Browsing by Author "Chiang, K. C."

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A parallel coupled-line filter using VLSI backend interconnect with high resistivity substrate
(2006-01-01)
Chen, C. C.
;
Kao, H. L.
;
Chiang, K. C.
;
Chin, Albert
;
電子工程學系及電子研究所
This paper reports our progress in developing parallel coupled-line filters based on Si-based VLSI backend interconnects for millimeter-wave applications. The resonant frequency of this coupled-line filter increases with increasing spacing-gap and with increasing IDM thickness. By using high resistivity substrate, the parallel coupled-line band-pass filter is extremely effective in reducing substrate loss, and also provides very low insertion loss, even at the millimeter-wave regime. In addition, the parallel coupled-line filter suitable for advanced system-on-a-chips at the millimeter wave application achieves high performance characteristics, which show low insertion loss, wide band, and compatibility with standard VLSI process.
A Study on Frequency-Dependent Voltage Nonlinearity of SrTiO(3) rf Capacitor
(2010-01-01)
Cheng, C. H.
;
Huang, C. C.
;
Hsu, H. H.
;
Chen, P. C.
;
Chiang, K. C.
In this article, we investigate the frequency-dependent voltage nonlinearity effect of high-kappa Ni/SrTiO(3)/TaN and TaN/SrTiO(3)/TaN radio-frequency (rf) metal-insulator-metal (MIM) capacitors by electrical and thermal stresses. The experimental results demonstrated that the MIM-related capacitance properties, dependence of voltage and frequency, are not only affected by intrinsic dielectric properties but also shared by extrinsic effect, which possibly originated from the oxygen vacancies or electrode polarization. The high work-function Ni electrode can prevent the frequency-dependent voltage coefficient of capacitance characteristics from deterioration under the high temperature or continued voltage-stressing environments. (C) 2010 The Electrochemical Society. [DOI: 10.1149/1.3491490] All rights reserved.
A Study on Frequency-Dependent Voltage Nonlinearity of SrTiO3 rf Capacitor
(2010-01-01)
Cheng, C. H.
;
Huang, C. C.
;
Hsu, H. H.
;
Chen, P. C.
;
Chiang, K. C.
In this article, we investigate the frequency-dependent voltage nonlinearity effect of high-kappa Ni/SrTiO3/TaN and TaN/SrTiO3/TaN radio-frequency (rf) metal-insulator-metal (MIM) capacitors by electrical and thermal stresses. The experimental results demonstrated that the MIM-related capacitance properties, dependence of voltage and frequency, are not only affected by intrinsic dielectric properties but also shared by extrinsic effect, which possibly originated from the oxygen vacancies or electrode polarization. The high work-function Ni electrode can prevent the frequency-dependent voltage coefficient of capacitance characteristics from deterioration under the high temperature or continued voltage-stressing environments. (C) 2010 The Electrochemical Society. [DOI: 10.1149/1.3491490] All rights reserved.
High-Density and Low-Leakage-Current MIM Capacitor Using Stacked TiO(2)/ZrO(2) Insulators
(2009-07-01)
Lin, S. H.
;
Chiang, K. C.
;
Chin, Albert
;
Yeh, F. S.
;
電子工程學系及電子研究所
We have fabricated high-kappa Ni/TiO(2)/ZrO(2)/TiN metal-insulator-metal (MIM) capacitors. A low leakage current of 8 x 10(-8) A/cm(2) at 125 degrees C was obtained with a high 38-fF/mu m(2) capacitance density and better than the ZrO(2) MIM capacitors. The excellent device performance is due to the lower electric field in 9.5-nm-thick TiO(2)/ZrO(2) devices to decrease the leakage current and to a higher kappa value of 58 for TiO(2) as compared with that of ZrO(2) to preserve the high capacitance density.
High-Density and Low-Leakage-Current MIM Capacitor Using Stacked TiO2/ZrO2 Insulators
(2009-07-01)
Lin, S. H.
;
Chiang, K. C.
;
Chin, Albert
;
Yeh, F. S.
