Browsing by Author "Chou, Kun-I"

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A Low Operating Voltage IGZO TFT Using LaLuO3 Gate Dielectric
(2013)
Chou, Kun-I
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Hsu, Hsiao-Hsuan
;
Cheng, Chun-Hu
;
Lee, Kai-Yu
;
Li, Shang-Rong
This study proposes a low operation voltage indium-gallium-zinc oxide (IGZO) thin-film transistor using a high-kappa lanthanum-lutetium oxide as the gate dielectric. It is the first time to integrate the high-kappa LaLuO3 into an IGZO TFT. The resulting LaLuO3/IGZO TFT shows a low threshold voltage of 0.32 V, a small sub-threshold swing of 310 mV/decade and an acceptable mobility (mu(FE)) of 6.6 cm(2)/V-s. The low V-T and small SS allow device operation voltage below 2.5 V.
Current Uniformity Improvement in Flexible Resistive Memory
(2013)
Zheng, Zhi-Wei
;
Cheng, Chun-Hu
;
Chou, Kun-I
;
Liu, Ming
;
Chin, Albert
High uniform current distribution, good endurance, and low 28 mu W switching power are successfully achieved in Ni/GeOx/TiOy/TaN resistive random access memory devices on flexible polyimide substrate. The good performances are attributed to the nitrogen-rich TaN to increase the oxidation resistance and decrease the TaON and oxygen vacancies formation from x-ray photoelectron spectroscopy measurements, where such oxygen vacancies are related to current conduction at high resistance state. The present results demonstrate that the device with nitrogen-rich TaN electrode has a strong potential for future low-cost high-performance flexible memory application.
GeO2/PZT Resistive Random Access Memory Devices With Ni electrode
(2013)
Chou, Kun-I
;
Cheng, Chun-Hu
;
Chin, Albert
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電子工程學系及電子研究所
;
Department of Electronics Engineering and Institute of Electronics
We report a resistive random-access memory (RRAM) using stacked GeO2 and PZT. Under unipolar mode operation, the Ni/GeO2/PZT/TaN RRAM shows a good DC cycling of 2x10(3) cycles, 85 degrees C retention, and large resistance window about 120x, which is better than that shown by the single-layer Ni/PZT/TaN RRAM without the covalent-bond-dielectric GeO2.
Improved current distribution in resistive memory on flexible substrate using nitrogen-rich TaN electrode
(2012-12-10)
Zheng, Zhi-Wei
;
Cheng, Chun-Hu
;
Chou, Kun-I
;
Liu, Ming
;
Chin, Albert
Narrow current distribution, good endurance, and low 28 mu W switching power are successfully achieved in Ni/GeOx/TiOy/TaN resistive random access memory devices. The good distribution and endurance are attributed to the nitrogen-rich TaN to increase the oxidation resistance and decrease the TaON and oxygen vacancies formation from x-ray photoelectron spectroscopy measurements, where such oxygen vacancies are related to current conduction at high resistance state. In addition, the devices on the flexible polyimide substrate exhibit excellent mechanical endurance upon repeated bending tests, showing their high potential for low-cost flexible memory application. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4772003]
Performance comparison of titanium-oxide resistive switching memories using GeOx and AlOx capping layers for flexible application
(2014-06-01)
Chou, Kun-I
;
Cheng, Chun-Hu
;
Chin, Albert
;
電子工程學系及電子研究所
;
Department of Electronics Engineering and Institute of Electronics
To meet the requirements of flexible memory applications, we have compared two capping layers of GeOx and AlOx on a TiOy resistive random access memory (RRAM) at room temperature. A Ni/GeOx/TiOy/TaN RRAM shows a large resistance window of >10(2), 85 degrees C retention, a high-resistance-state (HRS) activation energy (E-a) of 0.52 eV, and a good DC cycling of 10(3) cycles, which are significantly better than those of a Ni/AlOx/TiOy/TaN RRAM, which has a high-defect-density dielectric of AlOx. (C) 2014 The Japan Society of Applied Physics
TiO2-Based Indium Phosphide Metal-Oxide-Semiconductor Capacitor with High Capacitance Density
(2015-04-01)
Cheng, Chun-Hu
;
Hsu, Hsiao-Hsuan
;
Chou, Kun-I
;
電子工程學系及電子研究所
;
Department of Electronics Engineering and Institute of Electronics
We report a low-temperature InP p-MOS with a high capacitance density of 2.7 mu F/cm(2), low leakage current of 0.77 A/cm(2) at 1 V and tight current distribution. The high-density and low-leakage InP MOS was achieved by using high-kappa TiLaO dielectric and ultra-thin SiO2 buffer layer with a thickness of less than 0.5 nm. The obtained EOT can be aggressively scaled down to <1 nm through the use of stacked TiLaO/SiO2 dielectric, which has the potential for the future application of high mobility III-V CMOS devices.
Unipolar Ni/GeOx/PbZr0.5Ti0.5O3/TaN Resistive Switching Memory
(2011-12-01)
Chou, Kun-I
;
Cheng, Chun-Hu
;
Chen, Po-Chun
;
Yeh, Fon-Shan
;
Chin, Albert
In this study we propose a resistive random-access memory (RRAM) using stacked GeOx and PbZr0.5Ti0.5O3 (PZT). Under unipolar-mode operation, the bilayers Ni/GeOx/PZT/TaN RRAM shows a large resistance window of >10(2), for 85 degrees C retention, and a good DC cycling of 2000 cycles, which are significantly better than those shown by the single-layer Ni/PZT/TaN RRAM without the covalent-bond-dielectric GeOx. (C) 2011 The Japan Society of Applied Physics