Browsing by Author "CHEN, CL"

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A LOW-COST RASTER ENGINE FOR VIDEO GAME, MULTIMEDIA PC AND INTERACTIVE TV
(1995-08-01)
CHEN, CL
;
LIANG, BS
;
JEN, CW
;
電子工程學系及電子研究所
;
Department of Electronics Engineering and Institute of Electronics
A low-cost Raster Engine (RE) is designed and implemented to improve the performance of 3D computer graphics and image composition application for video games, multimedia PCs and interactive TVs. Three operation modes: Gouraud and Phong shading algorithms, and image composition are incorporated in this chip. Modified digital differential analyzer (DDA), 2-level pipeline, and constant execution time for calculating cos(n) theta are proposed as the features of this design. The accelerator is implemented by 0.8 um SPDM CMOS VLSI technology and able to release more then 50% CPU loads.
A low-cost raster engine for video game, multimedia PC and interactive TV
(1995-01-01)
CHEN, CL
;
LIANG, BS
;
JEN, CW
;
電子工程學系及電子研究所
;
Department of Electronics Engineering and Institute of Electronics
A RASTER ENGINE FOR COMPUTER GRAPHICS AND IMAGE COMPOSITION
(1994)
CHEN, CL
;
LIN, CH
;
LEE, HR
;
JEN, CW
;
電子工程學系及電子研究所
BOND-STRUCTURE CHANGES OF LIQUID-PHASE DEPOSITED OXIDE (SIO2-XFX) ON N2 ANNEALING
(1995-02-20)
YEH, CF
;
CHEN, CL
;
LUR, W
;
YEN, PW
;
電子工程學系及電子研究所
CONTROLLING FLUORINE CONCENTRATION AND THERMAL ANNEALING EFFECT ON LIQUID-PHASE DEPOSITED SIO2-XFX FILMS
(1995-10-01)
YEH, CF
;
CHEN, CL
;
電子工程學系及電子研究所
;
Department of Electronics Engineering and Institute of Electronics
Silicon oxide (SiO2-xFx) with fluorine naturally incorporated can be prepared by the liquid-phase deposition (LPD) method at 15 degrees C. The fluorine is uniformly distributed in the bulk of the LPD oxide. The fluorine incorporation as well as the qualitative properties can be accurately controlled by varying the amount of H2O added. A high temperature process has considerable effect on the low temperature fluorinated oxide. FTIR and XPS spectra show that Si-F and SiO-H bonds can restructure with densification at higher thermal annealing temperature, and that restructuring is a function of temperature. Film densification with increasing temperature is also discussed in terms of Si-O-Si bond angle and Si-Si bond length.
EXPERIMENTAL COMPARISON OF OFF-STATE CURRENT BETWEEN HIGH-TEMPERATURE-PROCESSED AND LOW-TEMPERATURE-PROCESSED UNDOPED CHANNEL POLYSILICON THIN-FILM TRANSISTORS
(1993-10-01)
YEH, CF
;
YANG, TZ
;
CHEN, CL
;
CHEN, TJ
;
YANG, YC
Poly-Si thin-film transistors (TFT's) have a large off -state current that is unacceptable for pixel river application. To quickly establish an effective solution to reduce the off-state current, systematic comparison and clarification of the mechanisms of off-state current are still insufficient. We will concentrate on an experimental comparison of off -state current mechanisms between low-temperature-processed (LTP) and high-temperature-processed (HTP) poly-Si TFT devices. Since all the off-state currents are found to be divided into three regions in LTP and HTP poly-Si TFT's, they are attributable to a resistive current in region I (low gate bias), pure thermal generation in region II (low drain bias) and Frenkel-Poole emission in region III (high gate bias, drain bias).
LOW-TEMPERATURE-PROCESSED POLY-SI THIN-FILM TRANSISTORS USING SOLID-PHASE-CRYSTALLIZED AND LIQUID-PHASE-DEPOSITED GATE OXIDE
(1994-04-01)
YEH, CF
;
CHEN, CL
;
YANG, YC
;
LIN, SS
;
YANG, TZ
Poly-Si thin-film transistor (TFT) devices using solid-phase-crystallized and liquid-phase-deposited gate oxide are, for the first time, realized by low-temperature processes (LTP) (<625-degrees-C) for future LCDs and 3-D integrated circuits. The method of liquid-phase deposition of SiO2 (LPD-SiO2) is described. The physical, chemical and electrical properties of the new dielectric layer are clarified. The TFT (W/L = 200 mum/10 mum) having an on-off current ratio of 10(6) at V(D) = 5 V, a field-effect mobility of 15 cm2/V.s at V(D) = 0.1 V, a threshold voltage of 5.6 V, and a subthreshold swing of 1.6 V/decade, exhibits sufficient performance for pixel transistors. The field-effect mobility is strongly dependent on channel length. Effective passivation of defects by plasma hydrogenation will be very essential to achieve higher performance.
