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High performance band-pass filter embedded into SoCs using VLSI backend interconnects and high resistivity silicon substrate

dc.citation.epage29en_US
dc.citation.spage27en_US
dc.contributor.authorChen, C. C.en_US
dc.contributor.authorChin, Alberten_US
dc.contributor.authorYang, M. T.en_US
dc.contributor.authorLiu, Sallyen_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.date.accessioned2014-12-08T15:24:43Z
dc.date.available2014-12-08T15:24:43Z
dc.date.issued2006en_US
dc.description.abstractHigh performance band-pass filters are demonstrated on VLSI incorporating interconnects and high resistivity substrate. The resonating frequency of this coupled-line filter increases not only with the increasing spacing-gap but also with increasing IDM thickness. This band-pass filter, low insertion loss and wide bandwidth characteristics, are suitable for the advanced wireless system. The established equivalent circuit model for this band-pass filter corresponds with the measured results and provides effectively RIF passive components embedded into system-on-a-chips.en_US
dc.identifier.doi10.1145/1178782.1178788en_US
dc.identifier.isbn1-4244-0103-8en_US
dc.identifier.journalProceedings of the IEEE 2006 International Interconnect Technology Conferenceen_US
dc.identifier.urihttp://dx.doi.org/10.1145/1178782.1178788en_US
dc.identifier.urihttps://ir.lib.nycu.edu.tw/handle/11536/17159
dc.identifier.wosnumberWOS:000238974400008
dc.language.isoen_USen_US
dc.titleHigh performance band-pass filter embedded into SoCs using VLSI backend interconnects and high resistivity silicon substrateen_US
dc.typeProceedings Paperen_US

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