Browsing by Author "Chen, C. C."

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A parallel coupled-line filter using VLSI backend interconnect with high resistivity substrate
(2006-01-01)
Chen, C. C.
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Kao, H. L.
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Chiang, K. C.
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Chin, Albert
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電子工程學系及電子研究所
This paper reports our progress in developing parallel coupled-line filters based on Si-based VLSI backend interconnects for millimeter-wave applications. The resonant frequency of this coupled-line filter increases with increasing spacing-gap and with increasing IDM thickness. By using high resistivity substrate, the parallel coupled-line band-pass filter is extremely effective in reducing substrate loss, and also provides very low insertion loss, even at the millimeter-wave regime. In addition, the parallel coupled-line filter suitable for advanced system-on-a-chips at the millimeter wave application achieves high performance characteristics, which show low insertion loss, wide band, and compatibility with standard VLSI process.
A possibility of detection of the non-charge based analytes using ultra-thin body field-effect transistors
(2008-07-15)
Sheu, J. -T.
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Chen, C. C.
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Chang, K. S.
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Li, Y. -K.
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材料科學與工程學系奈米科技碩博班
Ultra-thin body of p-type field-effect transistors were developed as transducer for biosensors. Changes of conductance resulted from the changes of the surface potentials of ultra-thin body field-effect transistors (UTB-FETs) due to surface chemical modifications were demonstrated. The channel surface of UTB-FETs were modified with N-[3-(trimethoxysilyl)propyl]ethylenediamine (AEAPTMS) and then gold nanoparticles (AuNPs) to immobilize the bio-component, the genetically engineered Delta(5)-3-ketosteroid isomerase (Art_KSI) or the Art_KSI conjugated with charged reporter (Art_KSI_mA51). The binding of charge-based molecules or nanoparticles has been demonstrated to strongly affect the conductivity of UTB-FETs: the increase or decrease of the conductance depends on the polarity of the immobilized molecules or nanoparticles. A new protocol involving the detection of a non-charged analyte relied on the competitive binding of analyte (19-norandrostendione) and a charged reporter (mA51) with KSL When exposed to a 19-norandrostendione solution (10 mu M), the conductance of Art_KSI_mA51-modified UTB-FET increased by 265 nS (similar to 12%). On the other hand, conductance of Art_KSI_modified UTB-FET showed no distinct change under the same detection conditions. (c) 2008 Elsevier B.V. All rights reserved
A STUDY ON RFID AND AGENT BASED SERVICE PLATFORM
(2011)
Chen, Ruey-Shun
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Yeh, K-C
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Chen, C. C.
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Chen, Y. C.
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資訊管理與財務金融系註：原資管所+財金所
In order to prevent the monetary loss due to the information gap, we propose the "RFID and agent based service platform", which uses the agent as the framework to construct the integrated information system mechanism. We also use the radio frequency identification technology to realize the intelligent shelf for the retrieval of commodity message. At the same time, we develop the interactive information platform to provide the consultation and promotion service of goods. The framework will help enhance the performance of the sales outlets and improve the customer service, while addressing the time effect issue of the popular commodity.
Almost disturbance decoupling control of nonlinear MIMO uncertain system and application to half-car active suspension system
(2008)
Chien, T. L.
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Chen, C. C.
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Chiu, H. C.
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Cheng, H. W.
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Chen, Ying-Chen
This paper studies the tracking and almost disturbance decoupling problem of nonlinear multi-input multi-output uncertain systems based on the feedback linearisation approach. The main contribution of this study is to construct a controller, under appropriate conditions, such that the resulting closed-loop system is valid for any initial condition and bounded tracking signal with the following characteristics: input-to-state stability with respect to disturbance inputs and almost disturbance decoupling, i.e., the influence of disturbances on the L(2) norm of the output tracking error can be arbitrarily attenuated by changing some adjustable parameters. One example, which cannot be solved by the first paper on the almost disturbance decoupling problem, is proposed in this paper to exploit the fact that the tracking and the almost disturbance decoupling performances are easily achieved by the proposed approach. In order to demonstrate the practical applicability, the paper has investigated a famous half-car active suspension system.
Broad Angular and Spectral Anti-Reflection Employing GaN Nano-Pillar Structures
(2008)
Chiu, C. H.
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Yu, Peichen
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Chen, C. C.