METHOD FOR MEASURING THE RETARDATION OF A WAVE PLATE
(1993-08-01)
SHYU, LH
;
CHEN, CL
;
SU, DC
;
交大名義發表
;
光電工程學系
An electro-optic modulator applied to a carrier frequency is used to measure the retardation of a wave plate. This method is not only suitable for any wave plate but also can be operated in real time.
MULTIPLE STUCK-FAULT DETECTION AND LOCATION IN MULTIVALUED LINEAR CIRCUITS
(1986-12-01)
CHEN, CL
;
DU, MW
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資訊工程學系
;
Department of Computer Science
NOVEL TECHNIQUE FOR SIO2 FORMED BY LIQUID-PHASE DEPOSITION FOR LOW-TEMPERATURE PROCESSED POLYSILICON TFT
(1993-08-01)
YEH, CF
;
LIN, SS
;
CHEN, CL
;
YANG, YC
;
電控工程研究所
A novel technique for SiO2 formation by liquid-phase deposition (LPD) at nearly room temperature for low-temperature processed (LTP) polysilicon thin-film transistor (poly-Si TFT) was developed. LPD-SiO2 film with a lower P-etch rate shows its dense structure. LPD-SiO2 also exhibits good electrical characteristics. LTP poly-Si TFT's with LPD-SiO2, as gate insulator have been fabricated and investigated. Their characteristics exhibit sufficient performance for pixel transistor in liquid crystal display (LCD).
PERFORMANCE AND OFF-STATE CURRENT MECHANISMS OF LOW-TEMPERATURE PROCESSED POLYSILICON THIN-FILM TRANSISTORS WITH LIQUID-PHASE DEPOSITED SIO2 GATE INSULATOR
(1994-02-01)
YEH, CF
;
LIN, SS
;
YANG, TZ
;
CHEN, CL
;
YANG, YC
Polysilicon thin-film transistors (poly-Si TFT's) with liquid phase deposition (LPD) silicon dioxide (SiO2) gate insulator were realized by low-temperature processes (< 620-degrees-C). The physical, chemical, and electrical properties of the new dielectric layer were clarified. The low-temperature processed (LTP) polylayer TFT's with W/L = 200 mum/10 mum had an on-off current ratio of 4.95 x 10(6) at V(D) = 5 V, a field effect mobility of 25.5 cm2/V.s at V(D) = 0.1 V, a threshold voltage of 6.9 V. and a subthreshold swing of 1.28 V/decade at V(D) = 0.1 V. Effective passivation of defects by plasma hydrogenation can improve the characteristics of the devices. The off-state current (I(L)) mechanisms of the tTP poly-Si TFT's were systematically compared and clarified. The I(L) is divided into three regions; the I(L) is attributable to a resistive current in region I (low gate bias), to pure thermal generation current in region II (low drain bias), and to Frenkel-Poole emission current in region III (high gate bias and drain bias).
ROOM-TEMPERATURE SELECTIVE GROWTH OF DIELECTRIC FILMS BY LIQUID-PHASE DEPOSITION
(1994-06-01)
YEH, CF
;
CHEN, CL
;
電子工程學系及電子研究所
;
Department of Electronics Engineering and Institute of Electronics
In multilevel interconnection processes, because thermal stress affects device characteristics and wiring reliability, low-temperature deposition has been required for interlayer dielectrics (SiO2). This research investigated high growth rate and selective growth conditions of room-temperature interlayer dielectrics formed using the liquid-phase deposition method. The dependence of deposition rate on growth temperature and H3BO3 concentration is confirmed, and a concentration of 3.8 mol l-1 of H2SiF6 is used to achieve a high deposition rate of 1250 angstrom h-1. The degree of supersaturation of silica of the immersing solution is found to define three ranges of growth conditions: the non-deposition range, selective deposition range, and conformal deposition range. A selective deposition model is proposed to clarify the mechanism of room-temperature selective SiO2 growth,
THE PHYSICOCHEMICAL PROPERTIES AND GROWTH-MECHANISM OF OXIDE (SIO2-XFX) BY LIQUID-PHASE DEPOSITION WITH H2O ADDITION ONLY
(1994-11-01)
YEH, CF
;
CHEN, CL
;
LIN, GH
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電子工程學系及電子研究所
;
Department of Electronics Engineering and Institute of Electronics
Silicon oxide formation was studied by a novel liquid phase deposition (LPD) method with H2O addition only at 35-degrees-C. The deposition rate could be controlled by varying the quantity of H2O added. The LPD-oxide was lightly oxygen-deficient. FTIR spectra and AES depth profiles indicate that a small amount of fluorine was incorporated into the oxide. The composition of LPD-oxide can be represented as SiO2-xFx. The physicochemical properties of LPD oxide were investigated, as was the behavior of fluorine in the oxide and the chemical reaction. A model for the LPD mechanism is proposed that satisfactorily explains all of the experimental phenomena observed.