;
電子工程學系及電子研究所
We have fabricated high-kappa Ni/TiO2/ZrO2/TiN metal-insulator-metal (MIM) capacitors. A low leakage current of 8 x 10(-8) A/cm(2) at 125 degrees C was obtained with a high 38-fF/mu m(2) capacitance density and better than the ZrO2 MIM capacitors. The excellent device performance is due to the lower electric field in 9.5-nm-thick TiO2/ZrO2 devices to decrease the leakage current and to a higher kappa value of 58 for TiO2 as compared with that of ZrO2 to preserve the high capacitance density.
High-performance SrTiO3 MIM capacitors for analog applications
(2006-09-01)
Chiang, K. C.
;
Huang, Ching-Chien
;
Chen, G. L.
;
Chen, Wen Jauh
;
Kao, H. L.
TAN/SrTiO3/TaN capacitors with a capacitance density of 28-35 fF/mu m(2) have been developed by using a high-kappa (kappa = 147-169) SrTiO3 dielectric containing nanometersized microcrystals (3-10 nm). A small capacitance effective thickness was achieved by reducing the interfacial TaON using N+ treatment on the lower TaN electrode during post-deposition annealing. The small (92 ppm/V-2) voltage coefficient of the capacitance and the 3 x 10(-8) A/cm(2) leakage current at 2 V exceed the International Technology Roadmap for Semiconductors' requirements for analog capacitors at year 2018.
High-temperature leakage improvement in metal-insulator-metal capacitors by work-function tuning
(2007-03-01)
Chiang, K. C.
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Cheng, C. H.
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Pan, H. C.
;
Hsiao, N.
;
Chou, C. P.
Using low-cost and high work-function Ni, a low leakage current of 5 x 10(-6) A/cm(2) at 125 degrees C is obtained in a high 25-fF/mu m(2)-density SrTiO3 metal-insulator-metal (MIM) capacitor processed at 400 degrees C. This is approximately two orders of magnitude better than the same device using a TaN electrode, with added advantages of improved voltage and temperature coefficients of capacitance. This work-function tuning method also has merit for achieving both low thermal leakage and high overall k value beyond previous laminate structure.
Improved Capacitance Density and Reliability of High-k Ni/ZrO(2)/TiN MIM Capacitors Using Laser-Annealing Technique
(2010-07-01)
Tsai, C. Y.
;
Chiang, K. C.
;
Lin, S. H.
;
Hsu, K. C.
;
Chi, C. C.
We have fabricated high-k Ni/ZrO(2)/TiN metal-insulator-metal capacitors with a very high 52-fF/mu m(2) capacitance density, a low leakage current of 1.6 x 10(-7) A/cm(2), and good ten-year reliability with a small Delta C/C of 1.7% at 2 V. From X-ray diffraction measurements, laser annealing can improve the permittivity of ZrO(2) due to tetragonal-phase formation which in turn helps enhance capacitance density and reliability. Such excellent device integrity is attributed to the combination of enhanced ZrO(2) tetragonal phase by laser annealing, high work-function Ni electrode, and good bottom-interface treatment.
Improved Capacitance Density and Reliability of High-k Ni/ZrO2/TiN MIM Capacitors Using Laser-Annealing Technique
(2010-07-01)
Tsai, C. Y.
;
Chiang, K. C.
;
Lin, S. H.
;
Hsu, K. C.
;
Chi, C. C.
We have fabricated high-k Ni/ZrO2/TiN metal-insulator-metal capacitors with a very high 52-fF/mu m(2) capacitance density, a low leakage current of 1.6 x 10(-7) A/cm(2), and good ten-year reliability with a small Delta C/C of 1.7% at 2 V. From X-ray diffraction measurements, laser annealing can improve the permittivity of ZrO2 due to tetragonal-phase formation which in turn helps enhance capacitance density and reliability. Such excellent device integrity is attributed to the combination of enhanced ZrO2 tetragonal phase by laser annealing, high work-function Ni electrode, and good bottom-interface treatment.
Improved Stress Reliability of Analog Metal-Insulator-Metal Capacitors Using TiO(2)/ZrO(2) Dielectrics
(2009-12-01)
Lin, S. H.
;
Chiang, K. C.
;
Yeh, F. S.