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Kuo, H. C.
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Lu, T. C.
Angular and spectral reflectivities of GaN nano-pillar structures are investigated for heights of 350nm, 550nm and 720 nm. Calculations based on rigorous coupled-wave analysis show excellent agreement with the measured reflectivities for s- and p-polarizations. (c) 2008 Optical Society of America
Broadband and omnidirectional antireflection employing disordered GaN nanopillars
(2008-06-09)
Chiu, C. H.
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Yu, Peichen
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Kuo, H. C.
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Chen, C. C.
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Lu, T. C.
Disordered GaN nanopillars of three different heights: 300, 550, and 720 nm are fabricated, and demonstrate broad angular and spectral anti-reflective characteristics, up to an incident angle of 60 degrees and for the wavelength range lambda=300-1800nm. An algorithm based on a rigorous coupled-wave analysis (RCWA) method is developed to investigate the correlations between the reflective characteristics and the structural properties of the nanopillars. The broadband and omnidirectional antireflection arises mainly from the refractive-index gradient provided by nanopillars. Calculations show excellent agreement with the measured reflectivities for both s- and p-polarizations. (c) 2008 Optical Society of America.
Correlated Electric Fluctuations in GaN Nanowire Devices
(2009-02-01)
Li, L. C.
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Huang, S. Y.
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Wei, J. A.
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Suen, Y. W.
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Lee, M. W.
We report an experimental study on the correlation spectrums between different sections of a multicontact GaN nanowire device. Our results indicate that there exists a negative correlation between the voltage fluctuations of adjacent sections of the nanowire separated by a metal contact in the transition region between the low-frequency 1/f noise and the high-frequency white thermal noise. We suggest that this correlation is caused by the voltage fluctuation under the contact area.
Design and fabrication of a microplatform for the proximity effect study of localized ELF-EMF on the growth of in vitro HeLa and PC-12 cells
(2010-12-01)
Chen, Y. C.
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Chen, C. C.
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Tu, W.
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Cheng, Y. T.
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Tseng, F. G.
This paper presents a platform technology with experimental results that show the scientists and biologists a way to rapidly investigate and analyze the biological effects of localized extremely low frequency (ELF) electromagnetic field (EMF) on living cells. The proximity effect of the localized ELF-EMF on living cells is revealed using the bio-compatible microplatform on which an on-glass inductive coil array, the source of the localized ELF-EMF in micro scale, is designed, fabricated and operated with a field strength of 1.2 +/- 0.1 mT at 60 Hz for cell culturing study. After a 72 h ELF-EMF exposure, HeLa (human cervical cancer) and PC-12 (rat pheochromocytoma) cells exhibit about 18.4% and 12.9% cell proliferation rate reduction, respectively. Furthermore, according to the presented dynamic model, the reduction of the proliferation can be attributed to the interference of signal transduction processes due to the tangential currents induced around the cells.
Design and fabrication of a microplatform for the proximity effect study of localized ELF-EMF on the growth of in vitro HeLa and PC-12 cells
(2010-12-01)
Chen, Y. C.
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Chen, C. C.
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Tu, W.
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Cheng, Y. T.
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Tseng, F. G.
This paper presents a platform technology with experimental results that show the scientists and biologists a way to rapidly investigate and analyze the biological effects of localized extremely low frequency (ELF) electromagnetic field (EMF) on living cells. The proximity effect of the localized ELF-EMF on living cells is revealed using the bio-compatible microplatform on which an on-glass inductive coil array, the source of the localized ELF-EMF in micro scale, is designed, fabricated and operated with a field strength of 1.2 +/- 0.1 mT at 60 Hz for cell culturing study. After a 72 h ELF-EMF exposure, HeLa (human cervical cancer) and PC-12 (rat pheochromocytoma) cells exhibit about 18.4% and 12.9% cell proliferation rate reduction, respectively. Furthermore, according to the presented dynamic model, the reduction of the proliferation can be attributed to the interference of signal transduction processes due to the tangential currents induced around the cells.
Effects of electromigration on grain rotation behavior of SnAg solders
(2009)
Lin, Han-wen
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Chen, Chih
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Kuo, J. C.
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Chen, C. C.
