Browsing by Author "Chen"

Now showing 1 - 20 of 42

Absolute time delay generating device
(2010-11-02)
Lee
;
Chen-Yi
;
Yu
;
Jui-Yuan
;
Yu
An absolute time delay generating device includes a PVT (process-voltage-temperature) detection device and a delay-timing generator. The PVT detection device includes at least a delay module and a signal phase/frequency control module. The delay module includes a control unit and a reference unit. The control unit differs from the reference unit in sensitivity of delay property to PVT. The delay module compares phase or frequency differences generated when origin signals pass through the control unit and reference unit respectively, and produce delay parameters of the delay module. The signal phase/frequency control module receives and compares the delay parameters to determine an ambient PVT condition for the absolute time delay generating device, so as to control and correct the delay-timing generator and thereby generate accurate absolute time delay. Under various PVT influences, the absolute time delay generating device is capable of generating accurate, absolute time signals.
Bit error rate tester and pseudo random bit sequences generator thereof
(2009-02-03)
Chen
;
Wei-Zen
;
Huang
;
Guan-Sheng
A bit error rate tester and a pseudo random bit sequences (PRBS) generator thereof are provided. The bit error rate tester includes a transmitter PRBS generator, a master PRBS generator, a slave PRBS generator, a comparator, and a counting unit. The transmitter PRBS generator generates a parallel N-bit (N is an integer larger than 1) original PRBS, wherein an object to be tested receives the original PRBS and outputs a parallel N-bit code to be tested. The master and the slave PRBS generators generate a master and a slave parallel N-bit PRBS, respectively. The comparator receives, compares, and determines whether the code to be tested, the master and the slave PRBS are the same or not, and outputs a comparison result. The counting unit coupling to the comparator counts a number of bit errors based on the comparison result.
Circuit and method for implementing frequency tripled I/Q signals
(2010-11-23)
Kuo
;
Chien-Nan
;
Chen
;
Huan-Sheng
A circuit and a method for implementing frequency tripled I/Q signals are proposed, including receiving two input I/Q signals through frequency multipliers so as to generate two frequency multiplied signals and mixing the input I/Q signals and the corresponding frequency multiplied signals through mixers for generating and outputting two I/Q signals with a frequency three times that of the input I/Q signals. The invention eliminates the requirement for high amplitude of the input signals as in the prior art and has lower power consumption and broader bandwidth and can be used as high frequency signal sources in any single chip processes.
Class-D driving method for stereo load
(2011-02-15)
Hu
;
Jwu-Sheng
;
Chen
;
Keng-Yuan
The present invention provides a class D amplifier and method for driving a tri-wired stereo amplifier. Additionally, the class D amplifier includes a first filter, a second filter, a processor, a 2D-quantitizer, a signal generator, and a logic circuit. The class D amplifier and method of the invention can reduce cost of production and increase processing efficiency. More particularly, the class D amplifier and method of the invention are processed in an optimal feedback mode, so as to reduce the reciprocal effect between the two channels, and avoid mismatch of the two amplifiers.
Copper metalized ohmic contact electrode of compound device
(2008-05-06)
Lee
;
Cheng-Shih
;
Chang
;
Edward Yi
;
Chen
The present invention provides an ohmic contact for a copper metallization whose heat diffusion is improved and cost is reduced. Therein, the ohmic contact is formed through a depositing and an annealing of three metal layers of Pd, Ge and Cu; and, the contact resistance of the ohmic contact is adjusted by the thicknesses of the three layers.
Dynamical sequentially-controlled low-power multiplexer device
(2011-02-01)
Huang
;
Juinn-Dar
;
Chen
;
Chia-I
Multiplexers are basic components widely used in VLSI designs. Switching activities of a multiplexer are one of the most important factors of power consumption. A multiplexer may have some sub-multiplexers. An extra dynamic controller is applied in the present invention to reconfigure control signals for decreasing switching activities of the composed sub-multiplexers. Thus, the power consumption of the multiplexer is reduced to achieve higher power efficiency.
Evanescent-field optical amplifiers and lasers
(2007-02-27)
Chen
;
Nan-Kuang
;
Chi
;
Sien
;
Tseng
An optical amplifier and a laser generator based on the fiber side-polished technology having a high pumping efficiency, a low noise figure and a small footprint are provided in this application. The optical amplifier and the laser, which have a very long effective interaction length in conjunction with highly doped Erbium glass attached to its surface and an addition of a slanted fiber grating inscribed in the guiding core at the polished region can spatially separate the signal and pump power to simultaneously improve the pumping efficiency and optimize the penetrated depth of the signal evanescent-field. The spontaneous emission is kept from being amplified and therefore a high quality amplified signal is produced.