;
Chin, Albert
;
電子工程學系及電子研究所
We have studied the stress reliability of high-k Ni/TiO(2)/ZrO(2)/TiN metal-insulator-metal capacitors under constant-voltage stress. The increasing TiO(2) thickness on ZrO(2) improves the 125-degrees C leakage current, capacitance variation (Delta C/C), and long-term reliability. For a high density of 26 fF/mu m(2), good extrapolated ten-year reliability of small Delta C/C similar to 0.71% is obtained for the Ni/10-nm-TiO(2)/6-5-nm-ZrO(2)/TiN device at 2.5-V operation.
Improved Stress Reliability of Analog Metal-Insulator-Metal Capacitors Using TiO2/ZrO2 Dielectrics
(2009-12-01)
Lin, S. H.
;
Chiang, K. C.
;
Yeh, F. S.
;
Chin, Albert
;
電子工程學系及電子研究所
We have studied the stress reliability of high-k Ni/TiO2/ZrO2/TiN metal-insulator-metal capacitors under constant-voltage stress. The increasing TiO2 thickness on ZrO2 improves the 125-degrees C leakage current, capacitance variation (Delta C/C), and long-term reliability. For a high density of 26 fF/mu m(2), good extrapolated ten-year reliability of small Delta C/C similar to 0.71% is obtained for the Ni/10-nm-TiO2/6-5-nm-ZrO2/TiN device at 2.5-V operation.
RFIC TaN/SrTio(3)/TaN MIM capacitors with 35 fF/mu m(2) capacitance density
(2006-09-01)
Huang, C. C.
;
Chiang, K. C.
;
Kao, H. L.
;
Chin, Albert
;
Chen, W. J.
A very high density of 35 fF/mu m(2) is measured in a radio frequency (RF) metal-insulator-metal (MIM) capacitor using high-kappa (kappa = 169) SrTiO3 fabricated by very large scale integration (VLSI) back-end integration. A very small capacitance reduction of 4.1% from 100 kHz to 10 GHz, low leakage current of 1 X 10(-7) A/cm(2) at 1 V are simultaneously measured. The small voltage dependence of a capacitance Delta C/C of 637 ppm is also obtained at 2 GHz, which ensures this MIM capacitor useful for high precision circuits operated at a RF regime.
Thermal leakage improvement by using a high-work-function ni electrode in high-kappa TiHfO metal-insulator-metal capacitors
(2007)
Chiang, K. C.
;
Huang, C. C.
;
Pan, H. C.
;
Hsiao, C. N.
;
Lin, J. W.
An unavoidable drawback when using high-kappa dielectrics in capacitors is the small bandgap and the related reduction in the band-offset, which results in a large leakage current at elevated temperatures. We report improvements in the thermal leakage current by using Ni as a high-work-function top electrode for high-kappa TiHfO capacitors. This avoids sacrificing the overall kappa value by using a multilayer or laminate structure and results in better voltage linearity, which is important for analog/radio frequency integrated circuits. (c) 2007 The Electrochemical Society.
Use of a high-work-function ni electrode to improve the stress reliability of Analog SrTiO3 metal-insulator-metal capacitors
(2007-08-01)
Chiang, K. C.
;
Cheng, C. H.
;
Jhou, K. Y.
;
Pan, H. C.
;
Hsiao, C. N.
We have studied the stress reliability of low-energy-bandgap high-kappa. SrTiO3 metal-insulator-metal capacitors under constant voltage stress. By using a high-work-function Ni electrode (5.1 eV), we reduced the degrading effects of stress on the capacitance variation (Delta C/C), the quadratic voltage coefficient of capacitance (VCC-alpha), and the long-term reliability, in contrast with using a TaN. The improved stress reliability for the Ni electrode capacitors is attributed to a reduction of carrier injection and trapping.
Very high density (44 fF/mu m(2)) SrTiO3 MIM capacitors for RF applications
(2007)
Chiang, K. C.
;
Lin, J. W.
;
Pan, H. C.
;
Hsiao, C. N.
;
Chen, W. J.
We demonstrate a high-performance TaN/SrTiO3/TaN metal-insulator- metal (MIM) radio-frequency (rf) capacitor with good device integrity of very high capacitance density of 44 fF/mu m(2), small voltage linearity alpha of 54 ppm/V-2 at 2 GHz, and a small capacitance reduction 3.5% from 100 KHz to 10 GHz. Such large capacitance density can largely reduce the device size used in rf integrated circuits. (c) 2007 The Electrochemical Society.