SEMIINSULATING IRON-DOPED INDIUM-PHOSPHIDE GROWN BY LOW-PRESSURE METAL ORGANIC-CHEMICAL VAPOR-DEPOSITION

Abstract

(C5H5)2Fe and Fe(CO)5 were used as the 3d transition-metal dopant sources in the growth of semi-insulating InP epitaxial layers by low-pressure metal-organic chemical vapour deposition (MOCVD). From the bright- and dark-field images of transmission electron microscopy (TEM) analysis, many precipitates were observed. Three extra peaks in the X-ray diffraction pattern were found. The peaks of band-band recombination, donor-acceptor pair recombination transitions and the recombination of donor-acceptor pair with one-phonon emission were observed in the short-wavelength range of low-temperature photoluminescence measurement. Three Fe-related peaks were observed at 0.7079, 0.6897 and 0.6683 eV. For a wide range (10-600) of In/Fe molar fraction, the resistivity remained at high values (about 10(8) OMEGA cm) and the highest resistivity appeared at 5 x 10(8) OMEGA cm for a 1 mum layer with a breakdown voltage of 9 V.