Evanescent-field optical amplifiers and lasers
(2007-01-30)
Chen
;
Nan-Kuang
;
Chi
;
Sien
;
Tseng
An optical amplifier and a laser generator based on the fiber side-polished technology, having a high pumping efficiency, a low noise figure and a small footprint are provided in this application. The optical amplifier and the laser, which have a very long effective interaction length in conjunction with highly doped Erbium glass attached to its surface and an addition of a slanted fiber grating inscribed in the guiding core at the polished region can spatially separate the signal and pump power to simultaneously improve the pumping efficiency and optimize the penetrated depth of the signal evanescent-field. The spontaneous emission is kept from being amplified and therefore a high quality amplified signal is produced.
Ferroelectric thin film processing for ferroelectric field-effect transistor
(2005-02-08)
Chen
;
San-Yuan
;
Sun
;
Chia-Liang
;
Chin
The present invention relates to a method for manufacturing a ferroelectric field-effect transistor, particularly to a ferroelectric field-effect transistor with a metal/ferroelectric/insulator/semiconductor (MFIS) gate capacitor structure. The method comprises steps of depositing a bismuth layered ferroelectric film on the insulator buffered Si, after a high-temperature thermal treatment, depositing an upper electrode on the bismuth layered ferroelectric film.
Fiber-optic tunable filter and intensity modulater
(2006-04-04)
Chen
;
Nan-Kuang
;
Chi
;
Sien
;
Tseng
A fiber-optic tunable filter and an intensity modulator respectively includes: a fiber having a polished surface and an evanescent-field; and a photonic crystal having plural cavities and a filler filled therein and attached to the polished surface, wherein the plural cavities and the filler decide a photonic band-gap of the photonic crystal and the photonic band-gap is adjusted to reflect a light with a specific wavelength through the evanescent interaction with the photonic crystal material. Based on the fiber side-polishing technique, all kinds of fiber active and passive devices are able to be manufactured easily, especially for a high speed intensity modulator using an EO (Electro-Optic) polymer as the filler.
Green-emitting phosphors and process for producing the same
(2010-07-20)
Chen
;
Teng-Ming
;
Chiu
;
Yi-Chen
This invention relates to a green phosphor and a process for producing the same, wherein the phosphor is represented by a chemical formula: M(Tb1-xLax)4Si3O13, where M includes at least one of Ca and Sr, and 0
High-voltage tolerant power rail electrostatic discharge clamp circuit
(2007-10-16)
Ker
;
Ming-Dou
;
Chen
;
Wen-Yi
A high-voltage tolerant power-rail ESD clamp circuit is proposed, in which circuit devices can safely operate under the high power supply voltage that is three times larger than their process limitation without gate-oxide reliability issue. Moreover, an ESD detection circuit is used to effectively improve the whole ESD protection function by substrate-triggered technique. Because only low voltage (1*VDD) devices are used to achieve the object of high voltage (3*VDD) tolerance, the proposed design provides a cost effective power-rail ESD protection solution to chips with mixed-voltage interfaces.
Highly saturated red-emitting Mn(IV) activated phosphors and method of fabricating the same
(2010-12-07)
Chen
;
Teng-Ming
;
Luo
;
Juih-Tzer
The present invention provides a light emitting device comprising a semiconductor light source emitting radiation at about 250˜500 nm; and a phosphor composition radiationally coupled to the semiconductor light source, wherein the phosphor composition is selected from the group consisting of Mg14(Ge(5-a)Mna)O24, Sr(Ge(4-b)Mnb)O9, Mg2(Ti(1-c)Mnc)O4, Zn2(Ti(1-d)Mnd)O4, SrMg(Al(10-e)Mne)O17, and Y3(Ga(5-f)Mnf)O12.
Instruction pre-fetch amount control with reading amount register flag set based on pre-detection of conditional branch-select instruction
(2005-01-11)
Chen
;
Pao-Lung
;
Lee
;
Chen-Yi
An architecture of method for fetching microprocessor's instructions is provided to pre-fetch and pre-decode a next instruction. If the instruction pre-decoded is found a conditional branch instruction, an instruction reading-amount register is set for reading two instructions next to the current instruction in the program memory, or one is read instead if the next instruction is found an instruction other than the conditional branch one so as to waive reading of unnecessary program memory and thereby reduce power consumption.
