High performance band-pass filter embedded into SoCs using VLSI backend interconnects and high resistivity silicon substrate

Abstract

High performance band-pass filters are demonstrated on VLSI incorporating interconnects and high resistivity substrate. The resonating frequency of this coupled-line filter increases not only with the increasing spacing-gap but also with increasing IDM thickness. This band-pass filter, low insertion loss and wide bandwidth characteristics, are suitable for the advanced wireless system. The established equivalent circuit model for this band-pass filter corresponds with the measured results and provides effectively RIF passive components embedded into system-on-a-chips.