INFLUENCE OF METALORGANIC SOURCES ON THE COMPOSITION UNIFORMITY OF SELECTIVELY GROWN GAXIN1-XP

Abstract

In this work, selective epitaxial growth (SEG) of GaInP on a GaAs substrate patterned with silicon nitride is performed by low-pressure metalorganic chemical vapor deposition (LP-MOCVD). The group III sources employed are the combinations of triethylgallium and ethyldimethylindium (TEG+EDMI), triethylgallium and trimethylindium (TEG+TMI), and trimethylgallium and trimethylindium (TMG+TMI). Completely selective epitaxy can be achieved at a growth temperature of 675 degrees C and a growth pressure of 40 Torr when TEG+EDMI is used; while completely selective epitaxy can be achieved under the conditions of 650 degrees C and 40 Torr when the other two sources are used. For the three sources, GaP and InP incorporation increase near the edges of the patterns due to the extra flux of Ga-containing and In-containing species from the region of masking film. Different combinations of group III sources lead to different extents of these incorporations due to the decomposition and diffusion characteristics of the precursors.