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材料科學與工程學系
The requirement for smaller devices but with much greater performance leads to a boost in current density and damage caused by electromigration. Recently, some researches show that the grain orientation changes during current stressing. In this study, the solder of SnAg2.6 with 2um-thick UBM layer of Ni and 20um-thick copper pad is used. Electron Backscattered Diffraction (EBSD) is applied to investigate the grain orientation in the entire solder joint during electromigration. Semi-In-situ observations are to determine the rate of change on grain orientation of tin. We can analysis these data at the same time to understand the relationship between the rotation rate of tin grain orientations and the current density applied on it. The analysis for current density in solders is accomplished by finite element simulation result. So far, based on our preliminary result, there are obvious grain rotations when they are subjected to current stressing and detailed results will be presented in the conference.
Electric stress effect on DC-RF performance degradation of 0.18-mu m mosfets
(2006-10-01)
Chen, C. C.
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Kao, H. L.
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Chin, Albert
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電子工程學系及電子研究所
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Department of Electronics Engineering and Institute of Electronics
We have studied the electric stress effect on DC-RF performance degradation of 64 gate fingers 0.18-mu m RF MOSFETs. The fresh devices show good transistor's DC to RF characteristics of small sub-threshold swing of 85 mV/dec, large drive current (I-d,I-sat) of 500 mu A/mu m, high unity-gain cut-off frequency (f(t)) of 47 GHz, and low minimum not. se figure (NFmin) of 1.3 dB at 10 GHz. The hot carrier stress for 20% I-d,I-sat reduction causes DC g(m) and r(o) degradation as well as the lower RF current gain by 2.35 dB, f(t) reduction to 35.7 GHz, increasing NFmin to 1.7 dB at 10 GHz and poor output impedance matching. (C) 2006 Wiley Periodicals, Inc.
Electrochemically Synthesized Nanocomposites for MEMS Device Performance Enhancement
(2018-01-01)
Chen, C. C.
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Cheng, Y. T.
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電子工程學系及電子研究所
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Department of Electronics Engineering and Institute of Electronics
In this paper, a performance enhancement scheme of MEMS devices is presented based on the implementation of electrochemically synthesized nanocomposites including Ni-diamonds, Ni-CNTs, NiFe-AAO CoNiMnP AAO etc.. Via the incorporation of nano-sized materials, the matrix material as a part of devices structure can exhibit distinct physical characteristics resulting from composite and shape effects for better device performance. Owing to the process advantages of low temperature and high compatibility with wafer-level CMOS process, the cost-effective electrochemical process technology has shown its potential for various MEMS applications.
Exploring the origin of the directional emission from a microcavity with a large-aperture surface-emitting laser
(2009-06-15)
Chen, Ross C. C.
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Yu, Y. T.
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Huang, Y. J.
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Chen, C. C.
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Chen, Y. F.
The origin of the direction emission from a microcavity is investigated with a large-aperture surface-emitting laser with an equilateral-triangular shape. Experimental results reveal that a wide-spread eigen-mode and a localized superscar mode can display quite similar far-field directional emissions. This experimental finding is theoretically confirmed with the quantum-billiard wave function and the approximation of the paraxial propagation. (C) 2009 Optical Society of America
Fabrication of High Electrical Performance NILC-TFTs Using FSG Buffer Layer
(2010)
Chen, C. C.
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Wu, Y. C.
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Tung, T. F.
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Wu, H. Y.
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材料科學與工程學系
Fluorinated-silicate-glass (FSG) was combined with Ni-metal-induced lateral crystallization (NILC) polycrystalline silicon thin-film transistors (poly-Si TFTs). It was found that the electrical performances were improved because the trap-state density was decreased by fluorine-ion passivation. Moreover, FSG-NILC-TFTs possess high immunity against the hot-carrier stress and, thereby, exhibit better reliability.
FLASH-TW experiment status report
(2005)
Liu, T. C.
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Chang, F. Y.
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Chen, C. C.
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Chen, C. W.
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Huang, M. A.
FLASH-TW is an experiment to measure the shower lateral and longitudinal profiles. We perform the shower profile measurement by shooting the 1.5 GeV electron beams in NSRRC on targets made of 15 aluminum blocks, each with a thickness of 2.9 cm. A scintillator (Al2O3: Cr)) is placed behind the targets, converting the secondary shower particles into light. The light from the central region of the shower is recorded by a CCD camera while the light from the outer region is monitored by PMTs. The CCD system is successfully implemented in the run 2 and run 3 of experiment FLASH at SLAC. A test run of the current experiment has been conducted in NSRRC in the past June to study the scintillator spectrum. Two more runs are planned from now to the year 2006 to measure the shower lateral and longitudinal profiles.
