemical vapor deposition (LP-MOCVD) and characterized by Hall-effect and capacitance-voltage (C-V) measurements. The mobility enhancement of delta-doped samples over their corresponding uniformly doped samples was observed. High sheet carrier density of N-S=1.21 x 10(13) cm(-2) could be obtained. A sharp carrier distribution profile with the full width at half maximum of 25 Angstrom has been achieved.
THE SELECTIVITY OF REACTIVE ION ETCH OF GA0.51IN0.49P/GAAS
(1994)
WU, JW
;
CHAN, SH
;
LIN, KC
;
CHANG, CY
;
CHANG, EY