Manufacturing method and apparatus of fiber coupler
(2006-02-07)
Chi
;
Sien
;
Tseng
;
Shiao-Min
;
Chen
A manufacturing apparatus and method of a fiber coupler is provided. A movable electric arc is employed to fuse more than two stacked fibers for manufacturing a fiber coupler having a small size and good environment stability. It is advantageous that the fiber coupler can be used in a SDH (Synchronous Digital Hierarchy) communication system, and the method also be used to manufacture the all-fiber CWDM (Coarse Wavelength Division Multiplexing) multiplexer which covers the E-band wavelengths and the sub-components of the OADM (Optical Add/Drop Multiplexer). And, all these functions are difficult to be achieved by the conventional techniques.
Metal oxide-assisted laser desorption/ionization mass spectrometry
(2006-10-17)
Chen
;
Yu-Chie
;
Chen
;
Cheng-Tai
;
Lin
The invention provides a simple, rapid and cost-effective metal oxide-assisted laser desorption/ionization mass spectrometry (MOALDI MS) without the addition of light-absorbing organic-matrix, comprising the use of (a) an inorganic metal oxide with light absorbing capability as an assisting material to render desorption/ionization of samples in laser desorption/ionization mass spectrometry and (b) a citric acid buffer as the proton source for enhancing the ionization efficiency for analytes. Metal oxide assisting materials is not only restricted to the uses of films. Metal oxide nanoparticles are also suitable to be used as the assisting materials. Low matrix background, stable surface feature, homogeneous sample deposition, and wide detectable mass range are the merits of MOALDI MS.
Method and computer program for constructing complex structure graphic
(2008-05-06)
Chen
;
Ming-Jang
A general complex structure graph constructing method and the associated computer program is described. The generators and initiators selected by the user are used as the geometrical graphing basis. Using the transformation information of the generators and the operation information between the generators and the initiators, the geometrical transformation and duplication of the objects are performed according to the definitions of duplication objects and connecting objects. This implements the geometrical graphing of complex structures. It is characterized in that: the operations are performed in a visualized way, including graphing operations (e.g., generation of objects), parameter transmissions (e.g., shifted duplications), and data generation (e.g., generation of a geometrical graph). Since the operations are simple and can be implemented on all computer executable platforms and is suitable for artistic designs, graphing, and teaching.
Method for automatic key posture information abstraction
(2009-11-10)
Liao
;
Hong-Yuan
;
Chen
;
Duan-Yu
The method for automatic key posture information abstraction of this invention comprises the steps of: Abstracting from a series of continuous digitized images spatial features of objects contained in said images; abstracting shape features of said objects using a method of probability calculation; detecting key posture information contained in said series of continuous images using a method of entropy calculation; removing redundant key postures; mating obtained key postures with key posture templates stored in a codebook; and encoding mated key postures.
Method for detection of manufacture defects
(2005-09-13)
Tseng
;
Shian-Shyong
;
Chen
;
Wei-Chou
;
Wang
A novel method for detection of manufacture defects is disclosed. The invented method is designed to discover root cause machine sets that cause defects in product manufactured in a process wherein a plurality of machines is involved. The method includes obtaining manufacture data that relate to manufacture of products in the manufacture process, generating a candidate list of machine set by analyzing the manufacture data wherein the machine set includes machines relative to defects in the products, and identifying root cause machine sets from the list of machine set wherein the root cause machine sets include machines highly related to the defects.
Method for fabrication of polycrystallin silicon thin film transistors
(2006-09-19)
Yeh
;
Ching-Fa
;
Chen
;
Tien-Fu
;
Lou
A method for fabricating polycrystalline silicon film transistors, which includes a polysilicon spacer capping onto a sidewall of an active layer in the thin film transistors by an isotropic dry etching of the silicon film. This method suppresses the shrinkage of the active layer during recrystallization by the laser. Large grains are formed in the channel after recrystallization utilizing a high-energy continuous wavelength laser or an excimer laser annealing the active layer. This process does not require an additional mask. Uniform arrangement of grain boundaries and large grain sizes promotes uniformity of performance of the device, which is important in the fields of low temperature polycrystalline silicon thin film transistors (LTPS-TFTs).