Formation, Rolling, and Agglomeration of a Co Seed Droplet in Patterned Inverted Silicon Nano-Pyramid
(2009)
Chen, C. C.
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Hsu, Lun-Hao
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Cheng, Y. T.
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電子工程學系及電子研究所
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Department of Electronics Engineering and Institute of Electronics
The paper presents upper and lower limitations of nominal radius of liquid drops for rolling along an inclination by considering specified dimensionless Bond number, gravitational force, and Gibbs free energy. The relations between the Bond number and Gibbs free energy are established in this paper to determine the region of nominal radius of seeding droplets and the conditions of rolling mechanism. Experimental results show nanometer sized Co seeds formed on a patterned nonwettable silicon inverted pyramid {111} surface under the specified conditions will roll down and then aggregate in the bottom of the inverted pyramid to form a singular seed, which is applicable for 1-D material growth control.
Generation of two-dimensional chaotic vector fields from a surface-emitting semiconductor laser: Analysis of vector singularities
(2007-08-01)
Chen, C. C.
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Su, K. W.
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Lu, T. H.
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Liu, C. C.
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Chen, Y. F.
We demonstrate experimental generation of two-dimensional (2D) chaotic vector fields from a surface-emitting microcavity laser with precisely control of the operating temperature and the operating current. The 2D optical vector field is found to be formed by frequency locking of two linearly polarized laser modes with different chaotic spatial structures. The eigenfunction expansion method is used to reconstruct the experimental wave function for analyzing the properties of the vector singularities. It is shown that the distribution of vector singularities obeys the sign rule of nearest-neighbor singularities in the phase space of the vector field.
Gravity-Assisted Seeding Control for 1-D Material Growth
(2009-07-01)
Chen, C. C.
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Hsu, Lun-Hao
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Rern, Kai
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Cheng, Y. T.
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Hsieh, Yi-Fan
This letter presents a seeding control scheme by utilizing gravity force to form an agglomeration of molten Co seeds on a patterned inverted silicon nanopyramid. Nanometer sized molten Co seeds formed on a nonwettable inverted pyramid surface can roll along the inclination followed by aggregation to form a singular seed with the size depending on the pyramid size and the thickness of as-deposited Co film inside the pyramid. The proposed scheme allowing the formation of well-aligned catalytic seeds with manipulated size will promise the control growth of 1-D material for practical integrated microelectronic device fabrication.
Heat transfer correlations of forced convective boiling for pure refrigerants in micro-fin tubes
(2011-04-01)
Chiou, C. B.
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Lu, D. C.
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Chen, C. C.
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Chu, C. M.
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機械工程學系
The evaporation heat transfer coefficient of pure refrigerants R-22 and R-124 in micro-fin tubes were measured at the reduced pressure of 0.15, the mass flux from 100 to 400 kg/m(2) s, the flow quality from 0.1 to 0.9, and the heat flux from 5 to 20 kW/m(2). The evaporation heat transfer coefficient of pure refrigerant in micro-fin tube is 1.5-3.0 times higher than that of smooth tube. In this article, the single phase forced convection heat transfer coefficient of micro-fin tube is introduced to predict the evaporation heat transfer coefficient of pure refrigerant in micro-fin tubes. The present correlations provide reasonable agreement with the experimental data. The prediction values mostly fall within +/- 30%. (C) 2010 Elsevier Ltd. All rights reserved.
High performance band-pass filter embedded into SoCs using VLSI backend interconnects and high resistivity silicon substrate
(2006)
Chen, C. C.
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Chin, Albert
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Yang, M. T.
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Liu, Sally
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電子工程學系及電子研究所
High performance band-pass filters are demonstrated on VLSI incorporating interconnects and high resistivity substrate. The resonating frequency of this coupled-line filter increases not only with the increasing spacing-gap but also with increasing IDM thickness. This band-pass filter, low insertion loss and wide bandwidth characteristics, are suitable for the advanced wireless system. The established equivalent circuit model for this band-pass filter corresponds with the measured results and provides effectively RIF passive components embedded into system-on-a-chips.